A butterfly-shaped symmetric microcrystalline laser

Abstract

This invention provides a butterfly-shaped symmetrical microcrystalline laser, relating to the field of laser technology. It includes a triangular frame, a cathode, an anode, and reflectors. A V-shaped resonant cavity is arranged within the triangular frame. Three reflectors are respectively positioned at the two openings and corners of the V-shaped resonant cavity. Two anodes are symmetrically arranged on the first and second sides of the triangular frame. The cathode is located between the two sides of the V-shaped resonant cavity and connects to the corner of the V-shaped resonant cavity. By replacing the traditional linear resonant cavity with a V-shaped resonant cavity, the same cavity length can be transformed into two elongated holes of different lengths, significantly reducing manufacturing difficulty and improving manufacturing accuracy. The distance between the cathode and anode of the laser using the V-shaped resonant cavity is significantly shortened, greatly reducing the voltage required for laser startup, lowering the high-voltage protection requirements of the laser, and improving the safety of laser operation.

Description

Technical Field

[0001] This invention relates to the field of laser technology, and specifically to a butterfly-shaped symmetrical microcrystalline laser. Background Technology

[0002] As a classic gas laser, the helium-neon laser has established a unique and irreplaceable position in demanding precision measurement and scientific research fields due to its superior beam quality, extremely high stability, and reliable performance. The frequency stability of the laser directly determines the accuracy of precision measurements and is a core indicator of laser measurement.

[0003] According to the laser principle ν=MC / (nL), where ν is the frequency, C is the speed of light, M is an integer, n is the refractive index of the gas, and L is the relative length of the helium-neon laser's mirrors, the frequency change is caused by variations in the relative length of the mirrors and the refractive index of the gas within the resonant cavity. The resonant cavity of a laser is extremely precise, typically with a diameter of only 0.6mm-3mm and a length of 50mm-300mm. Currently, the resonant cavity can only be milled on high-speed rotating machine tools using slender diamond drill bits. As the machining length increases, the error in the hole becomes increasingly larger. Currently, lasers are limited by the machining precision of the resonant cavity, preventing further reduction in the discharge tube diameter and significantly limiting the discharge tube length. This restricts the potential for further increases in laser power. Summary of the Invention

[0004] The purpose of this invention is to provide a butterfly-shaped symmetrical microcrystalline laser, which effectively solves the problem that the power of existing lasers cannot be further increased.

[0005] To address the aforementioned problems, this invention discloses a butterfly-shaped symmetrical microcrystalline laser, comprising a triangular frame, a cathode, an anode, and a reflector. The triangular frame has a triangular cross-section, and its thickness is less than the length of any side of the triangle. The three sides of the triangular frame are a first side, a second side, and a third side. A V-shaped resonant cavity is provided within the triangular frame. The openings at both ends of the V-shaped resonant cavity are located at the first and second vertices of the triangular frame, respectively, and the corner of the V-shaped resonant cavity is located at the third vertices of the triangular frame. The V-shaped resonant cavity is filled with a working gas.

[0006] The system has three reflectors, all of which illuminate the V-shaped resonant cavity and are respectively positioned at the two openings and the corners of the V-shaped resonant cavity.

[0007] The anode is provided in two parts, which are symmetrically arranged on the first and second sides of the triangular frame and respectively connected to the two sides of the V-shaped resonant cavity.

[0008] The cathode is located between the two sides of the V-shaped resonant cavity and is at least partially disposed within the triangular frame. The cathode is connected to the corner of the V-shaped resonant cavity.

[0009] Optionally, the triangular frame is made of microcrystalline glass, and the reflector is made of a material with a low coefficient of thermal expansion.

[0010] Optionally, the triangular frame is provided with a receiving cavity, which is disposed between the two sides of the V-shaped resonant cavity and opens towards the third side of the V-shaped resonant cavity; the cathode is at least partially disposed in the receiving cavity, and the cathode is sealed to the opening of the receiving cavity by indium sealing welding to seal the opening of the receiving cavity.

[0011] Optionally, the cathode has a split structure, comprising a cathode substrate and a cathode cover plate; the cathode substrate is a cylindrical structure closed at one end, with the closed end being semi-circular; the cathode substrate is disposed in the receiving cavity, with the closed end facing the opening of the receiving cavity, and the cathode cover plate is installed at the opening of the receiving cavity; the cathode cover plate is sealed to the triangular frame by indium sealing welding, and the cathode substrate is electrically connected to the cathode cover plate.

[0012] Optionally, the cathode is a one-piece cylindrical structure closed at both ends, one of which is a planar structure and the other is a semi-circular structure. The semi-circular closed end has an outwardly extending flange in the circumference. The closed end of the planar structure of the cathode extends into the receiving cavity, while the closed end of the semi-circular structure is outside the receiving cavity. The flange is located at the opening outside the receiving cavity and is sealed to the triangular frame by indium sealing welding.

[0013] Optionally, a first channel is provided at each of the two anodes of the triangular frame, one end of which is connected to the corresponding anode and the other end of which is connected to the side of the V-shaped resonant cavity; a second channel is provided at the cathode of the triangular frame, one end of which is connected to the corner of the V-shaped resonant cavity and the other end of which is connected to the receiving cavity.

[0014] Optionally, it also includes a getter, the triangular frame is provided with a groove, the bottom of the groove is connected to the V-shaped resonant cavity, the getter is disposed in the groove, and a sealing cover is provided at the opening of the groove.

[0015] Optionally, the three reflectors are a first reflector, a second reflector, and a third reflector; the first reflector and the third reflector are respectively disposed at the two openings of the V-shaped resonant cavity, and the second reflector is disposed at the corner of the V-shaped resonant cavity.

[0016] Optionally, the included angle between the two sides of the V-shaped resonant cavity is 90°.o -120 o .

[0017] Optionally, the two sides of the V-shaped resonant cavity are of equal length.

[0018] Beneficial effects:

[0019] This invention provides a butterfly-shaped symmetrical microcrystalline laser. By transforming a traditional linear resonant cavity into a V-shaped resonant cavity, the linear resonant cavity can be converted into two elongated holes of varying lengths within the same cavity length. The length of each elongated hole is significantly reduced, greatly simplifying fabrication and improving precision. Similarly, under the same fabrication conditions, the V-shaped resonant cavity achieves a longer effective gain length using two shorter elongated holes, effectively extending the gain region and thus significantly increasing laser output power. Compared to a traditional linear resonant cavity, the laser using a V-shaped resonant cavity is significantly shorter in length for the same optical path length, resulting in a more compact structure and wider applicability. Furthermore, the significantly reduced distance between the cathode and anode in the V-shaped resonant cavity laser drastically lowers the voltage required for laser startup, reducing high-voltage protection requirements and enhancing operational safety. Attached Figure Description

[0020] The accompanying drawings, which form part of this invention, are used to provide a further understanding of the invention. The illustrative embodiments of the invention and their descriptions are used to explain the invention and do not constitute an undue limitation of the invention. In the drawings:

[0021] Figure 1 This is a schematic diagram of the butterfly-shaped symmetrical microcrystalline laser structure disclosed in this invention;

[0022] Figure 2 This is a top view of the triangular frame disclosed in this invention;

[0023] Figure 3 This is a schematic diagram of the cathode disclosed in this invention;

[0024] Figure 4 This is a schematic diagram of another cathode structure disclosed in this invention;

[0025] Figure 5 This is a top view schematic diagram of the anode disclosed in this invention;

[0026] Figure 6 This is a schematic diagram of the reflector structure disclosed in this invention.

[0027] Explanation of reference numerals in the attached figures:

[0028] 1. Triangular frame; 11. First side; 12. Second side; 13. Third side; 2. Anode; 3. Cathode; 31. Cathode substrate; 32. Cathode cover plate; 33. Folded edge; 4. V-shaped resonant cavity; 5. Receiving cavity; 6. Reflector; 61. First reflector; 62. Second reflector; 63. Third reflector; 64. Coating area; 7. First channel; 8. Second channel; 9. Getter; 10. Third channel; 14. Sealing cover plate. Detailed Implementation

[0029] It should be understood that in the description of this invention, the terms "center," "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. These terms are used only for the convenience of describing the invention and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the invention. Furthermore, the terms "first," "second," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined with "first," "second," etc., may explicitly or implicitly include one or more of that feature. In the description of this invention, unless otherwise stated, "a plurality of" means two or more.

[0030] It should be noted that, in the description of this invention, unless otherwise explicitly specified and limited, the terms "set up," "connected," and "linked" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0031] The technical solution of the present invention will be further illustrated below through specific embodiments. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. The content of the embodiments does not constitute a limitation on the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0032] like Figures 1-6As shown, this invention discloses a butterfly-shaped symmetrical microcrystalline laser, comprising a triangular frame 1, a cathode 3, an anode 2, and a reflector 6. The triangular frame 1 serves as the laser's supporting substrate and is made of microcrystalline glass. The cross-section of the triangular frame 1 is triangular, and its thickness is less than the length of any side of the triangle. Microcrystalline glass possesses a near-zero coefficient of linear expansion, good mechanical strength, and excellent chemical stability. The coefficient of linear expansion of microcrystalline glass is typically -2 × 10⁻⁶. -8 -2×10 -8 The coefficient of thermal expansion is reduced by at least 100 times compared to traditional laser housing materials. The three sides of the triangular frame 1 are the first side 11, the second side 12, and the third side 13. A V-shaped resonant cavity 4 is located inside the triangular frame 1, serving as the channel for laser generation, propagation, and resonance. The openings at both ends of the V-shaped resonant cavity 4 are symmetrically arranged, located at the first and second vertices of the triangular frame 1, respectively. The corner of the V-shaped resonant cavity 4 is located at the third vertices of the triangular frame 1. The V-shaped resonant cavity 4 is filled with a working gas, which can be a helium-neon mixture, with neon typically comprising 3%-20%. The pressure of the helium-neon mixture in the V-shaped resonant cavity 4 is typically 1 Torr-6 Torr. The V-shaped resonant cavity 4 constitutes the folded optical path of the laser.

[0033] like Figure 6 As shown, the reflector 6 has a coating area 64, which faces the V-shaped resonant cavity 4. There are three reflectors 6 in total, all facing the interior of the V-shaped resonant cavity 4. They are respectively sealed and installed at the two openings and corners of the V-shaped resonant cavity 4 to form a complete laser resonant reflection system, ensuring stable laser propagation within the V-shaped resonant cavity 4. The three reflectors 6 can be made of quartz glass with a low coefficient of thermal expansion or microcrystalline glass with zero expansion. The reflectors 6 are specifically sealed to the triangular frame 1 using van der Waals forces.

[0034] The laser has two anodes 2, which are symmetrically distributed on the first side 11 and the second side 12 of the triangular frame 1. Both anodes 2 are connected to the V-shaped resonant cavity 4, and a sealed connection structure is used between the anodes 2 and the triangular frame 1 to ensure the airtightness of the V-shaped resonant cavity 4. Both anodes 2 are made of a metal material with excellent electrical conductivity.

[0035] The cathode 3 is located between the two sides of the V-shaped resonant cavity 4 and is at least partially embedded inside the triangular frame 1. The installation position of the cathode 3 corresponds to the corner of the V-shaped resonant cavity 4, so that the distance between the cathode 3 and the two anodes 2 is equal, ensuring that the electric field can uniformly cover the V-shaped resonant cavity 4, thereby improving the stability and power consistency of the laser output.

[0036] A receiving cavity 5 is provided on the triangular frame 1 corresponding to the mounting position of the cathode 3. The receiving cavity 5 is located between the two sides of the V-shaped resonant cavity 4, and the opening of the receiving cavity 5 faces the third side 13 of the V-shaped resonant cavity 4. The opening size of the receiving cavity 5 is slightly larger than the cross-sectional size of the cathode 3 to facilitate the installation of the cathode 3. The cathode 3 is at least partially embedded in the receiving cavity 5. The cathode 3 and the opening of the receiving cavity 5 are sealed together by indium sealing welding. Indium, as a sealing material, has good ductility and sealing properties, which can effectively seal the opening of the receiving cavity 5 and prevent external air and impurities from entering the receiving cavity 5 and the interior of the V-shaped resonant cavity 4, thus affecting the laser performance.

[0037] In this application, the traditional linear resonant cavity of the laser is designed as a V-shaped resonant cavity 4, which reduces the processing difficulty of the V-shaped resonant cavity 4. The processing accuracy of the traditional linear resonant cavity of the laser is difficult to guarantee. With the same resonant cavity length, the V-shaped resonant cavity 4 can transform the linear resonant cavity into two long, narrow holes. The length of each long, narrow hole is significantly reduced, greatly reducing the processing difficulty and improving the processing accuracy.

[0038] Secondly, the V-shaped resonant cavity 4 is adopted. Compared with the traditional linear resonant cavity, the laser length is greatly shortened under the same optical path length, the structure is more compact, and the applicability is stronger.

[0039] Furthermore, by employing a V-shaped resonant cavity 4, compared to a traditional linear resonant cavity, under the same conditions—that is, under the same discharge gas type and pressure—the distance between the cathode 3 and the anode 2 is significantly shortened, the voltage required for laser startup is greatly reduced, the high-voltage protection requirement for the laser is lowered, and the safety of laser operation is improved.

[0040] Specifically, such as Figure 3 As shown, the cathode 3 has a split structure, comprising a cathode substrate 31 and a cathode cover plate 32. The cathode substrate 31 is a cylindrical structure with one closed end and one open end, the closed end being semi-circular. The cathode substrate 31 is completely housed within the receiving cavity 5, with the closed end facing the opening of the receiving cavity 5 and the open end facing the corner of the V-shaped resonant cavity 4. The cathode cover plate 32 is installed at the opening of the receiving cavity 5, and the cathode cover plate 32 is indium-sealed welded to the opening of the receiving cavity 5, thereby achieving a fixed connection and seal with the triangular frame 1. This not only fixes and protects the cathode substrate 31 within the receiving cavity 5 but also improves the sealing performance of the receiving cavity 5. A conductive connection structure, such as indium soldering or conductive adhesive bonding, is used between the cathode substrate 31 and the cathode cover plate 32 to achieve electrical connection, ensuring that an external power source can supply power to the cathode substrate 31 through the cathode cover plate 32.

[0041] Optionally, in some other embodiments, such as Figure 4As shown, the cathode 3 can also be a one-piece structure, which is a cylindrical structure closed at both ends. One closed end is a planar structure, and the other closed end is a semi-circular structure. The semi-circular closed end has an outwardly extending flange 33. When installed on the triangular frame 1, the closed end of the planar structure of the cathode 3 extends into the receiving cavity 5, the closed end of the semi-circular structure is outside the receiving cavity 5, and the flange 33 is located at the opening outside the receiving cavity 5 and is sealed to the triangular frame 1 by indium sealing welding.

[0042] Each of the two anodes 2 of the triangular frame 1 has a first channel 7. One end of the first channel 7 is connected to the corresponding anode 2, and the other end is connected to the side of the V-shaped resonant cavity 4. The inner diameter of the channel is designed according to the conductivity requirements of the anode 2 to ensure smooth charge conduction. A second channel 8 is correspondingly provided at the cathode 3 of the triangular frame 1. One end of the second channel 8 is connected to the corner of the V-shaped resonant cavity 4, and the other end is connected to the receiving cavity 5 to realize charge conduction between the cathode 3 and the V-shaped resonant cavity 4.

[0043] The laser also includes a getter 9, which is either zirconium-aluminum getter 9 or titanium-zirconium-vanadium getter 9. It features high adsorption capacity and fast adsorption speed, effectively adsorbing residual air, water vapor, impurities, and other harmful gases within the V-shaped resonant cavity 4. This ensures a high vacuum inside the resonant cavity, reducing laser propagation loss and improving laser output power and stability. A groove is formed on the triangular frame 1, and the getter 9 is placed within it. The bottom of the groove is connected to the V-shaped resonant cavity 4 via a third channel 10. The diameter of the third channel 10 is smaller than the size of the getter 9 to prevent it from falling into the V-shaped resonant cavity 4. A sealing cover 14 is installed at the opening of the groove. The sealing cover 14 is made of low-expansion glass and is sealed to the triangular frame 1 using van der Waals forces to prevent external gases from entering the groove, ensuring the getter 9 can stably perform its adsorption function over a long period.

[0044] In this application, the getter 9 and the groove can be disposed on the first side 11 or the second side 12 of the triangular frame 1, or on the front side of the triangular frame 1.

[0045] The three reflectors 6 are designated as a first reflector 61, a second reflector 62, and a third reflector 63. The first reflector 61 and the third reflector 63 are respectively installed at the two openings of the V-shaped resonant cavity 4, while the second reflector 62 is located at the corner of the V-shaped resonant cavity 4. Furthermore, the first reflector 61, the second reflector 62, and the third reflector 63 can all be selected as either plane reflectors or concave spherical reflectors according to actual resonance requirements. The concave spherical reflector can further improve the laser focusing effect and enhance the resonance intensity, making it suitable for higher power laser output scenarios.

[0046] The polarization state of traditional lasers exhibits random characteristics, which is detrimental to many precision measurements. Traditional lasers can only achieve a single polarization state output by internally installing polarization elements, such as a Brewster window. This built-in window increases the optical path's sensitivity to temperature, significantly reducing frequency stability. However, the laser in this invention, due to the presence of a folded optical path oblique-incident mirror, allows for the separation of the S and P polarization states using coating technology. With appropriate design, the P-wave loss can be easily increased, ensuring that the laser only emits stable light in the S-polarization state, thus maintaining frequency stability. This significantly improves the measurement accuracy of instruments requiring polarization control.

[0047] In one feasible embodiment, the three reflectors 6 are configured as follows:

[0048] (1) The first scheme for the configuration of the reflector

[0049] The first reflecting mirror 61 is an output mirror with zero-degree incident angle. The first reflecting mirror 61 is a plane mirror with an infinite radius of curvature. The first reflecting mirror 61 has a certain transmittance, which is 100-10000ppm.

[0050] The second reflecting mirror 62 is an obliquely incident reflecting mirror. The second reflecting mirror 62 is a plane mirror with an infinite radius of curvature and a transmittance of less than 20 ppm.

[0051] The third reflecting mirror 63 is a concave spherical reflecting mirror with zero-degree incident angle, a radius of curvature between 0.1 and 10 m, and a transmittance of less than 20 ppm.

[0052] (2) Second option for mirror configuration

[0053] The first reflecting mirror 61 is an output mirror with zero-degree incident angle. The first reflecting mirror 61 is a plane mirror with infinite radius of curvature and a transmittance of 100-10000ppm.

[0054] The second reflecting mirror 62 is a concave spherical reflecting mirror with oblique incidence, a radius of curvature between 0.1 and 10 m, and a transmittance of less than 20 ppm.

[0055] The third reflecting mirror 63 is a zero-degree incident reflecting mirror. The third reflecting mirror 63 is a plane mirror with an infinite radius of curvature and a transmittance of less than 20 ppm.

[0056] (3) The third option for the configuration of the reflector

[0057] The first reflecting mirror 61 is an output mirror with zero-degree incident angle. The first reflecting mirror 61 is a plane mirror with infinite radius of curvature and a transmittance of 100-10000ppm.

[0058] The second reflecting mirror 62 is a concave spherical reflecting mirror with oblique incidence, a radius of curvature between 0.1 and 10 m, and a transmittance of less than 20 ppm.

[0059] The third reflecting mirror 63 is a concave spherical reflector with zero-degree incident angle, a radius of curvature between 0.1 and 10 m, and a transmittance of less than 20 ppm.

[0060] (4) The fourth option for the configuration of the reflector

[0061] The first reflecting mirror 61 is a zero-degree incident reflecting mirror, and the first reflecting mirror 61 is a plane mirror with an infinite radius of curvature and a transmittance of less than 20ppm.

[0062] The second reflecting mirror 62 is a concave spherical output mirror with oblique incidence, a radius of curvature between 0.1 and 10 m, and a transmittance of 50-5000 ppm.

[0063] The third reflecting mirror 63 is a zero-degree incident reflecting mirror. The third reflecting mirror 63 is a plane mirror with an infinite radius of curvature and a transmittance of less than 20 ppm.

[0064] (5) Fifth option for mirror configuration

[0065] The first reflecting mirror 61 is a concave spherical reflecting mirror with zero-degree incident angle, a radius of curvature between 0.1 and 10 m, and a transmittance of less than 20 ppm.

[0066] The second reflecting mirror 62 is an oblique incident output mirror. The second reflecting mirror 62 is a plane mirror with an infinite radius of curvature and a transmittance of 50-5000ppm.

[0067] The third reflecting mirror 63 is a concave spherical reflecting mirror with zero-degree incident angle, a radius of curvature between 0.1 and 10 m, and a transmittance of less than 20 ppm.

[0068] (6) The sixth option for the configuration of the reflector

[0069] The first reflecting mirror 61 is a concave spherical output mirror with zero-degree incident angle, a radius of curvature between 0.1 and 10 m, and a transmittance of 100-10000 ppm.

[0070] The second reflecting mirror 62 is an oblique incidence reflecting mirror. The second reflecting mirror 62 is a plane mirror with an infinite radius of curvature and a transmittance of less than 20 ppm.

[0071] The third reflecting mirror 63 is a concave spherical reflecting mirror with zero-degree incident angle, a radius of curvature between 0.1 and 10 m, and a transmittance of less than 20 ppm.

[0072] In this application, the included angle between the two sides of the V-shaped resonant cavity 4 is 90°-120°, and the lengths of the two sides of the V-shaped resonant cavity 4 are equal. This structure ensures that after the laser is reflected by the reflector 6 at the corner, the propagation direction changes by 45°-60°, avoiding propagation deviation or loss of the laser at the corner. At the same time, it facilitates the installation and positioning of the three reflectors 6, improving the stability and reliability of the entire resonant system.

[0073] In some other embodiments, the included angle between the two sides of the V-shaped resonant cavity 4 can also be set to other angles as needed.

[0074] The applicant declares that the above are merely specific embodiments of the present invention, but the scope of protection of the present invention is not limited thereto. Those skilled in the art should understand that any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in the present invention fall within the scope of protection and disclosure of the present invention.

Claims

1. A butterfly-shaped symmetrical microcrystalline laser, characterized in that, The device includes a triangular frame (1), a cathode (3), an anode (2), and a reflector (6). The cross-section of the triangular frame (1) is triangular, and its thickness is less than the length of any side of the triangle. The three sides of the triangular frame (1) are the first side (11), the second side (12), and the third side (13). A V-shaped resonant cavity (4) is provided inside the triangular frame (1). The openings at both ends of the V-shaped resonant cavity (4) are located at the first and second vertices of the triangular frame (1), respectively. The corner of the V-shaped resonant cavity (4) is located at the third vertices of the triangular frame (1). The V-shaped resonant cavity (4) is filled with working gas. The reflector (6) is provided in three parts, and all three reflectors (6) illuminate the V-shaped resonant cavity (4) and are respectively located at the two openings and the corners of the V-shaped resonant cavity (4); The anode (2) is provided in two parts. The two anodes (2) are symmetrically arranged on the first side (11) and the second side (12) of the triangular frame (1) and are respectively connected to the two sides of the V-shaped resonant cavity (4). The cathode (3) is located between the two sides of the V-shaped resonant cavity (4) and is at least partially disposed within the triangular frame (1). The cathode (3) is connected to the corner of the V-shaped resonant cavity (4).

2. The butterfly-shaped symmetrical microcrystalline laser according to claim 1, characterized in that, The triangular frame (1) is made of microcrystalline glass, and the reflector (6) is made of a material with a low coefficient of thermal expansion.

3. A butterfly-shaped symmetrical microcrystalline laser according to claim 2, characterized in that, The triangular frame (1) is provided with a receiving cavity (5), which is located between the two sides of the V-shaped resonant cavity (4) and opens towards the third side (13) of the V-shaped resonant cavity (4); the cathode (3) is at least partially located in the receiving cavity (5), and the cathode (3) is sealed to the opening of the receiving cavity (5) by indium sealing welding.

4. A butterfly-shaped symmetrical microcrystalline laser according to claim 3, characterized in that, The cathode (3) is a split structure, comprising a cathode substrate (31) and a cathode cover plate (32); the cathode substrate (31) is a cylindrical structure with one end closed, and the closed end is semi-circular; the cathode substrate (31) is disposed in the receiving cavity (5), with the closed end facing the opening of the receiving cavity (5), and the cathode cover plate (32) is installed at the opening of the receiving cavity (5), the cathode cover plate (32) is sealed and welded to the triangular frame (1) by indium sealing, and the cathode substrate (31) is electrically connected to the cathode cover plate (32).

5. A butterfly-shaped symmetrical microcrystalline laser according to claim 3, characterized in that, The cathode (3) is an integral cylindrical structure with closed ends. One closed end is a planar structure, and the other closed end is a semi-circular structure. The semi-circular closed end has an outwardly extending flange (33) in the circumference. The closed end of the planar structure of the cathode (3) extends into the receiving cavity (5), and the closed end of the semi-circular structure is outside the receiving cavity (5). The flange (33) is located at the opening outside the receiving cavity (5) and is sealed with the triangular frame (1) by indium sealing.

6. A butterfly-shaped symmetrical microcrystalline laser according to claim 3, characterized in that, The triangular frame (1) has a first channel (7) at each of the two anodes (2), one end of the first channel (7) is connected to the corresponding anode (2), and the other end is connected to the side of the V-shaped resonant cavity (4); the triangular frame (1) has a second channel (8) at the cathode (3), one end of the second channel (8) is connected to the corner of the V-shaped resonant cavity (4), and the other end is connected to the receiving cavity (5).

7. A butterfly-shaped symmetrical microcrystalline laser according to claim 1, characterized in that, It also includes a getter (9), the triangular frame (1) is provided with a groove, the bottom of the groove is connected to the V-shaped resonant cavity (4), the getter (9) is placed in the groove, and a sealing cover plate (14) is provided at the opening of the groove.

8. A butterfly-shaped symmetrical microcrystalline laser according to claim 1, characterized in that, The three reflectors (6) are a first reflector (61), a second reflector (62) and a third reflector (63); the first reflector (61) and the third reflector (63) are respectively disposed at the two openings of the V-shaped resonant cavity (4), and the second reflector (62) is disposed at the corner of the V-shaped resonant cavity (4).

9. A butterfly-shaped symmetrical microcrystalline laser according to claim 1, characterized in that, The included angle between the two sides of the V-shaped resonant cavity (4) is 90°-120°.

10. A butterfly-shaped symmetrical microcrystalline laser according to claim 9, characterized in that, The two sides of the V-shaped resonant cavity (4) are of equal length.

Images