Radio frequency module integrated with balanced power amplifier

Abstract

The utility model relates to a radio frequency module integrated with a balanced power amplifier, which comprises a substrate provided with a plurality of chip areas, each chip area is provided with a first support structure, one or more groups of couplers and a power amplifier chip, and the power amplifier chip comprises a second support structure and a functional device formed on the second support structure. Each of the first supporting structure and the second supporting structure at least comprises two metal layers parallel to the surface of the substrate and a vertical interconnection structure, and one or more groups of couplers are connected with the power amplifier chip to form a coupling structure; the at least one group of couplers is composed of partial metal in the at least two metal layers in the first supporting structure or the second supporting structure and the vertical interconnection structure so as to be arranged in the first supporting structure or the second supporting structure, so that the occupation of a relatively large area caused by the couplers in the radio frequency module device is reduced; the device integration level can be further improved, the loss is reduced, and the device performance is improved.

Description

Technical Field

[0001] The utility model relates to the technical field, in particular to a radio frequency module with an integrated balanced power amplifier. Background Art

[0002] RF module refers to RF front-end module (back-end is often discrete devices). Previously, since discrete devices can also meet the needs of manufacturers, there was a clear distinction between high-end equipment using modules and low-end equipment using discrete devices. Modules can provide higher integration and high performance. However, in the 5G era, due to the sharp increase in the number of RF components in a single product, the area occupied by discrete solutions exceeds the acceptable limit, and the debugging time will be longer. Therefore, modularization has become the development trend of the mobile communication market. Modules are divided into FEMiD (integrated switch, filter and duplexer), PAMiD (integrated multi-mode multi-band PA and FEMiD), LPAMiD (PAMiD plus LNA), DiFEM (RF switch and filter), LFEM (RF switch, low noise amplifier and filter), etc. The design and manufacturing level of filters and other devices is the basis for module product development.

[0003] As an important component in RF module products, the balanced power amplifier (PA) is a common device that can increase the power amplitude of a given input signal, thereby driving the load level of output devices such as transmitters.

[0004] Couplers include directional couplers, dual directional couplers and hybrid couplers, which is a classification method of couplers. In wireless devices, the frequency used for communication between devices is fixed. In order to maintain and control the output gain of the PA device at a certain level, the directional coupler has the function of picking up part of the output and providing feedback to the PA input. Due to the improvement of product integration, PA devices are often made on separate HBT (heterojunction bipolar transistor) chips using SOI (Silicon On Insulator) technology. Therefore, how to further improve the integration of devices and reduce the area occupied by devices has become an important issue in product design.

[0005] In the radio frequency module in the prior art, a balanced power amplifier architecture is often used, and a metal wiring method is often used to implement a coupling structure, but it occupies a large area, making it impossible to achieve better integration of the power amplifier chip. Utility Model Content

[0006] In order to solve the above-mentioned problems in the prior art, the utility model provides a radio frequency module with an integrated balanced power amplifier, which can further improve the device integration and reduce the area occupied by the device.

[0007] The present application provides a radio frequency module with an integrated balanced power amplifier, comprising: a substrate, wherein a plurality of chip areas are provided on the top of the substrate; a first supporting structure, located on at least one of the chip areas, wherein the first supporting structure is a multi-layer stacked structure; a power amplifier chip, located on at least one of the chip areas, wherein the power amplifier chip comprises a second supporting structure and a functional device located on the second supporting structure; the first supporting structure and the second supporting structure both comprise at least two metal layers parallel to the surface of the substrate and a vertical interconnection structure; and one or more groups of couplers, wherein one or more groups of couplers are connected to the power amplifier chip to form a coupling structure, wherein at least one group of couplers is composed of part of the metal in at least two metal layers in the first supporting structure or the second supporting structure and the vertical interconnection structure, so as to be arranged in the first supporting structure or the second supporting structure.

[0008] Optionally, it also includes a cascade coupler that is further coupled to the coupling structure, and the cascade coupler is composed of partial metal in at least two metal layers in the first supporting structure or the second supporting structure and a vertical interconnection structure, so as to be arranged in the first supporting structure or the second supporting structure.

[0009] Optionally, the coupler includes at least one group of front-end couplers for connecting to the front end of the power amplifier chip and at least one group of back-end couplers for connecting to the back end of the power amplifier chip, wherein the front-end coupler or the back-end coupler is composed of partial metal and a vertical interconnection structure in at least two metal layers in the first support structure or the second support structure, so as to be arranged in the first support structure or the second support structure.

[0010] Optionally, the first supporting structure is formed by an SOI process and includes at least two metal layers parallel to the surface of the substrate and a vertical interconnection structure, and the first supporting structure is used to form a first chip, which is another corresponding chip required by the radio frequency module;

[0011] The input end and the output end of the first chip are arranged on the preset layer of the first supporting structure, and the input end and the output end of the power amplifier chip are arranged on the preset layer of the second supporting structure.

[0012] Optionally, when the front-end coupler or the back-end coupler is disposed in the first supporting structure, the input end of the power amplifier chip is connected to the front-end coupler, and the output end of the input end of the power amplifier chip is connected to the back-end coupler.

[0013] Optionally, when the front-end coupler or the back-end coupler is disposed in the second supporting structure, the input end of the power amplifier chip is connected to the front-end coupler, and the output end of the power amplifier chip is connected to the back-end coupler.

[0014] Optionally, the power amplifier chip includes a group of differential balanced power amplifiers, and the differential balanced power amplifier includes a first balanced power amplifier and a second balanced power amplifier;

[0015] A coupler in the shape of a facing structure, a bent structure or a multi-layer structure is formed by partial metal in at least two metal layers in the first supporting structure or the second supporting structure and a vertical interconnection structure.

[0016] Optionally, the front-end coupler is integrated in the first supporting structure or the second supporting structure; the back-end coupler is integrated on the second supporting structure and is electrically connected to the functional device.

[0017] Optionally, the front-end coupler is integrated on the second supporting structure and electrically connected to the functional device; the back-end coupler is integrated in the first supporting structure or the second supporting structure.

[0018] Optionally, the front-end coupler includes an input bridge, the input bridge includes an input end, a first output end and a second output end; the input end of the input bridge is used to receive an input signal, and the input end of the first balanced power amplifier is connected to the first output end of the input bridge;

[0019] The input end of the input bridge is used to receive an input signal;

[0020] The input end of the second balanced power amplifier is connected to the second output end of the input bridge;

[0021] The back-end coupler comprises an output bridge, the output bridge comprises a first input end, a second input end, an isolation port and an output end, the first input end of the output bridge is connected to the output end of the first balanced power amplifier, and the second input end of the output bridge is connected to the output end of the second balanced power amplifier;

[0022] The output end of the output bridge is used to output an output signal.

[0023] The beneficial effect of the utility model is embodied in that the above-mentioned radio frequency module of the integrated balanced power amplifier includes a substrate provided with multiple chip areas, and the chip areas are provided with a first supporting structure, a group or multiple groups of couplers and a power amplifier chip, the power amplifier chip includes a second supporting structure and a functional device formed on the second supporting structure, the first supporting structure and the second supporting structure both include at least two metal layers parallel to the surface of the substrate and a vertical interconnection structure, one group or multiple groups of couplers are connected to the power amplifier chip to form a coupling structure, and since at least one group of couplers is composed of part of the metal in at least two metal layers in the first supporting structure or the second supporting structure and the vertical interconnection structure, and is arranged in the first supporting structure or the second supporting structure, the large area occupied by the coupler in the radio frequency module device is reduced, and the device integration can be further improved, while reducing losses and improving device performance. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 A schematic diagram of a radio frequency module with an integrated balanced power amplifier provided by the utility model;

[0025] Figure 2 A schematic diagram of a radio frequency module with an integrated balanced power amplifier as HBT provided by the utility model;

[0026] Figure 3 A schematic diagram of a balanced power filter amplifier provided by the utility model;

[0027] Figure 4 A schematic diagram of a balanced power filter amplifier provided by the utility model and a rear end directional coupler winding arranged in a first supporting structure or a second supporting structure;

[0028] Figure 5 A cross-sectional schematic diagram of the coupler winding provided by the utility model being arranged on the second supporting structure;

[0029] Figure 6 A cross-sectional schematic diagram of the coupler winding provided by the utility model being arranged on the first supporting structure;

[0030] Figure 7 The coupler winding provided by the utility model is a schematic diagram of a positive shape;

[0031] Figure 8 The coupler winding provided by the utility model is a schematic diagram of a curved shape;

[0032] Fig. 9 The coupler winding provided by the utility model is a schematic diagram of a bent shape.

[0033] Figure numerals: 100-RF front-end module; 200-balanced power filter amplifier; 300-CPL; 400-antenna switch module; 500-filter; 600-low noise amplifier; 10-first balanced power amplifier; 20-second balanced power amplifier; 30-front-end coupler; 40-rear-end coupler; 101-substrate; 201-first supporting structure; 202-second supporting structure; 103-functional device; 104-first chip. DETAILED DESCRIPTION

[0034] As mentioned in the background art, the radio frequency module of the integrated balanced power amplifier formed in the prior art occupies a large area and has a low integration level.

[0035] After research, as an important component in RF module products, the power amplifier (PA, Power Amplifier, referred to as the power amplifier) ​​can increase the power amplitude of a given input signal, thereby driving the load level of output devices such as transmitters. It is a common device. Figure 1 , a radio frequency front-end module 100 integrating a balanced power filter amplifier 200, a CPL (coupler) 300, an ASM (Antenna Switch Module) 400, a filter 500 and a low noise amplifier 600, etc., it can be seen that it includes a PA device (RF power amplifier 200) in at least one transmitting branch. At present, the PA device is made on a separate HBT (heterojunction bipolar transistor) chip using SOI (Silicon On Insulator) technology, such as Figure 2 As shown, HBT (heterojunction bipolar transistor) refers to a transistor in which one or two junctions are made of different semiconductor materials, and its energy band gap can be designed arbitrarily within a certain range. The main advantage of HBT is its high emission efficiency. Its application is basically the same as that of bipolar transistor, but HBT has a higher speed and can operate at a higher frequency.

[0036] After further research, a balanced amplifier architecture is often used in actual design. Figure 3 , which includes at least one group of front-end directional couplers and at least one group of back-end directional couplers, and two amplifier tubes working on different branches. Specifically, the couplers are all 90° directional couplers. Among them, the directional coupler in the balanced power amplifier realizes the coupling structure by metal wiring. Such a design occupies a large area and cannot meet the current increasing demand for low integration of RF modules.

[0037] To this end, the utility model provides a radio frequency module with an integrated balanced power amplifier, including a substrate provided with multiple chip areas, and a first supporting structure, a group or multiple groups of couplers and a power amplifier chip are provided on the chip area, the power amplifier chip includes a second supporting structure and a functional device formed on the second supporting structure, the first supporting structure and the second supporting structure both include at least two metal layers parallel to the surface of the substrate and a vertical interconnection structure, one group or multiple groups of couplers are connected to the power amplifier chip to form a coupling structure, since at least one group of couplers is composed of partial metal in at least two metal layers in the first supporting structure or the second supporting structure and the vertical interconnection structure, and is arranged in the first supporting structure or the second supporting structure, the large area occupied by the coupler in the radio frequency module device is reduced, the device integration can be further improved, and at the same time, the loss is reduced and the device performance is improved.

[0038] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0039] Reference Figures 4 to 6 , a radio frequency module with an integrated balanced power amplifier, a substrate 101, a first supporting structure, a power amplifier chip and one or more couplers.

[0040] The substrate 101 can be understood as the process platform of the RF module, which serves as the bottom support and protection substrate after the RF module is formed. There are multiple chip areas on the top of the substrate 101. The multiple chip areas can be used to form various chips that need to be integrated in the RF module. For example, for a FEMiD module, the chip areas can be used to form devices such as switches, filters and duplexers. For example Figure 2 In the RF module, at least a balanced power amplifier 200, a CPL (coupler) 300, an ASM (Antenna Switch Module) 400, a filter 500 and a low noise amplifier 600 are integrated on the chip area.

[0041] The first support structure 201 is located on at least one of the chip regions, and the first support structure 201 is a multi-layer stacked structure. The first support structure 201 is formed by the SOI process (i.e., adding an insulator material between silicon transistors to reduce the parasitic capacitance ratio between the two) and includes at least two metal layers parallel to the substrate surface and a vertical interconnection structure. The first support structure 201 can be understood as a separate multi-layer stacked structure, which is only used to form a coupler chip, or it can be a semiconductor substrate layer on which other corresponding chips required for the RF module can be formed, which can be called the first chip 104.

[0042] The power amplifier chip is located on at least one chip region, and includes a second support structure 202 and a functional device 103 located on the second support structure 202; a HBT (heterojunction bipolar transistor) is formed by SOI process. The second support structure 202 can be understood as a semiconductor substrate layer for forming the power amplifier chip, that is, at least two metal layers parallel to the substrate surface and a vertical interconnection structure.

[0043] The one or more sets of couplers are connected to the power amplifier chip to form a coupling structure, wherein at least one set of couplers is composed of a portion of metal in at least two metal layers in the first support structure or the second support structure and a vertical interconnection structure, so that the coupler is arranged in the first support structure 201 or the second support structure 202 by winding. In other words, a coupler with a coupling function is formed by the metal stacking relationship and connection relationship inside the first support structure or the second support structure, so that the shape of the coupler can be a positive structure (such as Figure 7 The straight structure diagram shown in FIG. 1 ), the curved structure (such as Figure 8 and Fig. 9 The curved structure schematic diagram shown) or a multi-layer structure.

[0044] Since the first support structure 201 or the second support structure 202 is a multi-layer metal stacked structure composed of partial metal in at least two metal layers and a vertical interconnection structure, the stacking relationship and connection relationship between the multi-layer substrates can be utilized to realize the design of couplers with various structures and shapes. Therefore, arranging the coupler in the first support structure 201 or the second support structure 202 by winding can not only realize the coupling function, but also reduce the space occupied by the coupler, achieve better space utilization, and improve the integration of the entire RF module.

[0045] In this embodiment, Figure 4The schematic diagram of a balanced power amplifier shown in FIG. 1 shows a power amplifier chip including a group of differential balanced power amplifiers, wherein the differential balanced power amplifier includes a first balanced power amplifier 10 and a second balanced power amplifier 20. The coupler connected to the front end (input end) of the power amplifier chip is a front end coupler 30 (input coupler), and the number of the front end couplers 30 can be one group or multiple groups. The coupler connected to the rear end (output end) of the power amplifier chip is a rear end coupler 40 (output coupler), and the number of the rear end couplers 40 can be one group or multiple groups.

[0046] The front-end coupler 30 includes an input bridge, which includes an input end, a first output end and a second output end; the input end of the input bridge is used to receive an input signal, and the input end of the first balanced power amplifier 10 is connected to the first output end of the input bridge. The input end of the input bridge is used to receive an input signal.

[0047] The input end of the second balanced power amplifier 20 is connected to the second output end of the input bridge. The rear coupler 40 includes an output bridge, which includes a first input end, a second input end, an isolation port and an output end. The first input end of the output bridge is connected to the output end of the first balanced power amplifier 10, and the second input end of the output bridge is connected to the output end of the second balanced power amplifier 20. The output end of the output bridge is used to output an output signal.

[0048] In this embodiment, the front-end coupler 30 may be disposed in the first supporting structure 201 or the second supporting structure 202 by winding, or the rear-end coupler 40 may be disposed in the first supporting structure 201 or the second supporting structure 202 by winding.

[0049] For example, the front-end coupler 30 is disposed in the first support structure 201 or the second support structure 202 by winding, and the back-end coupler 40 is disposed on the second support structure 202 and is electrically connected to the functional device 103 .

[0050] For example, the front-end coupler 30 is disposed on the second support structure 202 and electrically connected to the functional device 103; the back-end coupler 40 is disposed in the first support structure 201 or the second support structure 202 by winding.

[0051] By integrating the coupler at any end on the HBT chip and manufacturing at least one other end of the coupler on the substrate or SOI chip 104 to reduce the design freedom caused by its occupied area, a larger design space can be provided for the coupler and other devices.

[0052] In this embodiment, the input end and the output end corresponding to the first chip are arranged on the preset layer of the first supporting structure 201, and the input end and the output end of the power amplifier chip are arranged on the preset layer of the second supporting structure 202.

[0053] like Figure 5 As shown, the front-end coupler 30 or the rear-end coupler 40 is arranged in the second supporting structure 202 , that is, the coupler is arranged in the power amplifier chip. At this time, the input end of the power amplifier chip is connected to the front-end coupler 30 , and the output end of the power amplifier chip is connected to the rear-end coupler 40 .

[0054] like Figure 6 As shown, the front-end coupler 30 or the rear-end coupler 40 is arranged in the first support structure 201. That is to say, the coupler is formed by part of the metal in at least two metal layers in the first support structure or the second support structure and the vertical interconnection structure, so that the coupler is arranged in the first support structure by winding. At this time, the input end of the power amplifier chip is connected to the front-end coupler 30, and the output end of the input end of the power amplifier chip is connected to the rear-end coupler 40. The directional coupler at either end is integrated on the first chip (first support structure 201), thereby avoiding the influence of loss and reducing the area occupied in product design.

[0055] In some embodiments, after the coupling structure formed before and after the power amplifier chip, a cascade coupler may be connected to further couple with the coupling structure. The cascade coupler may be composed of partial metal in at least two metal layers in the first support structure or the second support structure and a vertical interconnection structure, so that the cascade coupler can be arranged in the first support structure 201 or the second support structure 202 by winding.

[0056] Through the RF module with integrated balanced power amplifier in the above embodiment, at least one group of couplers is formed by partial metal and vertical interconnection structure in at least two metal layers in the first support structure 201 or the second support structure 202, so as to realize the integration of couplers at any end on the power amplifier chip 104, and the other at least one end coupler is made on the substrate or the first chip 104, which can reduce the design freedom caused by its occupied area. The directional coupler at any end can also be integrated on the substrate or the first chip 104 to avoid affecting the loss and reduce the area occupied in the product design. It can improve the integration of the power amplifier chip 104 without affecting the product performance.

[0057] In the description of the embodiments of the present invention, it should be understood that the terms "upper", "lower", "front", "rear", etc., indicating the orientation or positional relationship are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention. Among them, "inside" refers to the internal or enclosed area or space. "Periphery" refers to the area around a specific component or a specific area.

[0058] In the description of the embodiments of the present invention, the terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, unless otherwise specified, "plurality" means two or more.

[0059] In the description of the embodiments of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "install", "connect", "connect", and "assemble" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a direct connection, or an indirect connection through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0060] In the description of the embodiments of the present utility model, the term "and / or" is used herein to describe the association relationship of associated objects, indicating that three relationships may exist. For example, A and / or B may represent: A exists alone, A and B exist at the same time, and B exists alone. In addition, the character " / " in this article generally indicates that the associated objects before and after are in an "or" relationship.

[0061] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A radio frequency module with an integrated balanced power amplifier, characterized in that: include: A substrate having a plurality of chip areas on the upper portion of the substrate; A first supporting structure, located on at least one of the chip regions, wherein the first supporting structure is a multi-layer stacked structure; A power amplifier chip, located on at least one of the chip regions, the power amplifier chip comprising a second supporting structure and a functional device located on the second supporting structure; The first supporting structure and the second supporting structure both include at least two metal layers parallel to the surface of the substrate and a vertical interconnection structure; One or more groups of couplers, one or more groups of couplers are connected to the power amplifier chip to form a coupling structure, wherein at least one group of couplers is composed of partial metal in at least two metal layers in the first support structure or the second support structure and a vertical interconnection structure, so as to be arranged in the first support structure or the second support structure.

2. The radio frequency module with integrated balanced power amplifier according to claim 1, characterized in that: It also includes a cascade coupler that is further coupled to the coupling structure. The cascade coupler is composed of partial metal in at least two metal layers in the first supporting structure or the second supporting structure and a vertical interconnection structure, so as to be arranged in the first supporting structure or the second supporting structure.

3. The radio frequency module with integrated balanced power amplifier according to claim 1, characterized in that: The coupler includes at least one group of front-end couplers for connecting to the front end of the power amplifier chip and at least one group of back-end couplers for connecting to the back end of the power amplifier chip, wherein the front-end coupler or the back-end coupler is composed of partial metal and vertical interconnection structure in at least two metal layers in the first support structure or the second support structure, so as to be arranged in the first support structure or the second support structure.

4. The radio frequency module with integrated balanced power amplifier according to claim 3, characterized in that: The first supporting structure is formed by an SOI process and includes at least two metal layers parallel to the surface of the substrate and a vertical interconnection structure. The first supporting structure is used to form a first chip, which is another corresponding chip required by the radio frequency module; The input end and the output end of the first chip are arranged on the preset layer of the first supporting structure, and the input end and the output end of the power amplifier chip are arranged on the preset layer of the second supporting structure.

5. The radio frequency module with integrated balanced power amplifier according to claim 4, characterized in that: When the front-end coupler or the back-end coupler is arranged in the first supporting structure, the input end of the power amplifier chip is connected to the front-end coupler, and the output end of the input end of the power amplifier chip is connected to the back-end coupler.

6. The radio frequency module with integrated balanced power amplifier according to claim 4, characterized in that: When the front-end coupler or the back-end coupler is arranged in the second supporting structure, the input end of the power amplifier chip is connected to the front-end coupler, and the output end of the power amplifier chip is connected to the back-end coupler.

7. The radio frequency module with integrated balanced power amplifier according to claim 4, characterized in that: The power amplifier chip includes a group of differential balanced power amplifiers, and the differential balanced power amplifier includes a first balanced power amplifier and a second balanced power amplifier; A coupler in the shape of a facing structure, a bent structure or a multi-layer structure is formed by partial metal in at least two metal layers in the first supporting structure or the second supporting structure and a vertical interconnection structure.

8. The radio frequency module with integrated balanced power amplifier according to claim 7, characterized in that: The front-end coupler is integrated in the first supporting structure or the second supporting structure; the back-end coupler is integrated on the second supporting structure and is electrically connected to the functional device.

9. The radio frequency module with integrated balanced power amplifier according to claim 7, characterized in that: The front-end coupler is integrated on the second supporting structure and is electrically connected to the functional device; the back-end coupler is integrated in the first supporting structure or the second supporting structure.

10. The radio frequency module with integrated balanced power amplifier according to claim 7, characterized in that: The front-end coupler comprises an input bridge, which comprises an input end, a first output end and a second output end; the input end of the input bridge is used to receive an input signal, and the input end of the first balanced power amplifier is connected to the first output end of the input bridge; The input end of the input bridge is used to receive an input signal; The input end of the second balanced power amplifier is connected to the second output end of the input bridge; The back-end coupler comprises an output bridge, the output bridge comprises a first input end, a second input end, an isolation port and an output end, the first input end of the output bridge is connected to the output end of the first balanced power amplifier, and the second input end of the output bridge is connected to the output end of the second balanced power amplifier; The output end of the output bridge is used to output an output signal.

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