Array P-GaN island terminal structure for GaN-SBD
By designing multi-shaped heat dissipation fins and optimizing connection methods in GaN-SBD, the problem of high-temperature damage to the terminal structure of P-GaN island is solved, and a more efficient heat dissipation effect is achieved, which is suitable for high-power density applications.
Patent Information
- Application Number
- CN202420974441.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-05-08
- Publication Date
- 2025-01-10
- Estimated Expiration
- 2034-05-08
AI Technical Summary
The P-GaN island terminal structure in GaN-SBD is due to the high temperature problem caused by the electric field distribution, resulting in structural damage, and the prior art is difficult to effectively solve the heat dissipation problem.
A termination structure of array P-GaN islands for GaN-SBD was designed. By fixedly connecting the P-GaN islands to the heat conduction path, multiple heat dissipation fins are distributed on the surface of the heat conduction path, and the fins are arc-shaped and sine-shaped. Waveform, parabolic, exponential curved or spiral, made of aluminum or copper, and the P-GaN island is connected to the heat conduction path through welding, optimize the shape and arrangement of the heat dissipation fins to enhance heat dissipation efficiency.
It effectively increases the heat dissipation area, guides the airflow to form a vortex, optimizes the heat dissipation area and airflow distribution, improves the heat dissipation efficiency, and enables the equipment to work better in high-temperature environments and extends its service life.
Smart Images
Figure CN222338276U_ABST
Abstract
Description
Technical Field
[0001] The utility model belongs to the technical field of chip packaging, and in particular relates to an array P-GaN island terminal structure for GaN-SBD. Background Art
[0002] An array P-GaN for GaN-SBD (gallium nitride Schottky barrier diode) refers to a P-type gallium nitride (P-GaN) array with a specific structure used in the gallium nitride Schottky barrier diode (GaN-SBD).
[0003] The field plate or field stop structure is a structure commonly used in power electronic devices, especially in high-voltage semiconductor devices such as power MOSFET, IGBT (insulated gate bipolar transistor) and SiC (silicon carbide) devices.
[0004] The island terminal structure is usually located in the terminal region of the device, and these regions may generate a lot of heat due to the electric field distribution, which may cause damage to the P-GaN island terminal structure. Utility Model Content
[0005] In view of this, the utility model provides an array P-GaN island terminal structure for GaN-SBD, which can solve the problem of heat dissipation of the P-GaN island terminal structure and avoid damage to the P-GaN island terminal structure due to excessive temperature.
[0006] The utility model is achieved in this way:
[0007] The utility model provides an array P-GaN island terminal structure for GaN-SBD, comprising a P-GaN island, a heat conduction path, and a heat sink fin, wherein the P-GaN island is fixedly connected to the heat conduction path, the heat conduction path is fixedly connected to the heat sink fin, the heat sink fins have a plurality of fins, which are vertically distributed on the surface of the heat conduction path, the heat sink fins comprise a first heat sink and a second heat sink, the bottom of the first heat sink is fixedly connected to the heat conduction path, the top of the first heat sink is fixedly connected to the second heat sink, and the cross section of the first heat sink is an arc.
[0008] On the basis of the above technical solution, the array P-GaN island terminal structure for GaN-SBD of the utility model can also be improved as follows:
[0009] Wherein, the height of the first heat sink is equal to 3 to 5 times the distance between two adjacent heat sink fins.
[0010] Furthermore, the cross section of the first heat sink is a sinusoidal waveform.
[0011] The beneficial effect of adopting the above-mentioned improvement scheme is: utilizing the periodic change of the sine function, the height of the fins is designed to fluctuate in the form of a sine wave; this design not only increases the heat dissipation area, but also guides the airflow to form vortices between the fins, thereby enhancing the convection heat dissipation effect.
[0012] Furthermore, the period of the waveform is equal to the height of the first heat sink.
[0013] Furthermore, the cross section of the first heat sink is parabolic.
[0014] The beneficial effects of adopting the above-mentioned improvement scheme are as follows: the parabola shape has the characteristics of symmetry and smooth transition, and is suitable for designing heat dissipation fins; by adjusting the opening direction and vertex position of the parabola, the heat dissipation area and airflow distribution can be optimized.
[0015] Furthermore, the cross section of the first heat sink is in the shape of an exponential curve.
[0016] The beneficial effect of adopting the above-mentioned improvement scheme is that the exponential function can describe a gradually increasing trend. By utilizing this characteristic, the height of the fins can be designed to gradually increase from the bottom to the top; this design helps to form stronger convection at the top of the fins and improve the heat dissipation efficiency.
[0017] Furthermore, a projection of the first heat sink portion of the heat sink fin on the heat conduction path overlaps with a bottom of the first heat sink of an adjacent heat sink fin.
[0018] Furthermore, the cross section of the first heat sink is in a spiral function shape.
[0019] The spiral shape is continuous and rotatable, and can be used to design fins with unique heat dissipation effects; spiral fins can guide airflow along a spiral path, increasing the heat dissipation area and airflow speed.
[0020] Furthermore, the heat dissipation fins are made of aluminum or copper.
[0021] Furthermore, the P-GaN island and the heat conduction path are connected together by welding.
[0022] Compared with the prior art, the beneficial effects of the array P-GaN island terminal structure for GaN-SBD provided by the utility model are:
[0023] Increase heat dissipation area: By designing the structure of the heat dissipation fins, the heat dissipation area is effectively increased and the heat dissipation efficiency is improved;
[0024] Guiding airflow to form vortices: Using sine wave-shaped heat sink fins can guide airflow to form vortices between the fins, further enhancing the convection heat dissipation effect;
[0025] Optimize heat dissipation area and airflow distribution: Use heat dissipation fins in parabolic, exponential or spiral shapes to optimize heat dissipation area and airflow distribution, and improve heat dissipation efficiency;
[0026] Improve heat dissipation efficiency: Through the above improvement scheme, the heat dissipation efficiency can be improved, so that the equipment can work better in high temperature environment and extend its service life;
[0027] Optimize material selection and connection methods: Choose aluminum or copper as the material of the heat sink fins, and connect the P-GaN island to the heat conduction path by welding, which can improve heat dissipation efficiency and ensure a stable and reliable connection.
[0028] In summary, these improvement schemes can effectively improve the heat dissipation performance of the array P-GaN island terminal structure of GaN-SBD, making it perform better in high power density applications. BRIEF DESCRIPTION OF THE DRAWINGS
[0029] In order to more clearly illustrate the technical solutions of the embodiments of the utility model, the drawings required for use in the description of the embodiments of the utility model will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.
[0030] Figure 1 A schematic diagram of an array P-GaN island terminal structure for GaN-SBD;
[0031] In the accompanying drawings, the components represented by the reference numerals are listed as follows:
[0032] 1. P-GaN island; 2. heat conduction path; 3. heat sink fins; 31. first heat sink; 32. second heat sink. DETAILED DESCRIPTION
[0033] In order to make the purpose, technical solution and advantages of the implementation mode of the present invention clearer, the technical solution in the implementation mode of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the implementation mode of the present invention.
[0034] Embodiment 1
[0035] like Figure 1As shown, it is a first embodiment of an array P-GaN island terminal structure for GaN-SBD provided by the utility model. In this embodiment, it includes a P-GaN island 1, a heat conduction path 2, and a heat sink fin 3, wherein the P-GaN island 1 is fixedly connected to the heat conduction path 2, the heat conduction path 2 is fixedly connected to the heat sink fin 3, there are multiple heat sink fins 3, which are vertically distributed on the surface of the heat conduction path 2, the heat sink fin 3 includes a first heat sink 31 and a second heat sink 32, the bottom of the first heat sink 31 is fixedly connected to the heat conduction path 2, the top of the first heat sink 31 is fixedly connected to the second heat sink 32, and the cross-section of the first heat sink 31 is arc-shaped.
[0036] Wherein, in the above technical solution, the height of the first heat sink 31 is equal to 3 to 5 times the distance between two adjacent heat sink fins 3 .
[0037] Furthermore, in the above technical solution, the cross section of the first heat sink 31 is a sinusoidal waveform.
[0038] Furthermore, in the above technical solution, the period of the waveform is equal to the height of the first heat sink 31 .
[0039] Furthermore, in the above technical solution, the heat dissipation fins 3 are made of aluminum or copper.
[0040] Furthermore, in the above technical solution, the P-GaN island 1 and the heat conduction path 2 are connected together by welding.
[0041] Embodiment 2
[0042] like Figure 1 As shown, it is a second embodiment of an array P-GaN island terminal structure for GaN-SBD provided by the utility model. In this embodiment, it includes a P-GaN island 1, a heat conduction path 2, and a heat sink fin 3, wherein the P-GaN island 1 is fixedly connected to the heat conduction path 2, the heat conduction path 2 is fixedly connected to the heat sink fin 3, there are multiple heat sink fins 3, which are vertically distributed on the surface of the heat conduction path 2, the heat sink fin 3 includes a first heat sink 31 and a second heat sink 32, the bottom of the first heat sink 31 is fixedly connected to the heat conduction path 2, the top of the first heat sink 31 is fixedly connected to the second heat sink 32, and the cross-section of the first heat sink 31 is arc-shaped.
[0043] Wherein, in the above technical solution, the height of the first heat sink 31 is equal to 3 to 5 times the distance between two adjacent heat sink fins 3 .
[0044] Furthermore, in the above technical solution, the cross section of the first heat sink 31 is in the shape of an exponential curve.
[0045] Furthermore, in the above technical solution, the projection of the first heat sink 31 portion of the heat sink fin 3 on the heat conduction path 2 overlaps with the bottom of the first heat sink 31 of the adjacent heat sink fin 3 .
[0046] Furthermore, in the above technical solution, the heat dissipation fins 3 are made of aluminum or copper.
[0047] Furthermore, in the above technical solution, the P-GaN island 1 and the heat conduction path 2 are connected together by welding.
[0048] Embodiment 3
[0049] like Figure 1 As shown, it is a third embodiment of an array P-GaN island terminal structure for GaN-SBD provided by the utility model. In this embodiment, it includes a P-GaN island 1, a heat conduction path 2, and a heat sink fin 3, wherein the P-GaN island 1 is fixedly connected to the heat conduction path 2, the heat conduction path 2 is fixedly connected to the heat sink fin 3, there are multiple heat sink fins 3, which are vertically distributed on the surface of the heat conduction path 2, the heat sink fin 3 includes a first heat sink 31 and a second heat sink 32, the bottom of the first heat sink 31 is fixedly connected to the heat conduction path 2, the top of the first heat sink 31 is fixedly connected to the second heat sink 32, and the cross-section of the first heat sink 31 is arc-shaped.
[0050] Wherein, in the above technical solution, the height of the first heat sink 31 is equal to 3 to 5 times the distance between two adjacent heat sink fins 3 .
[0051] Furthermore, in the above technical solution, the cross section of the first heat sink 31 is parabolic.
[0052] Furthermore, in the above technical solution, the heat dissipation fins 3 are made of aluminum or copper.
[0053] Furthermore, in the above technical solution, the P-GaN island 1 and the heat conduction path 2 are connected together by welding.
[0054] Embodiment 4
[0055] like Figure 1 As shown, it is a fourth embodiment of an array P-GaN island terminal structure for GaN-SBD provided by the utility model. In this embodiment, it includes a P-GaN island 1, a heat conduction path 2, and a heat sink fin 3, wherein the P-GaN island 1 is fixedly connected to the heat conduction path 2, the heat conduction path 2 is fixedly connected to the heat sink fin 3, there are multiple heat sink fins 3, which are vertically distributed on the surface of the heat conduction path 2, the heat sink fin 3 includes a first heat sink 31 and a second heat sink 32, the bottom of the first heat sink 31 is fixedly connected to the heat conduction path 2, the top of the first heat sink 31 is fixedly connected to the second heat sink 32, and the cross-section of the first heat sink 31 is arc-shaped.
[0056] Wherein, in the above technical solution, the height of the first heat sink 31 is equal to 3 to 5 times the distance between two adjacent heat sink fins 3 .
[0057] Furthermore, in the above technical solution, the cross section of the first heat sink 31 is in the shape of a spiral function.
[0058] Furthermore, in the above technical solution, the heat dissipation fins 3 are made of aluminum or copper.
[0059] Furthermore, in the above technical solution, the P-GaN island 1 and the heat conduction path 2 are connected together by welding.
[0060] When in use, the P-GaN island 1 generates heat and transfers the generated heat to the heat sink fins 3 through the heat conduction path 2. The arc-shaped heat sink fins 3 increase the air volume around the heat sink fins 3, thereby taking away the heat on the heat sink fins 3.
[0061] Specifically, the principle of the utility model is to improve the heat dissipation efficiency by optimizing the structure and arrangement of the heat dissipation fins. Specifically, by interconnecting the P-GaN island, the heat conduction path and the heat dissipation fins, and designing the shape, height and arrangement of the heat dissipation fins, the heat dissipation area is increased, the airflow is guided to form vortices, and the convection heat dissipation effect is optimized. Heat dissipation fins of different shapes and arrangements can provide different heat dissipation effects, such as increasing the heat dissipation area, improving airflow, and improving convection efficiency, thereby effectively improving the heat dissipation performance of GaN-SBD.
Claims
1. An array P-GaN island terminal structure for GaN-SBD, comprising a P-GaN island (1), a heat conduction path (2), and a heat sink fin (3), characterized in that: The P-GaN island (1) is fixedly connected to the heat conduction path (2), and the heat conduction path (2) is fixedly connected to the heat sink fin (3). The heat sink fin (3) comprises a plurality of fins, which are vertically distributed on the surface of the heat conduction path (2). The heat sink fin (3) comprises a first heat sink (31) and a second heat sink (32). The bottom of the first heat sink (31) is fixedly connected to the heat conduction path (2), and the top of the first heat sink (31) is fixedly connected to the second heat sink (32). The cross section of the first heat sink (31) is arc-shaped.
2. The array P-GaN island terminal structure for GaN-SBD according to claim 1, characterized in that: The height of the first heat sink (31) is equal to 3 to 5 times the distance between two adjacent heat sink fins (3).
3. The array P-GaN island terminal structure for GaN-SBD according to claim 2, characterized in that: The cross section of the first heat sink (31) is a sinusoidal waveform.
4. The array P-GaN island terminal structure for GaN-SBD according to claim 3, characterized in that: The period of the sinusoidal waveform is equal to the height of the first heat sink (31).
5. The array P-GaN island terminal structure for GaN-SBD according to claim 4, characterized in that: The cross section of the first heat sink (31) is parabolic.
6. The array P-GaN island terminal structure for GaN-SBD according to claim 5, characterized in that: The cross section of the first heat sink (31) is in the shape of an exponential curve.
7. The array P-GaN island terminal structure for GaN-SBD according to claim 6, characterized in that: The projection of a first heat sink (31) portion of the heat sink fin (3) on the heat conduction path (2) overlaps with the bottom of the first heat sink (31) of an adjacent heat sink fin (3).
8. The array P-GaN island terminal structure for GaN-SBD according to claim 7, characterized in that: The cross section of the first heat sink (31) is in the shape of a spiral function.
9. The array P-GaN island terminal structure for GaN-SBD according to claim 8, characterized in that: The heat dissipation fins (3) are made of aluminum or copper.
10. The array P-GaN island terminal structure for GaN-SBD according to claim 9, characterized in that: The P-GaN island (1) and the heat conduction path (2) are connected together by welding.