Base assembly for chemical vapor deposition equipment and chemical vapor deposition equipment

Abstract

The utility model discloses a base assembly for chemical vapor deposition equipment and the chemical vapor deposition equipment, and the base assembly comprises an air floating base which comprises a first surface and is provided with a rotating shaft bottom accommodating groove sunken in the first surface; the plurality of wafer pedestals are arranged on the first surface, the plurality of wafer pedestals are distributed along the circumferential direction of the air floating pedestal, the wafer pedestals are used for bearing wafers, each wafer pedestal comprises a second surface, the second surface is arranged opposite to the first surface, and each wafer pedestal is provided with a rotating shaft top accommodating groove recessed in the second surface; at least one of the wafer base and the air floatation base comprises an embedded part, and the hardness of the material of the embedded part is greater than the hardness of the material of the wafer base and the air floatation base; the rotating shaft is arranged between the wafer base and the air floating base, one end of the rotating shaft is embedded into the rotating shaft bottom containing groove, the other end of the rotating shaft is embedded into the rotating shaft top containing groove, and at least one end of the rotating shaft makes contact with the embedded part. The base assembly is beneficial to improving the perpendicularity of the rotating shaft and the wafer base.

Description

Technical Field

[0001] The utility model relates to the field of semiconductors, in particular to a base assembly for chemical vapor deposition equipment and the chemical vapor deposition equipment. Background Art

[0002] In chemical vapor deposition equipment, a base assembly is used to drive the wafer to rotate in the chamber. Figure 1 As shown, the base assembly includes a wafer base 2 and an air-floating base 1, and the wafer base 2 is used to carry the wafer and rotate on the air-floating base 1. A rotating shaft 3 is provided between the air-floating base 1 and the wafer base 2, and the shaft body of the rotating shaft 3 is respectively located in the air-floating base 1 and the wafer base 2. During the process, the gas drives the wafer base 2 to rotate around the rotating shaft 3, and friction is generated between the rotating shaft 3 and the air-floating base 1 and the wafer base 2, resulting in a larger matching clearance between the rotating shaft 3 and the air-floating base 1 and the wafer base 2, so that the matching of the rotating shaft 3 and the wafer base 2 is no longer vertical, and the rotational motion trajectory of the wafer base 2 is no longer a concentric circle, but an ellipse or unstable rotation, which not only disrupts the process airflow at the wafer, but also causes uneven wafer temperature and reduces the processing quality of the wafer surface. Utility Model Content

[0003] The utility model aims to provide a base assembly for chemical vapor deposition equipment and chemical vapor deposition equipment, which can ensure the verticality of the rotating axis and the wafer base.

[0004] To achieve the above-mentioned purpose, the utility model provides a base assembly for chemical vapor deposition equipment, which comprises: an air-floating base, which comprises a first surface, and the air-floating base has a bottom receiving groove of a rotating shaft recessed in the first surface; a plurality of wafer bases, which are arranged on the first surface, and the plurality of wafer bases are distributed along the circumference of the air-floating base, each of the wafer bases is used to carry a wafer, the wafer base comprises a second surface, the second surface is arranged opposite to the first surface, and the wafer base has a top receiving groove of a rotating shaft recessed in the second surface; at least one of the wafer base and the air-floating base comprises an embedding part, and the hardness of the embedding part material is greater than the hardness of the main body material of the wafer base and the air-floating base; a rotating shaft, which is arranged between the wafer base and the air-floating base, one end of which is embedded in the bottom receiving groove of the rotating shaft, and the other end of which is embedded in the top receiving groove of the rotating shaft, and at least one end of the rotating shaft contacts the embedding part.

[0005] Optionally, the wafer base includes the embedding component, and the wafer base also includes a wafer base body, the wafer base body includes the second surface, the second surface is arranged opposite to the first surface, the wafer base body has a first groove recessed in the second surface, the first groove is arranged opposite to the bottom receiving groove of the rotating shaft, the embedding component is arranged in the first groove, and the embedding component is provided with the top receiving groove of the rotating shaft.

[0006] Optionally, the material of the wafer base body includes: graphite; the material of the embedding part includes: silicon carbide or Si3N4.

[0007] Optionally, it also includes: a protective layer coated on the second surface and the surface of the embedded part.

[0008] Optionally, the wafer base body further includes a third surface, the third surface is arranged opposite to the second surface, and the distance from the bottom of the first groove to the third surface is greater than 0.

[0009] Optionally, the top angle of the receiving groove at the top of the rotating shaft is chamfered; and the first embedding piece fits with the side wall of the first groove.

[0010] Optionally, the height of the first embedding piece is less than or equal to the depth of the first groove.

[0011] Optionally, the air floating base includes the embedding component, the air floating base also includes an air floating base body, the air floating base body includes the first surface, the air floating base body has a second groove recessed in the first surface, the embedding component is arranged in the second groove, and the embedding component has a bottom accommodating groove of the rotating shaft.

[0012] Optionally, the material of the air-floating base body includes graphite; the material of the embedded component includes silicon carbide or Si3N4.

[0013] Optionally, the top angle of the receiving groove at the bottom of the rotating shaft is chamfered; and the embedded part fits with the side wall of the second groove.

[0014] Optionally, the height of the embedding piece is less than or equal to the depth of the second groove.

[0015] Optionally, it also includes: a protective layer coated on the first surface and the second embedded surface.

[0016] Optionally, the material of the protective layer includes: silicon carbide.

[0017] Optionally, the material of the rotating shaft includes SiC or molybdenum.

[0018] Accordingly, the utility model also provides a chemical vapor deposition device, the chemical vapor deposition device comprising:

[0019] Reaction chamber;

[0020] As the base assembly mentioned above, the base assembly is arranged in the reaction chamber, and the base assembly is used to carry the wafer to be processed;

[0021] A driving gas inlet assembly, the driving gas inlet assembly being connected to the base assembly and used for supplying gas to the base assembly to drive the wafer base to rotate relative to the air-floating base;

[0022] A process gas inlet assembly is disposed at the top of the reaction chamber, opposite to the base assembly, and is used to transport process gas into the reaction chamber to perform process treatment on the wafer.

[0023] Compared with the prior art, the technical solution of the utility model has at least the following beneficial effects:

[0024] In the base assembly for chemical vapor deposition equipment provided by the utility model, at least one of the wafer base and the air-floating base includes an embedded part, and at least one end of the rotating shaft contacts the embedded part. Since the material hardness of the embedded part is relatively large, when the wafer base rotates around the rotating shaft, the embedded part is not easy to be worn, so that the matching clearance between the wafer base and the rotating shaft, or the matching clearance between the air-floating base and the rotating shaft is not easy to increase, so that the verticality of the rotating shaft and the wafer base is good, and the rotational motion trajectory of the wafer base remains concentric, which is not easy to disturb the process airflow at the wafer, which is conducive to improving the uniformity of the wafer temperature and improving the processing quality of the wafer surface. In addition, the service life of the wafer base can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 The figure is a schematic diagram of the structure of a base assembly.

[0026] Figure 2 This is a schematic diagram of the structure of a chemical vapor deposition device of the utility model;

[0027] Figure 3 It is a schematic diagram of the three-dimensional structure of the wafer base of the utility model;

[0028] Figure 4 for Figure 3 Schematic diagram of the cross-section structure along line A-A1;

[0029] Figure 5 To include Figure 4 A schematic diagram of the structure of a base assembly of a wafer base;

[0030] Figure 6 It is a top view of the driving airway on the air floating base in the utility model;

[0031] Figure 7 This is a structural schematic diagram of an air flotation base of the utility model;

[0032] Figure 8 To include Figure 7 A schematic diagram of the structure of the base assembly of the air floating base;

[0033] Fig. 9 This is a structural schematic diagram of another base assembly of the utility model;

[0034] Fig.10 This is a schematic structural diagram of a wafer base of the utility model;

[0035] Fig.11 It is a structural schematic diagram of another wafer base of the utility model. DETAILED DESCRIPTION

[0036] The following will be combined with the appended examples in the present utility model Figure 2 ~Attached Fig.11 , the technical scheme, structural features, objectives achieved and effects in the embodiments of the utility model are described in detail.

[0037] It should be noted that the drawings are in a very simplified form and use non-precise proportions. They are only used to conveniently and clearly assist in explaining the implementation methods of the utility model, and are not used to limit the conditions for the implementation of the utility model. Therefore, they have no substantive technical significance. Any structural modification, change in proportional relationship or adjustment of size should still fall within the scope of the technical content disclosed by the utility model without affecting the efficacy and purpose that can be achieved by the utility model.

[0038] It should be noted that, in the present invention, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only the elements explicitly listed, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device.

[0039] As described in the background technology, friction occurs between the rotating shaft and the air floating base and the wafer base, causing the matching clearance between the rotating shaft and the air floating base and the wafer base to become larger, so that the rotating shaft and the wafer base are no longer perpendicular to each other, and the rotational motion trajectory of the wafer base is no longer a concentric circle, but an elliptical or unstable rotation, which disrupts the process airflow at the wafer, resulting in uneven wafer temperature and reduced processing quality on the wafer surface.

[0040] In order to solve this technical problem, the utility model provides a base assembly for chemical vapor deposition equipment, including an air-floating base, a wafer base and a rotating shaft located therebetween, wherein at least one of the wafer base and the air-floating base includes an embedded part, and the hardness of the embedded part material is greater than the hardness of the main body material of the wafer base and the air-floating base. Due to the greater hardness of the embedded part, the wafer base is not easily worn during the process of rotating around the rotating shaft, which is conducive to improving the verticality of the rotating shaft and the wafer base.

[0041] Figure 2 The utility model is a schematic diagram of the structure of a chemical vapor deposition device.

[0042] Please refer to Figure 2In the chemical vapor deposition device 40, the chemical vapor deposition device 40 includes a reaction chamber 410, a base assembly 10, a driving gas intake assembly 420 and a process gas intake assembly 430. The reaction chamber 410 is used to accommodate wafers and perform process treatment on the wafers. The base assembly 10 is arranged in the reaction chamber 410, and the base assembly 10 includes a wafer base 200, an air floating base 100 and a rotating shaft 300. The process gas intake assembly 430 is arranged at the top of the reaction chamber 410, opposite to the base assembly 10, and is used to transport process gas into the reaction chamber 410 to perform process treatment on the wafer. The air floating base 100 is used to support the wafer base 200, and the wafer base 200 is used to support the wafer to be processed. A plurality of wafer bases 200 are provided along the circumferential direction of the air-floating base 100, and the plurality of wafer bases 200 are evenly distributed along the circumferential direction of the air-floating base 100, wherein each wafer base 200 rotates on the air-floating base 100 via a rotating shaft 300. The driving gas inlet assembly 420 is connected to the driving gas channel 150 on the base assembly 10, and the driving gas inlet assembly 420 is used to supply gas to the driving gas channel 150 in the base assembly 10, so that an air film is formed between the wafer base 200 and the air-floating base 100 and the wafer base 200 is driven to rotate relative to the air-floating base 100. The base assembly 10 also includes a driving assembly, which is connected to the air-floating base 100 to drive the air-floating base 100 to rotate. When processing the wafer on the wafer base 200, the wafer base 200 drives the wafer to rotate around the central axis of the wafer base 200, and the air-floating base 100 drives the wafer base 200 to rotate around the central axis of the air-floating base 100. The wafer base 200 rotates around the rotation axis 300 under the action of air buoyancy and cyclone, and at the same time, it revolves around the central axis of the air-floating base 100 under the drive of the air-floating base 100. The structure of the air-floating base 100 and the wafer base 200 is similar to that of a planet that rotates and revolves around a star at the same time. Such a configuration enables the wafer to simultaneously rotate and revolve during processing, thereby improving the uniformity of the wafer surface at various locations during the processing process and improving the wafer processing quality.

[0043] Figure 3 It is a schematic diagram of the three-dimensional structure of the wafer base of the utility model; Figure 4 yes Figure 3 Schematic diagram of the cross-sectional structure along line A-A1.

[0044] Please refer to Figure 3 and Figure 4The wafer base 200 includes: a wafer base body 201 and a first embedding component 203, the hardness of the material of the first embedding component 203 is greater than the hardness of the material of the wafer base body 201, the wafer base body 201 includes a second surface B, the wafer base body 201 has a first groove 202 recessed in the second surface B, the first embedding component 203 is arranged in the first groove 202, and the first embedding component 203 is provided with a rotating shaft top accommodating groove 204.

[0045] Please refer to Figure 4 , the top angle of the rotating shaft receiving groove 204 at the top of the first insert 203 is a chamfer, that is, the position a of the first insert 203 is set as a chamfer, which is conducive to the installation of the rotating shaft 300. In addition, the height of the first insert 203 is less than or equal to the depth of the first groove 202, that is, the surface b of the first insert 203 is recessed or flush with the second surface B, so that after the wafer base 200, the air floating base 100 and the rotating shaft 300 are assembled, the gas blown from the driving air channel 150 can make the wafer base 200 rotate along the rotating shaft 300, and prevent the surface b of the first insert 203 from protruding relative to the second surface B, and the gas blown from the driving air channel 150 is blown away from between the wafer base 200 and the air floating base 100, making it difficult to rotate the wafer base 200 along the rotating shaft 300. In addition, the first embedding member 203 is in contact with the side wall of the first groove 202 via the surface c, so as to prevent the first embedding member 203 from being displaced in the first groove 202 .

[0046] The wafer base 200 is used to carry wafers. The material of the wafer base body 201 includes graphite. The material of the first insert 203 should be selected from materials that are resistant to high temperatures (resistant to high temperatures not less than 1200°C), have high strength, high hardness, are wear-resistant, and have a thermal expansion coefficient close to or slightly lower than that of graphite. In addition, the thermal conductivity of the first insert 203 is close to that of graphite. In order to make the temperature of the first insert 203 closer to that of the wafer base body 201, it is beneficial to improve the temperature uniformity of the wafer base 200. For example, the material of the first insert 203 is silicon carbide, Si3N4 or TiC. When the first insert 203 is embedded in the first groove 202 of the wafer base body 201, in order to make the wafer base body 201 and the first insert 203 more tightly combined, the surface of the wafer base body 201 and the first insert 203 are coated with silicon carbide after being assembled.

[0047] Figure 5 To include Figure 4 Schematic diagram of the structure of the base assembly of the wafer base.

[0048] Please refer to Figure 4 and Figure 5 The top receiving groove 204 of the rotating shaft is used to receive the top of the rotating shaft 300. Since the Mohs hardness of silicon carbide is 9.5 and the Mohs hardness of graphite is 1-2, that is, the hardness of silicon carbide is greater than the hardness of graphite, when the wafer base 200 rotates around the rotating shaft 300, the first insert 203 is not easy to be worn, so that the matching clearance between the wafer base 200 and the rotating shaft 300 is not easy to increase, so that the verticality of the rotating shaft 300 and the wafer base 200 is good, and the rotational motion trajectory of the wafer base 200 remains concentric, and it is not easy to disturb the process airflow at the wafer, which is conducive to improving the uniformity of the wafer temperature and improving the processing quality of the wafer surface. And it can reduce the generation of abrasive graphite dust and improve the process quality. And it can improve the service life of the wafer base 200.

[0049] The wafer base body 201 further includes a third surface D, which is disposed opposite to the second surface B. The first groove 202 (see Figure 4 ) from the bottom of the third surface D is greater than 0, that is, the bottom of the first groove 202 is the wafer base body 201.

[0050] Figure 6 The design of the driving air channel 150 at the position of a wafer base 200 corresponding to the air floating base 100 is shown, that is, the air floating base 100 under each wafer base 200 has the driving air channel 150. The driving air channel 150 is provided on the air floating base 100, and the outlet of the driving air channel 150 is located on the first surface C (see Figure 7), the driving air channel 150 is used to supply air between the wafer base 200 and the air-floating base 100, and corresponding to the same wafer base 200, three driving air channels 150 are provided to supply air thereto, and the air outlet of the driving air channel 150 is provided on the first surface C of the air-floating base 100. The gas ejected from the driving air channel 150 is used to drive the wafer base 200 to rotate around the rotation axis 300, and an air gap is formed between the first surface C and the second surface B. When the wafer base 200 rotates relative to the air-floating base 100, in order to reduce the relative friction between the two, gas is introduced between the wafer base 200 and the air-floating base 100 through the driving air channel 150, so that an air film is generated between the wafer base 200 and the air-floating base 100, so as to avoid direct contact between the wafer base 200 and the air-floating base 100, which causes excessive friction when the two rotate relative to each other. At the same time, when the driving air duct 150 supplies air to between the wafer base 200 and the air floating base 100, an air film will also be formed in the gap between the wafer base 200 and the rotating shaft 300, and between the air floating base 100 and the rotating shaft 300. When the wafer base 200 rotates relative to the rotating shaft 300, the air film between the wafer base 200 and the rotating shaft 300, and between the air floating base 100 and the rotating shaft 300 can reduce the friction during rotation, reduce the wear of the rotating shaft 300 during use, and extend the service life of the rotating shaft 300 for high-precision positioning of the wafer base 200.

[0051] like Figure 6 As shown, although the three driving air channels 150 provided on the air flotation base 100 are mainly provided on the periphery of the air flotation base 100, so that the temperature of the peripheral area of ​​the air flotation base 100 is lower than the temperature of the central area E, the wafer base body 201 and the first embedding component 203 above the air flotation base 100 are two components rather than a whole, so the heat transferred from the first embedding component 203 to the third surface D of the wafer base body 201 above it will be partially lost between the first embedding component 203 and the wafer base body 201, so that the heat reaching the third surface D above the central area E is relatively small. Therefore, the embedded structure of the wafer base is beneficial to improving the uniformity of the radial temperature of the third surface D of the wafer base.

[0052] The material of the rotating shaft 300 includes: silicon carbide or metal molybdenum. The material of the rotating shaft 300 needs to be a material with high temperature resistance, good thermal conductivity and high strength.

[0053] Figure 7 The utility model is a structural schematic diagram of an air floating base.

[0054] Please refer to Figure 7The air floating base 100 includes a first surface C, and the air floating base 100 includes: an air floating base body 101 and a second embedding piece 103, the hardness of the material of the second embedding piece 103 is greater than the hardness of the material of the air floating base body 101, the air floating base body 101 has the second groove 102, the second embedding piece 103 is arranged in the second groove 102, and the second embedding piece 103 has the bottom accommodating groove 104 of the rotating shaft.

[0055] Similar to the design of the wafer base 200, the top angle of the second groove 102 is a chamfer, which is conducive to the installation of the rotating shaft 300, and the height of the second insert 103 is less than or equal to the depth of the second groove 102, that is, the second insert 103 is recessed or flush with the first surface C, so that after the wafer base 200, the air floating base 100 and the rotating shaft 300 are assembled, the gas blown from the driving air channel 150 can make the wafer base 200 rotate along the rotating shaft 300, and prevent the second insert 103 from protruding relative to the first surface C, and the gas blown from the driving air channel 150 is blown away from between the wafer base 200 and the air floating base 100, making it difficult to rotate the wafer base 200 along the rotating shaft 300. In addition, the second insert 103 is in contact with the side wall of the second groove 102, preventing the second insert 103 from being displaced in the second groove 102.

[0056] The material of the air-floating base body 101 includes graphite, and the material of the second insert 103 includes silicon carbide. When the second insert 103 is inserted into the second groove 102 of the air-floating base body 101, in order to make the air-floating base body 101 and the second insert 103 closely combined, the surfaces of the air-floating base body 101 and the second insert 103 are coated with silicon carbide after they are assembled.

[0057] Figure 8 To include Figure 7 Schematic diagram of the structure of the base assembly of the air flotation base.

[0058] Please refer to Figure 7 and Figure 8The rotating shaft top receiving groove 204 is used to receive the top of the rotating shaft 300. Since the hardness of the first embedded component 203 is greater than the hardness of the wafer base body 201, when the wafer base 200 rotates around the rotating shaft 300, the first embedded component 203 is not easy to be worn, so that the matching clearance between the wafer base 200 and the top of the rotating shaft 300 is not easy to increase. At the same time, the rotating shaft bottom receiving groove 104 is used to receive the bottom of the rotating shaft 300. Since the hardness of the second embedded component 103 is greater than the hardness of the air-floating base body 101, when the wafer base 200 rotates around the rotating shaft 300, the second embedded component 103 is not easy to be worn, so that the matching clearance between the air-floating base 200 and the bottom of the rotating shaft 300 is not easy to increase. Since the matching clearances between the rotating shaft 300 and the wafer base 200 and the air floating base 100 are not easy to increase, the verticality of the rotating shaft 300 and the wafer base 200 is good, and the rotational motion trajectory of the wafer base 200 remains concentric, which is not easy to disturb the process airflow at the wafer, which is beneficial to improving the uniformity of the wafer temperature and improving the processing quality of the wafer surface.

[0059] Fig. 9 This is a structural schematic diagram of another base assembly of the utility model.

[0060] In this embodiment, the wafer base 200 is a complete whole, and the material of the wafer base 200 is graphite. The air-floating base 100 includes: a floating base body 101 and a second insert 103, the hardness of the material of the second insert 103 is greater than the hardness of the material of the air-floating base body 101, the air-floating base body 101 has the second groove, the second insert 103 is arranged in the second groove, and the second insert 103 has the rotating shaft bottom receiving groove, and the rotating shaft bottom receiving groove is used to receive the bottom of the rotating shaft 300. The material of the air-floating base body 101 includes graphite, and the material of the second embedded component 103 should be selected from a material that is resistant to high temperatures (resistant to high temperatures of not less than 1200°C), has high strength, is wear-resistant, and has a thermal expansion coefficient that is close to or slightly lower than the thermal expansion coefficient of graphite. In addition, the thermal conductivity of the second embedded component 103 is close to that of graphite. In order to make the temperature of the second embedded component 103 closer to the temperature of the air-floating base body 101, it is beneficial to improve the temperature uniformity of the air-floating base 100. For example, the material of the second embedded component 103 includes silicon carbide, Si3N4 or TiC.

[0061] Taking the wafer base as an example, the matching method of the wafer base body and the first embedded component is described in detail below:

[0062] Please refer to Fig.10The wafer base 200 includes a wafer base body 201 and a first embedding component 203 . The wafer base body 201 has a first groove 202 recessed in the second surface B. The first embedding component 203 is disposed in the first groove 202 .

[0063] In this embodiment, the outer surface of the first embedding member 203 is gear-shaped, and the inner surface of the first groove 202 matches the outer surface of the first embedding member 203 .

[0064] In other embodiments, the projection area of ​​the first embedding member 203 on the wafer base body 201 may also be elliptical, circular or polygonal. There is no limitation on the projection pattern of the first embedding member 203 on the wafer base body 201. Similarly, when the air-floating base includes: an air-floating base body and a second embedding member, the projection image of the second embedding member on the air-floating base body may also be gear-shaped, elliptical, circular or polygonal.

[0065] The area size of the first embedded component can be set as required, and the following is explained using a wafer base as an example:

[0066] Please refer to Figure 6 and Fig.11 The area of ​​the first embedding component 203 can be set according to the size of the central area E of the air floating base 100. Since the driving air channel 150 is not set at the position of the central area E of the air floating base 100, the temperature of the central area E is relatively high. The wafer base 200 above this area is set as the first embedding component 203, which is beneficial to reducing the uniformity of the radial temperature of the third surface E of the wafer base 200, and is beneficial to improving the uniformity of the thickness of the thin film formed on the wafer base 200.

[0067] In summary, the wafer base and / or the air flotation base consists of two parts, wherein the part close to the rotating axis 300 is set as a wear-resistant embedment (such as a first embedment or a second embedment). When the wafer base rotates around the rotating axis, the embedment is not easily worn, so that the fitting clearance between the wafer base and the rotating axis, and / or the fitting clearance between the air flotation base and the rotating axis is not easy to increase, so that the verticality of the rotating axis and the wafer base is better, and the rotational motion trajectory of the wafer base remains concentric, which is not easy to disturb the process airflow at the wafer, which is beneficial to improving the uniformity of the wafer temperature and improving the processing quality of the wafer surface.

[0068] Although the content of the utility model has been described in detail through the above preferred embodiments, it should be appreciated that the above description should not be considered as a limitation of the utility model. After reading the above content, various modifications and substitutions of the utility model will be obvious to those skilled in the art. Therefore, the protection scope of the utility model should be limited by the attached claims.

Claims

1. A base assembly for a chemical vapor deposition device, It is characterized in that include: An air-floating base, comprising a first surface, wherein the air-floating base has a rotating shaft bottom receiving groove recessed in the first surface; A plurality of wafer bases are arranged on the first surface, and the plurality of wafer bases are distributed along the circumference of the air-floating base, each of the wafer bases is used to carry a wafer, the wafer base comprises a second surface, the second surface is arranged opposite to the first surface, and the wafer base has a rotating shaft top receiving groove recessed in the second surface; At least one of the wafer base and the air-floating base comprises an embedding member, wherein the hardness of the embedding member material is greater than the hardness of the main body material of the wafer base and the air-floating base; The rotating shaft is arranged between the wafer base and the air floating base, one end of which is embedded in the bottom receiving groove of the rotating shaft, and the other end of which is embedded in the top receiving groove of the rotating shaft. At least one end of the rotating shaft contacts the embedding part.

2. The susceptor assembly for chemical vapor deposition equipment according to claim 1, It is characterized in that The wafer base includes the embedding component, and the wafer base also includes a wafer base body. The wafer base body includes the second surface, and the second surface is arranged opposite to the first surface. The wafer base body has a first groove recessed in the second surface, and the first groove is arranged opposite to the bottom receiving groove of the rotating shaft. The embedding component is arranged in the first groove, and the embedding component is provided with the top receiving groove of the rotating shaft.

3. The susceptor assembly for chemical vapor deposition equipment according to claim 2, It is characterized in that The material of the wafer base body includes: graphite; the material of the embedded part includes: silicon carbide or Si 3 N 4 .

4. The susceptor assembly for chemical vapor deposition equipment according to claim 3, It is characterized in that Also includes: A protective layer is applied to the second surface and the surface of the insert.

5. The susceptor assembly for chemical vapor deposition equipment according to claim 2, It is characterized in that The wafer base body also includes a third surface, which is arranged opposite to the second surface, and the distance from the bottom of the first groove to the third surface is greater than 0.

6. The susceptor assembly for chemical vapor deposition equipment according to claim 2, It is characterized in that The top angle of the accommodating groove at the top of the rotating shaft is chamfered; the embedded part is fitted with the side wall of the first groove.

7. The susceptor assembly for chemical vapor deposition equipment according to claim 2 or 6, It is characterized in that The height of the embedding part is less than or equal to the depth of the first groove.

8. The susceptor assembly for chemical vapor deposition equipment according to claim 1, It is characterized in that The air-floating base includes the embedding component, and the air-floating base also includes an air-floating base body. The air-floating base body includes the first surface, and the air-floating base body has a second groove sunken in the first surface. The embedding component is arranged in the second groove, and the embedding component has a bottom accommodating groove of the rotating shaft.

9. The susceptor assembly for chemical vapor deposition equipment according to claim 8, It is characterized in that The material of the air-floating base body includes: graphite; the material of the embedded part includes: silicon carbide or Si 3 N 4 .

10. The susceptor assembly for chemical vapor deposition equipment according to claim 8, It is characterized in that The top angle of the receiving groove at the bottom of the rotating shaft is chamfered; the embedded part is fitted with the side wall of the second groove.

11. The susceptor assembly for chemical vapor deposition equipment according to claim 8 or 10, It is characterized in that The height of the embedding part is less than or equal to the depth of the second groove.

12. The susceptor assembly for a chemical vapor deposition apparatus according to claim 8, It is characterized in that Also includes: A protective layer is applied to the first surface and the surface of the insert.

13. The susceptor assembly for chemical vapor deposition equipment according to claim 4 or 12, It is characterized in that The material of the protective layer includes: silicon carbide.

14. The susceptor assembly for a chemical vapor deposition apparatus according to claim 1, It is characterized in that The material of the rotating shaft includes SiC or molybdenum.

15. A chemical vapor deposition apparatus, It is characterized in that The chemical vapor deposition equipment comprises: Reaction chamber; The susceptor assembly according to any one of claims 1 to 14, wherein the susceptor assembly is disposed in the reaction chamber, and the susceptor assembly is used to carry a wafer to be processed; A driving gas inlet assembly, the driving gas inlet assembly being connected to the base assembly and used for supplying gas to the base assembly to drive the wafer base to rotate relative to the air-floating base; A process gas inlet assembly is disposed at the top of the reaction chamber, opposite to the base assembly, and is used to transport process gas into the reaction chamber to perform process treatment on the wafer.

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