Lamp assembly for semiconductor processing device, reflecting plate and semiconductor processing device

Abstract

The utility model discloses a lamp assembly used for a semiconductor processing device, a reflecting plate and the semiconductor processing device, the lamp assembly comprises a reflecting plate, the reflecting plate comprises a central area, a plurality of linear lamps are arranged around the central area and along the circumferential direction of the reflecting plate, each linear lamp is provided with a first end and a second end, and the first end and the second end are connected with each other. The second end of the previous linear lamp arranged close to the central area is adjacent to the first end of the next linear lamp, and at least a plurality of adjacent linear lamps are staggered in circular projection areas formed on the surface of the rotating wafer. According to the utility model, the arrangement of the lamp assemblies increases the number of heating areas which can be flexibly regulated and controlled in the technological process, ensures the uniformity of wafer temperature distribution and the quality of film deposition in the technological process, corrects the thermodetector, and ensures the reliability of the temperature measurement result of each area of the wafer.

Description

Technical Field

[0001] The utility model relates to the field of semiconductor equipment, in particular to a lamp assembly, a reflection plate and a semiconductor processing device used for a semiconductor processing device. Background Art

[0002] In the semiconductor manufacturing industry, chemical vapor deposition (CVD) is a well-known process for forming thin film materials on substrates (such as silicon wafers). In the CVD process, gaseous molecules of the material to be deposited are provided to the wafer to form a thin film of the material on the wafer through a chemical reaction. The formed film can be polycrystalline, amorphous or epitaxial. Typically, the CVD process is performed at an elevated temperature to accelerate the chemical reaction and produce a high-quality film.

[0003] During the CVD process, one or more substrates are placed on a substrate support within a reaction chamber. For example, the substrate can be a wafer and the substrate support can be a susceptor. Both the substrate and the susceptor are heated to the desired temperature. In a typical wafer processing step, a reactant gas is passed over the heated wafer, resulting in the chemical vapor deposition (CVD) of a thin layer of the desired material on the wafer. If the deposited layer has the same crystal structure as the underlying silicon wafer, it is called an epitaxial layer, sometimes also called a single crystal layer. Through subsequent processes, these deposited layers are made into integrated circuits, producing tens of thousands to thousands or even millions of integrated circuit devices, depending on the size of the wafer and the complexity of the circuit.

[0004] Various process parameters must be carefully controlled to ensure high-quality deposited layers produced in semiconductor processing. One critical parameter is the temperature of the wafer during each processing step of wafer processing. For example, in the CVD process, the wafer temperature determines the rate of material deposition on the wafer because the deposition gas reacts and deposits on the wafer at a specific temperature. If the temperature on the surface of the wafer varies, uneven deposition of the film occurs and the physical properties on the wafer will be uneven. In the silicon epitaxial deposition process, due to the need for reaction temperature and heating rate, heating lamps are usually used to heat the wafer through the reaction chamber wall made of quartz. It is usually necessary to set up a circle of heating lamps to heat the entire wafer. However, during the deposition process, there is still a lack of flexible means to adjust the uneven temperature distribution in local areas of the wafer. In addition, during the deposition process, a thermometer is usually used to perform real-time temperature detection on multiple locations of the wafer to ensure the uniformity of temperature distribution across the entire wafer. However, due to changes in the emissivity of the thin film deposited on the wafer, the sensitivity of the thermometer, and the environment in the reaction chamber, there is inevitably a deviation between the temperature value measured by the thermometer and the actual temperature value of the corresponding area of ​​the wafer. Utility Model Content

[0005] The purpose of the utility model is to provide a lamp assembly, a reflective plate and a semiconductor processing device for a semiconductor processing device. By setting up a spirally arranged linear heating lamp, the number of heating areas that can be flexibly adjusted by the heating lamp during the process is increased, thereby ensuring the uniformity of wafer temperature distribution and the quality of thin film deposition during the process. At the same time, the thermometer is calibrated to ensure the reliability of the temperature measurement results of each area of ​​the wafer.

[0006] In order to achieve the above object, the utility model is implemented through the following technical solutions:

[0007] The utility model provides a lamp assembly for a semiconductor processing device, the lamp assembly is used to heat a rotating wafer, and is characterized in that the lamp assembly comprises:

[0008] A reflective plate, the reflective plate comprising a central area, a plurality of linear lamps arranged around the central area and along the circumference of the reflective plate, each of the linear lamps having a first end and a second end, the second end of a preceding linear lamp arranged close to the central area being adjacent to the first end of a succeeding linear lamp, and at least a plurality of adjacent linear lamps forming partially staggered circular projection areas on the surface of a rotating wafer.

[0009] Optionally, the central area is provided with a central temperature measurement area for temperature measurement.

[0010] Optionally, a central heating lamp is disposed in the central area, and the central heating lamp is at a first distance from the central temperature measurement area.

[0011] Optionally, a groove is provided on the reflective plate, and the linear lamp and the central heating lamp are arranged in the groove.

[0012] Optionally, the central heating lamp is a linear lamp.

[0013] Optionally, the groove includes a central groove and a peripheral groove, the central groove is used to accommodate the central heating lamp, and the peripheral groove is used to accommodate a plurality of the linear lamps.

[0014] Optionally, the peripheral groove is a continuous shape.

[0015] Optionally, the groove includes a central groove and a peripheral groove, the peripheral groove includes a plurality of peripheral sub-grooves, and each of the peripheral sub-grooves is used to accommodate one or more of the linear lamps.

[0016] Optionally, each of the linear lamps is arranged in a spiral line along the reflective plate.

[0017] Optionally, the center position of each of the linear lamps is arranged in a spiral line along the reflective plate.

[0018] Optionally, the peripheral groove forms a spiral region, and the linear lamp is arranged in the spiral region.

[0019] Optionally, the linear lamp disposed at the starting point of the spiral line has a second distance from the central temperature measurement area, and the second distance is greater than the first distance.

[0020] Optionally, the diameter of the central temperature measurement area ranges from 10mm to 80mm.

[0021] The utility model also provides a reflective plate, wherein a groove is provided on the reflective plate, wherein the groove forms a spiral area for accommodating a plurality of linear lamps, wherein the reflective plate is further provided with mounting through holes for mounting the plurality of linear lamps, and a fixing plate for fixing the plurality of linear lamps is further provided on the outer side of the reflective plate.

[0022] The utility model also provides a semiconductor processing device, comprising the lamp assembly, and the semiconductor processing device further comprises:

[0023] A reaction chamber is arranged below the reflective plate and the linear lamp, the reaction chamber is made of a transparent material, a base is arranged in the reaction chamber, the base rotates under the drive of a pivot connected to the base, the lamp assembly heats the wafer placed on the base through the reaction chamber, and at least a plurality of adjacent linear lamps form partially staggered circular projection areas on the surface of the rotating wafer in the vertical direction.

[0024] Optionally, the semiconductor processing device further includes a first thermometer disposed in a central temperature measurement area of ​​the reflective plate, and the first thermometer is used to measure the temperature of the center of the wafer.

[0025] Optionally, the semiconductor processing device further comprises a second thermometer disposed on the back side of the susceptor, wherein the second thermometer is used to measure the temperature at the center of the back side of the susceptor.

[0026] Optionally, the second thermometer is also used to calibrate the first thermometer.

[0027] Compared with the prior art, the utility model has the following advantages:

[0028] The utility model provides a lamp assembly for a semiconductor processing device, each of which is a linear lamp. The tubular lamp body of each linear lamp is arranged on the inner side of a reflective plate to heat the wafer. The two electrode ends of each linear lamp serving as the cold end are arranged on the outer side of a fixed plate, so that there is no cold spot when each linear lamp heats the wafer, thereby ensuring the uniformity of wafer heating.

[0029] The utility model provides a lamp assembly for a semiconductor processing device, wherein each linear lamp is arranged in a spiral line along the reflective plate, and the circular projection areas formed by each linear lamp on the surface of the rotating wafer do not completely overlap, so that the radial areas of the wafer that can be covered by each linear lamp are not completely the same, thereby increasing the number of heating areas that can be flexibly adjusted by the linear lamp. In addition, the use of linear lamps covers a larger heating range than traditional point lamps, reduces the number of lamps that need to be arranged on the reflective plate, and reduces production costs.

[0030] The utility model also calibrates the first thermometer for measuring the center position of the wafer by means of the second thermometer arranged on the back of the base, thereby ensuring the reliability of the test result of the thermometer. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 A simplified schematic diagram of a semiconductor processing device provided by the utility model;

[0032] Figure 2 A top view of a lamp assembly for a semiconductor processing device according to the utility model;

[0033] Figure 3 It is a side view of a lamp assembly for a semiconductor processing device of the utility model;

[0034] Figure 4 It is the circular ring projection area formed by the linear lamp of the utility model on the rotating wafer;

[0035] Figure 5 A simplified schematic diagram of a linear lamp arrangement method according to an embodiment of the utility model;

[0036] Figure 6 A simplified schematic diagram of a linear lamp arrangement of another embodiment of the utility model;

[0037] Figure 7 It is a schematic diagram of the structure of the linear lamp of the utility model. DETAILED DESCRIPTION

[0038] In order to make the purpose, technical solution and advantages of the embodiment of the utility model clearer, the technical solution in the embodiment of the utility model will be clearly and completely described below in conjunction with the drawings in the embodiment of the utility model. Obviously, the described embodiment is a part of the embodiment of the utility model, not all of the embodiments. Based on the embodiment of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0039] It should be noted that, in this article, the terms "include", "comprises", "has" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, article or terminal device including a series of elements includes not only those elements, but also includes other elements not explicitly listed, or also includes elements inherent to such process, method, article or terminal device. In the absence of further restrictions, the elements defined by the sentence "includes..." or "comprising..." do not exclude the existence of other elements in the process, method, article or terminal device including the elements.

[0040] It should be noted that the drawings are all in very simplified form and use inaccurate ratios, and are only used to conveniently and clearly assist in explaining the purpose of an embodiment of the utility model.

[0041] like Figure 1 As shown, a semiconductor processing device provided by the utility model comprises: an upper chamber cover 11 and a lower chamber cover 16, both of which are made of transparent materials, and the upper chamber cover 11 and the lower chamber cover 16 and the flange used to connect the two together constitute the reaction chamber of the semiconductor processing device. A base is arranged in the reaction chamber, and a wafer W is placed on the base. The base rotates under the drive of a pivot connected to the base, and drives the wafer to rotate. The base divides the reaction chamber into two parts: a process area A located above the base and a purification area B located below the base. An air inlet 14 and an air outlet 15 opposite to the air inlet are arranged on the flange. When the process is carried out, the process gas (such as silane, germane) enters the process area A in the reaction chamber from the air inlet 14, and leaves the reaction chamber from the air outlet 15 after reacting on the surface of the wafer to form a deposit. At the same time, the purification gas (such as hydrogen, hydrogen chloride) enters the purification area B in the reaction chamber from the gas inlet 14 and leaves the reaction chamber from the gas outlet 15 to prevent the process gas from entering the purification area B and depositing on the back of the base and the wall of the reaction chamber.

[0042] A lamp assembly for heating the wafer and the base is arranged above the upper chamber cover 11. The lamp assembly includes: a plurality of linear lamps 13, and the plurality of linear lamps 13 heat the wafer through the upper chamber cover 11. The linear lamps 13 are arranged in a groove on the reflective plate 12, and the groove is used to gather the light emitted by each linear lamp 13 to improve the heating efficiency of each linear lamp 13. An opening is also arranged on the reflective plate, and a first thermometer 18 is arranged at the opening, and the first thermometer 18 is used to measure the temperature at the center position of the wafer. In order to obtain the real-time temperature of multiple positions of the wafer, other openings can also be arranged on the reflective plate 12, so as to set thermometers at multiple positions and perform real-time temperature measurement on multiple positions of the wafer.

[0043] A plurality of heating lamps 17 are also provided below the lower chamber cover 16, and the plurality of heating lamps 17 heat the base through the lower chamber cover 16. It is understandable that the plurality of heating lamps 17 can also be provided in the groove of the reflective plate. A second thermometer 19 is also provided below the lower chamber cover 16, and the second thermometer 19 is used to measure the temperature at the center position of the back of the base.

[0044] The first thermometer 18 measures the temperature at the center of the front side of the wafer, and measures the surface temperature of the wafer by receiving the energy radiated by the wafer. However, the flow of process gas in the reaction chamber will affect the test light path of the first thermometer 18 (infrared is an invisible light), and the deposits attached to the upper chamber cover 11 will also affect the intensity of the radiation energy received by the first thermometer 18, which usually causes the temperature value measured by the first thermometer 18 to be less than the actual temperature value of the wafer surface. On the other hand, during the process, as the thickness of the film deposited on the surface of the wafer increases, the emissivity of the wafer will also change accordingly, resulting in inaccurate results measured by the first thermometer 18.

[0045] Therefore, it is necessary to calibrate the measurement result of the first thermometer 18. Specifically, since the airflow in the center of the wafer is stable and is less affected by the environmental changes in the reaction chamber, the center of the wafer is selected as the calibration area for calibrating the first thermometer 18 corresponding to the calibration area. The second thermometer 19 is arranged below the reaction chamber as a calibration thermometer to measure the temperature of the back side of the central area of ​​the base directly below the calibration area. In the utility model, the first thermometer 18 and the second thermometer 19 are infrared thermometers with an operating band of 2 microns. 4.5 microns. Since there is less process gas entering the purification area B below the reaction chamber, there is relatively less deposit on the back of the susceptor and the lower chamber cover 16, and the second thermometer 19 can obtain a more realistic measurement value. The susceptor and the wafer are made of different materials, so the measurement values ​​of the first thermometer 18 and the second thermometer 19 will have a first difference. When the first difference does not exceed the set first temperature difference threshold, it is considered that the measurement result of the first thermometer 18 is reliable.

[0046] Please also refer to Figure 2 and Figure 3 , which is a schematic diagram of the structure of a lamp assembly of the utility model. The lamp assembly includes: a reflector 21, the reflector 21 includes a central area C and a peripheral area D surrounding the central area C, and a plurality of linear lamps 23 are arranged in the peripheral area D and arranged along the circumference of the reflector 21.

[0047] Each linear lamp 23 heats the wafer through the upper chamber cover 11. During the process, uneven heating will inevitably occur locally on the wafer, and there may be local cold or hot areas at different positions of the wafer. Therefore, a lamp assembly that can flexibly control the temperature during the process and adjust the uneven temperature in local areas is needed. In the lamp assembly provided by the utility model, a plurality of linear lamps 23 are arranged in the peripheral area D, each of the linear lamps 23 has a first end and a second end, and the second end of the previous linear lamp arranged near the central area C is adjacent to the first end of the next linear lamp, and at least a plurality of adjacent linear lamps 23 form a partially staggered circular projection area on the surface of the rotating wafer.

[0048] It should be noted that the two adjacent linear lamps described in the present invention refer to two linear lamps with the smallest circumferential difference within the same radius.

[0049] Please refer to Figure 4 , are two adjacent linear lamps 23(1) and 23(2). Since the wafer W rotates under the drive of the base, with the wafer W as the center, during the rotation of the wafer W, the linear lamp 23(1) forms a circular projection area P1 on the wafer W, and the linear lamp 23(2) forms a circular projection area P2 on the wafer W, and P1 and P2 are partially staggered.

[0050] In some embodiments, please refer to Figure 5 Each linear lamp 23' is arranged in a spiral line S' along the reflector 21. The circular projection areas formed by each linear lamp 23' on the surface of the rotating wafer are not completely the same, and there are partially staggered areas, thereby increasing the number of heating areas that can be flexibly adjusted by the lamp assembly.

[0051] Optionally, each linear lamp 23' may be orthogonal to the spiral line S', or may be consistent with the tangent direction of the spiral line S'. In order to reduce the complexity of component processing, the angle between each linear lamp 23' and the spiral line S' is not greater than 20°. The length of the tubular lamp tube of each linear lamp 23' may be the same or different. The rotation direction of each linear lamp 23' on the spiral line S' may be the same or different.

[0052] In some other embodiments, please refer to Figure 6 The center position of each linear lamp 23" is arranged in a spiral line S" along the reflector. The center position is the midpoint H between the two end points 27" of the linear lamp 23". The circular projection area formed by each linear lamp 23" on the surface of the rotating wafer is not completely the same, and there are partially staggered areas, thereby increasing the number of heating areas that can be flexibly adjusted by the lamp assembly.

[0053] Optionally, each linear lamp 23" may be orthogonal to the spiral line S" or may be consistent with the tangent direction of the spiral line S". In order to reduce the complexity of component processing, the angle between each linear lamp 23" and the spiral line S" is not greater than 20°. The length of the tubular lamp tube of each linear lamp 23" may be the same or different. The rotation direction of each linear lamp 23 on the spiral line S" may be the same or different.

[0054] In order to compensate for the cold or hot area that may appear at the center of the wafer, the center area C of the reflector is also provided with a central heating lamp 22 for heating and controlling the temperature at the center of the wafer. Optionally, the central heating lamp 22 may also be a linear lamp or a point lamp.

[0055] In order to gather the light of each heating lamp to improve the heating efficiency, the reflector is further provided with grooves, which include a central groove 24 and a peripheral groove 25. The central groove 24 is used to accommodate the central heating lamp 22, and the peripheral groove 25 is used to accommodate a plurality of linear lamps 23.

[0056] In some embodiments, the peripheral groove 25 is a continuous shape. The peripheral groove 25 forms a spiral area, and the plurality of linear lamps 23 are arranged in the spiral area. The spiral area can have the same width or a gradual width. The spiral area extends to both sides with the spiral line S' (S") as the center to accommodate the linear lamps. Optionally, the width of the spiral area can be 20 mm or 50 mm, but the present invention is not limited thereto.

[0057] In some embodiments, the inner surface of the peripheral groove 25 may have different curvatures to provide different reflection angles. Thus, based on the shape of the lamp arrangement, the curvature of the inner surface of the groove at the corresponding position of each linear lamp 23 may be adjusted to provide different illumination angles for each linear lamp 23.

[0058] In some embodiments, the reflective plate 21 is made of a reflective material such as aluminum or steel. The inner surfaces of the peripheral groove 25 and the central groove 24 may also be coated with a coating that enhances reflectivity, such as a gold coating. The peripheral groove 25 and the central groove 24 may have a reflectivity greater than 90%, optionally greater than about 98%.

[0059] In some other embodiments, the peripheral groove 25 includes a plurality of peripheral sub-grooves (not shown in the figure), each of which is used to accommodate one or more of the linear lamps 23. Each of the peripheral sub-grooves can be arranged in a spiral shape along the reflective plate 21. The length and width of each peripheral sub-groove can be the same or different. Each of the peripheral sub-grooves extends to both sides with the spiral line S' (S") as the center to accommodate the linear lamp.

[0060] In some embodiments, the inner surface of each of the outer sub-grooves may have different curvatures to provide different reflection angles. Thus, based on the shape of the lamp arrangement, the curvature of the inner surface of the outer sub-groove corresponding to each linear lamp 23 may be adjusted to provide different illumination angles for each linear lamp 23.

[0061] In some embodiments, the reflective plate 21 is made of a reflective material such as aluminum or steel. The inner surfaces of the peripheral sub-grooves and the central groove 24 may also be coated with a coating that enhances reflectivity, such as a gold coating. The peripheral sub-grooves and the central groove 24 may have a reflectivity greater than 90%, optionally greater than about 98%.

[0062] Due to the need for temperature measurement and correction, the reflector also includes: a central temperature measurement zone 26, and the diameter range of the central temperature measurement zone 26 is 10-80 mm. The first thermometer 18 is arranged above the central zone 26, and the measurement light path of the first thermometer 18 passes through the central temperature measurement zone 26 to measure the temperature at the center of the wafer. The central heating lamp 22 has a first distance d1 from the central temperature measurement zone 26, and the first distance d1 can range from 5 to 40 mm. The linear lamp 23 arranged at the starting point of the spiral line S (S', S") has a second distance d2 from the central temperature measurement zone 26, and the second distance d2 is greater than the first distance d1. It should be noted that the starting point of the spiral line refers to the end point of the spiral line close to the central area C.

[0063] Please refer to the structure of each linear lamp 23 Figure 7The linear lamp 23 includes a lamp housing 44, which is made of a transparent material such as quartz. A filament 41 is arranged in the housing 44. The linear lamp includes a horizontally extending tubular lamp tube 47, which is arranged in the groove 43 as a linear extension part. Two terminals 46 of the linear lamp 23 are arranged on the outside of the reflector 42. The two ends of the filament 41 are respectively connected to the two terminals 46, and are connected to an external power source through the two terminals 46. The terminal 46 is usually a cold end of a linear lamp 23. By arranging the tubular lamp tube 47 in the groove 43 and arranging the two terminals 46 on the outside of the reflector 42, local cold spots in the linear lamp during the heating process are avoided, the heating uniformity is improved, and the power line is prevented from overheating, thereby improving the service life. In some embodiments, in order to prevent the filament 41 from deforming in the lamp housing 44 and affecting the heating effect, a plurality of supporting structures (not shown in the figure) can also be arranged in the lamp housing 44. In addition, the wiring terminal 46 is fixed by a fixing plate 45 disposed outside the reflecting plate 42 , and mounting through holes for mounting the linear lamp are respectively disposed on the reflecting plate 42 and the fixing plate 45 .

[0064] The semiconductor processing device also includes a controller, which is connected to the first temperature measuring instrument 18, the second temperature measuring instrument 19, multiple other temperature measuring instruments, and multiple external power sources for controlling the heating power of the linear lamp 23 and the central heating lamp 22.

[0065] The controller independently controls the heating power of each linear lamp 23 and the central heating lamp 22 based on the temperatures measured by the first thermometer 18, the second thermometer 19, and multiple other thermometers on multiple areas of the wafer, so as to adjust the temperature of multiple areas on the wafer, or adjust the temperature of areas on the wafer where local cold areas or hot areas appear.

[0066] The controller also stores a first temperature difference threshold. The controller obtains the measurement values ​​of the first thermometer 18 and the second thermometer 19, obtains a first difference between the two, and compares the first difference with the first temperature difference threshold to determine whether the measurement result of the first thermometer 18 is reliable.

[0067] In some embodiments, the lamp assembly as described above can be disposed above the upper chamber cover 11, and in some other embodiments, the lamp assembly as described above can also be disposed below the lower chamber cover 16. Of course, due to the different locations and measurement optical paths of the first thermometer 18 and the second thermometer 19, and the different structures of the process area A and the purification area B, when the lamp assembly is used as the lower heating assembly, the arrangement of the linear lamp and the central heating lamp, as well as the arrangement of the reflector grooves need to avoid the area that affects the measurement optical path and the airflow distribution.

[0068] Although the content of the utility model has been described in detail through the above preferred embodiments, it should be appreciated that the above description should not be considered as a limitation of the utility model. After reading the above content, various modifications and substitutions of the utility model will be obvious to those skilled in the art. Therefore, the protection scope of the utility model should be limited by the attached claims.

Claims

1. A lamp assembly for a semiconductor processing device, the lamp assembly being used to heat a rotating wafer, characterized in that: The lamp assembly comprises: A reflective plate, the reflective plate comprising a central area, a plurality of linear lamps arranged around the central area and along the circumference of the reflective plate, each of the linear lamps having a first end and a second end, the second end of a preceding linear lamp arranged close to the central area being adjacent to the first end of a succeeding linear lamp, and at least a plurality of adjacent linear lamps forming partially staggered circular projection areas on the surface of a rotating wafer.

2. The lamp assembly for semiconductor processing equipment according to claim 1, wherein: The central area is provided with a central temperature measuring area for measuring temperature.

3. The lamp assembly for semiconductor processing equipment according to claim 2, wherein: A central heating lamp is disposed in the central area, and the central heating lamp has a first distance from the central temperature measuring area.

4. The lamp assembly for semiconductor processing equipment according to claim 3, wherein: The reflective plate is provided with a groove, and the linear lamp and the central heating lamp are arranged in the groove.

5. The lamp assembly for semiconductor processing equipment according to claim 4, wherein: The central heating lamp is a linear lamp.

6. The lamp assembly for semiconductor processing equipment according to claim 4, wherein: The groove includes a central groove and a peripheral groove, wherein the central groove is used to accommodate the central heating lamp, and the peripheral groove is used to accommodate a plurality of the linear lamps.

7. The lamp assembly for semiconductor processing equipment according to claim 6, wherein: The peripheral groove is a continuous shape.

8. The lamp assembly for semiconductor processing equipment according to claim 4, wherein: The groove includes a central groove and a peripheral groove, the peripheral groove includes a plurality of peripheral sub-grooves, and each of the peripheral sub-grooves is used to accommodate one or more linear lamps.

9. The lamp assembly for semiconductor processing equipment according to claim 6, wherein: Each of the linear lamps is arranged in a spiral line along the reflective plate.

10. The lamp assembly for semiconductor processing equipment according to claim 9, wherein: The center position of each linear lamp is arranged in a spiral line along the reflective plate.

11. The lamp assembly for semiconductor processing equipment according to claim 9 or 10, characterized in that: The peripheral groove forms a spiral region, and the linear lamp is arranged in the spiral region.

12. The lamp assembly for semiconductor processing equipment according to claim 9 or 10, characterized in that: The linear lamp disposed at the starting point of the spiral line has a second distance from the central temperature measurement area, and the second distance is greater than the first distance.

13. The lamp assembly for semiconductor processing equipment according to claim 12, wherein: The diameter of the central temperature measuring area ranges from 10 to 80 mm.

14. A reflector for a semiconductor processing device lamp assembly, characterized in that: The reflective plate includes a central area, a groove is arranged around the central area, and the groove forms a spiral area for accommodating multiple linear lights. The reflective plate is also provided with mounting through holes for mounting the multiple linear lights, and the outer side of the reflective plate is also provided with a fixing plate for fixing the multiple linear lights.

15. A semiconductor processing device comprising the lamp assembly according to any one of claims 1 to 13, characterized in that: The semiconductor processing device further comprises: A reaction chamber is arranged below the reflective plate and the linear lamp, the reaction chamber is made of a transparent material, a base is arranged in the reaction chamber, the base rotates under the drive of a pivot connected to the base, the lamp assembly heats the wafer placed on the base through the reaction chamber, and at least a plurality of adjacent linear lamps form partially staggered circular projection areas on the surface of the rotating wafer.

16. The semiconductor processing apparatus according to claim 15, wherein: The semiconductor processing device further includes a first thermometer disposed in a central temperature measurement area of ​​the reflective plate, wherein the first thermometer is used to measure the temperature at the center of the wafer.

17. The semiconductor processing apparatus according to claim 16, wherein: The semiconductor processing device further includes a second thermometer disposed on the back side of the susceptor, and the second thermometer is used to measure the temperature at the center of the back side of the susceptor.

18. The semiconductor processing apparatus according to claim 17, wherein: The second thermometer is also used to calibrate the first thermometer.

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