Radio frequency module of integrated power amplifier

Abstract

The utility model relates to a radio frequency module of an integrated power amplifier, which comprises a substrate, a plurality of chip areas above the substrate, a first supporting structure and a second supporting structure which are positioned in at least one chip area, and a functional device positioned on the second supporting structure, the first supporting structure and the second supporting structure comprise at least two layers of metal layers parallel to the surface of the substrate and a vertical interconnection structure, the power amplifier chip further comprises one or more groups of conversion structures connected with the power amplifier chip, the conversion structures are used for realizing balance and unbalance conversion between circuit signals, the conversion structures are circuits formed by passive devices, and the power amplifier chip is connected with the power amplifier chip. At least one passive device in the conversion structure is composed of partial metal in at least two metal layers in the first supporting structure or the second supporting structure and the vertical interconnection structure, so that the occupation of a relatively large area caused by the conversion structure can be reduced, the integration level of the power amplifier chip is improved, and the transmission loss is reduced, thereby meeting the bandwidth requirement of a 5G communication frequency band.

Description

Technical Field

[0001] The utility model relates to the technical field of wireless communications, in particular to a radio frequency module with an integrated power amplifier. Background Art

[0002] RF module refers to the RF front-end module (the back end is often a discrete device). Previously, since discrete devices could also meet the needs of manufacturers, there was a clear distinction between high-end equipment using modules and low-end equipment using discrete devices. Modules can provide higher integration and high performance. However, in the 5G era, due to the sharp increase in demand for the number of RF components in a single product, the area occupied by discrete solutions exceeds the acceptable limit and the debugging time will be longer. Therefore, modularization has become a development trend in the mobile communications market.

[0003] The RF front-end module integrates two or more discrete devices such as RF switches, low noise amplifiers, filters, duplexers, power amplifiers, etc. into one module, thereby improving integration and performance and miniaturizing the volume. According to different integration methods, the main antenna RF link can be divided into: FEMiD (integrated RF switch, filter and duplexer), PAMiD (integrated multi-mode multi-band PA and FEMiD), LPAMiD (LNA, integrated multi-mode multi-band PA and FEMiD), etc.; the diversity antenna RF link can be divided into: DiFEM (integrated RF switch and filter), LFEM (integrated RF switch, low noise amplifier and filter), etc. The design and manufacturing level of filters and other devices is the basis for module product development.

[0004] As an important device in RF module products, the power amplifier (PA) can increase the power amplitude of a given input signal, thereby driving the load level of output devices such as transmitters. It is a common device. Due to the improvement of product integration, power amplifiers are often made on separate HBT (heterojunction bipolar transistor) chips using SOI (Silicon On Insulator) technology. Therefore, how to further improve device integration and reduce the area occupied by devices has become an important issue in product design.

[0005] In the RF module in the prior art, the SMD (Surface Mounted Devices) conversion structure is used to design the power amplifier to improve the integration of the power amplifier and reduce the area occupied by the power amplifier. However, the bandwidth range of the SMD surface mount device is small. For the traditional communication frequency band, the power amplifier can be applied, but it cannot be directly applied to the large bandwidth range of the 5G communication frequency band. Utility Model Content

[0006] In order to solve the above-mentioned problems of the prior art, the utility model provides a radio frequency module with an integrated power amplifier, so that the integration degree can be improved while being applicable to the large bandwidth range of the 5G communication frequency band.

[0007] The present application provides a radio frequency module of an integrated power amplifier, comprising: a substrate, with a plurality of chip areas above the substrate; a first support structure located on at least one of the chip areas, the first support structure comprising at least two metal layers parallel to the surface of the substrate and a vertical interconnection structure; a power amplifier chip, formed on the first support structure, comprising a second support structure and a functional device located on the second support structure, the second support structure comprising at least two metal layers parallel to the surface of the substrate and a vertical interconnection structure; one or more conversion structures connected to the power amplifier chip, the conversion structure being used to achieve balanced and unbalanced conversion between circuit signals, the conversion structure being a circuit composed of passive devices, wherein at least one passive device in the conversion structure is composed of part of the metal in at least two metal layers in the first support structure or the second support structure and the vertical interconnection structure.

[0008] Optionally, the conversion structure includes at least a capacitor and / or an inductor, wherein at least one capacitor and / or an inductor is composed of partial metal in at least two metal layers in the first supporting structure and a vertical interconnection structure, wherein the facing metal forms a capacitor and the winding metal structure forms an inductor.

[0009] Optionally, the conversion structure is a balun circuit, which is a balanced port, an unbalanced port or an impedance converter; the balanced port, the unbalanced port or the impedance converter includes a primary transmission line and a secondary transmission line, and a grounding terminal for connecting to the ground is provided at a preset position of the primary transmission line or the secondary transmission line.

[0010] Optionally, the conversion structure includes at least one group of first conversion structures for connecting to the front end of the power amplifier chip and at least one group of second conversion structures for connecting to the rear end of the power amplifier chip, wherein the input end and the output end of the power amplifier chip are arranged on the preset metal layer of the first supporting structure, the input end is connected to the first conversion structure, and the output end is connected to the second conversion structure;

[0011] At least one passive device in the first conversion structure or the second conversion structure is composed of a portion of metal in at least two metal layers in the first support structure or the second support structure and a vertical interconnection structure.

[0012] Optionally, the power amplifier chip includes a group of differential power amplifiers, the differential power amplifiers include a first power amplifier and a second power amplifier, the first power amplifier and the second power amplifier are configured to be able to operate in a class A state or a class B state, and the first power amplifier and the second power amplifier both include a base, a collector and an emitter;

[0013] The bases of the first power amplifier and the second power amplifier are connected to the output end of the first conversion structure;

[0014] The collectors of the first power amplifier and the second power amplifier are connected to the input end of the second conversion structure;

[0015] The emitters of the first power amplifier and the second power amplifier are both grounded.

[0016] Optionally, at least one passive device in the first conversion structure is composed of partial metal and a vertical interconnection structure in at least two metal layers in the first supporting structure or in the second supporting structure, and the second conversion structure is integrated on the second supporting structure and electrically connected to the functional devices on the second supporting structure.

[0017] Optionally, the first conversion structure is integrated on the second supporting structure and electrically connected to the functional devices on the second supporting structure, and at least one passive device in the second conversion structure is composed of partial metal in at least two metal layers in the first supporting structure or in the second supporting structure and a vertical interconnection structure.

[0018] Optionally, the primary winding of the first conversion structure includes a first coil, the secondary winding of the first conversion structure includes a second coil and a third coil, the first end of the second coil is connected to the first power amplifier; the second end of the second coil is connected to the first end of the third coil, and the second end of the third coil is connected to the second power amplifier;

[0019] The primary winding of the second conversion structure includes a fourth coil and a fifth coil, the secondary winding of the second conversion structure includes a sixth coil, the first power amplifier is connected to the first end of the fourth coil, the second end of the fourth coil is connected to the first end of the fifth coil, and the second end of the fifth coil is connected to the second power amplifier.

[0020] Optionally, the power amplifier chip includes a plurality of groups of differential power amplifiers, each group of the differential power amplifiers includes a first power amplifier and a second power amplifier, the first power amplifier and the second power amplifier are configured to be able to operate in a class A state or a class B state, and the first power amplifier and the second power amplifier both include a base, a collector, and an emitter;

[0021] The bases of the first power amplifier and the second power amplifier of each group of the differential power amplifier are connected to the output end of the first conversion structure;

[0022] The collectors of the first power amplifier and the second power amplifier of each group of the differential power amplifier are connected to the input end of the second conversion structure;

[0023] The emitters of the first power amplifier and the second power amplifier of each group of the differential power amplifier are both grounded;

[0024] The output end of the second conversion structure is connected to the third conversion structure again, and at least one passive device in the third conversion structure is composed of part of the metal in at least two metal layers in the first supporting structure or the second supporting structure and a vertical interconnection structure.

[0025] Optionally, the primary winding of the third conversion structure includes a seventh coil and an eighth coil, the secondary winding of the third conversion structure includes a ninth coil, and the seventh coil and the eighth coil are both connected to the second conversion structure.

[0026] The beneficial effects of the utility model are embodied in that the radio frequency module of the integrated power amplifier mentioned above includes a substrate, a plurality of chip areas above the substrate, a first support structure located in at least one chip area, a second support structure, and a functional device located on the second support structure, wherein the first support structure and the second support structure include at least two metal layers parallel to the surface of the substrate and a vertical interconnection structure, and also include one or more conversion structures connected to the power amplifier chip, the conversion structure is used to realize the balanced and unbalanced conversion between circuit signals, and the conversion structure is a circuit composed of passive devices, wherein at least one passive device in the conversion structure is composed of part of the metal in at least two metal layers in the first support structure or the second support structure and the vertical interconnection structure. Since at least one passive device in the conversion structure is composed of part of the metal in at least two metal layers in the first support structure or the second support structure and the vertical interconnection structure, it is possible to reduce the large area occupied by the conversion structure, improve the integration of the power amplifier chip, and at the same time, avoid affecting the loss and meet the large bandwidth requirements of the 5G communication frequency band. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 A schematic diagram of a radio frequency module with an integrated power amplifier provided by the utility model;

[0028] Figure 2 A schematic diagram of a radio frequency module with an integrated power amplifier as an HBT device provided by the utility model;

[0029] Figure 3 A schematic diagram of a push-pull power amplifier device provided by the utility model;

[0030] Figure 4 A schematic diagram of a power amplifier provided by the utility model working in a Class B state and winding a conversion structure in a first supporting structure or a second supporting structure;

[0031] Figure 5 A schematic diagram of a power amplifier provided by the utility model working in a Class A state and winding a conversion structure in a first supporting structure or a second supporting structure;

[0032] Figure 6 A schematic diagram of a plurality of differential power amplifiers provided by the utility model and winding a conversion structure in a first supporting structure or a second supporting structure;

[0033] Figure 7 The utility model is a schematic cross-sectional view of the substrate winding.

[0034] In the figure: 100-RF front-end module; 200-RF power amplifier; 300-CPL; 400-ASM; 500-filter; 600-low noise amplifier; 10-first power amplifier; 20-second power amplifier; 30-first conversion structure; 40-second conversion structure; 50-third conversion structure; T1-first coil; T2-second coil; T3-third coil; T4-fourth coil; T5 fifth coil; T6-sixth coil; 31-first capacitor; 32-second capacitor; 101-substrate; 201-first supporting structure; 202-second supporting structure. DETAILED DESCRIPTION

[0035] As mentioned in the background art, the radio frequency module formed by the prior art occupies a large area and has a small bandwidth range, and cannot be applied to various communication frequency bands.

[0036] After research, as an important component in RF module products, the power amplifier (PA, Power Amplifier, referred to as the power amplifier) ​​can increase the power amplitude of a given input signal, thereby driving the load level of output devices such as transmitters. It is a common device. Figure 1, an RF front-end module 100 integrating an RF power amplifier 200, a CPL (coupler) 300, an ASM (Antenna Switch Module) 400, a filter 500 and a low noise amplifier 600, etc., it can be seen that it includes a power amplifier (RF power amplifier 200) in at least one transmitting branch. At present, the power amplifier is made on a separate HBT (heterojunction bipolar transistor) chip using SOI (Silicon On Insulator) technology, such as Figure 2 As shown, HBT (heterojunction bipolar transistor) refers to a transistor in which one or two junctions are made of different semiconductor materials, and its energy band gap can be designed arbitrarily within a certain range. The main advantage of HBT is its high emission efficiency. Its application is basically the same as that of bipolar transistor, but HBT has a higher speed and can operate at a higher frequency. In current practical designs, a push-pull amplifier architecture is often used to design power amplifiers through SMD (Surface Mounted Devices) conversion structures.

[0037] After further research, it was found that the prior art uses SMD (Surface Mounted Devices) conversion structure to design power amplifiers when forming RF modules, so as to improve the integration of power amplifiers and reduce the area occupied by power amplifiers. However, the bandwidth range of SMD surface mount devices is relatively small. For traditional communication frequency bands, power amplifiers can be applied, but they cannot be directly applied to the large bandwidth range of 5G communication frequency bands. In addition, the SMD surface mount conversion structure needs to be attached to the first supporting structure and then electrically connected through metal wires, which also makes the formed RF module occupy a larger area and volume.

[0038] To this end, the utility model provides a radio frequency module of an integrated power amplifier, including a substrate, a plurality of chip areas above the substrate, a first supporting structure located at least in the chip area, a second supporting structure and a functional device located on the second supporting structure, the first supporting structure and the second supporting structure include at least two metal layers parallel to the surface of the substrate and a vertical interconnection structure, and also include one or more conversion structures connected to the power amplifier chip, the conversion structure is used to achieve balanced and unbalanced conversion between circuit signals, the conversion structure is a circuit composed of passive devices, since at least one passive device in the conversion structure is composed of part of the metal in at least two metal layers in the first supporting structure or the second supporting structure and the vertical interconnection structure, the large area occupied by the conversion structure can be reduced, the integration of the power amplifier chip can be improved, and the transmission loss can be reduced to meet the bandwidth requirements of the 5G communication frequency band.

[0039] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0040] refer to Figures 3 to 7 As shown, in this embodiment, a radio frequency module with an integrated power amplifier is provided, including a substrate 101, a first supporting structure 201, a power amplifier chip, and one or more conversion structures connected to the power amplifier chip.

[0041] In this embodiment, the power amplifier chip may be a push-pull power amplifier circuit, a Doherty power amplifier circuit, or other amplifier circuits that involve converting radio frequency signals. Optionally, the conversion of the radio frequency signal may be to convert an unbalanced radio frequency signal into two balanced radio frequency signals, or to convert two balanced radio frequency signals into an unbalanced radio frequency signal. In this embodiment, a push-pull power amplifier circuit is used as an example for description.

[0042] The substrate 101 is a process platform of the RF module, and serves as a bottom support and protective substrate after the RF module is formed. There are several chip areas above the substrate 101, and the first support structure 201 is located in at least one of the chip areas. In addition, the first support structure 201 is a multi-layer stacked structure, which is SOI, that is, an insulator material is added between silicon transistors to reduce the parasitic capacitance ratio between the two.

[0043] The power amplifier chip is formed on the first supporting structure 201 by semiconductor integration process.

[0044] In this embodiment, the power amplifier chip is a HBT (heterojunction bipolar transistor) formed by SOI process.

[0045] The power amplifier chip includes a second supporting structure 202 and a functional device 200 located on the second supporting structure 202 .

[0046] The second supporting structure 202 is no different from the first supporting structure, both of which are multi-layer metal stacking structures formed by SOI process, that is, they include at least two metal layers parallel to the surface of the substrate and a vertical interconnection structure, that is, a power amplifier is formed in the corresponding area on the substrate 101 through SOI process.

[0047] The power amplifier chip is connected to one or more conversion structures for converting an unbalanced RF signal into two balanced RF signals, or converting two balanced RF signals into an unbalanced RF signal. The conversion structure is a circuit composed of passive components. In this embodiment, the conversion structure can be a balun circuit, and the balun circuit can be used as a balanced port, an unbalanced port or an impedance converter. The balanced port, the unbalanced port or the impedance converter includes a primary transmission line and a secondary transmission line, and a ground terminal for connecting to the ground can be provided at a preset position in the coil of the primary transmission line or the secondary transmission line.

[0048] In this embodiment, at least one group of conversion structures is arranged in the first support structure 201 or the second support structure 202 by means of winding. Since the conversion structure (metal winding) needs to occupy a certain space, the conversion structure is formed together with the power amplifier chip by means of metal winding, so that the conversion structure is arranged in the first support structure 201 or the second support structure 202. In this way, the large area occupied by the conversion structure (metal winding) can be reduced, the integration of the power amplifier chip can be improved, and at the same time, the loss can be avoided to meet the large bandwidth requirements of the 5G communication frequency band.

[0049] Please refer to Figure 3 The conversion structure includes at least one group of first conversion structures 30 for connecting to the front end of the power amplifier chip and at least one group of second conversion structures 40 for connecting to the rear end of the power amplifier chip.

[0050] like Figure 4 and Figure 5 , at least one passive device in the conversion structure is composed of a portion of metal and a vertical interconnection structure in at least two metal layers in the first support structure or the second support structure 202. It can also be understood that the capacitor or inductor structure in the first conversion structure 30 or the second conversion structure 40 can be arranged in the first support structure 201 or the second support structure 202 by winding.

[0051] The input end and the output end of the power amplifier chip are arranged on the preset metal layer of the first supporting structure 201 , the input end is connected to the first conversion structure 30 , and the output end is connected to the second conversion structure 40 .

[0052] The capacitor or inductor structure in the first conversion structure 30 may be arranged in the first support structure 201 or in the second support structure 202, or the capacitor or inductor structure in the second conversion structure 40 may be arranged in the first support structure 201 or in the second support structure 202. It is understandable that the first conversion structure 30 is arranged at the input end of the power amplifier chip, and the second conversion structure 40 is arranged at the output end of the power amplifier chip, that is, the conversion structure at the input end of the power amplifier chip may be arranged in the first support structure 201 or in the second support structure 202 by winding, that is, at least one passive device in the first conversion structure 30 is composed of part of the metal in at least two metal layers in the first support structure or the second support structure 202 and the vertical interconnection structure. The conversion structure at the output end of the power amplifier chip may also be arranged in the first support structure 201 or in the second support structure 202 by winding, that is, at least one passive device in the second conversion structure 40 is composed of part of the metal in at least two metal layers in the first support structure or the second support structure 202 and the vertical interconnection structure.

[0053] In this embodiment, the conversion structure at the input end of the power amplifier chip is integrated on the HBT chip to avoid affecting the loss, and the conversion structure at the output end of the power amplifier chip is arranged in the first supporting structure 201 or the second supporting structure 202, that is, the design freedom brought by reducing its occupied area.

[0054] It can be understood that the passive structure is a device structure composed of a capacitor, an inductor, or a capacitor and an inductor. Therefore, the conversion structure includes at least a capacitor and / or an inductor, wherein at least one capacitor and / or an inductor is composed of a portion of metal in at least two metal layers in the first support structure and a vertical interconnection structure, wherein the facing metal forms a capacitor and the winding metal structure forms an inductor. The inductor or capacitor in the passive device in the first conversion structure or the second conversion structure can be designed in the first support structure or the second support structure 202 according to actual conditions.

[0055] It can be understood that the expression of setting the conversion structure in the first support structure 201 or the second support structure 202 by winding in this embodiment can be understood as that at least one passive device in the conversion structure can be composed of partial metal and vertical interconnection structure in at least two metal layers in the first support structure or the second support structure 202, that is, setting it in the corresponding support structure means using partial metal and vertical interconnection structure of the metal layer in the corresponding support structure to constitute the passive device in the conversion structure. For example, the first conversion structure 30 is set in the first support structure 201, that is, the capacitor or inductor and other devices in the first conversion structure 30 are composed of partial metal and vertical interconnection structure in the first support structure 201.

[0056] refer to Figure 4 and Figure 5 In this embodiment, the power amplifier chip includes a group of differential power amplifiers, which include a first power amplifier 10 and a second power amplifier 20. The first power amplifier 10 and the second power amplifier 20 can be configured to be able to work in a class A state or to be configured to be able to be used in a class B state. The first power amplifier 10 and the second power amplifier 20 both include a base, a collector and an emitter. The bases of the first power amplifier 10 and the second power amplifier 20 are connected to the output end of the first conversion structure 30, and the collectors of the first power amplifier 10 and the second power amplifier 20 are connected to the input end of the second conversion structure 40. The emitters of the first power amplifier 10 and the second power amplifier 20 are both grounded.

[0057] In this embodiment, the primary winding of the first conversion structure 30 includes a first coil T1, and the secondary winding of the first conversion structure 30 includes a second coil T2 and a third coil T3, the first end of the second coil T2 is connected to the first power amplifier 10; the second end of the second coil T2 is connected to the first end of the third coil T3 and the first end of the first capacitor 31, the first end of the third coil T3 is connected to the second end of the first capacitor 31 and the second end of the first coil T1; the second end of the third coil T3 is connected to the second power amplifier 20.

[0058] The primary winding of the second conversion structure 40 includes a fourth coil T4 and a fifth coil T5, the secondary winding of the second conversion structure 40 includes a sixth coil T6, the first power amplifier 10 is connected to the first end of the fourth coil T4, the second end of the fourth coil T4 is connected to the first end of the second capacitor 32 and to the first end of the fifth coil T5, the first end of the fifth coil T5 is connected to the second end of the second capacitor 32, and the second end of the fifth coil T5 is connected to the second power amplifier 20.

[0059] In this embodiment, the first conversion structure 30 is integrated on the second supporting structure 202 and electrically connected to the PA transistor circuit structure, and the second conversion structure 40 is integrated in the first supporting structure 201 or the second supporting structure 202 .

[0060] In some embodiments, the first conversion structure 30 is integrated into the first supporting structure 201 or the second supporting structure 202 , and the second conversion structure 40 is integrated on the second supporting structure 202 and electrically connected to the PA transistor circuit structure.

[0061] In some embodiments, the power amplifier chip includes multiple groups of differential power amplifiers, each group of differential power amplifiers includes a first power amplifier 10 and a second power amplifier 20, the first power amplifier 10 and the second power amplifier 20 operate in Class A state or Class B state, and the first power amplifier 10 and the second power amplifier 20 both include a base, a collector and an emitter.

[0062] refer to Figure 6 , the power amplifier chip includes two groups of differential power amplifiers, and each group of the differential power amplifiers includes a first power amplifier 10 and a second power amplifier 20. The base of the first power amplifier 10 and the second power amplifier 20 of each group of the differential power amplifiers is connected to the output end of the first conversion structure 30. The collector of the first power amplifier 10 and the second power amplifier 20 of each group of the differential power amplifiers is connected to the input end of the second conversion structure 40. The emitters of the first power amplifier 10 and the second power amplifier 20 of each group of the differential power amplifiers are grounded. The output end of the second conversion structure 40 is connected to the third conversion structure 50 again, and the third conversion structure 50 is integrated in the first support structure 201 or the second support structure 202 through a winding coil. The primary winding of the third conversion structure 50 includes a seventh coil and an eighth coil, and the secondary winding of the third conversion structure 50 includes a ninth coil, and the seventh coil and the eighth coil are both connected to the second conversion structure 40.

[0063] It is understandable that if the power amplifier chip includes three or more groups of differential power amplifiers, there will be a first conversion structure 30 and a second conversion structure 40 corresponding to each group of differential amplifiers, and a suitable number of conversion structures can be set again at the output end of the second conversion structure 40, and a conversion structure can be set again at the rear end of the set suitable number of conversion structures, so that the conversion structure that finally outputs the signal is the third conversion structure 50. Therefore, the number of the third conversion structures 50 is one or more, and the number of the third conversion structures 50 is less than the number of the second conversion structures 40.

[0064] It is understandable that the balun circuit can also be a transmission line transformer type balun circuit, an LC type balun circuit, a coaxial line type balun circuit, or a microstrip type balun circuit. The capacitor or inductor in the balun circuit can be formed by a part of the metal in at least two metal layers in the first support structure or the second support structure 202 and a vertical interconnection structure to reduce the device area and improve the device integration and function.

[0065] refer to Figure 7 , is a partial cross-sectional schematic diagram of a radio frequency module with an integrated power amplifier, comprising a substrate 101, a first support structure 201, a power amplifier chip, and one or more conversion structures connected to the power amplifier chip, wherein at least one conversion structure is arranged in the first support structure 201 by spiral winding. The first support structure 201 is a multi-layer stacked structure, wherein the primary winding of the winding conversion structure and the substrate capacitor are arranged through interlayer through holes between the multi-layer stacked structures to form a conversion structure. The design of the conversion structure is presented in the production of the multi-layer stacked structure.

[0066] Through the RF module of an integrated power amplifier provided above, at least one passive device in at least one group of conversion structures is composed of partial metal and vertical interconnection structure in at least two metal layers in the first supporting structure or the second supporting structure 202, thereby reducing the large area occupied by the conversion structure (metal winding), improving the integration of the power amplifier chip, and at the same time avoiding the impact on loss, meeting the large bandwidth requirements of the 5G communication frequency band.

[0067] In the description of the embodiments of the present invention, it should be understood that the terms "upper", "lower", "front", "rear", etc., indicating the orientation or positional relationship are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention. Among them, "inside" refers to the internal or enclosed area or space. "Periphery" refers to the area around a specific component or a specific area.

[0068] In the description of the embodiments of the present invention, the terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, unless otherwise specified, "plurality" means two or more.

[0069] In the description of the embodiments of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "install", "connect", "connect", and "assemble" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a direct connection, or an indirect connection through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0070] In the description of the embodiments of the present invention, specific features, structures, materials or characteristics may be combined in a suitable manner in any one or more embodiments or examples.

[0071] In the description of the embodiments of the present utility model, the term "and / or" is used herein to describe the association relationship of associated objects, indicating that three relationships may exist. For example, A and / or B may represent: A exists alone, A and B exist at the same time, and B exists alone. In addition, the character " / " in this article generally indicates that the associated objects before and after are in an "or" relationship.

[0072] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A radio frequency module with an integrated power amplifier, characterized in that: include: A substrate, wherein a plurality of chip areas are provided on the substrate; A first support structure located in at least one of the chip regions, the first support structure comprising at least two metal layers parallel to the substrate surface and a vertical interconnection structure; A power amplifier chip is formed on the first supporting structure, comprising a second supporting structure and a functional device located on the second supporting structure, wherein the second supporting structure comprises at least two metal layers parallel to the surface of the substrate and a vertical interconnection structure; A group or more conversion structures connected to the power amplifier chip, the conversion structures are used to achieve balanced and unbalanced conversion between circuit signals, the conversion structures are circuits composed of passive devices, wherein at least one passive device in the conversion structure is composed of part of the metal in at least two metal layers in the first supporting structure or the second supporting structure and a vertical interconnection structure.

2. The radio frequency module with integrated power amplifier according to claim 1, characterized in that: The conversion structure includes at least capacitors and / or inductors, wherein at least one capacitor and / or one inductor is composed of partial metal in at least two metal layers in the first supporting structure and a vertical interconnection structure, wherein the facing metal forms a capacitor and the winding metal structure forms an inductor.

3. The radio frequency module with integrated power amplifier according to claim 2, characterized in that: The conversion structure is a balun circuit, which is a balanced port, an unbalanced port or an impedance converter; the balanced port, the unbalanced port or the impedance converter includes a primary transmission line and a secondary transmission line, and a grounding terminal for connecting to the ground is arranged at a preset position of the primary transmission line or the secondary transmission line.

4. The radio frequency module with integrated power amplifier according to claim 1, characterized in that: The conversion structure includes at least one first conversion structure for connecting to the front end of the power amplifier chip and at least one second conversion structure for connecting to the rear end of the power amplifier chip, wherein the input end and the output end of the power amplifier chip are arranged on the preset metal layer of the first supporting structure, the input end is connected to the first conversion structure, and the output end is connected to the second conversion structure; At least one passive device in the first conversion structure or the second conversion structure is composed of a portion of metal in at least two metal layers in the first support structure or the second support structure and a vertical interconnection structure.

5. The radio frequency module with integrated power amplifier according to claim 4, characterized in that: The power amplifier chip includes a group of differential power amplifiers, the differential power amplifiers include a first power amplifier and a second power amplifier, the first power amplifier and the second power amplifier are configured to be able to work in a class A state or a class B state, and the first power amplifier and the second power amplifier both include a base, a collector and an emitter; The bases of the first power amplifier and the second power amplifier are connected to the output end of the first conversion structure; The collectors of the first power amplifier and the second power amplifier are connected to the input end of the second conversion structure; The emitters of the first power amplifier and the second power amplifier are both grounded.

6. The radio frequency module with integrated power amplifier according to claim 5, characterized in that: At least one passive device in the first conversion structure is composed of partial metal and vertical interconnection structure in at least two metal layers in the first support structure or the second support structure, and the second conversion structure is integrated on the second support structure and electrically connected to the functional device on the second support structure.

7. The radio frequency module with integrated power amplifier according to claim 5, characterized in that: The first conversion structure is integrated on the second supporting structure and electrically connected to the functional devices on the second supporting structure, and at least one passive device in the second conversion structure is composed of partial metal in at least two metal layers in the first supporting structure or in the second supporting structure and a vertical interconnection structure.

8. The radio frequency module with integrated power amplifier according to claim 6, characterized in that: The primary winding of the first conversion structure includes a first coil, and the secondary winding of the first conversion structure includes a second coil and a third coil, wherein the first end of the second coil is connected to the first power amplifier; the second end of the second coil is connected to the first end of the third coil, and the second end of the third coil is connected to the second power amplifier; The primary winding of the second conversion structure includes a fourth coil and a fifth coil, the secondary winding of the second conversion structure includes a sixth coil, the first power amplifier is connected to the first end of the fourth coil, the second end of the fourth coil is connected to the first end of the fifth coil, and the second end of the fifth coil is connected to the second power amplifier.

9. The radio frequency module with integrated power amplifier according to claim 7, characterized in that: The power amplifier chip includes a plurality of groups of differential power amplifiers, each group of the differential power amplifiers includes a first power amplifier and a second power amplifier, the first power amplifier and the second power amplifier are configured to be able to work in a class A state or a class B state, and the first power amplifier and the second power amplifier both include a base, a collector and an emitter; The bases of the first power amplifier and the second power amplifier of each group of the differential power amplifier are connected to the output end of the first conversion structure; The collectors of the first power amplifier and the second power amplifier of each group of the differential power amplifier are connected to the input end of the second conversion structure; The emitters of the first power amplifier and the second power amplifier of each group of the differential power amplifier are both grounded; The output end of the second conversion structure is connected to the third conversion structure again, and at least one passive device in the third conversion structure is composed of part of the metal in at least two metal layers in the first supporting structure or the second supporting structure and a vertical interconnection structure.

10. The radio frequency module with integrated power amplifier according to claim 9, characterized in that: The primary winding of the third conversion structure includes a seventh coil and an eighth coil, the secondary winding of the third conversion structure includes a ninth coil, and the seventh coil and the eighth coil are both connected to the second conversion structure.

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