High-temperature injection control system applied to SiC ion implanter

Abstract

The invention discloses a high-temperature injection control system applied to a SiC ion implanter. The high-temperature injection control system comprises a high-temperature target disc heating system and a preheating system, the heating system comprises a first industrial personal computer, a first ADIO controller, a second ADIO controller, an adsorption power supply, a heating power supply, a high-temperature target table and a temperature sensor; the first industrial personal computer is connected with the first ADIO controller and the second ADIO controller; the first ADIO controller is connected with a heating power supply; the heating power supply is connected to the high-temperature target table; the second ADIO controller is connected with the adsorption power supply; the adsorption power supply is connected to the high-temperature target table; the plurality of temperature sensors are connected with the heating power supply; a second industrial personal computer in the preheating system is connected with a third ADIO controller; the third ADIO controller is connected with the high-temperature power distribution cabinet; the high-temperature power distribution cabinet is connected with the high-temperature preheating cavity; and the temperature sensor is mounted in the high-temperature preheating cavity. According to the invention, stable and uniform ion implantation of the SiC wafer under a high-temperature condition can be realized.

Description

Technical Field

[0001] This invention relates primarily to the field of semiconductor technology, and more specifically to a high-temperature implantation control system for SiC ion implanters. Background Technology

[0002] Silicon carbide (SiC) is a representative of third-generation wide-bandgap semiconductors, possessing superior properties such as high frequency, high power, high temperature resistance, and radiation resistance. It can overcome the bottlenecks of traditional semiconductor technology and performance, becoming a strategically important advanced electronic material to replace silicon-based devices in applications requiring high efficiency, high power density, and high reliability. SiC devices have lower on-state resistance, faster switching speeds, higher operating temperatures, stronger blocking voltages, and greater radiation resistance, effectively improving system efficiency, reducing energy consumption, decreasing system size and weight, and enhancing system reliability. Compared to Si-based power devices, SiC devices can increase energy density by 5 times and reduce energy conversion losses by 80%. They are adaptable to harsh conditions such as high voltage, high temperature, and strong radiation, playing a crucial role in resisting extreme environments and significantly reducing energy consumption and device size in numerous military electronic systems used in ships, aircraft, and intelligent weapon electromagnetic railguns. SiC is a core foundation for the development and practical application of technologies such as electric drives for large-scale weaponry and high-performance aerospace power supplies, and a core component driving the further development of strategic emerging industries such as new energy, ultra-high voltage power transmission, and rail transportation.

[0003] With the development of semiconductor technology and the improvement of chip design performance, the demand for special-design chips has increased, requiring doping at specific locations in specific devices. Currently, ion implantation can be divided into two types: room-temperature implantation machines and high-temperature wafer implantation machines. Room-temperature implantation machines have no temperature control system; the ion beam is directly implanted into the wafer. Due to the relatively high ion beam velocity, heat is generated on the wafer upon contact with the ions, increasing its temperature. After ion implantation, the ions can diffuse freely and distribute evenly throughout the wafer due to the existing temperature. This implantation method is relatively mature in China. High-temperature implantation equipment adds a heating system to the room-temperature equipment. It first heats the wafer to a certain temperature before ion implantation. The advantages of this process are that the wafer temperature is higher, the ions inside the implanted wafer have strong activity and strong free diffusion ability, and the ions are more evenly distributed inside the wafer. This implantation method has high requirements for components. The components in contact with the wafer must be made of high-temperature resistant materials, and the cooling water cooling capacity must meet the cooling rate to increase the effective service life of the equipment. This technology is compatible with SiC wafer implantation process. There is a large market demand for high-temperature implantation control systems, and the semiconductor market urgently needs to break through the high-temperature implantation control system technology.

[0004] SiC device manufacturing processes are compatible with Si device processes to some extent. However, due to the high melting point, high bond energy, and high density of SiC materials, some key processing techniques require ultra-high temperature and high energy processing to meet device design requirements, necessitating specialized equipment. The unique characteristics of SiC wafers necessitate specific element doping, making alkaline (AL) implantation a suitable option. Since Al compounds are in solid form, solid-state sources are typically used. Implantation of SiC wafers at high temperatures results in high ion activity, excellent diffusion, and higher uniformity. This controlled process fills a gap in ion implantation technology, as current ion implanters cannot meet the diverse market demands for ion implantation processes. Summary of the Invention

[0005] To address the technical problems existing in the prior art, the present invention provides a high-temperature implantation control system for SiC ion implanters that enables stable and uniform ion implantation of SiC wafers under high-temperature conditions.

[0006] To solve the above-mentioned technical problems, the technical solution proposed by this invention is as follows: A high-temperature implantation control system for a SiC ion implanter includes a high-temperature target heating system and a preheating system; The high-temperature target heating system includes a first industrial computer, a first ADIO controller, a second ADIO controller, an adsorption power supply, a heating power supply, a high-temperature target platform, and multiple temperature sensors. The first industrial computer is connected to both the first ADIO controller and the second ADIO controller. The first ADIO controller is connected to the heating power supply; the heating power supply is connected to the high-temperature target stage; The second ADIO controller is connected to the adsorption power supply; the adsorption power supply is connected to the high-temperature target stage; the adsorption power supply is used to output multiple AC currents to fix the wafer by electrostatic adsorption and to achieve wafer heating. Multiple temperature sensors are connected to the heating power supply for real-time acquisition of the inner and outer ring temperatures of the target disk; The preheating system includes a second industrial control computer, a third ADIO controller, a high-temperature power distribution cabinet, a high-temperature preheating chamber, and temperature sensors; The second industrial computer is connected to the third ADIO controller; the third ADIO controller is connected to the high-temperature power distribution cabinet; the high-temperature power distribution cabinet is connected to the high-temperature preheating cavity; the temperature sensor is installed inside the high-temperature preheating cavity and connected to the third ADIO controller or the high-temperature power distribution cabinet to monitor the wafer temperature.

[0007] As a further improvement to the above technical solution: The heating power supply includes a temperature transmitter, a temperature controller, a temperature limit controller, an over-temperature circuit breaker, and a switching power supply. The temperature transmitter is used to collect the temperature of the inner and outer rings of the target disk; The temperature controller is used to process temperature data and send it to the industrial computer through the control port to realize temperature software interlocking. The temperature limit controller and over-temperature circuit breaker are used for hardware interlocking, and the power output is automatically cut off when the temperature exceeds the set value.

[0008] The high-temperature target platform includes a high-temperature target plate, an air-bearing shaft, a target platform fixture, and a temperature sensor. The high-temperature target disk is fixed to the target stage fixture and is used to adsorb and heat the wafer; The air-bearing shaft connects the target plate heating cable and the target plate temperature acquisition cable, and is used to transmit power and signals; The temperature sensor includes an inner ring temperature sensor and an outer ring temperature sensor, which are connected to the heating power supply via a temperature acquisition cable.

[0009] The high-temperature power distribution cabinet includes an emergency stop button, a main circuit breaker knob, a power distribution control port, a power input port, and a power output port. The emergency stop button is used to cut off the power output of the power distribution cabinet in an emergency. The main circuit breaker knob is used to activate the power supply function of the high-temperature power distribution cabinet. The power distribution control port is connected to the ADIO controller for signal communication with the host computer. The power input port is used to receive plant power input. The power output port is connected to the high-temperature preheating chamber via a power cable to provide power to the preheating chamber.

[0010] The high-temperature preheating chamber includes a light bulb, a wafer heating support frame, a wafer transfer port, a temperature sensor, and a motion motor; The light bulb is connected to the high-temperature distribution cabinet via a light bulb power supply cable, and is used to generate heat to heat the wafer; The wafer heating support frame is used to support the wafer and is driven to move up and down by a motion motor; The wafer transfer port is used to connect to the entire machine cavity to create a vacuum condition; The temperature sensor is connected to the ADIO controller or high-temperature power distribution cabinet via a sensor lead port for real-time monitoring of wafer temperature.

[0011] The high-temperature target heating system and the preheating system share the same industrial control computer, or each uses an independent industrial control computer; the industrial control computer is equipped with dual-loop fiber optic communication, including main loop communication and secondary loop communication, to prevent single-loop communication failures from affecting system operation.

[0012] The high-temperature target heating system includes multiple temperature sensors, including a first outer ring temperature sensor, a second outer ring temperature sensor, a first inner ring temperature sensor, and a second inner ring temperature sensor, which are respectively arranged in the inner and outer rings of the target disk to collect temperature data and realize hardware and software temperature interlocking.

[0013] The temperature sensors in the preheating system include a first temperature sensor and a second temperature sensor. The first temperature sensor is connected to the high-temperature power distribution cabinet for hardware interlocking; The second temperature sensor is connected to the ADIO controller for software interlocking; When the temperature exceeds the set value, the interlocking system automatically shuts down the high-temperature distribution cabinet or disconnects the circuit breaker.

[0014] It also includes wafer transfer components, including a left wafer library, a right wafer library, an orientation stage, a left robot arm, and a right robot arm; the left robot arm is used to transfer the wafer from the left wafer library to the orientation stage, then from the orientation stage to the preheating cavity, and finally from the preheating cavity to the high-temperature target stage; the right robot arm is used to transfer the wafer from the high-temperature target stage to the right wafer library; the orientation stage is used to adjust the wafer injection angle.

[0015] Compared with the prior art, the advantages of the present invention are as follows: This invention effectively addresses the technological gap in existing ion implanters that cannot achieve uniform and precise doping under high-temperature conditions by integrating a high-temperature target heating system and a preheating system. The system achieves stable and uniform ion implantation of SiC wafers at high temperatures (up to 1000℃). The high-temperature target heating system employs multiple temperature sensors to monitor the inner and outer ring temperatures in real time, combined with closed-loop control of the heating power supply, ensuring wafer temperature accuracy within ±1℃, significantly improving the uniformity and activation efficiency of ion implantation. Secondly, the system innovatively introduces a preheating chamber module, using bulb heating to preheat the wafer to a set temperature (e.g., 70% of the target temperature) before implantation, drastically shortening the wafer's heating time on the target, increasing overall implantation efficiency by approximately 30%, and reducing the risk of back-side scratches due to thermal expansion.

[0016] The system of this invention has a comprehensive hardware and software dual interlocking protection mechanism. When the temperature exceeds the set threshold, the system can quickly cut off the power through hardware measures such as temperature limit controllers and over-temperature circuit breakers, as well as remote commands from the industrial control computer, to ensure the safety of the equipment and wafers and prevent over-temperature damage.

[0017] The system of this invention adopts a modular design, can be installed in parallel with the ambient temperature machine and operate independently, which facilitates maintenance and industrialization. The system ensures control reliability through dual-loop fiber optic communication, and the remote power distribution cabinet supports high-power output, meeting the stringent power and control requirements of the high-temperature injection process. Attached Figure Description

[0018] Figure 1 This is a schematic diagram of the target disk control principle of the high-temperature injection system in an embodiment of the present invention.

[0019] Figure 2 This is a schematic diagram of the preheating control principle of the high-temperature injection system in an embodiment of the present invention.

[0020] Figure 3 This is a schematic diagram of the target platform module of the present invention in a specific application.

[0021] Figure 4 This is a schematic diagram of the preheating module of the present invention in a specific application.

[0022] Figure 5 This is a front view of the remote power distribution cabinet module of the present invention in a specific application.

[0023] Figure 6 This is a top view of the remote power distribution cabinet module of the present invention in a specific application.

[0024] Figure 7 This is a side view of the remote power distribution cabinet module of the present invention in a specific application.

[0025] Figure 8 This is a schematic diagram of the component layout of the heating power supply module of the present invention in a specific application.

[0026] Figure 9 This is a schematic diagram of the front panel of the heating power supply module of the present invention in a specific application.

[0027] Figure 10 This is a schematic diagram of the rear panel of the heating power supply module of the present invention in a specific application.

[0028] Figure 11 This is a schematic diagram of the wafer transfer of the present invention in a specific application.

[0029] Figure 12 This is a flowchart of the high-temperature injection system process of the present invention in a specific application.

[0030] Legend: 1. First industrial computer; 2. Second ADIO controller; 3. Adsorption power supply; 4. First outer ring temperature sensor; 5. High-temperature target stage; 6. First inner ring temperature sensor; 7. Second inner ring temperature sensor; 8. Second outer ring temperature sensor; 9. Heating power supply; 10. First ADIO controller; 101. First temperature transmitter; 102. Second temperature transmitter; 103. First temperature controller; 104. First temperature limit controller; 105. Second temperature controller; 106. Switching power supply; 107. Second temperature limit controller; 108. Current transformer; 109. First power supply fixing handle; 110. First temperature controller setting surface. 111. Second temperature controller setting panel; 112. Control signal test port; 113. Rocker switch; 114. Second power supply fixing handle; 115. First over-temperature circuit breaker; 116. Second over-temperature circuit breaker; 117. Cooling fan; 118. Power output port; 119. Control port; 120. First temperature acquisition port; 121. Second temperature acquisition port; 122. Power supply input port; 123. Power ground terminal; 201. Target plate heating cable; 202. Target plate temperature acquisition cable; 203. Power supply adapter; 204. First target platform fixing component; 205. Outer ring temperature sensor; 206. High temperature target plate; 207. Second target stage fixture; 208. Inner ring temperature sensor; 210. Air bearing shaft; 21. Second industrial computer; 22. Third ADI controller; 23. High-temperature power distribution cabinet; 24. High-temperature preheating chamber; 25. First temperature sensor; 26. Second temperature sensor; 301. Emergency stop button; 302. Power distribution cabinet indicator light; 303. Power distribution cabinet main circuit breaker knob; 304. Mechanical door lock; 305. First power distribution cabinet mounting bracket; 306. Second power distribution cabinet mounting bracket; 307. Power distribution control port; 308. Power distribution cabinet emergency stop signal interface; 309. Power distribution cabinet power output port; 310. Power distribution cabinet power input port; 311. Fourth ADI controller. 312. Fifth ADIO Controller; 313. First Backup Port; 314. Second Backup Port; 401. Left Chip Library; 402. Right Chip Library; 403. Right Robotic Arm; 404. Orientation Stage; 405. Left Robotic Arm; 406. Preheating Chamber; 501. Heavy-Duty Lamp Power Supply; 502. Base Protective Housing; 503. Lamp Power Supply Cable; 504. Lamp; 505. Wafer Transfer Port; 506. Wafer Heating Support; 507. Temperature Sensor; 508. Sensor Lead Port; 509. Wafer Motion Support; 510. Motion Motor; 511. Lead Screw Front End; 512. Lead Screw Rear End; 513. Vacuum Bellows. Detailed Implementation

[0031] The present invention will be further described below with reference to the accompanying drawings and specific embodiments.

[0032] like Figure 1 As shown, the high-temperature implantation control system for SiC ion implanters provided in this embodiment of the invention includes a high-temperature target heating system and a preheating system; The high-temperature target heating system includes a first industrial computer 1, a second ADIO controller 2, an adsorption power supply 3, a first outer ring temperature sensor 4, a high-temperature target stage 5, a first inner ring temperature sensor 6, a second inner ring temperature sensor 7, a second outer ring temperature sensor 8, a heating power supply 9, and a first ADIO controller 10. The adsorption power supply 3 is used for electrostatic adsorption to fix the wafer, ensuring that the wafer does not move during the heating process. The high-temperature target stage 5 is used to install the high-temperature target heating components, and the heating power supply 9 is used to heat the target, thus achieving the wafer heating effect. The first industrial computer 1 is equipped with a system. The software is configured to set and collect temperatures from 0 to 1000℃. The fiber optic communication is a dual-loop system, consisting of a main loop and a secondary loop. This is to prevent a failure in one fiber optic communication from affecting the normal operation of the system. The first industrial computer 1 is connected to the first ADIO controller 10 and the second ADIO controller 2 via fiber optic cables. The functions of the first ADIO controller 10 are: 1. To remotely control the power output of the adsorption power supply and collect the status signals of the adsorption power supply; 2. To connect to the internal master station of the first industrial control computer 1 via fiber optic communication. The second ADIO controller 2 is connected to the adsorption power supply 3 via a control cable. The functions of the adsorption power supply 3 are: 1. The adsorption power supply 3 has six outputs, dividing the target disk into 6 blocks, with AC output, frequency 32HZ, and output voltage 0-1000V, used to fix the wafer by electrostatic adsorption, to achieve the wafer heating effect, and to ensure that the wafer does not move during the heating process; 2. The adsorption power supply 3 can be remotely turned on and off, and can monitor the power supply enable status in real time. The first ADIO controller 10 is connected to the heating power supply 9 via a control cable. The heating power supply 9 has the following functions: 1. Power output module heats the high-temperature target plate; 2. Collects and processes the measured temperature from the temperature sensor; 3. Controls and adjusts the target plate system temperature in real time; 4. System over-temperature hardware interlock protects the equipment. The adsorption power supply 3 is connected to the high-temperature target stage 5 via an output cable. The functions of the high-temperature target stage are: 1. to install the heating components of the high-temperature target plate; 2. to adjust the beam receiving angle of the high-temperature target plate; 3. to add protective graphite to the outside of the high-temperature target stage to absorb sputtered ions and protect the components. The first outer ring temperature sensor 4, the second outer ring temperature sensor 8, the first inner ring temperature sensor 6, and the first inner ring temperature sensor 7 are all connected to the heating power supply via temperature acquisition cables. Their functions are: 1. to acquire the inner and outer ring temperatures of the target plate in real time; 2. to be used for hardware and software temperature interlocking.

[0033] like Figure 2As shown, the high-temperature target disk preheating system includes a second industrial control computer 21, a third ADIO controller 22, a high-temperature power distribution cabinet 23, a high-temperature preheating cavity 24, a first temperature sensor 25, and a second temperature sensor 26; wherein the high-temperature power distribution cabinet 23 is used to provide power to the preheating cavity; the high-temperature preheating cavity 24 is used to heat the wafer, reduce the target disk heating time, and improve the overall heating efficiency.

[0034] The second industrial control computer 21, along with the first industrial control computer 1 of the high-temperature target heating system, is used to install the system. Its software is configured with a 0-1000℃ temperature setting and acquisition capability. The fiber optic communication is a dual-loop system, consisting of a main loop and a secondary loop, designed to prevent system malfunctions from affecting normal operation. The second industrial control computer 21 is connected to the third ADIO controller 22 via fiber optic cables. The third ADIO controller 22's functions include: 1. Remotely controlling the power output of the high-temperature power distribution cabinet and collecting electrical signals from the cabinet; 2. Connecting to the internal master station of the second industrial control computer 21 via fiber optic communication; 3. Real-time acquisition of the preheating chamber temperature sensor temperature for software interlocking. The second ADIO controller 22 is connected to the high-temperature distribution cabinet 23 via control cables. The high-temperature distribution cabinet 23 has a three-phase five-wire input power supply, including three live wires, one neutral wire, and one ground wire. The input phase voltage is AC 120V, the input line voltage is AC 208V, the voltage accuracy is ±10%, and the rated output power is 20kVA. Its functions are: 1. Plant power supply access point, equipped with an emergency stop control button for real-time input / output control, protecting equipment and personnel safety; 2. Providing power to the ADIO controller; 3. Providing power to the preheating chamber; 4. Over-temperature protection hardware interlock. The high-temperature power distribution cabinet 23 is connected to the high-temperature preheating chamber 24 via a power cable. The functions of the high-temperature preheating chamber 24 are: 1. to provide space for heating the wafer; 2. to provide heat for heating the wafer; 3. to preheat the wafer before injection, thereby improving the overall heating efficiency. The high-temperature preheating chamber 24 is equipped with a first temperature sensor 25 connected to the high-temperature power distribution cabinet 23 to monitor the wafer temperature in real time and for hardware interlocking. The high-temperature preheating chamber 24 is equipped with a second temperature sensor 26 connected to the third ADIO controller 22 to monitor the wafer temperature in real time and for software interlocking.

[0035] like Figure 3 As shown, the high-temperature target stage 5 includes a target plate heating cable 201, a target plate temperature acquisition cable 202, a power supply adapter 203, a first target stage fixing component 204, an outer ring temperature sensor 205, a high-temperature target plate 206, a second target stage fixing component 207, an inner ring temperature sensor 208, and an air bearing shaft 210. The target plate heating cable 201 and the target plate temperature acquisition cable 202 are connected to the outer ring temperature sensor 205 via the air bearing shaft 210. The high-temperature target plate 206 is used for temperature acquisition and high-temperature target plate power input, thereby achieving the temperature rise of the high-temperature target plate. The second target stage fixture 207 is fixed to the first target stage fixture 204 by pins. The high-temperature target plate 206 is fixed to the upper end of the second target stage fixture 207 by screws to adsorb and heat the wafer. It is divided into two parts: a vacuum part and an atmospheric part. The atmospheric part includes the target plate heating cable 201, the target plate temperature acquisition cable 202, and the air bearing shaft 210. The vacuum part includes the power supply adapter 203, the first target stage fixture 204, the outer ring temperature sensor 205, the high-temperature target plate 206, the second target stage fixture 207, and the inner ring temperature sensor 208.

[0036] like Figures 5-7 As shown, the high-temperature distribution cabinet 23 includes an emergency stop button 301, a distribution cabinet indicator light 302, a distribution cabinet main circuit breaker knob 303, a mechanical door lock 304, a first distribution cabinet mounting bracket 305, a second distribution cabinet mounting bracket 306, a power distribution control port 307, a distribution cabinet emergency stop signal interface 308, a distribution cabinet power supply output port 309, a distribution cabinet power supply input port 310, a fourth ADIO controller 311, a fifth ADIO controller 312, a first backup port 313, and a second backup port 314. The emergency stop button 301 is installed on the high-temperature distribution cabinet panel and is used to cut off the power supply output of the distribution cabinet in emergency situations; the distribution cabinet main circuit breaker knob 303 and the mechanical door lock 304 are installed on the high-temperature distribution cabinet panel and are used to activate the power supply function of the high-temperature distribution cabinet. Emergency stop button 301, power distribution cabinet indicator light 302, power distribution cabinet main circuit breaker knob 303, mechanical door lock 304, first power distribution cabinet mounting bracket 305, and second power distribution cabinet mounting bracket 306 are installed on the front panel of high-temperature power distribution cabinet 23; power distribution control port 307, power distribution cabinet emergency stop signal interface 308, power distribution cabinet power output port 309, and power distribution cabinet power input port 310 are installed on the top panel; fourth ADIO controller 311, fifth ADIO controller 312, first spare port 313, and second spare port 314 are installed on the side panel.

[0037] The first power distribution cabinet mounting bracket 305 and the second power distribution cabinet mounting bracket 306 are located below the high-temperature power distribution cabinet 23 and are used to support the high-temperature power distribution cabinet; the power distribution control port 307 is connected to the ADIO controller and is used for signal communication with the host computer; the power distribution cabinet emergency stop signal interface 308 is located on the top of the power distribution cabinet and is used for information interaction with the whole machine. After the whole machine starts the EMO interlock, the high-temperature power distribution cabinet is powered off; the power supply output port 309 is located on the top of the high-temperature power distribution cabinet and is connected in a heavy-duty manner to supply power to the preheating chamber; the power supply input port 310 is located on the top of the high-temperature power distribution cabinet and is contacted in a ring terminal manner to receive plant power input.

[0038] like Figures 8-10 As shown, the heating power supply 9 includes a first temperature transmitter 101, a second temperature transmitter 102, a first temperature controller 103, a first temperature limit controller 104, a second temperature controller 105, a switching power supply 106, a second temperature limit controller 107, a current transformer 108, a first power supply fixing handle 109, a first temperature controller setting panel 110, a second temperature controller setting panel 111, a control signal test port 112, a rocker switch 113, a second power supply fixing handle 114, a first over-temperature circuit breaker 115, a second over-temperature circuit breaker 116, a cooling fan 117, a power output port 118, a control port 119, a first temperature acquisition port 120, a second temperature acquisition port 121, a power supply input port 122, and a power ground terminal 123. The high-temperature target plate 206 is divided into an inner ring resistance wire and an outer ring resistance wire. Therefore, the heating power supply 9 is divided into two power outputs for heating. The heating voltage is maintained at AC 120V, and the output current is controlled, thereby controlling the output power and heating speed of the heating power supply. Since the temperature uniformity of the target plate needs to be controlled within ±5℃, the current heating rate is 3℃ / min. A total of four temperature channels are collected: one channel of the inner ring temperature of the target plate is collected through the first temperature transmitter 101, and one channel of the outer ring temperature of the target plate is collected through the second temperature transmitter 102. These two temperature channels are sent to the temperature limit controller for temperature hardware interlocking; when When the temperature sensor detects that the load temperature has reached the alarm value, the over-temperature controller closes the over-temperature circuit breaker within 0.5 seconds, stopping the power output and halting the target plate heating. The target plate temperature then decreases; this process is unidirectional control. Even after the load temperature drops to the alarm value, the power supply remains off. After troubleshooting the cause of the alarm, manually resetting the over-temperature controller restores the heating power supply to normal operation. This setting aims to prevent repeated on / off cycles of the heating power supply 9 during system malfunctions, ensuring continuous heating of the load and protecting equipment, product, and personnel safety. The first temperature controller 103 collects one channel of the target plate's inner ring temperature, and the second temperature controller 105 collects one channel of the target plate's outer ring temperature. These two temperature channels are sent to the industrial control computer via control port 119. These two channels are used for temperature software interlocking. When the difference between the inner and outer ring temperatures exceeds 10°C, the software identifies an abnormal state and remotely shuts off the heating power supply. This setting aims to effectively control the target plate temperature uniformity within ±5°C.

[0039] like Figure 4 As shown, the high-temperature preheating chamber 24 includes a bulb power supply heavy load 501, a base protective shell 502, a bulb power supply cable 503, a bulb 504, a wafer transfer port 505, a wafer heating support frame 506, a temperature sensor 507, a sensor lead wire port 508, a wafer motion support frame 509, a motion motor 510, a lead screw front end 511, a lead screw rear end 512, and a vacuum bellows 513; The bulb power supply heavy load 501 is fixed below the preheating cavity. Its function is to connect the power input port of the high-temperature power distribution cabinet to the bulb 504 through the bulb power supply cable 503. The bulb 504 generates heat, converting electrical energy into heat energy, which in turn heats the wafer. The base protective housing 502 is used to protect the bulb device; the wafer transfer port 505 serves as the wafer transfer port, connecting to the entire cavity, and the preheating cavity forms a vacuum condition; the wafer heating support frame 506 is used to hold the wafer, and is made of silicon dioxide, which has a high melting point, good temperature resistance, and high heat transfer performance; the sensor lead port 508 is located at the upper end of the preheating cavity, which can isolate the vacuum and connect to the temperature sensor 507 to transmit the temperature sensor signal to the ADIO controller of the atmospheric environment; the wafer motion support frame 509 is connected to the external motion motor 510 through the front end of the lead screw 511, and is used to drive the wafer heating support frame 506 to move the wafer up and down.

[0040] The preheating system aims to increase the initial temperature of the wafer, reduce the thermal expansion of the wafer after being absorbed by the heating pad, and minimize frictional damage between the wafer back and the target pad. The preheating system achieves its heating effect by controlling the heating time under specific power conditions. Specifically, the system has three different sets of heating lamps: one set in the inner ring and two sets in the outer ring; it monitors three different power points: inner ring power, outer ring 1 power, and outer ring 2 power. Under different combinations of inner and outer ring power, the sum of the inner ring power and the outer ring power is used to control the heating time of the heating lamp sets, thereby obtaining a certain wafer temperature rise. The specific method involves using a TC wafer to calibrate the temperature rise curve, selecting a section with good linearity, and calculating the new heating time. A standard temperature rise curve table is created, including data such as the heating power of the inner and outer ring lamp sets, initial temperature, final temperature, heating time, and linear temperature rise rate. Based on this data, the required heating time for other heating temperature points is calculated.

[0041] like Figure 11 As shown, the target chamber transfer components include a left chip magazine 401, a right chip magazine 402, a right robotic arm 403, a directional stage 404, a left robotic arm 405, a precooling chamber 406, and a cryogenic target stage 407. The film transfer process for left film library 401 is as follows: Step 1: The left robotic arm 405 moves the wafer from the left wafer storage 401 to the orientation stage 404; Step 2: The left robotic arm 405 moves the wafer from the orientation stage 404 to the preheating cavity; Step 3: The left robotic arm 405 moves the wafer from the preheating cavity to the target stage 407 for ion implantation; Step 4: The right robotic arm removes the wafer from the target stage 407 and temporarily places the wafer in the robotic arm; Step 5: After the orientation stage 404 has no wafers, place it on the orientation stage 404; Step 6: The left robotic arm 405 moves the wafer from the orientation stage 404 to the left wafer storage 401; Film transfer process in right film library 402: Step 1: The right robotic arm 403 moves the wafer from the right wafer storage 402 to the orientation stage 404; Step 2: The right robotic arm 403 moves the wafer from the orientation stage 404 to the preheating cavity; Step 3: The right robotic arm 403 moves the wafer from the preheating cavity to the target stage; Step 4: The right robotic arm 403 moves the wafer from the target stage to the right wafer storage 402.

[0042] like Figure 12 As shown, the high-temperature injection system control process: After system installation, the power circuit breaker of high-temperature distribution cabinet 23 closes, the power supply to preheating chamber 24 is normal, the high-temperature target plate 206 is heated to the set temperature, the wafer is transferred to the orientation stage and after orientation, the wafer enters the preheating chamber through the left robotic arm, the pneumatic lifting motor places the wafer at the lower end, the host computer sets the start through the industrial control computer, and the remote control ADIO controller 22 sends a command to high-temperature distribution cabinet 23, high-temperature distribution cabinet 23 starts to output power to the bulb, the preheating process of the preheating chamber begins, and the heating temperature is monitored in real time by the first temperature sensor 25 and the second temperature sensor 26. When the monitored temperature reaches the set temperature, that is, 70% of the set temperature of the high-temperature target plate, the preheating of the preheating chamber is completed. If the preheating system is still heating after the temperature reaches the set temperature, and the second temperature sensor 6 detects that the temperature exceeds the set value by 10°C, the software interlock is activated, and the remote command shuts down high-temperature distribution cabinet 23; when the second temperature sensor 5 detects that the temperature exceeds the set value by 20°C, the hardware interlock is activated, the circuit breaker of high-temperature distribution cabinet 23 is automatically opened, and the power output of high-temperature distribution cabinet is stopped. After wafer preheating is complete, the robotic arm transfers the wafer to the target plate. The host computer starts the process via the industrial control computer and remotely controls the second ADIO controller 2 to send instructions to the adsorption power supply. The adsorption power supply starts outputting power, adsorbing the wafer onto the target plate. The wafer temperature begins to increase. Once the temperature reaches the set target plate temperature, the wafer stands upright, perpendicular to the ion beam, and ion implantation begins. After the implantation process is completed, the target plate is laid flat, and the remotely controlled adsorption power supply stops working. The target plate releases the adsorbed wafer, and the robotic arm transfers it to the wafer library. 25 wafers are implanted and then uniformly warmed up in the wafer library. Once the temperature reaches room temperature, they are transferred to the wafer cassette, completing the high-temperature implantation process.

[0043] Specifically, the wafer undergoes heating and implantation processes in a high-temperature system: 1. The high-temperature system has been installed and the heating power supply has been turned on, meeting the conditions for remotely setting the heating. 2. Set the heating power supply to 500℃, and heat the target plate at a rate of 3℃ / min, which will take about 2 hours to reach 500℃; 3. After the wafer is transferred to the preheating cavity, the high-temperature power distribution cabinet is enabled, the preheating cavity temperature rises, the heating time is 8 seconds, the wafer can reach 350℃, the preheating cavity temperature rises to 70% of the ion implantation set temperature, and the temperature accuracy is controlled within 5℃. 4. The wafer is transferred to the orientation stage for orientation, the wafer injection angle is adjusted, and the beam is controlled to precisely inject into the wafer; 5. After the wafer is oriented, it is transferred to the target pad for heating and temperature rise; 6. After the wafer temperature reaches the set value, ion implantation begins on the wafer; 7. After wafer ion implantation is completed, the wafer is transferred back to the wafer library for wafer warming.

[0044] 8. Once the wafer temperature recovery is complete, the entire high-temperature injection process ends, and the wafer is returned to the wafer cassette.

[0045] This invention effectively addresses the technological gap in existing ion implanters that cannot achieve uniform and precise doping under high-temperature conditions by integrating a high-temperature target heating system and a preheating system. The system achieves stable and uniform ion implantation of SiC wafers at high temperatures (up to 1000℃). The high-temperature target heating system employs multiple temperature sensors to monitor the inner and outer ring temperatures in real time, combined with closed-loop control of the heating power supply, ensuring wafer temperature accuracy within ±1℃, significantly improving the uniformity and activation efficiency of ion implantation. Secondly, the system innovatively introduces a preheating chamber module, using bulb heating to preheat the wafer to a set temperature (e.g., 70% of the target temperature) before implantation, drastically shortening the wafer's heating time on the target, increasing overall implantation efficiency by approximately 30%, and reducing the risk of back-side scratches due to thermal expansion.

[0046] The system of this invention has a comprehensive hardware and software dual interlocking protection mechanism. When the temperature exceeds the set threshold, the system can quickly cut off the power through hardware measures such as temperature limit controllers and over-temperature circuit breakers, as well as remote commands from the industrial control computer, to ensure the safety of the equipment and wafers and prevent over-temperature damage.

[0047] The system of this invention adopts a modular design, can be installed in parallel with the ambient temperature machine and operate independently, which facilitates maintenance and industrialization. The system ensures control reliability through dual-loop fiber optic communication, and the remote power distribution cabinet supports high-power output, meeting the stringent power and control requirements of the high-temperature injection process.

[0048] The above are merely preferred embodiments of the present invention. The scope of protection of the present invention is not limited to the above embodiments. All technical solutions falling within the scope of the present invention's concept are within the scope of protection of the present invention. It should be noted that for those skilled in the art, any improvements and modifications made without departing from the principles of the present invention should be considered within the scope of protection of the present invention.

Claims

1. A high-temperature implantation control system for a SiC ion implanter, characterized in that, The high-temperature target disc (206) heating system and a preheating system are included; The high-temperature target disc (206) heating system includes a first industrial computer (1), a first ADIO controller (10), a second ADIO controller (2), an adsorption power supply (3), a heating power supply (9), a high-temperature target table (5), and a plurality of temperature sensors (507); The first industrial computer (1) is connected with the first ADIO controller (10) and the second ADIO controller (2) respectively; The first ADIO controller (10) is connected with the heating power supply (9), and the heating power supply (9) is connected to the high-temperature target table (5); The second ADIO controller (2) is connected with the adsorption power supply (3), and the adsorption power supply (3) is connected to the high-temperature target table (5); the adsorption power supply (3) is used for outputting multiple AC powers, fixing a wafer by electrostatic adsorption, and realizing wafer temperature rise; The plurality of temperature sensors are connected with the heating power supply (9) and used for collecting target disc inner and outer ring temperatures in real time; The preheating system includes a second industrial computer (21), a third ADIO controller (22), a high-temperature power distribution cabinet (23), a high-temperature preheating cavity (24), and a temperature sensor; The second industrial computer (21) is connected with the third ADIO controller (22); the third ADIO controller (22) is connected with the high-temperature power distribution cabinet (23); the high-temperature power distribution cabinet (23) is connected with the high-temperature preheating cavity (24); the temperature sensor is installed in the high-temperature preheating cavity (24) and connected with the third ADIO controller (22) or the high-temperature power distribution cabinet (23) and used for monitoring wafer temperature.

2. The high temperature implant control system for a SiC ion implanter of claim 1, wherein, The heating power supply (9) includes a temperature transmitter, a temperature controller, a temperature limiting controller, an over-temperature breaker, and a switching power supply (106); The temperature transmitter is used for collecting target disc inner and outer ring temperatures; The temperature controller is used for processing temperature data and sending to the industrial computer through a control port (119) to realize temperature software interlocking; The temperature limiting controller and the over-temperature breaker are used for hardware interlocking and automatically cut off power output when the temperature exceeds a set value.

3. The high temperature implant control system for a SiC ion implanter of claim 1, wherein, The high-temperature target table (5) includes a high-temperature target disc (206), an air floating shaft (210), a target table fixing member, and a temperature sensor (507); The high-temperature target disc (206) is fixed on the target table fixing member and used for adsorbing and heating a wafer; The air floating shaft (210) is connected with a target disc heating cable (201) and a target disc temperature collection cable (202) and used for transmitting power and signals; The temperature sensor (507) includes an inner ring temperature sensor (208) and an outer ring temperature sensor (205) and is connected with the heating power supply (9) through a temperature collection cable.

4. The high temperature implant control system for SiC ion implanter according to claim 1 or 2 or 3, wherein, The high-temperature power distribution cabinet (23) comprises an emergency stop button (301), a main circuit breaker knob, a power distribution control port (307), a power supply input port and a power supply output port; the emergency stop button (301) is used for emergency interruption of power supply output of the power distribution cabinet; the main circuit breaker knob is used for starting the power supply function of the high-temperature power distribution cabinet (23); the power distribution control port (307) is connected with an ADIO controller and is used for signal communication with an upper computer; the power supply input port is used for receiving plant power input; and the power supply output port is connected with the high-temperature preheating cavity (24) through a power cable and provides power demand for the preheating cavity.

5. The high temperature implant control system for SiC ion implanter as claimed in claim 1 or 2 or 3, wherein, The high-temperature preheating cavity (24) comprises a bulb (504), a wafer heating support frame (506), a wafer transmission port (505), a temperature sensor (507) and a motion motor (510). The bulb (504) is connected with the high-temperature power distribution cabinet (23) and is used for generating heat to heat the wafer. The wafer heating support frame (506) is used for supporting the wafer and driving the wafer to move up and down through the motion motor (510). The wafer transmission port (505) is used for connecting the whole machine cavity to form a vacuum condition. The temperature sensor (507) is connected with the ADIO controller or the high-temperature power distribution cabinet (23) through a sensor lead port (508) and is used for real-time monitoring of wafer temperature.

6. The high temperature implant control system for SiC ion implanter as claimed in claim 1 or 2 or 3, wherein, The high-temperature target disc heating system and the preheating system share the same industrial computer or use independent industrial computers; the industrial computer is configured with double-loop optical fiber communication, including main loop communication and auxiliary loop communication, to prevent abnormal single-loop communication from affecting system operation.

7. The high temperature implant control system for SiC ion implanter as claimed in claim 1 or 2 or 3, wherein, The plurality of temperature sensors in the high-temperature target disc heating system comprises a first outer ring temperature sensor (4), a second outer ring temperature sensor (8), a first inner ring temperature sensor (6) and a second inner ring temperature sensor (7), which are arranged at the inner ring and the outer ring of the target disc respectively, and are used for collecting temperature data and realizing hardware and software temperature interlocking.

8. The high temperature implant control system for SiC ion implanter as claimed in claim 1 or 2 or 3, wherein, The temperature sensors in the preheating system comprise a first temperature sensor (25) and a second temperature sensor (26). The first temperature sensor (25) is connected with the high-temperature power distribution cabinet (23) and is used for hardware interlocking. The second temperature sensor (26) is connected with the ADIO controller and is used for software interlocking. When the temperature exceeds the set value, the interlocking system automatically closes the high-temperature power distribution cabinet (23) or disconnects the circuit breaker.

9. The high temperature implant control system for SiC ion implanter as claimed in claim 1 or 2 or 3, wherein, Further comprising wafer transmission components, including a left wafer library (401), a right wafer library (402), an orientation table (404), a left mechanical hand (405) and a right mechanical hand (403); the left mechanical hand (405) is used for transmitting the wafer from the left wafer library (401) to the orientation table (404), then from the orientation table (404) to the preheating cavity, and finally from the preheating cavity to the high-temperature target table (5); the right mechanical hand (403) is used for transmitting the wafer from the high-temperature target table (5) to the right wafer library (402); and the orientation table (404) is used for adjusting wafer injection angle.

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