Semiconductor laser packaging device

Abstract

The utility model discloses a semiconductor laser packaging device, which comprises a tube socket, a tube pin arranged below the tube socket, and a tube tongue arranged on the tube socket, a heat sink and a laser chip are mounted on the tube tongue; a first connecting layer is arranged between the laser chip and the heat sink; a second connecting layer is arranged between the heat sink and the tube tongue; the change angles of the thermal resistance calculus curves of the first connecting layer, the heat sink, the second connecting layer and the tube base are designed, the interface heat conduction channel and the interface thermal resistance steepness are improved, the multi-interface heat conduction channel and the inclined interface thermal resistance steepness are formed, the voidage of the first connecting layer and the second connecting layer is reduced from 25-50% to 0-25%, and the thermal resistance steepness of the interface is improved. And the heating value of the emergent end surface, the thermal density and the cavity surface load of the cavity surface, the hole burning effect and the burning proportion of the laser are reduced, and the service life of the laser is prolonged from 10,000 hours to 50,000 hours (the luminous decay is less than 50%).

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor optoelectronic devices, in particular to a semiconductor laser packaging device. Background Art

[0002] Lasers are widely used in laser display, laser TV, laser projector, communication, medical treatment, weapons, guidance, ranging, spectral analysis, cutting, precision welding, high-density optical storage and other fields. There are many types of lasers, and the classification methods are also diverse, mainly including solid, gas, liquid, semiconductor and dye types of lasers; compared with other types of lasers, all-solid-state semiconductor ultraviolet lasers have the advantages of small size, high efficiency, light weight, good stability, long life, simple and compact structure, and miniaturization. There are great differences between lasers and nitride semiconductor light-emitting diodes. 1) Lasers are generated by stimulated radiation of carriers, with a small half-width of the spectrum and high brightness. The output power of a single laser can be in the W level, while nitride semiconductor light-emitting diodes are spontaneous radiation, and the output power of a single light-emitting diode is in the mW level; 2) The current density of the laser reaches KA / cm2, which is more than 2 orders of magnitude higher than that of nitride light-emitting diodes, resulting in stronger electron leakage, more serious Auger recombination, stronger polarization effect, more serious electron-hole mismatch, and more serious efficiency attenuation Droop effect; 3) Light-emitting diodes The tube spontaneously radiates incoherent light from high energy level to low energy level without any external influence, while the laser radiates stimulated transition. The energy of the induced photon should be equal to the difference in energy levels of the electron transition, generating completely identical coherent light of the photon and the induced photon; 4) Different principles: under the action of external voltage, the electron-hole transition of the light-emitting diode produces radiative recombination luminescence, while the laser needs the lasing conditions to be met before it can be lased. The carrier inversion distribution in the active area must be met. The stimulated radiation light oscillates back and forth in the resonant cavity, and the propagation in the gain medium amplifies the light. The threshold condition is met so that the gain is greater than the loss, and finally the laser is output. Nitride semiconductor ultraviolet lasers have the following problems: Thermal loss: The Stokes frequency shift loss formed by the photon energy difference between the pump light and the oscillating light is converted into heat, and the energy loss of the pump energy level to the laser upper energy level is not 1, which together generate a large amount of waste heat, making the laser temperature distribution uneven, causing thermal expansion and thermal stress distribution uneven, resulting in temperature quenching, laser breakage, thermal lens effect and stress birefringence effect; thermal lens produces a lens-like phenomenon in space, and the stress birefringence effect changes the polarization state of the incident light, causing the laser beam to depolarize and distort. There is a lot of heat generated by non-radiative recombination loss and free carrier absorption in the active area of ​​the laser chip. At the same time, the resistance of the epitaxial and chip materials will generate Joule heat loss and carrier absorption loss under current injection, and the chip material has low thermal conductivity and poor heat dissipation performance, which leads to an increase in the temperature of the active layer, and problems such as red shift of the laser wavelength, decreased quantum efficiency, reduced power, increased threshold current, shortened life and poor reliability. Utility Model Content

[0003] In order to solve the above technical problems, the utility model provides a semiconductor laser packaging device, comprising: a tube seat, a tube pin arranged under the tube seat, and a tube tongue installed on the tube seat; a heat sink and a laser chip are installed on the tube tongue; a first connection layer is provided between the laser chip and the heat sink; a second connection layer is provided between the heat sink and the tube tongue; the rising angle of the valley position of the thermal resistance calculus curve of the first connection layer toward the tube seat is α, the rising angle of the valley position of the thermal resistance calculus curve of the heat sink toward the tube seat is β, and the rising angle of the valley position of the thermal resistance calculus curve of the second connection layer toward the tube seat is γ, the rising angle of the valley position of the thermal resistance calculus curve of the tube base towards the tube base is θ, where: 10°≤α≤θ≤β≤γ≤85°; the rising angle of the valley position of the thermal resistance calculus curve of the first connection layer towards the laser chip is δ, the rising angle of the valley position of the thermal resistance calculus curve of the heat sink towards the laser chip is σ, the rising angle of the valley position of the thermal resistance calculus curve of the second connection layer towards the laser chip is φ, and the rising angle of the valley position of the thermal resistance calculus curve of the tube base towards the laser chip is ψ, where: 5°≤δ≤ψ≤σ≤φ≤80°.

[0004] Through the above technical scheme, the change angle of the thermal resistance calculus curve of the first connection layer, heat sink, second connection layer and tube holder is designed to improve the interface heat conduction channel and interface thermal resistance steepness, forming multiple interface heat conduction channels and inclined interface thermal resistance steepness.

[0005] Specifically, the rising angles of the valley positions of the thermal resistance calculus curves of the first connection layer, the heat sink, the second connection layer, and the tube base toward the tube base and the rising angles of the valley positions of the thermal resistance calculus curves of the first connection layer, the heat sink, the second connection layer, and the tube base toward the laser chip have the following relationship: 5°≤δ≤α≤ψ≤θ≤σ≤β≤φ≤γ≤85°.

[0006] And the thermal resistance calculus curve of the first connection layer has a function y=x 2 + sinx curve distribution, the thermal resistance calculus curve of the second connection layer has the function y=x 2 -sinx curve distribution, the thermal resistance calculus curve of the heat sink has the function y=ax 2 +bx+c curve distribution or Curve distribution, as well as the thermal resistance calculus curve of the socket has the function Curved distribution.

[0007] Through the above technical solution, the thermal conduction channel and the steepness of the interface thermal resistance are improved, multiple interface thermal conduction channels and inclined interface thermal resistance steepness are formed, and the void ratio of the first connection layer and the second connection layer is reduced from 25-50% to between 0-25%.

[0008] In addition, in order to realize the above-mentioned technical means, different material combinations are often used to manufacture the tube seat, tube pins, tube tongues and the first connection layer.

[0009] Specifically, the first connection layer and the second connection layer include: any one or more combinations of tin-gold, gold, tin, copper, silver, aluminum, gallium, iron, silicon, phosphorus, silver paste, titanium platinum, titanium, platinum, nickel, chromium, niobium, palladium, rhodium, nickel-gold or molybdenum.

[0010] The different materials selected make the first connection layer or the second connection layer have different thermal resistance values ​​and different thermal resistance calculus curve distributions.

[0011] Specifically, the materials of the tube tongue and the tube seat include any one or more combinations of copper, aluminum, silver, gold, chromium, nickel, carbon, stainless steel, palladium, titanium, zirconium, tantalum, niobium, vanadium, hafnium, gallium, iron, silicon, phosphorus, copper plated with nickel, copper plated with palladium, copper plated with nickel / palladium, iron plated with nickel, iron plated with palladium, iron plated with nickel / palladium, iron clad copper plated with nickel, iron clad copper plated with palladium, iron clad copper plated with nickel / palladium, copper plated with palladium / nickel, iron plated with palladium / nickel, iron clad copper plated with palladium / nickel, kovar plated with palladium, kovar plated with nickel, kovar plated with nickel / palladium, kovar plated with palladium / nickel, tungsten copper, beryllium oxide, kovar, iron, copper / iron / copper composite material, copper / iron composite material, copper / aluminum composite material, and iron clad copper. Different materials or material combinations are used to make the tube tongue and the tube seat have different thermal resistances.

[0012] Specifically, the heat sink material includes silicon carbide, copper / silicon carbide composite structure, copper / silicon carbide / gold-tin composite structure, copper / silicon carbide / copper composite structure, copper / aluminum nitride composite structure, copper / aluminum nitride / copper composite structure, copper / aluminum nitride / gold-tin composite structure, gold-tin, aluminum nitride, diamond, copper / diamond composite structure, copper / diamond / copper composite structure, copper / diamond / gold-tin composite structure, aluminum nitride single-sided copper clad, aluminum nitride double-sided copper clad, silicon carbide single-sided copper clad, silicon carbide double-sided copper clad, diamond single-sided copper clad, Diamond double-sided copper, titanium, zirconium, tantalum, niobium, vanadium, hafnium, aluminum nitride / zirconium / copper composite structure, aluminum nitride / tantalum / copper composite structure, aluminum nitride / niobium / copper composite structure, aluminum nitride / vanadium / copper composite structure, aluminum nitride / hafnium / copper composite structure, aluminum nitride / zirconium / niobium / copper composite structure, aluminum nitride / niobium / vanadium / copper composite structure, silicon, tungsten copper, titanium tungsten, copper, beryllium oxide, gallium nitride, gallium arsenide, indium phosphide, molybdenum, any one or more combinations thereof, using different materials or material combinations to make the heat sink have different thermal resistances.

[0013] Specifically, the laser chips include gallium nitride-based laser chips, gallium arsenide-based laser chips, indium phosphide-based laser chips, aluminum nitride-based laser chips and InGaN-based laser chips, and the wavelength of the laser chips covers 200nm to 3000nm.

[0014] In addition, the thickness of the laser chip is 50 to 300 um; the thickness of the heat sink is 100 to 500 um.

[0015] Specifically, the packaging forms of semiconductor laser packaging devices include: plastic packaging, To-CAN can packaging or COS packaging. Depending on the selected packaging method, the laser module will have different characteristics.

[0016] In summary, the beneficial effects of the utility model compared with the prior art are as follows: the change angle of the thermal resistance calculus curve of the first connection layer, the heat sink, the second connection layer, and the tube holder is designed, the thermal conduction channel of the interface and the steepness of the interface thermal resistance are improved, multiple interface thermal conduction channels and inclined interface thermal resistance steepness are formed, the void rate of the first connection layer and the second connection layer is reduced from 25-50% to between 0-25%, and the heat generation of the exit end face is reduced, the heat density and cavity surface load of the cavity surface are reduced, the hole burning effect and the burnout ratio of the laser are reduced, and the life of the laser is extended, so that the life of the laser (light decay is less than 50%) is increased from 10,000 hours to 50,000 hours. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The accompanying drawings are included to provide a further understanding of the embodiments and are incorporated into and constitute a part of this specification. The accompanying drawings illustrate the embodiments and are used together with the description to explain the principles of the utility model. It will be easy to recognize other embodiments and many expected advantages of the embodiments because they become better understood by reference to the following detailed description. Other features, objects and advantages of the present application will become more apparent by reading the detailed description of the non-limiting embodiments made with reference to the following drawings:

[0018] Figure 1 is a schematic structural diagram of a semiconductor laser packaging component according to an embodiment of the application;

[0019] Figure 2 is a thermal resistance calculus curve diagram of a semiconductor laser packaging component according to the first specific embodiment of the application;

[0020] Figure 3 is a thermal resistance calculus curve diagram of a semiconductor laser packaging component according to a second specific embodiment of the application;

[0021] Figure 4 is a thermal resistance calculus curve diagram of a semiconductor laser packaging component according to a third specific embodiment of the application;

[0022] Figure 5 is a thermal resistance calculus curve diagram of a semiconductor laser packaging component according to a fourth specific embodiment of the application;

[0023] Figure 6It is a thermal resistance calculus curve diagram of a semiconductor laser packaging component according to the fifth specific embodiment of the application.

[0024] The meaning of the numbers in the figure are: 100, pin; 101, tube seat; 102, tube tongue; 103, heat sink; 104, laser chip; 105, first connection layer; 106, second connection layer. DETAILED DESCRIPTION

[0025] In the description of the present invention, it should be noted that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation to the present invention.

[0026] In the present invention, unless otherwise clearly specified and limited, the terms "installation", "installation", "connection", "fixation" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0027] The present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are only used to explain the relevant utility model, rather than to limit the utility model. It is also necessary to explain that, for ease of description, only the parts related to the relevant utility model are shown in the accompanying drawings.

[0028] Figure 1 is a schematic structural diagram of a semiconductor laser packaging device according to an embodiment of the application, such as Figure 1As shown, a semiconductor laser packaging device comprises: a tube seat, a tube pin arranged under the tube seat, and a tube tongue installed on the tube seat; a heat sink and a laser chip are installed on the tube tongue; a first connection layer is provided between the laser chip and the heat sink; a second connection layer is provided between the heat sink and the tube tongue; the rising angle of the valley position of the thermal resistance calculus curve of the first connection layer toward the tube seat is α, the rising angle of the valley position of the thermal resistance calculus curve of the heat sink toward the tube seat is β, the rising angle of the valley position of the thermal resistance calculus curve of the second connection layer toward the tube seat is γ, and the thermal resistance calculus curve of the tube seat is The rising angle of the valley position of the integral curve toward the tube base is θ, where: 10°≤α≤θ≤β≤γ≤85°; the rising angle of the valley position of the thermal resistance calculus curve of the first connection layer toward the laser chip is δ, the rising angle of the valley position of the thermal resistance calculus curve of the heat sink toward the laser chip is σ, the rising angle of the valley position of the thermal resistance calculus curve of the second connection layer toward the laser chip is φ, and the rising angle of the valley position of the thermal resistance calculus curve of the tube base toward the laser chip is ψ, where: 5°≤δ≤ψ≤σ≤φ≤80°.

[0029] Through the above technical scheme, the change angle of the thermal resistance calculus curve of the first connection layer, heat sink, second connection layer and tube holder is designed to improve the interface heat conduction channel and interface thermal resistance steepness, forming multiple interface heat conduction channels and inclined interface thermal resistance steepness.

[0030] Specifically, the rising angles of the valley positions of the thermal resistance calculus curves of the first connection layer, the heat sink, the second connection layer, and the tube base toward the tube base and the rising angles of the valley positions of the thermal resistance calculus curves of the first connection layer, the heat sink, the second connection layer, and the tube base toward the laser chip have the following relationship: 5°≤δ≤α≤ψ≤θ≤σ≤β≤φ≤γ≤85°.

[0031] And the thermal resistance calculus curve of the first connection layer has a function y=x 2 + sinx curve distribution, the thermal resistance calculus curve of the second connection layer has the function y=x 2 -sinx curve distribution, the thermal resistance calculus curve of the heat sink has the function y=ax 2 +bx+c curve distribution or Curve distribution, as well as the thermal resistance calculus curve of the socket has the function Curved distribution.

[0032] Through the above technical solution, the thermal conduction channel and the steepness of the interface thermal resistance are improved, multiple interface thermal conduction channels and inclined interface thermal resistance steepness are formed, and the void ratio of the first connection layer and the second connection layer is reduced from 25-50% to between 0-25%.

[0033] Specifically, the first connection layer 105 and the second connection layer 106 include the first connection layer 105 and the second connection layer 106 include any one or more combinations of gold, tin, copper, silver, aluminum, gallium, iron, silicon, phosphorus, silver paste, titanium platinum, titanium, platinum, nickel, chromium, niobium, palladium, rhodium, nickel gold or molybdenum.

[0034] Due to the different materials, the first connection layer 105 or the second connection layer 106 has different thermal resistance values ​​and different thermal resistance calculus curve distributions.

[0035] Specifically, the materials of the tube tongue 102 and the tube base 101 include any one or more combinations of copper, aluminum, silver, gold, chromium, nickel, carbon, stainless steel, palladium, titanium, zirconium, tantalum, niobium, vanadium, hafnium, gallium, iron, silicon, phosphorus, copper-plated nickel, copper-plated palladium, copper-plated nickel / palladium, iron-plated nickel, iron-plated palladium, iron-plated nickel / palladium, iron-clad copper-plated nickel, iron-clad copper-plated palladium, iron-clad copper-plated nickel / palladium, copper-plated palladium / nickel, iron-plated palladium / nickel, iron-clad copper-plated palladium / nickel, kovar-plated palladium, kovar-plated nickel, kovar-plated nickel / palladium, kovar-plated palladium / nickel, tungsten copper, beryllium oxide, kovar, iron, copper / iron / copper composite material, copper / iron composite material, copper / aluminum composite material, and iron-clad copper. Different materials or material combinations are used to make the tube tongue 102 and the tube base 101 have different thermal resistances.

[0036] Specifically, the heat sink 103 material includes silicon carbide, copper / silicon carbide composite structure, copper / silicon carbide / gold-tin, copper / silicon carbide / copper composite structure, copper / aluminum nitride composite structure, copper / aluminum nitride / copper composite structure, copper / aluminum nitride / gold-tin composite structure, gold-tin, aluminum nitride, diamond, copper / diamond composite structure, copper / diamond / copper composite structure, copper / diamond / gold-tin composite structure, aluminum nitride single-sided copper, aluminum nitride double-sided copper, silicon carbide single-sided copper, silicon carbide double-sided copper, diamond single-sided copper, diamond The heat sink 103 can be coated with copper on both sides of the stone, titanium, zirconium, tantalum, niobium, vanadium, hafnium, aluminum nitride / zirconium / copper composite structure, aluminum nitride / tantalum / copper composite structure, aluminum nitride / niobium / copper composite structure, aluminum nitride / vanadium / copper composite structure, aluminum nitride / hafnium / copper composite structure, aluminum nitride / zirconium / niobium / copper composite structure, aluminum nitride / niobium / vanadium / copper composite structure, silicon, tungsten copper, titanium tungsten, copper, beryllium oxide, gallium nitride, gallium arsenide, indium phosphide, and molybdenum. Different materials or material combinations are used to make the heat sink 103 have different thermal resistances.

[0037] Specifically, the laser chip 104 includes a gallium nitride-based laser chip, a gallium arsenide-based laser chip, an indium phosphide-based laser chip, an aluminum nitride-based laser chip and an InGaN-based laser chip, and the wavelength of the laser chip 104 covers 200nm to 3000nm.

[0038] In addition, the thickness of the laser chip 104 is 50-300 um; the thickness of the heat sink 103 is 100-500 um.

[0039] Specifically, the packaging forms of semiconductor laser packaging devices include: plastic packaging, To-CAN can packaging or COS packaging. Depending on the selected packaging method, the laser module will have different characteristics.

[0040] It should be noted in advance that the thermal resistance calculus curve is drawn through thermal resistance testing, using thermal transient tester equipment for testing, and using the thermal measurement method of integrated circuits - electrical testing methods. The thermal resistance can test the total thermal resistance from the semiconductor laser chip to the environment. The thermal resistance is calculated using electrical power, and the thermal resistance and junction temperature can be tested.

[0041] In addition, the abscissa of the thermal resistance calculus curve is the thermal resistance (unit is [K / W]), and the ordinate is the first-order derivative of heat capacity to thermal resistance, expressed in K (unit is [W 2 s / K 2 ]), several dividing lines in the figure are interface positions of different structures, the width of the area corresponding to 104 on the horizontal axis represents the thermal resistance value of the laser chip 104, the width of the area corresponding to 105 on the horizontal axis represents the thermal resistance value of the first connection layer 105, the width of the area corresponding to 103 on the horizontal axis represents the thermal resistance value of the heat sink 103, the width of the area corresponding to 106 on the horizontal axis represents the thermal resistance value of the second connection layer 106, and the width of the area corresponding to 102 on the horizontal axis represents the thermal resistance value of the tube tongue 102. Since the heat capacity of the outside air is infinite, the end of the curve of the area corresponding to 101 is almost a vertical line perpendicular to the X-axis; in addition, the area with a small slope indicates that the area has low thermal conductivity or a small cross-sectional area, and the area with a large slope is the opposite; the inflection point of the peak is the decomposition of the two structures, the peak indicates that the area has a high thermal conductivity, that is, a structure with a large heat capacity and a small thermal resistance, and the trough indicates that the area has a low thermal conductivity, that is, a structure with a small heat melt and a large thermal resistance.

[0042] In the first specific embodiment, when To-φ1 and COS packaging are used, φ1 is the outer diameter of the tube base 101, and the outer diameter of the tube base 101 is 7-15mm; the thermal resistance of the laser module is 5-30K / W; the thermal resistance of the heat sink 103 is 1-5K / W, the thermal resistance of the tube tongue 102 is 1-10K / W, the thermal resistance of the tube base 101 is 2-10K / W, the thermal resistance of the first connection layer 105 is 0-5K / W, and the thermal resistance of the second connection layer 106 is 0-5K / W. The thermal resistance calculus curve of each component of the semiconductor laser packaging device using this embodiment is shown in FIG. Figure 2As shown, at this time, the rising angle of the valley position of the thermal resistance calculus curve of the first connection layer 105 toward the tube socket 101 is α, the rising angle of the valley position of the thermal resistance calculus curve of the heat sink 103 toward the tube socket 101 is β, the rising angle of the valley position of the thermal resistance calculus curve of the second connection layer 106 toward the tube socket 101 is γ, and the rising angle of the valley position of the thermal resistance calculus curve of the tube socket 101 toward the tube socket 101 is θ, wherein: 10°≤α≤θ≤β≤γ≤85°.

[0043] In the second specific embodiment, when the To-φ2 packaging form is adopted, φ2 is the outer diameter of the tube base 101, and the outer diameter of the tube base 101 is 2-7 mm; the thermal resistance of the laser module is 30-150K / W; the thermal resistance of the heat sink 103 is 5-30K / W, the thermal resistance of the tube tongue 102 is 2-30K / W, the thermal resistance of the tube base 101 is 10-50K / W, the thermal resistance of the first connection layer 105 is 0-10K / W, and the thermal resistance of the second connection layer 106 is 0-10K / W. The thermal resistance calculus curve of each component of the semiconductor laser packaging device using this embodiment is shown in FIG. Figure 3 As shown, at this time, the rising angle of the valley position of the thermal resistance calculus curve of the first connection layer 105 toward the laser chip 104 is δ, the rising angle of the valley position of the thermal resistance calculus curve of the heat sink 103 toward the laser chip 104 is σ, the rising angle of the valley position of the thermal resistance calculus curve of the second connection layer 106 toward the laser chip 104 is φ, and the rising angle of the valley position of the thermal resistance calculus curve of the stem 101 toward the laser chip 104 is ψ, wherein: 5°≤δ≤ψ≤σ≤φ≤80°.

[0044] In a third specific embodiment, the thermal resistance calculus curve of each component of the semiconductor laser packaging device using this embodiment is as follows: Figure 4As shown, at this time, the rising angle of the valley position of the thermal resistance calculus curve of the first connection layer 105 toward the tube base 101 is α, the rising angle of the valley position of the thermal resistance calculus curve of the heat sink 103 toward the tube base 101 is β, the rising angle of the valley position of the thermal resistance calculus curve of the second connection layer 106 toward the tube base 101 is γ, and the rising angle of the valley position of the thermal resistance calculus curve of the tube base 101 toward the tube base 101 is θ, wherein: 10°≤α≤θ≤β≤γ≤85°, the thermal resistance calculus curve of the first connection layer 105 The rising angle of the valley position of the integral curve toward the laser chip 104 is δ, the rising angle of the valley position of the thermal resistance calculus curve of the heat sink 103 toward the laser chip 104 is σ, the rising angle of the valley position of the thermal resistance calculus curve of the second connection layer 106 toward the laser chip 104 is φ, and the rising angle of the valley position of the thermal resistance calculus curve of the stem 101 toward the laser chip 104 is ψ, wherein: 5°≤δ≤ψ≤σ≤φ≤80°, and 5°≤δ≤α≤ψ≤θ≤σ≤β≤φ≤γ≤85°.

[0045] In the fourth specific embodiment, the thermal resistance calculus curve of each component of the semiconductor laser packaging device using this embodiment is as follows: Figure 5 As shown, at this time, the thermal resistance calculus curve of the first connection layer 105 has a function y=x 2 +sinx curve distribution, the thermal resistance calculus curve of the second connection layer 106 has a function y=x 2 -sinx curve distribution, the thermal resistance calculus curve of the heat sink 103 has a function y=ax 2 +bx+c curve distribution, and the thermal resistance calculus curve of the tube base 101 has the function Curved distribution.

[0046] In the fifth specific embodiment, the thermal resistance calculus curve of each component of the semiconductor laser packaging device using this embodiment is as follows: Figure 6 As shown, the thermal resistance integral curve of the first connection layer 105 has a function y=x 2 +sinx curve distribution, the thermal resistance calculus curve of the second connection layer 106 has a function y=x 2 -sinx curve distribution, the thermal resistance calculus curve of the heat sink 103 has the function The curve distribution, and the thermal resistance calculus curve of the tube base 101 has a function Curved distribution.

[0047] In the above five embodiments, the thermal resistance and thermal capacity of each component are designed according to the utility model, and the change angle of the thermal resistance calculus curve of the first connection layer, the heat sink, the second connection layer, and the tube seat is designed to improve the interface heat conduction channel and the interface thermal resistance steepness, form multiple interface heat conduction channels and inclined interface thermal resistance steepness, so that the void rate of the first connection layer and the second connection layer is reduced from 25% to 50% to between 0% and 25%, and the heat generation of the output end face is reduced, the heat density and cavity surface load of the cavity surface are reduced, the laser hole burning effect and the burning ratio are reduced, and the life of the laser is extended. After testing, the use of the present application solution can increase the life of the laser (light decay is less than 50%) from 10,000 hours to 50,000 hours.

[0048] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the utility model. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, unless they are contradictory.

[0049] Although the embodiments of the present invention have been shown and described above, it can be understood that the above embodiments are exemplary and cannot be understood as limitations of the present invention. Ordinary technicians in the field can change, modify, replace and modify the above embodiments within the scope of the present invention.

[0050] The specific implementation methods of the utility model described above do not constitute a limitation on the protection scope of the utility model. Any other corresponding changes and modifications made according to the technical concept of the utility model should be included in the protection scope of the claims of the utility model.

Claims

1. A semiconductor laser packaging device, characterized in that: include: A tube base, a tube pin arranged below the tube base, and a tube tongue mounted on the tube base; A heat sink and a laser chip are mounted on the tube tongue; a first connection layer is provided between the laser chip and the heat sink; a second connection layer is provided between the heat sink and the tube tongue; a rising angle of a valley position of the thermal resistance calculus curve of the first connection layer toward the tube seat is α, a rising angle of a valley position of the thermal resistance calculus curve of the heat sink toward the tube seat is β, a rising angle of a valley position of the thermal resistance calculus curve of the second connection layer toward the tube seat is γ, and a rising angle of a valley position of the thermal resistance calculus curve of the tube seat toward the tube seat is θ, wherein: 10°≤α≤θ≤β≤γ≤85°.

2. A semiconductor laser packaging device according to claim 1, characterized in that: The rising angle of the valley position of the thermal resistance calculus curve of the first connection layer toward the laser chip is δ, the rising angle of the valley position of the thermal resistance calculus curve of the heat sink toward the laser chip is σ, the rising angle of the valley position of the thermal resistance calculus curve of the second connection layer toward the laser chip is φ, and the rising angle of the valley position of the thermal resistance calculus curve of the tube holder toward the laser chip is ψ, wherein: 5°≤δ≤ψ≤σ≤φ≤80°.

3. A semiconductor laser packaging device according to claim 2, characterized in that: The rising angles of the valley positions of the thermal resistance calculus curves of the first connection layer, heat sink, second connection layer and tube base toward the tube base and the rising angles of the valley positions of the thermal resistance calculus curves of the first connection layer, heat sink, second connection layer and tube base toward the laser chip have the following relationship: 5°≤δ≤α≤ψ≤θ≤σ≤β≤φ≤γ≤85°.

4. The semiconductor laser packaging device according to claim 1, characterized in that: The thermal resistance calculus curve of the first connection layer has a function y=x 2 + sinx curve distribution, the thermal resistance calculus curve of the second connection layer has a function y=x 2 -sinx curve distribution, the thermal resistance calculus curve of the heat sink has the function y=ax 2 +bx+c curve distribution or The curve distribution, as well as the thermal resistance calculus curve of the tube holder have the function Curved distribution.

5. The semiconductor laser packaging device according to claim 1, characterized in that: The laser chips include gallium nitride-based laser chips, gallium arsenide-based laser chips, indium phosphide-based laser chips, aluminum nitride-based laser chips and InGaN-based laser chips, and the wavelength of the laser chips covers 200nm to 3000nm.

6. The semiconductor laser packaging device according to claim 1, characterized in that: The packaging forms of the semiconductor laser packaging device include: plastic packaging, To-CAN can packaging or COS packaging.

7. The semiconductor laser packaging device according to claim 1, characterized in that: The thickness of the laser chip is 50-300 um; the thickness of the heat sink is 100-500 um.

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