An upper electrode structure and plasma processing apparatus

Abstract

The application relates to the field of semiconductor equipment, and provides an upper electrode structure and a plasma processing equipment. The upper electrode structure comprises an upper electrode back plate, a spraying plate and a field uniformization structure. The upper electrode back plate is internally provided with a cooling channel. The spraying plate is oppositely arranged with the upper electrode back plate. A plurality of air injection holes are arranged on the spraying plate in a penetrating mode. The field uniformization structure comprises at least one uniform plate. The uniform plate is arranged between the upper electrode back plate and the spraying plate. A plurality of protruding structures arranged at intervals along the plate surface and a uniform gas hole penetrating the plate body are arranged on each uniform plate. A micro-channel structure is formed between adjacent protruding structures. The uniform gas hole is communicated with the micro-channel structure and the air injection hole. The gas diffusion, electric field conduction and heat transfer are guided through the protruding structure and the micro-channel structure, so that the temperature field control and the uniformization of the electric field and the gas field are completed in the upper electrode structure. The problem that the film uniformity is damaged due to the thermal deformation of the upper electrode under the high-temperature process is solved. Conditions for improving the quality of film deposition are provided.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of semiconductor equipment, in particular to an upper electrode structure and a plasma processing equipment. BACKGROUND

[0002] The design and manufacture of conventional large-area coated upper electrodes mainly focus on the uniformity of electric field and gas flow. The uniformity of temperature field mainly depends on the design of the lower electrode. Since PECVD technology itself can achieve low-temperature deposition under the assistance of plasma, the reaction temperature is generally controlled at 200-300°C. However, in some material systems, high temperature is helpful to promote the crystal phase transition of thin film materials, so high-temperature PECVD process is needed. The working temperature of the conventional lower electrode is usually about 200°C, which has little effect on the upper electrode; however, if the lower electrode is designed for high-temperature working conditions, the thermal influence on the upper electrode must be fully considered when designing the upper electrode, and the existing upper electrode structure cannot meet the needs of high temperature and the uniformity of gas field and electric field for new materials such as BN. SUMMARY

[0003] The present application aims to improve at least one technical problem in the background art.

[0004] The present application provides an upper electrode structure, which comprises an upper electrode back plate, a shower plate and a field uniformity structure.

[0005] The upper electrode back plate is internally provided with a cooling channel;

[0006] The shower plate is oppositely arranged with the upper electrode back plate, and a plurality of air injection holes are arranged through the shower plate;

[0007] The field uniformity structure comprises at least one uniformity plate, the uniformity plate is arranged between the upper electrode back plate and the shower plate, each of the uniformity plates is provided with a plurality of protruding structures arranged along the plate surface and a uniformity gas hole penetrating the plate body, a plurality of the protruding structures form a micro-channel structure, and the uniformity gas hole is communicated with the air injection hole through the micro-channel structure and the air injection hole, so as to guide the diffusion of gas, the conduction of electric field and the transfer of heat through the protruding structure and the micro-channel structure.

[0008] According to some technical solutions of the present application, the uniformity plate comprises a first uniformity plate, the first uniformity plate is arranged adjacent to the shower plate, the protruding structure comprises a first protruding part, the first protruding part is arranged on the first uniformity plate and faces one side of the shower plate, and a first micro-channel is formed between adjacent first protruding parts, the first micro-channel comprises a first transverse channel and a first oblique channel which are communicated and extend in the length direction of the first uniformity plate to the transverse direction and the oblique direction.

[0009] According to some technical solutions of the present application, the uniform plate further comprises a second uniform plate, the second uniform plate is arranged between the first uniform plate and the upper electrode back plate, the protruding part comprises a second protruding part, the second protruding part is arranged on the upper and lower surfaces of the second uniform plate and is arranged at intervals along the surfaces, and a second micro channel is formed between adjacent second protruding parts, the second micro channel comprises a second transverse channel, a second longitudinal channel and a second oblique channel which extend in the transverse direction, the longitudinal direction and the oblique direction along the length direction of the second uniform plate and are communicated.

[0010] According to some technical solutions of the present application, the interval between adjacent first protruding parts is smaller than the interval between adjacent second protruding parts.

[0011] According to some technical solutions of the present application, a plurality of the uniform gas holes on the first uniform plate form a first distribution area, a plurality of the uniform gas holes on the second uniform plate form a second distribution area, and the distribution density of the gas holes in the first distribution area is greater than that in the second distribution area.

[0012] According to some technical solutions of the present application, a plurality of the spray holes on the spray plate form a third distribution area, and the ratio of the number of uniform gas holes in the first distribution area to the number of spray holes in the third distribution area is one of 1:4, 1:8 or 1:16.

[0013] According to some technical solutions of the present application, the first uniform plate and / or the second uniform plate is detachably connected with the upper electrode back plate or the spray plate.

[0014] According to some technical solutions of the present application, the distribution shape of the cooling channel is a continuous U-shaped or grid-shaped.

[0015] According to some technical solutions of the present application, the cross section of the protruding structure is a polygonal shape.

[0016] The second aspect of the present application further provides a plasma processing device, which comprises a reaction chamber, a lower electrode and an upper electrode structure as described above, the upper electrode structure is arranged in the reaction chamber, and the lower electrode is arranged at the bottom of the reaction chamber and is arranged opposite to the upper electrode structure.

[0017] The upper electrode structure provided by the present application has at least the following beneficial effects: not only solves the problem of deformation of the upper electrode at high temperature, but also simultaneously improves the uniformity of the gas field and the electric field through the protruding structure and the micro channel structure, so that the temperature field control and the uniformization design of the electric field and the gas field are completed in the same upper electrode structure, and the uniformity of subsequent thin film deposition is improved. BRIEF DESCRIPTION OF DRAWINGS

[0018] Figure 1 The figure is a perspective view of the upper electrode structure provided by the embodiment of the present application.

[0019] Figure 2 A side view structural diagram of an upper electrode structure provided by the embodiment of the present application;

[0020] Figure 3 An internal structural diagram of an upper electrode back plate provided by the embodiment of the present application;

[0021] Figure 4 A sectional view structural diagram of an upper electrode structure provided by the embodiment of the present application;

[0022] Figure 5 A sectional view structural diagram of a uniform plate provided by the embodiment of the present application;

[0023] Figure 6 A bottom view structural diagram of a first uniform plate provided by the embodiment of the present application;

[0024] Figure 7 A structural diagram of one angle of a uniform plate provided by the embodiment of the present application;

[0025] Figure 8 A top view structural diagram of a second uniform plate provided by the embodiment of the present application.

[0026] In the drawings: 100-upper electrode back plate; 200-spraying plate; 110-cooling channel; 120-radio frequency electrode feed-in end; 130-gas injection port; 210-gas injection hole; 220-gas uniform channel; 300-protruding structure; 301-gas uniform hole; 310-first uniform plate; 320-second uniform plate; 311-first micro channel; 321-second micro channel; 312-first distribution area; 302-first protruding part; 303-second protruding part. DETAILED DESCRIPTION

[0027] The embodiments of the present application are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar notations represent the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the drawings are exemplary only, for the purpose of explaining the present application, and should not be understood as a limitation of the present application.

[0028] In the description of the present application, it should be understood that, in relation to the orientation description, for example, the orientation or position relationship indicated by up, down, front, back, left, right, etc. is based on the orientation or position relationship shown in the drawings, which is only for the purpose of facilitating the description of the present application and simplifying the description, and does not indicate or imply that the device or element referred to must have a particular orientation and be constructed, operated in a particular orientation, therefore it should not be understood as a limitation of the present application.

[0029] In the description of the present application, the words such as arrangement, installation, connection and the like should be understood in a broad sense unless otherwise explicitly limited, and the skilled in the art can determine the specific meaning of the above words in the present application in combination with the specific content of the technical solution.

[0030] The following will be described in combination with Figures 1 to 8 The embodiments of the present application are described.

[0031] CVD (Chemical Vapor Deposition) is a technology that converts gaseous precursors into solid thin films through chemical reactions and deposits them on the surface of a substrate. Since the 1960s, with the progress of semiconductor manufacturing technology, CVD equipment has gone through the stages of normal pressure, low pressure, plasma enhancement, and has developed to the current ALD (Atomic Layer Deposition) era.

[0032] PECVD (Plasma Enhanced Chemical Vapor Deposition) as an important type of CVD, its thin film preparation process involves reaction chemistry, thermodynamics, kinetics, fluid dynamics, thin film growth mechanism and reaction engineering, etc. Multiple disciplines, it belongs to a complex multi-physical field process. Because the thin film prepared by PECVD has good uniformity, repeatability, can realize large area film forming, and the step coverage ability is excellent, and the film composition and thickness are easy to control, so it becomes the most widely used CVD technology.

[0033] With the rapid development of artificial intelligence technology, some new two-dimensional thin film materials are gradually moving towards the practical stage, among which some materials such as BN (boron nitride) can be prepared by PECVD. Under the action of electromagnetic field, PECVD can use reaction gas to form plasma to deposit thin film at a relatively low temperature such as 200°C, but the thin film obtained under this condition is usually amorphous. With the increase of substrate growth temperature, the grain morphology of this kind of material will recrystallize, for example, under the condition of 600°C, a crystal thin film mainly composed of hexagonal boron nitride (h-BN) can be formed.

[0034] The upper electrode structure of the PECVD (Plasma Enhanced Chemical Vapor Deposition) equipment usually adopts the way of fixing the back plate, the gas distribution plate and the shower plate around. In this structure, the shower plate and the upper electrode back plate jointly constitute an internal hollow area, and a gas distribution cavity is arranged therebetween. After the process gas enters the upper electrode through the reaction gas inlet, it is first dispersed by the gas distribution plate, so that the gas can diffuse to all directions when entering the gas distribution cavity. The structure design of the gas distribution plate can effectively block the gas flowing from the center, and combined with its concave profile, the gas flow mode is changed from vertical flow of small caliber to inclined flow of large caliber. Subsequently, the gas is injected into the reaction chamber through the gas injection port on the shower plate, but the uniformity of the gas is still not ideal under the current structure.

[0035] In addition, the traditional shower plate performs poorly in terms of thermal conduction uniformity, and its thermal conductivity needs to be improved. Under the condition of assembly with four sides fastened, the shower plate is prone to deformation and distortion, resulting in uneven surface and uneven electric field distribution. Therefore, while optimizing the uniformity of gas distribution, the problem of thermal and electrical conductivity of the shower plate also needs to be solved comprehensively.

[0036] Based on the above, the present application provides an upper electrode structure, which comprises an upper electrode back plate 100, a shower plate 200 and a field uniformity structure;

[0037] The upper electrode back plate 100 is internally provided with a cooling channel 110. Since the upper electrode works in a vacuum sealed environment, the inlet and outlet of the cooling medium are arranged on the upper electrode back plate 100, and the cooling channel 110 is arranged in the back plate of the upper electrode. The cooling channel 110 is in communication with the inlet and outlet pipeline, so that it becomes a cold plate with uniform temperature. The cooling medium is introduced into the uniform cooling channel 110 of the upper electrode back plate 100 and circulates in the cooling channel 110, absorbing the heat transferred by the back plate and subsequent components, so that the back plate maintains a uniform temperature. Then, through the uniform plate adhered to the back plate, the cold quantity is transmitted to the shower plate 200 below, the temperature of the shower plate 200 is controlled, and the active temperature control capability of the upper electrode is increased.

[0038] The shower plate 200 is arranged opposite to the upper electrode back plate 100, a plurality of gas injection holes 210 are arranged through the shower plate 200, and a gas uniformization channel 220 is arranged on the shower plate 200, the gas uniformization channel 220 being in communication with the gas injection holes 210;

[0039] The field uniformity structure comprises at least one uniform plate, the uniform plate being arranged between the upper electrode back plate 100 and the shower plate 200, a plurality of protruding structures 300 arranged at intervals along the plate surface and a gas uniformization hole 301 penetrating the plate body being arranged on each uniform plate, a micro-channel structure being formed between the plurality of protruding structures 300, and the gas uniformization hole 301 being in communication with the gas injection hole 210 through the micro-channel structure, so as to guide the diffusion of gas, the conduction of electric field and the transmission of heat through the protruding structure 300 and the micro-channel structure.

[0040] Specifically, when at least one uniform plate is arranged, the process gas is introduced from the gas injection port 130 at the center of the upper electrode back plate 100, and then enters the uniform plate of the field uniformity structure. The gas diffuses in the micro-channel structure formed by the protruding structure 300 of the uniform plate, is further distributed through the protruding structure 300 and the gas uniformization hole 301, and finally uniformly enters the reaction chamber through the gas injection hole 210 of the shower plate 200, so as to realize the uniform transmission of the gas field. Based on the micro-channel structure of the uniform plate, the gas is processed in multiple stages through guiding, distribution and diffusion, and the gas is converted from concentrated input into distributed diffusion by the micro-channel, which effectively eliminates the limitations of local aggregation and uneven flow rate in the traditional single cavity gas uniformization, thereby ensuring the uniformity of gas flow distribution.

[0041] In terms of electric field conduction, the external radio frequency power supply outputs radio frequency energy through a matcher, and the radio frequency energy is connected to the radio frequency electrode feed-in end 120 on the upper electrode back plate 100 through a copper bar or other radio frequency transmission medium. The energy of the radio frequency power supply is transmitted to the uniform plate of the uniform field structure through the upper electrode back plate 100, and then transmitted to the spray plate 200 through the convex structure 300 of the uniform plate and the sidewall of the microchannel, so as to form a uniform electric field on the surface of the spray plate 200, thereby providing stable plasma generation conditions for the PECVD process. Among them, the center of the electrode feed-in structure on the upper electrode is the best introduction point. If the asymmetric point is used as the introduction point in the structure, the uniformity of the electric field will be aggravated, thereby causing the non-uniformity of the film coating.

[0042] In terms of temperature control, the cooling medium continuously flows into the cooling channel 110 inside the upper electrode back plate 100. After the high temperature generated by the lower electrode is radiated to the spray plate 200, the heat is rapidly conducted upward through the contact area provided by the uniform field structure and the convex structure 300 on the uniform field structure in close contact with the spray plate 200, and finally taken away by the cooling medium circulating inside the upper electrode back plate 100. The cooling channel 110 continuously absorbs the heat generated by the upper electrode and the process, thereby achieving the control of the temperature of the overall upper electrode. In this way, the convex structure 300 on the uniform plate increases the contact area with the adjacent components, thereby realizing large-area contact conduction. Compared with the traditional local contact form around the uniform gas cavity, not only the uniformity of the electric field and the stability of the film coating quality are improved, but also the heat transfer efficiency is significantly improved, the deformation of the upper electrode structure caused by high temperature is effectively reduced, and the service life of the equipment is prolonged.

[0043] Therefore, the temperature field control, the electric field and the gas field are designed in the same upper electrode structure, which solves the problem of destroying the uniformity of the film coating due to the thermal deformation of the upper electrode under high-temperature process, and provides conditions for improving the quality of thin film deposition.

[0044] In some embodiments, the uniform plate includes a first uniform plate 310, and the first uniform plate 310 is arranged adjacent to the spray plate 200. The convex structure 300 includes a first convex portion 302, and a plurality of first convex portions 302 are arranged on the first uniform plate 310 and arranged on the side of the first uniform plate 310 facing the spray plate 200. The first microchannel 311 is formed between adjacent first convex portions 302, as shown in Figure 6 The first microchannel 311 includes a first transverse channel and a first oblique channel which extend transversely and obliquely along the length direction of the first uniform plate 310 and are communicated.

[0045] Specifically, after the reaction gas enters the first uniform plate 310 through the back plate structure, it flows in the first microchannel 311 on the side of the first uniform plate 310 facing the shower plate 200. The first transverse channel and the first diagonal channel form a cross-shaped gas flow path, avoiding the gas flowing in a single direction, so as to guide the gas to diffuse around the plate surface through the first transverse channel and the first diagonal channel. After the gas is fully diffused through the first microchannel 311, it enters the area of the shower plate 200 through the uniform hole 301 of the first uniform plate 310, and then enters the reaction chamber from the gas injection hole 210, thereby ensuring that the gas flow entering the shower plate 200 is uniform. Heat is transferred from the shower plate 200 to the protruding structure 300 of the first uniform plate 310, and then quickly conducted to the sidewall of the first microchannel 311 through the protruding structure 300, and finally transferred to the cooling channel 110 of the upper electrode back plate 100; the electric field is transmitted from the back plate to the first uniform plate 310, and is uniformly conducted to the shower plate 200 through the protruding structure 300 and the sidewall of the microchannel. In this way, the protruding structure 300 is uniformly distributed through the first microchannel 311, the contact area with the shower plate 200 is increased, and the thermoelectric conduction efficiency is improved, thereby avoiding local overheating or electric field concentration.

[0046] In the large-area film coating scene, the uniform gas distribution of a single uniform plate cannot cover the back plate, and the problem of fast central gas flow and slow edge gas flow is prone to occur. In some embodiments, the uniform plate further includes a second uniform plate 320, and the second uniform plate 320 is arranged between the first uniform plate 310 and the upper electrode back plate 100. The protruding structure 300 includes a second protruding portion 303, and the second protruding portion 303 is arranged on the upper and lower surfaces of the second uniform plate 320, i.e., the upper and lower surfaces of the second uniform plate are both provided with the second protruding portion 303. The second protruding portion 303 forms a second microchannel 321 between adjacent second protruding portions, so that the second microchannel 321 includes a second transverse channel, a second longitudinal channel and a second diagonal channel extending in the length direction of the second uniform plate 320 and communicating in the transverse direction, the longitudinal direction and the diagonal direction. Optionally, the uniform plate can be a metal plate, such as an aluminum alloy material, which is not limited here.

[0047] After the reaction gas enters the second uniform plate 320, the first diffusion is realized in the relatively sparse and large channel microchannels at the upper part of the second uniform plate 320, and the gas is divided into a large area from the central concentrated flow along the transverse, longitudinal and oblique channels. Then, the gas enters the second uniform plate 320 lower part microchannels through the second uniform plate 320 uniform gas holes 301 to realize the second diffusion. Subsequently, the gas enters the first uniform plate 310 through the second uniform plate 320 uniform gas holes 301 to realize the third diffusion in the first microchannels 311 of the first uniform plate 310 which are more dense and have smaller channels. Finally, the gas enters the reaction chamber through the spray plate 200 gas holes 210, thereby improving the uniformity of the gas distribution in the plate body and ensuring that the gas can cover the spray plate 200 after step-by-step diffusion. Similarly, the transmission of electric field and heat is also step-by-step homogenized through the two-stage structure. The protruding structure 300 of each stage uniform plate participates in thermoelectric conduction, thereby increasing the overall conduction area and realizing efficient transmission of heat and electric field.

[0048] Optionally, the spacing between adjacent first protrusions 302 is smaller than the spacing between adjacent second protrusions 303. In this way, after the gas enters the second uniform plate 320, the density of the second protrusions 303 arranged at intervals on the second uniform plate 320 is low, the spacing between adjacent second protrusions 303 is large, and the second microchannel space is wide, so that the gas can quickly realize large-scale diffusion. Subsequently, the gas enters the first uniform plate 310, the density of the first protrusions 302 is high, and the spacing between adjacent first protrusions 302 is small, so that the first microchannels are narrow, and the gas is subdivided and diffused in the narrow channels, ensuring that each part of the gas can be evenly divided to the surface of the spray plate 200.

[0049] In some embodiments, the plurality of uniform gas holes 301 on the first uniform plate 310 form a first distribution area 312, and the first distribution area has a higher density of uniform gas holes. The plurality of uniform gas holes 301 on the second uniform plate 320 form a second distribution area, and the distribution density of the gas holes in the first distribution area 312 is greater than that in the second distribution area, that is, the first distribution area is more dense and uniform. After the reaction gas enters the second uniform plate 320 with low gas hole density, each uniform gas hole 301 bears a large gas flow, quickly disperses the gas to each area of the second uniform plate 320, and then the gas enters the first uniform plate 310 with high gas hole density, the gas is further subdivided into more uniform gas holes 301, and the gas is dispersed at multiple points in the transmission process to avoid being concentrated in a few areas, thereby realizing uniform conduction of the gas. Finally, the gas enters the spray plate 200 to ensure that the flow of each gas hole 210 of the spray plate 200 is uniform.

[0050] In some embodiments, the plurality of air injection holes 210 on the shower plate 200 form a third distribution area, and the ratio of the number of air distribution holes in the first distribution area 312 to the number of air injection holes in the third distribution area is one of 1:4, 1:8, or 1:16. The hole positions and number of the lowermost shower plate are fixed, and the number of holes on the corresponding air distribution plate can be achieved by replacing different air distribution plates, so that one air distribution hole on the air distribution plate corresponds to four holes on the shower plate, or eight holes or sixteen holes. In actual configuration, the ratio can be set according to the requirements of different thin film preparation processes for gas flow and field uniformity, so that the plurality of air injection holes 210 on the shower plate 200 corresponding to one air distribution hole 301 form a multi-point dispersed conduction path, avoiding the concentration of gas flow in a single air injection hole 210 area. In addition, the hole positions of the air distribution plate can also be adjusted to have low density in the middle and high density on the edge, so as to increase the strength of the edge gas distribution, thereby providing conditions for increasing the gas field uniformity of the overall electrode structure.

[0051] In some embodiments, the first air distribution plate 310 and the second air distribution plate 320 are detachably connected to the upper electrode back plate 100 or the shower plate 200. When assembling, the second air distribution plate 320 is fixed below the upper electrode back plate 100 by means of detachable connectors such as bolts and buckles, and then the first air distribution plate 310 is fixed below the second air distribution plate 320 by means of connectors, and finally the shower plate 200 is fixed below the first air distribution plate 310, completing the assembly of the upper electrode structure. When it is necessary to adjust the air distribution effect, loosen the connectors, remove the original air distribution plate structure, replace it with an air distribution plate with different hole density and protrusion spacing, and then tighten the connectors again. When the air distribution plate is worn or damaged, the damaged part can be replaced separately without replacing the entire upper electrode structure, thereby eliminating the need to design a special upper electrode for each process, and only the air distribution plate on the uniform field structure needs to be replaced.

[0052] Thus, by replacing the uniform field structure, the needs of various thin film preparation processes are met, and the versatility of the equipment is improved. When the air distribution plate is damaged, the entire device does not need to be replaced, reducing the downtime of the equipment.

[0053] In some embodiments, the distribution shape of the cooling channel 110 is continuous U-shaped or grid-shaped, which is used for uniform cooling of the shower plate 200. In actual use, the upper electrode with a small back plate area can select a U-shaped distribution. After the cooling medium, such as cooling water, enters the channel inlet, it continuously flows along the continuous U-shaped pipeline, sequentially passes through each area of the back plate 100 of the upper electrode, fully absorbs the heat at different positions of the back plate, and finally flows out of the outlet, thereby improving the heat exchange efficiency. The upper electrode with a large back plate area can adopt a grid-shaped distribution to prevent local overheating caused by uneven distribution of the channel and to ensure the cooling effect of each area of the back plate. In addition, other distribution forms can also be selected according to the actual size of the upper electrode and the process temperature requirement, as long as the temperature stability of the upper electrode under high-temperature PECVD is ensured.

[0054] In some embodiments, the cross section of the protruding structure 300 is polygonal, so that the structure of the microchannel is generally formed by transverse or longitudinal channels combined with diagonal channels, that is, the side walls of the polygonal protruding structure 300 form transverse, longitudinal or diagonal intersecting channels. The advantage of such distribution is that the protruding blocks generally form symmetrical structures with edges in addition to the channel structure, which positively affects the uniform distribution of the gas, and at the same time, the resistance to the gas is relatively low. The cross section of the protruding structure 300 can be triangular, quadrangular or more polygonal.

[0055] Optionally, the polygonal structure is a quadrangular structure, that is, a whole four-prism structure is formed, which forms a microchannel according to the transverse communication and diagonal communication. The four side walls of the four-prism are all inclined surfaces. The gas flow is dispersed in multiple directions along the side walls, so that the gas flow is divided to the four corners along the side walls of the four-prism, and the radio frequency energy can be transmitted through the four side walls at the same time, thereby avoiding the concentration of the electric field at a single contact point. At the same time, the multiple side walls of the polygonal protrusion increase the contact area with the adjacent components, and the heat can be quickly transmitted through the multiple side walls. The uniformly distributed four-prisms effectively and uniformly contact the shower plate, which can increase the contact area and bring more uniform effect to the transmission of the electric field and the temperature field.

[0056] The second aspect of the present application also provides a plasma processing device, which comprises a reaction chamber, a lower electrode and an upper electrode structure as above, the upper electrode structure is arranged in the reaction chamber, the lower electrode is arranged at the bottom of the reaction chamber and opposite to the upper electrode structure, the plasma processing device has the technical advantages of the upper electrode structure described in the above embodiments. Therefore, by integrating the temperature field control function in the upper electrode, the problem of no temperature control and easy deformation at high temperature of the traditional upper electrode is solved, and the uniformity of the gas field and the electric field is further optimized, meeting the demand of large-area film coating for comprehensive uniformity. In addition, through the two uniform plates and the three-level uniform gas structure, the gas is converted from the centralized center feeding mode to the layered and hierarchical uniformization mode, and the formation mode of the microchannel and the structure form of the side wall play a more uniform effect in improving the flow and dispersion of the gas.

[0057] In addition, certain terms have been used in this specification to describe embodiments of the application. For example, "one embodiment", "an embodiment" and / or "some embodiments" means that a particular feature, structure or characteristic described in connection with the embodiment is included in at least one embodiment of the application. The appearances of the phrase "in one embodiment" or "in some embodiments" in various places in the specification are not necessarily all referring to the same embodiment.

[0058] It is emphasized that the particular features, structures or characteristics described in this specification are not necessarily all included in one or more embodiments of the application. Therefore, it is to be understood that two or more references to "an embodiment" or "one embodiment" or "an alternative embodiment" in various places in the specification are not necessarily all referring to the same embodiment. Additionally, the particular features, structures or characteristics can be combined in one or more embodiments of the application.

[0059] Finally, it should be understood that the embodiments of the application disclosed herein are illustrative of the principles of the application. Other modifications that can be applied depend on the principles described in the present specification. Therefore, the embodiments disclosed in the present specification are merely examples and not limiting. Those skilled in the art can take alternative configurations according to the embodiments in the present specification to implement the application in the present specification. Therefore, the embodiments of the present specification are not limited to the embodiments precisely described in the application.

Claims

1. An upper electrode structure, characterized in that: include: The upper electrode back plate (100) has a cooling channel (110) inside. A spray plate (200) is disposed opposite to the upper electrode back plate (100), and a plurality of air jet holes (210) are provided through the spray plate (200). The uniform field structure includes at least one uniform plate disposed between the upper electrode back plate (100) and the spray plate (200). Each uniform plate is provided with a plurality of protrusions (300) arranged at intervals along the plate surface and air distribution holes (301) penetrating the plate body. Microchannels are formed between adjacent protrusions (300). The air distribution holes (301) are connected to the jet holes (210) through the microchannels to guide gas diffusion, electric field conduction and heat transfer through the protrusions (300) and the microchannels. The uniform plate includes a first uniform plate (310), which is disposed adjacent to the spray plate (200). The protrusion structure (300) includes a first protrusion (302), which is disposed on the first uniform plate (310) and faces the spray plate (200). A first microchannel (311) is formed between adjacent first protrusions. The first microchannel (311) includes a first transverse channel and a first oblique channel that extend laterally and obliquely along the length direction of the first uniform plate (310) and are connected. The uniform plate further includes a second uniform plate (320), which is disposed between the first uniform plate (310) and the upper electrode back plate (100). The protrusion structure (300) includes a second protrusion (303), which is disposed on the upper and lower surfaces of the second uniform plate (320). A second microchannel (321) is formed between adjacent second protrusions. The second microchannel (321) includes a second transverse channel, a second longitudinal channel, and a second oblique channel that extend laterally, longitudinally, and obliquely along the length direction of the second uniform plate (320) and are connected.

2. The upper electrode structure according to claim 1, characterized in that: The distance between adjacent first protrusions is less than the distance between adjacent second protrusions.

3. The upper electrode structure according to claim 1, characterized in that: The first uniform plate (310) has a plurality of air-equalizing holes (301) forming a first distribution area (312), and the second uniform plate (320) has a plurality of air-equalizing holes (301) forming a second distribution area. The air-equalizing distribution density of the first distribution area (312) is greater than that of the second distribution area.

4. The upper electrode structure according to claim 3, characterized in that: The spray plate (200) has a plurality of air jet holes (210) forming a third distribution area, and the ratio of the number of air jet holes in the first distribution area (312) to the number of air jet holes in the third distribution area is one of 1:4, 1:8 or 1:

16.

5. The upper electrode structure according to claim 1, characterized in that: The first uniform plate (310) and / or the second uniform plate (320) are detachably connected to the upper electrode back plate (100) or the spray plate (200).

6. The upper electrode structure according to claim 1, characterized in that: The cooling channels (110) are distributed in a continuous U-shape or grid shape.

7. The upper electrode structure according to claim 1, characterized in that: The cross-section of the protruding structure (300) is polygonal.

8. A plasma processing apparatus, characterized in that: It includes a reaction chamber, a lower electrode, and an upper electrode structure as described in any one of claims 1-7, wherein the upper electrode structure is disposed within the reaction chamber, and the lower electrode is disposed at the bottom of the reaction chamber and is disposed opposite to the upper electrode structure.

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