Beam current control device and ion implantation equipment

Abstract

The utility model belongs to the technical field of semiconductor processing, and discloses a beam control device and ion implantation equipment, the beam control device comprises a first screening plate and a second screening plate which are arranged front and back along the ion implantation direction, the first screening plate is provided with a first screening port, and the second screening plate is provided with a second screening port; the first screening opening and the second screening opening at least partially coincide to form an ion implantation window, the first screening plate and the second screening plate can rise and fall in a reciprocating mode in the direction perpendicular to the ion implantation direction so as to adjust the height and / or the area of the ion implantation window, and the angle measuring assembly comprises a graphite angle measuring plate capable of rising and falling; the graphite angle measuring plate has a measuring state of rising to shield the ion implantation window and a non-measuring state of avoiding the ion implantation window. The beam control device provided by the utility model can adjust the ion implantation angle, enables the shape of the ion beam to be matched with the size of a wafer, and improves the process quality and versatility of ion implantation equipment.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor processing, in particular to a beam control device and ion implantation equipment. Background Art

[0002] Ion implantation is the process of injecting a certain type of ionized ion, after acceleration and deceleration, and multiple ion screening, to form an ion beam into the surface of the wafer to complete the doping requirements. In the process of ion implantation, screening and decontamination of the ion beam and control of the injection direction are two key process requirements. The width, shape, injection angle and other qualities of the ion beam formed by screening and decontamination and injection direction control play a decisive role in the effect of the ion implantation process. Existing ion implanters rarely correct the ion injection angle in the horizontal direction. When the ion injection angle deviates, it will affect the injection depth and injection uniformity, thereby affecting the process quality. Moreover, the shape of the ion beam is determined by the graphite baffle. The injection port formed by the graphite baffle forms an ion beam that matches the wafer size, which is usually only applicable to wafers with one size characteristic and has poor versatility. Utility Model Content

[0003] The utility model aims to provide a beam control device and an ion implantation device, which are used to solve the problems that the existing ion implantation machine fails to correct the ion implantation angle, thereby affecting the wafer process quality, and cannot adapt to wafers with various different size characteristics and has poor versatility.

[0004] To achieve this purpose, the utility model adopts the following technical solutions:

[0005] In a first aspect, a beam control device is provided, comprising a screening component and an angle measurement component, wherein the screening component comprises a first screening plate and a second screening plate arranged front and rear along an ion implantation direction, the first screening plate is provided with a first screening port, the second screening plate is provided with a second screening port, the first screening port and the second screening port at least partially overlap to form an ion implantation window, the first screening plate and the second screening plate can be respectively lifted and lowered reciprocatingly in a direction perpendicular to the ion implantation direction to adjust the height and / or area of ​​the ion implantation window, the angle measurement component comprises a graphite angle measurement plate that can be lifted and lowered reciprocatingly in a direction perpendicular to the ion implantation direction, the graphite angle measurement plate having a measuring state in which it is lifted to block the ion implantation window, and a non-measuring state in which it avoids the ion implantation window.

[0006] In one embodiment, the beam control device also includes a stage assembly and a lifting control assembly, and the lifting control assembly can lift and lower the first screening plate, the second screening plate and the graphite angle measurement plate respectively, and the lifting control assembly and the first screening plate, the second screening plate and the graphite angle measurement plate are respectively arranged on both sides of the stage assembly, and the support members of the screening assembly and the support members of the angle measurement assembly pass through the stage assembly to connect the lifting control assembly.

[0007] In one of the embodiments, the beam control device further includes a differential sealing assembly, and the differential sealing assembly is used to dynamically seal the support member of the screening assembly and the support member of the angle measurement assembly.

[0008] In one embodiment, the support member of the screening assembly includes a first support shaft and a second support shaft, and the support member of the angle measuring assembly is a third support shaft, the first support shaft and the second support shaft are respectively connected to the first screening plate and the second screening plate, the third support shaft is connected to the graphite angle measurement plate, the first support shaft, the second support shaft and the third support shaft all pass through the bench assembly and extend to the other side of the bench assembly, the differential sealing assembly is provided with multiple groups, and the multiple groups of differential sealing assemblies are respectively connected to the first support shaft, the second support shaft and the third support shaft, and the differential sealing assembly includes a seal, and the seal is used to seal the connection between the first support shaft, the second support shaft, the third support shaft and the bench assembly.

[0009] In one embodiment, the lifting control assembly includes a lifting motor and a screw, the output end of the lifting motor is connected to the screw, and the screw is drivingly connected to the first screening plate or the second screening plate, so that the first screening plate or the second screening plate can be lifted and lowered reciprocatingly; and / or,

[0010] The lifting control assembly comprises a double-acting cylinder, and the double-acting cylinder is drivingly connected to the graphite angle measuring plate so that the graphite angle measuring plate can be lifted and lowered reciprocatingly.

[0011] In one embodiment, the lifting control assembly also includes a cylinder support plate, which supports the double-acting cylinder. One of the cylinder support plate and the stand assembly is provided with a waist-shaped hole, and the other is provided with a connecting hole. The length of the waist-shaped hole extends along the lifting direction of the graphite angle measuring plate. Fasteners pass through the waist-shaped hole and the connecting hole to allow the cylinder support plate to be detachably connected to the stand assembly.

[0012] In one embodiment, the beam control device further comprises a water cooling assembly, and the water cooling assembly is used to cool the first screening plate and / or the second screening plate and / or the graphite angle measurement plate.

[0013] In one embodiment, the water cooling assembly is provided with multiple groups, and the multiple groups of water cooling assemblies are correspondingly arranged with the first screening plate, the second screening plate, and the graphite angle measurement plate, the water cooling assembly includes a water inlet pipe and a water outlet pipe, one end of the water inlet pipe and the water outlet pipe are connected to an external cooling device, the screening assembly includes a first support shaft and a second support shaft, the angle measurement assembly includes a third support shaft, the first support shaft and the second support shaft are connected to the first screening plate and the second screening plate, the third support shaft is connected to the graphite angle measurement plate, the first support shaft, the second support shaft and the third support shaft all pass through the stand assembly and extend to the other side of the stand assembly, the first support shaft, the second support shaft and the third support shaft are each provided with a hollow water cooling cavity, and the other end of the water inlet pipe and the water outlet pipe are each connected to the water cooling cavity.

[0014] In one embodiment, the lifting control assembly further includes a stroke detection mechanism, and the stroke detection mechanism is used to detect the lifting stroke of the first screening plate and / or the second screening plate and / or the graphite angle measurement plate; and / or,

[0015] The screening assembly also includes a spare support tube, which passes through the stand assembly and extends to the other side of the stand assembly and is connected to the lifting control assembly. The end of the spare support tube away from the lifting control assembly can be detachably connected to the first screening plate or the second screening plate or the graphite angle measurement plate.

[0016] In one embodiment, the beam control device includes a plurality of lifting drives, which are respectively used to control the lifting and lowering of the first screening plate, the second screening plate and the graphite angle measurement plate; among the plurality of projections formed by the plurality of lifting drives in a horizontal plane perpendicular to the ion injection direction, at least two of the projections have at least partial overlap in the horizontal plane perpendicular to the ion injection direction.

[0017] In a second aspect, an ion implantation device is provided, comprising the beam control device as described above.

[0018] Beneficial effects of the utility model:

[0019] The beam control device provided by the utility model comprises a screening component and an angle measurement component. The screening component comprises a first screening plate and a second screening plate arranged front and back along the ion implantation direction. A first screening port is provided on the first screening plate, and a second screening port is provided on the second screening plate. The first screening port and the second screening port at least partially overlap to form an ion implantation window. The first screening plate and the second screening plate can be reciprocated and lifted in a vertical plane perpendicular to the ion implantation direction to adjust the height and / or area of ​​the ion implantation window. When the height of the ion implantation window changes, the ion implantation angle can be adjusted so that the beam meeting the implantation angle passes through the ion implantation window to achieve the implantation depth and implantation uniformity requirements required by the implantation process, thereby improving the process quality of the wafer. When the area of ​​the ion implantation window changes, the ion implantation requirements of wafers with different size characteristics are met, so that the shape of the ion beam is adapted to the wafer size, thereby improving the versatility of the ion implantation device. The graphite angle measurement plate of the angle measurement component has a measuring state in which it rises to shield the ion implantation window, and a non-measuring state in which it avoids the ion implantation window. When the graphite angle measurement plate is in the measuring state, it is in the beam path and is thus bombarded by the beam. The ion injection angle is detected by the bombardment angle, providing a basis for the screening component to adjust the ion injection window. After the detection is completed, the graphite angle measurement plate retracts to the non-measurement state avoiding the ion injection window and will not affect the normal movement of the beam.

[0020] The ion implantation equipment provided by the utility model has the above-mentioned beam control device, which adjusts the height position and / or area of ​​the ion implantation window by reciprocating the first screening plate and the second screening plate perpendicular to the ion implantation direction to adjust the ion implantation angle and make the shape of the ion beam flow match the wafer size, thereby improving the process quality and versatility of the ion implantation equipment. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 It is a structural schematic diagram of the beam control device provided by an embodiment of the utility model at a certain viewing angle;

[0022] Figure 2 is a schematic structural diagram of the beam control device provided by an embodiment of the utility model from another perspective;

[0023] Figure 3 It is a bottom view schematic diagram of a partial structure of a beam control device provided in an embodiment of the utility model.

[0024] In the figure:

[0025] 1. Screening assembly; 11. First screening plate; 111. First screening port; 12. Second screening plate; 121. Second screening port; 13. First support shaft; 14. Second support shaft; 15. Spare support tube; 2. Angle measurement assembly; 21. Graphite angle measurement plate; 22. Third support shaft; 3. Stand assembly; 31. Main mounting plate; 32. Side mounting plate; 4. Lifting control assembly; 41. Lifting motor; 42. Double-acting cylinder; 43. Cylinder support plate; 431. Waist-shaped hole; 5. Differential seal assembly; 6. Water cooling assembly;

[0026] 100, vacuum area; 200, atmospheric area. DETAILED DESCRIPTION

[0027] The present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are only used to explain the present invention, rather than to limit the present invention. It should also be noted that, for ease of description, only the parts related to the present invention, rather than all structures, are shown in the accompanying drawings.

[0028] In the description of the present invention, unless otherwise clearly specified and limited, the terms "connected", "connected", and "fixed" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0029] In the present utility model, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0030] In the description of this embodiment, the terms "upper", "lower", "left", "right" and other directions or positional relationships are based on the directions or positional relationships shown in the drawings, and are only for the convenience of description and simplified operation, rather than indicating or implying that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and therefore cannot be understood as a limitation of the present invention. In addition, the terms "first" and "second" are only used to distinguish in the description and have no special meaning.

[0031] like Figure 1 and Figure 2 As shown, this embodiment first provides a beam control device, which is used to control and screen the beam that is about to enter the vacuum region 100. The wafer is set in the vacuum region 100 and receives ion implantation. The beam control device includes a screening component 1 and an angle measurement component 2. The screening component 1 includes a first screening plate 11 and a second screening plate 12 arranged front and back along the ion implantation direction. The first screening plate 11 is provided with a first screening port 111, and the second screening plate 12 is provided with a second screening port 121. The first screening port 111 and the second screening port 121 at least partially overlap to form an ion implantation window. The ions generated by the ion generator (not shown in the figure) enter the vacuum region 100 through the ion implantation window to perform an ion implantation process on the wafer. The first screening plate 11 and the second screening plate 12 are formed by processing graphite plates. Figure 2 In the figure, the X direction is the ion implantation direction.

[0032] The first screening plate 11 and the second screening plate 12 can be lifted and lowered reciprocatingly in the vacuum area 100, respectively, in a direction perpendicular to the ion implantation direction, so as to adjust the height and / or area of ​​the ion implantation window. The ion implantation window formed by the first screening plate 11 and the second screening plate 12 can control whether ion beams of different energies pass through after deflection, wherein ions that do not meet the energy requirements will collide with the area outside the ion implantation window and cannot pass through, thereby realizing ion screening. When the height of the ion implantation window changes, the ion implantation angle can be adjusted so that the beam that meets the implantation angle passes through the ion implantation window, so as to achieve the implantation depth and implantation uniformity requirements required by the implantation process, thereby improving the process quality of the wafer. When the area of ​​the ion implantation window changes, the ion implantation requirements of wafers with different size characteristics are met, so that the shape of the ion beam is adapted to the wafer size, thereby improving the versatility of the ion implantation device.

[0033] The angle measurement assembly 2 includes a graphite angle measurement plate 21 that can be lifted and lowered reciprocally in a direction perpendicular to the ion injection direction. The graphite angle measurement plate 21 has a measurement state in which it is lifted to shield the ion injection window, and a non-measurement state in which it avoids the ion injection window. When the graphite angle measurement plate 21 is in the measurement state, due to shielding the ion injection window, the graphite angle measurement plate 21 is on the beam path, thereby receiving beam bombardment, and the ion injection angle is detected by the bombardment angle, providing a basis for the screening assembly 1 to adjust the ion injection window; after the detection is completed, the graphite angle measurement plate 21 retreats to the non-measurement state in which it avoids the ion injection window, and will not affect the normal movement of the beam.

[0034] The area change of the ion implantation window is achieved by changing the width in the lifting direction.

[0035] In order to improve the adjustment response speed of the screening component 1, the angle measurement component 2 is connected to the screening component 1 through communication, and the angle measurement component 2 feeds back the ion injection angle detected by the graphite angle measurement plate 21 to the screening component 1. The screening component 1 adjusts the positions of the first screening plate 11 and the second screening plate 12 in real time according to the received data signal, and the adjustment response speed is faster. The communication connection principle between the angle measurement component 2 and the screening component 1 is the existing technology in the field, and this embodiment will not be repeated here.

[0036] The beam control device forms a working bench through the bench assembly 3. The bench assembly 3 has a general mounting plate 31 as a support for the screening assembly 1 and the angle measurement assembly 2. The first screening plate 11, the second screening plate 12 and the graphite angle measurement plate 21 are vertically lifted and lowered. The two sides of the general mounting plate 31 are respectively the vacuum area 100 and the atmospheric area 200. Since the lifting control assembly 4 needs to work in the atmospheric area 200, and the first screening plate 11, the second screening plate 12 and the graphite angle measurement plate 21 need to work in the vacuum area 100, the lifting control assembly 4 and the first screening plate 11, the second screening plate 12 and the graphite angle measurement plate 21 are respectively located on both sides of the general mounting plate 31. The support of the screening assembly 1 and the support of the angle measurement assembly 2 pass through the bench assembly 3 to connect the lifting control assembly 4. The lifting control assembly 4 controls the first screening plate 11, the second screening plate 12 and the graphite angle measurement plate 21 to lift and lower respectively through the motion transmission of the support.

[0037] Specifically, the support member of the screening assembly 1 includes a first support shaft 13 and a second support shaft 14, and the support member of the angle measurement assembly 2 is a third support shaft 22. The first support shaft 13 and the second support shaft 14 are connected to the first screening plate 11 and the second screening plate 12, and the third support shaft 22 is connected to the graphite angle measurement plate 21. The first support shaft 13, the second support shaft 14 and the third support shaft 22 all pass through the stand assembly 3 and extend to the atmosphere region 200 and are connected to the lifting control assembly 4. The first screening plate 11, the second screening plate 12 and the graphite angle measurement plate 21 are connected and supported by the first support shaft 13, the second support shaft 14 and the third support shaft 22, so that the lifting control assembly 4 in the atmosphere region 200 can control the movement of the first screening plate 11, the second screening plate 12 and the graphite angle measurement plate 21 in the vacuum region 100.

[0038] Since the lifting control assembly 4 is a moving structure, in order to solve the dynamic sealing problem of the vacuum region 100, the beam control device further includes a differential sealing assembly 5, and the differential sealing assembly 5 is used to maintain the vacuum degree of the vacuum region 100. The differential sealing assembly 5 includes a vacuum pump disposed in the atmosphere region 200, and the vacuum pump can extract the gas in the vacuum region 100 to maintain the vacuum degree of the vacuum region 100 to meet the requirements of the ion implantation process.

[0039] The differential seal assembly 5 is provided with multiple groups, and the multiple groups of differential seal assemblies 5 are respectively connected to the first support shaft 13, the second support shaft 14 and the third support shaft 22, and are respectively used to solve the dynamic sealing problem of the first support shaft 13, the second support shaft 14 and the third support shaft 22 passing through the vacuum area 100 and the atmosphere area 200. The differential seal assembly 5 also includes a seal, which is used to seal the connection between the first support shaft 13, the second support shaft 14, the third support shaft 22 and the stand assembly 3.

[0040] Specifically, the differential sealing assembly 5 also includes an outer sleeve, one end of which is fixedly connected to the main mounting plate 31, and the first support shaft 13, the second support shaft 14 and the third support shaft 22 are respectively movably arranged in their corresponding outer sleeves. A small movable gap is left between the first support shaft 13, the second support shaft 14 and the third support shaft 22 and the outer sleeves. The seal can be at least one of a lip seal ring and an O-ring. The seal is arranged in the movable gap, which can ensure the sealing of the movable gap and will not affect the reciprocating lifting and lowering of the first support shaft 13, the second support shaft 14 and the third support shaft 22.

[0041] The lifting control component 4 has a variety of implementation structures. In one embodiment, the lifting control component 4 includes a lifting motor 41 and a ball screw. The lifting motor 41 is a rotating motor. The output end of the rotating motor is connected to the ball screw. The lifting motor 41 drives the ball screw to rotate. The ball screw is transmission-connected to the first support shaft 13 or the second support shaft 14, driving the first support shaft 13 or the second support shaft 14 to reciprocate, thereby driving the first screening plate 11 or the second screening plate 12 to reciprocate and lift.

[0042] Of course, as a transmission structure, in other embodiments, the lifting motor 41 can also drive the first screening plate 11 or the second screening plate 12 by using a gear rack transmission or other structures instead of a ball screw transmission.

[0043] In another embodiment, the lifting control assembly 4 includes a double-acting cylinder 42, and the piston rod of the double-acting cylinder 42 is connected to the third support shaft 22, thereby reciprocating the graphite angle measurement plate 21. The double-acting cylinder 42 can apply thrust and pull to the graphite angle measurement plate 21 to meet the displacement requirements of the graphite angle measurement plate 21 when switching between the measuring state and the non-measuring state.

[0044] Of course, in other embodiments, the lifting and lowering of the graphite angle measuring plate 21 can also be controlled by the lifting motor 41 and the ball screw, and the lifting and lowering of the first screening plate 11 or the second screening plate 12 can be controlled by the double-acting cylinder 42, which are all within the protection scope of the present application.

[0045] In order to adjust the position of the graphite angle measuring plate 21, the lifting control assembly 4 further includes a cylinder support plate 43, which is used to support the double-acting cylinder 42, and the cylinder support plate 43 is connected to the side mounting plate 32 of the stand assembly 3. One of the cylinder support plate 43 and the side mounting plate 32 is provided with a waist-shaped hole 431, and the other is provided with a connecting hole. The length of the waist-shaped hole 431 extends along the lifting direction of the graphite angle measuring plate 21, and the fastener passes through the waist-shaped hole 431 and the connecting hole so that the cylinder support plate 43 can be detachably connected to the stand assembly 3. By adjusting the relative position of the waist-shaped hole 431 and the fastener, the position of the double-acting cylinder 42 can be adjusted, so that when the graphite angle measuring plate 21 is installed, its position in the non-measuring state can be adjusted to match the height adjustment stroke requirements of the first screening plate 11 and the second screening plate 12.

[0046] Since the graphite plate generates heat during the ion bombardment process, the temperatures of the first screening plate 11, the second screening plate 12 and the graphite angle measurement plate 21 will rise significantly, especially the temperature of the graphite angle measurement plate 21 will rise faster. The beam control device also includes a water cooling component 6, which is used to cool the first screening plate 11 and / or the second screening plate 12 and / or the graphite angle measurement plate 21.

[0047] Specifically, the water cooling assembly 6 is provided with multiple groups, and the multiple groups of water cooling assemblies 6 are provided correspondingly to the first screening plate 11, the second screening plate 12, and the graphite angle measurement plate 21. The water cooling assembly 6 includes a water inlet pipe and a water outlet pipe, one end of which is connected to an external cooling device, and the first support shaft 13, the second support shaft 14, and the third support shaft 22 are provided with a hollow water cooling cavity inside, and the other end of the water inlet pipe and the water outlet pipe are connected to the water cooling cavity to form a circulating cooling, and the first screening plate 11, the second screening plate 12, and the graphite angle measurement plate 21 are cooled and lowered through the first support shaft 13, the second support shaft 14, and the third support shaft 22.

[0048] In order to detect and control the lifting and lowering stroke of the first screening plate 11 and / or the second screening plate 12 and / or the graphite angle measuring plate 21 to avoid overtravel of the lifting and lowering stroke, the lifting control component 4 also includes a stroke detection mechanism, which is used to detect the lifting and lowering stroke of the first screening plate 11 and / or the second screening plate 12 and / or the graphite angle measuring plate 21.

[0049] Specifically, three groups of stroke detection mechanisms are provided, which respectively correspond to the lifting strokes of the first screening plate 11, the second screening plate 12 and the graphite angle measurement plate 21 for detection. The stroke detection mechanism includes a photoelectric sensor and a sensor shielding plate. Since the strokes of the first screening plate 11 and the second screening plate 12 are determined by the ball screw, and the stroke of the graphite angle measurement plate 21 is determined by the piston rod of the double-acting cylinder 42, the sensor shielding plate can be set on the ball screw and the piston rod of the double-acting cylinder 42. The sensor shielding plate shields the light signal received by the photoelectric sensor, so that the photoelectric sensor can determine the position of the ball screw and the piston rod, and then determine whether the lifting of the first screening plate 11, the second screening plate 12 and the graphite angle measurement plate 21 exceeds the stroke, so as to improve the safety and reliability of the beam control device.

[0050] In one embodiment, the screening assembly 1 further includes a spare support tube 15, which passes through the stage assembly 3 and extends to the outside of the vacuum region 100 to connect to the lifting control assembly 4, and the spare support tube 15 can be detachably connected to the first screening plate 11 or the second screening plate 12 or the graphite angle measurement plate 21. When the first support shaft 13 or the second support shaft 14 or the third support shaft 22 fails, the corresponding first screening plate 11 or the second screening plate 12 or the graphite angle measurement plate 21 can be connected through the spare support tube 15 to ensure the continuous operation of the beam control device.

[0051] In one embodiment, the beam control device has a plurality of lifting driving members, which may be the lifting motor 41 or the double-acting cylinder 42 mentioned above. The plurality of lifting driving members are respectively used to control the lifting of the first screening plate 11, the second screening plate 12 and the graphite angle measurement plate 21. Among the plurality of projections formed by the plurality of lifting driving members in a horizontal plane perpendicular to the ion implantation direction, at least two projections in the horizontal plane perpendicular to the ion implantation direction have at least partial overlap. For example, Figure 3 As shown, it is a schematic diagram of a partial structure of the beam control device from above. The main mounting plate 31 in the figure is equivalent to a horizontal plane, the X direction is the ion implantation direction, and the Y direction is perpendicular to the ion implantation direction. The figure includes the projections of two double-acting cylinders 42 and the projections of two lifting motors 41. The two double-acting cylinders 42 are used to provide power for the graphite angle measurement plate 21 and the spare support tube 15 respectively, and the two lifting motors 41 are used to provide power for the first screening plate 11 and the second screening plate 12 respectively. Among them, the projections of the two double-acting cylinders 42 on the main mounting plate 31 are completely overlapped along the direction perpendicular to the ion implantation direction, and the overlap dimension is L1. The projections of the two lifting motors 41 on the main mounting plate 31 are partially overlapped along the direction perpendicular to the ion implantation direction, and the overlap dimension is L2. At the same time, the projections of the two double-acting cylinders 42 and the projection of one of the lifting motors 41 also have a partial overlap area (not marked in the figure). This arrangement makes the beam control device flat in the ion implantation direction, reduces the overall thickness of the beam control device (thickness direction, i.e., X direction), and is conducive to the miniaturization of the ion implantation equipment.

[0052] Finally, this embodiment also provides an ion implantation device, which includes the above-mentioned beam control device, and the ion implantation device also includes an ion generator. The ions generated by the ion generator enter the vacuum region 100 through the ion implantation window to perform an ion implantation process on the wafer. The beam control device adjusts the height position and area of ​​the ion implantation window by reciprocating the first screening plate 11 and the second screening plate 12 along the vertical ion implantation direction to adjust the ion implantation angle, and adapts the shape of the ion beam to the wafer size, thereby improving the process quality and versatility of the ion implantation device.

[0053] Obviously, the above embodiments of the present invention are merely examples for the purpose of clearly illustrating the present invention, and are not intended to limit the implementation methods of the present invention. For those skilled in the art, various obvious changes, readjustments and substitutions can be made without departing from the scope of protection of the present invention. It is not necessary and impossible to list all implementation methods here. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention shall be included in the scope of protection of the claims of the present invention.

Claims

1. A beam control device, characterized in that: The invention comprises a screening component (1) and an angle measurement component (2), wherein the screening component (1) comprises a first screening plate (11) and a second screening plate (12) arranged front and rear along an ion implantation direction, the first screening plate (11) is provided with a first screening port (111), the second screening plate (12) is provided with a second screening port (121), the first screening port (111) and the second screening port (121) at least partially overlap to form an ion implantation window, the first screening plate (11) and the second screening plate (121) can be respectively lifted and lowered reciprocatingly in a direction perpendicular to the ion implantation direction to adjust the height and / or area of ​​the ion implantation window, and the angle measurement component (2) comprises a graphite angle measurement plate (21) that can be lifted and lowered reciprocatingly in a direction perpendicular to the ion implantation direction, the graphite angle measurement plate (21) having a measuring state in which it is lifted to shield the ion implantation window, and a non-measuring state in which it avoids the ion implantation window.

2. The beam control device according to claim 1, characterized in that: The beam control device further comprises a stage assembly (3) and a lifting control assembly (4); the lifting control assembly (4) is capable of lifting the first screening plate (11), the second screening plate (12) and the graphite angle measurement plate (21) respectively; the lifting control assembly (4) and the first screening plate (11), the second screening plate (12) and the graphite angle measurement plate (21) are respectively arranged on both sides of the stage assembly (3); a support member of the screening assembly (1) and a support member of the angle measurement assembly (2) pass through the stage assembly (3) to connect to the lifting control assembly (4).

3. The beam control device according to claim 2, characterized in that: The beam control device further comprises a differential sealing component (5), wherein the differential sealing component (5) is used to dynamically seal a support component of the screening component (1) and a support component of the angle measurement component (2).

4. The beam control device according to claim 3, characterized in that: The support member of the screening component (1) comprises a first support shaft (13) and a second support shaft (14); the support member of the angle measuring component (2) is a third support shaft (22); the first support shaft (13) and the second support shaft (14) are respectively connected to the first screening plate (11) and the second screening plate (12); the third support shaft (22) is connected to the graphite angle measuring plate (21); the first support shaft (13), the second support shaft (14) and the third support shaft (22) all pass through the stand component (3) and extend to the other side of the stand component (3); the differential sealing component (5) is provided with a plurality of groups; the plurality of groups of the differential sealing components (5) are respectively connected to the first support shaft (13), the second support shaft (14) and the third support shaft (22); the differential sealing component (5) comprises a sealing member, and the sealing member is used to seal the connection between the first support shaft (13), the second support shaft (14), the third support shaft (22) and the stand component (3).

5. The beam control device according to claim 2, characterized in that: The lifting control assembly (4) comprises a lifting motor (41) and a screw rod, wherein an output end of the lifting motor (41) is connected to the screw rod, and the screw rod is drivingly connected to the first screening plate (11) or the second screening plate (12), so that the first screening plate (11) or the second screening plate (12) can be lifted and lowered reciprocatingly; and / or, The lifting control component (4) comprises a double-acting cylinder (42), and the double-acting cylinder (42) is drivingly connected to the graphite angle measurement plate (21) so as to enable the graphite angle measurement plate (21) to lift and lower in a reciprocating manner.

6. The beam control device according to claim 5, characterized in that: The lifting control assembly (4) further comprises a cylinder support plate (43), wherein the cylinder support plate (43) supports the double-acting cylinder (42), wherein one of the cylinder support plate (43) and the stand assembly (3) is provided with a waist-shaped hole (431), and the other is provided with a connecting hole, wherein the length of the waist-shaped hole (431) extends along the lifting direction of the graphite angle measuring plate (21), and a fastener passes through the waist-shaped hole (431) and the connecting hole so that the cylinder support plate (43) can be detachably connected to the stand assembly (3).

7. The beam control device according to claim 2, characterized in that: The beam control device further comprises a water cooling component (6), wherein the water cooling component (6) is used to cool the first screening plate (11) and / or the second screening plate (12) and / or the graphite angle measurement plate (21).

8. The beam control device according to claim 7, characterized in that: The water cooling assembly (6) is provided with a plurality of groups, and the plurality of groups of the water cooling assembly (6) are provided correspondingly to the first screening plate (11), the second screening plate (12), and the graphite angle measuring plate (21). The water cooling assembly (6) comprises a water inlet pipe and a water outlet pipe, and one end of the water inlet pipe and the water outlet pipe are both connected to an external cooling device. The screening assembly (1) comprises a first support shaft (13) and a second support shaft (14), and the angle measuring assembly (2) comprises a third support shaft (22), and the first support shaft (13) and the second support shaft (14) are connected to each other. The first screening plate (11) and the second screening plate (12) are connected to the graphite angle measuring plate (21); the first supporting shaft (13), the second supporting shaft (14) and the third supporting shaft (22) all pass through the stand assembly (3) and extend to the other side of the stand assembly (3); a hollow water cooling cavity is provided inside the first supporting shaft (13), the second supporting shaft (14) and the third supporting shaft (22); and the other ends of the water inlet pipe and the water outlet pipe are connected to the water cooling cavity.

9. The beam control device according to claim 2, characterized in that: The lifting control assembly (4) further comprises a stroke detection mechanism, wherein the stroke detection mechanism is used to detect the lifting stroke of the first screening plate (11) and / or the second screening plate (12) and / or the graphite angle measuring plate (21); and / or, The screening assembly (1) further comprises a spare support tube (15), wherein the spare support tube (15) passes through the stand assembly (3) and extends to the other side of the stand assembly (3) and is connected to the lifting control assembly (4); an end of the spare support tube (15) away from the lifting control assembly (4) can be detachably connected to the first screening plate (11) or the second screening plate (12) or the graphite angle measuring plate (21).

10. The beam control device according to any one of claims 1 to 9, characterized in that: The beam control device comprises a plurality of lifting drive members, wherein the plurality of lifting drive members are respectively used to control the lifting and lowering of the first screening plate (11), the second screening plate (12) and the graphite angle measurement plate (21); among a plurality of projections formed by the plurality of lifting drive members in a horizontal plane perpendicular to the ion injection direction, at least two of the projections in the horizontal plane perpendicular to the ion injection direction have at least partial overlap.

11. Ion implantation equipment, characterized in that It comprises a beam control device as described in any one of claims 1 to 10.

Images