Mask structure for checking exposure pattern sleeving
By designing the alignment ruler and alignment rule holes extending in the X and Y directions on the mask structure, the alignment accuracy deviation problem during exposure in semiconductor processes is solved, and the deviation is quickly identified and adjusted to avoid product waste , improves the accuracy and efficiency of exposure correction.
Patent Information
- Application Number
- CN202323623726.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2023-12-28
- Publication Date
- 2024-12-17
- Estimated Expiration
- 2033-12-28
AI Technical Summary
During the semiconductor process production process, there is a deviation in the alignment accuracy during exposure, which leads to the inaccuracy of product patterns being deviated and resulting in scrapping. The prior art has failed to effectively solve the exposure correction problem.
Design a mask structure for checking exposure pattern sleeve, including first and second alignment scales extending in X and Y directions, respectively, rectangular or circular alignment scale holes arranged linearly through the alignment scale With overlapping effect, the operator can easily identify the deviation direction and degree and adjust the exposure operation in a timely manner.
Through the overlapping effect of the alignment ruler, the operator can quickly identify the deviation direction and degree, avoid product scrapping, and improve the accuracy and efficiency of exposure correction.
Smart Images
Figure CN222189693U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to a mask structure, more specifically, to a mask structure for checking the overlap of exposure patterns. Background Art
[0002] In the semiconductor manufacturing process, the exposure machine irradiates the chrome plate / mask with UV light to transfer the chrome plate / mask pattern to the photoresist to obtain the pattern. In the production of TP (i.e., touch screen) and modules, several exposures are required to stack the required pattern.
[0003] During exposure, the first track generates a registration mark, which is used by the second track to grab the mark and match the pattern. At the same time, the second track generates a registration mark, which is used by the third track to grab the mark and match the pattern, and so on to ensure the design stacking of the pattern.
[0004] Due to the existence of multiple working steps, there will be deviations in the alignment accuracy during exposure, and manual confirmation is required under a microscope to confirm whether each pattern fits accurately. This requires the production line operators to be familiar with the product. If they are not familiar with it, they may not be able to confirm it properly, which will cause the pattern to be offset and unable to be recognized, resulting in the product being scrapped.
[0005] Chinese invention patent document CN107578987A discloses a gate double exposure patterning method, which is suitable for processing a composite structure to obtain a gate, wherein the composite structure includes a substrate, a gate layer, a hard mask layer and a first planarization layer arranged in sequence from bottom to top; characterized in that the method includes: step S1, using a first photoresist layer having a first photolithography pattern to etch the first planarization layer and the hard mask layer to transfer the first photolithography pattern to the hard mask layer, and the first photolithography pattern corresponds to a tangent line; step S2, after removing the first planarization layer, forming a second planarization layer above the hard mask layer; step S3, using a second photoresist layer having a second photolithography pattern to etch the second planarization layer and the hard mask layer to transfer the second photolithography pattern to the hard mask layer, and the second photolithography pattern corresponds to a gate oxide line; step S4, removing the second planarization layer; step S5, using the hard mask layer to etch the gate layer to form a gate.
[0006] Obviously, this patent aims to solve the problem of difficult control of the size and uniformity of the polysilicon gate, and cannot solve the existing exposure correction problem. Utility Model Content
[0007] Based on this, it is necessary to provide a mask structure for checking the overlap of exposure patterns in view of the above technical problems. The mask structure for checking the overlap of exposure patterns includes a mask body, and the mask body is provided with a first alignment ruler and a second alignment ruler. The first alignment ruler extends along the X direction, and the second alignment ruler extends along the Y direction. The first alignment ruler is provided with a plurality of first alignment ruler holes arranged linearly, and the second alignment ruler is provided with a plurality of second alignment ruler holes arranged linearly. The first alignment ruler holes and the second alignment ruler holes are both rectangular. In the first exposure operation, a first alignment ruler in the direction and a second alignment ruler in the direction are formed. Then, the second exposure is performed, and a new first alignment ruler and a second alignment ruler are generated. The new first alignment ruler and the second alignment ruler overlap with the old first alignment ruler and the second alignment ruler in the direction and directions respectively, and then observation is performed. The scale formed by the first spacing and the second spacing on the alignment ruler is used. If the scale exceeds the scale range, a deviation occurs, and the exposure needs to be adjusted. The correction of each exposure is deduced in the same way. By utilizing the overlapping effect of the first alignment ruler in the direction and the second alignment ruler in the direction, the operator can easily see the direction of the deviation and the specific degree of deviation, and adjust the exposure operation in time to avoid product scrapping.
[0008] In order to solve the above technical problems, the utility model adopts the following technical solutions:
[0009] A mask structure for checking the alignment of exposure patterns, characterized in that the mask structure for checking the alignment of exposure patterns comprises a mask body, the mask body is provided with a first alignment ruler and a second alignment ruler, the first alignment ruler extends along the X direction, the second alignment ruler extends along the Y direction,
[0010] The first alignment ruler is provided with a plurality of first alignment ruler holes arranged linearly, and the second alignment ruler is provided with a plurality of second alignment ruler holes arranged linearly.
[0011] As a preferred implementation of the mask structure for checking exposure pattern fit provided by the utility model, the first alignment ruler hole and the second alignment ruler hole are both rectangular.
[0012] As a preferred implementation of the mask structure for checking exposure pattern fit provided by the utility model, the spacing between adjacent first alignment scale holes is a first spacing, and the spacing between adjacent second alignment scale holes is a second spacing.
[0013] As a preferred implementation of the mask structure for checking the fit of exposure patterns provided by the utility model, the first alignment ruler hole and the second alignment ruler hole are both circular.
[0014] As a preferred implementation of the mask structure for checking exposure pattern fit provided by the utility model, the center distance between adjacent first alignment scale holes is the third spacing, and the center distance between adjacent second alignment scale holes is the fourth spacing.
[0015] A mask structure for checking the fit of exposure patterns, characterized in that the mask structure for checking the fit of exposure patterns comprises a mask body, the mask body is provided with a plurality of circumferentially distributed third alignment rulers, and the third alignment ruler is provided with a plurality of linearly arranged third alignment ruler holes.
[0016] As a preferred implementation of the mask structure for checking the overlap of exposure patterns provided by the utility model, the number of the third alignment rulers is 8.
[0017] As a preferred implementation of the mask structure for checking the fit of exposure patterns provided by the utility model, the interval angle of the adjacent third alignment rulers is a preset first angle.
[0018] As a preferred implementation of the mask structure for checking exposure pattern fit provided by the utility model, the spacing between adjacent third alignment scale holes is the fifth spacing.
[0019] As a preferred implementation of the mask structure for checking the fit of exposure patterns provided by the utility model, a center alignment hole is provided at the center of the third alignment ruler.
[0020] Compared with the prior art, the utility model has the following beneficial effects:
[0021] The utility model provides a mask structure for checking the fit of exposure patterns, wherein a first alignment ruler in a direction and a second alignment ruler in a direction are formed in the first exposure operation. Then, the second exposure is performed, and a new first alignment ruler and a second alignment ruler are generated. The new first alignment ruler and the second alignment ruler overlap with the old first alignment ruler and the second alignment ruler in the direction and directions, respectively, and then observation is performed. When the scale formed by the first spacing and the second spacing on the alignment ruler exceeds the scale range, a deviation occurs, and the exposure needs to be adjusted. The correction of each exposure is carried out in the same way. By utilizing the overlapping effect of the first alignment ruler in the direction and the second alignment ruler in the direction, the operator can easily see the direction of the deviation and the specific degree of deviation, and adjust the exposure operation in time to avoid product scrapping.
[0022] In addition, the first alignment ruler hole and the second alignment ruler hole can be set to be circular. The center distance of the adjacent first alignment ruler holes is the third spacing, and the center distance of the adjacent second alignment ruler holes is the fourth spacing. By using the overlapping effect of the first alignment ruler in the direction and the second alignment ruler in the direction, the operator can easily see the direction of the deviation and the specific degree of deviation, and adjust the exposure operation in time to avoid product scrapping.
[0023] In addition, a plurality of circumferentially distributed third alignment rulers may be provided on the mask body, and a plurality of linearly arranged third alignment ruler holes may be provided on the third alignment ruler. The number of the third alignment rulers is . In addition, the interval angle between the adjacent third alignment rulers is a preset first angle. The spacing between the adjacent third alignment ruler holes is a fifth spacing. A center alignment hole is provided at the center of the third alignment ruler. By utilizing the overlapping effect of the new third alignment ruler and the old third alignment ruler, the operator can easily see the direction of the deviation and the specific degree of deviation, and adjust the exposure operation in time to avoid product scrapping. In addition, the center alignment hole can also be used to assist in center positioning to further improve the accuracy of exposure correction. BRIEF DESCRIPTION OF THE DRAWINGS
[0024] In order to more clearly illustrate the scheme in the utility model, a brief introduction is given below to the drawings required for use in the description of the embodiments. Obviously, the drawings described below are some embodiments of the utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.
[0025] Figure 1 It is a structural schematic diagram of a mask structure for checking exposure pattern matching of the utility model;
[0026] Figure 2 This is a schematic structural diagram of a mask structure for checking exposure pattern alignment of the utility model, which is another embodiment;
[0027] Figure 3 This is a schematic structural diagram of a mask structure for checking exposure pattern alignment of the utility model, which is another embodiment;
[0028] The markings in the figure are as follows:
[0029] 1. Mask body; 2. First alignment ruler; 21. First alignment ruler hole; 3. Second alignment ruler; 31. Second alignment ruler hole; 4. Third alignment ruler; 41. Third alignment ruler hole; 5. Center alignment hole; D1. First spacing; D2. Second spacing; D3. Third spacing; D4. Fourth spacing; D5. Fifth spacing; D6. First angle. DETAILED DESCRIPTION
[0030] In order to enable those skilled in the art to better understand the solution of the utility model, the technical solution in the embodiment of the utility model will be clearly and completely described below in conjunction with the drawings in the embodiment of the utility model. Obviously, the described embodiment is only a part of the embodiment of the utility model, not all of the embodiments. Based on the embodiment of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the utility model.
[0031] As described in the background technology, in the prior art for semiconductors, during the semiconductor process manufacturing process, the exposure machine irradiates the chrome plate / mask plate with UV light, transfers the chrome plate / mask plate pattern to the photoresist, and thus obtains the pattern. In the production of TP (i.e., touch screen) and modules, several exposures are required to stack the required pattern. During exposure, the first pass generates an alignment mark, which is used to grab the mark for the second pass to fit the pattern. At the same time, the second pass generates an alignment mark for the third pass to grab the mark for the pattern fit, and so on to ensure the design stacking of the pattern. Due to the presence of multiple processes, there will be alignment accuracy deviations during exposure, and it is necessary to manually confirm under a microscope to confirm whether each pattern fits accurately. This requires the production line operators to be familiar with the product. If they are not familiar with it, they will not be able to confirm it in place, which will cause the pattern to be offset and cannot be recognized, resulting in the product being scrapped.
[0032] In order to solve this technical problem, the utility model provides a mask structure for checking the fit of an exposure pattern, comprising a mask body 1, on which a first alignment ruler 2 and a second alignment ruler 3 are provided, wherein the first alignment ruler 2 extends along the X direction, and the second alignment ruler 3 extends along the Y direction. The first alignment ruler 2 is provided with a plurality of linearly arranged first alignment ruler holes 21, and the second alignment ruler 3 is provided with a plurality of linearly arranged second alignment ruler holes 31. It should be noted that the first alignment ruler holes 21 and the second alignment ruler holes 31 are both rectangular. In addition, the spacing between adjacent first alignment ruler holes 21 is a first spacing D1, and the spacing between adjacent second alignment ruler holes 31 is a second spacing D2.
[0033] Through the above structural design, the first alignment ruler 2 in the X direction and the second alignment ruler 3 in the Y direction are formed in the first exposure operation. Then, the second exposure is performed, and a new first alignment ruler 2 and a new second alignment ruler 3 are generated. The new first alignment ruler 2 and the new second alignment ruler 3 overlap with the old first alignment ruler 2 and the old second alignment ruler 3 in the X and Y directions respectively, and then observation is performed. Using the scale formed by the first spacing D1 and the second spacing D2 on the alignment ruler, if it exceeds the scale range, there will be deviation, and the exposure needs to be adjusted. The correction of each exposure is deduced in this way. Using the overlapping effect of the first alignment ruler 2 in the X direction and the second alignment ruler 3 in the Y direction, the operator can easily see the direction of the deviation and the specific degree of deviation, and adjust the exposure operation in time to avoid product scrapping.
[0034] In order to enable those skilled in the art to better understand the present invention, the technical solutions in the embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings, so that the advantages and features of the present invention can be more easily understood by those skilled in the art, thereby making a clearer and more definite definition of the protection scope of the present invention.
[0035] It should be noted that, in the absence of conflict, the embodiments of the present invention and the features and technical solutions in the embodiments may be combined with each other.
[0036] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.
[0037] Example 1
[0038] like Figure 1 As shown, the mask structure for checking exposure pattern fit comprises a mask body 1, on which a first alignment ruler 2 and a second alignment ruler 3 are provided. The first alignment ruler 2 extends along the X direction, and the second alignment ruler 3 extends along the Y direction.
[0039] The first alignment ruler 2 is provided with a plurality of first alignment ruler holes 21 arranged in a linear manner, and the second alignment ruler 3 is provided with a plurality of second alignment ruler holes 31 arranged in a linear manner.
[0040] It should be noted that the first alignment ruler hole 21 and the second alignment ruler hole 31 are both rectangular.
[0041] In addition, the spacing between the adjacent first alignment ruler holes 21 is a first spacing D1, and the spacing between the adjacent second alignment ruler holes 31 is a second spacing D2.
[0042] The working mode of this embodiment is described below.
[0043] In the first exposure process, the first alignment scale 2 in the X direction and the second alignment scale 3 in the Y direction are formed. Then, the second exposure is performed, and a new first alignment scale 2 and a new second alignment scale 3 are generated. The new first alignment scale 2 and the new second alignment scale 3 overlap with the old first alignment scale 2 and the old second alignment scale 3 in the X and Y directions, respectively, and then observation is performed. The scale formed by the first spacing D1 and the second spacing D2 on the alignment scale is used. If the scale range is exceeded, there is a deviation, and the exposure needs to be adjusted. The correction of each exposure is deduced in this way.
[0044] By utilizing the overlapping effect of the first alignment ruler 2 in the X direction and the second alignment ruler 3 in the Y direction, the operator can easily see the direction of the deviation and the specific degree of deviation, and adjust the exposure operation in time to avoid product scrapping.
[0045] Example 2
[0046] like Figure 2 As shown, the mask structure for checking the overlay of the exposure pattern provided in Example 1 is further optimized. Specifically, the first alignment ruler hole 21 and the second alignment ruler hole 31 are both circular.
[0047] It should be noted that the distance between the centers of the adjacent first alignment ruler holes 21 is the third distance D3, and the distance between the centers of the adjacent second alignment ruler holes 31 is the fourth distance D4.
[0048] The working mode of this embodiment is described below.
[0049] In the first exposure process, the first alignment scale 2 in the X direction and the second alignment scale 3 in the Y direction are formed. Then, the second exposure is performed, and a new first alignment scale 2 and a new second alignment scale 3 are generated. The new first alignment scale 2 and the new second alignment scale 3 overlap with the old first alignment scale 2 and the old second alignment scale 3 in the X and Y directions, respectively, and then observation is performed. The scale formed by the third spacing D3 and the fourth spacing D4 on the alignment scale is used. If the scale range is exceeded, there is a deviation, and the exposure needs to be adjusted. The correction of each exposure is deduced in this way.
[0050] By utilizing the overlapping effect of the first alignment ruler 2 in the X direction and the second alignment ruler 3 in the Y direction, the operator can easily see the direction of the deviation and the specific degree of deviation, and adjust the exposure operation in time to avoid product scrapping.
[0051] Example 3
[0052] like Figure 3As shown, the mask structure for checking the fit of the exposure pattern provided in Example 1 or 2 is further optimized. Specifically, the mask structure for checking the fit of the exposure pattern includes a mask body 1, on which a plurality of circumferentially distributed third alignment scales 4 are provided, and on which a plurality of linearly arranged third alignment scale holes 41 are provided.
[0053] It should be noted that the number of the third alignment rulers 4 is 8.
[0054] In addition, the interval angle of the adjacent third alignment rulers 4 is a preset first angle D6. The interval between the adjacent third alignment ruler holes 41 is a fifth interval D5.
[0055] A center alignment hole 5 is provided at the center of the third alignment ruler 4 .
[0056] The working mode of this embodiment is described below.
[0057] The first exposure process forms the third alignment ruler 4 in eight directions. Then, the second exposure process generates a new third alignment ruler 4 in eight directions, and the new third alignment ruler 4 overlaps with the old third alignment ruler 4, and then observation is performed.
[0058] By using the overlapping effect of the new third alignment ruler 4 and the old third alignment ruler 4, the operator can easily see the direction of the deviation and the specific degree of deviation, and adjust the exposure operation in time to avoid product scrapping. In addition, the center alignment hole 5 can also be used to assist in center positioning, further improving the accuracy of exposure correction.
[0059] The terms "coupling" and "coupling" involved in the embodiments of the present application should be understood in a broad sense. For example, they may refer to a direct physical connection, or an indirect connection achieved through electronic devices, such as a connection achieved through resistors, inductors, capacitors or other electronic devices.
[0060] In the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral one; it can be a mechanical connection, an electrical connection, or communication with each other; it can be a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.
[0061] Obviously, the embodiments described above are only some embodiments of the present application, rather than all embodiments. The preferred embodiments of the present application are given in the accompanying drawings, but they do not limit the patent scope of the present application. The present application can be implemented in many different forms. On the contrary, the purpose of providing these embodiments is to make the understanding of the disclosure of the present application more thorough and comprehensive. Although the present application is described in detail with reference to the aforementioned embodiments, for those skilled in the art, it is still possible to modify the technical solutions recorded in the aforementioned specific implementation methods, or to perform equivalent replacement of some of the technical features therein. Any equivalent structure made using the contents of the specification and drawings of this application, directly or indirectly used in other related technical fields, is similarly within the scope of patent protection of this application.
Claims
1. A mask structure for checking the alignment of exposure patterns, It is characterized in that The mask structure for checking the overlap of exposure patterns comprises a mask body (1), on which a first alignment ruler (2) and a second alignment ruler (3) are provided, wherein the first alignment ruler (2) extends along the X direction, and the second alignment ruler (3) extends along the Y direction. The first alignment ruler (2) is provided with a plurality of first alignment ruler holes (21) arranged linearly, and the second alignment ruler (3) is provided with a plurality of second alignment ruler holes (31) arranged linearly.
2. The mask structure for checking the alignment of exposure patterns according to claim 1, It is characterized in that The first alignment ruler hole (21) and the second alignment ruler hole (31) are both rectangular.
3. The mask structure for checking the alignment of exposure patterns according to claim 2, It is characterized in that The spacing between the adjacent first alignment ruler holes (21) is a first spacing (D1), and the spacing between the adjacent second alignment ruler holes (31) is a second spacing (D2).
4. The mask structure for checking the alignment of exposure patterns according to claim 1, It is characterized in that The first alignment ruler hole (21) and the second alignment ruler hole (31) are both circular.
5. The mask structure for checking the alignment of exposure patterns according to claim 4, It is characterized in that The distance between the centers of the adjacent first alignment ruler holes (21) is a third distance (D3), and the distance between the centers of the adjacent second alignment ruler holes (31) is a fourth distance (D4).
6. A mask structure for checking the alignment of exposure patterns, It is characterized in that The mask structure for checking exposure pattern fit comprises a mask body (1), the mask body (1) is provided with a plurality of circumferentially distributed third alignment rulers (4), and the third alignment ruler (4) is provided with a plurality of linearly arranged third alignment ruler holes (41).
7. The mask structure for checking the alignment of exposure patterns according to claim 6, It is characterized in that The number of the third alignment rulers (4) is 8.
8. The mask structure for checking the alignment of exposure patterns according to claim 6, It is characterized in that The interval angle between the adjacent third alignment rulers (4) is a preset first angle (D6).
9. The mask structure for checking the alignment of exposure patterns according to claim 6, It is characterized in that The distance between the adjacent third alignment ruler holes (41) is a fifth distance (D5).
10. The mask structure for checking the alignment of exposure patterns according to claim 6, It is characterized in that A center alignment hole (5) is provided at the center of the third alignment ruler (4).