Frame type field effect transistor

Abstract

The utility model discloses a frame-type field effect transistor, which belongs to the field of electronic circuit components and reduces the requirement on welding precision, so that the requirement on a chip mounter is lower, and the yield of product production is improved. The packaging structure mainly comprises a plastic packaging body and a chip, the chip is fixed in the plastic packaging body, and the packaging structure is characterized in that a grid electrode frame, a drain electrode frame and a source electrode frame are arranged on the plastic packaging body; the grid electrode frame, the drain electrode frame and the source electrode frame are welded on the chip; a welding module I is arranged on the drain electrode frame; a welding module II is arranged on the source electrode frame; the welding modules I and the welding modules II are arranged in a staggered mode. According to the utility model, the frame is adopted as the substrate, the ports of the same type of the chip are partitioned, the substrate of the frame is designed according to the partitions of the chip, and then the chip is welded on the partitioned frame in a flip-chip manner, so that compared with spot welding flip-chip welding, the requirement on accuracy is lower, and the cost of the frame is also lower.

Description

Technical Field

[0001] The utility model relates to the field of electronic circuit components, and in particular to a frame-type field effect tube. Background Art

[0002] In the prior art, an application with publication number CN2938705Y discloses a welding area of ​​a field effect tube, which includes a plurality of first welding pads corresponding to the large pins of the field effect tube. The welding of the plurality of first welding pads and the large pins of the field effect tube is better, and solder paste is saved because the total area is reduced. However, its welding technology is mainly that each welding point corresponds to a welding pad, and high welding precision is required. A special flip-chip welding machine is required, which is more suitable for situations with multiple ports such as integrated circuits. The field effect tube itself has fewer types of ports. Therefore, the use of this type of flip-chip welding will not only increase the production cost, but also reduce the yield of product production due to the high requirements for process precision.

[0003] Currently, there is a lack of a frame-type field effect transistor to complete the packaging of chips with fewer port types. Summary of the invention

[0004] The purpose of the utility model is to provide a frame-type field effect tube, which reduces the requirements for welding precision, and thus has relatively low requirements for a chip mounter, thereby improving the yield rate of product production.

[0005] The utility model is realized by the following technical solutions:

[0006] A frame-type field effect transistor comprises a plastic package and a chip, wherein the chip is fixed in the plastic package, and a gate frame, a drain frame and a source frame are arranged on the plastic package; the gate frame, the drain frame and the source frame are welded on the chip; a welding module I is arranged on the drain frame; a welding module II is arranged on the source frame; the welding modules I and II are arranged alternately; and a plurality of pins are arranged on both the drain frame and the source frame.

[0007] Furthermore, the welding module I and the welding module II each include a plurality of welding bars, and the plurality of welding bars are finger-shaped; the welding module I and the welding module II are staggered.

[0008] Furthermore, the source frame is provided with a welding module III and pins.

[0009] Furthermore, the drain frame is provided with four pins; the gate frame is provided with three pins; the source frame is provided with one pin, and the pins all extend out of the plastic package.

[0010] Furthermore, the pins are provided with locking holes for fixing the positions of the frames.

[0011] Furthermore, a waterproof groove is provided on the pin.

[0012] Furthermore, the gate frame, drain frame and source frame are all made of copper-plated silver frames.

[0013] Furthermore, the chip is a gallium nitride chip.

[0014] Compared with the prior art, the beneficial effects of the utility model are:

[0015] 1. The utility model adopts a frame as a base, first partitions the ports of the same type of chips, designs the frame base according to the chip partitions, and then flip-chip welds the chip on the partition frame. Compared with spot welding flip-chip welding, it has lower precision requirements and lower frame costs, and is suitable for packaging chips with fewer port types such as gallium nitride.

[0016] 2. The drain frame and the source frame of the utility model are staggered, which is beneficial to the welding of different areas and convenient for flip-chip welding.

[0017] 3. The utility model adopts a silver-plated copper frame, which has excellent performance when used, can effectively increase the shear tension of the soldered chip, and uses a plastic packaging material that is compatible with the expansion coefficient of the frame, which can improve the reliability of the product affected by temperature and effectively reduce the temperature stress on the chip. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 It is a structural schematic diagram of the utility model;

[0019] Figure 2 It is a schematic diagram of the structure of the gate frame, the drain frame and the source frame of the utility model.

[0020] In the figure: 1. Plastic package; 2. Source frame; 3. Drain frame; 4. Locking hole; 5. Gate frame; 6. Pins; 7. Welding module I; 8. Welding module II; 9. Chip; 10. Welding module III. DETAILED DESCRIPTION

[0021] In order to enable those skilled in the art to better understand the technical solution of the present invention, the technical solution of the present invention is clearly and completely described below in conjunction with the drawings of the present invention. Based on the embodiments in this application, other similar embodiments obtained by ordinary technicians in this field without creative work should all fall within the scope of protection of this application. In addition, the directional words mentioned in the following embodiments, such as "up", "down", "left", "right", etc., are only referenced to the directions of the drawings. Therefore, the directional words used are used to illustrate rather than limit the creation of the present invention.

[0022] The utility model is further described below in conjunction with the accompanying drawings.

[0023] Embodiment 1: A frame-type field effect transistor, such as Figure 1-Figure 2 As shown, it includes a plastic package 1 and a chip 9, the chip 9 is fixed in the plastic package 1, the plastic package 1 is provided with a gate frame 5, a drain frame 3 and a source frame 2, and eight pins 6 are fixedly connected around the plastic package 1, and the corresponding chip 9 functional areas are connected through different frame partitions; the gate frame 5, the drain frame 3 and the source frame 2 are welded on the chip 9; the drain frame 3 is provided with a welding module I7; the source frame 2 is provided with a welding module II8; the welding module I7 and the welding module II8 are staggered; the source frame 2 is spot-welded to the source area of ​​the chip 9, the drain frame 3 is spot-welded to the drain area of ​​the chip 9, and the gate frame 5 is spot-welded to the gate area of ​​the chip 9; the frame and the chip 9 are encapsulated in the plastic package 1.

[0024] Embodiment 2, a frame-type field effect transistor, the welding module I7 and the welding module II8 each include four welding strips, and the welding strips are in the shape of fingers; the welding module I7 and the welding module II8 are staggered, which is conducive to regional welding and convenient for flip-chip welding. The source frame 2 is provided with a welding module III10 and a pin 6. The gate frame 5, the drain frame 3 and the source frame 2 are provided with a plurality of locking mold holes 4. The drain frame 3 is provided with four pins 6; the gate frame 5 is provided with three pins 6; the source frame 2 is provided with a pin 6, and the pins 6 are all extended out of the plastic package 1. The pin 6 is provided with a locking mold hole 4 to fix the position of each frame. The pin 6 is provided with a waterproof groove. The gate frame 5, the drain frame 3 and the source frame 2 are all made of copper-plated silver frames; the silver-plated copper frame has excellent performance when used, can effectively increase the shear tension of the welding chip 9, and the use of a plastic package material adapted to the expansion coefficient of the frame can improve the reliability of the product affected by temperature and effectively reduce the temperature stress of the chip 9. The chip 9 is a gallium nitride chip; the gallium nitride chip has a higher switching speed, and the gallium nitride device has a faster carrier migration speed and high electron mobility, is more outstanding in high-frequency applications, has a shorter switching time and a higher operating frequency. The rest is the same as in Example 1.

[0025] The present application proposes a frame-type field effect transistor. The welding method adopted is different from the ordinary flip-chip welding in that a frame is used as a base instead of a PCB. The ports of the same type of chip 9 are first partitioned, and the frame base is designed according to the chip 9 partitions. Then, the chip 9 is flip-chip welded on the partition frame. Compared with the spot welding flip-chip welding, the precision requirement is lower and the frame cost is also lower. It is suitable for the packaging of chips 9 with fewer port types such as gallium nitride.

[0026] The present invention has been described in detail above. The above description is only a preferred embodiment of the present invention and should not limit the scope of implementation of the present invention. That is, all equivalent changes and modifications made within the scope of this application should still fall within the scope of the present invention.

Claims

1. A frame-type field effect transistor, comprising a plastic package (1) and a chip (9), wherein the chip (9) is fixed in the plastic package (1). Features: The plastic package (1) is provided with a gate frame (5), a drain frame (3) and a source frame (2); the gate frame (5), the drain frame (3) and the source frame (2) are welded to a chip (9); the drain frame (3) is provided with a welding module I (7); the source frame (2) is provided with a welding module II (8); the welding module I (7) and the welding module II (8) are arranged alternately; and a plurality of pins (6) are provided on both the drain frame (3) and the source frame (2).

2. The frame-type field effect transistor according to claim 1, Features: The welding module I (7) and the welding module II (8) both include a plurality of welding bars, and the plurality of welding bars are finger-shaped; the welding module I (7) and the welding module II (8) are staggered.

3. The frame-type field effect transistor according to claim 1, Features: The source frame (2) is provided with a welding module III (10) and pins (6).

4. The frame-type field effect transistor according to claim 2, Features: The drain frame (3) is provided with four pins (6); the gate frame (5) is provided with three pins (6); the source frame (2) is provided with one pin (6), and the pins (6) all extend out of the plastic package (1).

5. The frame-type field effect transistor according to claim 4, Features: The pin (6) is provided with a locking hole (4).

6. The frame-type field effect transistor according to claim 5, Features: The pin (6) is provided with a waterproof groove.

7. The frame-type field effect transistor according to claim 1, Features: The gate frame (5), drain frame (3) and source frame (2) are all copper-silver-plated frames.

8. The frame-type field effect transistor according to claim 1, Features: The chip (9) is a gallium nitride chip.

Images