Chemical vapor deposition carrier structure and chemical vapor deposition equipment

Abstract

The utility model discloses a chemical vapor deposition carrying table structure and chemical vapor deposition equipment, the chemical vapor deposition carrying table structure comprises a carrying table body and a limiting part, the carrying table body is provided with a carrying table end face, and the carrying table end face is used for carrying a substrate; the multiple limiting parts are arranged on the end face of the carrying table at intervals, virtual connecting lines between the limiting parts define a limiting area, and the limiting area is used for limiting the base; wherein one part of the substrate arranged in the limiting area is located in the limiting area, and the other part of the substrate is located outside the limiting area. Compared with an original groove limiting structure, the chemical vapor deposition carrier structure provided by the utility model has the advantages that the limiting area formed by the limiting part is in an open state, so that the substrate part is located outside the limiting area, precursor reaction gas or plasma can smoothly flow on the reaction surface of the substrate, accumulation is avoided, and the reaction efficiency is improved. And uniform distribution of reaction gas is realized, so that the reaction surface of the substrate is uniformly deposited and coated.

Description

Technical Field

[0001] The present application discloses the field of plasma enhanced chemical vapor deposition technology, and in particular, relates to a chemical vapor deposition stage structure and a chemical vapor deposition device. Background Art

[0002] Chemical vapor deposition (PECVD) is a thin film deposition technology that is widely used in the field of thin film coating. Such as semiconductor manufacturing, microelectronic devices, photovoltaic solar cells, optical coatings, biomedical materials, and wear-resistant and corrosion-resistant coatings. It can be used to deposit various functional films, such as silicon nitride films, silicon nitride films, silicon oxide films, etc. The reaction gas is introduced into the deposition chamber, and the reaction gas molecules are ionized into active components such as ions, electrons, free radicals, and metastable species using glow discharge or other forms of plasma sources. These active particles can initiate and join chemical reactions under certain pressure and temperature, so that thin film deposition occurs on the reaction surface of the substrate to achieve substrate coating.

[0003] The existing coating process is to place the substrate to be coated on a carrier in the deposition chamber in advance, and a groove structure is provided on the carrier to accommodate the substrate and limit the substrate. In order to ensure that the substrate can be stably placed in the groove of the carrier during the coating process, the depth of the groove structure is often greater than the thickness of the substrate.

[0004] The groove edge will hinder the flow of the reaction gas on the substrate surface, affecting the effective flow and distribution of the reaction gas, resulting in the edge effect of thin film deposition, making the film on the substrate uneven during film deposition and the film thickness inconsistent. As a result, the properties of the film (such as thickness, refractive index, stress, etc.) are different from those in the central area of ​​the substrate. It is impossible to meet the production requirements of high-quality and high-consistency thin film deposition. Utility Model Content

[0005] A technical problem to be solved by the present application is: how to make the reaction gas flow freely on the reaction surface of the substrate so that the thin film deposition on the substrate surface is uniform.

[0006] In order to solve the above technical problems, the embodiment disclosed in the present application provides a chemical vapor deposition stage structure, including a stage body and a limiting part, the stage body has a stage end surface, the stage end surface is used to carry a substrate; a plurality of limiting parts are arranged on the stage end surface at intervals, and virtual lines between the limiting parts enclose a limiting area, and the limiting area is used to limit the substrate;

[0007] Among them, a part of the substrate placed in the limiting area is located in the limiting area, and the other part is located outside the limiting area.

[0008] In some embodiments, there are three limiting parts forming the limiting area, and virtual lines between the limiting parts form an equilateral triangle.

[0009] In some embodiments, the limiting portion is detachably connected to the carrier body, a plurality of mounting holes are provided on the end surface of the carrier, and a mounting portion is provided at one end of the limiting portion, and the mounting portion is installed in cooperation with the mounting hole.

[0010] In some embodiments, the outer diameter of the mounting portion is smaller than the inner diameter of the mounting hole, and the mounting portion is inserted into the mounting hole with clearance fit.

[0011] In some embodiments, the mounting hole is provided with an internal thread, the mounting portion is provided with an external thread, and the mounting portion and the mounting hole are assembled and installed using the internal and external thread structures.

[0012] In some embodiments, the height of the limiting portion relative to the end surface of the carrier is not less than the thickness of the substrate. The limiting portion is a limiting column or a limiting point.

[0013] In some embodiments, the limiting portion is a limiting column, and a ventilation hole is provided on the limiting column along the width direction.

[0014] In some embodiments, there are multiple limiting areas, which are evenly spaced and arranged on the end surface of the carrier.

[0015] On the other hand, a chemical vapor deposition device is proposed, including a chemical vapor deposition stage structure, including a stage body and a limiting part, the stage body has a stage end face, the stage end face is used to carry a substrate; a plurality of limiting parts are arranged on the stage end face at intervals, and virtual lines between the limiting parts enclose a limiting area to form a limiting area, and the limiting area is used to limit the substrate; wherein, a substrate placed in the limiting area has a part located in the limiting area and another part located outside the limiting area.

[0016] Through the above technical scheme, the chemical vapor deposition carrier structure disclosed in the present application is compared with the original groove limiting structure. The limiting area formed by the limiting part of the present application is in an open state, so that the substrate part is outside the limiting area, so that the precursor reaction gas or plasma can flow smoothly on the reaction surface of the substrate to avoid accumulation, thereby achieving uniform distribution of the reaction gas and allowing the reaction surface of the substrate to be uniformly deposited with a coating. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the embodiments disclosed in the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments disclosed in the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0018] Figure 1 It is a schematic diagram of a carrier structure in the prior art;

[0019] Figure 2 is a schematic diagram of a chemical vapor deposition stage structure disclosed in an embodiment of the present application;

[0020] Figure 3 It is a schematic diagram of the structure in which the substrate disclosed in the embodiment disclosed in the present application is placed in the limiting area;

[0021] Figure 4 is a schematic diagram of placing multiple substrates on a stage structure disclosed in the embodiments disclosed in the present application;

[0022] Figure 5 It is a schematic diagram of assembling substrates of different sizes in the limiting area of ​​the stage structure disclosed in the embodiment disclosed in the present application;

[0023] Figure 6 It is a schematic diagram of the limiting column structure disclosed in the embodiment disclosed in this application.

[0024] Description of reference numerals:

[0025] 00, base; 1, carrier body; 11, carrier end face; 2, limiting portion; 21, mounting portion; 3, limiting area; 4, limiting column; 41, air vent. DETAILED DESCRIPTION

[0026] The following is a further detailed description of the embodiments disclosed in the present application in conjunction with the accompanying drawings and examples. The detailed description of the following embodiments and the accompanying drawings are used to exemplarily illustrate the principles disclosed in the present application, but cannot be used to limit the scope of the present application. The present application can be implemented in many different forms and is not limited to the specific embodiments disclosed herein, but includes all technical solutions falling within the scope of the claims.

[0027] The present application discloses and provides these embodiments in order to make the present application disclosed thoroughly and completely, and to fully express the scope disclosed in the present application to those skilled in the art. It should be noted that unless otherwise specifically stated, the relative arrangement of the parts and steps, the composition of the materials, the numerical expressions and the numerical values ​​set forth in these embodiments should be interpreted as being merely exemplary, and not as limiting.

[0028] It should be noted that, in the description disclosed in this application, unless otherwise specified, the meaning of "multiple" is greater than or equal to two; the terms "upper", "lower", "left", "right", "inner", "outer", etc., indicating the orientation or positional relationship, are only for the convenience of describing the disclosure of this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the disclosure of this application. When the absolute position of the object being described changes, the relative positional relationship may also change accordingly.

[0029] In addition, the words "first", "second" and similar words used in the disclosure of this application do not indicate any order, quantity or importance, but are only used to distinguish different parts. "Vertical" does not mean vertical in the strict sense, but is within the tolerance range. "Parallel" does not mean parallel in the strict sense, but is within the tolerance range. "Include" or "comprising" and similar words mean that the elements before the word include the elements listed after the word, and do not exclude the possibility of also including other elements.

[0030] It should also be noted that in the description disclosed in this application, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be directly connected or indirectly connected through an intermediate medium. For ordinary technicians in this field, the specific meanings of the above terms in the disclosure of this application can be understood according to the specific circumstances. When a specific device is described as being located between a first device and a second device, there may or may not be an intermediate device between the specific device and the first device or the second device.

[0031] All terms used in this application disclosure have the same meanings as those understood by those of ordinary skill in the art to which this application disclosure belongs, unless otherwise specifically defined. It should also be understood that terms defined in general dictionaries, such as those in general dictionaries, should be interpreted as having meanings consistent with their meanings in the context of the relevant technology, and should not be interpreted in an idealized or extremely formal sense, unless explicitly defined herein.

[0032] Technologies, methods, and equipment known to ordinary technicians in the relevant art may not be discussed in detail, but where appropriate, the technologies, methods, and equipment should be considered part of the specification.

[0033] Phase chemical vapor deposition (PECVD) is a thin film deposition technology that can be used to deposit various functional thin films, such as silicon nitride thin films, silicon nitride thin films, silicon oxide thin films, etc., to meet the production, processing and use requirements of products. Reactive gas is introduced into the deposition chamber, and the reactive gas molecules are ionized into active components such as ions, electrons, free radicals and metastable species using glow discharge or other forms of plasma sources. These active particles can initiate and join chemical reactions under certain pressure and temperature, so that thin films are deposited on the reaction surface of the substrate to achieve substrate coating.

[0034] The substrate to be coated is placed on a carrier, which enters the deposition chamber and undergoes a series of coating processes including dust removal, introduction of precursor gas, pressurization, and temperature increase. Figure 1As shown, in order to enable the substrate on the carrier to maintain a stable and immobile state during dust removal and coating, a groove is provided on the carrier so that the groove is adapted to the contour of the substrate or slightly larger than the contour of the substrate, and the substrate is placed in the groove for limiting, thereby achieving a fixing effect.

[0035] However, since the side wall height of the groove is often higher than the thickness of the substrate, the inner wall of the groove will hinder the flow of reaction gas or plasma, triggering edge effect and causing accumulation at the edge of the substrate reaction surface, resulting in uneven film deposition and affecting product yield.

[0036] In order to solve the chemical vapor deposition edge effect caused by the groove structure on the carrier, the present application proposes a carrier structure, by arranging a plurality of limiting parts at intervals on the end face of the carrier, and the virtual lines between the limiting parts enclose a limiting area, and the substrate to be coated is placed in the limiting area, and the limiting parts are located on the outer peripheral side of the substrate, thereby achieving the effect of limiting the substrate, and in order to limit the substrate without causing accumulation of reaction gas or plasma and to make the deposition on the reaction surface of the substrate uniform, a part of the limited substrate is located in the limiting area, and the other part is located outside the limiting area.

[0037] like Figure 2-6 As shown, a chemical vapor deposition stage structure includes a stage body 1 and a limiting portion 2, the stage body 1 has a stage end surface 11, and the stage end surface 11 is used to carry a substrate 00; a plurality of limiting portions 2 are arranged on the stage end surface 11 at intervals, and virtual lines between the limiting portions 2 enclose a limiting area 3, and the limiting area 3 is used to limit the substrate 00;

[0038] Among them, a part of the substrate 00 placed in the limiting area 3 is located inside the limiting area 3, and the other part is located outside the limiting area 3.

[0039] Specifically, in the present embodiment, the substrate 00 is a wafer material which may be a silicon wafer, quartz glass or sapphire, the carrier body 1 is circular or rectangular in shape, and the surface of the carrier body 1 is anodized to form an oxide film on the surface, so as to improve the corrosion resistance, wear resistance and hardness, and improve the durability of the carrier body 1. The carrier body 1 is made of aluminum, which has certain strength, is lightweight and easy to process and shape, and has good thermal conductivity, and can transfer heat to the substrate 00, thereby ensuring the coating effect of the substrate 00.

[0040] The limiting part 2 is fixedly or detachably arranged vertically on the platform end surface 11 , and the fixing method is that the limiting part 2 and the platform body 1 are integrally formed; the detachable connection adopts a threaded connection or the limiting part 2 is plugged into the platform end surface 11 .

[0041] The limiting portion 2 may be a limiting column 4 or a limiting point. In order to achieve a better limiting effect for the limiting area 3 surrounded by the limiting portion 2, the height of the limiting portion 2 shall not be lower than the thickness of the substrate 00. Among them, the limiting area 3 formed by the virtual connecting line between the limiting portions 2 is at least one, and may be multiple, and are evenly arranged on the end surface 11 of the carrier, for limiting multiple substrates 00.

[0042] In order to prevent the limiting portion 2 from obstructing the flow of the precursor reaction gas or plasma, the limiting portion 2 and the substrate 00 are in point contact or are arranged at intervals, wherein point contact refers to the contact between a local point on the outer wall of the substrate 00 and a local point on the inner wall of the limiting portion 2, thereby reducing the contact area and not causing the accumulation of the precursor reaction gas or plasma, so that the flow is smooth and the deposition is uniform on the reaction surface of the substrate 00, thereby achieving a better coating effect.

[0043] And the substrate 00 placed in the limiting area 3 is partially located inside the limiting area 3 and the other part is located outside the limiting area 3. It can be seen that the limiting area 3 formed by the virtual line of the limiting portion 2 only limits and fixes the substrate 00 by point contact, but does not wrap it. Therefore, it will not block the precursor reaction gas or plasma to cause its accumulation, thereby causing uneven deposition on the reaction surface of the substrate 00.

[0044] Compared with the original groove limiting structure, the limiting area 3 formed by the limiting part 2 of the present application does not wrap and limit the substrate 00, but is in an open state, so that part of the substrate 00 is outside the limiting area 3, so that the precursor reaction gas or plasma can flow smoothly on the reaction surface of the substrate 00 to avoid accumulation. It is also possible to avoid the precursor reaction gas or plasma from gathering at the edge of the substrate 00 for a long time through point contact between the limiting part 2 and the substrate 00, thereby avoiding the edge effect caused by deposition, which can significantly improve the problem of thick film deposition at the edge of the substrate 00, thereby improving the yield.

[0045] In some embodiments, there are three limiting portions 2 forming the limiting area 3, and virtual lines between the limiting portions 2 form an equilateral triangle.

[0046] Specifically, the substrate 00 to be coated is mostly circular or approximately circular. In order to limit the circular substrate 00, three limiting parts 2 are set to form the limiting area 3, which are evenly spaced and the connecting lines between the limiting parts 2 and the limiting parts 2 form an equilateral triangle. The three limiting parts 2 are used to form the limiting area 3. On the one hand, the most stable limiting area 3 for the substrate 00 is formed with the least limiting parts 2, and the obstruction of the precursor reaction gas or plasma flow caused by too many limiting parts 2 can be reduced. In addition, a limiting area 3 can be formed by connecting the three limiting parts 2, thereby limiting a substrate 00. The formation and processing of the limiting area 3 on the end surface 11 of the carrier is convenient and the structure is simple.

[0047] Among them, the circular base 00 placed in the limiting area 3 formed by the connecting line between the three limiting parts 2 has three parts outside the limiting area 3, and the limiting area 3 is in an open state, only forming a limiting barrier for the base 00.

[0048] In some embodiments, the limiting portion 2 is detachably connected to the carrier body 1 , a plurality of mounting holes are provided on the carrier end surface 11 , and a mounting portion 21 is provided at one end of the limiting portion 2 , and the mounting portion 21 is installed in cooperation with the mounting hole.

[0049] In some embodiments, the outer diameter of the mounting portion 21 is smaller than the inner diameter of the mounting hole, and the mounting portion 21 is inserted into the mounting hole with clearance fit.

[0050] Specifically, in order to make the carrier body 1 suitable for substrates 00 or wafers of different diameters and specifications, a plurality of mounting holes are arranged on the carrier end surface 11, and a mounting portion 21 adapted to the mounting holes is arranged at the end of the limiting portion 2, wherein the outer diameter of the mounting portion 21 is slightly smaller than the inner diameter of the mounting hole, and the limiting portion 2 can be detachably installed in the mounting holes at different positions on the carrier end surface 11 by plugging, thereby forming limiting areas 3 of different areas, so as to limit substrates 00 of different sizes.

[0051] In some embodiments, the mounting hole is provided with an internal thread, the mounting portion 21 is provided with an external thread, and the mounting portion 21 and the mounting hole are assembled and installed using the internal and external thread structures.

[0052] Specifically, the connection between the limiting part 2 and the platform end surface 11 can also be a threaded connection. Compared with plug-in connection, the connection between the limiting part 2 and the platform body 1 is more secure and not easy to fall out through the internal and external thread structure.

[0053] In some embodiments, the height of the limiting portion 2 relative to the end surface 11 of the stage is not less than the thickness of the substrate 00 .

[0054] Specifically, the height of the limiting portion 2 is greater than or equal to the thickness of the substrate 00, so as to prevent the substrate 00 from being separated from the limiting region 3, thereby affecting the deposition coating effect.

[0055] In some embodiments, the limiting portion 2 is a limiting column 4 or a limiting point.

[0056] Specifically, the limiting portion 2 is a limiting portion 2 with a certain height and a raised limiting point, and the height of the limiting column 4 or the raised limiting point is not less than the thickness of the base 00; wherein the limiting column 4 is vertically arranged on the platform end surface 11, one end is arranged on the platform end surface 11, and the other end extends in a direction away from the platform end surface 11; the limiting point is arranged on the platform end surface 11 and protrudes in a direction away from the platform end surface 11. The limiting point has an arc top, which can prevent the corners of the base 00 and the limiting point from being damaged by collision.

[0057] In some embodiments, the limiting portion 2 is a limiting column 4 , and a vent hole 41 is formed on the limiting column 4 along the width direction.

[0058] Specifically, when the limiting portion 2 is a limiting column 4, the limiting column 4 is a columnar structure with a certain width, a mounting portion 21 is provided at the lower end of the limiting column 4, and a through air hole 41 is provided along the width direction of the limiting column 4. The limiting column 4 around the air hole 41 forms a narrow frame for limiting the substrate 00. The air hole 41 serves as a flow channel, allowing the precursor reaction gas or plasma to pass through the limiting column and flow through the reaction surface of the substrate 00, thereby avoiding obstruction to the flow of the precursor reaction gas or plasma.

[0059] In addition, one end of the limiting column 4 away from the mounting portion 21 is chamfered so that the corners of the limiting column 4 are rounded to prevent the corners of the limiting column 4 from hitting the base 00 and causing damage to the base 00.

[0060] In some embodiments, there are multiple limiting areas 3 that are evenly spaced apart on the end surface 11 of the carrier.

[0061] Specifically, a plurality of limiting areas 3 are provided on the end surface 11 of the carrier, which can limit the plurality of substrates 00, thereby reducing the cost of depositing the coating and improving the work efficiency.

[0062] Embodiment 2

[0063] A chemical vapor deposition device includes a chemical vapor deposition stage structure, including a stage body 1 and a limiting portion 2, the stage body 1 has a stage end surface 11, the stage end surface 11 is used to carry a substrate 00; multiple limiting portions 2 are arranged at intervals on the stage end surface 11, and virtual lines between the limiting portions 2 enclose a limiting area 3, and the limiting area 3 is used to limit the substrate 00; wherein, the substrate 00 placed in the limiting area 3 is partially located in the limiting area 3, and the other part is located outside the limiting area 3.

[0064] Specifically, the chemical vapor deposition equipment includes a deposition chamber and a chemical vapor deposition carrier structure. The substrate 00 to be deposited with a coating is placed in a limiting area 3 for dust removal by blowing. The limiting portion 2 can limit the substrate 00 to prevent it from deviating and escaping from the carrier. When the precursor reaction gas is introduced, the precursor reaction gas can flow freely on the reaction surface of the substrate 00, so that the coating is deposited evenly, thereby improving the production yield.

[0065] The chemical vapor deposition equipment disclosed in the present application adopts a new chemical vapor deposition stage structure. Compared with the original groove limiting structure, the stage structure in the present application is in an open state through the limiting area formed by the limiting part, so that the substrate part is outside the limiting area, so that the precursor reaction gas or plasma can flow smoothly on the reaction surface of the substrate to avoid accumulation, thereby achieving uniform distribution of the reaction gas and allowing the reaction surface of the substrate to be uniformly deposited with a coating.

[0066] So far, the various embodiments disclosed in the present application have been described in detail. In order to avoid obscuring the concept disclosed in the present application, some details known in the art are not described. Based on the above description, those skilled in the art can fully understand how to implement the technical solution disclosed here.

[0067] Although some specific embodiments disclosed in the present application have been described in detail by way of examples, it should be understood by those skilled in the art that the above examples are only for illustration, and are not intended to limit the scope disclosed in the present application. It should be understood by those skilled in the art that the above embodiments may be modified or some technical features may be replaced by equivalents without departing from the scope and spirit disclosed in the present application. In particular, as long as there is no structural conflict, the various technical features mentioned in the various embodiments may be combined in any manner.

Claims

1. A chemical vapor deposition stage structure, characterized in that: include: A carrier body (1) having a carrier end surface (11), wherein the carrier end surface (11) is used to carry a substrate (00); A limiting portion (2), wherein a plurality of the limiting portions (2) are arranged at intervals on the end surface (11) of the carrier, and virtual lines between the limiting portions (2) enclose a limiting area (3), and the limiting area (3) is used to limit the substrate (00); Wherein, the base (00) placed in the limiting area (3) has a portion located inside the limiting area (3) and another portion located outside the limiting area (3).

2. The chemical vapor deposition stage structure according to claim 1, characterized in that: There are three limiting parts (2) forming the limiting area (3), and virtual lines between the limiting parts (2) form an equilateral triangle.

3. The chemical vapor deposition stage structure according to claim 2, characterized in that: The limiting portion (2) is detachably connected to the carrier body (1); a plurality of mounting holes are provided on the carrier end surface (11); a mounting portion (21) is provided at one end of the limiting portion (2); and the mounting portion (21) is mounted in cooperation with the mounting hole.

4. The chemical vapor deposition stage structure according to claim 3, characterized in that: The outer diameter of the mounting portion (21) is smaller than the inner diameter of the mounting hole, and the mounting portion (21) is inserted into the mounting hole with clearance fit.

5. The chemical vapor deposition stage structure according to claim 3, characterized in that: The mounting hole is provided with an internal thread, the mounting portion (21) is provided with an external thread, and the mounting portion (21) and the mounting hole are assembled and installed using internal and external thread structures.

6. The chemical vapor deposition stage structure according to claim 3, characterized in that: The height of the limiting portion (2) relative to the end surface (11) of the carrier is not less than the thickness of the base (00).

7. The chemical vapor deposition stage structure according to claim 2, characterized in that: The limiting portion (2) is a limiting column (4) or a limiting point.

8. The chemical vapor deposition stage structure according to claim 7, characterized in that: The limiting portion (2) is a limiting column (4), and a ventilation hole (41) is provided through the limiting column (4) along the width direction.

9. The chemical vapor deposition stage structure according to claim 1, characterized in that: There are a plurality of limiting areas (3) which are evenly spaced and arranged on the end surface (11) of the carrier.

10. A chemical vapor deposition device, characterized in that: It comprises the chemical vapor deposition stage structure as described in any one of claims 1-9.

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