Horizontal rotating wafer electroplating equipment and wafer electroplating device

Abstract

The utility model provides horizontal rotating wafer electroplating equipment and a wafer electroplating device. The horizontal rotating wafer electroplating equipment comprises a wafer containing tank body, a cover body, a wafer and a wafer bearing back plate, the crystal containing groove body and the cover body are movably and hermetically connected; the crystal containing groove body comprises a first groove bottom, a groove wall and a first cavity defined by the first groove bottom and the groove wall; a through first opening is formed in the first groove bottom; the wafer and the wafer bearing back plate are sequentially stacked in the first cavity, and the to-be-plated surface of the wafer corresponds to the first opening; the wafer bearing back plate is an electric conductor and is electrically communicated with the to-be-plated surface of the wafer; the cover body comprises a first locking surface facing one side of the crystal bearing back plate, the outer surface of the first locking surface is provided with a first conductive part, the first conductive part comprises a first end and a second end, the second end is electrically connected with an external electrode, and the first end is in contact with and electrically communicated with the crystal bearing back plate; according to the electroplating equipment and the electroplating device, the integration degree and the electric connection reliability are improved.

Description

[Technical field]

[0001] The present application relates to the technical field of wafer electroplating equipment, and in particular to a horizontally rotating wafer electroplating equipment and a wafer electroplating device. [Background technology]

[0002] In the existing semiconductor wafer electroplating equipment, the main design is that the anode is fixed and placed flat at the bottom, while the cathode can be rotated and designed to be parallel to the anode. The advantages of horizontal electroplating equipment are: the cathode fixture can be rotated or moved up and down, the electroplating fixture automation mechanism is easy to design, and the rotation is used to destroy the electric double layer effect on the surface of the cathode object, so that metal ions can easily enter the cathode. The wafer is usually a structure with a conductive surface to be plated and a non-conductive back surface. The wafer back plate connected to the back is also an insulating material, so it is necessary to set up a separate conductive structure to be electrically connected to the surface to be plated. In the existing design, the conductive structure usually needs to be pulled out separately and connected to the external electrode, that is, it is necessary to open a conductive connection channel on the wafer hanger body, so the manufacturing process is complicated and the cost is high. And for the suspended disc electrode, the separate opening of the conductive connection channel may also cause the external plating solution to enter the corroded conductive structure due to the problem of insufficient sealing, causing defects such as failure of the electrical connection of the conductive structure. [Contents of the utility model]

[0003] In view of this, the embodiment of the present application provides a horizontally rotating wafer electroplating device. It uses a conductive wafer-carrying back plate to be electrically connected to the wafer surface to be plated, and does not require a separate conductive structure connection channel, which not only improves the reliability of electrical connection during the electroplating process, but also saves the difficulty of workpiece production and reduces costs.

[0004] A horizontally rotating wafer electroplating device comprises: a wafer storage tank, a cover, a wafer, and a wafer holding back plate; the wafer storage tank and the cover are movably sealed and connected;

[0005] The crystal storage tank body comprises a first tank bottom, a tank wall and a first cavity formed by the first tank bottom and the tank wall; the first tank bottom is provided with a through first opening; the wafer and the crystal storage back plate are stacked and placed in the first cavity in sequence, and the surface of the wafer to be plated is arranged corresponding to the first opening;

[0006] The crystal-carrying back plate is made of conductive material and is electrically connected to the surface of the wafer to be plated; the cover body includes a first locking surface facing the side of the crystal-carrying back plate, and the outer surface of the first locking surface is provided with a first conductive part, the first conductive part includes a first end and a second end, the second end is electrically connected to the external electrode, and the first end is in contact with the crystal-carrying back plate and can be electrically connected.

[0007] Furthermore, it includes a conductive ring located on a side of the wafer close to the first opening; the conductive ring is used to electrically connect the surface to be plated of the wafer with the wafer-bearing back plate.

[0008] Furthermore, the inner ring side of the conductive circular ring at least partially overlaps and contacts the surface to be plated of the wafer, and the outer ring side of the conductive circular ring at least partially overlaps and contacts the wafer-carrying back plate.

[0009] Furthermore, the cover body includes a locking portion and a hanging portion which are integrally connected, and the outer peripheral wall of the locking portion and the inner peripheral wall of the crystal container body are respectively provided with matching locking structures; and the first conductive portion is provided in the locking portion.

[0010] Furthermore, at least one first elastic seal is provided on the outer peripheral wall of the locking portion, and at least one first sealing groove is provided on the inner side wall of the crystal container body; when the cover body is locked with the crystal container body, the first elastic seal is aligned and engaged with the first sealing groove.

[0011] Furthermore, one end of the suspension portion away from the locking portion may be movably connected to the driving device, and the driving device may drive the suspension portion to rotate circumferentially in the horizontal direction.

[0012] Furthermore, a second sealing groove is provided on the inner side of the bottom of the first groove, the second sealing groove is arranged around the first opening, and the second sealing groove can be used to accommodate a second elastic sealing member.

[0013] Furthermore, a mounting groove is provided on the inner side of the bottom of the first groove, and the side diameter length and shape of the mounting groove are matched with the length and shape of the side wall of the crystal-bearing back plate.

[0014] Furthermore, a limiting groove is provided on a side of the wafer-bearing back plate facing the wafer, and the side diameter length and shape of the limiting groove are matched with the side diameter length and shape of the wafer.

[0015] Furthermore, it also includes a dust cover, which is sleeved and fixed on the peripheral wall of the hanging part.

[0016] In a second aspect, the present application also provides an electroplating device, comprising a horizontally rotating wafer electroplating device, an electrolyte tank and an anode member according to any one of the above-mentioned first aspects, wherein the anode member is horizontally placed in the electrolyte tank, and the horizontally rotating wafer electroplating device is suspended above the anode member.

[0017] The horizontally rotating wafer electroplating equipment and electroplating device provided by the present application adopts a conductive material to prepare a wafer-bearing back plate, so that the wafer-bearing back plate can be used as a supporting and fixing component of the wafer, and can further be used as a conductive structure to be electrically connected to the surface to be plated of the wafer, thereby connecting the surface to be plated of the wafer with the external electrode. This not only saves the process difficulty and manufacturing cost caused by separately opening a conductive structure connection channel inside the wafer hanger, but also avoids the conductive structure being corroded by the plating solution due to insufficient sealing of the separately opened conductive structure connection channel, thereby causing the electrical conductivity of the conductive structure to fail or become unstable, thereby improving the reliability of the electrical connection of the surface to be plated of the wafer during the electroplating process. At the same time, since the electrical connection channel between the surface to be plated of the wafer and the external electrode utilizes the assembly structure of the existing wafer hanger, the integration of the electroplating equipment is further improved.

Brief Description of the Drawings

[0018] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0019] Figure 1 A perspective schematic diagram of a horizontally rotating wafer electroplating device provided in the present application;

[0020] Figure 2 for Figure 1 The schematic cross-sectional view of the horizontal rotating wafer electroplating equipment shown in FIG.

[0021] Figure 3 for Figure 1 A bottom view schematic diagram of a horizontal rotating wafer electroplating apparatus is shown;

[0022] Figure 4 A schematic diagram of a partial disassembly of a wafer electroplating device provided in this application;

[0023] Figure 5 for Figure 1 A schematic diagram of a structure stacking process on the side of a crystal container body is shown;

[0024] Figure 6 A perspective schematic diagram of another horizontally rotating wafer electroplating device provided in the present application;

[0025] Figure 7 for Figure 6 The schematic cross-sectional view in the direction of BB' of the horizontally rotating wafer electroplating equipment shown;

[0026] Figure 8 for Figure 6 A bottom view schematic diagram of a horizontal rotating wafer electroplating apparatus is shown;

[0027] Fig. 9 A schematic diagram of a horizontally rotating wafer electroplating device provided in the present application. [Specific implementation method]

[0028] In order to better understand the technical solution of the present application, the embodiments of the present application are described in detail below with reference to the accompanying drawings.

[0029] It should be clear that the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of the present application.

[0030] The terms used in the embodiments of the present application are only for the purpose of describing specific embodiments, and are not intended to limit the present application. The singular forms "a", "an", "the" and "the" used in the embodiments of the present application and the appended claims are also intended to include plural forms, unless the context clearly indicates other meanings.

[0031] It should be understood that the term "and / or" used in this article is only a description of the association relationship of associated objects, indicating that there can be three relationships. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. In addition, the character " / " in this article generally indicates that the associated objects before and after are in an "or" relationship.

[0032] In the description of this specification, it is necessary to understand that the words such as "substantially", "approximately", "approximately", "about", "roughly", "substantially" and the like described in the claims and embodiments of the present application refer to what can be generally recognized within a reasonable process operation range or tolerance range, rather than an exact value.

[0033] An embodiment of the present application provides a horizontally rotating wafer electroplating device. By making the wafer back plate of the wafer support body using conductive materials, not only can the wafer surface to be plated be electrically connected with the external electrode in a cheap and safe manner, but also the difficulty of process manufacturing is reduced and costs are saved.

[0034] For example, Figure 1 A perspective schematic diagram of a horizontally rotating wafer electroplating device provided in the present application; Figure 2 for Figure 1 The schematic cross-sectional view of the horizontal rotating wafer electroplating equipment shown in FIG. Figure 3 for Figure 1 A bottom view schematic diagram of a horizontal rotating wafer electroplating apparatus is shown; Figure 4 A schematic diagram of a partial disassembly of a wafer electroplating device provided in this application; Figure 5 for Figure 1 A schematic diagram of the structure stacking process of a crystal container body side is shown; please refer to Figures 1 to 5As shown, the wafer hanger 001 includes a crystal receiving tank 1 and a cover body 2. The crystal receiving tank 1 includes an integrated tank bottom 112 and a tank wall 111, and the inner upper part of the tank wall 111 is provided with an internal thread (not shown); the cover body 2 includes a hanging portion 22 and a locking portion 21, and the outer peripheral shape of the locking portion 21 is matched with the outer peripheral shape and size of the chamber 113 of the crystal receiving tank 1. In the schematic drawings provided in the present application, the locking portion 21 and the inner chamber 113 of the crystal receiving tank 1 are both annular structures, more specifically circular; of course, in other variable embodiments, the locking portion 21 and the inner chamber 113 of the crystal receiving tank 1 can also be square, hexagonal, octagonal and other deformed structures, and the present application does not make specific restrictions on this structure. The locking part 21 and the hanging part 22 can be assembled by locking through structures such as snaps or threads. The locking part 21 includes a locking surface 202 and a locking wall 201, and a plurality of turns of external threads are arranged on the locking wall 201; the internal thread of the groove wall 111 and the external thread of the locking wall 201 can be matched and screwed together to assemble the cover body 2 and the crystal container 1 together.

[0035] Optionally, a first sealing groove 114 is provided on the inner wall of the crystal receiving groove 1 that is opened into the edge of the groove wall 111, and a first sealing member 214 is provided on the locking wall 201 on the locking portion 21 of the cover body 2 that is close to the hanging portion 22. When the cover body 2 and the crystal receiving groove 1 are assembled and locked, the first sealing member 214 and the first sealing groove 114 can match and lock to achieve sealed assembly. Specifically, the first sealing member 214 can be an elastic rubber ring or the like; the first sealing member 214 can be arranged around the locking wall 201 in a whole circle, or can be arranged in sections and evenly, and the corresponding first sealing groove 114 can also be arranged in a whole circle or in sections and evenly. Furthermore, the maximum radial width of the first sealing member 214 is slightly greater than or equal to the radial width of the first sealing groove 114, that is, the first sealing member 214 can completely fill the seam width of the first sealing groove 114.

[0036] The bottom 112 of the crystal receiving tank 1 is provided with an opening 101. When the wafer 4 is installed in the cavity of the crystal receiving tank 1, the surface 41 of the wafer 4 to be plated faces the opening 101, that is, the opening 101 can expose the surface 41 of the wafer 4 to be plated, so that the plating solution can contact the surface 41 of the wafer 4 to be plated through the opening 101 for reaction. The surface 41 of the wafer 4 to be plated is a conductive structure 6, and the back side 42 of the wafer 4 is an insulating material. Optionally, in some embodiments, the diameter width of the opening 101 gradually increases along the direction of the crystal receiving back plate 5 pointing to the opening 101. If the opening 101 is a wedge-shaped structure, it can limit the reaction area and improve the fluid flow pattern. The wedge-shaped structure is formed by the frame of the chamber 113.

[0037] Optionally, at least one circle of second sealing groove 102 is arranged around the opening 101 on the inner side of the groove bottom 112 of the crystal receiving groove 1, and a second sealing member 7 is arranged in the second sealing groove 102, and the first sealing member 214 can be matched and engaged with the first sealing groove 114; when not subjected to external pressure, the height of the second sealing member 7 is greater than the depth of the second sealing groove 102, that is, the top of the second sealing member 7 is higher than the top of the second sealing groove 102; further, the original width of the second sealing member 7 can be slightly greater than the width of the second sealing groove 102, so that the second sealing member 7 can be fixed in the second sealing groove 102. Specifically, the second sealing member 7 can be an elastic rubber ring, etc.; the second sealing member 7 can be arranged around the opening 101 in a whole circle, or can be arranged in sections and evenly, and the corresponding second sealing groove 102 can also be arranged in a whole circle or in sections and evenly.

[0038] Optionally, the second sealing groove 102 adopts a horseshoe-shaped design. After the second sealing member 7 is installed in the second sealing groove 102, it will not be separated from the second sealing groove 102 when the wafer 4 is installed and disassembled, thereby avoiding the problem of loose sealing during multiple uses.

[0039] Alternatively, if Figure 1 and Figure 2 As shown, a mounting groove 103 is provided inside the bottom 112 of the crystal receiving groove 1. The mounting groove 103 is used to bear and engage the crystal receiving back plate 5. Therefore, the inner peripheral shape of the mounting groove 103 matches the outer peripheral shape of the crystal receiving back plate 5. It can be a circular ring or an irregular polygon, which is not limited in this application. Figure 5 As shown, the inner circumference of the mounting groove 103 is an annular shape including two raised areas, and correspondingly, the outer circumference of the crystal-holding back plate 5 is an annular shape including two recessed areas. The recessed areas and the raised areas can be aligned and engaged to achieve a secure fixation of the crystal-holding back plate 5, thereby achieving fixation of the wafer 4.

[0040] The wafer-carrying back plate 5 is installed on the side of the wafer 4 away from the opening 101 and in direct contact with the back side 42 of the wafer 4; it is used to fix and support the wafer 4 to protect it from external force damage. In the present application, the wafer-carrying back plate 5 is a good electrical conductor, specifically, it is made of conductive material as a whole, and it can also be plated with metal conductive material on the outer surface as a whole. The first side 501 of the wafer-carrying back plate 5 can be electrically connected to the surface 41 to be plated of the wafer 4 through the first conductive structure 6, and the other side 502 of the wafer-carrying back plate 5 can be electrically connected to the external electrode 12.

[0041] For details, please refer to 2 and Figure 5The wafer-carrying back plate 5 includes a first supporting surface 501 and a second supporting surface 502 opposite to each other. The first supporting surface 501 is close to the side of the wafer 4. A limiting groove 51 is provided on the surface of the first supporting surface 501. The peripheral shape of the limiting groove 51 matches the peripheral shape of the wafer 4. The peripheral size of the limiting groove 51 is slightly larger than or equal to the peripheral size of the wafer 4. The depth of the limiting groove 51 may be slightly smaller than or equal to the thickness of the wafer 4. The surface 41 of the wafer 4 to be plated is directly electrically connected to the first supporting surface 501 of the wafer-carrying back plate 5 inside the chamber 113 through the first conductive structure 6 such as a conductive ring and a conductive sheet.

[0042] Optionally, a conductive ring 6 is provided on one side of the wafer 4 close to the groove bottom 112, and one end of the inner ring side of the conductive ring 6 is in direct contact with the surface 41 to be plated of the wafer 4, and one end of the outer ring side is in direct contact with the first supporting surface 501 of the wafer-carrying back plate 5, thereby realizing electrical connection between the surface 41 to be plated of the wafer 4 and the wafer-carrying back plate 5. Specifically, the inner diameter of the conductive ring 6 is smaller than the outer diameter of the wafer 4, and the outer diameter of the conductive ring 6 is larger than the outer diameter of the wafer 4, and is equal to or slightly smaller than the outer diameter of the wafer-carrying back plate 5; that is, the inner ring side of the conductive ring 6 overlaps and contacts with the surface 41 to be plated of the wafer 4, and the outer ring side overlaps and contacts with the first supporting surface 501 of the wafer-carrying back plate 5. Further optionally, the thickness of the conductive ring 6 is slightly less than or equal to the height of the second sealing member 7 protruding from the inner upper surface of the groove bottom 112.

[0043] like Figures 1 to 5 As shown, a conductive part 3 is provided inside the locking part 21 of the cover body 2, and the surface of the conductive part 3 protrudes from the locking surface 202 of the locking part 21. When the cover body 2 and the crystal receiving slot 1 accommodating the wafer 4 and the crystal receiving back plate 5 are locked, the outer surface (the first end 31) of the conductive part 3 is in direct contact with the second supporting surface 502 of the crystal receiving back plate 5; in this way, one end (the second end 32) of the potential locking part 21 in the conductive part 3 is connected to the electrode 12 of the external power supply, and the first end protruding from the locking surface 202 is electrically connected to the crystal receiving back plate 5; in this way, the surface 41 to be plated of the wafer 4 is connected to the external electrode 12 (not shown in the figure) through the first conductive structure 6, the crystal receiving back plate 5, the conductive part 3 and the external electrode 12 (not shown in the figure), thereby ensuring the smooth progress of the wafer electroplating process. For the specific principle of wafer electroplating, please refer to the prior art and will not be repeated here.

[0044] Alternatively, if Figure 2 As shown, the outer circumferential dimension of the first end 31 of the conductive part 3 is smaller than the outer circumferential dimension of the locking surface 202; the radial surface of the first end 31 of the conductive part 3 is circular; in other embodiments, the shape can also be square, rectangular, other polygons, etc., which is not limited in the embodiments of the present application.

[0045] Please continue reading Figure 1 and Figure 2The end of the hanging part 22 of the cover body 2 away from the locking part 21 is fixedly connected to the motor 10 through the coupling 9. The motor 10 drives the coupling 9 to drive the hanging part 22 to perform horizontal circumferential rotational movement, thereby driving the entire wafer hanger 001 to perform horizontal circumferential rotational movement. When the wafer 4 contacts the electroplating solution, the rotational movement of the wafer hanger 001 can evenly stir the electroplating solution, making the composition of the electroplating solution in contact with the wafer 4 more uniform, thereby improving the uniformity of the electroplating effect of the surface 41 to be plated of the wafer 4. In this application, the motor 10 and the coupling 9 can adopt any type of existing products that can meet the horizontal rotation drive function. The driving principle thereof refers to the description in the prior art and is not repeated in this application.

[0046] Optionally, a dust cover 11 is fixedly installed between the coupling 9 and the locking portion 21 of the cover body 2 and on the outer peripheral wall of the hanging portion 22; specifically, as Figure 6 to Figure 9 As shown, the outer diameter width of the dust cover 11 is greater than the outer diameter width of the locking portion 21 of the cover body 2. The dust cover 11 can prevent upper impurities or objects from falling into the electroplating tank and affecting the electroplating effect. Further, the outer diameter width of the dust cover 11 can be greater than the width of the opening 101 of the electroplating tank.

[0047] Optionally, see Figure 2 and Figure 7 As shown, inside the suspension part 22, a conductive connector 33 connected to the conductive part 3 is provided along the length direction. The conductive connector 33 can be electrically connected to the external conductive carbon rod 81 and connected to the external electroplating workstation 82 to achieve more precise control and monitoring and adjustment of the electroplating process.

[0048] The present application also provides a horizontally rotating wafer 4 electroplating device, such as Fig. 9 As shown, it includes any of the horizontally rotating wafer electroplating equipment 100, electrolyte tank 01, electrolyte 02 and anode member 03 described in the above embodiments, the anode member 03 is horizontally placed in the electrolyte tank 01, and the horizontally rotating wafer electroplating equipment 100 is vertically suspended directly above the anode member 03; the surface 41 to be plated of the wafer 4 is arranged opposite to the anode member 03. The electroplating principle of the electroplating device in this application can refer to the introduction in the prior art, and will not be repeated here. The structure and material selection of the anode member can also refer to the products in the prior art, and will not be repeated here.

[0049] The horizontally rotating wafer electroplating equipment and wafer electroplating device provided by the present application adopt conductive materials to prepare the wafer-bearing back plate, so that the wafer-bearing back plate can be used as a supporting and fixing component of the wafer, and can further be used as a conductive structure to be electrically connected to the surface to be plated of the wafer, thereby connecting the surface to be plated of the wafer with the external electrode. This not only saves the process difficulty and manufacturing cost caused by separately opening a conductive structure connection channel inside the wafer hanger, but also avoids the conductive structure being corroded by the plating solution due to insufficient sealing of the separately opened conductive structure connection channel, thereby causing the electrical conductivity of the conductive structure to fail or become unstable, thereby improving the reliability of the electrical connection of the surface to be plated of the wafer during the electroplating process. At the same time, since the electrical connection channel between the surface to be plated of the wafer and the external electrode utilizes the assembly structure of the existing wafer hanger, the integration of the electroplating equipment is further improved.

Claims

1. A horizontally rotating wafer electroplating device, characterized in that: include: A crystal trough body, a cover body, a wafer, and a crystal back plate; the crystal trough body and the cover body are movably and hermetically connected; The crystal receiving tank body comprises a first tank bottom, a tank wall and a first cavity formed by the first tank bottom and the tank wall; the first tank bottom is provided with a through first opening; the wafer and the crystal receiving back plate are sequentially stacked and placed in the first cavity, and the surface of the wafer to be plated is arranged corresponding to the first opening; The wafer-carrying back plate is an electrical conductor and is electrically connected to the surface of the wafer to be plated; the cover body includes a first locking surface facing the side of the wafer-carrying back plate, and the outer surface of the first locking surface is provided with a first conductive portion, and the first conductive portion includes a first end and a second end, the second end is electrically connected to the external electrode, and the first end is in contact with and electrically connected to the wafer-carrying back plate.

2. The horizontal rotating wafer electroplating equipment according to claim 1, characterized in that: It comprises a conductive ring, which is located on one side of the wafer close to the first opening; the conductive ring is used to electrically connect the surface to be plated of the wafer with the wafer-bearing back plate.

3. The horizontal rotating wafer electroplating equipment according to claim 2, characterized in that: The inner ring side of the conductive circular ring at least partially overlaps and contacts with the surface to be plated of the wafer, and the outer ring side of the conductive circular ring at least partially overlaps and contacts with the wafer-carrying back plate.

4. The horizontal rotating wafer electroplating equipment according to claim 1, characterized in that: The cover body comprises a locking portion and a hanging portion which are integrally connected, and the outer peripheral wall of the locking portion and the inner peripheral wall of the crystal container body are respectively provided with matching locking structures; the first conductive portion is arranged inside the locking portion.

5. The horizontal rotating wafer electroplating equipment according to claim 4, characterized in that: At least one first elastic seal is provided on the outer peripheral wall of the locking portion, and at least one first sealing groove is provided on the inner side wall of the crystal storage tank body; when the cover body is locked with the crystal storage tank body, the first elastic seal is aligned and engaged with the first sealing groove.

6. The horizontally rotating wafer electroplating equipment according to claim 4, characterized in that: One end of the hanging part away from the locking part is movably connected to a driving device, and the driving device drives the hanging part to rotate circumferentially in a horizontal direction.

7. The horizontal rotating wafer electroplating equipment according to claim 1, characterized in that: A second sealing groove is provided at the inner side of the bottom of the first groove. The second sealing groove is arranged around the first opening. The second sealing groove can be used to accommodate a second elastic sealing member.

8. The horizontal rotating wafer electroplating equipment according to claim 1, characterized in that: A mounting groove is provided on the inner side of the bottom of the first groove, and the side diameter length and shape of the mounting groove are matched with the side wall length and shape of the crystal-supporting backplate; and / or a limiting groove is provided on a side of the crystal-supporting backplate facing the wafer, and the side diameter length and shape of the limiting groove are matched with the side diameter length and shape of the wafer.

9. The horizontally rotating wafer electroplating equipment according to claim 4, characterized in that: It also includes a dust cover, which is sleeved and fixed on the peripheral wall of the hanging part.

10. A wafer electroplating device, comprising the horizontally rotating wafer electroplating equipment according to any one of claims 1 to 9, an electrolyte tank and an anode member, characterized in that: The anode component is horizontally placed in the electrolyte tank, and the horizontally rotating wafer electroplating equipment is suspended above the anode component.

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