Semiconductor optical module

Abstract

The utility model discloses a semiconductor optical module, which comprises a flexible circuit board, a chip and a lead, the flexible circuit board comprises a main body structure and a reinforcing structure, the reinforcing structure comprises at least one first bonding layer and at least one reinforcing layer, and the first bonding layer and the reinforcing layer are laminated along the thickness direction of the main body structure. The main body structure comprises a first conducting layer and a first insulating layer, the first conducting layer is located on the side, away from the reinforcing structure, of the first insulating layer, and the first conducting layer comprises a first connecting area and a second connecting area; the chip is electrically connected to the first connection area; one end of the lead is electrically connected to the chip, and the other end is electrically connected to the second connection area; the main body structure further comprises a hard supporting layer, and the supporting layer is arranged on the side, facing the reinforcing structure, of the first insulating layer and at least corresponds to the first connecting area and / or the second connecting area. According to the embodiment, the supporting layer is arranged, the chip and / or the second connecting area can be supported in the welding process, and the welding quality is guaranteed.

Description

Technical Field

[0001] The utility model relates to the technical field of electronic equipment, in particular to a semiconductor optical module. Background Art

[0002] At present, semiconductor optical modules including chips and flexible circuit boards are gradually applied to electronic devices such as smart watches. In some semiconductor optical modules, the chip is first packaged through a substrate and a protective cover to form a module, and the module is then soldered to the flexible circuit board through the substrate and solder. However, the thickness of such semiconductor optical modules is relatively thick, which will affect the volume of the electronic device and is not conducive to the miniaturization of the electronic device. In order to improve this problem, there is currently another electrical connector in which the chip is directly connected to the flexible circuit board, so that the substrate and the solder layer can be omitted, thereby reducing the thickness. Then, due to the loss of the support of the substrate, when the semiconductor optical module is welded to the connection area of ​​the chip or the flexible circuit board by ultrasonic welding, the welding part where the ultrasonic welding head acts will vibrate up and down due to the flexible adhesive layer in the flexible circuit board, resulting in poor welding. Utility Model Content

[0003] The utility model aims to solve at least one of the technical problems existing in the prior art. To this end, the utility model proposes a semiconductor optical module, which can improve the problem of poor welding between the lead and the chip and between the lead and the flexible circuit board.

[0004] According to the first embodiment of the present invention, the semiconductor optical module comprises:

[0005] A flexible circuit board, comprising a main structure and a reinforcement structure connected to one side of the main structure in a thickness direction, the reinforcement structure comprising at least one first adhesive layer and at least one reinforcement layer, the first adhesive layer and the reinforcement layer are stacked along the thickness direction of the main structure, the main structure comprising a first conductive layer and a first insulating layer, the first conductive layer is located on a side of the first insulating layer away from the reinforcement structure, and the first conductive layer comprises a first connection area and a second connection area;

[0006] A chip, electrically connected to the first connection area;

[0007] a lead, one end of which is electrically connected to the chip, and the other end of which is electrically connected to the second connection area;

[0008] Wherein, the main structure further includes a hard supporting layer, and the supporting layer is arranged on a side of the first insulating layer facing the reinforcing structure and is arranged at least corresponding to the first connecting area and / or the second connecting area.

[0009] The semiconductor optical module according to the first embodiment of the utility model has at least the following beneficial effects:

[0010] This embodiment is provided with a support layer, which can support the chip during the process of welding the first end of the lead to the chip, thereby reducing the vibration of the chip and ensuring the welding quality of the lead to the chip. In addition, the support layer can also support the second connection area during the process of welding the second end of the lead to the second connection area, thereby reducing the vibration of the second connection area and ensuring the welding quality of the lead to the second connection area.

[0011] In other embodiments of the present invention, a reference plane parallel to the support layer is defined, and along the thickness direction of the main structure, the projection of the first connection area on the reference plane is located within the projection of the support layer on the reference plane;

[0012] And / or, a reference plane parallel to the supporting layer is defined, and along the thickness direction of the main structure, the projection of the second connecting area on the reference plane is located within the projection of the supporting layer on the reference plane.

[0013] In other embodiments of the present invention, the main structure further includes a second conductive layer, which is disposed on a side of the first insulating layer facing the reinforcement structure, and the second conductive layer is disposed in parallel with the support layer.

[0014] In other embodiments of the present invention, the support layer and the second conductive layer are made of the same material;

[0015] And / or, the support layer and the second conductive layer have the same thickness.

[0016] In other embodiments of the present invention, the support layer and the second conductive layer are spaced apart.

[0017] In other embodiments of the present invention, the reinforcement structure includes a layer of the first adhesive layer and a layer of the reinforcement layer, the reinforcement layer and the main structure are bonded via the first adhesive layer, and the thickness of the first adhesive layer is not greater than 30 μm.

[0018] In other embodiments of the utility model, the reinforcement structure includes multiple layers of the first adhesive layer and multiple layers of the reinforcement layer, adjacent reinforcement layers are bonded to each other through a layer of the first adhesive layer, and the reinforcement layer adjacent to the main structure is bonded to the main structure through a layer of the first adhesive layer, and the sum of the thicknesses of the first adhesive layers is not greater than 30 μm.

[0019] In other embodiments of the present invention, the semiconductor optical module further includes a silver paste layer, and the chip is electrically connected to the first connection area through the silver paste layer.

[0020] The semiconductor optical module according to the second embodiment of the present invention includes:

[0021] A flexible circuit board, comprising a main structure and a reinforcement structure connected to one side of the main structure in a thickness direction, the reinforcement structure comprising a first adhesive layer and a reinforcement layer, the reinforcement layer and the main structure are bonded by the first adhesive layer, the main structure comprising a first conductive layer and a first insulating layer, the first conductive layer is located on a side of the first insulating layer away from the reinforcement structure, and the first conductive layer comprises a first connection area and a second connection area;

[0022] A chip, electrically connected to the first connection area;

[0023] a lead, one end of which is electrically connected to the chip, and the other end of which is electrically connected to the second connection area;

[0024] Wherein, the thickness of the first adhesive layer is not greater than 30 μm.

[0025] The semiconductor optical module according to the third embodiment of the present invention includes:

[0026] A flexible circuit board, comprising a main structure and a reinforcement structure connected to one side of the main structure in a thickness direction, the reinforcement structure comprising a plurality of first adhesive layers and a plurality of reinforcement layers, adjacent reinforcement layers are bonded to each other via a layer of the first adhesive layer, the reinforcement layer adjacent to the main structure is bonded to the main structure via a layer of the first adhesive layer, the main structure comprises a first conductive layer and a first insulating layer, the first conductive layer is located on a side of the first insulating layer away from the reinforcement structure, and the first conductive layer comprises a first connection area and a second connection area;

[0027] A chip, electrically connected to the first connection area;

[0028] a lead, one end of which is electrically connected to the chip, and the other end of which is electrically connected to the second connection area;

[0029] Wherein, the sum of the thicknesses of the first adhesive layers is no more than 30 μm.

[0030] Additional aspects and advantages of the present invention will be given in part in the following description, and in part will become apparent from the following description, or will be learned through the practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] The present invention is further described below with reference to the accompanying drawings and embodiments, wherein:

[0032] Figure 1 It is a schematic diagram of a semiconductor optical module in the related art;

[0033] Figure 2 It is a schematic diagram of a semiconductor optical module in the first embodiment of the utility model;

[0034] Figure 3 for Figure 1 A schematic diagram of the main structure and reinforcement structure of the semiconductor optical module;

[0035] Figure 4 for Figure 1 A schematic diagram of a first conductive layer of a semiconductor optical module;

[0036] Figure 5 for Figure 1 A schematic diagram of a second conductive layer of a semiconductor optical module;

[0037] Figure 6 It is a hierarchical schematic diagram of the main structure and the reinforcement structure of the semiconductor optical module in the second embodiment of the present utility model.

[0038] Reference numerals:

[0039] Flexible circuit board 100, main structure 110, first conductive layer 111, first connection area 1111, second connection area 1112, first insulating layer 112, support layer 113, second conductive layer 114, second insulating layer 115, second adhesive layer 116, third insulating layer 117, third adhesive layer 118, reinforcement structure 120, first adhesive layer 121, reinforcement layer 122;

[0040] Chip 200;

[0041] Lead 300;

[0042] Cap 400. DETAILED DESCRIPTION

[0043] The embodiments of the present invention are described in detail below, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and cannot be understood as limiting the present invention.

[0044] In the description of the present invention, it should be understood that descriptions involving orientation, such as up, down, front, back, left, right, etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0045] In the description of the present utility model, "several" means more than one, "many" means more than two, "greater than", "less than", "exceed" etc. are understood to exclude the number itself, and "above", "below", "within" etc. are understood to include the number itself. If there is a description of "first" or "second", it is only used to distinguish the technical features, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features or implicitly indicating the order of the indicated technical features.

[0046] In the description of the present utility model, unless otherwise clearly defined, terms such as setting, installing, connecting, etc. should be understood in a broad sense, and technicians in the relevant technical field can reasonably determine the specific meanings of the above terms in the present utility model based on the specific content of the technical solution.

[0047] In the description of the utility model, the description with reference to the terms "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the utility model. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0048] Reference Figure 1 , shows a schematic diagram of a semiconductor optical module in the related art. As shown in the figure, the semiconductor optical module includes a chip flexible circuit board 10, a chip 20, a lead 30, a substrate 40, a solder layer 50 and a cover 60, wherein the chip 20 is electrically connected to the upper layer of the substrate, the lead 30 is respectively soldered to the pad on the substrate 40 and the chip 20, the chip 20 and the lead 30 are packaged through the substrate 40 and the cover 60 to form a module, and the module is soldered to the conductive part of the flexible circuit board 10 through the solder layer 50. Figure 1 It can be seen that the thickness of the substrate 40 and the solder layer 50 is relatively thick (for example, the thickness of the substrate 40 is usually in the range of 200μm to 300μm, and the thickness of the solder layer is usually in the range of 20μm to 50μm), resulting in a larger overall thickness H of the semiconductor optical module, which is not conducive to its miniaturization when used in electronic devices such as smart watches.

[0049] Based on the above, there is currently a semiconductor optical module, which Figure 1On the basis of the substrate 40 and the solder layer 50 are omitted, the chip 20 is directly connected to the conductive part of the flexible circuit board 10, so that the thickness of the semiconductor optical module can be reduced. However, due to the lack of support from the substrate 40, such semiconductor optical modules are prone to lead 30 welding quality problems during the preparation process, which are specifically reflected in the welding quality problems between the lead 30 and the chip 20 and the welding quality problems between the lead 30 and the pad of the substrate 40. For ease of understanding, the welding process of the lead 30 is first described: the lead 30 is welded by ultrasonic vibration. The interior of the ultrasonic welding head has a routing channel for sending out the welding wire. During welding, the ultrasonic welding head first welds the end of the welding wire onto the chip 20 (defined as the first point welding). After the end of the welding wire is fixed to the chip 20, the ultrasonic welding head moves to the top of the welding pad of the substrate 40. During the movement, the welding wire is sent out from the welding head and bent to form a wire arc. Then the welding head moves downward and welds the welding wire to the welding pad of the substrate 40 (defined as the second point welding). After the welding is completed, the welding head moves upward to break the welding wire, and the welding wire between the first point and the second point forms the lead 30. In the above process, the flexible circuit board 10 is heated by a vacuum plate, for example, the heating temperature is 160°C, and the welding head will vibrate at a high frequency during the welding process, and the welding wire is welded to the pad of the chip 20 or the substrate 40 by ultrasonic vibration and heating. If there is no substrate 40, welding is directly performed on the pad of the flexible circuit board 10, and the flexible adhesive layer in the flexible circuit board will be softened by heat, so that the pads of the chip 20 and the flexible circuit board 10 will oscillate up and down during the welding process, thereby absorbing the vibration energy applied by the welding head, resulting in the lead 30 not being successfully welded to the pad of the chip 20 and the flexible circuit board 10, or although it is welded to the pad of the chip 20 and the flexible circuit board 10, the connection strength does not meet the requirements, all of which will lead to welding failure. Based on this, the utility model proposes a semiconductor optical module, which can reduce the vibration of the chip 20 and the pad by adding a support or limiting the total thickness of the flexible adhesive layer, thereby ensuring the welding quality, which is described below in conjunction with the accompanying drawings and specific embodiments.

[0050] Reference Figure 2 , shows a schematic diagram of a semiconductor optical module in the first embodiment of the utility model, the semiconductor optical module includes a flexible circuit board 100, a chip 200 and a lead 300, the chip 200 is connected to the conductive part of the flexible circuit board 100, and the lead 300 is respectively connected to the chip 200 and the flexible circuit board 100. In addition, the semiconductor optical module in some embodiments also includes a cover 400, which is bonded to the flexible circuit board 100 by an adhesive and covers the chip 200 and the lead 300. The semiconductor optical module in some embodiments also includes a connection terminal not shown, which is connected to one end of the flexible circuit board 100 away from the chip 200 for connecting with an electronic device.

[0051] The flexible circuit board 100 includes a main structure 110, the main structure 110 has a conductive layer for realizing a conductive function, and further includes a reinforcing structure 120, the reinforcing structure 120 is used to increase the strength of the flexible circuit board 100 in the welding area. The main structure 110 and the reinforcing structure 120 are stacked along the thickness direction of the main structure 110 to Figure 2 As shown in the example, the thickness direction of the main structure 110 is the up-down direction, and the reinforcement structure 120 is connected to the lower side of the main structure 110 .

[0052] The main structure 110 and the reinforcement structure 120 are both multi-layer structures. Figure 3 The main structure 110 includes a first conductive layer 111 and a first insulating layer 112. The first conductive layer 111 is located on a side of the first insulating layer 112 away from the reinforcing structure 120. Figure 2 As shown in the example, the first conductive layer 111 is located on the upper side of the first insulating layer 112. The first conductive layer 111 is made of a conductive material, for example, mainly made of copper.

[0053] Reference Figure 4 The first conductive layer 111 includes a first connection area 1111 and a second connection area 1112, wherein the first connection area 1111 is used to connect the chip 200, and the second connection area 1112 is used to connect one end of the lead 300, and the first connection area 1111 and the second connection area 1112 are separately arranged. Figure 4 In the embodiment shown, the first conductive layer 111 is provided with a plurality of second connection areas 1112, and the plurality of second connection areas 1112 are arranged around the first connection area 1111. It can be understood that the shapes and numbers of the first connection area 1111 and the second connection area 1112 are not limited to Figure 4 The embodiment shown can be adjusted according to different wiring schemes.

[0054] In some embodiments, the main structure 110 may also include other layers, such as Figure 3 The second insulating layer 115 and the second adhesive layer 116 are shown. The second insulating layer 115 is bonded to a side of the first insulating layer 112 away from the reinforcement structure 120 , such as an upper side of the first insulating layer 112 , through the second adhesive layer 116 .

[0055] Reference Figure 3The reinforcement structure 120 includes at least one first adhesive layer 121 and at least one reinforcement layer 122, the first adhesive layer 121 and the reinforcement layer 122 are stacked along the thickness direction of the main structure 110, wherein at least one first adhesive layer 121 is provided between the main structure 110 and the reinforcement structure 120, thereby achieving the connection between the main structure 110 and the reinforcement structure 120. The reinforcement layer 122 is made of a material with a certain hardness and strength, such as a polymer material such as polyimide (PI), or a metal material such as stainless steel.

[0056] The chip 200 is electrically connected to the first connection area 1111, the first end of the lead 300 is electrically connected to the chip 200, and the second end is electrically connected to the second connection area 1112. Figure 2 As shown, the lower side of the chip 200 is connected to the first connection area 1111, and the first end of the lead 300 is electrically connected to the upper side of the chip 200. In this embodiment, the first end and the second end of the lead 300 are connected to the chip 200 and the second connection area 1112 by ultrasonic vibration.

[0057] Reference Figure 2 and Figure 5 In this embodiment, the main structure 110 further includes a support layer 113, which is disposed on a side of the first insulating layer 112 facing the reinforcement structure 120 and is at least disposed corresponding to the first connection area 1111, for example, disposed below the first connection area 1111. The support layer 113 is made of a hard material having a hardness greater than that of the first adhesive layer 121, such as copper foil, and can support the chip 200 during the welding process between the first end of the lead 300 and the chip 200, thereby reducing the vibration of the chip 200 and ensuring the welding quality during the first point welding.

[0058] In other embodiments, the support layer 113 is arranged at least corresponding to the second connection area 1112, for example, arranged below the second connection area 1112, and can support the second connection area 1112 during the welding process between the second end of the lead 300 and the second connection area 1112, thereby reducing the vibration of the second connection area 1112 and ensuring the welding quality during the second point welding.

[0059] On the basis of the first embodiment, in some embodiments of the present invention, the area of ​​the support layer 113 may be larger than the area of ​​the first connection area 1111, so as to achieve a better support effect. Specifically, a reference plane parallel to the support layer 113 is defined, and along the thickness direction of the main structure 110, the projection of the first connection area 1111 on the reference plane is located within the projection of the support layer 113 on the reference plane.

[0060] On the basis of the first embodiment, in some embodiments of the present invention, the area of ​​the support layer 113 may be larger than the area of ​​the second connection area 1112, so as to achieve a better support effect. Specifically, a reference plane parallel to the support layer 113 is defined, and along the thickness direction of the main structure 110, the projection of the second connection area 1112 on the reference plane is located within the projection of the support layer 113 on the reference plane.

[0061] Based on the first embodiment, refer to Figure 3 , Figure 5 In some embodiments of the present invention, the main structure 110 further includes a second conductive layer 114, which is disposed on the side of the first insulating layer 112 facing the reinforcing structure 120, that is, on the same side of the first insulating layer 112 as the supporting layer 113, and the second conductive layer 114 and the supporting layer 113 are disposed in parallel. Figure 5 As shown in the figure, part of the second conductive layer 114 is arranged corresponding to the second connection area 1112, which can play a certain supporting role on the basis of realizing the conductive function. Figure 5 In the illustrated embodiment, the support layer 113 may no longer be disposed below the second connection region 1112. It is understandable that when the second conductive layer 114 is not disposed below the second connection region 1112, the support layer 113 may be disposed for support.

[0062] In some embodiments, the main structure 110 may further include other layers, such as Figure 3 The third insulating layer 117 and the third adhesive layer 118 are shown, and the third insulating layer 117 is bonded to the side of the second conductive layer 114 away from the first conductive layer 111, such as the lower side of the second conductive layer 114, through the third adhesive layer 118. In this embodiment, the reinforcement structure 120 is bonded to the third insulating layer 117 through the first adhesive layer 121.

[0063] When the main structure 110 is further provided with a second conductive layer 114 , in some embodiments of the present invention, the support layer 113 and the second conductive layer 114 are made of the same material, for example, both are mainly copper.

[0064] When the main structure 110 is further provided with a second conductive layer 114 , in some embodiments of the present invention, the support layer 113 and the second conductive layer 114 have the same thickness, so as to facilitate bonding with the third adhesive layer 118 .

[0065] It should be noted that, when the support layer 113 and the second conductive layer 114 are made of the same material and have the same thickness, the support layer 113 and the second conductive layer 114 can be manufactured using the same process, thereby reducing process steps.

[0066] When the main structure 110 is further provided with a second conductive layer 114, Figure 3, Figure 5 In some embodiments of the present invention, the support layer 113 is spaced apart from the second conductive layer 114. In other embodiments, the support layer 113 may be connected to the second conductive layer 114 as a whole. In other words, the support layer 113 may play a conductive role, or the second conductive layer 114 may play a supporting role.

[0067] Based on the first embodiment, refer to Figure 2 and Figure 3 The reinforcement structure 120 includes a first adhesive layer 121 and a reinforcement layer 122, so that the number of layers of the reinforcement structure 120 can be reduced, and the reinforcement layer 122 is bonded to the main structure 110 through the first adhesive layer 121. In this embodiment, the thickness of the first adhesive layer 121 is not greater than 30 μm, so that the compression amount of the first adhesive layer 121 can be controlled, thereby further reducing the vibration of the chip 200 or the second connection area 1112 during the welding process.

[0068] The following is proved by experiments. Four groups of semiconductor optical modules are set up. The diameter of the gold wire used in the experiment is 20 microns and the chips come from the same wafer. The first group of semiconductor optical modules has three first bonding layers 121, the second group of semiconductor optical modules has two first bonding layers 121, the third group of semiconductor optical modules has one first bonding layer 121, and no supporting layer 113 is set under the chip 200. The fourth group of semiconductor optical modules has one first bonding layer 121, and a supporting layer 113 is set under the chip 200, and a second conductive layer 114 is set under the second connection area 1112. Each group of semiconductor optical modules includes 90 samples, and the thickness of the single first bonding layer is 25.4μm.

[0069] The collected data or results include: whether the first end of the lead 300 is welded to the first point of the chip 200, whether the second end of the lead 300 is welded to the second point of the second connection area 1112, the first force for separating the lead 300 from the chip 200 (for the sample in which the lead 300 has been welded to the chip 200), the second force for separating the lead 300 from the second connection area 1112 (for the sample in which the lead 300 has been welded to the second connection area 1112) and CPK (Process Capability Index). The experimental results are shown in the following table:

[0070]

[0071] Among them, the average value of the first force is greater than 10.1g, which is a qualified product; the average value of the second force is greater than 1.5g, which is a qualified product; and CPK is greater than 1.67, which is a qualified product. From the above table, we can see that:

[0072] ① From the first group to the third group, the number of samples in which one end of the lead 300 failed to be welded to the first point of the chip 200 was 25, 18, and 5 respectively. It can be seen that as the thickness of the first adhesive layer 121 decreases, the phenomenon of poor welding at the first point is significantly improved.

[0073] ② From the third group to the fourth group, the number of samples where one end of the lead 300 failed to be welded to the first point of the chip 200 was 5 and 0 respectively. It can be seen that after adding the support layer 113, the phenomenon of poor welding at the first point is completely eliminated.

[0074] ③ From the first group to the fourth group, the number of samples in which one end of the lead 300 failed to be welded to the second point of the second connection area 1112 were 12, 8, 0, and 0 respectively. It can be seen that as the thickness of the first adhesive layer 121 decreases, the phenomenon of poor welding at the second point is significantly improved until it is completely eliminated.

[0075] ④ From the first group to the fourth group, the average values ​​of the first force are 12.81, 13.1, 14.02 and 14.63 respectively. It can be seen that as the thickness of the first adhesive layer 121 decreases, the average value of the first force tends to increase, that is, the welding strength of the first point increases. Therefore, it is proved that controlling the thickness of the first adhesive layer 121 helps to ensure the welding strength of the first point.

[0076] ⑤ From the first group to the fourth group, the average values ​​of the second force are 2.27, 3.38, 3.58 and 5.63 respectively. It can be seen that as the thickness of the first adhesive layer 121 decreases, the average value of the second force tends to increase, that is, the welding strength of the second point increases, thus proving that the second conductive layer 114 can also play a supporting role.

[0077] ⑥ From the first group to the fourth group, the CPK of the first force is 0.45, 1.39, 1.63 and 1.78 respectively. It can be seen that as the thickness of the first bonding layer 121 decreases, the CPK of the first force tends to increase, that is, the distribution of the first force is more concentrated, and the process is more stable. In addition, the CPK of the first to third groups did not meet the standard, and the CPK of the fourth group met the standard. It can be seen that the support layer 113 can also improve the process stability during the first point welding.

[0078] ⑦ From the first group to the fourth group, the CPK of the second force is 0.69, 1.17, 1.54 and 1.72 respectively. It can be seen that as the thickness of the first adhesive layer 121 decreases, the CPK of the second force tends to increase, that is, the distribution of the second force is more concentrated, and the process is more stable. In addition, the CPK of the first to third groups did not meet the standard, and the CPK of the fourth group has met the standard. It can be seen that the support layer 113 can also improve the process stability during the second point welding.

[0079] Based on the first embodiment, refer to Figure 6The reinforcement structure 120 includes multiple first adhesive layers 121 and multiple reinforcement layers 122. Adjacent reinforcement layers 122 are bonded to each other through a first adhesive layer 121. The reinforcement layer 122 adjacent to the main structure 110 is bonded to the main structure 110 through a first adhesive layer 121. In this embodiment, the number of reinforcement layers 122 can be adjusted as needed to form reinforcement structures 120 of different thicknesses. In this embodiment, the thickness of each first adhesive layer 121 is not greater than 30 μm. In this way, the compression amount of the first adhesive layer 121 can be controlled, thereby further reducing the vibration of the chip 200 or the second connection area 1112 during the welding process.

[0080] On the basis of the first embodiment, in some embodiments of the utility model, the semiconductor optical module also includes a silver glue layer not shown, and the chip 200 is electrically connected to the first connection area 1111 through the silver glue layer. The thickness of the silver glue layer is relatively thin, which can further reduce the total thickness of the semiconductor optical module.

[0081] The second embodiment of the present invention also provides a semiconductor optical module, referring to Figure 2 , including a flexible circuit board 100, a chip 200 and a lead 300, wherein the chip 200 is connected to the conductive part of the flexible circuit board 100, and the lead 300 is respectively connected to the chip 200 and the flexible circuit board 100. In addition, the semiconductor optical module in some embodiments further includes a cover 400, which is bonded to the flexible circuit board 100 by an adhesive and covers the chip 200 and the lead 300. The semiconductor optical module in some embodiments further includes a connection terminal not shown, which is connected to one end of the flexible circuit board 100 away from the chip 200 for connecting to an electronic device.

[0082] The flexible circuit board 100 includes a main structure 110, the main structure 110 has a conductive layer for realizing a conductive function, and furthermore, the flexible circuit board 100 includes a reinforcing structure 120, the reinforcing structure 120 is used to increase the strength of the flexible circuit board 100. The main structure 110 and the reinforcing structure 120 are stacked along the thickness direction of the main structure 110 to form a conductive layer. Figure 2 As shown in the example, the thickness direction of the main structure 110 is the up-down direction, and the reinforcement structure 120 is connected to the lower side of the main structure 110 .

[0083] The main structure 110 and the reinforcement structure 120 are both multi-layer structures. Figure 3 The main structure 110 includes a first conductive layer 111 and a first insulating layer 112. The first conductive layer 111 is located on a side of the first insulating layer 112 away from the reinforcing structure 120. Figure 2 As shown in the example, the first conductive layer 111 is located on the upper side of the first insulating layer 112. The first conductive layer 111 is made of a conductive material, for example, mainly made of copper.

[0084] Reference Figure 4 The first conductive layer 111 includes a first connection area 1111 and a second connection area 1112, wherein the first connection area 1111 is used to connect the chip 200, and the second connection area 1112 is used to connect one end of the lead 300, and the first connection area 1111 and the second connection area 1112 are separately arranged.

[0085] Reference Figure 3 The reinforcement structure 120 includes a first adhesive layer 121 and a reinforcement layer 122, so that the number of layers of the reinforcement structure 120 can be reduced, and the reinforcement layer 122 is bonded to the main structure 110 through the first adhesive layer 121. In this embodiment, the thickness of the first adhesive layer 121 is not greater than 30 μm, so that the compression amount of the first adhesive layer 121 can be controlled, thereby further reducing the vibration of the chip 200 or the second connection area 1112 during the welding process.

[0086] The third embodiment of the present utility model further proposes a semiconductor optical module, referring to Figure 2 , including a flexible circuit board 100, a chip 200 and a lead 300, wherein the chip 200 is connected to the conductive part of the flexible circuit board 100, and the lead 300 is respectively connected to the chip 200 and the flexible circuit board 100. In addition, the semiconductor optical module in some embodiments further includes a cover 400, which is bonded to the flexible circuit board 100 by an adhesive and covers the chip 200 and the lead 300. The semiconductor optical module in some embodiments further includes a connection terminal not shown, which is connected to one end of the flexible circuit board 100 away from the chip 200 for connecting to an electronic device.

[0087] The main structure 110 in this embodiment can be understood with reference to the second embodiment. The difference between the reinforcement structure 120 in this embodiment and the second embodiment includes: the reinforcement structure 120 in this embodiment includes multiple first adhesive layers 121 and multiple reinforcement layers 122. Adjacent reinforcement layers 122 are bonded by a first adhesive layer 121. The reinforcement layer 122 adjacent to the main structure 110 is bonded to the main structure 110 by a first adhesive layer 121. In this embodiment, the number of reinforcement layers 122 can be adjusted as needed to form reinforcement structures 120 of different thicknesses. In this embodiment, the sum of the thicknesses of the first adhesive layers 121 is not greater than 30 μm. In this way, the compression amount of the first adhesive layer 121 can be controlled, thereby further reducing the vibration of the chip 200 or the second connection area 1112 during the welding process.

[0088] The fourth embodiment of the utility model provides an electronic device, which can be a smart watch, etc. The electronic device includes a housing, a mainboard and the semiconductor optical module of the above embodiments, the mainboard is arranged in the housing, and the semiconductor optical module is electrically connected to the mainboard through a flexible circuit board, for example, the flexible circuit board is electrically connected to the mainboard through the above connection terminals.

[0089] The embodiments of the utility model are described in detail above in conjunction with the accompanying drawings, but the utility model is not limited to the above embodiments. Various changes can be made within the knowledge of ordinary technicians in the relevant technical field without departing from the purpose of the utility model. In addition, the embodiments of the utility model and the features in the embodiments can be combined with each other without conflict.

Claims

1. A semiconductor optical module, characterized in that: include: A flexible circuit board, comprising a main structure and a reinforcement structure connected to one side of the main structure in a thickness direction, the reinforcement structure comprising at least one first adhesive layer and at least one reinforcement layer, the first adhesive layer and the reinforcement layer are stacked along the thickness direction of the main structure, the main structure comprising a first conductive layer and a first insulating layer, the first conductive layer is located on a side of the first insulating layer away from the reinforcement structure, and the first conductive layer comprises a first connection area and a second connection area; A chip, electrically connected to the first connection area; a lead, one end of which is electrically connected to the chip, and the other end of which is electrically connected to the second connection area; Wherein, the main structure further includes a hard supporting layer, and the supporting layer is arranged on a side of the first insulating layer facing the reinforcing structure and is arranged at least corresponding to the first connecting area and / or the second connecting area.

2. The semiconductor optical module according to claim 1, characterized in that: A reference plane is defined which is parallel to the support layer, and along the thickness direction of the main structure, the projection of the first connection area on the reference plane is located within the projection of the support layer on the reference plane; And / or, a reference plane parallel to the supporting layer is defined, and along the thickness direction of the main structure, the projection of the second connecting area on the reference plane is located within the projection of the supporting layer on the reference plane.

3. The semiconductor optical module according to claim 1, characterized in that: The main structure further includes a second conductive layer, which is arranged on a side of the first insulating layer facing the reinforcement structure, and the second conductive layer is arranged in parallel with the support layer.

4. The semiconductor optical module according to claim 3, characterized in that: The support layer and the second conductive layer are made of the same material; And / or, the support layer and the second conductive layer have the same thickness.

5. The semiconductor optical module according to claim 3, characterized in that: The supporting layer and the second conductive layer are spaced apart from each other.

6. The semiconductor optical module according to claim 1, characterized in that: The reinforcement structure includes a layer of the first adhesive layer and a layer of the reinforcement layer. The reinforcement layer and the main structure are bonded via the first adhesive layer. The thickness of the first adhesive layer is not greater than 30 μm.

7. The semiconductor optical module according to claim 1, characterized in that: The reinforcement structure includes multiple layers of the first adhesive layer and multiple layers of the reinforcement layer. Adjacent reinforcement layers are bonded to each other via a layer of the first adhesive layer. The reinforcement layer adjacent to the main structure is bonded to the main structure via a layer of the first adhesive layer. The sum of the thicknesses of the first adhesive layers is no more than 30 μm.

8. The semiconductor optical module according to claim 1, characterized in that: The semiconductor optical module further includes a silver paste layer, and the chip is electrically connected to the first connection region through the silver paste layer.

9. A semiconductor optical module, characterized in that: include: A flexible circuit board, comprising a main structure and a reinforcement structure connected to one side of the main structure in a thickness direction, the reinforcement structure comprising a first adhesive layer and a reinforcement layer, the reinforcement layer and the main structure are bonded by the first adhesive layer, the main structure comprising a first conductive layer and a first insulating layer, the first conductive layer is located on a side of the first insulating layer away from the reinforcement structure, and the first conductive layer comprises a first connection area and a second connection area; A chip, electrically connected to the first connection area; a lead, one end of which is electrically connected to the chip, and the other end of which is electrically connected to the second connection area; Wherein, the thickness of the first adhesive layer is not greater than 30 μm.

10. A semiconductor optical module, characterized in that: include: A flexible circuit board, comprising a main structure and a reinforcement structure connected to one side of the main structure in a thickness direction, the reinforcement structure comprising a plurality of first adhesive layers and a plurality of reinforcement layers, adjacent reinforcement layers are bonded to each other via a layer of the first adhesive layer, the reinforcement layer adjacent to the main structure is bonded to the main structure via a layer of the first adhesive layer, the main structure comprises a first conductive layer and a first insulating layer, the first conductive layer is located on a side of the first insulating layer away from the reinforcement structure, and the first conductive layer comprises a first connection area and a second connection area; A chip, electrically connected to the first connection area; a lead, one end of which is electrically connected to the chip, and the other end of which is electrically connected to the second connection area; Wherein, the sum of the thicknesses of the first adhesive layers is no more than 30 μm.

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