Heat dissipation device and semiconductor laser

Abstract

The utility model relates to the technical field of lasers, in particular to a heat dissipation device and a semiconductor laser. The heat dissipation device provided by the utility model comprises a heat sink and a cooling plate, the semiconductor laser comprises a laser chip, the laser chip is installed on the heat sink, the heat sink is installed on the cooling plate, a heat dissipation channel is arranged in the cooling plate, the heat dissipation channel is arranged corresponding to the laser chip, and the heat dissipation channel is communicated with the laser chip. In the longitudinal section of the heat dissipation channel, the sectional area of the middle portion of the heat dissipation channel is larger than that of the two ends of the heat dissipation channel, so that more refrigerants circulate in the middle of the heat dissipation channel, the flow speed of the cooling media is larger, the heat dissipation capacity of the middle portion in the vertical direction is better, and the heat dissipation capacity of the middle portion is better than that of the two ends. The utility model can balance the situation of non-uniform heat distribution caused by the fact that the calorific value in the middle of the laser chip is greater than the calorific values at the two ends, and can realize the consistency of the horizontal temperature of the laser chip, thereby reducing the slow-axis far-field divergence angle and improving the luminance.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor lasers, in particular to a heat dissipation device and a semiconductor laser. Background Art

[0002] Semiconductor lasers are widely used in various industries such as advanced industrial manufacturing, military, aerospace, medical cosmetology, lighting and display. With the development of industrial production, the requirements for the power, brightness and reliability of semiconductor lasers are getting higher and higher.

[0003] Semiconductor lasers generate a lot of heat when working, which affects the operation of the equipment. Therefore, current semiconductor lasers have high requirements for heat dissipation performance. In the prior art, the laser chip of the semiconductor laser is set on a heat sink, and the heat sink is set on a cooling plate. A heat dissipation channel is set in the cooling plate, and the laser chip thereon is dissipated through the cooling plate and the heat sink. The channel heat dissipation structure corresponds to the heat sink setting, which is usually a rectangular channel with the same cross-sectional area, so its heat dissipation efficiency is consistent, but the temperature in the middle of the laser chip is higher than the temperature at both ends, resulting in inconsistent temperatures in the middle and two sections of the chip after heat dissipation. The heat dissipation of the laser chip through the existing channel cannot maintain the consistency of the temperature of the laser chip, which will cause the slow axis far-field divergence angle of the semiconductor laser to increase and the brightness to decrease. Utility Model Content

[0004] (I) The technical problem to be solved by the present utility model is: currently, semiconductor lasers dissipate heat from laser chips through microchannels in cooling plates, but the heat generation of the laser chips is uneven, which makes it impossible to keep the temperatures of various parts of the laser chips consistent, and the slow-axis far-field divergence angle of the laser chips increases, thereby reducing the brightness.

[0005] (II) Technical solution

[0006] In order to solve the above technical problems, an embodiment of the utility model provides a heat dissipation device for a semiconductor laser, including a heat sink and a cooling plate, wherein the semiconductor laser includes a laser chip;

[0007] The laser chip is arranged on the heat sink, the heat sink is arranged on the cooling plate, a heat dissipation channel is arranged in the cooling plate, and the heat dissipation channel is arranged correspondingly on the lower side of the laser chip;

[0008] In the longitudinal section of the heat dissipation channel, the cross-sectional area of ​​the middle portion of the heat dissipation channel is larger than the cross-sectional areas of the two sides of the heat dissipation channel.

[0009] According to an embodiment of the present utility model, the laser chip includes a ridge waveguide, and the projection of the ridge waveguide in the vertical direction falls on the middle of the heat dissipation channel.

[0010] According to an embodiment of the utility model, the laser chip includes a body, and a surface of one side of the body includes a first area corresponding to the position of the ridge waveguide and second areas located on both sides of the first area;

[0011] The first region is provided with an outwardly protruding ridge structure to form the ridge waveguide, a first welding layer is provided between the ridge waveguide and the heat sink, a second welding layer is provided between the second region and the heat sink, and a thickness of the first welding layer is less than a thickness of the second welding layer.

[0012] According to an embodiment of the present invention, in the longitudinal section of the heat dissipation channel, the cross-sectional area of ​​the heat dissipation channel gradually decreases from the middle to both sides.

[0013] According to an embodiment of the present utility model, the longitudinal section of the heat dissipation channel is in an inverted arch shape, and the arch top of the heat dissipation channel is close to the bottom of the cooling plate.

[0014] According to an embodiment of the present utility model, the maximum height of the heat dissipation channel is L1, the maximum width of the heat dissipation channel is L2, the height of the cooling plate is L3, the width of the ridge waveguide is L4, and the width of the laser chip is L5;

[0015] Then 30%<L1:L2<200%, 10%<L1:L3<80%, L4<L2<4*L4, and L2≥L5.

[0016] According to an embodiment of the present utility model, the heat dissipation channel is arched, and the arch top of the heat dissipation channel is arranged close to the laser chip.

[0017] According to an embodiment of the present utility model, the maximum height of the heat dissipation channel is Z1, the maximum width of the heat dissipation channel is Z2, the height of the cooling plate is Z3, the width of the ridge waveguide is Z4, and the width of the laser chip is Z5;

[0018] Then 10%<Z1:Z2<100%, 5%<Z1:Z3<60%, Z4<Z2<6*Z4, and Z2≥Z5.

[0019] According to an embodiment of the utility model, a heat transfer channel is provided in the heat sink, and the heat transfer channel is correspondingly provided at the lower side of the laser chip; the heat transfer channel is connected to the heat dissipation channel, or the heat transfer channel and the heat dissipation channel are independent of each other.

[0020] According to an embodiment of the present invention, the height of the heat sink is d1, the height of the heat transfer channel is d2, and 0.1*d1<d2<0.6*d1.

[0021] Another aspect of the utility model is that an embodiment provides a heat dissipation device for a semiconductor laser, including a heat sink, wherein the semiconductor laser includes a laser chip;

[0022] The laser chip is arranged on the heat sink, and a heat dissipation channel is arranged in the heat sink;

[0023] In the longitudinal section of the heat dissipation channel, the cross-sectional area of ​​the middle portion of the heat dissipation channel is larger than the cross-sectional areas of the two sides of the heat dissipation channel.

[0024] According to an embodiment of the present utility model, the laser chip includes a ridge waveguide, and the projection of the ridge waveguide in the vertical direction falls on the middle of the heat dissipation channel.

[0025] According to an embodiment of the utility model, the laser chip includes a body, and a surface of one side of the body includes a first area corresponding to the position of the ridge waveguide and second areas located on both sides of the first area;

[0026] The first region is provided with an outwardly protruding ridge structure to form the ridge waveguide, a first welding layer is provided between the ridge waveguide and the heat sink, a second welding layer is provided between the second region and the heat sink, and a thickness of the first welding layer is less than a thickness of the second welding layer.

[0027] According to an embodiment of the present invention, in the longitudinal section of the heat dissipation channel, the cross-sectional area of ​​the heat dissipation channel gradually decreases from the middle to both sides.

[0028] In another aspect, the utility model provides a semiconductor laser, comprising the heat dissipation device described in any one of the above embodiments.

[0029] The beneficial effects of the utility model are as follows: the heat dissipation device provided by the utility model comprises a heat sink and a cooling plate, the semiconductor laser comprises a laser chip, the laser chip is mounted on the heat sink, the heat sink is mounted on the cooling plate, a heat dissipation channel is arranged in the cooling plate, the heat dissipation channel is arranged corresponding to the laser chip, and in the longitudinal section of the heat dissipation channel, the cross-sectional area in the middle of the heat dissipation channel is larger than the cross-sectional area at both ends, so that more refrigerant flows in the middle of the heat dissipation channel, the cooling medium flow rate is larger, the heat dissipation capacity of the middle in the vertical direction is better, and the heat dissipation capacity of the middle is better than the heat dissipation capacity at both ends, so that the uneven heat distribution caused by the heat generated in the middle of the laser chip being greater than the heat generated at both ends can be balanced, the consistency of the horizontal temperature of the laser chip can be achieved, the slow axis far-field divergence angle can be reduced, and the brightness can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] In order to more clearly illustrate the specific implementation methods of the utility model or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0031] Figure 1 A cross-sectional schematic diagram of a heat dissipation device provided by an embodiment of the utility model;

[0032] Figure 2 A cross-sectional schematic diagram of a heat dissipation device provided by another embodiment of the utility model;

[0033] Figure 3 A cross-sectional schematic diagram of a heat dissipation device provided by yet another embodiment of the utility model;

[0034] Figure 4 A cross-sectional schematic diagram of a heat dissipation device provided in yet another embodiment of the utility model;

[0035] Figure 5 A cross-sectional schematic diagram of a heat dissipation device provided in yet another embodiment of the utility model;

[0036] Figure 6 The present invention is a cross-sectional schematic diagram of a heat dissipation device provided in yet another embodiment of the present invention.

[0037] Icons: 1-heat dissipation device; 11-cooling plate; 111-heat dissipation channel; 12-heat sink; 121-heat transfer channel; 122-first welding layer; 123-second welding layer; 13-laser chip; 131-ridge waveguide. DETAILED DESCRIPTION

[0038] In order to more clearly understand the above-mentioned purposes, features and advantages of the utility model, the utility model is further described in detail below in conjunction with the accompanying drawings and specific embodiments. In the absence of conflict, the embodiments of the present application and the features in the embodiments can be combined with each other. Obviously, the described embodiments are part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the utility model.

[0039] like Figures 1 to 5As shown, an embodiment of the utility model provides a heat dissipation device 1, which is used for a semiconductor laser, and the heat dissipation device 1 includes a heat sink 12 and a cooling plate 11; wherein the semiconductor laser includes a laser chip 13; the laser chip 13 is arranged on the heat sink 12, and the heat sink 12 is arranged on the cooling plate 11, and a heat dissipation channel 111 is arranged in the cooling plate 11, and the heat dissipation channel 111 is correspondingly arranged on the lower side of the laser chip 13, and in the longitudinal section of the heat dissipation channel 111, the cross-sectional area of ​​the middle part of the heat dissipation channel 111 is larger than the cross-sectional area of ​​the heat dissipation channel 111 on both sides.

[0040] The heat dissipation device 1 provided in this embodiment includes a heat sink 12 and a cooling plate 11. The semiconductor laser includes a laser chip 13. The laser chip 13 is mounted on the heat sink 12. The heat sink 12 is mounted on the cooling plate 11. A heat dissipation channel 111 is provided in the cooling plate 11. The heat dissipation channel 111 is arranged corresponding to the laser chip 13, and the middle cross-sectional area of ​​the heat dissipation channel 111 is larger than the cross-sectional area at both ends. When the semiconductor laser is working, the laser chip 13 is powered on to emit light and generate heat, wherein the heat generated at the ridge waveguide 131 in the middle of the laser chip 13 is greater than the heat generated at the two sides. The heat dissipation device 1 provided in this embodiment has a cross-sectional area in the middle of the heat dissipation channel 111 arranged in the cooling plate 11 that is higher than the cross-sectional area on the two sides, and the ridge waveguide 131 corresponds to the middle of the heat dissipation channel 111. Therefore, more refrigerant flows in the middle of the heat dissipation channel 111, and the cooling medium flow rate is greater. The heat dissipation capacity of the middle part in the vertical direction is better, and the heat dissipation capacity of the middle part is better than that of the two ends. The corresponding area of ​​the ridge waveguide 131 with larger heat generation can be cooled, so that the uneven heat generation in the middle and at both ends of the laser chip 13 can be balanced, the consistency of the horizontal temperature of the laser chip 13 can be achieved, the slow axis far-field divergence angle can be reduced, and the luminous brightness can be improved.

[0041] According to one embodiment of the utility model, Figures 1 to 5 As shown, the laser chip 13 includes a ridge waveguide 131, and the horizontal projection of the ridge waveguide 131 falls on the middle of the horizontal projection of the heat dissipation channel 111; and the cross-sectional area of ​​the middle part of the heat dissipation channel 111 is larger, so the flow rate of the cooling medium flowing inside it is larger, the flow rate is larger, and the heat dissipation capacity is stronger, which can dissipate the ridge waveguide 131 area with higher heat generation of the laser chip 13, thereby achieving temperature consistency in the middle and both sides of the laser chip 13, so as to improve the working efficiency of the semiconductor laser.

[0042] According to one embodiment of the utility model, Figures 1 to 5As shown, the laser chip 13 includes a body, and one side surface of the body includes a first area corresponding to the position of the ridge waveguide 131 and second areas located on both sides of the first area; the first area is provided with an outwardly protruding ridge strip structure to form the ridge waveguide 131, a first welding layer 122 is provided between the ridge waveguide 131 and the heat sink 12, and a second welding layer is provided between the second area and the heat sink 12, and the thickness of the first welding layer 122 is less than the thickness of the second welding layer 123. In this embodiment, the second area includes an upper waveguide layer and an electrical contact layer provided on the upper waveguide layer, and the second welding layer 123 is provided between the electrical contact layer and the heat sink 12.

[0043] In this embodiment, the first welding layer 122 and the second welding layer 123 are formed by melting the solder and then solidifying. The first welding layer 122 and the second welding layer 123 weld the laser chip 13 and the heat sink 12 together; the thermal conductivity of the solder is lower than the thermal conductivity of the heat sink 12 and the cooling plate 11. The middle solder on the heat sink 12 can be designed to be thinner and the solder on both sides can be thicker. In this way, after the solder is heated and melted, the thickness of the first welding layer 122 is less than the thickness of the second welding layer 123, and the thickness of the first welding layer 122 corresponding to the position of the ridge waveguide 131 is thinner. The heat transfer efficiency of the ridge waveguide 131 through the first welding layer 122 is higher, which can further improve the heat transfer efficiency of the middle part of the laser chip 13 to achieve the consistency of the horizontal temperature of the laser chip 13. In this embodiment, the thickness of the first welding layer 122 is 0.2-0.5 μm, preferably, the thickness of the first welding layer 122 is 0.5 μm; the thickness of the second welding layer 123 is 0.8-1.2 μm, preferably, the thickness of the second welding layer 123 is 1 μm.

[0044] According to one embodiment of the utility model, Figures 1 to 5 As shown, in the longitudinal section of the heat dissipation channel 111, the cross-sectional area of ​​the heat dissipation channel 111 gradually decreases from the middle to both sides; in this embodiment, the cross-sectional area of ​​the heat dissipation channel 111 is gradually reduced, and the refrigerant flows more smoothly in the heat dissipation channel 111.

[0045] like Figure 1 and Figure 2 As shown, the heat dissipation channel 111 in this embodiment is in an "inverted arch shape", and the maximum width of the heat dissipation channel 111 is close to (equal to, slightly larger than, or slightly smaller than) the width of the laser chip 13, and the ridge waveguide 131 is arranged in the middle of the laser chip 13, and the ridge waveguide 131 corresponds to the arch position of the heat dissipation channel 111; the flow velocity in the middle of the heat dissipation channel 111 is the highest, and is distributed parabolically along the radius, and the flow velocity at both ends is the lowest and may be stationary, thereby achieving fast heat dissipation in the middle of the laser chip 13 and slow heat dissipation at both ends, so as to achieve the purpose of uniform horizontal temperature of the chip.

[0046] Optional, such as Figure 1 As shown, the maximum height of the heat dissipation channel 111 is L1, the maximum width of the heat dissipation channel 111 is L2, the height of the cooling plate 11 is L3, the width of the ridge waveguide 131 is L4, and the width of the laser chip 13 is L5; then 30%<L1:L2<200%, preferably, 80%<L1:L2 is less than 150%; at this time, the heat dissipation effect of the entire heat dissipation device 1 is the best, and the horizontal temperature consistency of the laser chip 13 is better. In the present application, 10%<L1:L3<80%, preferably, 40%<L1:L3<60%, at this time the height of the cooling plate 11 is slightly larger than the maximum cross-sectional height of the heat dissipation channel 111 (that is, the height corresponding to the dome position), which can ensure both the structural stability of the cooling plate 11 and the heat dissipation performance of the heat dissipation device 1.

[0047] In this embodiment, L4<L2<4*L4, and L2≥L5, preferably, L4<L2<2*L4; In this embodiment, the width of the heat dissipation channel 111 is greater than the width of the ridge waveguide 131, and less than twice the width of the ridge waveguide 131, which ensures that the projection of the ridge waveguide 131 can fall within the heat dissipation channel 111, so as to better dissipate the heat at the position where the laser chip 13 generates the most heat, and ensure the stability of the overall structure. In this embodiment, the maximum width of the heat dissipation channel 111 is greater than the width of the laser chip 13, such as Figure 1 and Figure 2 As shown, the horizontal projection of the laser chip 13 can all fall into the heat dissipation channel 111, and the heat dissipation channel 111 can be used to dissipate heat from various areas of the laser chip 13 in the horizontal direction, resulting in a better heat dissipation effect. Of course, in this embodiment, the maximum width of the heat dissipation channel 111 can also be slightly larger or slightly smaller than the width of the laser chip 13. As long as the horizontal projection of the ridge waveguide 131 can be completely within the heat dissipation channel 111, the design concept of the utility model can be realized and should fall within the protection scope of the utility model.

[0048] like Figure 3As shown, the cross-sectional shape of the heat dissipation channel 111 in this embodiment can be arched, and the arch of the heat dissipation channel 111 is arranged close to one side of the laser chip 13. That is, the arch of the heat dissipation channel 111 faces the laser chip 13, and the projection of the laser chip 13 in the horizontal direction falls into the heat dissipation channel 111 as a whole. In this embodiment, the ridge waveguide 131 is arranged in the middle of the laser chip 13, and the ridge waveguide 131 corresponds to the arch position of the heat dissipation channel 111; according to Newton's friction law, that is, the viscosity law, the flow velocity of the fluid is positively correlated with the distance from the pipe wall, so the flow velocity at the center of the heat dissipation channel 111 is the largest, and the flow velocity at both ends is the lowest; in this embodiment, the flow velocity in the middle of the heat dissipation channel 111 is the highest, and is distributed in a parabolic shape along the radius, and the flow velocity at both ends is the lowest, the heat dissipation in the middle of the laser chip 13 is fast, and the heat dissipation at both ends is slow, so that the horizontal temperature of the chip can be consistent.

[0049] like Figure 3 As shown, the maximum height of the heat dissipation channel 111 is Z1, the maximum width of the heat dissipation channel 111 is Z2, the height of the cooling plate 11 is Z3, the width of the ridge waveguide 131 is Z4, and the width of the laser chip 13 is Z5; then 10%<Z1:Z2<100%, preferably, 10%<Z1:Z2<50%. In this embodiment, the small water-passing height Z1 is reduced (Z1:Z2 is reduced), which is beneficial to forming a heat dissipation difference between the center and the two sides, and, under the condition of the same water flow rate, the flow rate in the middle can be increased, and the heat extraction speed can be increased.

[0050] Among them, 5%<Z1:Z3<60%, preferably 10%<Z1:Z3<40%, the height of the cooling plate 11 is greater than the maximum height of the heat dissipation channel 111, which can ensure the structural stability of the cooling plate 11. Z4<Z2<6*Z4, and Z2≥Z5, preferably, Z4<Z2<3*Z4. Figure 3 As shown, this embodiment increases the maximum width of the heat dissipation channel 111 , increases the lateral heat dissipation capacity, ensures that the overall heat dissipation capacity is not affected, and thus maintains the heat dissipation efficiency of the laser chip 13 .

[0051] like Figure 4As shown, in one embodiment of the utility model, the cross-sectional shape of the heat dissipation channel 111 is an inverted isosceles trapezoid, and the top side width of the heat dissipation channel 111 is greater than the bottom side width, that is, the cross-sectional shape of the heat dissipation channel 111 is an "inverted isosceles trapezoid", and the bottom of the heat dissipation channel 111 is connected to the heat sink 12, and the horizontal projection of the ridge waveguide 131 falls into the heat dissipation channel 111. At the same time, the maximum width (top side width) of the heat dissipation channel 111 is equal to the width of the laser chip 13, and the horizontal projection of the laser chip 13 falls into the heat dissipation channel 111 as a whole, so that each area of ​​the laser chip 13 in the horizontal direction can directly dissipate heat through the heat dissipation channel 111, thereby improving the heat dissipation capacity of the heat dissipation device 1 for the laser chip 13. Of course, as Figure 5 As shown, the cross-sectional shape of the heat dissipation channel 111 may also be an isosceles trapezoid.

[0052] It should be noted that in the above-mentioned embodiment of the utility model, the cross-sectional shape of the heat dissipation channel 111 may also be other shapes, such as a triangle, a trapezoid or other irregular shapes. As long as the shape of "wide in the middle and narrow at both ends" can be achieved, the purpose of the utility model to increase the flow velocity and flow in the middle and thus improve the heat dissipation capacity of the middle part of the laser chip 13 can be achieved.

[0053] According to one embodiment of the utility model, Figure 2 As shown, the heat sink 12 is provided with a heat transfer channel 121, and the heat transfer channel 121 corresponds to the position of the ridge waveguide 131. Since the heat transfer channel 121 is added at the position corresponding to the ridge waveguide 131 on the heat sink 12, the heat dissipation area is increased, and the heat dissipation efficiency is further improved.

[0054] In the above embodiment of the present application, a first heat dissipation medium flows in the heat dissipation channel 111, and a second heat dissipation medium flows in the heat transfer channel 121. The heat dissipation coefficient of the first heat dissipation medium is K1, and the heat dissipation coefficient of the second heat dissipation medium is K2. The heat of the heat dissipation channel 111 can be dissipated outward through the cooling plate 11. When the heat dissipation channel 111 and the heat transfer channel 121 are independent of each other, K2>K1. At this time, the heat generated by the laser chip 13 is heat-exchanged with the second heat dissipation medium of the heat transfer channel 121, and the second heat dissipation medium absorbs heat and heats up. At the same time, the heat in the second heat dissipation medium is transferred to the first heat dissipation medium in the heat dissipation channel 111 by heat exchange. Since K2>K1, the heat of the heat transfer channel 121 is more easily transferred to the heat dissipation channel 111. Of course, in this embodiment, the heat dissipation channel 111 can also be connected to the heat transfer channel 121. At this time, the first heat dissipation medium and the second heat dissipation medium are the same, and K2=K1.

[0055] like Figure 2As shown, the shape of the heat transfer channel 121 is also narrow at both ends and wide in the middle, that is, the middle cross-sectional area of ​​the heat transfer channel 121 is larger than the cross-sectional area at both ends, thereby further improving the heat dissipation efficiency of the ridge waveguide 131 position; preferably, in this embodiment, the heat transfer channel 121 is arched, and the position is opposite to the arch top of the heat dissipation channel 111; of course, in this embodiment, the heat transfer channel 121 can also be a triangle, trapezoid, rectangle or other irregular shapes.

[0056] In this embodiment, the second heat dissipation medium in the heat transfer channel 121 can be water, and of course can also be other fluids with higher heat dissipation coefficients, such as Freon, pentafluoropropane, etc. The heat dissipation coefficient of the first heat dissipation medium in the heat transfer channel 111 needs to be smaller than the heat dissipation coefficient of the second heat dissipation medium in the heat transfer channel 121, so the first heat dissipation medium can be a fluid such as ethanol and glycerin. The material of the cooling plate 11 can be metal, such as gold, silver, copper, stainless steel, aluminum, iron, etc., or other heat conductive materials, such as diamond silicon carbide, etc.

[0057] It should be noted that in the above embodiment of the present application, one or more heat dissipation channels 111 can be provided, that is, one laser chip 13 corresponds to multiple heat dissipation channels 111, one heat dissipation channel 111 is directly opposite to the laser chip 13, and the other heat dissipation channels 111 are located on both sides. At this time, one heat dissipation channel 111 can directly absorb the heat of the laser chip 13 for heat dissipation, and at the same time, the heat absorbed can also be dissipated through other heat dissipation channels 111 on both sides, which can further improve the heat dissipation efficiency.

[0058] like Figure 6 As shown, another embodiment of the utility model provides a heat dissipation device, which is mainly different from the heat dissipation device provided in the above embodiment in that, in this embodiment, the heat dissipation channel 111 is arranged in the heat sink 12, and the cooling plate 11 is not arranged, or the cooling plate 11 is arranged, but the heat dissipation channel 111 is not arranged in the cooling plate 11, or the cross-sectional area of ​​the heat dissipation channel 111 in the cooling plate 11 is not larger in the middle and smaller at both ends.

[0059] The heat dissipation device provided in this embodiment includes a heat sink 12, and the semiconductor laser includes a laser chip 13; the laser chip 13 is arranged on the heat sink 12, and a heat dissipation channel 111 is arranged in the heat sink 12; in the longitudinal section of the heat dissipation channel 111, the cross-sectional area of ​​the middle part of the heat dissipation channel 111 is larger than the cross-sectional area of ​​the two sides of the heat dissipation channel 111. In the heat dissipation device 1 provided in this embodiment, since the cross-sectional area of ​​the middle part of the heat dissipation channel 111 arranged in the heat sink 12 is higher than the cross-sectional area of ​​the two sides, and the ridge waveguide 131 corresponds to the middle part of the heat dissipation channel 111, more refrigerant flows in the middle part of the heat dissipation channel 111, the cooling medium flow rate is greater, the heat dissipation capacity of the middle part in the vertical direction is better, and the heat dissipation capacity of the middle part is better than the heat dissipation capacity of the two ends, and the corresponding area of ​​the ridge waveguide 131 with a larger heat generation can be cooled, so that the uneven heat generation in the middle and the two ends of the laser chip 13 can be balanced, the consistency of the horizontal temperature of the laser chip 13 can be achieved, the slow axis far-field divergence angle can be reduced, and the luminous brightness can be improved.

[0060] The other structures, shapes, and dimensions of the heat dissipation channel 111 in this embodiment are the same as those in the above embodiment, and the connection method between the heat sink 12 and the laser chip 13 is also the same; therefore, the above structure is not repeated in this embodiment.

[0061] On the other hand, an embodiment of the utility model further provides a semiconductor laser, which adopts the heat dissipation device 1 described in any of the above embodiments. Since the heat dissipation device 1 provided in this embodiment has better temperature consistency, it can reduce the divergence angle and improve the light-emitting brightness, and the light-emitting performance of the semiconductor laser is better.

[0062] In the description of the present invention, it should be noted that the terms "upper" and "lower" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific position, be constructed and operated in a specific position, and therefore cannot be understood as limiting the present invention. In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance.

[0063] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installation", "connection" and "connection" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be an indirect connection through an intermediate medium, or it can be a connection between the insides of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances. In addition, in the description of the present invention, unless otherwise specified, "plurality" means two or more.

[0064] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A heat dissipation device for a semiconductor laser, characterized in that: It comprises a heat sink (12) and a cooling plate (11), and the semiconductor laser comprises a laser chip (13); The laser chip (13) is arranged on the heat sink (12), the heat sink (12) is arranged on the cooling plate (11), a heat dissipation channel (111) is arranged in the cooling plate (11), and the heat dissipation channel (111) is arranged correspondingly on the lower side of the laser chip (13); In the longitudinal section of the heat dissipation channel (111), the cross-sectional area of ​​the middle portion of the heat dissipation channel (111) is larger than the cross-sectional areas of both sides of the heat dissipation channel (111).

2. The heat dissipation device according to claim 1, characterized in that: The laser chip (13) comprises a ridge waveguide (131), wherein the ridge waveguide (131) ， The projection in the vertical direction falls on the middle of the heat dissipation channel (111).

3. The heat dissipation device according to claim 2, characterized in that: The laser chip (13) comprises a body, and a surface on one side of the body comprises a first area corresponding to the position of the ridge waveguide (131) and second areas located on both sides of the first area; The first region is provided with an outwardly protruding ridge structure to form the ridge waveguide (131); a first welding layer (122) is provided between the ridge waveguide (131) and the heat sink (12); a second welding layer is provided between the second region and the heat sink (12); and the thickness of the first welding layer (122) is less than the thickness of the second welding layer (123).

4. The heat dissipation device according to claim 2, characterized in that: In the longitudinal section of the heat dissipation channel (111), the cross-sectional area of ​​the heat dissipation channel (111) gradually decreases from the middle to both sides.

5. The heat dissipation device according to claim 4, characterized in that: The longitudinal cross-section of the heat dissipation channel (111) is in the shape of an inverted arch, and the arch top of the heat dissipation channel (111) is close to the bottom of the cooling plate (11).

6. The heat dissipation device according to claim 5, characterized in that: The maximum height of the heat dissipation channel (111) is L1, the maximum width of the heat dissipation channel (111) is L2, the height of the cooling plate (11) is L3, the width of the ridge waveguide (131) is L4, and the width of the laser chip (13) is L5; Then 30%<L1:L2<200%, 10%<L1:L3<80%, L4<L2<4*L4, and L2≥L5.

7. The heat dissipation device according to claim 4, characterized in that: The heat dissipation channel (111) is arched, and the arch top of the heat dissipation channel (111) is arranged close to the laser chip (13).

8. The heat dissipation device according to claim 7, characterized in that: The maximum height of the heat dissipation channel (111) is Z1, the maximum width of the heat dissipation channel (111) is Z2, the height of the cooling plate (11) is Z3, the width of the ridge waveguide (131) is Z4, and the width of the laser chip (13) is Z5; Then 10%<Z1:Z2<100%, 5%<Z1:Z3<60%, Z4<Z2<6*Z4, and Z2≥Z5.

9. The heat dissipation device according to any one of claims 1 to 8, characterized in that: A heat transfer channel (121) is provided in the heat sink (12), and the heat transfer channel (121) is correspondingly provided on the lower side of the laser chip (13); the heat transfer channel (121) is connected to the heat dissipation channel (111), or the heat transfer channel (121) and the heat dissipation channel (111) are independent of each other.

10. The heat dissipation device according to claim 9, characterized in that: The height of the heat sink (12) is d1, the height of the heat transfer channel (121) is d2, and 0.1*d1<d2<0.6*d1.

11. A heat dissipation device for a semiconductor laser, characterized in that: It comprises a heat sink (12), and the semiconductor laser comprises a laser chip (13); The laser chip (13) is arranged on the heat sink (12), and a heat dissipation channel (111) is arranged in the heat sink (12); In the longitudinal section of the heat dissipation channel (111), the cross-sectional area of ​​the middle portion of the heat dissipation channel (111) is larger than the cross-sectional areas of both sides of the heat dissipation channel (111).

12. The heat dissipation device according to claim 11, characterized in that: The laser chip (13) comprises a ridge waveguide (131), wherein the ridge waveguide (131) ， The projection in the vertical direction falls on the middle of the heat dissipation channel (111).

13. The heat dissipation device according to claim 12, characterized in that: The laser chip (13) comprises a body, and a surface on one side of the body comprises a first area corresponding to the position of the ridge waveguide (131) and second areas located on both sides of the first area; The first region is provided with an outwardly protruding ridge structure to form the ridge waveguide (131); a first welding layer (122) is provided between the ridge waveguide (131) and the heat sink (12); a second welding layer is provided between the second region and the heat sink (12); and the thickness of the first welding layer (122) is less than the thickness of the second welding layer (123).

14. The heat dissipation device according to claim 12, characterized in that: In the longitudinal section of the heat dissipation channel (111), the cross-sectional area of ​​the heat dissipation channel (111) gradually decreases from the middle to both sides.

15. A semiconductor laser, characterized in that: Comprising the heat dissipation device according to any one of claims 1 to 14.

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