Broadband directional bridge based on resistance power division network and radio frequency transistor

Abstract

The utility model discloses a broadband directional bridge based on a resistance power division network and a radio frequency transistor. The broadband directional bridge comprises a test port P1, a signal source straight-through port P2, a signal detection port P3, a 3dB attenuation network, the resistance power division network, a 10dB attenuation network, a transistor power-on bias network, a transistor bypass network and triodes. Wherein the signal source straight-through port P2 is coupled to the input end of the 3dB attenuation network through the blocking capacitor C1, the output end of the 3dB attenuation network is coupled to the input end of the resistance power division network, the output end of the resistance power division network is loaded with the test port P1, one output end of the resistance power division network is coupled to the input end of the 10dB attenuation network, and the other output end of the 10dB attenuation network is loaded with the test port P1. The other output end is coupled to the transistor bypass network through a blocking capacitor C4; according to the utility model, the resistor power division network and the radio frequency transistor are combined, a directional bridge covered by broadband is realized, and the whole circuit is smaller and more stable.

Description

Technical Field

[0001] The utility model relates to the technical field of electric bridges, in particular to a broadband directional electric bridge based on a resistance power division network and a radio frequency transistor. Background Art

[0002] The directional bridge is an important component in the RF circuit. It is widely used in the measurement of signal power distribution, signal power sampling, signal directional coupling, etc., especially as a key core component of the vector network analyzer. However, the vector network analyzer requires the directional bridge to have an extremely wide frequency band coverage from low frequency to high frequency.

[0003] The most commonly used technical solutions include:

[0004] (1) Use directional couplers to achieve broadband signal separation. Directional couplers mainly include directional couplers based on gradient coupled microstrip lines, which can achieve wide-band coverage. However, the coupled microstrip line solution has poor coverage for low frequencies and it is difficult to take into account both low and high frequency bands.

[0005] (2) A broadband bridge composed of a resistive power divider and a broadband balun can also achieve signal separation. However, since the broadband balun is mainly made of magnetic materials and the magnetic ring balun is relatively high, the bridge is large in size and its low-frequency characteristics are limited. In addition, the nonlinearity of the magnetic ring causes the bridge to be unstable and the indicators are significantly reduced.

[0006] It is difficult for existing solutions to simultaneously meet the requirements of having good indicators for both high and low frequencies. Existing technologies can no longer meet people's needs at this stage. Based on the current situation, there is an urgent need to improve existing technologies. Utility Model Content

[0007] The purpose of the utility model is to provide a broadband directional bridge based on a resistor power division network and a radio frequency transistor to solve the problems raised in the above background technology.

[0008] The utility model provides the following technical solution: a broadband directional bridge based on a resistor power division network and a radio frequency transistor, comprising: a test port P1, a signal source direct-through port P2, a signal detection port P3, a DC blocking capacitor C1, a 3dB attenuation network, a resistor power division network, a DC blocking capacitor C2, a 10dB attenuation network, a DC blocking capacitor C3, a DC blocking capacitor C4, a transistor power-on bias network, a transistor bypass network, a triode and a DC blocking capacitor C6; wherein,

[0009] The signal source pass-through port P2 is coupled to the input end of the 3dB attenuation network through the DC blocking capacitor C1, and the output end of the 3dB attenuation network is coupled to the input end of the resistor power division network. The output end of the resistor power division network is loaded with the test port P1. The resistor power division network has two output ends, wherein one output end is coupled to the input end of the 10dB attenuation network, and the other output end is coupled to the transistor bypass network through the DC blocking capacitor C4. The output end of the 10dB attenuation network is coupled to the transistor power-on bias network through the DC blocking capacitor C3. The transistor power-on bias network and the transistor bypass network are respectively loaded to the collector and emitter of the transistor. The output end of the transistor is coupled to the signal detection port P3 through the DC blocking capacitor C6.

[0010] Preferably, the 3dB attenuation network is composed of resistors R2 and R3 connected in parallel at both ends of resistor R1; and the other ends of resistors R2 and R3 are both grounded.

[0011] Preferably, the resistor power division network includes: a resistor R4, a resistor R5 and a resistor R6, wherein the resistor R4 and the resistor R5 are connected in parallel, and the resistor R5 is connected in series with the resistor R6 to ground.

[0012] Preferably, the 10 dB attenuation network is composed of a resistor R7 and a resistor R8 connected in series to the ground;

[0013] Preferably, the transistor power-on bias network includes: a power supply, a resistor R9, a resistor R10, a resistor R11 and a resistor R12; wherein the resistor R9 and the resistor R10 are connected in series to the ground, and the resistor R12 is connected in parallel between the resistor R9 and the resistor R10 through a resistor R11, and the power supply is coupled to the connection between the resistor R11 and the resistor R12.

[0014] Preferably, the transistor bypass network includes a resistor R13, a resistor R14 and a DC blocking capacitor C5, wherein the resistor R13 and the DC blocking capacitor C5 are connected to the ground in series, and the resistor R13 and the DC blocking capacitor C5 are connected to the ground in parallel with the resistor R14.

[0015] Preferably, the signal source pass-through port P2 is coupled to the resistor R1 through the DC blocking capacitor C1, and the other end of the resistor R1 is connected in series to the same-direction input ends of the resistors R4 and R5; the other end of the resistor R4 has two outputs, one of which is coupled to the test port P1 through the coupling DC blocking capacitor C4, and the other is coupled to the resistor R7; the other end of the resistor R5 is grounded through the coupling resistor R6.

[0016] Preferably, the other end of the resistor R7 is coupled to the DC blocking capacitor C3, and the DC blocking capacitor C3 has two outputs, one of which is coupled to the resistor R10, and the other end is coupled to the base of the transistor; the other end of the resistor R5 is coupled to the DC blocking capacitor C4, and the other end of the DC blocking capacitor C4 has three output ends, the first one is coupled to the emitter of the transistor, the second one is coupled to the DC blocking capacitor C5, and the third one is coupled to the resistor R14; the collector of the transistor is coupled to the signal detection port P3 through the DC blocking capacitor C6.

[0017] Preferably, the transistor power-on bias network, transistor bypass network, and triode form a triode amplifier circuit, wherein the transistor power-on bias network provides voltage and current for the triode, and the transistor bypass network is used to stabilize the state of the triode.

[0018] The utility model has the following beneficial effects:

[0019] (1) The utility model eliminates the magnetic ring balun to make the bridge planar and smaller in size; the use of a resistor power divider and a transistor circuit makes the overall circuit compact and can cover a low frequency band of several kHz, and the high frequency band can use the working frequency of the transistor itself.

[0020] (2) The utility model combines a resistor power division network with a radio frequency transistor to realize a directional bridge with wide-band coverage, and the overall circuit is more compact and stable.

[0021] (3) The maximum DC frequency range of the utility model can reach 44 GHz, which greatly improves the frequency coverage. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 This is a schematic diagram of the circuit structure of the utility model;

[0023] Figure 2 This is a schematic diagram of the circuit structure of the working process of the utility model;

[0024] Figure 3 This is a schematic diagram of the packaging structure of the utility model. DETAILED DESCRIPTION

[0025] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. All other embodiments obtained by ordinary technicians in the field of the utility model without creative work are within the scope of protection of the utility model.

[0026] refer to Figure 1The utility model provides the following technical solution: a broadband directional bridge based on a resistor power division network and a radio frequency transistor, comprising: a test port P1, a signal source through port P2, a signal detection port P3, a DC blocking capacitor C1, a 3dB attenuation network, a resistor power division network, a DC blocking capacitor C2, a 10dB attenuation network, a DC blocking capacitor C3, a DC blocking capacitor C4, a transistor power bias network, a transistor bypass network, a triode and a DC blocking capacitor C6; wherein,

[0027] The signal source pass-through port P2 is coupled to the input end of the 3dB attenuation network through the DC blocking capacitor C1, and the output end of the 3dB attenuation network is coupled to the input end of the resistor power division network, the output end of the resistor power division network is loaded with the test port P1, the resistor power division network has two output ends, wherein one output end is coupled to the input end of the 10dB attenuation network, and the other output end is coupled to the transistor bypass network through the DC blocking capacitor C4, the output end of the 10dB attenuation network is coupled to the transistor power-on bias network through the DC blocking capacitor C3, the transistor power-on bias network and the transistor bypass network are respectively loaded to the collector and emitter of the transistor, and the output end of the transistor is coupled to the signal detection port P3 through the DC blocking capacitor C6;

[0028] In this embodiment, the 3dB attenuation network is composed of resistors R2 and R3 connected in parallel at both ends of a resistor R1; and the other ends of the resistors R2 and R3 are both grounded.

[0029] In this embodiment, the resistor power division network includes: a resistor R4, a resistor R5 and a resistor R6, wherein the resistor R4 and the resistor R5 are connected in parallel, and the resistor R5 is connected in series with the resistor R6 to the ground.

[0030] In this embodiment, the 10 dB attenuation network is composed of a resistor R7 and a resistor R8 connected in series to the ground.

[0031] In this embodiment, the transistor power-on bias network includes: a power supply, a resistor R9, a resistor R10, a resistor R11 and a resistor R12; wherein the resistor R9 and the resistor R10 are connected in series to the ground, and the resistor R12 is connected in parallel between the resistor R9 and the resistor R10 through a resistor R11, and the power supply is coupled to the connection between the resistor R11 and the resistor R12.

[0032] In this embodiment, the transistor bypass network includes a resistor R13, a resistor R14 and a DC blocking capacitor C5, wherein the resistor R13 and the DC blocking capacitor C5 are connected to the ground in series, and the resistor R13 and the DC blocking capacitor C5 are connected to the ground in parallel with the resistor R14.

[0033] In this embodiment, the signal source pass-through port P2 is coupled to the resistor R1 through the DC blocking capacitor C1, and the other end of the resistor R1 is connected in series to the same-direction input ends of the resistors R4 and R5; the other end of the resistor R4 has two outputs, one of which is coupled to the test port P1 through the coupling DC blocking capacitor C4, and the other is coupled to the resistor R7; the other end of the resistor R5 is grounded through the coupling resistor R6.

[0034] In this embodiment, the other end of the resistor R7 is coupled to the DC blocking capacitor C3, and the DC blocking capacitor C3 has two outputs, one of which is coupled to the resistor R10, and the other end is coupled to the base of the transistor; the other end of the resistor R5 is coupled to the DC blocking capacitor C4, and the other end of the DC blocking capacitor C4 has three output ends, wherein the first one is coupled to the emitter of the transistor, the second one is coupled to the DC blocking capacitor C5, and the third one is coupled to the resistor R14; the collector of the transistor is coupled to the signal detection port P3 through the DC blocking capacitor C6.

[0035] In this embodiment, the transistor power-on bias network, the transistor bypass network, and the triode form a triode amplifier circuit, wherein the transistor power-on bias network provides voltage and current for the triode, and the transistor bypass network is used to stabilize the state of the triode.

[0036] refer to Figure 2 As an implementation mode of the utility model, the radio frequency signal emitted from the signal source is input through the signal source direct port P2, and the 3dB attenuation network implements 3dB attenuation on the signal input through the signal source direct port P2 and transmits it to the resistor power division network. The resistor power division network continues to separate the signal, and the signal reaches the test port P1 and is reflected back at the port. The 10dB attenuation of the signal is implemented through the 10dB attenuation network. The 10dB attenuation here is used to compensate for the amplification effect of the subsequent three-stage tube amplifier circuit; the DC blocking capacitor C3 and the DC blocking capacitor C4 isolate the DC signal and transmit it to the transistor, and after amplification, it reaches the detection port.

[0037] In this embodiment, the triode is a radio frequency transistor, and the package of the radio frequency transistor used is: 2mm×1.25mm×0.9mm, which effectively reduces the circuit space compared with the general volume of the radio frequency balun to 6GHz: for example, the package of the radio frequency balun EBG1-63-C012331 is: 3.8mm×4.2mm×2.8mm. It can be seen that the utility model uses radio frequency transistors to replace the radio frequency balun, and the package size is reduced by more than half. In the field of chip packaging technology, the size of the package determines the cost. It can be seen that the technical solution of the utility model has a modified cost-effectiveness.

[0038] In this implementation, after testing, the maximum frequency range of this technical solution can reach 44GHz, while the frequency range of the RF transformer EBG1-63-C012331 currently used in the market is 10MHz-6GHz. It can be seen that the utility model greatly improves the frequency coverage range.

[0039] In addition, in this embodiment, a differential high-frequency integrated circuit with an amplification function can be used to replace the transistor amplifier circuit composed of the transistor power bias network, the transistor bypass network, and the transistor, which can also achieve the technical effect of the utility model.

[0040] refer to Figure 3 , the remaining circuits except the test port P1, the signal source direct port P2, and the signal detection port P3 can be encapsulated inside a chip, which not only improves the integration, but also has a wider frequency coverage range and a more stable circuit.

[0041] Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art can still modify the technical solutions described in the aforementioned embodiments, or make equivalent substitutions for some of the technical features therein. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A broadband directional bridge based on a resistor power division network and a radio frequency transistor, characterized in that: It includes: test port P1, signal source direct port P2, signal detection port P3, DC blocking capacitor C1, 3dB attenuation network, resistor power dividing network, DC blocking capacitor C2, 10dB attenuation network, DC blocking capacitor C3, DC blocking capacitor C4, transistor power bias network, transistor bypass network, transistor and DC blocking capacitor C6; wherein, The 3dB attenuation network is composed of two ends of a resistor R1 connected in parallel with a resistor R2 and a resistor R3; and the other ends of the resistor R2 and the resistor R3 are both grounded; The resistor power division network includes: a resistor R4, a resistor R5 and a resistor R6, wherein the resistor R4 and the resistor R5 are connected in parallel, and the resistor R5 is connected in series with the resistor R6 to the ground; The 10dB attenuation network is composed of a resistor R7 and a resistor R8 connected in series to the ground; The transistor power-on bias network includes: a power supply, a resistor R9, a resistor R10, a resistor R11 and a resistor R12; wherein the resistor R9 and the resistor R10 are connected in series to the ground, and the resistor R12 is connected in parallel between the resistor R9 and the resistor R10 through a resistor R11, and the power supply is loaded to the connection between the resistor R11 and the resistor R12; The transistor bypass network includes: a resistor R13, a resistor R14 and a DC blocking capacitor C5, wherein the resistor R13 and the DC blocking capacitor C5 are connected to the ground in series, and the resistor R13 and the DC blocking capacitor C5 are connected to the ground in parallel with the resistor R14; The signal source pass-through port P2 is coupled to the input end of the 3dB attenuation network through the DC blocking capacitor C1, and the output end of the 3dB attenuation network is coupled to the input end of the resistor power division network, the output end of the resistor power division network is loaded with the test port P1, the resistor power division network has two output ends, one output end is coupled to the input end of the 10dB attenuation network, and the other output end is coupled to the transistor bypass network through the DC blocking capacitor C4; the output end of the 10dB attenuation network is coupled to the transistor power-on bias network through the DC blocking capacitor C3, the transistor power-on bias network and the transistor bypass network are respectively loaded to the collector and emitter of the transistor, and the output end of the transistor is coupled to the signal detection port P3 through the DC blocking capacitor C6.

2. A broadband directional bridge based on a resistor power division network and a radio frequency transistor according to claim 1, characterized in that: The signal source through port P2 is coupled to the resistor R1 through the DC blocking capacitor C1, and, The other end of the resistor R1 is connected in series to the same-direction input ends of the resistor R4 and the resistor R5; and, The other end of the resistor R5 is grounded via a coupling resistor R6.

3. A broadband directional bridge based on a resistor power division network and a radio frequency transistor according to claim 1, characterized in that: The resistor R4 has two outputs, one of which is coupled to the test port P1 through the DC blocking capacitor C4 , and the other is coupled to the resistor R7 .

4. The broadband directional bridge based on a resistor power division network and a radio frequency transistor according to claim 1, characterized in that: The resistor R7 is coupled to the DC blocking capacitor C3 , and the DC blocking capacitor C3 has two outputs, one of which is coupled to the resistor R10 , and the other is coupled to the base of the transistor.

5. The broadband directional bridge based on a resistor power division network and a radio frequency transistor according to claim 1, characterized in that: The resistor R5 is coupled to the DC blocking capacitor C4. The other end of the DC blocking capacitor C4 has three output ends, wherein the first output end is coupled to the emitter of the transistor, the second output end is coupled to the DC blocking capacitor C5, and the third output end is coupled to the resistor R14.

6. A broadband directional bridge based on a resistor power division network and a radio frequency transistor according to claim 1, characterized in that: The collector of the transistor is coupled to the signal detection port P3 via a DC blocking capacitor C6.

7. A broadband directional bridge based on a resistor power division network and a radio frequency transistor according to claim 1, characterized in that: The transistor power-on bias network, transistor bypass network, and triode constitute a triode amplifier circuit; wherein, The transistor power-on bias network provides voltage and current for the triode; and, The transistor bypass network is used to stabilize the state of the triode.

8. The broadband directional bridge based on a resistor power division network and a radio frequency transistor according to claim 1, characterized in that: The triode is a radio frequency transistor, and the package size of the radio frequency transistor used is: 2mm×1.25mm×0.9mm.

9. The broadband directional bridge based on a resistor power division network and a radio frequency transistor according to claim 1, characterized in that: The maximum frequency used by the directional bridge is 44 GHz.

10. The broadband directional bridge based on a resistor power division network and a radio frequency transistor according to claim 7, characterized in that: The triode amplifier circuit can be replaced by a differential high-frequency integrated circuit with an amplification function.

Images