Silicon carbide epitaxial growth feeding equipment with feeding detection function

By introducing an automated detection system of optical scanners and robots into the silicon carbide epitaxial equipment, the error mixing problem caused by manual operation is solved, production efficiency and product quality are improved, and automated loading recognition and error prevention functions are realized.

CN222313385UActive Publication Date: 2025-01-07DONGGUAN TIANYU SEMICON TECH
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Patent Information

Application Number
CN202421122775.1
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-05-22
Publication Date
2025-01-07
Estimated Expiration
2034-05-22

AI Technical Summary

Technical Problem

The loading process of existing silicon carbide epitaxial equipment mainly relies on manual operations and cannot be automated, resulting in increased labor costs, low production efficiency, low product quality, and difficulty in preventing mismixed materials, resulting in scrap loss.

Method used

A silicon carbide epitaxial growth feeding equipment with loading detection function was designed. The wafer ID was identified using an optical scanner, and automated loading detection was realized through robots and transmission channels to prevent mismixed materials, including loading detection chambers. The chamber, the intermediate vacuum transfer chamber and the MOCVD reaction chamber are used to compare information and control positions using pallet handling robots and automatic positioning devices.

Benefits of technology

Automatic monitoring and identification of feeding wafers is realized, preventing mismixed materials, reducing costs, and improving production efficiency and product yield.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model discloses silicon carbide epitaxial growth feeding equipment with a feeding detection function, which comprises a feeding detection chamber, a middle vacuum transfer chamber and an MOCVD (Metal Organic Chemical Vapor Deposition) reaction chamber, a wafer feeding tray, a wafer carrying manipulator, an optical scanner, a wafer tray and a tray carrying manipulator are arranged in the feeding detection chamber; the optical scanner is located over the wafer tray, the wafer carrying mechanical arm takes wafers from the wafer feeding tray, turns the wafers by 180 degrees and then places the wafers on the wafer tray, and the optical scanner scans the IDs of the wafers on the wafer tray to collect information and transmits the collected information to the PC end for information comparison. According to the utility model, the fed wafer can be monitored and identified, the ID information on the product is scanned through the optical scanner and is transmitted to the PC terminal, and the PC terminal compares the ID information with the stored product ID to judge whether the product is the same batch of product, so that the occurrence of wrong material mixing is prevented, the cost is reduced, the production efficiency is improved, and the product yield is improved.
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Description

Technical Field

[0001] The utility model relates to silicon carbide epitaxial growth equipment, in particular to silicon carbide epitaxial growth feeding equipment with a feeding detection function. Background Art

[0002] At present, most of the loading process of silicon carbide epitaxial equipment is manually operated and cannot be automated. For example, the ID information of the loaded wafers must be checked to see if there are any wrong materials or mixed materials. These must be compared manually one number at a time or one letter at a time. The system cannot automatically identify whether there are any wafers with other batch numbers that have been loaded. For factories that mass-produce silicon carbide epitaxial wafers, such technology will cause additional labor costs and cannot achieve true fool-proofing and error-proofing. It will cause scrap losses after wrongly mixed materials are added to the epitaxial wafers, greatly reducing production efficiency and production quality. Using the automated loading technology of this solution, the loading can be monitored and identified to prevent the occurrence of wrongly mixed materials, reduce costs, improve production efficiency and increase product yield. Summary of the invention

[0003] In order to overcome the shortcomings and deficiencies in the prior art, the purpose of the utility model is to provide a silicon carbide epitaxial growth feeding device with a feeding detection function.

[0004] The purpose of the utility model is achieved through the following technical solutions: a silicon carbide epitaxial growth feeding device with a feeding detection function, comprising a feeding detection chamber, an intermediate vacuum transfer chamber and an MOCVD reaction chamber, wherein a wafer feeding tray, a wafer handling manipulator, an optical scanner, a wafer tray and a tray handling manipulator are arranged in the feeding detection chamber, wherein the optical scanner is located directly above the wafer tray, wherein the wafer handling manipulator takes the wafer from the wafer feeding tray, flips the wafer 180 degrees and places it on the wafer tray, so that the ID side of the wafer faces upward, wherein the optical scanner scans and collects information from the wafer ID on the wafer tray, and transmits the collected information to the PC for information comparison, wherein the PC compares the collected information with the stored product information and determines whether it is a product of the same batch. If the wafer information on the wafer tray is consistent with the product information stored on the PC, it is determined that the wafer ID is correct and the feeding can be performed, and the tray handling manipulator transports the wafer tray to the automatic positioning device. If there is a difference in the compared information, the feeding action is stopped, a buzzer reminder is sounded, and a feeding error prompt box pops up on the display.

[0005] As an improvement of the silicon carbide epitaxial growth feeding equipment with a feeding detection function of the utility model, the feeding detection chamber is connected to the intermediate vacuum transfer chamber through a first transmission channel, the intermediate vacuum transfer chamber and the MOCVD reaction chamber are connected through a second transmission channel, an automatic positioning device and a first gate valve are provided in the first transmission channel, a second gate valve is provided in the second transmission channel, the pallet transport robot takes the wafer pallet from the position of the wafer pallet and transports the wafer pallet to the automatic positioning device, and the automatic positioning device positions the wafer pallet in the middle position.

[0006] As an improvement of the silicon carbide epitaxial growth feeding device with feeding detection function of the utility model, the feeding end of the first conveying channel is also provided with a closed door, and the closed door is closed after the automatic positioning device positions the wafer tray.

[0007] As an improvement of the silicon carbide epitaxial growth feeding equipment with a feeding detection function of the utility model, an intermediate transfer robot is provided in the intermediate vacuum transfer chamber. When the intermediate transfer robot takes the chip tray from the first conveying channel, the first gate valve is opened. After the chip tray is taken out by the intermediate transfer robot, the first gate valve is closed.

[0008] As an improvement of the silicon carbide epitaxial growth feeding equipment with a feeding detection function of the utility model, when the intermediate transfer robot transports the wafer tray into the MOCVD reaction chamber, the second gate valve is opened, and when the intermediate transfer robot is reset, the second gate valve is closed.

[0009] As an improvement of the silicon carbide epitaxial growth feeding equipment with a feeding detection function of the utility model, a graphite base is provided in the MOCVD reaction chamber, a base is provided on the graphite base, the wafer tray is placed on the base, and a radio frequency heating coil is provided outside the MOCVD reaction chamber, and the radio frequency heating coil can control the temperature in the MOCVD reaction chamber.

[0010] As an improvement of the silicon carbide epitaxial growth feeding equipment with feeding detection function of the utility model, the automatic positioning device includes a positioning platform, and a plurality of positioning cylinders are arranged at intervals on the edge of the positioning platform, each positioning cylinder positions one side of the wafer tray.

[0011] The beneficial effect of the utility model is that the utility model can monitor and identify the loaded wafers, scan the ID information on the product through an optical scanner, and transmit the information to the PC. The PC compares it with the stored product ID to determine whether it is a product from the same batch, thereby preventing the occurrence of wrong mixing of materials, reducing costs, improving production efficiency and increasing product yield. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a schematic diagram of the structure of the utility model;

[0013] The accompanying drawings are marked as follows: 1. loading and detection chamber, 2. intermediate vacuum transfer chamber, 3. MOCVD reaction chamber, 4. wafer loading tray, 5. wafer handling robot, 6. optical scanner, 7. wafer tray, 8. tray handling robot, 9. first conveying channel, 10. second conveying channel, 21. intermediate transfer robot, 31. graphite base, 32. base, 33. radio frequency heating coil. DETAILED DESCRIPTION

[0014] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0015] It should be noted that all directional indications (such as up, down, left, right, front, back...) in the embodiments of the present invention are only used to explain the relative position relationship, movement status, etc. between the components under a specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indication will also change accordingly.

[0016] In addition, the descriptions of "first", "second", etc. in the present utility model are only used for descriptive purposes and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In addition, the technical solutions between the various embodiments can be combined with each other, but they must be based on the ability of ordinary technicians in the field to implement them. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such a combination of technical solutions does not exist and is not within the scope of protection required by the present utility model.

[0017] like Figure 1As shown, a silicon carbide epitaxial growth feeding device with a feeding detection function includes a feeding detection chamber 1, an intermediate vacuum transfer chamber 2 and an MOCVD reaction chamber 3. A wafer feeding tray 4, a wafer handling manipulator 5, an optical scanner 6, a wafer tray 7 and a tray handling manipulator 8 are arranged in the feeding detection chamber 1. The optical scanner 6 is located directly above the wafer tray 7. The wafer handling manipulator 5 takes the wafer from the wafer feeding tray 4, flips the wafer 180 degrees and places it on the wafer tray 7. The optical scanner 6 scans and collects information from the wafer ID on the wafer tray 7, and transmits the collected information to the PC for information comparison. The PC compares the collected information with the stored product information and determines whether it is the same batch of products. If the wafer information on the wafer tray 7 is consistent with the product information stored on the PC, it is determined that the wafer ID is correct and the feeding can be performed. The tray handling manipulator then transports the wafer tray to the automatic positioning device. If there is a difference in the compared information, the feeding action is stopped, a buzzer reminder is sounded, and a feeding error prompt box pops up on the display.

[0018] Preferably, the loading detection chamber 1 is connected to the intermediate vacuum transfer chamber 2 through a first conveying channel 9, and the intermediate vacuum transfer chamber 2 and the MOCVD reaction chamber 3 are connected through a second conveying channel 10. An automatic positioning device and a first gate valve are provided in the first conveying channel 9, and a second gate valve is provided in the second conveying channel 10. The pallet transport robot 8 takes the wafer tray from the position of the wafer tray 7 and transports the wafer tray 7 to the automatic positioning device, and the automatic positioning device positions the wafer tray in the middle position.

[0019] Preferably, a closed door is further provided at the feed end of the first conveying channel 9, and the closed door is closed after the automatic positioning device positions the wafer tray.

[0020] Preferably, an intermediate transfer robot 21 is provided in the intermediate vacuum transfer chamber 2. When the intermediate transfer robot 21 takes the chip tray 7 from the first transfer channel 9, the first gate valve is opened. After the chip tray 7 is taken out by the intermediate transfer robot 21, the first gate valve is closed.

[0021] Preferably, when the intermediate transfer robot 21 transports the wafer tray 7 into the MOCVD reaction chamber 3 , the second gate valve is opened, and when the intermediate transfer robot 21 is reset, the second gate valve is closed.

[0022] Preferably, a graphite base 31 is provided in the MOCVD reaction chamber 3, a base 32 is provided on the graphite base 31, the wafer tray 7 is placed on the base 32, and a radio frequency heating coil 33 is provided outside the MOCVD reaction chamber 3, and the radio frequency heating coil 33 can control the temperature in the MOCVD reaction chamber.

[0023] Preferably, the automatic positioning device (not shown) comprises a positioning platform, and a plurality of positioning cylinders are arranged at intervals on the edge of the positioning platform, and each positioning cylinder positions one side of the wafer tray.

[0024] Although the embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and structures of the present invention, and the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A silicon carbide epitaxial growth feeding device with a feeding detection function, characterized in that: It includes a loading detection chamber, an intermediate vacuum transfer chamber and an MOCVD reaction chamber. The loading detection chamber is provided with a wafer loading tray, a wafer handling robot, an optical scanner, a wafer tray and a tray handling robot. The optical scanner is located directly above the wafer tray. The wafer handling robot takes the wafer from the wafer loading tray, flips the wafer 180 degrees and places it on the wafer tray. The optical scanner scans the wafer ID on the wafer tray to collect information and transmits the collected information to a PC for information comparison. The PC compares the collected information with the stored product information and determines whether they are products from the same batch.

2. The silicon carbide epitaxial growth feeding device with feeding detection function according to claim 1 is characterized in that: The loading detection chamber is communicated with the intermediate vacuum transfer chamber through a first transmission channel, and the intermediate vacuum transfer chamber is communicated with the MOCVD reaction chamber through a second transmission channel. An automatic positioning device and a first gate valve are provided in the first transmission channel, and a second gate valve is provided in the second transmission channel. The pallet transport robot takes the wafer pallet from the position of the wafer pallet and transports the wafer pallet to the automatic positioning device, and the automatic positioning device positions the wafer pallet in the middle position.

3. The silicon carbide epitaxial growth feeding device with feeding detection function according to claim 2 is characterized in that: The feeding end of the first conveying channel is also provided with a closed door, and after the automatic positioning device positions the wafer tray, the closed door is closed.

4. The silicon carbide epitaxial growth feeding device with feeding detection function according to claim 2, characterized in that: An intermediate transfer robot is provided in the intermediate vacuum transfer chamber. When the intermediate transfer robot takes the wafer tray from the first transmission channel, the first gate valve is opened. After the wafer tray is taken out by the intermediate transfer robot, the first gate valve is closed.

5. The silicon carbide epitaxial growth feeding device with feeding detection function according to claim 4 is characterized in that: When the intermediate transfer robot transports the wafer tray into the MOCVD reaction chamber, the second gate valve is opened, and when the intermediate transfer robot is reset, the second gate valve is closed.

6. The silicon carbide epitaxial growth feeding device with feeding detection function according to claim 5, characterized in that: A graphite base is arranged in the MOCVD reaction chamber, a susceptor is arranged on the graphite base, the wafer tray is placed on the susceptor, and a radio frequency heating coil is arranged outside the MOCVD reaction chamber, and the radio frequency heating coil can control the temperature in the MOCVD reaction chamber.

7. The silicon carbide epitaxial growth feeding device with feeding detection function according to claim 2, characterized in that: The automatic positioning device comprises a positioning platform, and a plurality of positioning cylinders are arranged at intervals on the edge of the positioning platform, and each positioning cylinder positions one side of the wafer tray.