Semiconductor power module, semiconductor power package, and method for manufacturing semiconductor power module

Abstract

A semiconductor power module (1) comprises at least one semiconductor power device (2) having electrical contacts, a first metal contact (11) and a second metal contact (12). The first metal contact (11) is directly coupled to the first side (5) of the semiconductor power device (2). The second metal contact (12) is directly coupled to a second side (6) of the semiconductor power device (2) opposite the first side (5) with respect to the stacking direction (R) of the semiconductor power module (1). The control terminal (14) is electrically coupled to the electrical contact (7) of the semiconductor power device (2). The semiconductor power module (1) further comprises an encapsulation (4) which encloses the semiconductor power device (2) and the first and second metal contacts (11, 12) such that the semiconductor power device (2) and the first and second metal contacts (11, 12) are embedded in the encapsulation (4), respective surfaces (15, 16) of the control terminal (14) and of the first and second metal contacts (11, 12) facing outward with respect to the stacking direction (R) are exposed from the package (14).

Description

Technical Field

[0001] This disclosure relates to a semiconductor power module and a method for manufacturing the semiconductor power module. This disclosure also relates to a corresponding semiconductor power package. Background Technology

[0002] Power modules, for example, are used in automotive inverters and require a cooler for liquid cooling to dissipate heat during operation. This cooler is fixed to the power module and may require additional components to establish a stable connection and reliable cooling.

[0003] There is a need for a semiconductor power module that facilitates reliable and efficient heat dissipation during operation. Summary of the Invention

[0004] Embodiments of this disclosure relate to a semiconductor power module with a cooling concept that enables effective and reliable heat dissipation. Embodiments of this disclosure also relate to a corresponding semiconductor power package and a method for manufacturing the semiconductor power module.

[0005] According to one embodiment, a semiconductor power module includes at least one semiconductor power device having electrical contacts (e.g., for operation), a first metal contact, and a second metal contact. The first metal contact is directly coupled to a first side of the semiconductor power device. The second metal contact is directly coupled to a second side of the semiconductor power device, the second side being opposite to the first side in the stacking direction of the semiconductor power module. The first side of the semiconductor power device may also be referred to as the bottom side, and the second side of the semiconductor power device may also be referred to as the top side.

[0006] The semiconductor power module further includes a control terminal electrically connected to an electrical contact (e.g., a gate) of the semiconductor power device. The semiconductor power module further includes a package encapsulating the semiconductor power device and a first metal contact and a second metal contact, such that the semiconductor power device and the first and second metal contacts are embedded within the package. The corresponding outward-facing surfaces of the control terminal and the first and second metal contacts relative to the stacking direction are exposed from the package, respectively enabling electrical operation or efficient cooling.

[0007] By using the described configuration, it is feasible to create a semiconductor power module that facilitates reliable and efficient heat dissipation during operation. In particular, the semiconductor power module is suitable for automotive or aerospace applications and / or high-voltage direct current (HVDC) applications, such as those suitable for voltages of at least 0.5 kV. The described metal contact structure on opposite sides of the semiconductor power module enables bi-lateral cooling. Preferably, the metal contacts are in direct contact with the corresponding cooler structure or even with the coolant itself.

[0008] A semiconductor power module may include one or more semiconductor power devices, wherein the corresponding semiconductor power devices may be formed as metal-oxide-semiconductor field-effect transistors (MOSFETs), or more generally as metal-insulator-semiconductor field-effect transistors (MISFETs), dual-mode insulated-gate transistors (BIGTs), or insulated-gate bipolar transistors (IGBTs) or diodes (such as freewheeling diodes (FWDs)).

[0009] According to a preferred embodiment, the semiconductor power module includes two or more semiconductor power devices, each having a corresponding electrical contact (e.g., an electrical contact for operation) and two or more first metal contacts and second metal contacts. The first metal contacts are directly coupled to a corresponding first side of the associated semiconductor power device. The second metal contacts are directly coupled to a corresponding second side of the associated semiconductor power device, the corresponding second side being opposite to the corresponding first side relative to the stacking direction. The second metal contacts are arranged to be laterally spaced from each other at the associated second side of the semiconductor power device relative to a lateral direction perpendicular to the stacking direction. The semiconductor power module further includes at least one third metal contact that is directly coupled to a corresponding terminal point of the semiconductor power device at the second side of the associated semiconductor power device. A package encapsulates the semiconductor power device and the corresponding first and second metal contacts and the third metal contact, such that the semiconductor power device and the corresponding first and second metal contacts and the third metal contact are embedded in the package. The control terminal is electrically connected to the corresponding terminal point of the associated semiconductor power device by means of a third metal contact, and the control terminal, the corresponding surfaces of the first and second metal contacts, and the outward-facing surface of the third metal contact relative to the stacking direction are exposed from the package.

[0010] The described configuration allows for advantageous setup and efficient heat dissipation of a semiconductor power module with multiple semiconductor power devices. A first metal contact can form a base plate, such that second and third metal contacts are formed on the top side of the corresponding top portion. Accordingly, the corresponding exposed surfaces of the metal contacts point towards the bottom or top. Thus, the exposed surfaces of one or more first metal contacts are arranged at the bottom of the semiconductor power module and away from the top. Correspondingly, the exposed surfaces of one or more second metal contacts are arranged at the top of the semiconductor power module and away from the bottom.

[0011] Therefore, the exposed surfaces of the first and second metal contacts can form the lowermost and uppermost surfaces of the semiconductor power module, respectively. However, the package or semiconductor power module may also include additional portions extending lower or higher than the exposed surfaces of the first and second metal contacts. A third metal contact is formed on the same side as the second metal contact and may also be at least partially exposed to achieve electrical contact with a control terminal. The third metal contact may substantially form a gate structure connecting the gates of two or more semiconductor power devices. The control terminal achieves a gate collector connecting all gates by contacting the one or more third metal contacts. Thus, the control terminal forms a common gate track for the semiconductor power module. The control terminal may also be embedded inside the package and not exposed on the top side of the module, and may have only one connection point on one side, for example, to achieve electrical connection. Alternatively or additionally, the control terminal may be electrically connected to a corresponding second metal contact of an associated semiconductor power device.

[0012] Power semiconductor modules are fundamental components of power converters and include power semiconductor devices that dissipate heat during operation, causing temperatures to rise within the module. Therefore, cooling the power module is a fundamental part of the system design to ensure that the power module or semiconductor does not fail and to keep the characteristics of the semiconductor devices and the power module within expected ranges. Semiconductor power modules can be cooled by heat sinks or coolers, such as by air, water, or other fluids. This coolant can flow vertically from top to bottom within the power module, or vice versa, where the top or bottom surface acts as a corresponding busbar for the emitter or collector potential of the semiconductor module, respectively. In the context of this disclosure, it is found that for conventional power modules and cooling concepts, dissipated heat is primarily removed from the collector side of the power module because the internal structure of the power module may include ceramic layers, spacers, or spring elements to establish a strong operating contact between the emitter and collector sides. Such additional elements on the emitter side (such as spring systems) form a bottleneck in thermal performance.

[0013] The described configuration of a semiconductor power module comprising one or more semiconductor power devices significantly improves thermal performance. The described power module design enables true double-sided cooling, with heat removal uniformly distributed between the top and bottom sides of the semiconductor power module. Due to the structure of the described semiconductor power module, no substrate, spring system, or other internal components are required.

[0014] The internal spaces of a semiconductor power module surrounding, above, and below the semiconductor device can be filled with encapsulation material. For example, the encapsulation can be made of or comprise an epoxy molding compound polymer material having a filler content of more than 60% by weight. Alternatively, the filler content can be greater than 40% or greater than 70% by weight. Accordingly, the encapsulation can be formed by molding to securely embed components of the semiconductor power module. Alternatively or additionally, the encapsulation can be made of or comprise a thermosetting or thermoplastic material.

[0015] According to another embodiment, the package can be formed such that it includes a circumferential edge having a plurality of creepage ribs that laterally surround one or more semiconductor power devices and corresponding first and second metal contacts. For example, the shape of the creepage ribs is preferably coordinated with a given voltage level, a given package material, and / or a degree of contamination. This voltage level can be set to 3.3 kV or 5.2 kV or up to 10 kV. The given package material can be set to include an epoxy molding compound. The degree of contamination can be set, for example, to level 2, and can include information about air or ambient gases and / or pressure and / or density.

[0016] According to another embodiment of the semiconductor power module, two or more first metal contacts are formed from a single piece arranged to be laterally spaced from each other relative to the lateral direction by corresponding recesses at an associated bottom or first side of the semiconductor power device. The first metal contacts are configured as corresponding protrusions rising from a common continuous plate-like bottom member, wherein the corresponding protrusions face the corresponding bottom of the associated semiconductor power device. Alternatively, the first metal contacts can be formed as separate elements and subsequently connected together. Recesses form predetermined cuts between two adjacent protrusions. The thickness of such a plate-like bottom in the region of the corresponding recess can be formed such that the thickness is at most 80% smaller than the total thickness of the first metal contacts including the adjacent protrusions and the plate-like bottom. In the context of this disclosure, this configuration can significantly reduce thermomechanical stress within the semiconductor power module and can contribute to very stable and efficient heat dissipation.

[0017] According to another embodiment, the first metal contact, the second metal contact, and / or the third metal contact (if present) can be coupled to corresponding portions of the associated semiconductor power device and can be made of metal or metal alloy. The first metal contact, the second metal contact, and / or the third metal contact can be made of at least one of copper, aluminum, molybdenum, and magnesium, or mainly comprise at least one of copper, aluminum, molybdenum, and magnesium.

[0018] According to one embodiment, a semiconductor power package includes a cooler unit for liquid or fluid cooling of a semiconductor power device, the cooler unit including a first cooler structure and a second cooler structure. The semiconductor power package further includes embodiments of a semiconductor power module, wherein corresponding first metal contacts are directly coupled to the first cooler structure, and corresponding second metal contacts are directly coupled to the second cooler structure. Specifically, the first and / or second cooling structures may include at least one of an inlet and an outlet, and a heat pipe or fluid channel connecting the inlet and outlet for guiding coolant. Furthermore, the semiconductor power package may also include two or more coolers on one or both sides of the semiconductor power module.

[0019] Since the described semiconductor power package includes embodiments of semiconductor power modules, the features and characteristics of the described semiconductor power modules are also disclosed with respect to the semiconductor power package, and vice versa.

[0020] According to one embodiment, a method for manufacturing a semiconductor power module includes providing one or more semiconductor power devices, one or more first metal contacts, and one or more second metal contacts. The method further includes, for example, connecting the respective semiconductor power devices and the respective first metal contacts to each other by means of die bonding, such that the first metal contacts are directly connected to a first side of the associated semiconductor power device. The method further includes, for example, connecting the respective semiconductor power devices and the respective second metal contacts to each other by means of top bonding, such that the second metal contacts are directly connected to a second side of the associated semiconductor power device, the second side being opposite to the first side relative to the stacking direction of the semiconductor power module. The method further includes, for example, forming an encapsulation by molding a polymer material of epoxy molding compound, such that the semiconductor power devices and the first and second metal contacts are encapsulated and embedded within the encapsulation. The respective bottom or top surface of the first or second metal contact faces outward from the encapsulation relative to the stacking direction and is exposed from the encapsulation. The method further includes providing a control terminal and electrically connecting the control terminal to a corresponding electrical contact of an associated semiconductor power device, for example by means of one or more third metal contacts, such that the control terminal is at least partially exposed from the package.

[0021] The package can be made of a high-temperature resistant material using a molding process (e.g., transfer molding, injection molding, and / or compression molding). According to embodiments of the manufacturing method, forming the package by molding may include completely encapsulating and embedding one or more semiconductor power devices and corresponding first and / or second metal contacts within the package, and subsequently exposing the respective outward-facing surfaces of the first and second metal contacts relative to the stacking direction from the package. Alternatively or additionally, control terminals may first be completely embedded in the package and then exposed. Exposing the corresponding metal contacts or elements can be accomplished by removing the covering package material, for example, using mechanical grinding, polishing, sawing, and / or other machining methods. Alternatively or additionally, the package material may be chemically removed.

[0022] Since the described method is configured for manufacturing embodiments of semiconductor power modules, the features and characteristics of the described semiconductor power modules are also disclosed with respect to the manufacturing method, and vice versa.

[0023] The manufacture of an embodiment of the semiconductor power module can be performed as follows: 1. Preferably, one or more semiconductor chip dies are bonded to the bottom contact assembly that realizes the first metal contact by Ag or Cu sintering.

[0024] 2. Preferably, the top contact assembly for the second metal contacts used for power (source / emitter) and control (gate) is incorporated by Ag or Cu sintering.

[0025] 3. Forming a package for a semiconductor power module through transfer molding.

[0026] 4. Attach a control board to implement the control terminals, such as a two-layer printed circuit board (PCB) with a layer for gate contacts and a layer for source / emitter Kelvin contacts.

[0027] 5. Subsequently, the semiconductor power module can be integrated into the cooler unit, with a cooler attached to each side. The size of the semiconductor power module allows for direct integration with heat sinks, such as Cu or Ag sintering, or alternatively, dry contacts.

[0028] The first and second metal contacts realize a metal cooler portion with a predetermined design. Exposed surfaces may include, for example, rectangular, square, elliptical, or circular shapes. The semiconductor device may be based on silicon (Si) or silicon carbide (SiC). The described configuration of the semiconductor power modules can be stacked or interconnected to form a cell or package with multiple semiconductor power modules to scale current capability according to the intended application.

[0029] The described semiconductor power module is compatible with relatively large Si chips implemented using semiconductor power devices, and the size of each chip can be greater than 100 mm. 2 Based on SiC chips implemented using semiconductor power devices, the size of these chips can be, for example, 25 mm. 2 According to an embodiment, for example, there may be six Si-based semiconductor power modules interconnected, each module comprising eight BIGTs, with a total semiconductor area of ​​14,000 mm². 2 Assuming a creepage distance requirement of 5.2 kV is met. According to another embodiment, for example, nine SiC-based semiconductor power modules may be interconnected, each module comprising sixteen MOSFETs, with a total semiconductor area of ​​3.600 mm². 2 Assuming that the creepage distance requirement of 3.3 kV is met.

[0030] The first metal contact forming the bottom contact assembly is preferably made of a single piece of metal, but includes cutouts that separate the individual islands of each semiconductor chip. These cutouts or recesses significantly reduce thermomechanical stress within the semiconductor chip. The semiconductor power module can be implemented as a non-insulated module, and heat dissipation within the bottom contact assembly can be kept low and negligible, potentially causing only a slight increase in junction temperature, for example, less than 2 K.

[0031] The described semiconductor power module configuration enables effective double-sided cooling and facilitates reliable heat dissipation during operation of the semiconductor power module or its corresponding semiconductor power package. For example, the semiconductor power module facilitates the switch to SiC devices, meeting the significantly lower performance losses required for "SiC readiness" in the HVDC market.

[0032] Furthermore, the described semiconductor power module design can save costs by utilizing a double-sided cooling method, which reduces the thermal resistance of the power module by up to 40% compared to conventional setups. Therefore, the described semiconductor power module configuration further achieves higher current capability compared to conventional setups. Using superior packaging materials, the semiconductor power module design achieves higher junction temperatures as required. This may be particularly interesting for SiC devices, which are inherently capable of operating at significantly higher temperatures (above 200°C) but are typically limited by packaging technology.

[0033] Furthermore, replacing silicone encapsulations with molding compounds containing a large amount of inert filler material relaxes the requirements for cell design because it can significantly reduce gas pressure. Even in the extreme case where an electric arc forms between the collector and emitter sides of a semiconductor power module, the metal and semiconductor materials are in the direct path of the arc. Therefore, power module stacks with multiple semiconductor power modules can be simplified. For example, components such as external frames can be omitted, and the busbars can be made less robust. Attached Figure Description

[0034] Exemplary embodiments are explained below with the aid of schematic diagrams and reference numerals. In the accompanying drawings: Figures 1 to 14 Embodiments of semiconductor power modules or semiconductor power packages or their components are shown in different views; and Figure 15 It shows the method of manufacturing according to Figures 1 to 14 The flowchart shows a method for developing semiconductor power devices.

[0035] The accompanying drawings are included to provide further understanding. It should be understood that the embodiments shown in the drawings are illustrative and not necessarily drawn to scale. The same reference numerals denote elements or parts having the same function. Descriptions of elements or parts will not be repeated in subsequent drawings as long as their functions correspond to each other in the drawings. For clarity, elements may not have corresponding reference numerals in all figures. Detailed Implementation

[0036] Figures 1 to 14 Embodiments of a semiconductor power module 1 or its components are shown in different views. The semiconductor power module 1 (hereinafter referred to as module 1) can form a sub-unit of a semiconductor power stack or package 3 having multiple modules 1. Module 1 includes multiple semiconductor power devices 2 (hereinafter referred to as devices 2) embedded in a package 4, each semiconductor power device having corresponding electrical contacts, such as electrical contacts for operation. For example, device 2 can be implemented as an IGBT, MOSFET / MISFET, or BIGT having at least three external contacts (e.g., drain, source, and gate, or collector, emitter, and gate, respectively).

[0037] Module 1 further includes a plurality of first metal contacts 11, which are directly coupled to a corresponding first side 5 of the associated device 2 (see [link]). Figure 11 and Figure 12Module 1 further includes a plurality of second metal contacts 12 directly coupled to a corresponding second side 6 of the associated device 2, the second side 6 being opposite to a corresponding first side 5 relative to the stacking direction R. The second metal contacts 12 are arranged to be laterally spaced apart from each other at the associated second side 6 of the device 2 relative to lateral directions A and B perpendicular to the stacking direction R. Module 1 further includes a plurality of third metal contacts 13 directly coupled to a corresponding terminal point 7 of the device 2 at the associated second side 6 of the device 2 (see...). Figure 6 as well as Figures 10 to 13 Module 1 further includes a control terminal 14, which is electrically connected to a corresponding terminal point of the associated device 2 by means of a third metal contact 13.

[0038] The package 4 is formed such that it encapsulates the device 2 and the corresponding first metal contact, second metal contact, and third metal contact 11-13, such that these components are embedded in the package 4. The control terminal 14), the corresponding surfaces 15 and 16 of the first metal contact 11 and the second metal contact 12 facing outwards relative to the stacking direction R, and the corresponding surface 17 of the third metal contact 13 facing outwards relative to the stacking direction are exposed from the package 4 (see [link]). Figure 2 , Figure 6 , Figure 8 as well as Figures 10 to 14 ).

[0039] Encapsulation 4 can be formed by molding from a polymer epoxy molding compound having a given filler content (e.g., 60% by weight). The first metal contact, the second metal contact, and the third metal contact 11-13 are bonded to the associated first side 5 or the second side 6 of the respective device 2 and can be made of metal or metal alloy (e.g., mainly comprising Cu, Al, Mo, and / or Mg).

[0040] The first metal contact 11 can be formed as a single piece, such that the protrusions 9 are arranged to be laterally spaced apart from each other by corresponding recesses 8 at the associated first side 5 of the device 2 (see [reference]). Figure 8 Therefore, the first metal contact 11 is configured as a protrusion 9 rising from the common continuous plate-like bottom member 10, and the protrusion 9 is intended to face the bottom of the associated device 2. Regarding the thickness z of the first metal contact 11, refer to... Figure 8 and Figure 9 The thickness z1 of the plate-shaped bottom 10 in the corresponding cut or recess 8 region can be formed to be at most 80% smaller than the total thickness z0 of the protrusion 9 and the plate-shaped bottom 10.

[0041] Figure 8The illustration shows a first metal contact 11, implemented as a plate bottom 10 with recesses 8 between various protrusions 9, these protrusions forming corresponding positions for attachment to associated devices 2. Instead of a monolithic support plate, thermomechanical stress can be significantly reduced (see Figure 10). Figure 9 ). Figure 9 The effect of the notch or recess 8 in the first metal contact 11 on the thermomechanical stress in the device 2 is shown. Figure 9 The figure shows the average von Mises stress as a function of the depth z2 of the recess 8. The overall support plate will exhibit its limits, such as... Figure 9 As illustrated in the upper left corner, this limit corresponds to a depth z2 of recess 8 being equal to 0. For example, in Figure 9 The lower right corner gives another limit, which corresponds to the depth z2 of the recess 8 being equal to 2.5 mm.

[0042] according to Figure 1 The perspective view shows that module 1 includes eight embedded devices 2 and eight second metal contacts 12, as well as corresponding exposed surfaces 16. Control terminals 14 are formed as metal strip elements connecting to third metal contacts 13, which in turn connect to the gates or terminal points 7 of the respective devices 2 (see [reference]). Figure 10 and Figure 12 ).

[0043] according to Figure 2 The 3D view shows that module 1 includes sixteen embedded devices 2 and sixteen second metal contacts 12, as well as corresponding exposed surfaces 16. Figure 2 Control terminal 14 is not shown.

[0044] according to Figure 3 The top view shows that module 1 includes nine embedded devices 2 and nine second metal contacts 12, as well as corresponding exposed surfaces 16. Figure 3 The control terminal 14 is not shown. The exposed area or surface 16 of the second metal contact 12 on the top side and the top side of the control panel are visible.

[0045] Figure 4 The illustration shows a semiconductor power package 3 (hereinafter referred to as package 3), which includes one or more embodiments of module 1 and a cooler unit 20 for liquid cooling of device 2. The cooler unit 20 may include one or more cooling structures 21, 22, which are coupled to corresponding exposed surfaces 15, 16 of the first metal contact 11 and the second metal contact 12. Figure 4 The cooler unit 20 includes a top cooling structure 22, which is directly coupled to a corresponding second metal contact 12. According to... Figure 10The cooler unit 20 includes two cooling structures 21 and 22. The first cooling structure 21 is directly connected to the bottom cooler of the corresponding first metal contact 11, and the second cooling structure 22 is directly connected to the top cooler of the corresponding second metal contact 12. The coolant of the cooler unit 20 may (but is not required to) be in direct contact with the exposed surfaces 15 and 16 of the first and second metal contacts 11 and 12. The coolant is selected accordingly based on the intended application.

[0046] The molded body of package 4 includes a circumferential edge 41 and creepage ribs 42 at the edge 41, which surround the periphery of module 1 to meet a predetermined creepage distance (see...). Figure 7 ).

[0047] Figures 11 to 14 It shows the production of such Figure 1 , Figures 5 to 7 as well as Figure 10 Manufacturing steps of an embodiment of module 1 shown. Figures 11 to 14 Each step of the manufacturing process is shown in a perspective view (top), a corresponding side view (middle), and a corresponding top view (bottom).

[0048] This process can be formed according to a flowchart of the method used in the embodiment for manufacturing module 1 and / or package 3.

[0049] In step S1, a first metal contact 11 is provided in the form of a plate-shaped bottom 11 and a plurality of protrusions 9 and recesses 8 therebetween. According to... Figures 11 to 14 In the illustrated embodiment, eight protrusions 9 and seven recesses 8 are formed in the metal bottom assembly relative to the lateral directions A and B. Additional components of module 1 and possibly a package 3 may also be provided. Specifically, the shapes of the first metal contact 11 and / or the second metal contact 12 are formed in accordance with the size and shape of the chip or device 2.

[0050] In a further step S2, for example by means of Ag or Cu sintering, the die of chip or device 2 is bonded to the first metal contact 11 or the associated protrusion 9 (see...). Figure 11 ).

[0051] In a further step S3, the second metal contact 12 is bonded to the associated device 2, for example, by means of Ag or Cu sintering (see...). Figure 12In this respect, the top metal assembly may also include power (source / emitter) contacts and control (gate) contacts. Therefore, two metal connection structures can be formed between the four devices 2 respectively, thereby realizing the third metal contact 13. The third metal contact 13 is formed in the shape of a rectangular or square frame, thereby connecting the corresponding gates or terminal points 7 of the interconnecting devices 2 that face each other.

[0052] In a further step S4, the package 4 is formed, for example, by transfer molding, injection molding, or compression molding. The corresponding surfaces 15-17 of the first metal surface, the second metal surface, and the third metal surfaces 11-13 are exposed from the package 4. The exposed surface 17 of the third metal contact 13 forms an extension of the terminal point 7 of the device 2.

[0053] In a further step S5, the control terminal 14 is attached to the exposed surface 17 of the package and the third metal contact 13, and thus to the terminal point 7 of the device 2. For example, the control terminal 14 can be implemented as a two-layer printed circuit board. Such a two-layer PCB may include a layer for the gate contact or the third metal contact 13 and another layer for the source / emitter Kelvin contact.

[0054] Subsequently, in further steps, module 1 can be coupled to one or more other modules 1 and / or integrated into a cooler unit 20, with a cooler attached to each side. The size of module 1 allows for direct integration with a heat sink, such as Cu or Ag sintered or alternatively dry contact. For example, such a semiconductor power package 3 may include multiple modules 1 connected in parallel to provide a predetermined current intensity.

[0055] For most applications, such as Figure 1 or Figure 2 Module 1 shown can be designed with a typical current rating of 100-1200 amps and voltage levels such as 750 V, 1.2 kV, 3.3 kV, 4.5 kV, and 5.2 kV. Module 1 can be configured for use in HVDC applications for voltage source converters (VSCs) and modular multilevel converters (MMCs) topologies. In this case, for example, Module 1 is designed with a 500 A current rating and can be used by connecting three, four, five, or six modules in parallel (e.g., ...). Figure 3 and Figure 4 As shown in the diagram, rated currents of 1500 A, 2000 A, 2500 A, and 3000 A can be obtained respectively. More modules can be connected in parallel to obtain higher currents.

[0056] Module 1 can be configured for automotive or aerospace applications, where it can be used alone, without parallel connection, or alternatively in parallel connection, depending on the required rated current. However, the typical range of rated current for each Module 1 can be the same as described above. Examples could be modules of 250 A, 500 A, or 1000 A.

[0057] As mentioned above, Figures 1 to 14 The embodiments shown or described represent exemplary embodiments of the improved semiconductor power module 1 and its manufacturing method; therefore, they do not constitute a complete list of all embodiments. For example, the actual arrangement and method may differ from the illustrated embodiments in terms of the cooler unit.

[0058] Figure Labels 1 Semiconductor Power Module 2 Semiconductor power devices 3 Semiconductor Power Package 4 Packages 41 weeks towards the edge 42 climbing ribs 5. The first side of semiconductor power devices The second side of 6 semiconductor power devices 7. Terminal Points / Gates of Semiconductor Power Devices 8 Recesses between adjacent first metal contacts 9 protrusions 10 Bottom Components 11 First metal contact 12 Second metal contact 13 Third metal contact 14 control terminals 15 Top surface of the first metal contact 16. Bottom surface of the second metal contact 17 Top surface of the third metal contact 20 Cooler Units 21. Structure of the first cooler 22 Second Cooler Structure Lateral direction of semiconductor power module A Lateral direction of B semiconductor power module Stacking direction of R semiconductor power modules st thermomechanical stress The thickness of the first metal contact element z0 Total thickness of the first metal contact element Thickness of the bottom component of z1 z2 Thickness of the protrusion / Depth of the recess

Claims

1. Semiconductor power module (1) comprising: - at least one semiconductor power device (2) having electrical contacts, - a first metal contact (11) directly coupled to a first side (5) of the semiconductor power device (2), - a second metal contact (12) directly coupled to a second side (6) of the semiconductor power device (2), the second side (6) being opposite to the first side (5) with respect to a stacking direction (R) of the semiconductor power module (1), - a control terminal (14) electrically coupled to an electrical contact (7) of the semiconductor power device (2), and - an encapsulation (4) encapsulating the semiconductor power device (2) and the first and second metal contacts (11, 12) such that the semiconductor power device (2) and the first and second metal contacts (11, 12) are embedded in the encapsulation (4), wherein respective surfaces (15, 16) of the control terminal (14) and of the first and second metal contacts (11, 12) facing outward with respect to the stacking direction (R) are exposed from the encapsulation (14).

2. Semiconductor power module (1) according to claim 1, comprising: - two or more semiconductor power devices (2), each having respective electrical contacts, - two or more first metal contacts (11), wherein at least one first metal contact (11) is directly coupled to a respective first side (5) of an associated semiconductor power device (2), - two or more second metal contacts (12), wherein at least one second metal contact (12) is directly coupled to a respective second side (6) of an associated semiconductor power device (2), the respective second side (6) being opposite to the respective first side (5) with respect to the stacking direction (R), wherein the second metal contacts (12) are arranged laterally spaced apart from each other with respect to a lateral direction (A, B) perpendicular to the stacking direction (R) at the associated second side (6) of the semiconductor power device (2), and - at least one third metal contact (13) directly coupled to a respective terminal point (7) of the semiconductor power device (2) at the second side (6) of the associated semiconductor power device (2), wherein the encapsulation (4) encapsulates the semiconductor power devices (2) and the respective first and second metal contacts (11, 12) and the third metal contacts (13) such that the semiconductor power devices (2) and the respective first and second metal contacts (11, 12) and the third metal contacts (13) are embedded in the encapsulation (4), and wherein the control terminal (14) is electrically coupled to a respective terminal point (7) of the associated semiconductor power device (2) by means of the third metallic contact (13), and respective surfaces (15, 16) of the control terminal (14), the first and second metallic contacts (11, 12) facing outwardly with respect to the stacking direction (R), and a surface (17) of the third metallic contact (13) facing outwardly with respect to the stacking direction are exposed from the encapsulant (4).

3. The semiconductor power module (1) according to claim 2, wherein The two or more first metallic contacts (11) are formed from a single piece arranged to be laterally spaced apart from each other by respective recesses (8) with respect to the lateral direction (A, B) at an associated first side (5) of the semiconductor power device (2), such that the first metallic contacts (11) are configured as respective protrusions (9) rising from a common continuous plate-like base member (10), wherein the respective protrusions (9) face the associated semiconductor power device (2).

4. The semiconductor power module (1) according to claim 3, wherein A thickness (zl) of the plate-like base (10) in the region of the respective recess (8) is at most 80% less than a total thickness (zo) of the adjacent protrusion (9) and the plate-like base (10).

5. The semiconductor power module (1) according to any of the preceding claims, wherein The control terminal (14) is electrically coupled to a respective second metallic contact (12) of the associated semiconductor power device (2).

6. The semiconductor power module (1) according to any of the preceding claims, wherein At least one of the respective first, second and third metallic contacts (11, 12, 13) is made of or comprises at least one of copper, aluminum, molybdenum and magnesium.

7. The semiconductor power module (1) according to any of the preceding claims, wherein The respective semiconductor power device (2) is formed as at least one of a metal-oxide-semiconductor field-effect transistor, a double-diffused insulated-gate transistor and an insulated-gate bipolar transistor.

8. The semiconductor power module (1) according to any of the preceding claims, wherein At least one of the respective first, second and third metallic contacts (11, 12, 13) is bonded to a respective first side (5) or second side (6) of the associated semiconductor power device (2).

9. The semiconductor power module (1) according to any of the preceding claims, wherein The encapsulant (4) is made of or comprises a polymer material of an epoxy molding compound having a filler content higher than 60% by weight.

10. The semiconductor power module (1) according to any of the preceding claims, wherein The encapsulant (4) comprises a circumferential edge (41) having a plurality of creepage ribs (42) laterally surrounding the one or more semiconductor power devices (2) and the respective first and second metallic contacts (11, 12), wherein a shape of the creepage ribs (42) is harmonized to at least one of a given voltage class, a given encapsulant material and a degree of contamination.

11. A semiconductor power package (3) comprising: - a cooler unit (20) for liquid cooling of a semiconductor power device (2), the cooler unit comprising a first cooler structure (21) and a second cooler structure (22), and - a plate-like base member (10) for mechanically supporting the semiconductor power device (2) and the cooler unit (20), wherein the plate-like base member (10) is arranged to be electrically coupled to a respective first side (5) of the semiconductor power device (2) by means of a plurality of first metallic contacts (11) and to a respective second side (6) of the semiconductor power device (2) by means of a plurality of second metallic contacts (12), wherein the first and second metallic contacts (11, 12) are electrically coupled to a respective control terminal (14) of the semiconductor power device (2) by means of a plurality of third metallic contacts (13), and wherein respective surfaces (15, 16) of the control terminal (14), the first and second metallic contacts (11, 12) facing outwardly with respect to a stacking direction (R), and a surface (17) of the third metallic contacts (13) facing outwardly with respect to the stacking direction are exposed from an encapsulant (4) of the semiconductor power package (3). - The semiconductor power module (1) according to any one of the preceding claims, wherein the respective first metal contact (11) is directly coupled to the first cooler structure (21) and the respective second metal contact (12) is directly coupled to the second cooler structure (22).

12. The semiconductor power package (3) according to claim 11, wherein The first cooling structure and / or the second cooling structure (21, 22) comprises at least one of an inlet and an outlet, and a heat pipe or a fluid channel connecting the inlet and the outlet for guiding a coolant.

13. A method for manufacturing a semiconductor power module (1) according to any one of claims 1 to 10, comprising: - providing at least one semiconductor power device (2), a first metal contact (11) and a second metal contact (12), - coupling the semiconductor power device (2) and the first metal contact (11) to each other such that the first metal contact (11) is directly coupled to a first side (5) of the semiconductor power device (2), - coupling the semiconductor power device (2) and the second metal contact (12) to each other such that the second metal contact (12) is directly coupled to an opposite second side (6) of the semiconductor power device (2) opposite to the first side (5) with respect to a stacking direction (R) of the semiconductor power module (1) - forming an encapsulation (4) such that the semiconductor power device (2) and the first and second metal contacts (11, 12) are enclosed by and embedded in the encapsulation (4), wherein respective surfaces (15, 16) of the first and second metal contacts (11, 12) facing outward with respect to the stacking direction (R) are exposed from the encapsulation (4), and - providing control terminals (14) and electrically coupling the control terminals (14) to electrical contacts (7) of the semiconductor power device (2) exposed from the encapsulation (4).

14. The method for manufacturing a semiconductor power module according to claim 13, comprising: - providing two or more semiconductor power devices (2), two or more first metal contacts (11) and two or more second metal contacts (12), - coupling respective semiconductor power devices (2) and respective first metal contacts (11) to each other such that the respective first metal contacts (11) are directly coupled to associated first sides (5) of the respective semiconductor power devices (2), - coupling the respective semiconductor power device (2) and the respective second metal contact (12) to each other such that the respective second metal contact (12) is directly coupled to a second side (6) of the respective semiconductor power device (2) which second side (6) is opposite to the first side (5) with respect to the stacking direction (R), wherein the second metal contacts (12) are arranged laterally spaced apart from each other with respect to a lateral direction (A, B) perpendicular to the stacking direction (R) of the semiconductor power module (1) at the associated second side (6) of the semiconductor power device (2), - providing at least one third metal contact (13) and directly coupling the third metal contact (13) at the second side (6) to a respective terminal point (7) of the semiconductor power device (2), - forming the encapsulation (4) such that the semiconductor power device (2) and the respective first and second metal contacts (11, 12) and the third metal contact (13) are enclosed by and embedded in the encapsulation (4), - electrically coupling the control terminal (14) to the respective terminal point (7) of the associated semiconductor power device (2) by means of the third metal contact (13) such that the control terminal (14), the respective surfaces (15, 16) of the first and second metal contacts (11, 12) facing outward with respect to the stacking direction (R) and a surface (17) of the third metal contact (13) facing outward with respect to the stacking direction are exposed from the encapsulation (4).

15. The method for manufacturing a semiconductor power module according to claim 13 or 14, wherein, The forming of the encapsulation (4) comprises: forming the encapsulation (4) by transfer and / or injection molding from a polymer material of an epoxy molding compound.

16. The method for manufacturing a semiconductor power module according to claim 15, wherein, The forming of the encapsulation (4) by molding comprises: - completely enclosing and embedding the one or more semiconductor power devices (2) and the respective first and / or second metal contacts (11, 12) in the encapsulation (4) and thereafter - exposing the respective surfaces (15, 16) of the first and second metal contacts (11, 12) facing outward with respect to the stacking direction (R) from the encapsulation (4).

Images