Magnetron sputtering device and magnetron sputtering equipment
The magnetron sputtering device addresses uneven magnetic field distribution by using a preset path with multiple starting and turning positions to balance etching speed, enhancing target material utilization and service life.
Patent Information
- Application Number
- CN202420083905.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-01-12
- Publication Date
- 2024-12-17
- Estimated Expiration
- 2034-01-12
AI Technical Summary
The existing magnetron sputtering technology suffers from uneven magnetic field distribution during reciprocating scanning, leading to uneven target material consumption and low utilization rate due to stagnation points, resulting in grooves and premature target material failure.
The magnetron sputtering device employs a magnetron with a preset path that alternates between multiple starting and turning positions, reducing the etching speed at stagnation points and minimizing speed differences, ensuring even target material consumption by setting multiple stagnation points at both ends of the path.
This design extends the service life of the target material by reducing uneven etching, delaying scrapping time, and improving the utilization rate through balanced etching across the target material.
Smart Images
Figure CN222182418U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of film coating, in particular to a magnetron sputtering device and a magnetron sputtering equipment. Background Art
[0002] Magnetron sputtering has the advantages of low substrate temperature, pure film quality, uniform and dense structure, good firmness and repeatability, and is widely used in industries such as semiconductors, solar energy and flat panel displays. The working principle of magnetron sputtering is that argon atoms form argon ions and electrons under the action of an electric field. The argon ions are accelerated by the electric field to fly to the cathode target and bombard the target surface with high energy, causing the target material to sputter. The sputtered neutral target atoms or molecules are deposited on the substrate to form a thin film.
[0003] In the related art, a magnetron reciprocates on the back of a target material for scanning, so that a magnetic field orthogonal to the electric field is formed between the target material and the substrate to be coated. However, during the reciprocating scanning process of the magnetron, stagnation occurs due to the need for commutation. When the magnet stagnates, the central magnetic field of the target material is weak and the edge magnetic field is strong, resulting in an uneven distribution of the magnetic field relative to the target surface of the entire target material. In this case, as the coating time increases, a groove will be formed at the position of the target material corresponding to the stagnation of the magnetron, and as the coating time increases, the groove will gradually deepen until the target material is broken down, causing the entire target material to be unusable, but at this time the middle position of the target material is not completely consumed, so the utilization rate of the target material is low. Utility Model Content
[0004] The utility model aims to solve at least one of the technical problems existing in the prior art. To this end, the utility model provides a magnetron sputtering device, which can reduce the etching speed of the target material at a single stagnation point and improve the utilization rate of the target material.
[0005] The utility model also provides a magnetron sputtering device having the magnetron sputtering device.
[0006] According to the first aspect of the present invention, the magnetron sputtering device comprises:
[0007] A carrier, the carrier being used for carrying a target material;
[0008] A magnetron, located on one side of the target material along its thickness direction, and used to form a magnetic field;
[0009] a driving member connected to any one of the bearing member and the magnetron to drive the magnetron to reciprocate along a preset path relative to the bearing member;
[0010] The preset path is set to have a first end and a second end, N starting positions are set at the first end, and N turning positions are set at the second end, N is a positive integer greater than or equal to 2, and the movement of the magnetron from the first end to the second end is set as a first stroke, and the movement from the second end to the first end is set as a second stroke. The magnetron is configured to: alternately perform the first stroke and the second stroke, and the starting positions and the turning positions of adjacent first strokes are different, and the starting positions and the turning positions of adjacent second strokes are different.
[0011] The magnetron sputtering device according to the embodiment of the utility model has at least the following beneficial effects:
[0012] The magnetron sputtering device of the present application sets a plurality of stagnation points at both ends of a preset path, thereby reducing the etching speed of the target material at a single stagnation point and narrowing the etching speed difference between the stagnation point and the non-stagnation point, so that the etching speed of the entire target material tends to be close, thereby delaying the scrapping time of the target material, increasing the service life of the target material, and improving the utilization rate of the target material.
[0013] According to some embodiments of the present invention, along the moving direction of the magnetron, the distance between any of the starting positions and any of the turning positions is not less than the width of the substrate.
[0014] According to some embodiments of the present invention, the spacing between adjacent starting positions is greater than or equal to 5 mm, and the spacing between adjacent turning positions is greater than or equal to 5 mm.
[0015] According to some embodiments of the utility model, the first end is provided with two starting positions, the second end is provided with two turning positions, and each alternation of two first strokes and two second strokes is set as a movement cycle, and the movement paths of each movement cycle are the same.
[0016] According to some embodiments of the utility model, the two starting positions are respectively set as a first starting position and a second starting position; the two turning positions are respectively set as a first turning position and a second turning position; along the moving direction of the magnetron, the first starting position, the second starting position, the first turning position and the second turning position are sequentially arranged;
[0017] When the first first stroke is performed, the magnetron moves from the first starting position to the second turning position; when the first second stroke is performed, the magnetron moves from the second turning position to the second starting position; when the second first stroke is performed, the magnetron moves from the second starting position to the first turning position; when the second second stroke is performed, the magnetron moves from the first turning position to the first starting position.
[0018] According to some embodiments of the utility model, the two starting positions are respectively set as a first starting position and a second starting position; the two turning positions are respectively set as a first turning position and a second turning position; along the moving direction of the magnetron, the first starting position, the second starting position, the first turning position and the second turning position are sequentially arranged;
[0019] When the first first stroke is performed, the magnetron moves from the first starting position to the first turning position; when the first second stroke is performed, the magnetron moves from the first turning position to the second starting position; when the second first stroke is performed, the magnetron moves from the second starting position to the second turning position; when the second second stroke is performed, the magnetron moves from the second turning position to the first starting position.
[0020] According to some embodiments of the utility model, the two starting positions are respectively set as a first starting position and a second starting position; the two turning positions are respectively set as a first turning position and a second turning position; along the moving direction of the magnetron, the first starting position, the second starting position, the first turning position and the second turning position are sequentially arranged;
[0021] When the first first stroke is performed, the magnetron moves from the second starting position to the first turning position; when the first second stroke is performed, the magnetron moves from the first turning position to the first starting position; when the second first stroke is performed, the magnetron moves from the first starting position to the second turning position; when the second second stroke is performed, the magnetron moves from the second turning position to the second starting position.
[0022] According to some embodiments of the utility model, the two starting positions are respectively set as a first starting position and a second starting position; the two turning positions are respectively set as a first turning position and a second turning position; along the moving direction of the magnetron, the first starting position, the second starting position, the first turning position and the second turning position are sequentially arranged;
[0023] When the first first stroke is performed, the magnetron moves from the second starting position to the second turning position; when the first second stroke is performed, the magnetron moves from the second turning position to the first starting position; when the second first stroke is performed, the magnetron moves from the first starting position to the first turning position; when the second second stroke is performed, the magnetron moves from the first turning position to the second starting position.
[0024] According to some embodiments of the present invention, when the magnetron performs the first stroke, the end point of the previous second stroke is used as the starting point; when the magnetron performs the second stroke, the end point of the previous first stroke is used as the starting point.
[0025] The magnetron sputtering equipment according to the second aspect of the present invention comprises the magnetron sputtering device described in any one of the above embodiments.
[0026] Additional aspects and advantages of the present invention will be given in part in the following description, and in part will become apparent from the following description, or will be learned through the practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS
[0027] The present invention is further described below with reference to the accompanying drawings and embodiments, wherein:
[0028] Figure 1 It is a structural schematic diagram of a magnetron sputtering device according to an embodiment of the utility model;
[0029] Figure 2 It is a schematic diagram of an etching groove formed on a target material of an embodiment of the utility model;
[0030] Figure 3 A schematic diagram of a first implementation of a magnetron moving path according to an embodiment of the utility model;
[0031] Figure 4 A schematic diagram of a second implementation of a magnetron moving path according to an embodiment of the utility model;
[0032] Figure 5 A schematic diagram of a third implementation of a magnetron moving path according to an embodiment of the present utility model;
[0033] Figure 6 A schematic diagram of a fourth implementation of a magnetron moving path according to an embodiment of the present utility model;
[0034] Figure 7 This is a target material thickness data diagram for a comparative example of the utility model embodiment and an improved example of the present application.
[0035] Reference numerals:
[0036] Target 100 ; groove 110 ; magnetron 200 ; first starting position 210 ; second starting position 220 ; first turning position 230 ; second turning position 240 ; substrate 300 . DETAILED DESCRIPTION
[0037] The embodiments of the present invention are described in detail below, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and cannot be understood as limiting the present invention.
[0038] In the description of the present invention, it should be understood that descriptions involving orientation, such as up, down, front, back, left, right, etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.
[0039] In the description of the present utility model, "several" means more than one, "many" means more than two, "greater than", "less than", "exceed" etc. are understood to exclude the number itself, and "above", "below", "within" etc. are understood to include the number itself. If there is a description of "first" or "second", it is only used to distinguish the technical features, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features or implicitly indicating the order of the indicated technical features.
[0040] In the description of the present invention, unless otherwise clearly defined, terms such as setting, installing, connecting, etc. should be understood in a broad sense, and technicians in the relevant technical field can reasonably determine the specific meanings of the above terms in the present invention based on the specific content of the technical solution.
[0041] In the description of the utility model, the description with reference to the terms "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the utility model. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.
[0042] The embodiment of the first aspect of the present application provides a magnetron sputtering device, such as Figure 1As shown, the magnetron sputtering device includes a carrier, a magnetron 200 and a driving member. The carrier is used to carry the target material 100. The carrier can be a support frame that can set up the target material 100, and is in point contact or line contact with the target material 100, so that the target material 100 is suspended in the air through multiple abutments, and the magnetron 200 is arranged above or below the support frame for scanning; the carrier can also be a plate that can be in surface contact with the target material 100, and the plate can pass through the magnetic field emitted by the magnetron 200 to change the direction of electron movement through the magnetic field, bind and extend the movement path of electrons, increase the ionization probability of electrons and effectively utilize the energy of electrons.
[0043] The magnetron 200 is located on one side of the target material 100 along the thickness direction thereof to form a magnetic field, and the substrate 300 to be coated is located on the other side of the carrier along the thickness direction. Figure 1 As shown in the figure as an example, the magnetron 200 is located above the carrier (not shown in the figure), the substrate 300 to be coated is arranged below the magnetron 200, and the target material 100 is connected to the carrier and is located between the magnetron 200 and the substrate 300 to be coated.
[0044] The driving member may be connected to the supporting member, or connected to the magnetron 200, in order to drive the magnetron 200 to move relative to the supporting member. Figure 1 In the illustrated embodiment, the magnetron 200 is connected to a driving member, so that, driven by the driving member, the magnetron 200 can reciprocate along a preset path relative to the carrier, thereby forming a specific magnetic field between the target material 100 and the substrate 300 to be coated, so that the electrons move approximately in a cycloidal motion in the orthogonal electromagnetic field, thereby greatly increasing the probability of electron ionization.
[0045] Due to the limited size of the target material 100 on the carrier, there must be an end point when the magnetron 200 moves in a straight line in any direction. The magnetron 200 decelerates until the speed is 0 when approaching the end point, and gradually accelerates after changing direction, repeating this cycle, so that a strong magnetic field is easily formed at the beginning and end of the preset path of the magnetron 200. It should be noted that since the speed of the magnetron 200 at the beginning and end of the preset path is slow and the speed in the middle is fast, the magnetic field is uneven, and the consumption rate of the target material 100 is also inconsistent. As the use time increases, the positions on the target material 100 corresponding to the beginning and end of the preset path of the magnetron 200 are consumed at a faster rate, and the grooves 110 are etched to form (refer to Figure 2 As shown in FIG. 1 , once the target material 100 is etched through, the target material 100 cannot be used. At this time, the middle portion of the target material 100 is not completely consumed, so the utilization rate of the target material 100 is low.
[0046] Based on the above, the present application has made improvements to the moving path of the magnetron 200. For the convenience of description, the two ends of the preset path are named as the first end and the second end respectively. It should be understood that when the magnetron 200 moves from the first end to the second end, the first end is the starting end, the second end is the ending end, the magnetron 200 is accelerated at the first end, and the magnetron 200 is decelerated at the second end; when the magnetron 200 turns from the second end and moves toward the first end, the second end is the starting end, the first end is the ending end, the magnetron 200 is accelerated at the second end, and the magnetron 200 is decelerated at the first end.
[0047] Among them, N starting positions are set at the first end, and N turning positions are set at the second end, N is a positive integer greater than or equal to 2, and it is set that the movement of the magnetron 200 from the first end to the second end is the first stroke, and the movement of the second end to the first end is the second stroke. The magnetron 200 is configured to: alternately perform the first stroke and the second stroke, that is, after completing the first stroke, perform the second stroke and return to the first end, and then start the first stroke and the second stroke again to cycle, thereby realizing the reciprocating motion of the magnetron 200.
[0048] It should be noted that the starting positions and the turning positions of adjacent first strokes are different, and the starting positions and the turning positions of adjacent second strokes are different. Taking the magnetron 200 sequentially performing the first first stroke, the first second stroke, the second first stroke, the second second stroke, etc. as an example, the starting position and the turning position of the second first stroke are different from the starting positions and the turning positions of the first first stroke and the third first stroke, and the starting position and the turning position of the second second stroke are different from the starting positions and the turning positions of the first second stroke and the third second stroke.
[0049] For ease of understanding, taking the example of two turning positions and two starting positions being provided on the preset path, for the convenience of subsequent description, the two turning positions are respectively named as the first turning position 230 and the second turning position 240, and the two starting positions are respectively named as the first starting position 210 and the second starting position 220. It can be understood that along the positive direction of the movement direction of the magnetron 200, the first starting position 210, the second starting position 220, the first turning position 230 and the second turning position 240 are sequentially provided, and the movement path of the magnetron 200 can be any one of the following schemes:
[0050] Option 1: If Figure 3As shown, when the first first stroke is performed (refer to A1 in the upper figure), the magnetron 200 moves from the first starting position 210 to the second turning position 240. When the first second stroke is performed (refer to B1 in the upper figure), the magnetron 200 takes the end point of the first first stroke as the starting point and turns the moving direction back to the first end, that is, the magnetron 200 moves from the second turning position 240 to the second starting position 220. When the second first stroke is performed (refer to A2 in the lower figure), the second first stroke takes the end point of the first second stroke as the starting point and turns the moving direction back to the second end, that is, the magnetron 200 moves from the second starting position 220 to the first turning position 230. When the second second stroke is performed (refer to B2 in the lower figure), the magnetron 200 moves from the first turning position 230 to the first starting position 210.
[0051] Option 2: If Figure 4 As shown, when the first first stroke is performed (refer to A1 in the upper figure), the magnetron 200 moves from the first starting position 210 to the first turning position 230. When the first second stroke is performed (refer to B1 in the upper figure), the magnetron 200 takes the end point of the first first stroke as the starting point and turns the moving direction back to the first end, that is, the magnetron 200 moves from the first turning position 230 to the second starting position 220. When the second first stroke is performed (refer to A2 in the lower figure), the second first stroke takes the end point of the first second stroke as the starting point and turns the moving direction back to the second end, that is, the magnetron 200 moves from the second starting position 220 to the second turning position 240. When the second second stroke is performed (refer to B2 in the lower figure), the magnetron 200 moves from the second turning position 240 to the first starting position 210.
[0052] Option 3: If Figure 5 As shown, when the first first stroke is performed (refer to A1 in the upper figure), the magnetron 200 moves from the second starting position 220 to the first turning position 230. When the first second stroke is performed (refer to B1 in the upper figure), the magnetron 200 takes the end point of the first first stroke as the starting point and turns the moving direction back to the first end, that is, the magnetron 200 moves from the first turning position 230 to the first starting position 210. When the second first stroke is performed (refer to A2 in the lower figure), the second first stroke takes the end point of the first second stroke as the starting point and turns the moving direction back to the second end, that is, the magnetron 200 moves from the first starting position 210 to the second turning position 240. When the second second stroke is performed (refer to B2 in the lower figure), the magnetron 200 moves from the second turning position 240 to the second starting position 220.
[0053] Option 4: If Figure 6As shown, when the first first stroke is performed (refer to A1 in the upper figure), the magnetron 200 moves from the second starting position 220 to the second turning position 240. When the first second stroke is performed (refer to B1 in the upper figure), the magnetron 200 takes the end point of the first first stroke as the starting point and turns the moving direction back to the first end, that is, the magnetron 200 moves from the second turning position 240 to the first starting position 210. When the second first stroke is performed (refer to A2 in the lower figure), the second first stroke takes the end point of the first second stroke as the starting point and turns the moving direction back to the second end, that is, the magnetron 200 moves from the first starting position 210 to the first turning position 230. When the second second stroke is performed (refer to B2 in the lower figure), the magnetron 200 moves from the first turning position 230 to the second starting position 220.
[0054] It can be understood that in the prior art, the magnetron 200 has only one starting position and one turning position on the preset path, so that the preset path of the magnetron 200 is a line from the starting position to the turning position, and the magnetron 200 has two stagnation points, namely the starting position and the turning position, and the etching groove 110 is formed at the position of the target material 100 corresponding to the stagnation points (i.e., the starting position and the turning position).
[0055] In the present application, based on the above four embodiments, it can be found that the starting position and the turning position of the first stroke are inconsistent with the previous first stroke and the next first stroke, and the second stroke is the same, so that the magnetron 200 has four stagnation points (that is, two starting positions and turning positions) during the two reciprocating motions. Figure 2 As shown, the device sets a plurality of stagnation points at both ends of a preset path, and finally forms a plurality of etching grooves 110 at both ends of the target material, thereby reducing the etching speed of the target material 100 at a single stagnation point, and reducing the difference in etching speed between the stagnation point and the non-stagnation point, so that the etching speed of the entire target material 100 tends to be close, thereby delaying the scrapping time of the target material 100, increasing the service life of the target material 100, and improving the utilization rate of the target material 100.
[0056] It should be noted that, in the above embodiment, N is described as 2 for example, but it should not be understood that the magnetron 200 of the present application can only be provided with two starting positions and turning positions. N can also be 3 or 4. It can be understood that the more the number of starting positions and turning positions on the preset path, the slower the etching speed of the target material 100 at a single stagnation point, and the longer the service life of the target material 100.
[0057] Furthermore, along the moving direction of the magnetron 200, the distance between any starting position and any turning position is not less than the width of the substrate 300 to be coated, thereby ensuring that the substrate 300 can be covered no matter which starting position the magnetron 200 moves from to the turning position, thereby avoiding uneven coating. It should be understood that since the starting positions are all located at the first end and the turning positions are all located at the second end, the distance between the starting position closest to the second end at the first end and the turning position closest to the first end at the second end is the minimum distance between any starting position and any turning position, as shown in FIG. Figures 3 to 6 Taking the illustrated embodiment as an example, when the distance between the second starting position 220 and the first switching position 230 is not less than the width of the substrate 300 , the distances between the remaining starting positions and the remaining switching positions are all greater than the width of the substrate 300 .
[0058] In some embodiments, the spacing between adjacent starting positions is greater than or equal to 5 mm, and the spacing between adjacent turning positions is greater than or equal to 5 mm. If the spacing between adjacent starting positions is less than 5 mm, the etching grooves 110 on the target 100 will overlap, and the etching speed of the etching grooves 110 in the overlapping part is faster than that in other areas, and penetration is more likely to occur. To avoid overlapping of the etching grooves 110, the spacing between adjacent starting positions and adjacent turning positions is not less than 5 mm.
[0059] In some embodiments, the first end is provided with two starting positions, the second end is provided with two turning positions, and each alternating two first strokes and two second strokes is set as one movement cycle. It can be understood that the end point of the second second stroke of the magnetron 200 is the same as the starting point of the first first stroke, so that when the magnetron 200 completes a movement cycle, the movement path of the next cycle is the same as that of the previous movement cycle, that is, the movement path of each movement cycle is the same.
[0060] In some embodiments, when the magnetron 200 performs a first stroke, the end point of the previous second stroke is used as the starting point; when the magnetron 200 performs a second stroke, the end point of the previous first stroke is used as the starting point, thereby forming a cycle to facilitate the magnetron 200 to reciprocate.
[0061] In order to prove that the magnetron sputtering device of the present application can improve the service life of the target material 100, the present application also conducts the following verification:
[0062] like Figure 7As shown, taking a Cu target material 100 of 1130mm×1200mm×10mm as an example, when sputtering to 5000kw·h, in the comparative embodiment of the prior art having only a single starting position and a single turning position (refer to the upper figure), the thickness of the Cu target material 100 in the etching groove 110 is only 1mm. The improved embodiment adopts the above-mentioned two starting positions and two turning positions of the present application (refer to the lower figure), and the etching grooves 110 at the first end and the second end are changed from 1 to 2, and the thickness of the Cu target material 100 in the etching groove 110 is 3mm. This greatly improves the service life of the target material 100, and the improvement ratio is greater than 20%.
[0063] The second aspect of the present application also proposes a magnetron sputtering device, which includes the magnetron sputtering device mentioned in any of the above embodiments. The magnetron sputtering device can be used for sheet coating processing in the fields of semiconductors, display panels, solar cells, etc.
[0064] The embodiments of the utility model are described in detail above in conjunction with the accompanying drawings, but the utility model is not limited to the above embodiments. Various changes can be made within the knowledge of ordinary technicians in the relevant technical field without departing from the purpose of the utility model. In addition, the embodiments of the utility model and the features in the embodiments can be combined with each other without conflict.
Claims
1. Magnetron sputtering device, used to coat the substrate, It is characterized in that include: A carrier, the carrier being used for carrying a target material; A magnetron, located on one side of the target material along its thickness direction, and used to form a magnetic field; a driving member connected to any one of the bearing member and the magnetron to drive the magnetron to reciprocate along a preset path relative to the bearing member; The preset path is set to have a first end and a second end, N starting positions are set at the first end, and N turning positions are set at the second end, N is a positive integer greater than or equal to 2, and the movement of the magnetron from the first end to the second end is set as a first stroke, and the movement from the second end to the first end is set as a second stroke. The magnetron is configured to: alternately perform the first stroke and the second stroke, and the starting positions and the turning positions of adjacent first strokes are different, and the starting positions and the turning positions of adjacent second strokes are different.
2. The magnetron sputtering device according to claim 1, It is characterized in that Along the moving direction of the magnetron, the distance between any of the starting positions and any of the turning positions is not less than the width of the substrate.
3. The magnetron sputtering device according to claim 1, It is characterized in that The spacing between adjacent starting positions is greater than or equal to 5 mm, and the spacing between adjacent turning positions is greater than or equal to 5 mm.
4. The magnetron sputtering device according to claim 1, It is characterized in that The first end is provided with two starting positions, the second end is provided with two turning positions, and each alternation of two first strokes and two second strokes is set as a movement cycle, and the movement paths of each movement cycle are the same.
5. The magnetron sputtering device according to claim 4, It is characterized in that The two starting positions are respectively set as a first starting position and a second starting position; the two turning positions are respectively set as a first turning position and a second turning position; along the moving direction of the magnetron, the first starting position, the second starting position, the first turning position and the second turning position are sequentially set; When the first first stroke is performed, the magnetron moves from the first starting position to the second turning position; when the first second stroke is performed, the magnetron moves from the second turning position to the second starting position; when the second first stroke is performed, the magnetron moves from the second starting position to the first turning position; when the second second stroke is performed, the magnetron moves from the first turning position to the first starting position.
6. The magnetron sputtering device according to claim 4, It is characterized in that The two starting positions are respectively set as a first starting position and a second starting position; the two turning positions are respectively set as a first turning position and a second turning position; along the moving direction of the magnetron, the first starting position, the second starting position, the first turning position and the second turning position are sequentially set; When the first first stroke is performed, the magnetron moves from the first starting position to the first turning position; when the first second stroke is performed, the magnetron moves from the first turning position to the second starting position; when the second first stroke is performed, the magnetron moves from the second starting position to the second turning position; when the second second stroke is performed, the magnetron moves from the second turning position to the first starting position.
7. The magnetron sputtering device according to claim 4, It is characterized in that The two starting positions are respectively set as a first starting position and a second starting position; the two turning positions are respectively set as a first turning position and a second turning position; along the moving direction of the magnetron, the first starting position, the second starting position, the first turning position and the second turning position are sequentially set; When the first first stroke is performed, the magnetron moves from the second starting position to the first turning position; when the first second stroke is performed, the magnetron moves from the first turning position to the first starting position; when the second first stroke is performed, the magnetron moves from the first starting position to the second turning position; when the second second stroke is performed, the magnetron moves from the second turning position to the second starting position.
8. The magnetron sputtering device according to claim 4, It is characterized in that The two starting positions are respectively set as a first starting position and a second starting position; the two turning positions are respectively set as a first turning position and a second turning position; along the moving direction of the magnetron, the first starting position, the second starting position, the first turning position and the second turning position are sequentially set; When the first first stroke is performed, the magnetron moves from the second starting position to the second turning position; when the first second stroke is performed, the magnetron moves from the second turning position to the first starting position; when the second first stroke is performed, the magnetron moves from the first starting position to the first turning position; when the second second stroke is performed, the magnetron moves from the first turning position to the second starting position.
9. The magnetron sputtering device according to claim 1, It is characterized in that When the magnetron performs the first stroke, the end point of the previous second stroke is used as the starting point; when the magnetron performs the second stroke, the end point of the previous first stroke is used as the starting point.
10. Magnetron sputtering equipment, It is characterized in that It comprises the magnetron sputtering device as described in any one of claims 1 to 9.