Substrate with built-in through conductor

Abstract

A through-conductor-embedded substrate (1) is provided with: a substrate (10) provided with a first main surface (11) and a second main surface (12) facing the first main surface (11), and provided with a plurality of through-holes (20); a through conductor (30) inserted into the through hole (20); and a metal layer (70) extending in the same plane direction as the first main surface (11) and connected to the through conductor (30), the through hole (20) is provided with a first through hole (21) and a second through hole (22) which are different through holes, and the through conductor (30) is provided with a first through conductor (31) and a second through conductor (32) which are connected to the metal layer (70). The first through conductor (31) is in contact with or close to an inner peripheral wall (26) of the first through hole (21) on the side away from the second through hole (22), and the second through conductor (32) is in contact with or close to an inner peripheral wall (26) of the second through hole (22) on the side away from the first through hole (21).

Description

Technical Field

[0001] This invention relates to a through conductor embedded in a substrate. Background Technology

[0002] Patent Document 1 discloses a glass substrate comprising: a through conductor formed in a through hole penetrating the glass substrate in the thickness direction; and a resin body disposed between the through conductor and the through hole, surrounding the through conductor.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2020-047643 Summary of the Invention

[0006] The problem the invention aims to solve

[0007] In the structure described in Patent Document 1, there are cases where a wiring layer is provided on the glass substrate, and a heat dissipation layer made of metal is provided for heat dissipation of the heat sink. The aforementioned wiring layer and heat dissipation layer are connected to the through conductor.

[0008] Wiring layers and heat sinks can experience thermal expansion due to rising ambient temperatures. In particular, the use of semiconductors and other components connected to the glass substrate can cause temperature increases, sometimes resulting in overheating compared to room temperature.

[0009] At this time, the wiring layer and heat sink have a higher coefficient of thermal expansion than the glass substrate, so they will expand relative to the glass substrate in the planar direction due to heating. Since the through conductor is connected to the wiring layer and heat sink, stress will be applied to the through conductor in a way that causes it to move in the planar direction of the glass substrate.

[0010] In the technology described in Patent Document 1, the through conductor is surrounded by a resin body. Since resin is a softer material than the through conductor, when stress is applied to the through conductor to move it in the plane of the glass substrate, the resin body cannot impede the movement of the through conductor. The through conductor will deform the resin body and move it in the plane of the glass substrate under stress.

[0011] Furthermore, problems such as warping of the glass substrate can sometimes occur due to the movement of the conductor.

[0012] The present invention was made to solve the above-mentioned problems, and its purpose is to provide a through conductor embedded substrate that prevents the through conductor inserted into the through hole from moving under the action of thermal stress.

[0013] Solution for solving the problem

[0014] The through-conductor embedded substrate of the present invention is characterized in that the through-conductor embedded substrate comprises: a substrate having a first main surface and a second main surface opposite to the first main surface, and having a plurality of through holes extending from the first main surface to the second main surface; a through conductor inserted into the through holes; and a metal layer extending in the same planar direction as the first main surface and connected to the through conductor, wherein the through holes include a first through hole and a second through hole, the first through hole and the second through hole being different through holes, and the through conductor having a first through conductor inserted into the first through hole and a second through hole. A second through conductor is inserted into the second through hole. Both the first through conductor and the second through conductor are connected to the metal layer. When the straight line passing through the center of the first through hole and the center of the second through hole is set as the first reference line, the first intersection point, which is the side away from the second through hole, of the intersection points of the inner peripheral wall of the first through hole and the first reference line, is in contact with or close to the first through conductor. The second intersection point, which is the side away from the first through hole, of the intersection points of the inner peripheral wall of the second through hole and the first reference line, is in contact with or close to the second through conductor.

[0015] Furthermore, another aspect of the present invention features a through-conductor embedded substrate, which comprises: a substrate having a first main surface and a second main surface opposite to the first main surface, and having a plurality of through holes extending from the first main surface to the second main surface; a through conductor inserted into the through holes; and a metal layer extending in the same planar direction as the first main surface and connected to the through conductor, wherein the through holes include a third through hole, a fourth through hole, and a fifth through hole, and the third through hole, the fourth through hole, and the fifth through hole are further characterized in that the through conductor embedded substrate comprises: a substrate having a first main surface and a second main surface opposite to the first main surface, and having a plurality of through holes extending from the first main surface to the second main surface; a through conductor inserted into the through holes; and a metal layer extending in the same planar direction as the first main surface and connected to the through conductor, wherein the through holes include a third through hole, a fourth through hole, and a fifth through hole; and the third through hole, the fourth through hole, and the fifth through hole are further characterized in that the through conductor embedded substrate comprises: a substrate having a first main surface and a second main surface opposite to the first main surface, and having a plurality of through holes extending from the first main surface to the second main surface; a through conductor inserted into the through holes; and a metal layer extending in the same planar direction as the first main surface and connected to the through conductor; and a metal layer extending in the same planar direction as the first main surface and connected to the through conductor; and a metal layer having a third through hole, a fourth through hole, and a fifth through hole. The fifth through hole is a different through hole. The through conductor includes a third through conductor inserted into the third through hole, a fourth through conductor inserted into the fourth through hole, and a fifth through conductor inserted into the fifth through hole. The third, fourth, and fifth through conductors are all connected to the metal layer. A straight line passing through the center of the third through hole and the center of the fourth through hole is set as the third reference line, and a straight line passing through the center of the fourth through hole and the center of the fifth through hole is set as the fourth reference line. When the line passing through the center of the fifth through hole and the center of the third through hole is set as the fifth reference line, the portion between the intersection point of the inner peripheral wall of the third through hole and the third reference line (the point on the side away from the fourth through hole, i.e., the third intersection point) and the intersection point of the inner peripheral wall of the third through hole and the fifth reference line (the point on the side away from the fifth through hole, i.e., the fourth intersection point) is in contact with or close to the third through conductor. The portion between the intersection point of the inner peripheral wall of the fourth through hole and the fourth reference line (the point on the side away from the fifth through hole) is... The portion between the intersection point of the fifth through hole and the intersection point of the inner peripheral wall of the fourth through hole and the third reference line, namely the sixth intersection point, is in contact with or close to the fourth through conductor. The portion between the intersection point of the inner peripheral wall of the fifth through hole and the fifth reference line, namely the seventh intersection point, is in contact with or close to the fifth through conductor, namely the eighth intersection point, is in contact with or close to the fifth through conductor.

[0016] Invention Effects

[0017] According to the present invention, a through conductor embedded substrate can be provided to prevent the through conductor inserted into the through hole from moving under thermal stress. Attached Figure Description

[0018] Figure 1 This is a top view of the through conductor embedded substrate according to an embodiment of the present invention, from the first main surface side of the substrate.

[0019] Figure 2 It was extracted Figure 1 A top view of region S, which is a through conductor embedded in the substrate.

[0020] Figure 3 yes Figure 1 The AA-line cross-sectional view of the through conductor embedded substrate shown illustrates the structure of the metal layer including the first main surface side and the second main surface side of the substrate.

[0021] Figure 4 It is an explanatory diagram illustrating the positional relationship when the through conductor and the intersection point are close.

[0022] Figure 5 It is a top view showing the three through holes and the through conductor.

[0023] Figure 6 It is an explanatory diagram illustrating the positional relationship between the through conductor and the intersection point and the portion between the intersection points when they are close to each other.

[0024] Figure 7 It is a top view showing the positional relationship between the two through holes and the through conductor and the metal layer.

[0025] Figure 8 It is a top view showing the positional relationship between the two through holes and the through conductor and the metal layer.

[0026] Figure 9 It is a top view showing the positional relationship between the three through holes and the through conductor and the metal layer.

[0027] Figure 10 It is a cross-sectional view schematically showing the shape in contact with the inner peripheral wall line of the through hole into which the through conductor is inserted.

[0028] Figure 11 It is a cross-sectional view schematically showing a shape where the length of the through conductor is shorter than the length of the through hole.

[0029] Figure 12 It is a schematic cross-sectional view showing a concave-convex shape on the side of a conductor.

[0030] Figure 13 It is a schematic cross-sectional view showing the concave and convex shape of the inner peripheral wall of the through hole. Detailed Implementation

[0031] The through conductor embedded substrate of the present invention will be described below.

[0032] However, the present invention is not limited to the following structures and can be appropriately modified without changing the spirit of the invention. Furthermore, combinations of two or more of the preferred structures described below also fall under the scope of the present invention.

[0033] [Through-conductor embedded substrate]

[0034] Figure 1 This is a top view of the through-conductor embedded substrate according to an embodiment of the present invention, from the first main surface side of the substrate. Figure 1 In order to show the through holes and through conductors, the metal layer on the first main surface of the substrate is omitted in the illustration.

[0035] Figure 2 It was extracted Figure 1 A top view of region S, which is a through conductor embedded in the substrate.

[0036] Figure 3 yes Figure 1 The AA-line cross-sectional view of the through conductor embedded substrate shown illustrates the structure of the metal layer including the first main surface side and the second main surface side of the substrate.

[0037] exist Figure 1 In the through conductor embedded substrate 1 shown, the first main surface 11 of substrate 10 is shown.

[0038] The substrate 10 has a plurality of through holes 20, and through conductors 30 are inserted into the through holes 20. As a whole, the through conductor embedded substrate has a plurality of through holes and a plurality of through conductors. Since one through conductor is inserted into one through hole, it can be said that the through conductor embedded substrate has a plurality of through holes into which one through conductor is inserted.

[0039] In addition, Figure 1 The image shows resin 60 filling the space between the through conductor 30 and the through hole 20.

[0040] Figure 3 A cross-section of the substrate 10 is shown. The substrate 10 has a first main surface 11 and a second main surface 12 opposite to the first main surface 11, and has a plurality of through holes 20 extending from the first main surface 11 to the second main surface 12.

[0041] The substrate is preferably made of a material with high rigidity. It is preferably made of a material with a smaller coefficient of thermal expansion than the metal layer, and is harder than the resin filling the through-holes.

[0042] As an indicator of stiffness, materials with a Young's modulus of 10 GPa or higher and 50 GPa or lower are preferred.

[0043] The preferred material for the substrate is a glass-containing substrate. A glass-containing substrate has higher rigidity, a smaller coefficient of thermal expansion than a metal layer, and is harder than the resin filling the through-holes. Composite substrates of resin and glass can be cited as examples of glass-containing substrates. Furthermore, E-glass can be cited as a specific example of glass constituting a glass-containing substrate, and epoxy resin can be cited as a specific example of resin. Composite substrates of resin and glass can be cited as examples such as glass epoxy boards.

[0044] The thickness of the substrate is preferably 0.3 mm or more and 5.0 mm or less.

[0045] In addition, the coefficient of thermal expansion of the substrate is preferably 4×10⁻⁶. -6 / K or higher and 14×10 -6 / K or below.

[0046] The substrate has multiple through holes, and a through conductor is inserted into each through hole.

[0047] The top view shape of the through hole is preferably circular, and the diameter of the through hole is preferably 0.3 mm or more and 5 mm or less.

[0048] The length (thickness) of the through hole is the same as the thickness of the substrate.

[0049] The through conductor is made of a material that is both an electrical conductor and / or a thermal conductor. The through conductor is preferably a metallic material. Metallic materials are generally electrical conductors and thermal conductors. Copper is preferred as a metallic conductor. Other than metallic materials, ceramic materials and carbon materials can be listed as through conductors; most can be used as thermal conductors, and some can also be used as electrical conductors. Examples include silicon carbide, aluminum nitride, alumina, and graphite.

[0050] The through conductor is preferably a material with a resistivity of 0.017 μΩ·m or higher and 0.022 μΩ·m or lower. It is also preferably a material with a thermal conductivity of 300 W / m·K or higher and 400 W / m·K or lower. Furthermore, the coefficient of thermal expansion of the through conductor is preferably 17 × 10⁻⁶. -6 / K or higher and 70×10 -6 / K or less. Furthermore, the Young's modulus of the through conductor is preferably 50 GPa or more and 300 GPa or less.

[0051] The through conductor is preferably cylindrical (circular in top view), and when the through conductor is cylindrical, the diameter of its base is preferably 0.2 mm or more and 4.9 mm or less. Furthermore, regardless of the top view shapes of the through conductor and the through hole, the area ratio of the top view area of ​​the through conductor to the top view area of ​​the through hole is preferably 96% or less.

[0052] The length of the through conductor (the length along the thickness direction of the through hole) can be the same as the length of the through hole, or it can be shorter than the length of the through hole.

[0053] Preferably, resin is filled between the through conductor and the through hole into which the through conductor is inserted.

[0054] Specific examples of resins include epoxy resin, silicone resin, acrylic resin, or polyimide resin. Resins are generally materials that are more flexible than those used to penetrate the conductor and substrate.

[0055] In the through conductor embedded substrate of the present invention, the position of the through conductor in the through hole is defined by a specific plurality (two or three) through holes provided in the substrate and into which the through conductor is inserted.

[0056] First, the implementation method focusing on two through holes will be explained.

[0057] exist Figure 1 In the top view shown, a through hole is selected and considered that satisfies the relationship specified in this invention. Figure 1 In the middle, we focus on the through holes contained in the region shown as region S.

[0058] Between the two through holes we are looking at, the following relationship holds true.

[0059] That is, when the straight line passing through the center of the first through hole and the second through hole is set as the first reference line, the first intersection point, which is the side away from the second through hole, is in contact with or close to the first through conductor, and the second intersection point, which is the side away from the first through hole, is in contact with or close to the second through conductor.

[0060] In addition, there may be other unnoticed through holes between the two through holes that are being considered, or there may be no other unnoticed through holes.

[0061] Reference Figure 2 The above-mentioned conditions shall be explained for the two through holes under consideration.

[0062] Figure 2 The through-hole and through conductor contained in region S are shown.

[0063] exist Figure 2 In the diagram, the through hole and through conductor shown on the left are the first through hole 21 and the first through conductor 31, and the through hole and through conductor shown on the right are the second through hole 22 and the second through conductor 32. These are the two through holes and through conductors considered in region S.

[0064] The through hole and through conductor shown in the center are the unseen through hole 120 and the unseen through conductor 130.

[0065] The straight line passing through the center C1 of the first through hole 21 and the center C2 of the second through hole 22 is set as the first reference line 41.

[0066] The inner peripheral wall of the first through hole 21 and the first reference line 41 have two intersection points. The intersection point on the side away from the second through hole 22 is designated as the first intersection point (reference numeral 101). The intersection point on the side closer to the second through hole 22 is designated as the eleventh intersection point (reference numeral 111).

[0067] Similarly, the inner peripheral wall of the second through hole 22 and the first reference line 41 have two intersection points. The intersection point on the side away from the first through hole 21 is designated as the second intersection point (reference numeral 102). The intersection point on the side closer to the first through hole 21 is designated as the twelfth intersection point (reference numeral 112).

[0068] The first through conductor 31 is inserted into the first through hole 21 and is located on the side of the first through hole 21 away from the second through hole 22. This situation is described as the first through conductor 31 being in contact with or close to the first intersection point 101. In addition, the first through conductor 31 is separated from the intersection point on the side closer to the second through hole 22, namely the eleventh intersection point 111.

[0069] Figure 2 This shows the state in which the first through conductor 31 contacts the first intersection point 101 at its left end.

[0070] The second through conductor 32 is inserted into the second through hole 22, and is located on the side away from the first through hole 21 within the second through hole 22. This situation is described as the second through conductor 32 being in contact with or close to the second intersection point 102. In addition, the second through conductor 32 is separated from the intersection point on the side closer to the first through hole 21, namely the 12th intersection point 112.

[0071] Figure 2 This shows the state in which the second through conductor 32 contacts the second intersection point 102 at its right end.

[0072] With regard to "contact or proximity of the through conductor to the intersection" in this specification, the intersection that is in contact or proximity when the through conductor is the first through conductor is the first intersection, and the intersection that is in contact or proximity when the through conductor is the second through conductor is the second intersection.

[0073] When the conductor is in contact with the intersection point, it is Figure 2 The shape shown in the diagram can be visually determined to determine whether the positional relationship between the conductor and the intersection point is that of a through conductor when viewed from above.

[0074] When a through conductor is close to an intersection, it means that the through conductor is not in contact with the intersection but exists in its vicinity. This positional relationship can also be determined visually when viewed from above.

[0075] Reference Figure 4 The case where the through conductor is close to the intersection point is explained.

[0076] Figure 4This is an explanatory diagram illustrating the positional relationship when the through conductor and the intersection point are close, showing the relationship between the first through conductor 31, the first through hole 21 and the first intersection point 101.

[0077] First, focusing on the position where the side (outer periphery) of the first through conductor 31 is closest to the inner peripheral wall 26 of the first through hole 21, measure this distance, that is, the shortest distance between the first through conductor 31 and the inner peripheral wall 26 of the first through hole 21. Figure 4 (Represented by a double arrow R1). The point on the side of the first through conductor 31 is set as the closest point 31r.

[0078] Furthermore, taking the radius connecting the center C1 of the first through hole 21 and the first intersection point as the center, draw a sector with a radius of 30° (60° in total) on both sides of the aforementioned radius, including an arc from the first intersection point 101 along the inner peripheral wall of the first through hole 21. If the closest point 31r enters the aforementioned sector, it can be said that the first through conductor 31 is located on the side away from the second through hole 22 within the first through hole 21.

[0079] In addition, in order to determine that the first through conductor 31 and the first intersection point 101 are close, the shortest distance R1 between the first through conductor 31 and the inner peripheral wall 26 of the first through hole 21 is required. Figure 4 (Represented by a double arrow R1) to a certain extent, the aforementioned shortest distance R1 is preferably less than 20 μm.

[0080] Furthermore, as an indicator that the shortest distance between the first through conductor 31 and the inner peripheral wall 26 of the first through hole 21 is short to a certain extent, the longest distance between the first through conductor 31 and the inner peripheral wall 26 of the first through hole 21 is set as R2 ( Figure 4 When represented by a double arrow R2, the proximity rate can be expressed as [(R2-R1) / (R1+R2)]×100 (%), and the value of this proximity rate is preferably 50% or more. Furthermore, the proximity rate is more preferably 70% or more, and even more preferably 90% or more.

[0081] The relationship between the second through hole and the second through conductor is also the same.

[0082] Figure 3 yes Figure 1 The AA-line cross-sectional view of the through conductor embedded substrate shown illustrates the structure of the metal layer including the first main surface side and the second main surface side of the substrate.

[0083] A metal layer 71 extending in the same plane direction as the first main surface 11 is provided on the first main surface 11 of the substrate 10, and a metal layer 72 extending in the same plane direction as the second main surface 12 is provided on the second main surface 12.

[0084] Both the first through conductor 31 and the second through conductor 32 are connected to the metal layer 71 and the metal layer 72.

[0085] Furthermore, the through conductor embedded substrate only needs to have a metal layer (metal layer 71) extending in the same direction as the first main surface of the substrate, or it may not have a metal layer on the second main surface of the substrate.

[0086] The metal layer is preferably a metal foil or a metal plating, and more preferably a copper foil or a copper plating. The coefficient of thermal expansion of the metal layer is generally higher than that of the substrate.

[0087] Figure 3 The diagram shows the state in which the first through conductor 31 is located to the left of the first through hole 21 and is in contact with the substrate 10 (in contact with the inner peripheral wall 26 of the first through hole 21). Furthermore, the diagram shows the state in which the second through conductor 32 is located to the right of the second through hole 22 and is in contact with the substrate 10 (in contact with the inner peripheral wall 26 of the second through hole 22).

[0088] In addition, the first through conductor 31 and the second through conductor 32 are connected to the metal layer 71.

[0089] When the substrate 1 of the through conductor is heated and the metal layer 71 expands in the planar direction relative to the substrate 10, since the coefficient of thermal expansion of the metal layer 71 is greater than that of the substrate 10, stress is applied to the first through conductor 31 and the second through conductor 32 to make them move in the planar direction of the substrate 10.

[0090] The stress is applied outwards, applying stress to the left side of the first through conductor 31 and stress to the right side of the second through conductor 32. Figure 3 In the diagram, the direction of stress is indicated by an arrow pointing to the left from the first through conductor 31 and an arrow pointing to the right from the second through conductor 32.

[0091] The first through conductor 31 is connected to the substrate 10 on its left side. Since the substrate 10 is made of a material with high rigidity, the first through conductor 31 cannot deform or move the substrate 10. Similarly, the second through conductor 32 is connected to the substrate 10 on its right side. Since the substrate 10 is made of a material with high rigidity, the second through conductor 32 cannot deform or move the substrate 10.

[0092] That is, even if the substrate containing the through conductor is heated and stress is applied to the first through conductor and the second through conductor to make them move in the planar direction of the substrate, the movement of the first through conductor and the second through conductor in the planar direction of the substrate can be prevented.

[0093] Therefore, by adopting the structure described above, it is possible to make a through conductor embedded substrate that prevents the through conductor inserted into the through hole from moving under the action of thermal stress.

[0094] also, Figure 3 The presence of the through conductor 130, shown in the center and inserted into the unseen through hole 120, is irrelevant to achieving the aforementioned effect.

[0095] In the through conductor embedded substrate of the present invention, it is preferable that one metal layer is connected to 30 or more through conductors, and among the through conductors connected to the metal layer, the proportion of through conductors whose center of the through hole into which the through conductor is inserted is offset from the center of the through conductor is 10% or more.

[0096] Figure 1 The top view shown illustrates 20 through holes 20 and through conductors 30, with the through conductors 30 connected to a metal layer (not shown). Figure 3 The metal layer 71 shown is connected. Figure 1 Of the 20 through conductors 30 shown, the through conductors other than the one shown in the center of region S are through conductors whose center is offset from the center of the through hole into which the through conductor is inserted.

[0097] The phrase "the center of the through hole with the through conductor is offset from the center of the through conductor" means that the center of the through conductor is offset regardless of which direction it is in the through hole.

[0098] As a reference for whether the centers are misaligned, a circle with a diameter of 10% of the diameter of the through hole is drawn with the center of the through hole as the center. If the center of the through conductor is not located within this circle, it is determined that the center of the through hole and the center of the through conductor are misaligned.

[0099] This concludes the description of an embodiment focusing on two specific through holes in which a through-hole with a through conductor is inserted. Hereinafter, an embodiment focusing on three specific through holes will be described.

[0100] Figure 5 It is a top view showing the three through holes and the through conductor.

[0101] exist Figure 5 In the image, the through-hole and through conductor shown in the upper left corner are the third through-hole 23 and the third through conductor 33; the through-hole and through conductor shown in the upper right corner are the fourth through-hole 24 and the fourth through conductor 34; and the through-hole and through conductor shown in the lower center are the fifth through-hole 25 and the fifth through conductor 35. These are the three through-holes and through conductors in focus.

[0102] The straight line passing through the center C3 of the third through hole 23 and the center C4 of the fourth through hole 24 is set as the third reference line 43.

[0103] The straight line passing through the center C4 of the fourth through hole 24 and the center C5 of the fifth through hole 25 is set as the fourth reference line 44.

[0104] The straight line passing through the center C5 of the 5th through hole 25 and the center C3 of the 3rd through hole 23 is set as the 5th baseline 45.

[0105] The inner peripheral wall of the third through hole 23 intersects with the third reference line 43 at two points. The intersection point on the side away from the fourth through hole 24 is designated as the third intersection point (reference numeral 103). The intersection point on the side closer to the fourth through hole 24 is designated as the thirteenth intersection point (reference numeral 113).

[0106] The inner peripheral wall of the third through hole 23 intersects with the fifth reference line 45 at two points. The intersection point on the side away from the fifth through hole 25 is designated as the fourth intersection point (reference numeral 104). The intersection point on the side closer to the fifth through hole 25 is designated as the fourteenth intersection point (reference numeral 114).

[0107] The inner peripheral wall of the fourth through hole 24 intersects with the fourth reference line 44 at two points. The intersection point on the side away from the fifth through hole 25 is designated as the fifth intersection point (reference numeral 105). The intersection point on the side closer to the fifth through hole 25 is designated as the fifteenth intersection point (reference numeral 115).

[0108] The inner peripheral wall of the fourth through hole 24 intersects the third reference line 43 at two points. The intersection point on the side away from the third through hole 23 is designated as the sixth intersection point (reference numeral 106). The intersection point on the side closer to the third through hole 23 is designated as the sixteenth intersection point (reference numeral 116).

[0109] The inner peripheral wall of the fifth through hole 25 intersects with the fifth reference line 45 at two points. The intersection point on the side away from the third through hole 23 is designated as the seventh intersection point (reference numeral 107). The intersection point on the side closer to the third through hole 23 is designated as the seventeenth intersection point (reference numeral 117).

[0110] The inner peripheral wall of the fifth through hole 25 intersects with the fourth reference line 44 at two points. The intersection point on the side away from the fourth through hole 24 is designated as the eighth intersection point (reference numeral 108). The intersection point on the side closer to the fourth through hole 24 is designated as the eighteenth intersection point (reference numeral 118).

[0111] The third through conductor 33 is inserted into the third through hole 23, and is located within the third through hole 23 on a side away from the fourth through hole 24 and away from the fifth through hole 25. This situation can be described as the third through conductor 33 being in partial contact or close to the third intersection point 103 and the fourth intersection point 104. In addition, the third through conductor 33 is separated from the intersection point 13 (the side closest to the fourth through hole 24), which is the 113th intersection point, and is separated from the intersection point 14 (the side closest to the fifth through hole 25), which is the 114th intersection point.

[0112] Figure 5 The diagram shows the state in which the third through conductor 33 contacts the inner peripheral wall of the third through hole 23 between the third intersection 103 and the fourth intersection 104 at its upper left end.

[0113] The fourth through conductor 34 is inserted into the fourth through hole 24, located within the fourth through hole 24 on a side away from the fifth through hole 25 and away from the third through hole 23. This can be described as the fourth through conductor 34 being in partial contact or close to the fifth intersection point 105 and the sixth intersection point 106. Furthermore, the fourth through conductor 34 is separated from the intersection point 15 (the side closest to the fifth through hole 25), i.e., the fifth intersection point 115, and from the intersection point 16 (the side closest to the third through hole 23), i.e., the sixth intersection point 116.

[0114] Figure 5 The diagram shows the state in which the fourth through conductor 34 contacts the inner peripheral wall of the fourth through hole 24 between the fifth intersection 105 and the sixth intersection 106 at its upper right end.

[0115] The fifth through conductor 35 is inserted into the fifth through hole 25, located within the fifth through hole 25 on a side away from the third through hole 23 and the fourth through hole 24. This can be described as the fifth through conductor 35 being in partial contact or close to the seventh intersection point 107 and the eighth intersection point 108. Furthermore, the fifth through conductor 35 is separated from the intersection point 17 (the side closest to the third through hole 23), and from the intersection point 18 (the side closest to the fourth through hole 24).

[0116] Figure 5 The diagram shows the state in which the fifth through conductor 35 contacts the inner peripheral wall of the fifth through hole 25 between its lower end and the seventh intersection 107 and the eighth intersection 108.

[0117] In this specification, the phrase "partial contact or proximity between the through conductor and the intersections" refers to the portion of the inner circumferential wall of the through hole between the intersections, which is the part connecting the intersections to each other along the shortest distance of the inner circumferential wall. When the through conductor contacts this portion, it is considered "partial contact between the through conductor and the intersections," and the positional relationship of partial contact between the through conductor and the intersections is determined visually when viewed from above.

[0118] Reference Figure 6 The following explains the cases where the through conductor is close to the intersection and the portion between the intersection.

[0119] Figure 6This is an explanatory diagram illustrating the positional relationship between the through conductor and the intersection point and the parts between the intersection points when they are close together. It shows the relationship between the third through conductor 33, the third through hole 23, the third intersection point 103, and the fourth intersection point 104.

[0120] First, focusing on the position where the distance between the side (outer periphery) of the third through conductor 33 and the inner peripheral wall of the third through hole 23 is closest, measure this distance, that is, the shortest distance between the third through conductor 33 and the inner peripheral wall 26 of the third through hole 23. Figure 6 (Represented by a double arrow R1). The point on the side of the third through conductor 33 is designated as the closest point 33r.

[0121] Furthermore, with the center C3 of the third through hole 23 as the center, draw a sector with the third intersection point 103 and the fourth intersection point 104 as the two ends of the arc. If the closest point 33r enters the above sector, it can be said that the third through conductor 33 is located in the third through hole 23 on the side away from the fourth through hole 24 and away from the fifth through hole 25.

[0122] In addition, in order to determine that the portion between the third through conductor 33 and the third intersection point 103 and the fourth intersection point 104 is close, the shortest distance between the third through conductor 33 and the inner peripheral wall 26 of the third through hole 23 is required. Figure 6 (Represented by a double arrow R1) to a certain extent, the aforementioned shortest distance R1 is preferably less than 20 μm.

[0123] Furthermore, as an indicator that the shortest distance between the third through conductor 33 and the inner peripheral wall 26 of the third through hole 23 is short to a certain extent, the longest distance between the third through conductor 33 and the inner peripheral wall 26 of the third through hole 23 is set as R2 ( Figure 6 When represented by a double arrow R2, the proximity rate can be expressed as [(R2-R1) / (R1+R2)]×100 (%), and the value of this proximity rate is preferably 50% or more. Furthermore, the proximity rate is more preferably 70% or more, and even more preferably 90% or more.

[0124] The relationship between the 4th through hole and the 4th through conductor, and the relationship between the 5th through hole and the 5th through conductor are the same.

[0125] Similar to the embodiment described above focusing on two specific through holes, in the embodiment focusing on three specific through holes, it is also possible to prevent the through conductors inserted into the through holes from deforming the substrate and moving in the planar direction of the substrate when an outward stress is applied to the through conductors. Therefore, it is possible to make a through conductor-embedded substrate that prevents the through conductors inserted into the through holes from moving under thermal stress.

[0126] Next, an example illustrating the positional relationship between the through-hole and the through conductor relative to the metal layer will be given.

[0127] First, we will describe an implementation method that focuses on two specific through holes inserted into a through hole with a through conductor.

[0128] In the through conductor embedded substrate of the present invention, the metal layer may also have a length direction, and the first reference line extends along the length direction.

[0129] Figure 7 It is a top view showing the positional relationship between the two through holes and the through conductor and the metal layer.

[0130] exist Figure 7 In order to show the positional relationship between the through-hole and the through conductor and the metal layer, the through-hole and the through conductor are shown together with the metal layer through the metal layer.

[0131] Figure 7 The diagram shows a metal layer 71 on the first main surface side of the substrate, a first through hole 21 and a first through conductor 31 inserted into the first through hole 21, a second through hole 22 and a second through conductor 32 inserted into the second through hole 22. Additionally, a first reference line 41 is also shown.

[0132] The metal layer 71 has a rectangular shape when viewed from above, and this metal layer 71 has a length direction. The length direction is along the long side of the rectangle. Figure 7 The double arrow L is used to indicate the length direction.

[0133] exist Figure 7 In the configuration shown, the first reference line 41 is along the length direction L of the metal layer 71. In this specification, "reference line along the length direction" means the reference line is parallel to the length direction or slightly deviates from parallel. If the angle (acute angle) between the reference line and the length direction is 5° or less, it is considered that the reference line is along the length direction.

[0134] The length direction of the metal layer is the direction in which the force that causes the conductor to move increases when thermal stress is applied to the conductor inserted into the two through holes.

[0135] Considering the first through-hole 21, if the first reference line 41 is along the length direction L of the metal layer 71, it can be said that the first through-hole 21, the first through conductor 31, the first intersection 101, and the eleventh intersection 111 are all along the length direction L of the metal layer 71. Furthermore, the movement of the first through conductor 31 along the length direction of the metal layer 71 under thermal stress can be described as the first through conductor moving towards the first intersection 101 along the first reference line 41. In the through conductor embedded substrate of the present invention, since the first through conductor 31 is in contact with or near the first intersection 101, movement of the first through conductor 31 in that direction can be suppressed.

[0136] Based on the above, the metal layer has a length direction, and the first reference line extends along the length direction, so that the direction in which the through conductor is to move under the action of thermal stress applied to the substrate of the through conductor is consistent with the direction in which the through conductor can be effectively prevented from moving under the action of thermal stress. Therefore, it is possible to more effectively prevent the through conductor inserted into the through hole from moving under the action of thermal stress.

[0137] Furthermore, the two through holes and the through conductor are preferably located near both ends of the metal layer along its length. This positioning allows for a more effective utilization of the through conductor embedded in the substrate structure of the present invention.

[0138] That is, preferably, when the straight line from the center of the first through hole to the end of the metal layer, starting from the center of the metal layer, is taken as the sixth reference line, the center of the first through hole is located on the sixth reference line in a region on the side where the distance from the center of the metal layer is greater than the distance from the end of the metal layer; and when the straight line from the center of the second through hole to the end of the metal layer, starting from the center of the metal layer, is taken as the seventh reference line, the center of the second through hole is located on the seventh reference line in a region on the side where the distance from the center of the metal layer is greater than the distance from the end of the metal layer.

[0139] Furthermore, in this specification, the center of gravity of the metal layer is defined as the center of gravity of the flat plate (the smallest rectangle defined in a manner that includes all the wiring constituting the metal layer) formed by removing the outer edge of the metal layer.

[0140] Figure 8 This is a top view showing the positional relationship between the two through holes and the through conductor and the metal layer. It shows the relationship with... Figure 7 The same positional relationship diagram, but relative to... Figure 7 The diagram of the baseline has been changed.

[0141] Figure 8 The sixth reference line 46 is shown, which is a straight line starting from the center of gravity G of the metal layer 71, passing through the center C1 of the first through hole 21, and reaching the end 76 of the metal layer. The seventh reference line 47 is also shown, which is a straight line starting from the center of gravity G of the metal layer 71, passing through the center C2 of the second through hole 22, and reaching the end 77 of the metal layer.

[0142] The center C1 of the first through hole 21 is located on the sixth reference line 46 in a region on the side where the distance from the centroid G of the metal layer 71 is greater than the distance from the end 76 of the metal layer 71. This means that when the region is divided into the centroid G side and the end 76 side with the midpoint M6 of the sixth reference line 46 as the boundary point, the center C1 of the first through hole 21 is located in the region on the end 76 side.

[0143] Similarly, the center C2 of the second through hole 22 is located on the 7th reference line 47 in a region on the side where the distance from the centroid G of the metal layer 71 is greater than the distance from the end 77 of the metal layer 71. This means that when the region is divided into the centroid G side and the end 77 side with the midpoint M7 of the 7th reference line 47 as the boundary point, the center C2 of the second through hole 22 is located in the region on the end 77 side.

[0144] With the two through holes and the through conductor located near the two ends of the metal layer along its length, the structural effect of the through conductor embedded in the substrate of the present invention can be more effectively utilized. Therefore, as defined above, the first through hole 21 is located in the region near the end 76, and the second through hole 22 is located in the region near the end 77, thereby enabling the effects of the present invention to be utilized more effectively.

[0145] Next, as an example of the positional relationship between the through-hole and the through conductor relative to the metal layer, an implementation of a specific three through-holes with through conductors inserted will be described.

[0146] When considering the specific three through-holes, it is preferable that all three through-holes are located near the ends of the metal layer. This positional relationship allows for a more effective utilization of the through-conductor embedded substrate structure of the present invention.

[0147] That is, preferably, when the straight line from the center of the metal layer to the end of the metal layer through the center of the third through hole is set as the eighth reference line, the center of the third through hole is located on the eighth reference line in a region where the distance from the center of the metal layer to the center of the metal layer is greater than the distance from the end of the metal layer; when the straight line from the center of the metal layer to the end of the metal layer through the center of the fourth through hole is set as the ninth reference line, the center of the fourth through hole is located on the ninth reference line in a region where the distance from the center of the metal layer to the center of the metal layer is greater than the distance from the end of the metal layer; and when the straight line from the center of the metal layer to the end of the metal layer through the center of the fifth through hole is set as the tenth reference line, the center of the fifth through hole is located on the tenth reference line in a region where the distance from the center of the metal layer to the center of the metal layer is greater than the distance from the end of the metal layer.

[0148] Figure 9 It is a top view showing the positional relationship between the three through holes and the through conductor and the metal layer.

[0149] Figure 9The eighth reference line 48 is shown, which is a straight line from the center of gravity G of metal layer 71 through the center C3 of the third through hole 23 to the end 78 of the metal layer. The ninth reference line 49 is shown, which is a straight line from the center of gravity G of metal layer 71 and the center C4 of the fourth through hole 24 to the end 79 of the metal layer. The tenth reference line 50 is shown, which is a straight line from the center of gravity G of metal layer 71 and the center C5 of the fifth through hole 25 to the end 80 of the metal layer.

[0150] The center C3 of the third through hole 23 is located on the eighth reference line 48 in a region on the side where the distance from the centroid G of the metal layer 71 is greater than the distance from the end 78 of the metal layer 71. This means that when the region is divided into the centroid G side and the end 78 side with the midpoint M8 of the eighth reference line 48 as the boundary point, the center C3 of the third through hole 23 is located in the region on the end 78 side.

[0151] Similarly, the center C4 of the fourth through hole 24 is located on the 9th reference line 49 in a region on the side where the distance from the centroid G of the metal layer 71 is greater than the distance from the end 79 of the metal layer 71. This means that when the region is divided into the centroid G side and the end 79 side with the midpoint M9 of the 9th reference line 49 as the boundary point, the center C4 of the fourth through hole 24 is located in the region on the end 79 side.

[0152] Similarly, the center C5 of the fifth through hole 25 is located on the 10th reference line 50 in a region on the side where the distance from the centroid G of the metal layer 71 is greater than the distance from the end 80 of the metal layer 71. This means that when the region is divided into the centroid G side and the end 80 side with the midpoint M10 of the 10th reference line 50 as the boundary point, the center C5 of the fifth through hole 25 is located in the region on the end 80 side.

[0153] With the three through holes and the through conductor located near the ends of the metal layer, the structural effect of the through conductor embedded in the substrate of the present invention can be more effectively utilized. Therefore, as defined above, the third through hole 23 is located in the region near the end 78, the fourth through hole 24 is located in the region near the end 79, and the fifth through hole 25 is located in the region near the end 80, thereby enabling the effects of the present invention to be utilized more effectively.

[0154] Next, examples of the positional relationships of through holes and through conductors relative to the metal layer in a cross-sectional view along the thickness direction will be explained.

[0155] In the through conductor embedded substrate of the present invention, at least one through conductor may contact the inner peripheral wall line of the through hole into which the through conductor is inserted in a thickness direction section along the direction connecting the first main surface and the second main surface of the substrate.

[0156] Figure 10It is a cross-sectional view schematically showing the shape of the contact between the through conductor and the inner peripheral wall of the through hole into which it is inserted.

[0157] Figure 10 The cross-sectional view shown is a thickness-direction cross-sectional view along the direction connecting the first main surface 11 and the second main surface 12 of the substrate 10.

[0158] The through conductor 30 is inserted into the through hole 20, and the side of the through conductor 30 is aligned with the line representing the inner peripheral wall 26 of the through hole 20. This forms a line contact.

[0159] Both the through hole 20 and the through conductor 30 are circular in top view, but their diameters are different. Therefore, when the through hole 20 and the through conductor 30 are in contact, it is not a surface contact but a line contact. When the through conductor 30 is in line contact with the inner peripheral wall 26 of the through hole 20, it can more effectively prevent the through conductor 30 inserted into the through hole 20 from moving under the action of thermal stress.

[0160] Alternatively, it can be multiple through holes provided in the substrate of the through conductor and all through holes in the through conductor in contact with the inner peripheral wall of the through conductor, or it can be a portion of the through holes in contact with the inner peripheral wall of the through conductor.

[0161] Alternatively, in the through conductor embedded substrate of the present invention, in the thickness direction section along the direction connecting the first main surface and the second main surface of the substrate, the length of at least one through conductor along the thickness direction is shorter than the length of the through hole into which the through conductor is inserted along the thickness direction, and the at least one through conductor contacts or approaches the inner peripheral wall of the through hole at a position separated from the end of the through hole into which the through conductor is inserted in the thickness direction.

[0162] Figure 11 It is a cross-sectional view schematically showing a shape where the length of the through conductor is shorter than the length of the through hole.

[0163] Figure 11 The cross-sectional view shown is a thickness-direction cross-sectional view along the direction connecting the first main surface 11 and the second main surface 12 of the substrate 10.

[0164] A through conductor 30 is inserted into a through hole 20, and the length of the through conductor 30 along the thickness direction is shorter than the length of the through hole 20 along the thickness direction. Therefore, the metal layer 71 enters the through hole 20 in a manner that is in contact with the upper surface 36 of the through conductor 30.

[0165] The contact point 37 of the through conductor 30, which is separated from the end 27 of the through hole 20 in the thickness direction, contacts the inner peripheral wall 26 of the through hole 20. It can be said that the side of the through conductor 30 is not parallel to the inner peripheral wall of the through hole 20, and the through conductor 30 is inclined within the through hole 20.

[0166] In this configuration, because the through conductor 30 contacts the surface of the substrate 10, i.e., the inner peripheral wall 26 of the through hole 20, at the contact point 37, it can prevent the through conductor 30 inserted into the through hole 20 from moving under thermal stress.

[0167] Alternatively, the through conductor can also approach the inner peripheral wall of the through hole at a position separate from the end of the through hole in the thickness direction where the through conductor is inserted. The definition of proximity between the inner peripheral wall and the through conductor is as described above. The shortest distance between the through conductor and the inner peripheral wall of the through hole is determined by taking the point where the distance between the inclined through conductor and the inner peripheral wall of the through hole in the thickness direction cross-sectional view is the closest point, and it is then determined whether the inner peripheral wall and the through conductor are close.

[0168] Alternatively, the length of all the through-holes in the through-conductor embedded substrate and the through-conductor along the thickness direction may be shorter than the length of the through-hole into which the through-conductor is inserted along the thickness direction. The through-conductor is in contact with or close to the inner peripheral wall of the through-hole at a position that is separated from the end of the through-hole into which the through-conductor is inserted along the thickness direction.

[0169] Alternatively, a portion of the through conductor may have a thickness-direction length shorter than the thickness-direction length of the through hole into which the through conductor is inserted, and this portion of the through conductor may contact or be close to the inner peripheral wall of the through hole at a position separate from the end of the through hole into which the through conductor is inserted.

[0170] Next, examples of the surface conditions of through holes and through conductors in the cross-sectional view in the thickness direction will be explained.

[0171] In the through conductor embedded substrate of the present invention, unevenness may also be provided on the side of the through conductor. In addition, the unevenness provided on the through conductor may be 1 μm or more in terms of surface roughness Ra.

[0172] Figure 12 It is a schematic cross-sectional view showing a concave-convex shape on the side of a conductor.

[0173] Figure 12The diagram shows a form where a protrusion 38 is provided on the side of the through conductor 30. When a protrusion 38 is provided on the side of the through conductor 30, an anchoring effect is generated at the contact surface between the through conductor 30 and the surrounding resin 60, the bond between the through conductor 30 and the resin 60 is strengthened, and an undesirable pattern such as the through conductor 30 detaching from the resin 60 is prevented.

[0174] The protrusions 38 on the side of the conductor 30 can be provided on the entire side of the conductor 30 or on a part of the side.

[0175] Furthermore, the size of the unevenness 38 on the side surface of the through conductor 30 can be 1 μm or more, measured in terms of surface roughness Ra. Alternatively, it can be 10 μm or less, measured in terms of surface roughness Ra. The surface roughness can be measured by taking a cross-sectional photograph of the side surface including the through conductor and using image analysis.

[0176] In the through-conductor embedded substrate of the present invention, unevenness may also be provided on the inner peripheral wall of the through hole. In addition, the unevenness provided on the inner peripheral wall of the through hole may be 1 μm or more in terms of surface roughness Ra.

[0177] Figure 13 It is a schematic cross-sectional view showing the concave and convex shape of the inner peripheral wall of the through hole.

[0178] Figure 13 The diagram shows the form in which the inner peripheral wall 26 of the through hole 20 has a protrusion 28. When the inner peripheral wall 26 of the through hole 20 has a protrusion 28, an anchoring effect is created at the contact surface between the through hole 20 and the resin 60 inside. The bond between the inner peripheral wall 26 of the through hole 20 and the resin 60 is strengthened, preventing the resin 60 from detaching from the through hole 20 and preventing the conductor 30 from detaching along with the resin 60, thus avoiding undesirable conditions.

[0179] The protrusions and depressions 28 of the inner peripheral wall 26 of the through hole 20 can be provided on the entire inner peripheral wall 26 of the through hole 20, or on a part of the inner peripheral wall 26.

[0180] Furthermore, the size of the unevenness 28 of the inner peripheral wall 26 of the through hole 20, measured by surface roughness Ra, can be 1 μm or more. Alternatively, it can be 50 μm or less, measured by surface roughness Ra. Surface roughness can be measured by taking a cross-sectional photograph of the inner peripheral wall including the through hole and using image analysis.

[0181] Alternatively, protrusions and depressions can be provided on the side of the through conductor and also on the inner peripheral wall of the through hole. If protrusions and depressions are provided on both, the bonding between the through conductor and the inner peripheral wall of the through hole and the resin is strengthened, which is therefore more ideal. In this case, the sizes of the protrusions and depressions can be the same or different.

[0182] Methods for creating irregularities on the side of a conductor or the inner wall of a through hole include physical processing such as cutting and sandblasting, and chemical processing such as etching, but the method is not limited.

[0183] The manufacturing method of the through conductor embedded substrate of the present invention is not particularly limited, and can be manufactured by the following method: preparing a substrate having a plurality of through holes, inserting through conductors into the through holes, filling the space inside the through holes with resin, and depositing metal layers on the first main surface and the second main surface of the substrate.

[0184] In this process, the through conductor embedded substrate of the present invention can be made by mounting the component (mounting the through conductor) off-center from the center of the through hole by positioning the component mounting machine.

[0185] The following information is disclosed in this specification.

[0186] <1>

[0187] A through-conductor embedded substrate, characterized in that,

[0188] The through-conductor's built-in substrate has:

[0189] A substrate having a first main surface and a second main surface opposite to the first main surface, and having a plurality of through holes extending from the first main surface to the second main surface;

[0190] A through conductor, which is inserted into the through hole; and

[0191] A metal layer, extending in the same planar direction as the first main surface, is connected to the through conductor.

[0192] The through hole includes a first through hole and a second through hole, wherein the first through hole and the second through hole are different through holes.

[0193] The through conductor includes a first through conductor inserted into the first through hole and a second through conductor inserted into the second through hole.

[0194] Both the first through conductor and the second through conductor are connected to the metal layer.

[0195] When the straight line passing through the center of the first through hole and the center of the second through hole is set as the first reference line,

[0196] The first intersection point, which is the point on the side furthest from the second through hole, where the inner peripheral wall of the first through hole intersects with the first reference line, is in contact with or close to the first through conductor.

[0197] The second intersection point, which is the point on the side furthest from the first through hole from the intersection of the inner peripheral wall of the second through hole and the first reference line, is in contact with or close to the second through conductor.

[0198] <2>

[0199] A through-conductor embedded substrate, characterized in that,

[0200] The through-conductor's built-in substrate has:

[0201] A substrate having a first main surface and a second main surface opposite to the first main surface, and having a plurality of through holes extending from the first main surface to the second main surface;

[0202] A through conductor, which is inserted into the through hole; and

[0203] A metal layer, extending in the same planar direction as the first main surface, is connected to the through conductor.

[0204] The through hole includes a third through hole, a fourth through hole, and a fifth through hole, wherein the third through hole, the fourth through hole, and the fifth through hole are different through holes.

[0205] The through conductor includes a third through conductor inserted into the third through hole, a fourth through conductor inserted into the fourth through hole, and a fifth through conductor inserted into the fifth through hole.

[0206] The third through conductor, the fourth through conductor, and the fifth through conductor are all connected to the metal layer.

[0207] When the straight line passing through the center of the third through hole and the center of the fourth through hole is set as the third reference line, the straight line passing through the center of the fourth through hole and the center of the fifth through hole is set as the fourth reference line, and the straight line passing through the center of the fifth through hole and the center of the third through hole is set as the fifth reference line,

[0208] The portion between the intersection of the inner peripheral wall of the third through hole and the third reference line on the side away from the fourth through hole (i.e., the third intersection point) and the intersection of the inner peripheral wall of the third through hole and the fifth reference line on the side away from the fifth through hole (i.e., the fourth intersection point) is in contact with or close to the third through conductor.

[0209] The portion between the intersection of the inner peripheral wall of the fourth through hole and the fourth reference line on the side away from the fifth through hole (i.e., the fifth intersection point) and the intersection of the inner peripheral wall of the fourth through hole and the third reference line on the side away from the third through hole (i.e., the sixth intersection point) is in contact with or close to the fourth through conductor.

[0210] The portion between the intersection of the inner peripheral wall of the fifth through hole and the fifth reference line, on the side away from the third through hole (the seventh intersection), and the intersection of the inner peripheral wall of the fifth through hole and the fourth reference line, on the side away from the fourth through hole (the eighth intersection), is in contact with or close to the fifth through conductor.

[0211] <3>

[0212] According to the through conductor embedded substrate described in <1>, wherein...

[0213] The metal layer has a length direction, and the first reference line extends along the length direction.

[0214] <4>

[0215] According to the through conductor embedded substrate described in <1> or <3>, wherein,

[0216] When the sixth reference line is defined as the straight line from the center of gravity of the metal layer through the center of the first through hole to the end of the metal layer, the center of the first through hole is located on the sixth reference line in a region on the side where the distance from the center of gravity of the metal layer is greater than the distance from the end of the metal layer.

[0217] When the seventh reference line is defined as the straight line from the center of gravity of the metal layer through the center of the second through hole to the end of the metal layer, the center of the second through hole is located on the seventh reference line in a region on the side where the distance from the center of gravity of the metal layer is greater than the distance from the end of the metal layer.

[0218] <5>

[0219] According to the through conductor embedded substrate described in <2>, wherein...

[0220] When the eighth reference line is defined as the straight line from the center of gravity of the metal layer through the center of the third through hole to the end of the metal layer, the center of the third through hole is located on the eighth reference line in a region on the side where the distance from the center of gravity of the metal layer is greater than the distance from the end of the metal layer.

[0221] When the 9th reference line is defined as the straight line from the center of gravity of the metal layer through the center of the 4th through hole to the end of the metal layer, the center of the 4th through hole is located on the 9th reference line in a region on the side where the distance from the center of gravity of the metal layer is greater than the distance from the end of the metal layer.

[0222] When the 10th reference line is defined as the straight line from the center of gravity of the metal layer through the center of the 5th through hole to the end of the metal layer, the center of the 5th through hole is located on the 10th reference line in a region on the side where the distance from the center of gravity of the metal layer is greater than the distance from the end of the metal layer.

[0223] <6> The through conductor embedded substrate according to any one of <1> to <5>, wherein,

[0224] In the thickness direction section along the direction connecting the first main surface and the second main surface of the substrate,

[0225] At least one of the through conductors is in contact with the inner peripheral wall of the through hole into which the through conductor is inserted.

[0226] <7> The through conductor embedded substrate according to any one of <1> to <6>, wherein,

[0227] In the thickness direction section along the direction connecting the first main surface and the second main surface of the substrate,

[0228] At least one of the through conductors has a thickness-direction length shorter than the thickness-direction length of the through hole into which the through conductor is inserted, and the at least one through conductor contacts or approaches the inner peripheral wall of the through hole at a position separate from the end of the through hole into which the through conductor is inserted in the thickness direction.

[0229] <8> The through conductor embedded substrate according to any one of <1> to <7>, wherein,

[0230] One of the metal layers is connected to more than 30 of the through conductors.

[0231] In the through conductors connected to the metal layer, the proportion of through conductors in which the center of the through hole into which the through conductor is inserted is offset from the center of the through conductor itself, is 10% or more.

[0232] <9> The through conductor embedded substrate according to any one of <1> to <8>, wherein,

[0233] Resin is filled between the through conductor and the through hole into which the through conductor is inserted.

[0234] <10> According to <9>, the through conductor embedded substrate, wherein,

[0235] The resin is epoxy resin, silicone resin, acrylic resin or polyimide resin.

[0236] <11> The through conductor embedded substrate according to any one of <1> to <10>, wherein,

[0237] The side of the through conductor is provided with protrusions and recesses.

[0238] <12> According to <11>, the through conductor embedded substrate, wherein,

[0239] The unevenness of the through conductor is set to be 1 μm or more in terms of surface roughness Ra.

[0240] <13> The through conductor embedded substrate according to any one of <1> to <12>, wherein,

[0241] The inner peripheral wall of the through hole is provided with concave and convex shapes.

[0242] <14> The through conductor embedded substrate according to any one of <1> to <13>, wherein,

[0243] The through conductor is made of metallic material.

[0244] <15> The through conductor embedded substrate according to any one of <1> to <14>, wherein,

[0245] The substrate is a glass substrate.

[0246] Explanation of reference numerals in the attached figures

[0247] 1. Through conductor embedded in substrate; 10. Substrate; 11. First main surface; 12. Second main surface; 20. Through hole; 21. First through hole; 22. Second through hole; 23. Third through hole; 24. Fourth through hole; 25. Fifth through hole; 26. Inner peripheral wall of through hole; 27. End of through hole in thickness direction; 28. Unevenness of inner peripheral wall of through hole; 30. Through conductor; 31. First through conductor; 31r. Closest point of first through conductor; 32. Second through conductor; 33. Third through conductor Body; 33r, the closest point of the 3rd through conductor; 34, the 4th through conductor; 35, the 5th through conductor; 36, the upper surface of the through conductor; 37, the contact point of the through conductor; 38, the unevenness of the side surface of the through conductor; 41, the 1st reference line; 43, the 3rd reference line; 44, the 4th reference line; 45, the 5th reference line; 46, the 6th reference line; 47, the 7th reference line; 48, the 8th reference line; 49, the 9th reference line; 50, the 10th reference line; 60, resin; 70, metal layer; 71, the substrate. 72. Metal layer on the first main surface side of the substrate; 76, 77, 78, 79, 80. Ends of the metal layers; 101. First intersection point; 102. Second intersection point; 103. Third intersection point; 104. Fourth intersection point; 105. Fifth intersection point; 106. Sixth intersection point; 107. Seventh intersection point; 108. Eighth intersection point; 111. Eleventh intersection point; 112. Twelfth intersection point; 113. Thirteenth intersection point; 114. Fourteenth intersection point; 115. Fifteenth intersection point; 116. Sixteenth intersection point; Intersection points; 117, 17th intersection point; 118, 18th intersection point; 120, unnoticed through hole; 130, unnoticed through conductor; C1, center of the 1st through hole; C2, center of the 2nd through hole; C3, center of the 3rd through hole; C4, center of the 4th through hole; C5, center of the 5th through hole; G, centroid of the metal layer; R1, shortest distance between the through conductor and the inner wall of the through hole; R2, longest distance between the through conductor and the inner wall of the through hole; M6, M7, M8, M9, M10, midpoint.

Claims

1. A through-conductor embedded substrate, characterized in that, The through-conductor's built-in substrate has: A substrate having a first main surface and a second main surface opposite to the first main surface, and having a plurality of through holes extending from the first main surface to the second main surface; A through conductor is inserted into the through hole; as well as A metal layer, extending in the same planar direction as the first main surface, is connected to the through conductor. The through hole includes a first through hole and a second through hole, wherein the first through hole and the second through hole are different through holes. The through conductor includes a first through conductor inserted into the first through hole and a second through conductor inserted into the second through hole. Both the first through conductor and the second through conductor are connected to the metal layer. When the straight line passing through the center of the first through hole and the center of the second through hole is set as the first reference line, The first intersection point, which is the point on the side furthest from the second through hole, where the inner peripheral wall of the first through hole intersects with the first reference line, is in contact with or close to the first through conductor. The second intersection point, which is the point on the side furthest from the first through hole from the intersection of the inner peripheral wall of the second through hole and the first reference line, is in contact with or close to the second through conductor.

2. A through-conductor embedded substrate, characterized in that, The through-conductor's built-in substrate has: A substrate having a first main surface and a second main surface opposite to the first main surface, and having a plurality of through holes extending from the first main surface to the second main surface; A through conductor, which is inserted into the through hole; and A metal layer, extending in the same planar direction as the first main surface, is connected to the through conductor. The through hole includes a third through hole, a fourth through hole, and a fifth through hole, wherein the third through hole, the fourth through hole, and the fifth through hole are different through holes. The through conductor includes a third through conductor inserted into the third through hole, a fourth through conductor inserted into the fourth through hole, and a fifth through conductor inserted into the fifth through hole. The third through conductor, the fourth through conductor, and the fifth through conductor are all connected to the metal layer. When the straight line passing through the center of the third through hole and the center of the fourth through hole is set as the third reference line, the straight line passing through the center of the fourth through hole and the center of the fifth through hole is set as the fourth reference line, and the straight line passing through the center of the fifth through hole and the center of the third through hole is set as the fifth reference line, The portion between the intersection of the inner peripheral wall of the third through hole and the third reference line on the side away from the fourth through hole (i.e., the third intersection point) and the intersection of the inner peripheral wall of the third through hole and the fifth reference line on the side away from the fifth through hole (i.e., the fourth intersection point) is in contact with or close to the third through conductor. The portion between the intersection of the inner peripheral wall of the fourth through hole and the fourth reference line on the side away from the fifth through hole (i.e., the fifth intersection point) and the intersection of the inner peripheral wall of the fourth through hole and the third reference line on the side away from the third through hole (i.e., the sixth intersection point) is in contact with or close to the fourth through conductor. The portion between the intersection of the inner peripheral wall of the fifth through hole and the fifth reference line, on the side away from the third through hole (the seventh intersection), and the intersection of the inner peripheral wall of the fifth through hole and the fourth reference line, on the side away from the fourth through hole (the eighth intersection), is in contact with or close to the fifth through conductor.

3. The through-conductor embedded substrate according to claim 1, wherein, The metal layer has a length direction, and the first reference line extends along the length direction.

4. The through-conductor embedded substrate according to claim 1 or 3, wherein, When the sixth reference line is defined as the straight line from the center of gravity of the metal layer through the center of the first through hole to the end of the metal layer, the center of the first through hole is located on the sixth reference line in a region on the side where the distance from the center of gravity of the metal layer is greater than the distance from the end of the metal layer. When the seventh reference line is defined as the straight line from the center of gravity of the metal layer through the center of the second through hole to the end of the metal layer, the center of the second through hole is located on the seventh reference line in a region on the side where the distance from the center of gravity of the metal layer is greater than the distance from the end of the metal layer.

5. The through-conductor embedded substrate according to claim 2, wherein, When the eighth reference line is defined as the straight line from the center of gravity of the metal layer through the center of the third through hole to the end of the metal layer, the center of the third through hole is located on the eighth reference line in a region on the side where the distance from the center of gravity of the metal layer is greater than the distance from the end of the metal layer. When the 9th reference line is defined as the straight line from the center of gravity of the metal layer through the center of the 4th through hole to the end of the metal layer, the center of the 4th through hole is located on the 9th reference line in a region on the side where the distance from the center of gravity of the metal layer is greater than the distance from the end of the metal layer. When the 10th reference line is defined as the straight line from the center of gravity of the metal layer through the center of the 5th through hole to the end of the metal layer, the center of the 5th through hole is located on the 10th reference line in a region on the side where the distance from the center of gravity of the metal layer is greater than the distance from the end of the metal layer.

6. The through-conductor embedded substrate according to any one of claims 1 to 5, wherein, In the thickness direction section along the direction connecting the first main surface and the second main surface of the substrate, At least one of the through conductors is in contact with the inner peripheral wall of the through hole into which the through conductor is inserted.

7. The through-conductor embedded substrate according to any one of claims 1 to 6, wherein, In the thickness direction section along the direction connecting the first main surface and the second main surface of the substrate, At least one of the through conductors has a thickness-direction length shorter than the thickness-direction length of the through hole into which the through conductor is inserted, and the at least one through conductor contacts or approaches the inner peripheral wall of the through hole at a position separate from the end of the through hole into which the through conductor is inserted in the thickness direction.

8. The through-conductor embedded substrate according to any one of claims 1 to 7, wherein, One of the metal layers is connected to more than 30 of the through conductors. In the through conductors connected to the metal layer, the proportion of through conductors in which the center of the through hole into which the through conductor is inserted is offset from the center of the through conductor itself, is 10% or more.

9. The through-conductor embedded substrate according to any one of claims 1 to 8, wherein, Resin is filled between the through conductor and the through hole into which the through conductor is inserted.

10. The through-conductor embedded substrate according to claim 9, wherein, The resin is epoxy resin, silicone resin, acrylic resin or polyimide resin.

11. The through-conductor embedded substrate according to any one of claims 1 to 10, wherein, The side of the through conductor is provided with protrusions and recesses.

12. The through-conductor embedded substrate according to claim 11, wherein, The unevenness of the through conductor is set to be 1 μm or more in terms of surface roughness Ra.

13. The through-conductor embedded substrate according to any one of claims 1 to 12, wherein, The inner peripheral wall of the through hole is provided with concave and convex shapes.

14. The through-conductor embedded substrate according to any one of claims 1 to 13, wherein, The through conductor is made of metallic material.

15. The through-conductor embedded substrate according to any one of claims 1 to 14, wherein, The substrate is a glass substrate.

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