Isolation assembly, upper electrode device and semiconductor processing equipment

Abstract

The invention provides an isolation assembly, an upper electrode device and semiconductor processing equipment. The isolation assembly is used for electrically insulating a first electrode piece and a second electrode piece in the semiconductor processing equipment, the isolation assembly comprises an isolation main body, a gas channel used for transmitting clean gas is arranged in the isolation main body, the gas channel is provided with at least one gas outlet, and the at least one gas outlet is located on at least one specified surface of the isolation main body. The cleaning device is used for blowing or removing attachments on a specified surface, so that the attachments formed on the specified surface by plasmas are reduced by using the cleaning gas, and the problem of particles caused by the attachments on the surface of the isolation main body is solved.

Description

Technical Field

[0001] The embodiments of the present disclosure relate to, but are not limited to, the field of semiconductors, and in particular, to an isolation component, an upper electrode device, and semiconductor processing equipment. Background Art

[0002] Before the silicon epitaxial growth process, to ensure quality, the wafer surface must be pre-cleaned to remove silicon oxide, a deposit on the wafer surface. Currently, pre-cleaning of silicon oxide is primarily accomplished through plasma etching. For example, an upper electrode device can be used to ionize reactive gases such as NF3 and NH3 to generate F ions for silicon oxide etching. These F ions then react with the silicon oxide on the wafer surface, removing the silicon oxide.

[0003] The upper electrode device currently used includes the form of a flat plate capacitor. In this structure, the positive plate and the negative plate are separated by an isolation sleeve.

[0004] However, due to the prolonged exposure of the isolation sleeve to plasma bombardment and the accumulation of reaction byproducts, deposits easily accumulate on its outer surface. These deposits cause the outer surface of the isolation sleeve to turn black, and the accumulated black byproducts easily flake off to form particles, which contaminate the reaction chamber and cause excessive particle levels. Summary of the Invention

[0005] The present invention aims to solve at least one of the technical problems existing in the prior art, and proposes an isolation component, an upper electrode device and a semiconductor processing equipment. The gas channel of the isolation component can provide clean gas to the designated surface on the isolation body, thereby reducing the attachments formed by the plasma on the designated surface, and solving the particle problem caused by the attachments accumulated on the surface of the isolation sleeve in the related technology.

[0006] In order to achieve the purpose of the present invention, an isolation component is provided for electrically insulating a first electrode member and a second electrode member in a semiconductor processing device. The isolation component includes an isolation body, in which a gas channel for transmitting a clean gas is provided. The gas channel has at least one gas outlet, and the at least one gas outlet is located on at least one designated surface of the isolation body for purging or removing attachments on the designated surface.

[0007] In some embodiments, the isolation body includes an annular portion, a ring hole of the annular portion is used to accommodate at least a portion of the first electrode member; and an inner circumferential surface of the annular portion is provided with at least one gas outlet as a designated surface.

[0008] In some embodiments, the inner circumferential surface of the annular portion includes an annular area not covered by the first electrode member, and the annular area is located on the side of the outlet end of the first air inlet channel in the first electrode member; multiple air outlets are located in the annular area, and are divided into one or more groups of first air outlet groups arranged at axial intervals along the annular hole, each group of first air outlet groups contains multiple air outlets, and are distributed at circumferential intervals along the annular hole.

[0009] In some embodiments, the end surface of the annular region adjacent to the annular portion is located on the side where the inlet end of the second inlet channel in the second electrode member is located, and is spaced apart from the second electrode member; the end surface of the annular region adjacent to the annular portion is used as a designated surface and is provided with at least one outlet.

[0010] In some embodiments, there are multiple air outlets located on the end surface of the adjacent annular area of ​​the annular portion, and they are divided into one or more second air outlet groups. The multiple second air outlet groups are respectively distributed on multiple circles with different radii around the axis of the annular hole. There are multiple air outlets in each second air outlet group, and they are distributed at circumferential intervals along the annular hole.

[0011] In some embodiments, the total opening area of ​​the gas outlets located in the annular region is greater than the total opening area of ​​the gas outlets located on the end surface of the annular portion adjacent to the annular region.

[0012] The present invention also provides an upper electrode device, comprising a first electrode member and a second electrode member, wherein the first electrode member and the second electrode member are respectively used to electrically connect to the positive and negative poles of the radio frequency power supply in the semiconductor processing equipment; the upper electrode device also includes the isolation component as described above.

[0013] In some embodiments, the first electrode member includes a vertically arranged columnar body, a first air inlet channel is provided in the columnar body, and the air outlet end of the first air inlet channel is located at the lower end face of the columnar body; the isolation body includes an annular portion, the columnar body is provided in the annular hole of the annular portion, and the lower end face of the columnar body is higher than the lower end face of the annular portion; the annular area of ​​the annular portion located below the lower end face of the columnar body is provided as a designated surface with at least one air outlet.

[0014] In some embodiments, the second electrode member includes a plate-shaped body, which is arranged below the isolation body, and a second air inlet channel is provided in the plate-shaped body, and the air inlet end of the second air inlet channel is located on the upper surface of the plate-shaped body and is connected to the annular hole; the lower end surface of the annular portion is spaced apart from the upper surface of the plate-shaped body, and the lower end surface of the annular portion is provided with at least one air outlet.

[0015] The present invention also provides a semiconductor processing device, including a process chamber and an upper electrode device arranged above the process chamber, and a radio frequency power supply, wherein the upper electrode device adopts the above-mentioned upper electrode device.

[0016] The present invention has the following beneficial effects:

[0017] The isolation assembly of the present embodiment includes an isolation body. A gas channel disposed within the isolation body is configured to supply a clean gas to a designated surface of the isolation body. It should be noted that the designated surface is a surface susceptible to deposits in the related art. By supplying clean gas to the designated surface, the clean gas is utilized to reduce deposits formed by plasma on the designated surface, thereby resolving the problem of particles on the surface of the isolation body caused by deposits.

[0018] Other objects and features of the present invention will become clear by reading the specification, claims and drawings of this application. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The above and / or additional aspects and advantages of the present invention will become apparent and readily understood from the description of the embodiments with reference to the following drawings, in which:

[0020] Figure 1 It is an axial view of a semiconductor processing device according to an embodiment of the present application.

[0021] Figure 2 It is a cross-sectional view of a semiconductor processing equipment according to an embodiment of the present application.

[0022] Figure 3 It is a structural schematic diagram of the isolation component of an embodiment of the present application.

[0023] Figure 4 It is a bottom view of the isolation assembly according to an embodiment of the present application.

[0024] Figure 5 is a cross-sectional view of an isolation assembly according to an embodiment of the present application.

[0025] Figure 6 It is a partially enlarged view of the isolation component of an embodiment of the present application.

[0026] Figure 7 It is a structural schematic diagram of the annular plate of the isolation assembly according to an embodiment of the present application.

[0027] Figure 8 is a bottom view of the annular plate of the isolation assembly of an embodiment of the present application. and

[0028] Figure 9 It is a circuit diagram of a semiconductor processing equipment according to an embodiment of the present application. DETAILED DESCRIPTION

[0029] The embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and are not to be construed as limiting the present invention.

[0030] In related technologies, the prolonged exposure of the isolation sleeve to plasma bombardment and the accumulation of reaction byproducts can easily lead to the formation of black deposits on the surface of the isolation sleeve where the reaction gas passes. This phenomenon causes the isolation sleeve to turn black, and the accumulation of black byproducts easily flakes off to form particles, which contaminate the process chamber of semiconductor processing equipment and cause excessive particle levels.

[0031] In order to solve the above technical problems, the present application proposes an isolation assembly 100, which is applied to a semiconductor processing device 10. The isolation assembly 100 is self-cleaning to avoid the formation of attachments due to plasma accumulation, which in turn causes the problem of excessive particles.

[0032] In order to better explain this embodiment, the following is described in combination with the accompanying drawings. It should be noted that the structure in the accompanying drawings is only for schematic illustration and does not specifically limit the structure in this embodiment. Other structures derived therefrom are also within the scope of protection of the present invention.

[0033] The isolation assembly 100 is used to electrically insulate the first electrode member 210 and the second electrode member 220 in the semiconductor processing equipment 10. For details, see Figure 1 and Figure 2 It should be noted that the semiconductor processing equipment 10 includes a first electrode member 210 and a second electrode member 220. When the first electrode member 210 and the second electrode member 220 are respectively connected to the positive and negative poles of the radio frequency power supply 400, an electric field is generated in the area between the first electrode member 210 and the second electrode member 220 to excite the process gas in the electric field to form plasma.

[0034] The isolation assembly 100 includes an isolation body 110, in which a gas channel 120 is provided. The gas channel 120 is used to transmit the clean gas. For details, see Figures 1 to 3 The gas channel 120 has at least one gas outlet 130 . The at least one gas outlet 130 is located on at least one designated surface 111 of the isolation body 110 and is used for purging or removing attachments on the designated surface 111 .

[0035] Optionally, the isolation body 110 is located between the first electrode member 210 and the second electrode member 220. In some embodiments, the isolation body 110 can be made of ceramic material to provide electrical isolation and prevent current flow. Ceramics are a non-metallic material whose electronic layout in its molecular or atomic structure gives it high resistance and insulation properties. This means that under the action of an electric field, ceramics are not easy to conduct electricity, thereby effectively isolating the electric field. Moreover, ceramics generally have a high breakdown voltage, that is, under an external electric field, a high electric field strength is required to cause the ceramic to break down and conduct electricity, so that the ceramic can withstand a large voltage in the electric field without losing its insulation properties. It should be noted that a ceramic coating can also be provided on the surface of the isolation body 110.

[0036] In an optional embodiment, one end of gas channel 120 is connected to a gas source, and the other end of gas channel 120 is used to form at least one gas outlet 130 on designated surface 111. Gas channel 120 is used to supply clean gas to at least one gas outlet 130. Alternatively, the gas source may include a high-purity gas tank, and the output pressure and flow rate of the clean gas can be adjusted by adjusting a pressure controller to accommodate different processes. The connection of gas channel 120 to the gas tank also ensures stable and uniform delivery of clean gas to designated surface 111 of isolation body 110.

[0037] The isolation assembly 100 of the embodiment of the present application includes an isolation body 110. A gas channel 120 disposed within the isolation body 110 is configured to supply a clean gas to a designated surface 111 of the isolation body 110. It should be noted that the designated surface 111 is a surface of the isolation body 110 on which deposits are likely to form. By supplying clean gas to the designated surface 111, the clean gas is utilized to reduce deposits formed by plasma on the designated surface 111, thereby resolving the particle problem caused by deposits on the surface of the isolation body 110.

[0038] It is understood that the cleaning gas includes substances that can purge or remove deposits. In some embodiments, the cleaning gas includes argon and / or hydrogen peroxide. When argon is purged onto the designated surface 111, argon, as an inert gas, has a stable molecular structure and is not susceptible to chemical reactions. Argon is introduced into the designated surface 111 at high speed, and through its flow and the force of the airflow, it can mechanically scrape, impact, or blow away particles, dust, or other impurities attached to the surface. When hydrogen peroxide (H2O2) is used to clean the designated surface 111, hydrogen peroxide has oxidizing properties and can provide oxygen molecules, thus playing an oxidizing role in the cleaning process, and argon is used as a carrier gas. The oxidizing properties of hydrogen peroxide enable it to react with solid deposits such as fluorides and aluminum oxides, oxidizing and decomposing them. This reaction can convert substances attached to the surface into gaseous fluorides, hydrogen, and water. In the embodiments of the present application, argon primarily removes deposits through mechanical cleaning, while hydrogen peroxide, through its oxidizing properties, oxidizes and decomposes the deposits into harmless substances. During the cleaning process, these two gases can be selected and used in combination according to specific application requirements to achieve efficient and comprehensive cleaning effects.

[0039] The isolation body 110 includes an annular portion, and the annular hole 112 of the annular portion is used to accommodate at least a portion of the first electrode member 210. For details, see Figure 4 and Figure 5 In other words, at least a portion of the first electrode member 210 extends into the annular hole 112 of the annular portion. The inner circumferential surface of the annular portion is provided with at least one gas outlet 130 as the designated surface 111, so that the cleaning gas can flow out through the gas outlet 130 located on the inner circumferential surface of the annular portion to purge or remove attachments on the inner circumferential surface of the annular portion.

[0040] The inner circumference of the annular portion includes an annular region 111a that is not covered by the first electrode member 210, and the annular region 111a is located on the side of the outlet end of the first gas inlet channel 212 in the first electrode member 210. Because the process gas enters the first gas inlet channel 212 of the first electrode member 210 and forms plasma in the first gas inlet channel 212, the plasma leaves the first electrode member 210 from the outlet end of the first gas inlet channel 212 and then flows to the second gas inlet channel 222 of the second electrode member 220. Therefore, plasma easily accumulates in the annular region 111a of the inner circumference of the annular portion. To prevent accumulation and formation of attachments on the isolation assembly 100, the embodiment of the present application provides at least one gas outlet 130 in the annular region 111a of the inner circumference of the annular portion as the designated surface 111 to provide clean gas to the annular region 111a. Specifically, the plurality of gas outlets 130 are located in the annular region 111a and are divided into one or more groups of first gas outlets 130. The plurality of first gas outlet groups 130 are spaced apart axially along the annular aperture 112. Each group of first gas outlets 130 includes a plurality of gas outlets 130, which are spaced apart circumferentially along the annular aperture 112. In particular, the axial spacing between any two adjacent groups of first gas outlets 130 is equal, and / or the circumferential spacing between any two adjacent gas outlets 130 within each group of first gas outlets 130 is equal, so that uniform cleaning gas is provided to all portions of the designated surface 111.

[0041] The end surface 111b of the annular portion adjacent to the annular region 111a is located on the side where the inlet end of the second gas inlet channel 222 in the second electrode member 220 is located, and is spaced apart from the second electrode member 220. Since the plasma leaves the first electrode member 210 from the gas outlet end of the first gas inlet channel 212, it will flow to the gas inlet end of the second gas inlet channel 222 of the second electrode member 220. Therefore, plasma easily accumulates on the end surface 111b of the annular portion adjacent to the annular region 111a. In order to prevent accumulation and formation of attachments on the isolation assembly 100, the embodiment of the present application uses the end surface 111b of the annular portion adjacent to the annular region 111a as the designated surface 111 and is provided with at least one gas outlet 130 to provide clean gas to the end surface 111b of the annular portion adjacent to the annular region 111a.

[0042] In one specific embodiment, the end surface 111b of the annular portion adjacent to the annular region 111a may be an annular shape with a radius that gradually increases in the radial direction. Plasma flows sequentially through the annular region 111a and the end surface 111b of the annular portion adjacent to the annular region 111a. The gas channel 120 forms gas outlets 130 in the annular region 111a and the end surface 111b of the annular portion adjacent to the annular region 111a, respectively. This allows the cleaning gas to flow not only through the gas outlets 130 of the first gas outlet 130 group to the annular region 111a, thereby reducing the deposition of plasma on the annular region 111a, but also through the gas outlets 130 of the second gas outlet 130 group to the end surface 111b of the annular portion adjacent to the annular region 111a, thereby reducing the deposition of plasma on the end surface 111b of the annular portion adjacent to the annular region 111a.

[0043] In one specific embodiment, a plurality of gas outlets 130 are located on the end surface 111b of the annular portion adjacent to the annular region 111a, and are divided into one or more groups of second gas outlets 130. The multiple groups of second gas outlets 130 are distributed on multiple circumferences of different radii around the axis of the annular aperture 112. Each group of second gas outlets 130 includes multiple gas outlets 130, which are spaced apart circumferentially along the annular aperture 112. In particular, the axial spacing between any two adjacent groups of second gas outlets 130 is equal, and / or the circumferential spacing between any two adjacent gas outlets 130 in each group of second gas outlets 130 is equal, so that uniform cleaning gas is provided to all portions of the designated surface 111.

[0044] In some embodiments, the isolation assembly 100 further includes an annular plate 140, wherein the specific structure of the annular plate 140 can be found in Figure 7 and Figure 8 An annular mounting cavity with an opening toward the second electrode member 220 can be provided on the end surface of the isolation body 110 adjacent to the annular region 111a. The annular plate 140 is positioned within the annular mounting cavity through the opening. The surface of the annular plate 140 is positioned on the side of the second inlet passage 222 in the second electrode member 220 where the inlet end is located, and the annular plate 140 is spaced apart from the second electrode member 220. The annular plate 140 is provided with at least one through-hole extending through its thickness in the axial direction. The at least one through-hole forms at least one gas outlet 130 on the annular plate 140.

[0045] In an optional embodiment, the total opening area of ​​the gas outlets 130 located in the annular region 111a is greater than the total opening area of ​​the gas outlets 130 located on the end surface 111b of the annular portion adjacent to the annular region 111a. This is because the process gas or plasma passes through the annular region 111a more frequently. Therefore, the gas flow rate of the cleaning gas provided by the gas channel 120 to the annular region 111a is greater than the gas flow rate of the cleaning gas provided to the end surface 111b of the annular portion adjacent to the annular region 111a, thereby thoroughly and comprehensively cleaning the designated surface 111 of the isolation body 110.

[0046] In some embodiments, the air outlets 130 located in the annular region 111a are the same size as the air outlets 130 located on the first end surface, and the number of air outlets 130 located in the annular region 111a is greater than the number of air outlets 130 located on the first end surface. In other embodiments, the number of air outlets 130 located in the annular region 111a is the same as the number of air outlets 130 located on the first end surface, and the size of the air outlets 130 located in the annular region 111a is greater than the size of the air outlets 130 located on the first end surface.

[0047] The gas channel 120 includes a third gas inlet channel, a uniform flow chamber 123, and at least one sub-channel. One end of the third gas inlet channel is used to communicate with the gas source of the clean gas, and the other end is communicated with the uniform flow chamber 123. One end of the at least one sub-channel is communicated with the uniform flow chamber 123, and the other end is used as a gas outlet 130 located on the designated surface 111. For details, please refer to Figure 6 .

[0048] Specifically, if Figure 5 As shown, the third air inlet channel includes a first channel section 121 and a second channel section 122. The second channel section 122 is extended along the axial direction of the annular hole 112. The first channel section 121 and the second channel section 122 are arranged at an angle, for example, the angle can be 90 degrees.

[0049] Specifically, if Figure 6 As shown, at least one sub-channel includes a first connecting channel 124 and a second connecting channel 125, the other end of the first connecting channel 124 serves as the air outlet 130 of the first air outlet group 130 and is located in the annular area 111a, and the other end of the second connecting channel 125 serves as the air outlet 130 of the second air outlet group 130 and is located on the end surface 111b of the annular portion adjacent to the annular area 111a.

[0050] It is understood that the cleaning gas passes through the gas source, sequentially through the third gas inlet channel, the flow-uniform chamber 123, and the first connecting channel 124, and flows to the gas outlet 130 located in the annular region 111a, thereby cleaning the annular region 111a. Furthermore, the cleaning gas passes through the gas source, sequentially through the third gas inlet channel, the flow-uniform chamber 123, and the second connecting channel 125, and flows to the gas outlet 130 located on the end surface 111b of the annular portion adjacent to the annular region 111a, thereby cleaning the end surface 111b of the annular portion adjacent to the annular region 111a.

[0051] In a specific embodiment, the cleaning gas includes an inert gas for purging and / or a cleaning gas for removing deposits on the designated surface 111. Optionally, the gas channel 120 is configured to supply a purge gas to the designated surface 111 when the RF power source 400 is operating. The purge gas is used to purge the designated surface 111 to prevent deposits from adhering to the designated surface 111. When the RF power source 400 is shut down, the gas channel 120 is configured to supply a mixture of a reactive gas and a purge gas to the designated surface 111. The reactive gas is used to react with deposits on the designated surface 111 to generate a liquid or gas.

[0052] It should be noted that when the RF power supply 400 is operating, it effectively cleans the designated surface 111 by providing precisely controlled purge gas. The purge gas prevents any deposits from adhering to the designated surface, thereby ensuring the cleanliness of the outer surface of the isolation body 110. When the RF power supply 400 is shut down, the gas channel 120 provides a mixed gas comprising a reactive gas and a purge gas. The introduction of this mixed gas not only helps clean the designated surface 111 but also introduces a reaction mechanism that reacts with deposits adhering to the designated surface 111. This reaction can generate liquid or gas, further ensuring the cleanliness of the designated surface 111. This allows the isolation assembly 100 to not only self-clean while the RF power supply 400 is operating, but also maintain efficient cleaning performance when shut down. This dual mechanism provides comprehensive protection for the isolation assembly 100, preventing the formation of deposits while effectively cleaning the designated surface 111 through chemical reactions during shutdown.

[0053] In some embodiments, the purge gas includes argon and the reaction gas includes hydrogen peroxide. Specifically, the ratio of the purge gas to the reaction gas in the mixed gas is greater than or equal to 5:1 and less than or equal to 10:1.

[0054] Isolation assembly 100 also includes a first air inlet branch 510 and a second air inlet branch 520, which are arranged in parallel. First air inlet branch 510 is used to provide purge gas, and second air inlet branch 520 is used to provide reactant gas. It should be noted that first air inlet branch 510 and second air inlet branch 520 are both located outside isolation body 110 and between gas channel 120 and the gas source.

[0055] In some embodiments, the first air intake branch 510 and the second air intake branch 520 are connected to the gas channel 120 through the air intake main pipe 720. For details, see Figure 1 and Figure 9 The semiconductor process equipment includes a process gas pipeline 710 located outside the isolation body 110 for providing process gas. Optionally, the angle between the process gas pipeline 710 and the main intake pipeline 720 can be greater than 0 degrees and less than 180 degrees to avoid interference between the process gas pipeline 710 and the main intake pipeline 720. For example, the angle between the process gas pipeline 710 and the main intake pipeline 720 is 180 degrees.

[0056] The present invention further provides an upper electrode assembly, comprising a first electrode member 210, a second electrode member 220, and the isolation assembly 100 of the above embodiment. The first electrode member 210 and the second electrode member 220 are respectively used to electrically connect to the positive and negative electrodes of the RF power supply 400 in the semiconductor processing equipment 10.

[0057] RF power supply 400 is a device that generates high-frequency alternating current (AC). Its output frequency is typically within the RF range, ranging from tens of kilohertz (kHz) to several gigahertz (GHz). The high-frequency operating frequency of RF power supply 400 causes the electric field to vary rapidly in space, causing gas molecules or atoms to oscillate rapidly within the electric field. RF power supply 400 typically uses a non-DC power source to avoid electrode reactions that might occur under a DC electric field, thereby maintaining plasma stability and preventing corrosion of electrode materials.

[0058] The first electrode member 210 includes a vertically arranged cylindrical body 211. A first air inlet channel 212 is provided in the cylindrical body 211, with the outlet end of the first air inlet channel 212 located at the lower end surface of the cylindrical body 211. The isolation body 110 includes an annular portion. The cylindrical body 211 is disposed within an annular hole 112 of the annular portion, with the lower end surface of the cylindrical body 211 being higher than the lower end surface of the annular portion. An annular region 111a of the annular portion, located below the lower end surface of the cylindrical body 211, serves as a designated surface 111 and is provided with at least one air outlet 130.

[0059] The second electrode member 220 includes a plate-shaped body 221. The plate-shaped body 221 is disposed below the isolation body 110 and includes a second air inlet channel 222. The air inlet end of the second air inlet channel 222 is located on the upper surface of the plate-shaped body 221 and communicates with the annular hole 112. The lower end surface of the annular portion is spaced apart from the upper surface of the plate-shaped body 221 and is provided with at least one air outlet 130.

[0060] The present invention further provides a semiconductor processing apparatus 10, which includes a process chamber 300, the upper electrode device of the above embodiment, and a radio frequency power supply 400. The upper electrode device is disposed above the process chamber 300. The radio frequency power supply 400 is located outside the process chamber 300.

[0061] The semiconductor processing equipment 10 of the present application further includes an electromagnetic shield 600, a chamber cover 310, and a spray assembly. The chamber cover 310 is located between the RF power supply 400 and the process chamber 300. The electromagnetic shield 600 and the isolation body 110 are both located on the side of the chamber cover 310 facing away from the process chamber 300.

[0062] The electromagnetic radiation generated by the RF power supply 400 may interfere with surrounding electronic equipment or systems. By using an electromagnetic shield 600 around the RF power supply 400, the propagation of electromagnetic radiation can be effectively blocked or weakened, confining it within the electromagnetic shield 600. This helps maintain the electromagnetic compatibility of the system and prevents electromagnetic radiation from negatively impacting the surrounding environment and other devices. The first electrode member 210 and the isolation body 110 are located within the electromagnetic shield 600, so that the electromagnetic shield 600 not only blocks electromagnetic radiation but also provides a protective layer, isolating the isolation body 110 from the external environment.

[0063] In the description of the present invention, it should be understood that the terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of the technical features indicated. Therefore, features specified as "first" or "second" may explicitly or implicitly include one or more of the specified features. In the description of the present invention, "plurality" means two or more, unless otherwise specifically defined.

[0064] In the description of the present invention, it should be noted that, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood in a broad sense. For example, they may refer to fixed connections, detachable connections, or integral connections; mechanical connections, electrical connections, or mutual communication; direct connections or indirect connections through an intermediate medium; and internal communication between two components or interaction between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on specific circumstances.

[0065] In the description of the present invention, unless otherwise expressly specified or limited, a first feature being "above" or "below" a second feature may include the first and second features being in direct contact, or may include the first and second features being in contact not directly but through another feature between them. Moreover, a first feature being "above," "above," and "above" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below," "below," and "below" a second feature includes the first feature being directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0066] The disclosure below provides many different embodiments or examples for realizing different structures of the present invention. In order to simplify the disclosure of the present invention, the components and settings of specific examples are described below. Of course, they are merely examples and are not intended to limit the present invention. In addition, the present invention may repeat reference numbers and / or reference letters in different examples. Such repetition is for the purpose of simplicity and clarity and does not in itself indicate the relationship between the various embodiments and / or settings discussed. In addition, the present invention provides examples of various specific processes and materials, but those skilled in the art will recognize the application of other processes and / or the use of other materials.

[0067] Throughout this specification, reference to terms such as "one embodiment," "certain embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples" means that a specific feature, structure, material, or characteristic described in conjunction with an embodiment or example is included in at least one embodiment or example of the present invention. In this specification, illustrative descriptions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

[0068] It will be understood that the above embodiments are merely exemplary embodiments for illustrating the principles of the present invention, and the present invention is not limited thereto. Those skilled in the art will appreciate that various modifications and improvements can be made without departing from the spirit and substance of the present invention, and such modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. An isolation assembly for electrically insulating a first electrode member and a second electrode member in a semiconductor processing device, characterized in that: The isolation assembly includes an isolation body, in which a gas channel for transmitting clean gas is provided. The gas channel has at least one gas outlet, and at least one gas outlet is located on at least one designated surface of the isolation body for purging or removing attachments on the designated surface.

2. The isolation assembly according to claim 1, wherein: The isolation body includes an annular portion, and the annular hole of the annular portion is used to accommodate at least a portion of the first electrode member; The inner peripheral surface of the annular portion is provided with at least one of the gas outlets as the designated surface.

3. The isolation assembly according to claim 2, wherein: The inner circumferential surface of the annular portion includes an annular area not covered by the first electrode member, and the annular area is located on a side of the outlet end of the first air inlet channel in the first electrode member; The plurality of air outlets are located in the annular area and are divided into one or more first air outlet groups spaced apart along the axial direction of the annular hole. Each first air outlet group contains a plurality of air outlets spaced apart along the circumference of the annular hole.

4. The isolation assembly according to claim 3, characterized in that An end surface of the annular portion adjacent to the annular region is located on a side of the second inlet end of the second inlet passage in the second electrode member and is spaced apart from the second electrode member; An end surface of the annular portion adjacent to the annular region serves as the designated surface and is provided with at least one of the gas outlets.

5. The isolation assembly according to claim 4, characterized in that There are multiple air outlets located on the end surface of the annular area adjacent to the annular portion, and they are divided into one or more second air outlet groups. The multiple groups of second air outlet groups are respectively distributed on multiple circles with different radii around the axis of the annular hole. There are multiple air outlets in each group of the second air outlet groups, and they are distributed at intervals along the circumference of the annular hole.

6. The isolation assembly according to claim 4, characterized in that The total opening area of ​​the air outlets located in the annular region is greater than the total opening area of ​​the air outlets located on the end surface of the annular portion adjacent to the annular region.

7. An upper electrode device, comprising a first electrode member and a second electrode member, wherein the first electrode member and the second electrode member are respectively used to electrically connect to the positive electrode and the negative electrode of a radio frequency power supply in a semiconductor processing device; characterized in that The upper electrode device further comprises an isolation assembly as claimed in any one of claims 1 to 6.

8. The upper electrode device according to claim 7, characterized in that: The first electrode member includes a vertically arranged columnar body, wherein a first air inlet channel is provided in the columnar body, and an air outlet end of the first air inlet channel is located at a lower end surface of the columnar body; The isolation body includes an annular portion, the columnar body is arranged in the annular hole of the annular portion, and the lower end surface of the columnar body is higher than the lower end surface of the annular portion; the annular area of ​​the annular portion located below the lower end surface of the columnar body is provided with at least one air outlet as the designated surface.

9. The upper electrode device according to claim 8, characterized in that: The second electrode member includes a plate-shaped body, the plate-shaped body is disposed below the isolation body, and a second air inlet channel is disposed in the plate-shaped body, an air inlet end of the second air inlet channel is located on the upper surface of the plate-shaped body and communicates with the annular hole; The lower end surface of the annular portion is spaced apart from the upper surface of the plate-shaped body, and the lower end surface of the annular portion is provided with at least one air outlet.

10. A semiconductor processing equipment, characterized in that: It comprises a process chamber, an upper electrode device arranged above the process chamber, and a radio frequency power supply, wherein the upper electrode device adopts the upper electrode device according to any one of claims 7 to 9.

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