Novel strip-shaped lamp
By using gallium nitride LED lamp beads and reasonable design in the lamp, the existing lamps are solved, and the problem of high energy consumption and high temperature and pressure resistance is not resistant to high temperatures and high pressures is achieved, and the use durability and luminous efficiency are achieved.
Patent Information
- Application Number
- CN202421099285.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-05-20
- Publication Date
- 2025-02-07
- Estimated Expiration
- Not applicable · inactive patent
AI Technical Summary
Existing lamps consume a lot of energy, are not resistant to high temperature and high pressure, have poor durability in use, have poor luminous efficiency, and are not rich in color.
GaN LED lamp beads are used, combined with lamp holders, lampshades and lamp panels, and through reasonable design and material selection, the durability and luminous efficiency of the lamp are improved.
It achieves lighting consumption reduction, resource conservation, high temperature and high pressure resistance, durability and stability in use, higher luminous efficiency and richer colors.
Smart Images
Figure CN222437702U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of lamps, in particular to a novel strip lamp. Background Art
[0002] In life, lamps are often used for lighting. Nowadays, more and more lamps use LED lamp beads to provide lighting. LED lamp beads are generally made of silicon substrates, which consume a lot of energy and cannot withstand high temperatures or high pressures. In some special usage environments, the durability of traditional LED lamps will be weakened, affecting the use of lighting. In addition, the luminous efficiency of traditional LED lamps is poor, and the light colors are not rich.
[0003] Therefore, in view of the above problems, the existing lighting technology needs to be further improved. Utility Model Content
[0004] The purpose of the utility model is to overcome the problems of existing lamps such as high energy consumption, energy waste, not resistant to high temperature and high pressure, and prone to reduced durability and poor luminous efficiency. Through the rational design of the lamp, a lamp holder, a lampshade, a lamp board and LED lamp beads are used. The LED lamp beads are selected from gallium nitride LED lamp beads, which can effectively achieve lighting consumption reduction, resource conservation, high temperature and high pressure resistance, durable and stable use, better luminous efficiency, richer colors, etc.
[0005] The technical solution of the utility model is as follows:
[0006] A novel strip light, comprising: a lamp holder, a lamp shade, a lamp board and LED lamp beads, wherein the lamp holder is mounted with the lamp board, the LED lamp beads are electrically connected to the lamp board, a power supply end of the lamp board is externally connected to an external power supply, the lamp shade is mounted on the lamp holder, and the lamp shade covers the LED lamp beads and the lamp board;
[0007] Among them, the LED lamp beads are selected from gallium nitride LED lamp beads, and the LED lamp beads are distributed in a matrix on the lamp board.
[0008] Furthermore, the lamp holder is made of metal or plastic.
[0009] Furthermore, the lampshade is made of transparent plastic material.
[0010] Furthermore, the lampshade and the lamp holder are connected by a snap connection or a threaded rod connection.
[0011] Furthermore, the LED lamp bead includes a first protective layer, a first electrode layer, a base layer, a buffer layer, an N-type layer, a quantum well layer, a P-type layer, an ITO layer, a second electrode layer and a second protective layer, the first protective layer is provided with the first electrode layer, the first electrode layer is provided with the base layer, the base layer is provided with the buffer layer, the N-type layer is provided with the quantum well layer on the N-type layer, the P-type layer is provided with the ITO layer on the P-type layer, the second electrode layer is provided on the ITO layer, the second protective layer is provided on the second electrode layer, the first electrode layer and the second electrode layer are electrically connected to the lamp board respectively, and the N-type layer is electrically connected to the first electrode layer.
[0012] Furthermore, the base layer is made of sapphire material.
[0013] Furthermore, the buffer layer is made of gallium nitride.
[0014] Furthermore, the N-type layer is a silicon-doped gallium nitride layer.
[0015] Furthermore, the quantum well layer is selected from InGaN / GaN quantum well layer.
[0016] Furthermore, the P-type layer is a magnesium-doped gallium nitride layer.
[0017] Furthermore, the first electrode layer and the second electrode layer are made of the same material.
[0018] Furthermore, the first electrode layer and the second electrode layer are made of metal aluminum or metal copper.
[0019] Furthermore, the first protective layer and the second protective layer are both made of the same material.
[0020] Furthermore, the first protective layer and the second protective layer are both silicon dioxide / titanium dioxide thin film layers.
[0021] Beneficial Effects
[0022] The utility model adopts a lamp holder, a lampshade, a lamp board and LED lamp beads through a rational design of the lamp. The LED lamp beads are selected from gallium nitride LED lamp beads, which can effectively achieve lighting consumption reduction, resource conservation, high temperature and high pressure resistance, durable and stable use, better luminous efficiency, richer colors, etc. The protective layer of the silicon dioxide / titanium dioxide film layer can effectively protect the LED lamp beads and has a good waterproof effect; the sapphire base layer can achieve higher thermal conductivity, etc.; the lamp can be widely used in a variety of environments. BRIEF DESCRIPTION OF THE DRAWINGS
[0023] Figure 1 The utility model is a structural schematic diagram of a novel strip light.
[0024] Figure 2 The utility model is a schematic diagram of the internal structure of a novel strip light.
[0025] Figure 3 This is a schematic diagram of the layer structure of an LED lamp bead of a novel strip light of the utility model.
[0026] Figure numbers: 01, lamp holder; 02, lampshade; 03, lamp board; 04, LED lamp bead; 20, first protective layer; 19, first electrode layer; 18, base layer; 17, buffer layer; 16, N-type layer; 15, quantum well layer; 14, P-type layer; 13, ITO layer; 12, second electrode layer; 11, second protective layer. DETAILED DESCRIPTION
[0027] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.
[0028] See also Figure 1-Figure 3 As shown, the utility model provides a new type of strip light, which includes: a lamp holder 01, a lamp shade 02, a lamp board 03 and LED lamp beads 04. The lamp holder 01 is made of plastic material, and the lamp shade 02 is made of transparent plastic material. The lamp holder 01 is mounted with a lamp board 03, and the LED lamp beads 04 are electrically connected to the lamp board 03. The power supply end of the lamp board 03 is externally connected to an external power supply. The lamp shade 02 is mounted on the lamp holder 01, and the lamp shade 02 is connected to the lamp holder 01 by a buckle, and the lamp shade 02 covers the LED lamp beads 04 and the lamp board 03.
[0029] Among them, the LED lamp beads 04 are selected from gallium nitride LED lamp beads 04, and the LED lamp beads 04 are distributed in a matrix on the lamp board 03;
[0030] The LED lamp bead 04 includes a first protective layer 20, a first electrode layer 19, a base layer 18, a buffer layer 17, an N-type layer 16, a quantum well layer 15, a P-type layer 14, an ITO layer 13, a second electrode layer 12 and a second protective layer 11. The first protective layer 20 is provided with a first electrode layer 19, the first electrode layer 19 is provided with a base layer 18, the base layer 18 is provided with a buffer layer 17, the buffer layer 17 is provided with an N-type layer 16, the N-type layer 16 is provided with a quantum well layer 15, the quantum well layer 15 is provided with a P-type layer 14, the P-type layer 14 is provided with an ITO layer 13, the ITO layer 13 is provided with a second electrode layer 12, the second protective layer 11 is provided on the second electrode layer 12, the first electrode layer 19 and the second electrode layer 12 are respectively electrically connected to the lamp board 03, and the N-type layer 16 is electrically connected to the first electrode layer 19;
[0031] Among them, the first protective layer 20 is selected from a silicon dioxide / titanium dioxide thin film layer; the first electrode layer 19 is selected from a metallic copper material; the base layer 18 is selected from a sapphire base material; the buffer layer 17 is selected from a gallium nitride buffer layer; the N-type layer 16 is selected from a silicon-doped gallium nitride layer; the quantum well layer 15 is selected from an indium gallium nitride / gallium nitride quantum well layer; the P-type layer 14 is selected from a magnesium-doped gallium nitride layer; the second electrode layer 12 is selected from a metallic copper material; and the second protective layer 11 is selected from a silicon dioxide / titanium dioxide thin film layer.
[0032] A specific implementation manner of the utility model is as follows: the strip light is assembled, wherein the light board of the strip light is electrically connected with LED lamp beads arranged in a uniform matrix, and the lampshade is buckled and connected to the lamp holder, wherein the LED lamp beads adopt a 200μm thick sapphire substrate, a 10μm thick gallium nitride buffer layer is deposited on the upper surface of the sapphire substrate, a silicon-doped gallium nitride layer is deposited on the gallium nitride buffer layer, a copper film is deposited on the lower surface of the sapphire substrate, and the copper film is electrically connected to the silicon-doped gallium nitride layer, a silicon dioxide / titanium dioxide film layer is deposited on the lower surface of the copper film, an indium gallium nitride / gallium nitride quantum well layer is deposited on the silicon-doped gallium nitride layer, a magnesium-doped gallium nitride layer is deposited on the indium gallium nitride / gallium nitride quantum well layer, an ITO (indium tin oxide) layer is deposited on the magnesium-doped gallium nitride layer, a copper film layer is deposited on the ITO layer, and a silicon dioxide / titanium dioxide film layer is deposited on the copper film layer, and the two electrode layers are electrically connected to the light board respectively.
[0033] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.
Claims
1. A new type of strip light, characterized in that: The strip light comprises: a lamp holder, a lamp shade, a lamp board and LED lamp beads, the lamp holder is mounted with the lamp board, the LED lamp beads are electrically connected to the lamp board, the power supply end of the lamp board is externally connected to an external power supply, the lamp shade is mounted on the lamp holder, and the lamp shade covers the LED lamp beads and the lamp board; Wherein, the LED lamp beads are selected from gallium nitride LED lamp beads, and the LED lamp beads are distributed in a matrix on the lamp board; Among them, the LED lamp bead includes a first protective layer, a first electrode layer, a base layer, a buffer layer, an N-type layer, a quantum well layer, a P-type layer, an ITO layer, a second electrode layer and a second protective layer, the first protective layer is provided with the first electrode layer, the first electrode layer is provided with the base layer, the base layer is provided with the buffer layer, the N-type layer is provided with the quantum well layer on the N-type layer, the P-type layer is provided with the ITO layer on the P-type layer, the second electrode layer is provided on the ITO layer, the second protective layer is provided on the second electrode layer, the first electrode layer and the second electrode layer are electrically connected to the lamp board respectively, and the N-type layer is electrically connected to the first electrode layer.
2. A novel strip light according to claim 1, characterized in that: The base layer is made of sapphire.
3. A novel strip light according to claim 2, characterized in that: The buffer layer is made of gallium nitride.
4. A novel strip light according to claim 3, characterized in that: The N-type layer is a silicon-doped gallium nitride layer.
5. A novel strip light according to claim 4, characterized in that: The quantum well layer is selected from InGaN / GaN quantum well layer.
6. A novel strip light according to claim 5, characterized in that: The P-type layer is a magnesium-doped gallium nitride layer.
7. The novel strip light according to claim 1, characterized in that: The first electrode layer and the second electrode layer are made of the same material.
8. The novel strip light according to claim 1, characterized in that: The first protective layer and the second protective layer are both made of the same material.
9. The novel strip light according to claim 8, characterized in that: The first protective layer and the second protective layer are both silicon dioxide / titanium dioxide thin film layers.