High-power deep ultraviolet LED sterilizing lamp panel

The high-power deep ultraviolet LED sterilization lamp panel addresses blind spots by optimizing LED chip arrangement on a copper heat dissipation substrate, ensuring comprehensive disinfection without power sag, suitable for small disinfection and sterilization applications.

CN222110586UActive Publication Date: 2024-12-06JIAXING DYNGA SEMICON CO LTD
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Patent Information

Application Number
CN202420593104.7
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-03-25
Publication Date
2024-12-06
Estimated Expiration
2034-03-25

AI Technical Summary

Technical Problem

Current deep ultraviolet LED sterilization lamps exhibit blind spots in disinfection due to improper arrangement of lamp beads, leading to incomplete disinfection.

Method used

A high-power deep ultraviolet LED sterilization lamp panel with a predetermined arrangement of LED chips on a copper heat dissipation substrate, featuring an irradiation cone angle of 30° to 45° and chip spacing calculated based on significant light power collapse distance, ensuring no blind areas.

Benefits of technology

The solution provides a high-efficiency, high-power, low-power lamp panel with complete disinfection coverage, suitable for small disinfection and sterilization applications in places like stations, schools, and hospitals.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model discloses a lamp panel of a high-power deep ultraviolet LED sterilizing lamp. The lamp panel comprises a heat dissipation substrate, the deep ultraviolet LED chips are fixedly arranged on the heat dissipation substrate in a preset arrangement mode; wherein the irradiation taper angle theta of the deep ultraviolet LED chips is equal to 450, the chip spacing D of the adjacent deep ultraviolet LED chips is # imgabs0 #, and L'is the distance with obvious luminous power collapse. The high-power deep ultraviolet LED sterilizing lamp panel has the advantages of high efficiency, high power and low power consumption, is suitable for small-sized sterilizing lamps, occupies very small area of the whole circuit, and is very suitable for places such as stations, schools, hotels, hospitals and the like. In addition, a disinfection blind area can be avoided, and a more perfect disinfection effect is achieved.
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Description

Technical Field

[0001] The utility model relates to the field of sterilization lamps, and particularly discloses a high-power deep ultraviolet LED sterilization lamp panel. Background Art

[0002] As people pay more attention to environmental pollution and their requirements for food safety continue to increase, the demand for electrical appliances with disinfection and sterilization functions is also increasing. The importance of air disinfection is increasing, and deep ultraviolet disinfection appliances for disinfecting public places (such as stations, schools, hotels, hospitals, etc.) and public transportation are becoming more and more popular.

[0003] Deep UV sterilization kills viruses by exposing them to ultraviolet light. The effectiveness of deep UV sterilization is mainly determined by the arrangement of its lamp beads. Utility Model Content

[0004] During the process of implementing the present invention, the inventor discovered that when the current deep ultraviolet LED sterilization lamp is used for disinfection, when objects are placed within a certain range in front of it, there will be a blind spot for disinfection, resulting in poor disinfection effect for objects within this range.

[0005] In view of this, an object of the present invention is to provide a high-power deep ultraviolet LED sterilization lamp panel to at least partially improve the above-mentioned problems.

[0006] In order to achieve the above purpose, the utility model adopts the following technical solutions:

[0007] A high-power deep ultraviolet LED sterilization lamp panel, comprising:

[0008] Heat dissipation substrate;

[0009] The deep ultraviolet LED chips are fixedly mounted on the heat dissipation substrate in a predetermined arrangement; wherein the irradiation cone angle θ of the deep ultraviolet LED chips ranges from 30° to 45°, and the chip spacing D of the deep ultraviolet LED chips is calculated based on the distance L' at which obvious light power collapse occurs.

[0010] Preferably, the calculation formula for the chip spacing D between adjacent deep ultraviolet LED chips is:

[0011]

[0012] L' is the distance at which significant optical power collapse occurs.

[0013] Preferably, the heat dissipation substrate is a copper heat dissipation substrate with a regular hexagonal shape and a thickness of 1.5 mm.

[0014] Preferably, the number of the deep ultraviolet LED chips is 16, which are divided into 8 groups, and each group includes 2 deep ultraviolet LED chips connected in series.

[0015] Preferably, the deep ultraviolet LED chip is a gallium nitride semiconductor deep ultraviolet LED, model DLP (COBCu) -263M35C6, its output center wavelength is 265nm, the luminous power of a single deep ultraviolet LED chip is 263mW, and the total luminous power of the lamp board is 4.2W.

[0016] Preferably, it also includes a positive electrode pad and a negative electrode pad arranged on the heat dissipation substrate, and the positive electrode pad and the negative electrode pad are connected to an 11.6V switching power supply through a 24AMG red connecting wire and a 24AMG black connecting wire respectively.

[0017] Preferably, it also includes outlet holes for leading out the 24AMG red connecting wire and the 24AMG black connecting wire.

[0018] Preferably, it also includes a housing fixing hole opened on the heat dissipation substrate.

[0019] To sum up, the embodiment of the utility model can realize a high-efficiency, high-power, low-power deep ultraviolet LED sterilization lamp board, which is suitable for small disinfection and sterilization lamps. Its overall circuit area is very small and is very suitable for use in stations, schools, hotels, hospitals and other places.

[0020] In addition, this embodiment can also avoid the existence of blind areas in disinfection, thereby achieving a more complete disinfection effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 A schematic diagram of the structure of a high-power deep ultraviolet LED sterilization lamp panel provided in an embodiment of the utility model;

[0022] Figure 2 A circuit diagram of a deep ultraviolet LED chip provided in an embodiment of the utility model;

[0023] Figure 3 The distance between the emission source and the detector is L = 0.5m, k α =0.5m, P(θ)=1, the comparison of simulation results of single scattering approximation model and Monte Carlo model;

[0024] Figure 4 The distance between the emission source and the detector is L = 1m, k α =1m, P(θ)=1, the comparison of simulation results of single scattering approximation model and Monte Carlo model;

[0025] Figure 5 It is a schematic diagram of the relationship between the irradiance and detection distance of the existing light panel;

[0026] Figure 6Schematic diagram of the relationship between the irradiance and detection distance of the light panel of this embodiment. DETAILED DESCRIPTION

[0027] In order to make the purpose, technical solution and advantages of the utility model more clear, the utility model is further described in detail in conjunction with the embodiments below. It should be understood that the specific embodiments described here are only used to explain the utility model and are not used to limit the utility model.

[0028] refer to Figure 1 As shown, the embodiment of the utility model discloses a high-power deep ultraviolet LED sterilization lamp panel, which includes:

[0029] Heat dissipation substrate 2;

[0030] The deep ultraviolet LED chip 1 is fixedly mounted on the heat dissipation substrate 2 in a predetermined arrangement; wherein the angle range of the irradiation cone angle θ of the deep ultraviolet LED chip is 30° to 45°, and the chip spacing D between adjacent deep ultraviolet LED chips 1 is calculated based on the distance at which obvious light power collapse occurs.

[0031] In this embodiment, in particular, the heat dissipation substrate 2 is a copper heat dissipation substrate with a regular hexagon and a thickness of 1.5 mm, which mainly serves the purpose of fixing the deep ultraviolet LED chip 1 and dissipating the heat of the deep ultraviolet LED chip 1. Of course, it should be noted that in other embodiments of the utility model, the shape, thickness and material of the heat dissipation substrate 2 can also be selected according to actual needs, for example, an aluminum heat dissipation substrate can be selected, and these solutions are also within the protection scope of the utility model.

[0032] In this embodiment, in particular, the number of the deep ultraviolet LED chips 1 is 16, which are divided into 8 groups, and each group includes 2 deep ultraviolet LED chips connected in series.

[0033] Among them, the deep ultraviolet LED chip 1 is a gallium nitride semiconductor deep ultraviolet LED, model DLP (COBCu) -263M35C6, its output center wavelength is 265nm, and the luminous power of a single deep ultraviolet LED chip is 263mW. Therefore, the total luminous power of the lamp board is 4.2W.

[0034] Of course, it should be noted that in other embodiments of the present invention, the number and light-emitting power of the deep ultraviolet LED chips 1 can also be set according to actual needs, and the present invention does not make specific limitations.

[0035] In this embodiment, in particular, it also includes a positive electrode pad 3 and a negative electrode pad 3 arranged on the heat dissipation substrate, and the positive electrode pad and the negative electrode pad are connected to the 11.6V switching power supply through a 24AMG red connecting line 4 and a 24AMG black connecting line 5 respectively.

[0036] In this embodiment, in particular, it also includes heat dissipation holes 8 opened on the heat dissipation substrate.

[0037] The heat dissipation holes 8 are used to further improve the heat dissipation capacity of the lamp board. The positions and numbers of the heat dissipation holes 8 can be set according to actual needs, and the present invention does not make specific restrictions.

[0038] In this embodiment, in particular, it also includes a housing fixing hole 7 opened on the heat dissipation substrate.

[0039] The housing fixing hole 7 is used to fix the lamp panel as a whole on the lamp housing.

[0040] In this embodiment, in particular, a wire outlet hole 6 is also included, and the wire outlet hole 6 is used to lead out the 24AMG red connecting wire 4 and the 24AMG black connecting wire 5.

[0041] In this embodiment, in particular, the irradiation cone angle θ of the deep ultraviolet LED chip 1 is 45°, and the chip spacing D between adjacent deep ultraviolet LED chips 1 is:

[0042]

[0043] L' is the distance at which the light power collapses significantly. The irradiation cone angle refers to the irradiation angle of the lamp, that is, the cone angle of the light cone.

[0044] The reasons for this setting are:

[0045] The ultraviolet atmospheric transmission system consists of the atmospheric medium, the emission detection system and the boundary. The atmospheric medium is the atmosphere near the ground or in the low altitude; the boundary is identified as obstacles, the ground, etc., and it is assumed that the boundary completely absorbs the incident radiation.

[0046] Assuming that the atmosphere is uniformly distributed and the radiation transmission satisfies Lambert-Beer's law, the main factors affecting the transmission of ultraviolet light in the atmosphere are: atmospheric absorption, scattering of atmospheric molecules and scattering of aerosols.

[0047] (1) Atmospheric absorption: the attenuation of monochromatic radiation along the path when it is transmitted in a uniform atmosphere.

[0048] I λ =I 0λ exp(-k λe l)

[0049] Where 1 is the transmission path, k λe is the atmospheric extinction coefficient, which is equal to the atmospheric absorption coefficient and scattering coefficient sum;

[0050] (2) Atmospheric scattering: The size parameter of atmospheric molecules (radius size r≈10-10m) is x=2πr / λ, which is about 10-3, satisfying the Rayleigh scattering approximation x<<1. The Rayleigh ultraviolet light scattering phase function can be expressed as:

[0051]

[0052] Where θ is the scattering angle.

[0053] (3) Aerosol scattering: The scale spectrum of atmospheric aerosols is relatively large, ranging from Aitken nuclei to haze in the range of 0.001 to 1 μm. The corresponding scale parameter x ranges from 10-2 to 10, which is basically in the Mie scattering range of 0.1<<50. Aerosol particles of different sizes have different scattering characteristics for ultraviolet light, which can be expressed as

[0054]

[0055] Where g is the asymmetric factor of atmospheric aerosol. The molecular density in the near-ground atmosphere is very high, and the absorption and scattering of ultraviolet light are very significant. The type and density of aerosols vary greatly in different locations and weather conditions. Therefore, the absorption and scattering of ultraviolet light are greatly affected by meteorological conditions.

[0056] The Monte Carlo method is used to simulate the non-line-of-sight transmission of ultraviolet light in the atmosphere, mainly including the interaction between photons and particles and obstacles in the atmosphere. The motion direction of photons, scattering free path, scattering point, scattering direction and absorption attenuation of photon weights must be determined in the simulation.

[0057] Ultraviolet photons may be absorbed by atmospheric components during transmission. Assuming that after the transmission distance L, the weight W of the photon is reduced to W′

[0058] W′=Wexp(-k λa L)

[0059] Starting from the emission of photons from the ultraviolet light source, the transmission of photons ends in the following three cases:

[0060] 1) The photon hits an obstacle or the ground;

[0061] 2) Photons enter the detector;

[0062] 3) The number of photon scattering times reaches a certain value N or the weight decays to a negligible level.

[0063] When the jth ultraviolet photon is scattered for the nth time, calculate the probability of it entering the detector per unit area:

[0064]

[0065] where k α and k e are the extinction coefficient and absorption coefficient, respectively, i is the scattering free path before the i-th scattering, l′ i is the distance between the scattering point and the detector during the i-th scattering, and γ is l′ i The angle with the normal of the detection surface.

[0066] When J ultraviolet photons are emitted in the form of infinitely narrow pulses, the relative intensity of the ultraviolet light detected by the detector is distributed over time as follows:

[0067]

[0068] When J, N→∞, H(t) can be considered as the response function of the ultraviolet light signal transmitted in the near-Earth atmosphere.

[0069] Simulation results:

[0070] The distance between the emission source and the detector is L = 0.5m, k α =0.5m, P(θ)=1, the Monte Carlo model is used for simulation calculation, and the simulation results are as follows Figure 3 shown.

[0071] The distance between the emission source and the detector is L = 1m, k α =1m, P(θ)=1, the Monte Carlo model is used for simulation calculation, and the simulation results are as follows Figure 4 shown.

[0072] like Figure 5 As shown, with the increase of detection distance, the detection energy decays exponentially. When the detector distance is about 5 cm, a depression appears and the detected energy is almost zero, that is, there is a detection blind spot. With the further increase of detection distance, the energy increases, reaches a small peak and then continues to decay.

[0073] Therefore, in order to avoid obvious power sag during the light source irradiation process, the chip irradiation cone angle of this embodiment is θ=45°, and the chip spacing in the layout is

[0074]

[0075] Where D is the chip spacing in the panel layout, and L' is the distance where the optical power collapse occurs. When L' = 5cm, D = 7.072cm, the irradiance (detection energy) changes with the detection distance as shown in the figure below: Figure 6 As shown, it can be seen that there is no obvious power sag in this embodiment, that is, there is no detection blind area.

[0076] To sum up, the embodiment of the utility model can realize a high-efficiency, high-power, low-power deep ultraviolet LED sterilization lamp board, which is suitable for small disinfection and sterilization lamps. Its overall circuit area is very small and is very suitable for use in stations, schools, hotels, hospitals and other places.

[0077] In addition, this embodiment can also avoid the existence of blind areas in disinfection, thereby achieving a more complete disinfection effect.

[0078] The above is a preferred embodiment of the present invention. It should be pointed out that a person skilled in the art can make several improvements and modifications without departing from the principle of the present invention. These improvements and modifications are also considered to be within the protection scope of the present invention.

Claims

1. A high-power deep ultraviolet LED sterilization lamp panel, It is characterized in that include: Heat dissipation substrate; The deep ultraviolet LED chip is fixedly mounted on the heat dissipation substrate in a predetermined arrangement; wherein the irradiation cone angle θ of the deep ultraviolet LED chip ranges from 30° to 45°. 0 The chip spacing D between adjacent deep ultraviolet LED chips is calculated based on the distance L' at which obvious light power collapse occurs.

2. The high-power deep ultraviolet LED sterilization lamp panel according to claim 1, It is characterized in that The calculation formula for the chip spacing D between adjacent deep ultraviolet LED chips is:

3. The high-power deep ultraviolet LED sterilization lamp panel according to claim 1, It is characterized in that The heat dissipation substrate is a copper heat dissipation substrate with a regular hexagon shape and a thickness of 1.5 mm.

4. The high-power deep ultraviolet LED sterilization lamp panel according to claim 1, It is characterized in that The number of the deep ultraviolet LED chips is 16, which are divided into 8 groups, and each group includes 2 deep ultraviolet LED chips connected in series.

5. The high-power deep ultraviolet LED sterilization lamp panel according to claim 4, It is characterized in that The deep ultraviolet LED chip is a gallium nitride semiconductor deep ultraviolet LED, model DLP (COBCu) -263M35C6, its output center wavelength is 265nm, the luminous power of a single deep ultraviolet LED chip is 263mW, and the total luminous power of the lamp board is 4.2W.

6. The high-power deep ultraviolet LED sterilization lamp panel according to claim 1, It is characterized in that It also includes a positive electrode pad and a negative electrode pad arranged on the heat dissipation substrate, and the positive electrode pad and the negative electrode pad are connected to an 11.6V switching power supply through a 24AMG red connecting wire and a 24AMG black connecting wire respectively.

7. The high-power deep ultraviolet LED sterilization lamp panel according to claim 6, It is characterized in that It also includes outlet holes for leading out the 24AMG red connecting wire and the 24AMG black connecting wire.

8. The high-power deep ultraviolet LED sterilization lamp panel according to claim 1, It is characterized in that It also includes a shell fixing hole opened on the heat dissipation substrate.