Infrared detector for semiconductor wafer thickness detection

Abstract

The utility model relates to the technical field of infrared detectors, and discloses an infrared detector for detecting the thickness of a semiconductor wafer, which comprises a bottom plate, a placement disc is arranged at the top of the bottom plate, a plurality of semiconductor wafer placement grooves are formed in one side of the top of the placement disc, and taking grooves are formed in the inner walls of the semiconductor wafer placement grooves. A supporting frame is fixed to one side of the top of the bottom plate, an infrared thickness gauge is installed at the bottom of the supporting frame, a limiting assembly is arranged on one side of the containing disc, a clamping assembly is arranged on one side of the limiting assembly, and the shifting plate is rotated so that the shifting plate on the side where a wafer is newly placed can rotate to the first indicating plate from the second indicating plate. The infrared thickness gauge detects the thickness of the next wafer at the moment, the wafer of which the thickness is detected is taken out from one side of the first indicating plate, and then a new wafer is put in, so that the thickness of the wafer can be continuously detected by one worker, and the worker can continuously replace and detect the wafer; and frequent shutdown and waiting are not needed.

Description

Technical Field

[0001] The utility model relates to the technical field of infrared detectors, in particular to an infrared detector for detecting the thickness of semiconductor wafers. Background Art

[0002] A wafer refers to a silicon chip used to make silicon semiconductor circuits, and its raw material is silicon.

[0003] In a Chinese patent with the authorization publication number CN219223647U, an infrared detector for detecting the thickness of semiconductor wafers is disclosed, comprising a base plate, a support plate fixedly connected to the surface of the base plate, a servo motor fixedly connected to the surface of the support plate, the detection device is fixed by bolts through the mounting plate and the mounting holes, a plurality of wafers are placed in a plurality of limit rings on the base plate, an infrared thickness gauge is started to realize non-contact thickness measurement of the wafers by utilizing the absorption, reflection, scattering and other effects of infrared light penetrating a substance, the servo motor is started to drive the infrared thickness gauge to move horizontally through a threaded rod, a threaded sleeve, a limit plate and a linear motor, and the linear motor is started to drive the infrared thickness gauge to move longitudinally, so that the thickness of a plurality of wafers can be movably detected, thereby achieving the goal of facilitating the simultaneous detection of the thickness of a plurality of semiconductor wafers, avoiding the problem of low detection efficiency caused by the difficulty of most detection equipment in simultaneously detecting the thickness of a plurality of semiconductor wafers, and being very convenient to use.

[0004] The above patent has the following defects: when detecting the thickness of wafers, the above patent requires workers to place the wafers uniformly inside the taking slot, and then take out the detected wafers from the inside of the taking slot. During this process, workers cannot continuously detect the wafers and need to stop and wait, resulting in high labor costs. Therefore, an infrared detector for detecting the thickness of semiconductor wafers is proposed. Utility Model Content

[0005] The purpose of the utility model is to provide an infrared detector for detecting the thickness of a semiconductor wafer, so as to solve the problems raised in the above-mentioned background technology.

[0006] To achieve the above-mentioned purpose, the utility model provides the following technical solutions: an infrared detector for detecting the thickness of a semiconductor wafer, comprising a bottom plate, a placing plate is arranged on the top of the bottom plate, a plurality of semiconductor wafer placing grooves are opened on one side of the top of the placing plate, a taking groove is arranged on the inner wall of the semiconductor wafer placing groove, a supporting frame is fixed on one side of the top of the bottom plate, an infrared thickness gauge is installed on the bottom of the supporting frame, a limiting component is arranged on one side of the placing plate, and a clamping component is arranged on one side of the limiting component;

[0007] The clamping assembly comprises a plurality of rubber plates, a slide bar is fixed on one side of the rubber plate, and a slide plate is fixed on one side of the slide bar.

[0008] Preferably, a plurality of third slide grooves are provided inside the placement tray, and a second slide groove is provided inside the third slide grooves.

[0009] Preferably, the outer side of the rubber plate is slidably connected to the inner side of the semiconductor wafer placement groove, the outer side of the slide bar is slidably connected to the inner side of the second slide groove, and the outer side of the slide plate is slidably connected to the inner side of the third slide groove.

[0010] Preferably, a second tension spring is sleeved on the outer side of the slide rod, and two ends of the second tension spring are respectively connected to one side of the slide plate and the third slide groove.

[0011] Preferably, the outer side of the rubber plate is slidably connected to the inner side of the semiconductor wafer placement groove, and a through hole is opened on one side of the slide plate.

[0012] Preferably, the above-mentioned limiting assembly includes a rotating shaft and a second limiting plate, a pawl is hinged on one side of the second limiting plate, and a ratchet is fixedly sleeved on the outer side of the rotating shaft.

[0013] Preferably, a limiting groove is provided inside the bottom plate, a first limiting plate located on one side of a second limiting plate is fixed to an inner wall of the limiting groove, and one side of the second limiting plate is fixed to the inner wall of the limiting groove.

[0014] Preferably, a first tension spring is connected between one side of the first limiting plate and the pawl, the top of the rotating shaft is fixed to the bottom of the placement plate, and the outer side of the rotating shaft is rotatably connected to one side of the bottom plate through a bearing.

[0015] Preferably, a first sliding groove is provided on the inner side of the above-mentioned limiting groove, and a pull rod slidably connected to the inner side of the first sliding groove is hinged on one side of the pawl, and a handle is fixed on one end of the pull rod.

[0016] Preferably, a first indicator plate and a second indicator plate are fixed to the top of the bottom plate, respectively, and a plurality of toggle plates are fixed to the outside of the placement plate.

[0017] Compared with the prior art, the utility model adopts the above technical solution and has the following technical effects:

[0018] 1. By pushing the rubber plate to one side, the second tension spring is stretched, and the wafer is placed inside the semiconductor wafer placement slot. The tension of the rubber plate is released. Under the tension of the second tension spring, the rubber plate tightly clamps the wafer inside the semiconductor wafer placement slot. When it is necessary to detect the thickness of wafers of different sizes, it is only necessary to extend the rubber plate to different lengths of the third slide slot. At this time, wafers of different sizes can be clamped and fixed, thereby improving the versatility of the equipment.

[0019] Second, by rotating the toggle plate, the toggle plate on the side of the newly placed wafer is rotated from the second indicator plate to the first indicator plate. At this time, the infrared thickness gauge detects the thickness of the next wafer, takes out the wafer whose thickness has been detected on the side of the first indicator plate, and puts in a new wafer. At this time, one worker can continuously detect the thickness of the wafer. The staff can continuously replace and detect the wafer without frequent shutdown and waiting. The wafer thickness can be continuously detected by one worker, thus reducing the labor cost. Only one worker is needed to operate the whole process, reducing the investment of human resources. During the detection process, the wafer on one side is being detected, and the new wafer has been installed in the slot on the other side, which can achieve rapid replacement and continuous production, reducing the stagnation time of the production line. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0021] Figure 1 This is a schematic diagram of the structure of the utility model from a first perspective;

[0022] Figure 2 This is a schematic diagram of the structure of the utility model from a second viewing angle;

[0023] Figure 3 This is a schematic diagram of the structure of the utility model from a third viewing angle;

[0024] Figure 4 This is a schematic diagram of the cross-sectional structure of the rubber plate of the utility model;

[0025] Figure 5 It is a schematic diagram of the cross-sectional structure of the rotating shaft of the utility model.

[0026] Explanation of the reference numerals: 1. bottom plate; 2. limit assembly; 21. handle; 22. pull rod; 23. rotating shaft; 24. ratchet; 25. first limit plate; 26. first tension spring; 27. pawl; 28. second limit plate; 29. ​​first slide groove; 210. limit groove; 3. placement plate; 5. clamping assembly; 51. rubber plate; 52. slide rod; 53. second slide groove; 54. through hole; 55. slide plate; 56. third slide groove; 57. second tension spring; 6. support frame; 7. infrared thickness gauge; 8. semiconductor wafer placement slot; 9. picking slot; 10. toggle plate; 11. first indicator plate; 12. second indicator plate. DETAILED DESCRIPTION

[0027] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0028] It should be noted that when an element is referred to as being "fixed on" or "set on" another element, it can be directly on the other element or indirectly set on the other element; when an element is referred to as being "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element.

[0029] It should be understood that the terms "length", "width", "up", "down", "front", "back", "first", "second", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0030] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of this application, "multiple" and "several" mean two or more, unless otherwise clearly and specifically defined.

[0031] It should be noted that the structures, proportions, sizes, etc. illustrated in the drawings of this specification are only used to match the contents disclosed in the specification for people familiar with this technology to understand and read, and are not used to limit the conditions under which this application can be implemented. Therefore, they have no substantive technical significance. Any structural modification, change in proportional relationship or adjustment of size should still fall within the scope of the technical content disclosed in this application without affecting the effects and purposes that can be achieved by this application.

[0032] Example

[0033] See also Figure 1-5The utility model provides a technical solution: an infrared detector for detecting the thickness of a semiconductor wafer, comprising a bottom plate 1, a placing plate 3 is arranged on the top of the bottom plate 1, a plurality of semiconductor wafer placing grooves 8 are opened on one side of the top of the placing plate 3, a first indicator plate 11 and a second indicator plate 12 are respectively fixed on the top of the bottom plate 1, and a plurality of toggle plates 10 are fixed on the outer side of the placing plate 3. When the wafer after detection rotates to the side of the first indicator plate 11, the staff takes out the wafer in the semiconductor wafer placing groove 8 through the taking groove 9, and then puts the wafer whose thickness needs to be detected on the inner side of the semiconductor wafer placing groove 8, and continues to rotate the toggle plate 10 so that the toggle plate 10 rotates from the second indicator plate 12 to the first indicator plate 11. At this time, the infrared thickness gauge 7 also detects the thickness of the next wafer. A display screen for an infrared thickness gauge 7 is provided on one side of the bottom plate 1, which can display the thickness of the wafer. The staff judges whether the wafer is qualified according to the value on the display screen, and takes out the wafer whose thickness has been tested on the side of the first indicator plate 11, and puts in a new wafer. At this time, one worker can continuously test the thickness of the wafer. A taking groove 9 is provided on the inner wall of the semiconductor wafer placement groove 8. The finger is inserted into the inner side of the taking groove 9 to take out the wafer inside the semiconductor wafer placement groove 8. A support frame 6 is fixed on one side of the top of the bottom plate 1, and an infrared thickness gauge 7 is installed at the bottom of the support frame 6. The infrared thickness gauge 7 adopts a non-contact measurement method and will not cause damage or deformation to the material being tested. A limit assembly 2 is provided on one side of the placement plate 3, and a clamping assembly 5 is provided on one side of the limit assembly 2;

[0034] In order to facilitate the clamping and thickness detection of wafers of different sizes, a clamping assembly 5 is provided. The clamping assembly 5 includes a plurality of rubber plates 51. A slide bar 52 is fixed to one side of the rubber plate 51. A slide plate 55 is fixed to one side of the slide bar 52. A plurality of third slide grooves 56 are provided inside the placement plate 3. A second slide groove 53 is provided inside the third slide groove 56. The rubber plate 51 is pushed to one side, and then the second tension spring 57 is stretched. At this time, the wafer is placed on the inner side of the semiconductor wafer placement groove 8. Then, the tension of the second tension spring 57 is released. At this time, under the tension of the second tension spring 57, the rubber plate 51 tightly clamps the wafer on the inner side of the semiconductor wafer placement groove 8. The outer side of the rubber plate 51 is slidably connected to the inner side of the semiconductor wafer placement groove 8, the outer side of the slide bar 52 is slidably connected to the inner side of the second slide groove 53, and the outer side of the slide plate 55 is slidably connected to the inner side of the third slide groove 56.

[0035] A second tension spring 57 is sleeved on the outer side of the slide rod 52, and the two ends of the second tension spring 57 are respectively connected to the slide plate 55 and one side of the third slide groove 56. The second tension spring 57 provides a pulling force for the rubber plate 51 to clamp the wafer. The outer side of the rubber plate 51 is slidably connected to the inner side of the semiconductor wafer placement groove 8. A through hole 54 is opened on one side of the slide plate 55, and the through hole 54 is used to balance the air pressure on both sides of the slide plate 55.

[0036] In order to facilitate continuous detection of wafers, a limit assembly 2 is provided, which includes a rotating shaft 23 and a second limit plate 28. A pawl 27 is hinged on one side of the second limit plate 28. A ratchet 24 is fixedly sleeved on the outer side of the rotating shaft 23. A limit groove 210 is provided inside the bottom plate 1. Under the tension of the first tension spring 26, the pawl 27 slides over the inner side of the teeth of the ratchet 24, so that the placement plate 3 can only rotate counterclockwise to prevent the placement plate 3 from rotating at will. A first limit plate 25 located on one side of the second limit plate 28 is fixed on the inner wall of the limit groove 210. One side of the second limit plate 28 is fixed to the inner wall of the limit groove 210. A first tension spring 26 is connected between one side of the limiting plate 25 and the pawl 27, the top of the rotating shaft 23 is fixed to the bottom of the placing plate 3, and the outer side of the rotating shaft 23 is rotatably connected to one side of the bottom plate 1 through a bearing. When the placing plate 3 needs to be rotated at will, at this time, it is only necessary to pull the handle 21 to one side, so that the handle 21 drives the pull rod 22 and the pawl 27 to move to one side, and finally the pawl 27 leaves the inner side of the ratchet 24. At this time, the placing plate 3 can be rotated at will, and a first sliding groove 29 is provided on the inner side of the limiting groove 210, and a pull rod 22 slidably connected to the inner side of the first sliding groove 29 is hinged on one side of the pawl 27, and a handle 21 is fixed to one end of the pull rod 22.

[0037] Working principle: When the wafer thickness needs to be detected, the rubber plate 51 is pushed to one side, and then the second tension spring 57 is stretched. At this time, the wafer is placed inside the semiconductor wafer placement groove 8, and then the tension of pushing the rubber plate 51 is released. At this time, under the tension of the second tension spring 57, the rubber plate 51 tightly clamps the wafer inside the semiconductor wafer placement groove 8. When the thickness of wafers of different sizes needs to be detected, it is only necessary to extend the rubber plate 51 to different lengths of the third slide groove 56. At this time, wafers of different sizes can be clamped and fixed, thereby improving the versatility of the equipment.

[0038] All the semiconductor wafer placement slots 8 on one side of the placement plate 3 are loaded with wafers whose thickness needs to be tested. The staff member moves the toggle plate 10 on the side of the first indicator plate 11 with his finger, so that the toggle plate 10 drives the placement plate 3 to rotate, and the toggle plate 10 rotates from the second indicator plate 12 to the side of the first indicator plate 11, so that the wafers located inside the semiconductor wafer placement slots 8 are continuously sent to the lower side of the infrared thickness gauge 7. At this time, the infrared thickness gauge 7 uses the reflection and transmission characteristics of infrared rays to measure the thickness of the material. When the infrared rays are irradiated to the surface of the material, part of the light will be reflected back, and the other part of the light will penetrate the material and be reflected back by the internal reflective surface. By measuring the intensity and time difference of the reflected light and the transmitted light, the thickness of the material can be calculated.

[0039] When the wafer after detection rotates to the side of the first indicator plate 11, the staff takes out the wafer after detection in the semiconductor wafer placement slot 8 through the taking slot 9, and then puts the wafer whose thickness needs to be detected on the inner side of the semiconductor wafer placement slot 8, and continues to rotate the toggle plate 10, so that the toggle plate 10 rotates from the second indicator plate 12 to the first indicator plate 11. At this time, the infrared thickness gauge 7 also detects the thickness of the next wafer, and then takes out the wafer whose thickness has been detected on the side of the first indicator plate 11, and then puts in a new wafer. At this time, the thickness of the wafer can be detected uninterruptedly by one worker, and the staff can continuously replace and detect the wafer without frequent shutdown and waiting. The thickness of the wafer can be detected uninterruptedly by one worker, so the labor cost can be reduced. Only one worker is needed to operate the whole process, which reduces the investment of human resources. During the detection process, the wafer on one side is being detected, and the new wafer has been installed in the slot on the other side, which can achieve rapid replacement and continuous production, reducing the stagnation time of the production line.

[0040] When the placement disk 3 is rotated counterclockwise, under the tension of the first tension spring 26, the pawl 27 slides over the inner side of the teeth of the ratchet wheel 24, so that the placement disk 3 can only rotate counterclockwise, thereby preventing the placement disk 3 from rotating at will. The staff cannot distinguish between the detected and undetected ones. When the placement disk 3 needs to be rotated at will, it is only necessary to pull the handle 21 to one side, so that the handle 21 drives the pull rod 22 and the pawl 27 to move to one side, and finally the pawl 27 leaves the inner side of the ratchet wheel 24, and the placement disk 3 can be rotated at will.

[0041] So far, the embodiments of the utility model have been described in detail in conjunction with the accompanying drawings. It should be noted that the implementation methods not shown or described in the drawings or the body of the specification are all forms known to ordinary technicians in the relevant technical field and are not described in detail. In addition, the above definitions of each component are not limited to the various specific structures, shapes or methods mentioned in the embodiments, and ordinary technicians in the field can simply change or replace them.

[0042] Those skilled in the art will appreciate that the features described in the various embodiments and / or claims of the present invention may be combined and / or combined in various ways, even if such combinations and / or combinations are not explicitly described in the present invention. In particular, the features described in the various embodiments and / or claims of the present invention may be combined and / or combined in various ways without departing from the spirit and teachings of the present invention. All of these combinations and / or combinations fall within the scope of the present invention.

[0043] The specific embodiments described above further illustrate the purpose, technical solutions and beneficial effects of the present invention. It should be understood that the above description is only a specific embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. An infrared detector for detecting the thickness of a semiconductor wafer, comprising a base plate (1), characterized in that: A placement tray (3) is arranged on the top of the base plate (1), a plurality of semiconductor wafer placement slots (8) are provided on one side of the top of the placement tray (3), and a pick-up slot (9) is provided on the inner wall of the semiconductor wafer placement slot (8); a support frame (6) is fixed on one side of the top of the base plate (1), an infrared thickness gauge (7) is installed at the bottom of the support frame (6), a limit assembly (2) is arranged on one side of the placement tray (3), and a clamping assembly (5) is arranged on one side of the limit assembly (2); The clamping assembly (5) comprises a plurality of rubber plates (51), a slide bar (52) being fixed to one side of the rubber plate (51), and a slide plate (55) being fixed to one side of the slide bar (52).

2. The infrared detector for detecting the thickness of a semiconductor wafer according to claim 1, characterized in that: A plurality of third sliding grooves (56) are provided inside the placement plate (3), and a second sliding groove (53) is provided inside the third sliding groove (56).

3. The infrared detector for detecting the thickness of a semiconductor wafer according to claim 2, characterized in that: The outer side of the rubber plate (51) is slidably connected to the inner side of the semiconductor wafer placement groove (8), the outer side of the sliding rod (52) is slidably connected to the inner side of the second sliding groove (53), and the outer side of the sliding plate (55) is slidably connected to the inner side of the third sliding groove (56).

4. The infrared detector for detecting semiconductor wafer thickness according to claim 3, characterized in that: A second tension spring (57) is sleeved on the outer side of the slide bar (52), and two ends of the second tension spring (57) are respectively connected to one side of the slide plate (55) and the third slide groove (56).

5. The infrared detector for detecting semiconductor wafer thickness according to claim 4, characterized in that: The outer side of the rubber plate (51) is slidably connected to the inner side of the semiconductor wafer placement groove (8), and a through hole (54) is provided on one side of the slide plate (55).

6. The infrared detector for detecting semiconductor wafer thickness according to claim 1, characterized in that: The limiting assembly (2) comprises a rotating shaft (23) and a second limiting plate (28); a ratchet (27) is hingedly connected to one side of the second limiting plate (28); and a ratchet (24) is fixedly sleeved on the outer side of the rotating shaft (23).

7. The infrared detector for detecting the thickness of a semiconductor wafer according to claim 6, characterized in that: A limiting groove (210) is provided inside the bottom plate (1), a first limiting plate (25) located on one side of a second limiting plate (28) is fixed to the inner wall of the limiting groove (210), and one side of the second limiting plate (28) is fixed to the inner side wall of the limiting groove (210).

8. The infrared detector for detecting semiconductor wafer thickness according to claim 7, characterized in that: A first tension spring (26) is connected between one side of the first limiting plate (25) and the pawl (27); the top of the rotating shaft (23) is fixed to the bottom of the placement plate (3); and the outer side of the rotating shaft (23) is rotatably connected to one side of the bottom plate (1) via a bearing.

9. The infrared detector for detecting semiconductor wafer thickness according to claim 8, characterized in that: A first sliding groove (29) is provided inside the limiting groove (210), and a pull rod (22) is hingedly connected to one side of the ratchet (27) and is slidably connected to the inside of the first sliding groove (29), and a handle (21) is fixed to one end of the pull rod (22).

10. The infrared detector for detecting semiconductor wafer thickness according to claim 1, characterized in that: A first indicating plate (11) and a second indicating plate (12) are respectively fixed on the top of the bottom plate (1), and a plurality of shifting plates (10) are fixed on the outside of the placement plate (3).

Images