Heat dissipation type power semiconductor with folded fin radiator

Abstract

The heat dissipation type power semiconductor component comprises a semiconductor bare chip; a plurality of pin terminals, the plurality of pin terminals being electrically coupled to the semiconductor die; a package body at least partially surrounding the semiconductor die and the plurality of pin terminals; and a heat sink coupled to the assembly, the heat sink including a fin set having a plurality of fin members configured to receive a cooling fluid.

Description

Technical Field

[0001] This disclosure relates to a heat-sinked power semiconductor with a folded fin heat sink. Background Technology

[0002] This disclosure relates to power semiconductors used in rotating electric machines. Power semiconductors can be used in a variety of applications, such as inverting direct current (DC) power to angularly shift the rotor assembly relative to the stator assembly of a rotating electric machine. Inverting DC power generates a significant amount of heat, which can reduce the operating efficiency of the rotating electric machine. Cooling the power semiconductors would be helpful. Summary of the Invention

[0003] In one embodiment of this disclosure, a heat-dissipating power semiconductor assembly includes: a semiconductor die; a plurality of pin terminals electrically connected to the semiconductor die; a package body at least partially surrounding the semiconductor die and the plurality of pin terminals; and a heat sink connected to the assembly, the heat sink including a fin group having a plurality of fin members configured to receive cooling fluid.

[0004] In one embodiment of this disclosure, a heat-dissipating power semiconductor assembly includes: a semiconductor die; a plurality of pin terminals electrically connected to the semiconductor die; a package body at least partially surrounding the semiconductor die and the plurality of pin terminals; a heat sink including a fin assembly having a plurality of fin members configured to receive cooling fluid; and a heat sink base having a pair of first walls and a pair of second walls, wherein the fin assembly is received within the pair of first walls and the pair of second walls.

[0005] In one embodiment of this disclosure, a heat-dissipating power semiconductor assembly includes: a semiconductor die; a plurality of pin terminals electrically connected to the semiconductor die; a package body at least partially surrounding the semiconductor die and the plurality of pin terminals; a heat sink connected to the assembly, the heat sink including a fin assembly having a plurality of fin members configured to receive cooling fluid; a sealing gasket connected to the fin assembly, the sealing gasket being formed of a compressible material; and an inverter mounting member having a plurality of cavities shaped to receive the heat-dissipating power semiconductor, each of the cavities having a first side that is not parallel to a second side relative to the first side, such that the first side engages a surface of the sealing gasket and biases the sealing gasket to engage with the fin assembly. Attached Figure Description

[0006] The accompanying drawings described herein are for illustrative purposes only, for the purposes of selecting embodiments and not all possible implementations, and are not intended to limit the scope of this disclosure.

[0007] Figure 1 This is a perspective view of a heat-dissipating power semiconductor constructed in accordance with the teachings of this disclosure; Figure 2 yes Figure 1 Side view of a heat-dissipating power semiconductor; Figure 3 yes Figure 1 Front view of a heat-dissipating power semiconductor; Figure 4 yes Figure 1 A three-dimensional view of a portion of a heat-dissipating power semiconductor. Figure 4 The construction of power semiconductors is shown in more detail; Figure 5 yes Figure 1 A three-dimensional view of a portion of a heat-dissipating power semiconductor. Figure 5 The radiator is shown in more detail; Figure 6 This is a side view of the radiator; Figure 7 This is a bottom view of the radiator; Figure 8 It uses multiple Figure 1 A three-dimensional view of a portion of an inverter using heat-dissipating power semiconductors; Figure 9 It uses multiple Figure 1 A three-dimensional view of a portion of an inverter using heat-dissipating power semiconductors; Figure 10 yes Figure 9 An enlarged portion; Figure 11 This is a perspective view of an implementation scheme for a heat-dissipating power semiconductor; Figure 12 This is a perspective view of an implementation scheme for a heat-dissipating power semiconductor. Figure 13 This is a perspective view of an implementation scheme for a heat-dissipating power semiconductor; Figure 14 This is a perspective view of an implementation scheme for a heat-dissipating power semiconductor; Figure 15 This is a perspective view of an implementation scheme for a heat-dissipating power semiconductor; Figure 16 This is a perspective view of an implementation scheme for a heat-dissipating power semiconductor; and Figure 17 This is a cross-sectional view of an implementation scheme for a heat-dissipating power semiconductor.

[0008] In several views of the accompanying drawings, corresponding reference numerals indicate the corresponding parts. Detailed Implementation

[0009] refer to Figures 1 to 3 An exemplary heat-dissipating power semiconductor is generally indicated by reference numeral 10. The heat-dissipating power semiconductor 10 may include a power semiconductor 12 and a heat sink 14.

[0010] refer to Figures 1 to 4 The power semiconductor 12 can be any type of power semiconductor, such as a transistor. For example, the power semiconductor 12 can be an insulated-gate bipolar transistor (IGBT), but in the specific example provided, it is a metal-oxide-semiconductor field-effect transistor (MOSFET). The power semiconductor 12 may include a semiconductor die 20, a plurality of pin terminals 22, a board terminal 24, and a package body 26. The semiconductor die 20 may have a plurality of semiconductor terminals (not specifically shown), each of which is electrically connected to an associated one of the pin terminals 22. In the example provided, the semiconductor die 20 has four semiconductor terminals, including a gate (not specifically shown), a source sensor (not specifically shown), a source (not specifically shown), and a drain (not specifically shown). Each of the pin terminals 22 is formed of a conductive metal material such as copper and can be electrically connected to an associated one of the semiconductor terminals. For example, each of the pin terminals 22 can be bonded to an associated one of the semiconductor terminals using a soldering material, thereby electrically and physically connecting the pin terminals 22 to an associated one of the semiconductor terminals. Alternatively, one or more bonding wires 30 may be used to electrically connect one of the pin terminals 22 to an associated one of the semiconductor terminals. A board terminal 24 may be electrically connected to one of the pin terminals 22 and may be directly mounted to one of the semiconductor terminals. In the provided example, pin terminal 22a is electrically connected to the gate, pin terminal 22b is electrically connected to the source sensing element, pin terminal 22c is electrically connected to the source, and pin terminal 22d is electrically connected to both the drain and board terminal 24. The board terminal 24 is formed of a suitable conductive metal material, such as copper. The package body 26 is formed of a package material disposed above the semiconductor die 20. The semiconductor die 20 and bonding wires 30 are completely encapsulated in the package material, and the pin terminals 22 are partially encapsulated in the package material. Alternatively, the board terminal 24 may be partially encapsulated in the package material.

[0011] refer to Figures 5 to 7The radiator 14 may have a body or radiator base 40 and a fin assembly 42 fixedly connected to and projecting outward from the radiator base 40. The radiator base 40 may be formed of a suitable material such as copper and may be shaped to receive the fin assembly 42. In this respect, the radiator base 40 defines a recess or cavity 44 in which the fin assembly 42 may be received. The cavity 44 is open at at least two ends to allow cooling fluid to flow through it.

[0012] In the specific example provided, the radiator base 40 has a rectangular tubular configuration with a pair of first walls 46 parallel to each other and a pair of second walls 48 parallel to each other and perpendicular to the first walls 46. Each of the second walls 48 is fixedly connected to a corresponding end of the first wall 46. It should be understood that the radiator base 40 may be formed of tubular material with different cross-sectional shapes (e.g., triangular, circular, square, elliptical), or the radiator base 40 may be formed such that one or more sides of the radiator base 40 are at least partially "open," for example, formed as a channel.

[0013] The fin assembly 42 may define a plurality of fin members 50 and a plurality of peaks 52, wherein each peak 52 connects one of the fin members 50 to an adjacent one of the fin members 50, such that the fin assembly 42 has a corrugated configuration. For example, the fin assembly 42 may be formed of any desired material, such as copper sheet, aluminum sheet, or stainless steel sheet. In the specific example provided, the fin assembly 42 is formed of folded copper sheet. If desired, the material forming the fin assembly 42 may be perforated, or may be an “expanded” sheet (i.e., a sheet of material cut and stretched to form a regular pattern of mesh material), or may be in a mesh configuration.

[0014] The fin assembly 42 can be received in the cavity 44 of the radiator base 40 and can be fixedly and thermally connected to the radiator base 40. For example, some or all of the peaks 52 can be soft-soldered, hard-soldered, fused to, or sintered to an associated inner surface of one of the first walls 46 using silver-based or copper-based sintering techniques. The outer surface of one of the first walls 46 can be fixedly and thermally connected to the board terminal 24, for example, by soft-soldering, hard-soldering, or sintering.

[0015] refer to Figures 8 to 10This diagram illustrates a portion of an inverter 60 for an electric motor (not shown). Unless otherwise described herein, the inverter 60 may be constructed in the manner disclosed in International (PCT) Patent Application No. PCT / US2022 / 019900, filed March 11, 2022, or U.S. Application No. 17 / 838396, filed June 13, 2022, the disclosures of which are incorporated herein by reference as if fully and completely set forth herein. In short, the inverter 60 includes an inverter mounting 62, a plurality of thermally cooled power semiconductors 10, and a plurality of busbars including a positive busbar 64, a negative busbar 66, and a plurality of phase busbars 68.

[0016] The inverter mounting bracket 62 is formed of an insulating plastic material and defines a base 70, an outer peripheral wall 72, a middle peripheral wall 74, an inner peripheral wall 76, and a plurality of cavities 78 radially disposed between the outer peripheral wall 72 and the middle peripheral wall 74. The cavities 78 are circumferentially spaced apart from each other around the middle peripheral wall 74. A plurality of terminal receivers (not specifically shown) are formed through the base 70, and each set of terminal receivers intersects with a corresponding one in a cavity. Each of the heat-dissipating power semiconductors 10 is received in a corresponding one of the cavities 78, wherein the lead terminals 22 of the power semiconductor 12 are received in the terminal receiver such that the lead terminals 22 extend through the base 70. It should be understood that the lead terminals 22 can be mechanically and electrically connected to the positive busbar 64, the negative busbar 66, and the phase busbar 68 to electrically connect the power semiconductor 12 to the busbars.

[0017] Cooling fluid can be supplied to the interior of the radiator base 40 and the fin assembly 42 in any desired manner. In the provided example, a plurality of coolant ports 80 are formed through the intermediate circumferential wall 74 and allow cooling fluid to flow from the annular region between the inner circumferential wall 76 and the intermediate circumferential wall 74 into each of the cavities 78. In this respect, each coolant port 80 fluidly connects an associated one of the cavities 78 to the annular region between the inner circumferential wall 76 and the intermediate circumferential wall 74.

[0018] See Figure 11Another embodiment of a heat-dissipating power semiconductor 10' is shown. The heat-dissipating power semiconductor 10' may include a power semiconductor 12 and a heat sink 14'. The heat sink 14' may include a fin assembly 42' defining a plurality of fin members 50 and a plurality of peaks 52, wherein each peak 52 connects one of the fin members 50 to an adjacent one of the fin members 50, thereby giving the fin assembly 42' a corrugated configuration. In one embodiment, the fin assembly 42' may include 22 fin members 50. The fin assembly 42' may not be limited by walls and may be configured to be directly bonded or coupled to the outer surface of the power semiconductor 12. For example, the fin assembly 42' may be fixedly coupled to a package body 26 or a board terminal 24. In one embodiment, one or more peaks 52 may be directly bonded to the board terminal 24, such as by soldering or fusion bonding. For example, the fin assembly 42' may be formed of any desired material, such as copper sheet, aluminum sheet, or stainless steel sheet. In one embodiment, the fin assembly 42' is formed of folded copper sheet.

[0019] Figure 12 Another embodiment of the fin assembly 42' is depicted. The fin assembly 42' may define a plurality of fin members 50 and a plurality of peaks 52', wherein each peak 52' connects one of the fin members 50 to an adjacent one of the fin members 50, so that the fin assembly 42 has a folded configuration with creases. The folded configuration with creases can be formed by mechanically reducing the thickness of the material sheet used to form the fin assembly 42' at periodic intervals or distances, the intervals or distances corresponding to the positions where the peaks 52' are present on the sheet when in an assembled form. The material sheet, such as copper, aluminum, or stainless steel, may be rolled to reduce the sheet thickness at the locations where the peaks 52' are formed. The peaks 52' may then be bent approximately 180 degrees at these locations. The process of periodically reducing the sheet thickness may form recesses 86 on the facing surfaces 88 of the fin members 50 and on the opposing facing surfaces 90 of adjacent fin members 50. The recesses 86 may define the beginning and end of the length of the sheet thickness reduction. When the sheet is bent to form fin assembly 42' and peak 52', compared to an embodiment without recess 88, the recess 86 on the facing surface 88 of the fin member 50 and the recess 86 on the opposing facing surface 90 of the adjacent fin member 50 can position the facing surface 88 and the opposing facing surface 90 closer together. This configuration can increase the thermal conductivity of the fin assembly 42' because the distance between the facing surfaces 89 and 90 is reduced, thereby increasing convection and concentrating more cooling surface near the heat-dissipating power semiconductor.

[0020] Figures 13 to 17An embodiment of a heat-dissipating power semiconductor 10' received within an inverter mounting assembly 60 is depicted. The heat-dissipating power semiconductor 10' can be attached to a sealing gasket 82 such that the sealing gasket 82 abuts a first side 84 of a cavity 78, and the heat-dissipating power semiconductor 10' abuts a second side 86 of the cavity 78 facing the first side 84. Viewed in plan view, the sealing gasket 82 can be substantially square or rectangular in shape, and the height of the sealing gasket 82 can be selected based on the amount of force exerted by the sealing gasket 82 on the heat-dissipating power semiconductor 10'. The sealing gasket 82 can be formed of a compressible material capable of withstanding the temperature of fluid flowing through the heat-dissipating power semiconductor 10'. In one embodiment, the sealing gasket 82 can be formed of a closed-cell foam or a compressible elastomer material. The sealing gasket 82 can be compressed such that its outer surface closely abuts the fin assembly 42', forming a fluid-tight seal between the sealing gasket 82 and the fin assembly 42' to prevent fluid from flowing through the cavity 78 at locations other than the fin assembly 42'. The outer surface of the package body 26 can closely conform to the shape of the cavity 78 receiving the heat-dissipating power semiconductor 10', such that a fluid-tight seal exists between the package body 26 and the cavity 78 when the heat-dissipating power semiconductor 10' is received within the cavity 78. The first side 84 can have a surface that is not parallel to the second side 86, such that when the heat-dissipating power semiconductor 10' and the sealing gasket 82 are received within the cavity 78, the sealing gasket 82 can be compressed by the non-parallel first side 84 and biased to sealably engage with the fin assembly 42' of the heat-dissipating power semiconductor 10'. That is, when the heat-dissipating power semiconductor 10' and the sealing gasket 82 are moved to a position where the terminal extends through the terminal receiver, the non-parallel first side 84 presses the sealing gasket 82 into a compression fit with the fin assembly 42'. In one embodiment, the first side 84 of the cavity 78 may be at an angle between 10 and 20 degrees relative to the second side 86.

[0021] The foregoing description of embodiments has been provided for purposes of illustration and description. The foregoing description of embodiments is not intended to be exhaustive or limiting of this disclosure. Various elements or features of a particular embodiment are generally not limited to that particular embodiment, but are interchangeable where applicable and can be used in selected embodiments, even if they are not specifically shown or described. The same elements or features may also be changed in many ways. These changes should not be considered as departing from this disclosure, and all such modifications are intended to be included within the scope of this disclosure.

Claims

1. A heat-dissipating power semiconductor component, comprising: Semiconductor dies; Multiple pin terminals, the multiple pin terminals being electrically connected to the semiconductor die; A package body that at least partially surrounds the semiconductor die and the plurality of pin terminals; as well as A radiator connected to the assembly, the radiator including a fin assembly having a plurality of fin members configured to receive cooling fluid.

2. The heat-dissipating power semiconductor component according to claim 1, wherein the heat-dissipating power semiconductor component further includes a sealing gasket, the sealing gasket being connected to the fin assembly.

3. The heat-dissipating power semiconductor component according to claim 2, wherein, The gasket is a compressible material, thereby forming a fluid barrier seal between the gasket and the fin assembly.

4. The heat-dissipating power semiconductor component according to claim 2, wherein, The sealing gasket is configured to be adjacent to a first side of the cavity, the surface of the first side of the cavity being non-parallel to a second side of the cavity, and the second side of the cavity being opposite to the first side of the cavity.

5. The heat-dissipating power semiconductor component according to claim 1, wherein, The fin assembly is configured to receive fluid at one end and transfer the fluid to the other end of the fin assembly.

6. The heat-dissipating power semiconductor component according to claim 1, wherein, The fin assembly includes multiple peaks, which are connected to the fin components.

7. The heat-dissipating power semiconductor assembly according to claim 1, wherein the fin assembly comprises a folded planar sheet.

8. The heat-dissipating power semiconductor component according to claim 1, wherein the fin group further includes a plurality of through holes.

9. The heat-dissipating power semiconductor assembly according to claim 1, wherein the fin assembly further includes one or more recesses at the peaks of the plurality of fin members.

10. The heat-dissipating power semiconductor assembly of claim 1, wherein the fin assembly further comprises a reduced-thickness section between a facing surface of one of the plurality of fin members and a facing surface of an opposing fin member among the plurality of fin members.

11. A heat-dissipating power semiconductor component, comprising: Semiconductor dies; Multiple pin terminals, the multiple pin terminals being electrically connected to the semiconductor die; A package body that at least partially surrounds the semiconductor die and the plurality of pin terminals; A radiator comprising a fin assembly having a plurality of fin members configured to receive cooling fluid. as well as A radiator base having a pair of first walls and a pair of second walls, wherein the fin assembly is received within the pair of first walls and the pair of second walls.

12. The heat-dissipating power semiconductor component according to claim 11, wherein, The pair of first walls are substantially parallel to each other, and the pair of second walls are substantially parallel to each other.

13. The heat-dissipating power semiconductor component according to claim 11, wherein, The fin assembly is configured to receive fluid at one end and transfer the fluid to the other end of the fin assembly.

14. The heat-dissipating power semiconductor component according to claim 11, wherein, The fin assembly includes multiple peaks, which are connected to the fin components.

15. The heat-dissipating power semiconductor component according to claim 14, wherein, At least some of the plurality of peaks are fixedly attached to the base of the radiator.

16. The heat-dissipating power semiconductor assembly of claim 11, wherein the fin assembly comprises a folded planar sheet.

17. A heat-dissipating power semiconductor component, comprising: Semiconductor dies; Multiple pin terminals, the multiple pin terminals being electrically connected to the semiconductor die; A package body that at least partially surrounds the semiconductor die and the plurality of pin terminals; A radiator connected to the assembly, the radiator including a fin assembly having a plurality of fin members configured to receive cooling fluid; A sealing gasket, the sealing gasket being coupled to the fin assembly, the sealing gasket being formed of a compressible material; as well as An inverter mounting assembly having a plurality of cavities shaped to receive heat-dissipating power semiconductors, each of the plurality of cavities having a first side that is not parallel to a second side relative to the first side, such that the first side engages the surface of the sealing gasket and biases the sealing gasket to engage with the fin assembly.

18. The heat-dissipating power semiconductor component according to claim 16, wherein, A fluid barrier seal exists between the gasket and the fin assembly.

19. The heat-dissipating power semiconductor component according to claim 16, wherein, The sealing gasket is a closed-cell foam.

20. The heat-dissipating power semiconductor component according to claim 16, wherein, The first side of the cavity forms an angle between 10 and 20 degrees relative to the second side of the cavity.

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