Single crystal furnace silicon core annealing device

Abstract

The utility model relates to the technical field of single crystal furnace silicon cores, and discloses a single crystal furnace silicon core annealing device. The single crystal furnace silicon core annealing device comprises a main body and a placement frame, a heating furnace is coupled in the main body, an annealing frame is slidably connected in the heating furnace, one side of the annealing frame is fixedly connected with the placement frame, a first motor is fixedly connected in the main body, a threaded rod is arranged in the middle of the first motor, and the threaded rod is in external threaded connection with a threaded sleeve; the threaded sleeve is in shaft connection with the heating furnace, one end of the threaded sleeve is in shaft connection with the annealing frame, and the first motor drives the threaded rod to rotate so as to push the threaded sleeve and the annealing frame to move outwards. Through the design, the high-temperature silicon core is prevented from being manually taken out, the scalding risk is reduced, and the safety of the device is improved. The heater at the bottom of the placing rack ensures that the temperature of the silicon core is not rapidly reduced in the annealing process, thereby reducing the damage of the silicon core and improving the yield.

Description

Technical Field

[0001] The utility model relates to the technical field of single crystal furnace silicon cores, in particular to a single crystal furnace silicon core annealing device. Background Art

[0002] As the market demand for single crystals continues to grow, the requirements for the quality of single crystal silicon rods are increasing. As the dominant method for preparing single crystals, the Czochralski single crystal manufacturing method gradually transforms the interstitial oxygen in silicon into oxygen donors during the cooling process, forming a boron-oxygen complex with boron. This has a serious impact on the resistivity of the silicon rod and even causes inversion. Although general single crystal annealing furnaces can convert oxygen donors into interstitial oxygen states, they need to be reheated, which consumes a lot of energy and has become the main shortcoming of the existing technology: the oxygen inside the Czochralski single crystal silicon rod exists in the form of oxygen donors, resulting in uneven resistivity distribution, especially the head resistivity is too high or even inversion. Ordinary annealing furnaces need to raise the silicon rod from low temperature to about 700°C for annealing, and this process consumes a lot of energy.

[0003] Under normal circumstances, annealing is mainly performed on single crystal silicon wafers after slicing of single crystal silicon rods, and this process is carried out in a special annealing furnace. After annealing, some silicon wafers may be warped or oxidized. For the annealing of single crystal silicon rods, it is mainly to use a separate annealing furnace to heat and anneal the entire rod after it comes out of the furnace. It should be noted that the temperature and duration required for annealing of crystal rods of different specifications are different, and during the annealing process, the heating area is not exactly the same in different time periods. Utility Model Content

[0004] The utility model aims to provide a single crystal furnace silicon core annealing device to solve the problems raised in the above background technology.

[0005] In order to solve the above technical problems, the utility model provides the following technical solutions: a single crystal furnace silicon core annealing device, comprising a main body and a placement rack, the main body is axially connected to a heating furnace, the heating furnace is slidably connected to the annealing rack, one side of the annealing rack is fixedly connected to the placement rack, the main body is fixedly connected to a first motor, a threaded rod is provided in the middle of the first motor, the threaded rod is externally threaded and connected to a threaded sleeve, the threaded sleeve is axially connected to the heating furnace, and one end of the threaded sleeve is axially connected to the annealing rack.

[0006] Preferably, a second motor is fixedly connected inside the main body, a gear is provided in the middle of the second motor, and the gear is meshedly connected to a gear ring.

[0007] Preferably, the gear ring is fixedly connected to one end of the heating furnace, and a plurality of heating tubes are installed in the heating furnace.

[0008] Preferably, a plurality of heaters are fixedly connected to the bottom end of the placement rack.

[0009] Preferably, one end of the placement rack is fixedly connected to the box door.

[0010] Preferably, the surface of the placement rack is coated with an anti-slip coating.

[0011] Compared with the prior art, the beneficial effects achieved by the utility model are:

[0012] First, the utility model can anneal silicon crystals by setting up an annealing rack and a heater. The first motor drives the threaded rod to rotate, thereby pushing the threaded sleeve and the annealing rack to move outward. This design avoids manual removal of high-temperature silicon cores, reduces the risk of scalding, and improves the safety of the device. The heater at the bottom of the rack ensures that the temperature of the silicon core does not drop rapidly during the annealing process, thereby reducing damage to the silicon core and improving the yield rate.

[0013] Second, the utility model can evenly heat the silicon core by setting up a second motor and a heating furnace. The second motor drives the gear to rotate, and the gear rotation and meshing drive the ring gear to rotate, and the ring gear rotation drives the heating furnace to rotate, so that the heating furnace rotates to heat the silicon core, avoiding uneven heating of the silicon core due to uneven internal temperature, thereby affecting the silicon crystal yield. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 It is a three-dimensional diagram of the utility model;

[0015] Figure 2 It is a cross-sectional view of the utility model;

[0016] Figure 3 It is a schematic diagram of the internal structure of the heating furnace of the present utility model.

[0017] Figure 4 It is a structural schematic diagram of a heater connection placement rack of the utility model.

[0018] Among them: 1. main body; 2. heating furnace; 3. box door; 4. annealing rack; 5. placement rack; 6. heater; 7. first motor; 8. threaded rod; 9. threaded sleeve; 10. second motor; 11. gear; 12. gear ring. DETAILED DESCRIPTION

[0019] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0020] See also Figure 1-4A single crystal furnace silicon core annealing device comprises a main body 1 and a placement rack 5. The main body 1 is axially connected to a heating furnace 2, and the heating furnace 2 is slidably connected to an annealing rack 4. One side of the annealing rack 4 is fixedly connected to the placement rack 5. The main body 1 is fixedly connected to a first motor 7. A threaded rod 8 is arranged in the middle of the first motor 7. The threaded rod 8 is externally threadedly connected to a threaded sleeve 9. The threaded sleeve 9 is axially connected to the heating furnace 2. One end of the threaded sleeve 9 is axially connected to the annealing rack 4. The first motor 7 drives the threaded rod 8 to rotate, and the threaded sleeve 9 is pushed outward by the rotation of the threaded rod 8. The outward movement of the threaded sleeve 9 pushes the annealing rack 4 to move outward. The placement rack 5 and the silicon core are driven to move outward by the annealing rack 4, thereby avoiding the silicon core being taken out by manpower, reducing the probability of workers being scalded by the high-temperature silicon core, and further improving the safety of the device.

[0021] A second motor 10 is fixedly connected inside the main body 1, and a gear 11 is provided in the middle of the second motor 10. The gear 11 is meshed with a ring gear 12. The second motor 10 drives the gear 11 to rotate, and the ring gear 12 is driven to rotate by the rotation and meshing of the gear 11. The heating furnace 2 is driven to rotate by the rotation of the ring gear 12, so that the heating furnace 2 rotates to heat the silicon core, thereby avoiding uneven heating of the silicon core due to uneven internal temperature, thereby affecting the silicon crystal yield.

[0022] The gear ring 12 is fixedly connected to one end of the heating furnace 2. A plurality of heating tubes are installed in the heating furnace 2. The heating furnace 2 rotates to heat the silicon core, thereby avoiding uneven heating of the silicon core due to uneven internal temperature, thereby affecting the yield of silicon crystals.

[0023] A plurality of heaters 6 are fixedly connected to the bottom of the placement rack 5 to heat the silicon crystal through the heater 6 at the bottom of the placement rack 5 to avoid a rapid drop in the temperature of the silicon core during the annealing process, thereby improving the yield of the silicon core during the annealing process.

[0024] One end of the placement rack 5 is fixedly connected to the box door 3, and the box door 3 is used to isolate the internal and external temperatures.

[0025] The surface of the placement rack 5 is coated with an anti-skid coating, which prevents the silicon crystal from moving randomly due to the shaking of the device.

[0026] When in use, the second motor 10 drives the gear 11 to rotate, and the gear 11 rotates and engages to drive the ring gear 12 to rotate, and the ring gear 12 rotates to drive the heating furnace 2 to rotate, so that the heating furnace 2 rotates to heat the silicon core, so as to avoid uneven heating of the silicon core due to uneven internal temperature, thereby affecting the yield of silicon crystal. When annealing is required, the first motor 7 drives the threaded rod 8 to rotate, and the threaded rod 8 rotates to push the threaded sleeve 9 to move outward, and the outward movement of the threaded sleeve 9 pushes the annealing rack 4 to move outward, and the placement rack 5 and the silicon core are driven to move outward by the annealing rack 4, so as to avoid manpower to take out the silicon core, reduce the probability of workers being scalded by high-temperature silicon core, and further improve the safety of the device. The silicon crystal is heated by the bottom heater 6 of the placement rack 5, so as to avoid the rapid drop in the temperature of the silicon core during the annealing process, which causes damage to the silicon core, thereby improving the yield of the silicon core during the annealing process.

[0027] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device.

[0028] Finally, it should be noted that the above description is only a preferred embodiment of the utility model and is not intended to limit the utility model. Although the utility model is described in detail with reference to the above embodiments, those skilled in the art can still modify the technical solutions recorded in the above embodiments or replace some of the technical features therein by equivalents. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the utility model shall be included in the protection scope of the utility model.

Claims

1. A single crystal furnace silicon core annealing device, comprising a main body (1) and a placement rack (5), characterized in that: The main body (1) is internally connected to a heating furnace (2), the heating furnace (2) is slidably connected to an annealing rack (4), one side of the annealing rack (4) is fixedly connected to a placement rack (5), the main body (1) is internally connected to a first motor (7), a threaded rod (8) is provided in the middle of the first motor (7), the threaded rod (8) is externally threadedly connected to a threaded sleeve (9), the threaded sleeve (9) is axially connected to the heating furnace (2), and one end of the threaded sleeve (9) is axially connected to the annealing rack (4).

2. The single crystal furnace silicon core annealing device according to claim 1, characterized in that: A second motor (10) is fixedly connected inside the main body (1), a gear (11) is provided in the middle of the second motor (10), and the gear (11) is meshedly connected to a gear ring (12).

3. The single crystal furnace silicon core annealing device according to claim 2, characterized in that: The gear ring (12) is fixedly connected to one end of the heating furnace (2), and a plurality of heating tubes are installed in the heating furnace (2).

4. The single crystal furnace silicon core annealing device according to claim 1, characterized in that: The bottom end of the placement rack (5) is fixedly connected to a plurality of heaters (6).

5. The single crystal furnace silicon core annealing device according to claim 1, characterized in that: One end of the placement rack (5) is fixedly connected to the box door (3).

6. The single crystal furnace silicon core annealing device according to claim 4, characterized in that: The surface of the placement rack (5) is coated with an anti-slip coating.

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