Silicon carbide polishing machine

Abstract

The silicon carbide polishing machine relates to the technical field of silicon carbide production and comprises a polishing machine shell and a drainage through hole, a shielding box door is hinged to the outer side of the polishing machine shell, a control panel is connected to one side of the polishing machine shell in a penetrating mode, and a polishing cooling mechanism is arranged in the polishing machine shell. The grinding and cooling mechanism grinds the surface of silicon carbide, meanwhile, dust generated by grinding is cleaned through liquid, the surface of the silicon carbide is cooled, a positioning mechanism is arranged over the grinding and cooling mechanism, and the positioning mechanism adsorbs one side of a silicon carbide disc and controls the descending height. And the polishing pressure of the silicon carbide disc is controlled. In the using process, two sets of silicon carbide can be positioned through the two sets of positioning discs, or the silicon carbide discs with large diameters are adsorbed through the two sets of positioning discs, and the silicon carbide discs with different diameters are positioned and polished according to the polishing requirements of the polishing machine.

Description

Technical Field

[0001] The utility model relates to the technical field of silicon carbide production, in particular to a silicon carbide polishing machine. Background Art

[0002] Silicon carbide wafers are single crystal slices formed by cutting, grinding, polishing, cleaning and other processes. As semiconductor substrate materials, silicon carbide wafers can be made into silicon carbide-based power devices and microwave radio frequency devices through epitaxial growth and device manufacturing.

[0003] During the polishing process of silicon carbide, the surface temperature of silicon carbide rises due to the high-speed friction between silicon carbide and the polishing part, and the polishing machine lacks a mechanism to cool down the silicon carbide. As a result, the fine dust generated by polishing will affect the polishing effect of silicon carbide during long-term polishing. In addition, when the polishing machine is in operation, it is difficult to adjust the polishing pressure according to the thickness of the silicon carbide disk, which affects the polishing effect of silicon carbide of different thicknesses. Summary of the invention

[0004] The purpose of the utility model is to provide a silicon carbide polishing machine to solve the above-mentioned defects caused by the prior art.

[0005] A silicon carbide polishing machine comprises a polishing machine housing and a drainage hole. A shielding box door is hinged on the outer side of the polishing machine housing. A control panel is connected through one side of the polishing machine housing. A polishing cooling mechanism is arranged inside the polishing machine housing. The polishing cooling mechanism polishes the surface of silicon carbide and uses liquid to clean dust generated by polishing, and cools the surface of silicon carbide. A positioning mechanism is arranged directly above the polishing cooling mechanism. The positioning mechanism adsorbs one side of a silicon carbide disk, controls the descending height according to the thickness of the silicon carbide disk, and controls the polishing pressure of the silicon carbide disk.

[0006] Preferably, the polishing and cooling mechanism includes a servo motor, a material turntable, a water tank and a spray pipe, the output end of the servo motor is connected to the material turntable, the outer side of the material turntable is rectangularly distributed with positioning holes, the material turntable is arranged directly below the polishing plate, a water tank is symmetrically arranged below the material turntable, the top of the water tank is connected to the spray pipe, the bottom end of the material turntable is connected to the output end of the servo motor, and the servo motor is installed inside the polishing machine case.

[0007] Preferably, the material turntable is connected to the bottom end of the grinding sheet through rectangularly distributed positioning holes.

[0008] Preferably, the positioning mechanism includes an electric cylinder, a positioning plate and a negative pressure suction cup, the electric cylinder is symmetrically arranged inside the polishing machine housing, the output end of the electric cylinder is connected to the positioning plate, and a negative pressure suction cup is arranged directly below the positioning plate.

[0009] Preferably, the material turntable is symmetrically provided with drainage grooves.

[0010] Preferably, the drainage holes are rectangularly distributed and opened through the outside of the material turntable.

[0011] Compared with the prior art, the utility model has the following advantages:

[0012] 1. During use, two groups of silicon carbide can be positioned by two groups of positioning plates, or silicon carbide plates with larger diameters can be adsorbed by two groups of positioning plates. Silicon carbide plates with different diameters can be positioned and polished according to the polishing requirements of the polishing machine. At the same time, the positioning plates are driven by electric cylinders to rise and fall vertically. The height of descent is adjusted according to the thickness of the silicon carbide plates, and the grinding pressure of the silicon carbide plates and grinding sheets is adjusted.

[0013] 2. The spray pipe sprays grinding liquid onto the fine-ground silicon wafer, and then the grinding liquid enters between the grinding ring and the silicon wafer. The grinding liquid immediately cools down the silicon wafer and the grinding ring, and at the same time moves the debris generated by grinding to the side away from the silicon wafer, avoiding the grinding debris remaining on the surface of the silicon wafer, causing damage to the silicon wafer surface, and then the debris and grinding liquid are collected through the drainage groove to prevent the liquid from flowing around and causing equipment pollution. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 It is a schematic diagram of the overall three-dimensional structure of the utility model.

[0015] Figure 2 It is a schematic diagram of the side view structure of the polishing machine housing in the utility model.

[0016] Figure 3 It is a partial cross-sectional structural schematic diagram of the polishing machine housing in the utility model.

[0017] Figure 4 It is a schematic diagram of the top view structure of the material turntable in the utility model.

[0018] Figure 5 It is a schematic diagram of the top view structure of the positioning plate in the utility model.

[0019] in:

[0020] 1. Polishing machine housing; 2. Shielding box door; 3. Control panel; 4. Servo motor; 5. Grinding and cooling mechanism; 6. Material turntable; 7. Water tank; 8. Spray pipe; 9. Electric cylinder; 10. Positioning plate; 11. Positioning mechanism; 12. Drainage hole; 13. Drainage groove; 14. Grinding disc; 15. Negative pressure suction cup; 16. Positioning hole. DETAILED DESCRIPTION

[0021] In order to make the technical means, creative features, objectives and effects achieved by the present invention easy to understand, the present invention is further described below in conjunction with specific implementation methods.

[0022] like Figures 1 to 5 As shown, the silicon carbide polishing machine includes a polishing machine housing 1 and a drainage hole 12. A shielding box door 2 is hinged on the outer side of the polishing machine housing 1. A control panel 3 is connected to one side of the polishing machine housing 1. A polishing cooling mechanism 5 is arranged inside the polishing machine housing 1. The polishing cooling mechanism 5 polishes the surface of the silicon carbide and cleans the dust generated by the polishing with liquid, and cools the surface of the silicon carbide. A positioning mechanism 11 is arranged directly above the polishing cooling mechanism 5. The positioning mechanism 11 adsorbs one side of the silicon carbide disk, controls the descending height according to the thickness of the silicon carbide disk, and controls the polishing pressure of the silicon carbide disk.

[0023] In this embodiment, the grinding and cooling mechanism 5 includes a servo motor 4, a material turntable 6, a water tank 7 and a spray pipe 8. The output end of the servo motor 4 is connected to the material turntable 6. The outer side of the material turntable 6 is rectangularly distributed with positioning holes 16. The material turntable 6 is arranged directly below the grinding plate 14. A water tank 7 is symmetrically arranged below the material turntable 6. The top of the water tank 7 is connected to the spray pipe 8. The bottom end of the material turntable 6 is connected to the output end of the servo motor 4. The servo motor 4 is installed inside the polishing machine housing 1. The silicon disk is cooled and dust-suppressed through the symmetrically arranged spray pipes 8 to prevent the escape of debris generated by polishing.

[0024] In this embodiment, the material turntable 6 is connected to the bottom end of the grinding plate 14 through rectangularly distributed positioning holes 16 , and the bottom end of the grinding plate 14 is locked through the positioning holes 16 opened on the surface of the material turntable 6 .

[0025] In this embodiment, the positioning mechanism 11 includes an electric cylinder 9, a positioning plate 10 and a negative pressure suction cup 15. The electric cylinder 9 is symmetrically arranged inside the polishing machine housing 1. The output end of the electric cylinder 9 is connected to the positioning plate 10. A negative pressure suction cup 15 is arranged directly below the positioning plate 10. The negative pressure suction cup 15 is used to adsorb the two groups of silicon disks and adjust the lowering height.

[0026] In this embodiment, the material turntable 6 is symmetrically provided with drainage grooves 13, and the drainage grooves 13 are used to collect and process the cooled liquid.

[0027] In this embodiment, the drainage holes 12 are rectangularly distributed and penetrate the outer side of the material turntable 6 , and the cooled liquid and debris are discharged through the drainage holes 12 .

[0028] This silicon carbide polishing machine includes the following work contents in practical application:

[0029] Step 1: The operator first injects the cooling or polishing liquid directly into the water tank 7, and turns on the electric cylinder 9, so that the electric cylinder 9 drives the positioning plate 10 and the negative pressure suction cup 15 to vertically lift and lower, so that the negative pressure suction cup 15 adsorbs the silicon plate, and places the grinding disc 14 on the surface of the material turntable 6, and inserts the bolt into the positioning hole 16, and positions the material turntable 6 and the grinding disc 14 through the bolt;

[0030] Step 2: Then, the electric cylinder 9 is turned on, and the negative pressure suction cup 15 and the silicon disk are brought into contact with the surface of the grinding sheet 14 by the electric cylinder 9. The servo motor 4 can be turned on, and the servo motor 4 is used to drive the material turntable 6 to rotate, and the material turntable 6 and the grinding sheet 14 are rotated, and the surface of the silicon disk is polished by the grinding sheet 14;

[0031] Step 3: When polishing the silicon disk, the water tank 7 injects liquid into the inside of the spray pipe 8 through the water pump, and the liquid cools the surface of the silicon disk and the material turntable 6 through the spray pipe 8, so that the cleaned liquid is directly injected into the inside of the drainage groove 13, and the operator can open the drainage through hole set below; 12, and the cleaned and cooled debris and liquid are directly discharged from the inside of the material turntable 6;

[0032] Step 4: When the polishing of the silicon disk is completed, the operator can close the shielding box door 2 and use the control panel 3 to adjust the descending height of the electric cylinder 9 to control the polishing force of silicon disks of different sizes. When the polishing of the silicon disk is completed, the shielding box door 2 is opened to release the negative pressure suction cup 15 from the surface of the silicon disk, so that the operator can separate the polished silicon disk or polish the other side of the silicon disk.

[0033] Therefore, the embodiments disclosed above are only illustrative in all aspects and are not exclusive. All changes within the scope of the present invention or within the scope equivalent to the present invention are included in the present invention.

Claims

1. Silicon carbide polishing machine, characterized by: The invention comprises a polishing machine housing (1) and a drainage hole (12). A shielding box door (2) is hingedly connected to the outer side of the polishing machine housing (1). A control panel (3) is connected through one side of the polishing machine housing (1). A polishing cooling mechanism (5) is arranged inside the polishing machine housing (1). The polishing cooling mechanism (5) polishes the surface of silicon carbide and uses liquid to clean dust generated by polishing, and cools the surface of silicon carbide. A positioning mechanism (11) is arranged directly above the polishing cooling mechanism (5). The positioning mechanism (11) adsorbs one side of the silicon carbide disk, controls the descending height according to the thickness of the silicon carbide disk, and controls the polishing pressure of the silicon carbide disk.

2. The silicon carbide polishing machine according to claim 1, characterized in that: The polishing and cooling mechanism (5) comprises a servo motor (4), a material turntable (6), a water tank (7) and a spray pipe (8); the output end of the servo motor (4) is connected to the material turntable (6); the outer side of the material turntable (6) is provided with positioning holes (16) in a rectangular shape; the material turntable (6) is arranged directly below the polishing sheet (14); a water tank (7) is symmetrically arranged below the material turntable (6); the top end of the water tank (7) is connected to the spray pipe (8); the bottom end of the material turntable (6) is connected to the output end of the servo motor (4); and the servo motor (4) is installed inside the polishing machine housing (1).

3. The silicon carbide polishing machine according to claim 2, characterized in that: The material turntable (6) is connected to the bottom end of the grinding plate (14) via rectangularly distributed positioning holes (16).

4. The silicon carbide polishing machine according to claim 1, characterized in that: The positioning mechanism (11) comprises an electric cylinder (9), a positioning plate (10) and a negative pressure suction cup (15); the electric cylinder (9) is symmetrically arranged inside the polishing machine housing (1); the output end of the electric cylinder (9) is connected to the positioning plate (10); and the negative pressure suction cup (15) is arranged directly below the positioning plate (10).

5. The silicon carbide polishing machine according to claim 3, characterized in that: The material turntable (6) is symmetrically provided with drainage grooves (13).

6. The silicon carbide polishing machine according to claim 1, characterized in that: The drainage holes (12) are arranged in a rectangular shape and penetrate the outside of the material turntable (6).

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