Wafer test probe and device
By using a combination of hard conductive structures and soft conductive structures in the wafer test probe, the problem of damage caused by wafer test probes in the prior art is solved, and higher packaging quality and more frequent tests are achieved.
Patent Information
- Application Number
- CN202420900002.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-04-26
- Publication Date
- 2025-02-25
- Estimated Expiration
- 2034-04-26
AI Technical Summary
In the prior art, wafer testing probes are prone to damage to bumps during testing, resulting in a reduction in packaging quality.
A wafer test probe including a hard conductive structure and a soft conductive structure is adopted. The end of the hard conductive structure forms a sink groove. The soft conductive structure is located in the sink groove and protrudes outside the sink groove. The soft conductive structure includes conductive glue or conductive powder, which can come into contact with the bump and deform, reducing damage to the bump.
The soft conductive structure contacts the bump to achieve electrical conduction, avoid damage to the bump, improve packaging quality, and increase the number of tests of the wafer for more sufficient detection.
Smart Images
Figure CN222529407U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of wafer testing, in particular to a wafer testing probe and a device. Background Art
[0002] In the packaging processes such as chiplet, wafer level chip scale package (WLCSP), flip chip ball grid array package substrate (Flip Chip Ball Grid Array), the packaging quality is related to the integrity of the bumps after wafer testing. Maintaining the integrity of the bumps during wafer testing is conducive to improving packaging quality.
[0003] Wafer testing of automotive chips is carried out under various temperature conditions. Each time a test is performed, the wafer test probe needs to contact the bump once. In the prior art, the wafer test probe is mainly made of metal materials. During the test, in order to achieve electrical conduction between the wafer test probe and the bump, the wafer test probe makes pressure contact or puncture contact with the bump, which can easily damage the bump, thereby reducing the packaging quality.
[0004] Therefore, the prior art still needs to be improved and developed. Utility Model Content
[0005] The technical problem to be solved by the present invention is to provide a wafer testing probe and a device in view of the above-mentioned defects of the prior art, aiming to solve the problem in the prior art that the wafer testing probe is prone to cause bump damage during testing.
[0006] The technical solution adopted by the utility model to solve the technical problem is as follows:
[0007] A wafer testing probe, comprising:
[0008] A hard conductive structure, wherein an end of the hard conductive structure forms a sink groove;
[0009] The soft conductive structure is located in the sink and protrudes out of the sink.
[0010] In the wafer testing probe, the soft conductive structure comprises at least one of a conductive glue structure and a conductive powder structure.
[0011] The wafer testing probe, wherein the conductive glue structure comprises: a conductive silicone structure and a conductive rubber structure.
[0012] The wafer testing probe, wherein when the soft conductive structure contacts the bump of the wafer, the soft conductive structure is deformed.
[0013] The wafer testing probe, wherein the diameter of the sink is greater than the diameter of the bump.
[0014] The wafer testing probe, wherein the bump comprises at least one of a spherical crown bump and a columnar bump.
[0015] In the wafer testing probe, the hard conductive structure is a metal structure.
[0016] The wafer testing probe, wherein the soft conductive structure is detachably disposed in the sink.
[0017] The wafer testing probe, wherein the soft conductive structure comprises:
[0018] An embedding portion, embedded in the sink;
[0019] A protruding portion, disposed on the embedded portion;
[0020] Wherein, the diameter of the protrusion is greater than or equal to the diameter of the hard conductive structure.
[0021] A wafer testing device, comprising the wafer testing probe as described in any one of the above items.
[0022] Beneficial effects: During testing, the soft conductive structure in the wafer test probe contacts the bump to achieve electrical conduction, and the soft conductive structure is not easy to damage the bump, which is beneficial to improving the packaging quality of the wafer. In addition, since the bump is not easily damaged, the number of wafer tests can be increased, which is beneficial to fully detect the wafer. BRIEF DESCRIPTION OF THE DRAWINGS
[0023] Figure 1 It is a schematic diagram of the wafer test probe test in the utility model.
[0024] Figure 2 It is a cross-sectional view of the wafer test probe during testing in the utility model.
[0025] Figure 3 It is an exploded view of the wafer test probe in the utility model.
[0026] Description of reference numerals:
[0027] 10. Hard conductive structure; 11. Groove; 20. Soft conductive structure; 21. Embedded portion; 22. Protruding portion; 30. Wafer; 31. Bump. DETAILED DESCRIPTION
[0028] In order to make the purpose, technical solution and advantages of the utility model clearer and more specific, the utility model is further described in detail with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described here are only used to explain the utility model and are not used to limit the utility model.
[0029] Please also see Figure 1-Figure 3 The utility model provides some preferred embodiments of a wafer test probe.
[0030] like Figure 1 and Figure 2 As shown, the wafer test probe includes:
[0031] A hard conductive structure 10, wherein a sink 11 is formed at an end of the hard conductive structure 10;
[0032] The soft conductive structure 20 is located in the sink 11 and protrudes out of the sink 11 .
[0033] Specifically, the hard conductive structure 10 refers to a conductive structure with a relatively high hardness, and the soft conductive structure 20 refers to a conductive structure with a relatively low hardness. The hardness of the soft conductive structure 20 is less than the hardness of the bump 31 of the wafer 30. During the test, the soft conductive structure 20 in the wafer test probe contacts the bump 31 to achieve electrical conduction, and the soft conductive structure 20 is not easy to damage the bump 31, which is beneficial to improving the packaging quality of the wafer 30. In addition, since the bump 31 is not easy to be damaged, the number of tests on the wafer 30 can be increased, which is beneficial to fully testing the wafer 30.
[0034] The sink 11 is disposed at the end of the hard conductive structure 10, a portion of the soft conductive structure 20 is located inside the sink 11, and another portion is located outside the sink 11, and the portion of the soft conductive structure 20 located outside the sink 11 contacts the bump 31. The hard conductive structure 10 is cylindrical or polygonal, and the sink 11 is cylindrical or polygonal, where the polygon includes but is not limited to a triangle, a quadrilateral, a pentagon, a hexagon, etc.
[0035] In a preferred embodiment of the present invention, the soft conductive structure 20 includes: at least one of a conductive glue structure and a conductive powder structure.
[0036] Specifically, the soft conductive structure 20 may be a conductive glue structure or a conductive powder structure. The conductive glue structure is made of conductive glue, and the conductive powder structure is made of conductive powder.
[0037] In a preferred embodiment of the present invention, the conductive adhesive structure includes: a conductive silicone structure and a conductive rubber structure.
[0038] Specifically, the conductive adhesive may be conductive silicone or conductive rubber.
[0039] In a preferred embodiment of the present invention, when the soft conductive structure 20 contacts the bump 31 of the wafer 30 , the soft conductive structure 20 is deformed.
[0040] Specifically, the soft conductive structure 20 can be deformed. When the soft conductive structure 20 contacts the bump 31 of the wafer 30, the soft conductive structure 20 is deformed and covers the surface of the bump 31, and it is not easy to damage the bump 31. After the test is completed, the soft conductive structure 20 and the bump 31 are separated, and the soft conductive structure 20 recovers the deformation. Since the soft conductive structure 20 is deformed when contacting the bump 31, the debris or contaminants on the bump 31 can be squeezed and removed by the soft conductive structure 20.
[0041] In a preferred embodiment of the present invention, please also refer to Figure 1-Figure 2 , the diameter of the sink 11 is greater than the diameter of the protrusion 31 .
[0042] Specifically, the diameter of the sink 11 is slightly larger than the diameter of the bump 31. On the one hand, even if the position of the wafer test probe deviates slightly from the position of the bump 31, the soft conductive structure 20 can still contact the bump 31 to achieve electrical conduction. On the other hand, even if the wafer test probe contacts the bump 31 and is too close to compress the soft conductive structure 20, the bump 31 moves into the sink 11, and the hard conductive structure 10 is not easy to damage the bump 31.
[0043] In a preferred embodiment of the present invention, please also refer to Figure 1-Figure 2 The bump 31 includes at least one of a spherical bump and a columnar bump.
[0044] Specifically, the shape of the bump 31 can be various, such as spherical cap, columnar, cubic, etc.
[0045] In a preferred embodiment of the present invention, the hard conductive structure 10 is a metal structure.
[0046] Specifically, the hard conductive structure 10 is made of metal material to form a metal structure.
[0047] In a preferred embodiment of the present invention, the soft conductive structure 20 is detachably disposed in the sink 11 .
[0048] Specifically, the soft conductive structure 20 can be removed from the sink 11 to replace the soft conductive structure 20. As the number of tests increases, the soft conductive structure 20 may be worn out, so the soft conductive structure 20 can be removed and replaced with a new soft conductive structure 20. It is not necessary to remove the entire wafer test probe, and the repair, maintenance and care of the wafer test probe are more convenient.
[0049] In a preferred embodiment of the present invention, please also refer to Figure 2-Figure 3 , the soft conductive structure 20 comprises:
[0050] An embedding portion 21, embedded in the sink 11;
[0051] A protruding portion 22, disposed on the embedded portion 21;
[0052] The diameter of the protrusion 22 is greater than or equal to the diameter of the hard conductive structure 10 .
[0053] Specifically, the soft conductive structure 20 includes an embedded portion 21 and a protruding portion 22, wherein the embedded portion 21 is embedded in the sink 11, and the protruding portion 22 protrudes from the sink 11. The cross section of the soft conductive structure 20 is T-shaped, wherein the width or diameter of the protruding portion 22 is relatively large, and the width or diameter of the embedded portion 21 is relatively small, that is, the width of the protruding portion 22 is greater than the width of the embedded portion 21, or the diameter of the protruding portion 22 is greater than the diameter of the embedded portion 21. The depth of the sink 11 is greater than the diameter or width of the sink 11, and the embedded portion 21 is more secure after being embedded and is not easy to fall off.
[0054] In a preferred embodiment of the present invention, please also refer to Figure 2-Figure 3 , the embedded portion 21 and the protruding portion 22 are integrally formed.
[0055] Specifically, the embedded portion 21 and the protruding portion 22 are integrally formed, and the two have good integrity and are not easily damaged.
[0056] Based on the wafer testing probe of any one of the above embodiments, the utility model further provides a wafer testing device, including the wafer testing probe described in any one of the above embodiments, as specifically described above.
[0057] The wafer testing device provided by the utility model has all the above beneficial effects because it is provided with the wafer testing probe described in any of the above technical solutions, which will not be described in detail here.
[0058] It should be understood that the application of the present invention is not limited to the above examples. For ordinary technicians in this field, improvements or changes can be made according to the above description. All these improvements and changes should fall within the scope of protection of the claims attached to the present invention.
Claims
1. A wafer test probe, characterized in that: It includes: A hard conductive structure, wherein an end of the hard conductive structure forms a sink groove; The soft conductive structure is located in the sink and protrudes out of the sink.
2. The wafer testing probe according to claim 1, characterized in that: The soft conductive structure includes: at least one of a conductive glue structure and a conductive powder structure.
3. The wafer testing probe according to claim 2, characterized in that: The conductive adhesive structure includes: a conductive silicone structure and a conductive rubber structure.
4. The wafer testing probe according to claim 1, characterized in that: When the soft conductive structure contacts the bump of the wafer, the soft conductive structure is deformed.
5. The wafer testing probe according to claim 4, characterized in that: The diameter of the sink is greater than the diameter of the protrusion.
6. The wafer testing probe according to claim 5, characterized in that: The bumps include at least one of spherical bumps and columnar bumps.
7. The wafer testing probe according to claim 1, characterized in that: The hard conductive structure is a metal structure.
8. The wafer testing probe according to claim 1, characterized in that: The soft conductive structure is detachably arranged in the sink.
9. The wafer testing probe according to any one of claims 1 to 8, characterized in that: The soft conductive structure comprises: An embedding portion, embedded in the sink; A protruding portion, disposed on the embedded portion; Wherein, the diameter of the protrusion is greater than or equal to the diameter of the hard conductive structure.
10. A wafer testing device, characterized in that: It comprises the wafer testing probe as claimed in any one of claims 1 to 9.