Efficient impurity removal device for monocrystalline silicon wafer manufacturing

Abstract

The utility model discloses an efficient impurity removal device for monocrystalline silicon wafer manufacturing, and belongs to the technical field of efficient impurity removal devices for monocrystalline silicon wafer manufacturing. The efficient impurity removal device for monocrystalline silicon wafer manufacturing is characterized by comprising a bottom plate, supporting frames are fixedly connected to the top of the bottom plate, and electric telescopic rod bodies are fixedly connected to the tops of the two supporting frames; the efficient impurity removal device comprises two electric telescopic rod bodies, the tops of the two electric telescopic rod bodies are fixedly connected with bolting blocks, the opposite sides of the two bolting blocks are fixedly connected with an impurity removal assembly, the opposite sides of the two supporting frames are fixedly connected with a stirring barrel, and the front side of the stirring barrel communicates with a liquid outlet pipe. The problems that in the prior art, in the prior art, a single centrifugal structure is used for conducting impurity removal on monocrystalline silicon wafer raw materials mostly, in the single-time impurity removal process of monocrystalline silicon wafers, the size of a filter screen is fixed, impurities of different sizes in the monocrystalline silicon wafer raw materials are inconvenient to intercept, and the effect is poor are solved.

Description

Technical Field

[0001] The utility model relates to the technical field of high-efficiency impurity removal devices for manufacturing single crystal silicon slices, in particular to a high-efficiency impurity removal device for manufacturing single crystal silicon slices. Background Art

[0002] Monocrystalline silicon is a relatively active non-metallic element and an important component of crystalline materials. It is at the forefront of the development of new materials. Its main uses are as a semiconductor material and in solar photovoltaic power generation and heating.

[0003] In the Chinese utility model with announcement number CN214346418U, this utility model provides a high-efficiency impurity removal device for the production of single crystal silicon wafers, including a tank body, a mixing reaction chamber is arranged in the tank body, a chemical reagent dripping tank is fixedly arranged on one side of the top of the mixing reaction chamber, and an agitator is arranged inside, the top of the agitator passes through the tank body and is mechanically connected to the output shaft of the first drive motor, a liquid outlet pipe is arranged at the bottom of the mixing reaction chamber, a liquid separator plate is vertically arranged in the liquid outlet pipe, a first filter screen is fixedly arranged between both sides of the liquid separator plate and the inner wall of the tank body, a second filter screen is fixedly arranged below the first filter screen, a filter cartridge is arranged below the second filter screen, the bottom of the filter cartridge is fixedly connected to one end of the support shaft, the other end of the support shaft passes through the tank body and is mechanically connected to the output shaft of the second drive motor, the utility model has high uniformity of stirring and mixing, ensures sufficient chemical reaction during the impurity removal process, and has high impurity removal efficiency; the filtering effect is good, high-purity single crystal silicon is obtained, and the purity of single crystal silicon wafer processing is ensured.

[0004] Most of the high-efficiency impurity removal devices currently available in the market for manufacturing single-crystal silicon wafers use a single centrifugal structure to remove impurities from the single-crystal silicon wafer raw materials. During the process of removing impurities from the single-crystal silicon wafers at a time, the size of the filter is fixed, which is not convenient for intercepting impurities of different sizes in the single-crystal silicon wafer raw materials, and the effect is poor. Utility Model Content

[0005] The utility model provides a high-efficiency impurity removal device for manufacturing single crystal silicon wafers, aiming to solve the problem that most of the existing high-efficiency impurity removal devices for manufacturing single crystal silicon wafers remove impurities from single crystal silicon wafer raw materials through a single centrifugal structure, and in the process of removing impurities from the single crystal silicon wafers at a time, the size of the filter is fixed, which is inconvenient to intercept impurities of different sizes in the single crystal silicon wafer raw materials, resulting in poor effect.

[0006] The utility model is implemented as follows: a high-efficiency impurity removal device for manufacturing single crystal silicon wafers comprises a bottom plate, a support frame is fixedly connected to the top of the bottom plate, an electric telescopic rod body is fixedly connected to the tops of two support frames, a bolt block is fixedly connected to the tops of the two electric telescopic rod bodies, an impurity removal component is fixedly connected to the opposite side of the two bolt blocks, a stirring barrel is fixedly connected to the opposite side of the two support frames, a liquid outlet pipe is connected to the front side of the stirring barrel, and an electronic valve body is connected to the side of the liquid outlet pipe away from the stirring barrel;

[0007] The impurity removal component includes a top cover, the top of the top cover is fixedly connected to a motor body, the bottom of the motor body is fixedly connected to a stirring rod, the surface of the stirring rod is fixedly connected to a frame, the surface of the frame is fixedly connected to a filter screen, the surface of the stirring rod is fixedly connected to a top plate, the bottom of the top plate is fixedly connected to a centrifugal disk, the bottom of the centrifugal disk is fixedly connected to a screening net, the top of the top cover is connected to a feed hopper, and a feed port is opened on the top of the top plate.

[0008] In order to achieve the effect of increasing the sealing of the stirring barrel and the top cover, as a preferred high-efficiency impurity removal device for manufacturing single crystal silicon wafers of the utility model, a sealing groove is opened on the top of the stirring barrel, and a sealing block is fixedly connected to the bottom of the top cover, and the sealing block is arranged inside the sealing groove, and the side of the sealing block away from the top cover is in contact with the inner wall of the sealing groove.

[0009] In order to facilitate the removal of impurities from single crystal silicon wafer raw materials and then facilitate the user to observe the temperature inside the stirring barrel, a high-efficiency impurity removal device for single crystal silicon wafer manufacturing is preferably used in the utility model. Several heating rods are fixedly connected to the inside of the stirring barrel, and a temperature detector body is fixedly connected to the top of the top cover.

[0010] In order to achieve the effect of sealing the feed hopper and reducing the effect of dust entering the mixing barrel, as a preferred high-efficiency impurity removal device for manufacturing single crystal silicon wafers of the utility model, a sealing sleeve is provided inside the feed hopper, and a pull-out block is fixedly connected to the top of the sealing block.

[0011] In order to achieve the effect of auxiliary centrifugal disc to remove impurities from single crystal silicon wafers, as a preferred high-efficiency impurity removal device for manufacturing single crystal silicon wafers of the utility model, the top of the centrifugal disc is fixedly connected to an auxiliary frame, and the interior of the auxiliary frame is fixedly connected to an interception net.

[0012] In order to facilitate the user to observe the interior of the mixing barrel, as a preferred embodiment of the utility model, a high-efficiency impurity removal device for manufacturing single crystal silicon wafers is provided with a hole on the rear side of the mixing barrel, and a transparent glass frame is fixedly connected to the interior of the hole.

[0013] In order to scrape away the residue inside the stirring barrel, as a preferred high-efficiency impurity removal device for manufacturing single crystal silicon wafers of the utility model, a scraper rod is fixedly connected to the surface of the stirring rod, and the scraper rod is made of stainless steel.

[0014] In order to achieve the effect of reducing the position deviation of the bottom plate, as a preferred embodiment of the high-efficiency impurity removal device for manufacturing single crystal silicon wafers of the utility model, the bottom of the bottom plate is fixedly connected with an anti-skid pad, and the material of the anti-skid pad is silicone.

[0015] Compared with the prior art, the beneficial effects of the utility model are:

[0016] The high-efficiency impurity removal device for manufacturing single crystal silicon wafers can achieve the effect of supporting two support frames by arranging a bottom plate, can achieve the effect of supporting two electric telescopic rod bodies respectively by arranging two support frames, can achieve the effect of adjusting the heights of two bolt blocks respectively by arranging two electric telescopic rod bodies, can achieve the effect of adjusting the height of the impurity removal component by controlling the two electric telescopic rod bodies by arranging two bolt blocks, can achieve the effect of removing impurities from single crystal silicon wafer raw materials by arranging an impurity removal component, can achieve the effect of storing single crystal silicon wafer raw materials by arranging a stirring barrel, can achieve the effect of controlling the single crystal silicon wafer inside the stirring barrel by arranging a liquid outlet pipe and an electronic valve body. The raw materials can be guided out of the mixing barrel by setting the top cover, the motor body, the stirring rod, the frame, the filter, the top plate, the centrifugal disc, the screening net, the feed port and the feed hopper, so that the user can guide the single crystal silicon wafer raw materials into the mixing barrel through the feed hopper, and then the user controls the motor body to control the stirring rod, and then the stirring rod swings the frame, and then with the rotation of the frame, the impurities in the single crystal silicon wafer are intercepted by the filter, and then the single crystal silicon wafer raw materials after impurity removal are guided to the top of the top plate through the filter, and then guided into the centrifugal disc through the feed port opened at the top of the top plate, and then with the rotation of the centrifugal disc, the single crystal silicon wafer raw materials are guided out of the centrifugal disc through the screening net, thereby intercepting the impurities in the single crystal silicon wafer raw materials. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 The overall structure diagram of the high-efficiency impurity removal device for manufacturing single crystal silicon wafers of the utility model;

[0018] Figure 2 It is a structural schematic diagram of the impurity removal component in the utility model;

[0019] Figure 3 It is a schematic diagram of the cut-away of the local components in the utility model;

[0020] Figure 4This is a schematic diagram of the disassembly of the mixing barrel and the transparent glass frame in the utility model;

[0021] Figure 5 It is a schematic diagram of the structure of the motor body, the stirring rod and the scraping rod in the utility model;

[0022] Figure 6 It is a cross-sectional schematic diagram of the mixing barrel in the utility model;

[0023] Figure 7 It is a structural schematic diagram of the centrifugal disc, auxiliary frame and interception net in the utility model.

[0024] In the figure, 1, bottom plate; 2, support frame; 3, electric telescopic rod body; 4, bolting block; 5, impurity removal component; 501, top cover; 502, motor body; 503, stirring rod; 504, frame; 505, filter screen; 506, top plate; 507, centrifugal disc; 508, screening net; 509, feed hopper; 510, feed inlet; 6, stirring barrel; 7, liquid outlet pipe; 8, electronic valve body; 9, sealing groove; 10, sealing block; 11, heating rod; 12, sealing sleeve; 13, pull-out block; 14, auxiliary frame; 15, interception net; 16, holes; 17, transparent glass frame; 18, scraper rod; 19, anti-slip pad; 20, temperature detector body. DETAILED DESCRIPTION

[0025] In order to make the purpose, technical solution and advantages of the utility model more clear, the utility model is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the utility model and are not used to limit the utility model.

[0026] In the description of the present invention, it should be understood that the terms "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention. In addition, in the description of the present invention, "multiple" means two or more, unless otherwise clearly and specifically defined.

[0027] See also Figure 1-7The utility model provides a technical solution: an efficient impurity removal device for manufacturing single crystal silicon wafers, comprising a bottom plate 1, a support frame 2 is fixedly connected to the top of the bottom plate 1, an electric telescopic rod body 3 is fixedly connected to the tops of two support frames 2, a bolt block 4 is fixedly connected to the tops of the two electric telescopic rod bodies 3, an impurity removal component 5 is fixedly connected to the opposite side of the two bolt blocks 4, a stirring barrel 6 is fixedly connected to the opposite side of the two support frames 2, a liquid outlet pipe 7 is connected to the front side of the stirring barrel 6, and an electronic valve body 8 is connected to the side of the liquid outlet pipe 7 away from the stirring barrel 6;

[0028] The impurity removal component 5 includes a top cover 501, the top of the top cover 501 is fixedly connected to a motor body 502, the bottom of the motor body 502 is fixedly connected to a stirring rod 503, the surface of the stirring rod 503 is fixedly connected to a frame 504, the surface of the frame 504 is fixedly connected to a filter screen 505, the surface of the stirring rod 503 is fixedly connected to a top plate 506, the bottom of the top plate 506 is fixedly connected to a centrifugal disk 507, the bottom of the centrifugal disk 507 is fixedly connected to a screening net 508, the top of the top cover 501 is connected to a feed hopper 509, and a feed port 510 is provided at the top of the top plate 506.

[0029] In this embodiment: by providing the bottom plate 1, the effect of supporting the two support frames 2 can be achieved; by providing the two support frames 2, the effect of supporting the two electric telescopic rod bodies 3 can be achieved respectively; by providing the two electric telescopic rod bodies 3, the effect of adjusting the heights of the two bolting blocks 4 can be achieved respectively; by providing the two bolting blocks 4, the effect of controlling the two electric telescopic rod bodies 3 to adjust the height of the impurity removal component 5 can be achieved; by providing the impurity removal component 5, the effect of removing impurities from the single crystal silicon wafer raw material can be achieved; by providing the stirring barrel 6, the effect of storing the single crystal silicon wafer raw material can be achieved; by providing the liquid outlet pipe 7 and the electronic valve body 8, the effect of exporting the single crystal silicon wafer raw material inside the stirring barrel 6 can be achieved; by providing the top cover 501, the motor body 502, and the stirring rod 503, frame 504, filter screen 505, top plate 506, centrifugal disc 507, screening net 508, feed port 510 and feed hopper 509, the user can guide the single crystal silicon wafer raw material into the interior of the stirring barrel 6 through the feed hopper 509, and then the user controls the motor body 502 to control the stirring rod 503, and then the stirring rod 503 swings the frame 504, and then with the rotation of the frame 504, the impurities in the single crystal silicon wafer are intercepted by the filter screen 505, and then the single crystal silicon wafer raw material after impurity removal is guided to the top of the top plate 506 through the filter screen 505, and then guided into the interior of the centrifugal disc 507 through the feed port 510 opened at the top of the top plate 506, and then with the rotation of the centrifugal disc 507, the single crystal silicon wafer raw material is guided out of the interior of the centrifugal disc 507 through the screening net 508, so as to intercept the impurities in the single crystal silicon wafer raw material.

[0030] As a technical optimization solution of the utility model, a sealing groove 9 is opened on the top of the mixing barrel 6, and a sealing block 10 is fixedly connected to the bottom of the top cover 501. The sealing block 10 is arranged inside the sealing groove 9, and the side of the sealing block 10 away from the top cover 501 contacts the inner wall of the sealing groove 9.

[0031] In this embodiment, by providing the sealing groove 9 and the sealing block 10, the sealing effect of the mixing barrel 6 and the top cover 501 can be increased.

[0032] As a technical optimization solution of the present invention, a plurality of heating rods 11 are fixedly connected to the interior of the mixing barrel 6 , and a temperature detector body 20 is fixedly connected to the top of the top cover 501 .

[0033] In this embodiment: by setting up a plurality of heating rods 11 and a temperature detector body 20, it is possible to increase the temperature inside the mixing barrel 6 through the plurality of heating rods 11 and then detect the temperature inside the mixing barrel 6 through the temperature detector body 20.

[0034] As a technical optimization solution of the utility model, a sealing sleeve 12 is provided inside the feed hopper 509 , and a drawer block 13 is fixedly connected to the top of the sealing block 10 .

[0035] In this embodiment, by providing the sealing sleeve 12 and the pull-out block 13 , the feed hopper 509 can be sealed, thereby reducing the dust from entering the mixing barrel 6 .

[0036] As a technical optimization solution of the present invention, the top of the centrifugal disc 507 is fixedly connected with an auxiliary frame 14 , and the interior of the auxiliary frame 14 is fixedly connected with an interception net 15 .

[0037] In this embodiment, by providing the auxiliary frame 14 and the interception net 15, the centrifugal disc 507 can be assisted to remove impurities from the single crystal silicon wafer.

[0038] As a technical optimization solution of the present invention, a hole 16 is opened on the rear side of the mixing barrel 6, and a transparent glass frame 17 is fixedly connected to the interior of the hole 16.

[0039] In this embodiment, the hole 16 and the transparent glass frame 17 are provided to facilitate the user to observe the interior of the mixing barrel 6 .

[0040] As a technical optimization solution of the present invention, a scraper rod 18 is fixedly connected to the surface of the stirring rod 503, and the material of the scraper rod 18 is stainless steel.

[0041] In this embodiment, by providing the scraper rod 18 , the effect of scraping away the residue inside the mixing barrel 6 can be achieved.

[0042] As a technical optimization solution of the present invention, an anti-skid pad 19 is fixedly connected to the bottom of the base plate 1, and the material of the anti-skid pad 19 is silica gel.

[0043] In this embodiment, the anti-slip pad 19 is provided to reduce the position deviation of the bottom plate 1 .

[0044] Working principle: First, the user takes out the inside of the feed hopper 509 through the pull-out block 13 to the sealing sleeve 12, and then the user guides the single crystal silicon wafer raw material that needs to be removed into the inside of the stirring barrel 6, and then after the user guides the single crystal silicon wafer into the inside of the stirring barrel 6, the single crystal silicon wafer raw material will be guided into the inside of the frame 504, and then the user controls the motor body 502 to control the stirring rod 503, and then the stirring rod 503 swings the frame 504, and then the filter 505 fixedly connected to the inside of the frame 504 intercepts the impurities in the single crystal silicon wafer by the filter 505, and then the single crystal silicon wafer raw material that has been removed is guided to the top of the top plate 506 through the filter 505, and then the feed opened on the top of the top plate 506 The opening 510 is guided into the interior of the centrifugal disk 507, and then as the centrifugal disk 507 rotates, the single crystal silicon wafer raw material is guided out of the interior of the centrifugal disk 507 through the screening net 508, thereby intercepting impurities in the single crystal silicon wafer raw material. Then, the user uses the liquid outlet pipe 7 and the electronic valve in combination to guide the single crystal silicon wafer raw material that has been cleaned out into the interior of the stirring barrel 6, thereby achieving the effect of removing impurities from the single crystal silicon wafer raw material. When it is necessary to clean the interior of the stirring barrel 6, the user can control the two electric telescopic rod bodies 3 respectively, so that the two electric telescopic rod bodies 3 can adjust the heights of the two bolt blocks 4 respectively, and then adjust the height of the top cover 501, and then the user can clean the impurity removal structure.

[0045] The above are only preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A highly efficient impurity removal device for manufacturing single crystal silicon wafers, comprising a bottom plate (1), characterized in that: The top of the bottom plate (1) is fixedly connected to a support frame (2), the tops of the two support frames (2) are fixedly connected to an electric telescopic rod body (3), the tops of the two electric telescopic rod bodies (3) are fixedly connected to a bolting block (4), the opposite sides of the two bolting blocks (4) are fixedly connected to a debris removal component (5), the opposite sides of the two support frames (2) are fixedly connected to a stirring barrel (6), the front side of the stirring barrel (6) is connected to a liquid outlet pipe (7), and the side of the liquid outlet pipe (7) away from the stirring barrel (6) is connected to an electronic valve body (8); The impurity removal component (5) comprises a top cover (501), the top of the top cover (501) is fixedly connected to a motor body (502), the bottom of the motor body (502) is fixedly connected to a stirring rod (503), the surface of the stirring rod (503) is fixedly connected to a frame (504), the surface of the frame (504) is fixedly connected to a filter screen (505), the surface of the stirring rod (503) is fixedly connected to a top plate (506), the bottom of the top plate (506) is fixedly connected to a centrifugal disc (507), the bottom of the centrifugal disc (507) is fixedly connected to a screening net (508), the top of the top cover (501) is connected to a feed hopper (509), and a feed port (510) is provided at the top of the top plate (506).

2. The high-efficiency impurity removal device for manufacturing single crystal silicon wafers according to claim 1, characterized in that: A sealing groove (9) is provided on the top of the mixing barrel (6), and a sealing block (10) is fixedly connected to the bottom of the top cover (501). The sealing block (10) is arranged inside the sealing groove (9), and the side of the sealing block (10) away from the top cover (501) contacts the inner wall of the sealing groove (9).

3. The high-efficiency impurity removal device for manufacturing single crystal silicon wafers according to claim 1, characterized in that: A plurality of heating rods (11) are fixedly connected inside the mixing barrel (6), and a temperature detector body (20) is fixedly connected to the top of the top cover (501).

4. The high-efficiency impurity removal device for manufacturing single crystal silicon wafers according to claim 2, characterized in that: A sealing sleeve (12) is provided inside the feed hopper (509), and a drawing block (13) is fixedly connected to the top of the sealing block (10).

5. The high-efficiency impurity removal device for manufacturing single crystal silicon wafers according to claim 1, characterized in that: The top of the centrifugal disc (507) is fixedly connected to an auxiliary frame (14), and the interior of the auxiliary frame (14) is fixedly connected to an interception net (15).

6. The high-efficiency impurity removal device for manufacturing single crystal silicon wafers according to claim 1, characterized in that: A hole (16) is provided on the rear side of the mixing barrel (6), and a transparent glass frame (17) is fixedly connected to the interior of the hole (16).

7. The high-efficiency impurity removal device for manufacturing single crystal silicon wafers according to claim 1, characterized in that: A scraper rod (18) is fixedly connected to the surface of the stirring rod (503), and the scraper rod (18) is made of stainless steel.

8. The high-efficiency impurity removal device for manufacturing single crystal silicon wafers according to claim 1, characterized in that: The bottom of the base plate (1) is fixedly connected with an anti-skid pad (19), and the material of the anti-skid pad (19) is silica gel.

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