Novel chip front silver-coated SIC-MOSFET structure
By setting grooves, hexagonal bumps and silver coatings on the front of the chip of the SIC-MOSFET, the problem of heat accumulation at the bottom is solved, the heat dissipation efficiency and reliability are improved, and the normal operation of the SIC-MOSFET is ensured.
Patent Information
- Application Number
- CN202420973786.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-05-08
- Publication Date
- 2025-01-07
- Estimated Expiration
- 2034-05-08
AI Technical Summary
The bottom contact surface of the SIC-MOSFET is prone to heat accumulation, resulting in overheating, which is not conducive to its normal operation.
A new SIC-MOSFET structure with silver-covered front of the chip was designed. The upper and lower walls of the main body were provided with multiple grooves and hexagonal protrusions, and covered with silver coating. The heat dissipation block was partially filled with silver particles to dissipate heat. The angle between the left and right side walls of the upper part of the block and the horizontal direction is 30° to increase the heat dissipation area and efficiency.
By increasing the heat dissipation area and using a silver coating of a good thermal conductive material, it effectively dissipates heat and avoids heat accumulation, improving the heat dissipation efficiency and reliability of SIC-MOSFETs to ensure its normal operation.
Smart Images
Figure CN222320246U_ABST
Abstract
Description
Technical Field
[0001] The utility model belongs to the technical field of SIC-MOSFET, and specifically relates to a novel SIC-MOSFET structure with silver coating on the front side of the chip. Background Art
[0002] Semiconductor technology has played a decisive role in the development of the power electronics industry. Among them, power semiconductor devices have always been considered a key component of power electronic devices. With the widespread application of power electronics technology in industries such as industry, medical care, transportation, and consumption, power semiconductor devices directly affect the cost and efficiency of these power electronic devices. SIC-MOSFET is a metal oxide semiconductor field effect transistor (MOSFET) based on silicon carbide (SiC) material. It has advantages such as higher operating temperature, higher electron mobility, and lower on-resistance than traditional silicon (Si) MOSFET, so it has a wide range of uses in high temperature, high frequency, and high power applications. MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a semiconductor device that is widely used for switching purposes and amplification of electronic signals in electronic devices. Due to its very small size, MOSFET can be both a core and an integrated circuit, and can be designed and manufactured in a single chip. MOSFET is a four-terminal device with source, gate, drain, and body terminals. The introduction of MOSFET devices has brought changes in the field of electronic switching.
[0003] Heat is easily accumulated on the bottom contact surface of the SIC-MOSFET, causing the SIC-MOSFET to overheat, which is not conducive to the normal operation of the SIC-MOSFET. Utility Model Content
[0004] In view of this, the utility model provides a novel SIC-MOSFET structure with silver-coated chip front side, aiming to solve the problem that heat is easily accumulated on the bottom contact surface of the SIC-MOSFET, causing the SIC-MOSFET to overheat and being detrimental to the normal operation of the SIC-MOSFET.
[0005] The utility model is achieved in this way:
[0006] The utility model provides a novel SIC-MOSFET structure with silver coating on the front side of the chip, wherein the structure comprises a main body, a heat sink and a heat conductive block; the main body is a square structure, the upper wall of the main body is provided with a plurality of grooves, and the convex blocks between the grooves are the heat sink; the cross section of the upper part of the heat sink is a trapezoid, and the cross section of the lower part is a square; the lower wall of the main body is provided with a plurality of grooves, and the cross section of the bottom surface of the groove is an isosceles trapezoid; the heat sink is used to increase the heat dissipation surface area; the left and right side walls of the main body are provided with hexagonal protrusions; the source, the gate and the drain are respectively arranged at the middle position of the left side wall, the upper side wall and the right side wall of the main body; the upper wall groove, the lower wall groove and the hexagonal protrusion surfaces of the left and right side walls of the main body are all covered with a silver coating; the height of the upper part of the heat sink is 1 / 2 of the total height of the heat sink.
[0007] The utility model provides a novel SIC-MOSFET structure with silver-coated front side of the chip, and the technical effect is as follows: by setting a plurality of grooves on the lower wall of the main body, the heat of the lower wall can be dissipated through the grooves, avoiding heat accumulation on the contact surface at the bottom of the main body, improving the heat dissipation efficiency, and thus facilitating the normal operation of the SIC-MOSFET.
[0008] By setting the cross section of the bottom surface of the groove to be an isosceles trapezoid, the heat dissipation area of the bottom surface of the main body can be increased, and more heat can be transferred out through the groove.
[0009] By arranging the left and right side walls of the main body with hexagonal protrusions, the surface areas of the left and right side walls of the main body are increased, and the heat in the main body can be dissipated more through the surfaces of the hexagonal protrusions, thereby improving the heat dissipation efficiency.
[0010] The upper wall groove, the lower wall groove and the hexagonal protrusion surfaces of the left and right side walls of the main body are all covered with a silver coating. Since silver is a good thermal conductive material with excellent thermal conductivity, it can effectively help the main body to dissipate heat and improve the performance and reliability of the SIC-MOSFET.
[0011] By setting the height of the upper part of the heat dissipation block to 1 / 2 of the total height of the heat dissipation block, the surface areas of the left and right side walls of the upper part of the heat dissipation block can be increased, thereby improving the heat dissipation efficiency of the heat dissipation block.
[0012] On the basis of the above technical solution, the SIC-MOSFET structure with a novel chip front covered with silver in the utility model can also be improved as follows:
[0013] Wherein, the left and right side walls of the upper part of the heat dissipation block are filled with silver particles.
[0014] The beneficial effect of adopting the above-mentioned improvement scheme is: by filling the left and right side walls of the upper part of the heat sink block with silver particles, the silver particles can form tiny bumps on the left and right side walls of the heat sink block, which is beneficial to improving the heat conduction efficiency.
[0015] Furthermore, the cross-section of the upper part of the heat dissipation block is an isosceles trapezoid.
[0016] Furthermore, the angle between the left and right side walls of the upper part of the heat dissipation block and the horizontal direction is 30°.
[0017] The beneficial effect of adopting the above-mentioned improvement scheme is: by setting the angle between the left and right side walls of the upper part of the heat sink and the horizontal direction to 30°, the left and right side walls of the heat sink extend to both sides at a larger angle, which can increase the spatial heat dissipation area of the left and right side walls of the heat sink, and improve the heat dissipation efficiency of the heat sink.
[0018] Furthermore, the height of the heat dissipation block is 1.5 cm.
[0019] Furthermore, the thickness of the hexagonal protrusion is 1 cm.
[0020] Furthermore, the depth of the groove on the lower wall of the main body is 1.5 cm.
[0021] Furthermore, there are multiple hexagonal protrusions on the left and right side walls of the main body.
[0022] Furthermore, the width of the groove on the lower wall of the main body is 2 cm.
[0023] The beneficial effects of adopting the above-mentioned improvement scheme are: by setting the width of the groove on the lower wall of the main body to 2 cm, the depth and width of the groove on the lower wall of the main body are increased, so that the heat accumulated on the bottom surface of the main body can be better dissipated, and at the same time, multiple groove structures are set, and spacer blocks are formed between adjacent groove structures to maintain the stability of the main body.
[0024] Furthermore, the hexagonal protrusions on the left and right side walls of the main body are evenly distributed.
[0025] Compared with the prior art, the utility model provides a novel SIC-MOSFET structure with silver-coated chip front side, which has the beneficial effect that: by setting a plurality of grooves on the lower wall of the main body, the heat of the lower wall can be dissipated through the grooves, avoiding heat accumulation on the contact surface at the bottom of the main body, improving the heat dissipation efficiency, and thus facilitating the normal operation of the SIC-MOSFET.
[0026] By setting the cross section of the bottom surface of the groove to be an isosceles trapezoid, the heat dissipation area of the bottom surface of the main body can be increased, and more heat can be transferred out through the groove.
[0027] By arranging the left and right side walls of the main body with hexagonal protrusions, the surface areas of the left and right side walls of the main body are increased, and the heat in the main body can be dissipated more through the surfaces of the hexagonal protrusions, thereby improving the heat dissipation efficiency.
[0028] The upper wall groove, the lower wall groove and the hexagonal protrusion surfaces of the left and right side walls of the main body are all covered with a silver coating. Since silver is a good thermal conductive material with excellent thermal conductivity, it can effectively help the main body to dissipate heat and improve the performance and reliability of the SIC-MOSFET.
[0029] By setting the height of the upper part of the heat dissipation block to 1 / 2 of the total height of the heat dissipation block, the surface areas of the left and right side walls of the upper part of the heat dissipation block can be increased, thereby improving the heat dissipation efficiency of the heat dissipation block.
[0030] By filling the left and right side walls of the upper part of the heat sink block with silver particles, the silver particles can form tiny concave and convex surfaces on the left and right side walls of the heat sink block, which is beneficial to improving the heat conduction efficiency.
[0031] By setting the angle between the left and right side walls of the upper part of the heat sink and the horizontal direction to 30°, the left and right side walls of the heat sink extend to a larger angle, which can increase the spatial heat dissipation area of the left and right side walls of the heat sink and improve the heat dissipation efficiency of the heat sink.
[0032] By setting the width of the groove on the lower wall of the main body to 2 cm, the depth and width of the groove on the lower wall of the main body are increased, so that the heat accumulated on the bottom surface of the main body can be better dissipated. At the same time, multiple groove structures are set, and spacer blocks are formed between adjacent groove structures to maintain the stability of the main body.
[0033] The invention can solve the problem that heat is easily accumulated on the bottom contact surface of the SIC-MOSFET, which causes the SIC-MOSFET to overheat and is not conducive to the normal operation of the SIC-MOSFET. BRIEF DESCRIPTION OF THE DRAWINGS
[0034] In order to more clearly illustrate the technical solutions of the embodiments of the utility model, the drawings required for use in the description of the embodiments of the utility model will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.
[0035] Figure 1 This is a front view of a new type of SIC-MOSFET structure with silver coating on the front of the chip;
[0036] Figure 2 A side view of a new type of SIC-MOSFET structure with silver coating on the front of the chip;
[0037] In the accompanying drawings, the components represented by the reference numerals are listed as follows:
[0038] 1. Main body; 2. Heat sink; 3. Heat conduction block. DETAILED DESCRIPTION
[0039] In order to make the purpose, technical solution and advantages of the implementation mode of the present invention clearer, the technical solution in the implementation mode of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the implementation mode of the present invention.
[0040] like Figure 1-2 As shown, it is a structural schematic diagram of a novel SIC-MOSFET structure with silver-coated front of the chip provided by the utility model. In this device, there are a main body 1, a heat sink 2, and a heat conductive block 3; the main body 1 is a square structure, and the upper wall of the main body 1 is provided with a plurality of grooves, and the convex blocks between the grooves are the heat sink 2; the cross section of the upper part of the heat sink 2 is a trapezoid, and the cross section of the lower part is a square; the lower wall of the main body 1 is provided with a plurality of grooves, and the cross section of the bottom surface of the groove is an isosceles trapezoid; the heat sink 2 is used to increase the heat dissipation surface area; the left and right side walls of the main body 1 are provided with hexagonal protrusions; the source, the gate and the drain are respectively arranged at the middle position of the left side wall, the upper side wall and the right side wall of the main body 1; the upper wall groove, the lower wall groove and the hexagonal protrusion surfaces of the left and right side walls of the main body 1 are all covered with a silver coating; the height of the upper part of the heat sink 2 is 1 / 2 of the total height of the heat sink 2.
[0041] A plurality of grooves are provided at the bottom of the main body 1 so that the heat accumulated at the bottom of the main body 1 can be dissipated outward through the grooves. Meanwhile, a silver coating is provided on the bottom surface of the grooves on the lower wall of the main body 1 so that the heat can be better conducted out, thereby reducing the heat at the bottom of the main body 1 and ensuring the normal operation of the SIC-MOSFET.
[0042] Among them, in the above technical solution, the left and right side walls of the upper part of the heat dissipation block 2 are filled with silver particles.
[0043] Furthermore, in the above technical solution, the cross-section of the upper part of the heat dissipation block 2 is an isosceles trapezoid.
[0044] Furthermore, in the above technical solution, the angle between the left and right side walls of the upper part of the heat dissipation block 2 and the horizontal direction is 30°.
[0045] Furthermore, in the above technical solution, the height of the heat dissipation block 2 is 1.5 cm.
[0046] Furthermore, in the above technical solution, the thickness of the hexagonal protrusion is 1 cm.
[0047] Furthermore, in the above technical solution, the depth of the groove on the lower wall of the main body 1 is 1.5 cm.
[0048] Furthermore, in the above technical solution, there are multiple hexagonal protrusions on the left and right side walls of the main body 1.
[0049] Furthermore, in the above technical solution, the width of the groove on the lower wall of the main body 1 is 2 cm.
[0050] Furthermore, in the above technical solution, the hexagonal protrusions on the left and right side walls of the main body 1 are evenly distributed.
[0051] Specifically, the principle of the utility model is: a plurality of grooves are opened at the bottom of the main body 1, so that the heat accumulated at the bottom of the main body 1 is dissipated outward through the grooves, and at the same time, a silver coating is covered on the bottom surface of the grooves on the lower wall of the main body 1, so that the heat is better conducted out, the heat at the bottom of the main body 1 is reduced, and the normal operation of the SIC-MOSFET is ensured.
Claims
1. A novel SIC-MOSFET structure with silver coating on the front side of the chip, characterized in that: The invention comprises a main body (1), a heat sink (2) and a heat conducting block (3); the main body (1) is a square structure, the upper wall of the main body (1) is provided with a plurality of grooves, and the protrusions between the grooves are the heat sink (2); the cross section of the upper part of the heat sink (2) is a trapezoid, and the cross section of the lower part is a square; the lower wall of the main body (1) is provided with a plurality of grooves, and the cross section of the bottom surface of the grooves is an isosceles trapezoid; the heat sink (2) is used to increase the heat dissipation surface area; the left and right side walls of the main body (1) are both provided with hexagonal protrusions; the source, the gate and the drain are respectively provided at the middle position of the left side wall, the upper side wall and the right side wall of the main body (1); the upper wall groove, the lower wall groove and the hexagonal protrusion surfaces of the left and right side walls of the main body (1) are all covered with a silver coating; the height of the upper part of the heat sink (2) is 1 / 2 of the total height of the heat sink (2).
2. The novel SIC-MOSFET structure with silver coating on the front side of the chip according to claim 1 is characterized in that: The left and right side walls of the upper part of the heat dissipation block (2) are filled with silver particles.
3. The novel SIC-MOSFET structure with silver coating on the front side of the chip according to claim 2 is characterized in that: The cross section of the upper part of the heat dissipation block (2) is an isosceles trapezoid.
4. The novel SIC-MOSFET structure with silver coating on the front side of the chip according to claim 3 is characterized in that: The angle between the left and right side walls of the upper part of the heat dissipation block (2) and the horizontal direction is 30°.
5. The novel SIC-MOSFET structure with silver coating on the front side of the chip according to claim 4 is characterized in that: The height of the heat dissipation block (2) is 1.5 cm.
6. The novel SIC-MOSFET structure with silver coating on the front side of the chip according to claim 5, characterized in that: The thickness of the hexagonal protrusion is 1 cm.
7. The novel SIC-MOSFET structure with silver coating on the front side of the chip according to claim 6 is characterized in that: The depth of the groove on the lower wall of the main body (1) is 1.5 cm.
8. The novel SIC-MOSFET structure with silver coating on the front side of the chip according to claim 7, characterized in that: The main body (1) has a plurality of hexagonal protrusions on the left and right side walls.
9. The novel SIC-MOSFET structure with silver coating on the front side of the chip according to claim 8, characterized in that: The width of the groove on the lower wall of the main body (1) is 2 cm.
10. The novel SIC-MOSFET structure with silver coating on the front side of the chip according to claim 9, characterized in that: The hexagonal protrusions on the left and right side walls of the main body (1) are evenly distributed.