Terahertz wave metasurface absorption structural body

Abstract

The terahertz wave metasurface absorption structural body comprises a first metal structural layer, a polyimide dielectric layer and a second metal structural layer which are sequentially arranged from top to bottom, the first metal structure layer comprises a bent metal structure and a metal ring structure; the bent metal structures and the metal ring structures are arranged at intervals; the bent metal structure comprises a first fold line part and a second fold line part; the first fold line part and the second fold line part are symmetrically arranged; the connecting metal strip is arranged between the first fold line part and the second fold line part; and the connecting metal strip is connected with the first fold line part and the second fold line part. According to the technical scheme, compared with the prior art, the bent metal structures and the metal ring structures are additionally arranged, the bent metal structures and the metal ring structures are arranged at intervals, the problem that in the prior art, the absorptivity of a terahertz absorber is low can be solved by adjusting the material structure, and the absorptivity of terahertz waves is improved.

Description

Technical Field

[0001] The present application relates to the technical field of metamaterial wave absorption, and more specifically, to a terahertz wave metasurface absorption structure. Background Art

[0002] With the development of spectrum and electromagnetic metasurfaces, terahertz waves have great application potential in the fields of communication and detection. The terahertz band is a type of electromagnetic wave, which is between the microwave band and the infrared band. It has the characteristics of microwaves and light waves. Its frequency is between 0.1 and 10 THz, and its wavelength is between 30 μm and 3 mm. It has the characteristics of high penetration, broadband, transient and coherence, and is often used in the fields of biomedical imaging and non-destructive testing.

[0003] The terahertz absorber in the prior art has the technical defects of low absorption rate and unstable performance.

[0004] Therefore, how to provide a terahertz wave metasurface absorption structure that can improve the problem of low absorption rate of terahertz absorbers in the prior art and increase the absorption rate of terahertz absorbers has become a technical problem that needs to be urgently solved by those skilled in the art. Utility Model Content

[0005] In order to solve the above technical problems, the present application provides a terahertz wave metasurface absorption structure, which can improve the problem of low absorption rate of terahertz absorbers in the prior art and increase the absorption rate of the terahertz absorber.

[0006] The technical solutions provided by this application are as follows:

[0007] The present application provides a terahertz wave metasurface absorption structure, comprising: a first metal structure layer, a polyimide dielectric layer, and a second metal structure layer arranged in sequence from top to bottom; the first metal structure layer comprises: a bent metal structure and a metal ring structure; the bent metal structure and the metal ring structure are arranged at intervals; the bent metal structure comprises: a first fold line portion and a second fold line portion; the first fold line portion and the second fold line portion are symmetrically arranged; a connecting metal strip arranged between the first fold line portion and the second fold line portion; the connecting metal strip connects the first fold line portion and the second fold line portion.

[0008] Furthermore, in a preferred embodiment of the utility model, it also includes: the first fold line portion and the second fold line portion both include: an intermediate metal bar; a first metal bar provided at one end of the intermediate metal bar; a second metal bar provided at the other end of the intermediate metal bar; the first metal bar and the second metal bar are both perpendicular to the intermediate metal bar.

[0009] Furthermore, in a preferred embodiment of the present invention, it also includes: a graphene strip structure embedded in the polyimide dielectric layer.

[0010] Furthermore, in a preferred embodiment of the utility model, it also includes: a gallium arsenide structure embedded in the first fold line portion and the second fold line portion, which can help achieve regulation from four-band to dual-band by introducing the photosensitive medium gallium arsenide, and can maintain the absorption rate at 95% and above.

[0011] Furthermore, in a preferred embodiment of the present invention, it further comprises: a photoconductive silicon structure embedded in the first metal structure layer. In this solution, by introducing the photoconductive silicon structure, the absorption rate can be increased to 98% on the original basis.

[0012] Furthermore, in a preferred embodiment of the present invention, the photoconductive silicon structure is located between the bent metal structure and the metal ring structure.

[0013] Furthermore, in a preferred embodiment of the present invention, the bent metal structure is an I-shaped structure.

[0014] Furthermore, in a preferred embodiment of the present invention, the thickness of the first metal structure layer and the second metal structure layer are both 0.22-0.28 um; and / or the thickness of the polyimide dielectric layer is 4.50-6.80 um.

[0015] Furthermore, in a preferred embodiment of the present invention, the minimum distance from the edge of the bent metal structure to the edge of the metal ring structure is not less than 35.00 um.

[0016] Furthermore, in a preferred embodiment of the present invention, the length of the first metal structure layer, the second metal structure layer and the polyimide dielectric layer are all 210.00 to 228.00 um, and the width is 190.00 to 216.00 um.

[0017] The utility model provides a terahertz wave metasurface absorption structure, which, compared with the prior art, comprises: a first metal structure layer, a polyimide dielectric layer, and a second metal structure layer arranged in sequence from top to bottom; the first metal structure layer comprises: a bent metal structure and a metal ring structure; the bent metal structure and the metal ring structure are arranged at intervals; the bent metal structure comprises: a first fold line portion and a second fold line portion; the first fold line portion and the second fold line portion are arranged symmetrically; a connecting metal strip arranged between the first fold line portion and the second fold line portion; the connecting metal strip connects the first fold line portion and the second fold line portion. The technical solution involved in the present application can improve the problem of low absorption rate of terahertz absorbers in the prior art by adding a bent metal structure and a metal ring structure, and arranging the bent metal structure and the metal ring structure at intervals, and by adjusting the metamaterial structure involved in the present application, thereby improving the absorption rate of terahertz waves. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0019] Figure 1 A top view of a terahertz wave supersurface absorption structure provided in an embodiment of the utility model;

[0020] Figure 2 It is a front view of a terahertz wave super-surface absorption structure according to an embodiment of the utility model;

[0021] Figure 3 A side view of a terahertz wave supersurface absorption structure according to an embodiment of the utility model;

[0022] Figure 4 This is a relationship diagram of experimental data of the absorption rate and frequency of the terahertz wave metasurface absorption structure in the TM and TE directions in the experiment. DETAILED DESCRIPTION

[0023] In order to enable those skilled in the art to better understand the technical solutions in the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of this application.

[0024] It should be noted that when an element is referred to as being "fixed on" or "set on" another element, it can be directly on the other element or indirectly set on the other element; when an element is referred to as being "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element.

[0025] It should be understood that the terms "length", "width", "up", "down", "front", "back", "first", "second", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0026] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, "multiple" and "several" mean two or more, unless otherwise clearly and specifically defined.

[0027] It should be noted that the structures, proportions, sizes, etc. illustrated in the drawings of this specification are only used to match the contents disclosed in the specification for people familiar with this technology to understand and read, and are not used to limit the conditions under which this application can be implemented. Therefore, they have no substantive technical significance. Any structural modification, change in proportional relationship or adjustment of size should still fall within the scope of the technical content disclosed in this application without affecting the effects and purposes that can be achieved by this application.

[0028] Please Figures 1 to 4 As shown, a terahertz wave metasurface absorption structure provided in an embodiment of the present application includes: a first metal structure layer 1, a polyimide dielectric layer 3, and a second metal structure layer 2 arranged in sequence from top to bottom; the first metal structure layer 1 includes: a bent metal structure 4 and a metal ring structure 5; the bent metal structure 4 and the metal ring structure 5 are arranged at intervals; the bent metal structure 4 includes: a first fold line portion 401 and a second fold line portion 402; the first fold line portion 401 and the second fold line portion 402 are symmetrically arranged; a connecting metal strip 403 arranged between the first fold line portion 401 and the second fold line portion 402; the connecting metal strip 403 connects the first fold line portion 401 and the second fold line portion 402.

[0029] The embodiment of the utility model provides a terahertz wave metasurface absorption structure, which specifically includes: a first metal structure layer 1, a polyimide dielectric layer 3, and a second metal structure layer 2, which are arranged in sequence from top to bottom; the first metal structure layer 1 includes: a bent metal structure 4 and a metal ring structure 5; the bent metal structure 4 and the metal ring structure 5 are arranged at intervals; the bent metal structure 4 includes: a first fold line portion 401 and a second fold line portion 402; the first fold line portion 401 and the second fold line portion 402 are symmetrically arranged; a connecting metal strip 403 arranged between the first fold line portion 401 and the second fold line portion 402; the connecting metal strip 403 connects the first fold line portion 401 and the second fold line portion 402. Compared with the prior art, by adding the bent metal structure 4 and the metal ring structure 5, and arranging the bent metal structure 4 and the metal ring structure 5 at intervals, and by adjusting the metamaterial structure involved in the present application, the problem of low absorption rate of terahertz absorbers in the prior art can be improved, and the absorption rate of terahertz waves can be improved.

[0030] Specifically, in the embodiment of the utility model, it also includes: the first fold line portion 401 and the second fold line portion 402 both include: an intermediate metal bar; a first metal bar provided at one end of the intermediate metal bar; a second metal bar provided at the other end of the intermediate metal bar; the first metal bar and the second metal bar are both perpendicular to the intermediate metal bar.

[0031] Specifically, in the embodiment of the utility model, it also includes: a graphene strip structure embedded in the polyimide dielectric layer 3.

[0032] Specifically, in the embodiment of the present invention, it also includes: a gallium arsenide structure embedded on the first fold line portion 401 and the second fold line portion 402 .

[0033] Specifically, in the embodiment of the utility model, it also includes: a photoconductive silicon structure 6 embedded on the first metal structure layer 1.

[0034] In the embodiment of the utility model, the introduction of the photosensitive medium gallium arsenide can help achieve the change from four-band to dual-band regulation, and the absorption rate can be maintained at 95% and above. In addition, by introducing the photoconductive silicon structure 6, the absorption rate can be increased to 98% on the original basis.

[0035] Specifically, in the embodiment of the present utility model, the optical silicon structure 7 is located between the bent metal structure 4 and the metal ring structure 5 .

[0036] In the embodiment of the utility model, by providing two metal resonant structures, the bent metal structure 4 and the metal ring structure 5 and placing a photoconductive silicon structure therebetween, dual-band broadband to dual-band broadband modulation can be achieved and the absorption rate reaches 98.5%.

[0037] Specifically, in the embodiment of the present utility model, the bent metal structure 4 is an "I"-shaped structure.

[0038] Optionally, in the embodiment of the present utility model, the bent metal structure 4 is a "field"-shaped structure.

[0039] Specifically, in the embodiment of the present utility model, the thicknesses of the first metal structure layer 1 and the second metal structure layer 2 are both 0.22 - 0.28 um; more specifically, the thickness of the polyimide dielectric layer 3 is 4.50 - 6.80 um.

[0040] Specifically, in the embodiment of the present utility model, the minimum distance from the edge of the bent metal structure 4 to the edge of the metal ring structure 5 is not less than 35.00 um.

[0041] Specifically, in the embodiment of the present utility model, the lengths of the first metal structure layer 1, the second metal structure layer 2, and the polyimide dielectric layer 3 are all 210.00 - 228.00 um, and the widths are 190.00 - 216.00 um.

[0042] More specifically, in the embodiment of the present utility model, the lengths of the first metal structure layer 1, the second metal structure layer 2, and the polyimide dielectric layer 3 are all 216.00 - 224.00 um, and the widths are 198.00 - 212.00 um.

[0043] The above description of the disclosed embodiments enables those skilled in the art to implement or use the present utility model. Various modifications to these embodiments will be obvious to those skilled in the art, and the general principles defined herein can be implemented in other embodiments without departing from the spirit or scope of the present utility model. Therefore, the present utility model will not be limited to the embodiments shown herein, but rather to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A terahertz wave supersurface absorption structure, characterized in that: include: A first metal structure layer (1), a polyimide dielectric layer (3), and a second metal structure layer (2) are sequentially arranged from top to bottom; The first metal structure layer (1) comprises: a bent metal structure (4) and a metal ring structure (5); the bent metal structure (4) and the metal ring structure (5) are arranged at intervals; The bent metal structure (4) comprises: a first fold line portion (401) and a second fold line portion (402); the first fold line portion (401) and the second fold line portion (402) are symmetrically arranged; a connecting metal strip (403) arranged between the first fold line portion (401) and the second fold line portion (402); the connecting metal strip (403) connects the first fold line portion (401) and the second fold line portion (402).

2. The terahertz wave supersurface absorption structure according to claim 1, characterized in that: Also includes: The first fold line portion (401) and the second fold line portion (402) both comprise: a middle metal bar; a first metal bar arranged at one end of the middle metal bar; and a second metal bar arranged at the other end of the middle metal bar; the first metal bar and the second metal bar are both perpendicular to the middle metal bar.

3. The terahertz wave supersurface absorption structure according to claim 1, characterized in that: Also includes: A graphene strip structure embedded in a polyimide dielectric layer (3).

4. The terahertz wave supersurface absorption structure according to claim 1, characterized in that: Also includes: A gallium arsenide structure is embedded in the first fold line portion (401) and the second fold line portion (402).

5. The terahertz wave supersurface absorption structure according to claim 3 or 4, characterized in that: Also includes: A photoconductive silicon structure (6) embedded in the first metal structure layer (1).

6. The terahertz wave supersurface absorption structure according to claim 5, characterized in that: The optical silicon structure (6) is located between the bent metal structure (4) and the metal ring structure (5).

7. The terahertz wave supersurface absorption structure according to claim 6, characterized in that: The bent metal structure (4) is an "I"-shaped structure.

8. The terahertz wave supersurface absorption structure according to any one of claims 1 to 7, characterized in that: The thickness of the first metal structure layer (1) and the second metal structure layer (2) are both 0.22 to 0.28 um; and / or the thickness of the polyimide dielectric layer (3) is 4.50 to 6.80 um.

9. The terahertz wave supersurface absorption structure according to claim 8, characterized in that: The minimum distance from the edge of the bent metal structure (4) to the edge of the metal ring structure (5) is not less than 35.00 um.

10. The terahertz wave supersurface absorption structure according to claim 9, characterized in that: The first metal structure layer (1), the second metal structure layer (2) and the polyimide dielectric layer (3) are all 210.00 to 228.00 um in length and 190.00 to 216.00 um in width.

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