An annealing apparatus and annealing method for a crystal

By using a liftable edge insulation sleeve and a central insulation column in the crystal annealing apparatus, the problem of uneven temperature during crystal annealing in the prior art is solved, achieving efficient temperature control and improved crystal quality, and significantly shortening the annealing time.

CN121538738BActive Publication Date: 2026-04-24BEIJING LATTICE SEMICONDUCTOR CO LTD
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Patent Information

Application Number
CN202610062809.X
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2026-01-19
Publication Date
2026-04-24
Estimated Expiration
2046-01-19

AI Technical Summary

Technical Problem

Existing crystal annealing equipment and methods cannot simultaneously meet the different requirements of thermal field configuration during the three processes of crystal heating, isothermal control, and cooling, resulting in uneven internal temperature of the crystal, which affects the annealing effect and increases production costs and time.

Method used

The design employs a liftable edge insulation sleeve and a liftable central insulation column. By controlling the thermal field configuration around the crystal in the annealing crucible in situ, uniform temperature distribution is achieved at each stage. This includes accelerating heat flow during the heating stage, suppressing heat dissipation during the isothermal stage, controlling the heat dissipation path during the cooling stage, and dynamically adjusting the insulation state of the crystal.

Benefits of technology

This achieves uniformity in crystal temperature distribution, eliminates thermal stress, improves annealing efficiency and crystal quality, shortens annealing time, and enhances the overall cost-effectiveness of silicon carbide single crystal substrates.

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Abstract

The application relates to an annealing device and method of crystals, and belongs to the technical field of crystal production. The annealing device comprises: an annealing crucible for placing a plurality of crystals to be annealed, a graphite felt is coaxially arranged at the bottom of the annealing crucible, the plurality of crystals are coaxially placed on the graphite felt from bottom to top, and graphite blocks are arranged between adjacent crystals; a heat preservation layer arranged outside the annealing crucible; an induction coil for heating the annealing crucible; a liftable edge heat preservation sleeve coaxially arranged with the annealing crucible, which can extend into the interior of the annealing crucible to heat preserve the edges of the crystals; and a liftable center heat preservation column coaxially arranged with the annealing crucible, which can extend into the interior of the annealing crucible to heat preserve the center area of the crystals. The device and method can effectively realize the uniform temperature distribution of the crystals in each stage of the annealing process, greatly shorten the annealing time, improve the annealing efficiency and the quality of the crystals after annealing.
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