Gas transmission device and process chamber of semiconductor process equipment

By designing a gas transmission device including an intake main pipe, a first intake branch pipe, an intake nozzle and a flow ratio control element, the problem of intake in the edge area caused by asymmetry in the chamber structure is solved, and the uniformity of wafer etching rate and product yield are improved.

CN222619678UActive Publication Date: 2025-03-14BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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Patent Information

Application Number
CN202420167427.X
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-01-23
Publication Date
2025-03-14
Estimated Expiration
2034-01-23

AI Technical Summary

Technical Problem

Due to the asymmetry of the chamber structure, the air intake in the edge area is uneven, which affects the uniformity of the wafer edge etching rate and thus affects the product yield.

Method used

An air transport device is designed, including an intake main pipe, a plurality of first intake branches, a plurality of intake nozzles and a first flow proportional control element, and controls the intake amount of the first intake branches through the first flow proportional control element, and uniformly injects gas into the edge area of ​​the process chamber through the plurality of intake nozzles.

Benefits of technology

It realizes uniform distribution and adjustment of airflow, improves wafer uniformity, improves product yield, and meets process requirements under different working conditions.

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Abstract

The utility model discloses a gas transmission device and a process chamber of semiconductor process equipment, and relates to the field of semiconductors. A gas conveying device is applied to a process chamber of semiconductor process equipment and comprises a gas inlet header pipe, a plurality of first gas inlet branch pipes, a plurality of gas inlet nozzles and a first flow proportion control element. The air inlet header pipe is connected with the air inlet end of the first flow proportion control element, the multiple first air inlet branch pipes are connected with the air outlet end of the first flow proportion control element, and the first flow proportion control element is used for controlling the air inlet amount of each first air inlet branch pipe; the multiple air inlet nozzles are used for being arranged in the edge area of an inner cavity of the process cavity and connected with the multiple first air inlet branch pipes in a one-to-one correspondence mode. The process chamber of the semiconductor process equipment comprises the gas transmission device. The method at least can solve the problem that the uniformity of the etching rate of the wafer edge is affected by non-uniform air intake of the edge area.
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Description

Technical Field

[0001] The present application belongs to the field of semiconductor technology, and specifically relates to a gas delivery device and a process chamber of semiconductor process equipment. Background Art

[0002] Etching process equipment is widely used in the manufacturing process of integrated circuits. Commonly used etching process equipment includes capacitively coupled plasma (ccp) and inductively coupled plasma (icp). They mainly use radio frequency power to dissociate the reaction gas input into the reaction device into plasma, and use the plasma to perform plasma etching on the substrate placed inside. The reaction gas is an important parameter in the etching process, and the device for delivering the reaction gas is an important component of the etching process equipment.

[0003] The gas delivery device is generally composed of a gas box, a final valve, a gas line, a gas nozzle, a gas injector, a uniform flow chamber, and an adjustment bracket (GDP). As the etching process precision requirements become higher and higher, the location of the process gas delivery to the chamber has developed from the initial single-channel to dual-channel (center gas intake and edge gas intake) and triple-channel (center gas intake, middle gas intake and edge gas intake). By adjusting the intake volume of the center gas intake, middle gas intake and edge gas intake, the etching precision and uniformity of the wafer can be improved, providing hardware support for process debugging.

[0004] However, due to the asymmetry of the chamber structure itself, the air intake in each edge area will be uneven, which will affect the uniformity of the wafer edge etching rate and ultimately affect the product yield. Utility Model Content

[0005] The purpose of the embodiments of the present application is to provide a gas delivery device and a process chamber of a semiconductor process equipment, which can at least solve the problem that uneven air intake in the edge area affects the uniformity of the wafer edge etching rate.

[0006] In order to solve the above technical problems, this application is implemented as follows:

[0007] The embodiment of the present application provides a gas delivery device, which is applied to a process chamber of a semiconductor process equipment, and the gas delivery device includes: an air intake main pipe, a plurality of first air intake branches, a plurality of air intake nozzles and a first flow rate ratio control element;

[0008] The intake manifold is connected to the intake end of the first flow rate proportional control element, and the plurality of first intake branches are respectively connected to the outlet ends of the first flow rate proportional control element, and the first flow rate proportional control element is used to control the intake volume of each of the plurality of first intake branches;

[0009] The plurality of air inlet nozzles are respectively used to be arranged at the edge area of ​​the inner cavity of the process chamber, and are respectively connected to the plurality of the first air inlet branch pipes in a one-to-one correspondence.

[0010] The embodiment of the present application also provides a process chamber of a semiconductor process equipment, the process chamber comprising: a cavity and the above-mentioned gas delivery device;

[0011] The gas delivery device is disposed in the cavity and delivers process gas into the cavity at least through a plurality of gas inlet nozzles.

[0012] In the embodiment of the present application, the air intake volume of each of the multiple first air intake branches can be controlled by the first flow ratio control element, so that the airflow can be evenly distributed to each first air intake branch, and sprayed evenly into the inner cavity of the process chamber through multiple air intake nozzles, thereby achieving the purpose of improving the uniformity of the wafer and increasing the product yield; and, the gas flow of each first air intake branch can also be regulated by the first flow ratio control element to meet the process requirements under a variety of different working conditions. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 is a cross-sectional schematic diagram of a process chamber in the related art;

[0014] Figure 2 It is a cross-sectional schematic diagram of a gas transmission device in the related art;

[0015] Figure 3 It is a partial cross-sectional schematic diagram of a gas transmission device in the related art;

[0016] Figure 4 A cross-sectional schematic diagram of a gas delivery device disclosed in an embodiment of the present application;

[0017] Figure 5 It is a partial cross-sectional schematic diagram of the blocking member disclosed in the embodiment of the present application in an open position;

[0018] Figure 6 It is a partial cross-sectional schematic diagram of the blocking member disclosed in the embodiment of the present application in a closed position.

[0019] Description of reference numerals:

[0020] 10- Gas transmission device;

[0021] 110-intake manifold;

[0022] 121 - first air intake branch pipe; 122 - second air intake branch pipe; 123 - third air intake branch pipe; 124 - fourth air intake branch pipe;

[0023] 130-air inlet nozzle; A-large end; B-small end; C-second step surface; 131-air delivery cavity; 132-second air inlet hole; 133-air delivery channel;

[0024] 141 - a first flow rate proportional control element; 142 - a second flow rate proportional control element;

[0025] 150-fixing assembly; 151-fixing member; 1511-installation cavity; 15111-first cavity unit; 15112-second cavity unit; 15113-first step surface; 15114-opening; 1512-first air inlet; 152-closing member;

[0026] 161 - first sealing member; 162 - second sealing member; 163 - third sealing member;

[0027] 170 - blocking member; 171 - first blocking surface; 172 - second blocking surface;

[0028] 180-Drive mechanism. DETAILED DESCRIPTION

[0029] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0030] The terms "first", "second", etc. in the specification and claims of the present application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable under appropriate circumstances, so that the embodiments of the present application can be implemented in an order other than those illustrated or described here, and the objects distinguished by "first", "second", etc. are generally of one type, and the number of objects is not limited. For example, the first object can be one or more. In addition, "and / or" in the specification and claims represents at least one of the connected objects, and the character " / " generally indicates that the objects associated with each other are in an "or" relationship.

[0031] The embodiments of the present application are described in detail below through specific embodiments and their application scenarios in conjunction with the accompanying drawings.

[0032] Figure 1It is a process chamber in the related art, which can intake air from the edge area, the middle area and the center area, so as to provide more uniform gas for the process.

[0033] Figure 2 It is a cross-sectional schematic diagram of a gas delivery device in the related art. It can be seen from the figure that eight nozzles are evenly distributed in the edge area, and gas is sprayed to the edge area of ​​the process chamber through the eight nozzles to ensure the uniformity of the gas in the edge area.

[0034] Figure 3 It is a partial cross-sectional schematic diagram of a gas delivery device in the related art, in which one end of the nozzle is passed through the channel of the adjustment bracket from the inside, and the end of the nozzle is clamped in the groove of the adjustment bracket to achieve fixed installation of the nozzle.

[0035] However, the gas delivery device in the related technology cannot adjust the gas flow of each nozzle, and thus cannot adjust the etching rate in a certain area around the edge area, resulting in insufficient selectivity of the hardware for process debugging, affecting the debugging of the etching equipment for high-level processes.

[0036] In addition, particles are easily accumulated at the installation position of the nozzle and the adjustment bracket, causing particle pollution and affecting product quality; and, during the process, the gas inside the process chamber is easy to flow back through the nozzle, causing particle accumulation or leakage.

[0037] Based on the above situation, the embodiment of the present application discloses a gas delivery device 10, which is applied to a process chamber of a semiconductor process equipment. Figures 4 to 6 The disclosed gas delivery device 10 includes an intake manifold 110, a plurality of first intake branches 121, a plurality of intake nozzles 130 and a first flow ratio control element 141, ie, a flow ratio controller (Flow Ratio Controller, FRC).

[0038] The gas intake manifold 110 can transmit a relatively large flow of gas, and the plurality of first gas intake branches 121 can respectively receive the gas transmitted in the gas intake manifold 110, and the gas intake nozzle 130 is used to spray the gas into the inner cavity of the process chamber; and the first flow ratio control element 141 is used to distribute and adjust the flow of gas, and adjust the etching rate of different areas around the edge of the wafer by accurately controlling the gas flow in the edge area, so as to achieve the purpose of improving the uniformity of the wafer and meet the needs of high-end processes. Exemplarily, the first flow ratio control element 141 can be a flow ratio control valve, and of course, it can also be other components, which are not specifically limited here.

[0039] The intake manifold 110 is connected to the intake end of the first flow ratio control element 141, and a relatively large flow of gas can be transmitted to the first flow ratio control element 141 for flow distribution through the intake manifold 110. The plurality of first intake branches 121 are respectively connected to the outlet ends of the first flow ratio control element 141, and the intake volume of each of the plurality of first intake branches 121 can be controlled through the first flow ratio control element 141, so that the plurality of gases distributed through the first flow ratio control element 141 can respectively enter the plurality of first intake branches 121 and be transmitted through the plurality of first intake branches 121.

[0040] The multiple air inlet nozzles 130 are respectively used to be set in the edge area of ​​the inner cavity of the process chamber, and are respectively connected to the multiple first air inlet branches 121 in a one-to-one correspondence. For example, the multiple air inlet nozzles 130 can be arranged along the circumference of the inner cavity of the process chamber, and can be arranged evenly or unevenly. When the multiple air inlet nozzles 130 are arranged evenly, the gas flow in each first air inlet branch 121 is controlled by the first flow ratio control element 141, so that the gas flow in each first air inlet branch 121 is uniform, so as to ensure the uniformity of each air inlet nozzle 130 spraying gas to the edge area of ​​the inner cavity of the process chamber, which can be beneficial to improve the process uniformity; when the multiple air inlet nozzles 130 are arranged unevenly, the gas flow in each first air inlet branch 121 is controlled by the first flow ratio control element 141, so that the gas flow in at least part of the first air inlet branch 121 is uneven, so as to adapt to the uneven distribution of the multiple air inlet nozzles 130.

[0041] For example, the first air inlet branch pipe 121 and the air inlet nozzle 130 can be provided with eight, respectively. In this case, eight-zone air inlet can be formed at the edge, and the gas inlet volume of the eight zones can be precisely controlled, so as to provide hardware selection for high-end support debugging and improve the etching uniformity of the outer ring of the wafer. Of course, it is not limited to the eight-zone air inlet at the edge, and can also be other numbers of air inlet areas, which are not specifically limited here.

[0042] For example, eight areas can be evenly inletted, and at this time, the flow rate percentage of each path is set to 12.5% ​​through the first flow rate ratio control element 141. Of course, if a single path needs to increase the flow rate, the percentage of the path can be increased, and the percentages of other paths can be reduced.

[0043] For ease of adjustment, settings for each gas flow rate may be added to the process menu of the semiconductor process equipment. When the process chamber executes the process menu, the software controls the size of each flow rate output by the first flow ratio control element 141 based on the settings for each flow rate in the process menu.

[0044] In addition, when considering that the product parameters (i.e., inline) are partially inconsistent in the outer circle during process debugging, the edge air intake partition control function can be used to compensate. This function can not only compensate for the inline unevenness caused by other hardware or design of the process chamber, but also compensate for the inline unevenness of the front layer of the wafer itself, providing more hardware options for process debugging. Among them, product parameters can include product bandwidth, uniformity, etc.

[0045] Based on the above settings, the embodiment of the present application can control the intake volume of each of the multiple first air inlet branch pipes 121 through the first flow ratio control element 141, so that the airflow can be evenly distributed to each first air inlet branch pipe 121, and sprayed evenly into the inner cavity of the process chamber through multiple air inlet nozzles 130, thereby achieving the purpose of improving the uniformity of the wafer and increasing the product yield; and, the gas flow of each first air inlet branch pipe 121 can also be regulated by the first flow ratio control element 141 to meet the process requirements under a variety of different working conditions.

[0046] refer to Figure 4 In some embodiments, the gas delivery device 10 may further include a fixing assembly 150, which is used to be disposed in the process chamber, and the fixing assembly 150 may be used to install the gas inlet nozzle 130. Exemplarily, the fixing assembly 150 may be an annular structure, such as a circular ring, a polygonal ring, an elliptical ring, etc. Of course, it may also be other shapes, which are not specifically limited here.

[0047] refer to Figure 5 As in Figure 6, the fixing assembly 150 may be provided with a plurality of mounting cavities 1511, each mounting cavity 1511 being used to communicate with the inner cavity of the process chamber, and a plurality of air inlet nozzles 130 are provided in a one-to-one correspondence in the plurality of mounting cavities 1511. The mounting cavity 1511 can be used to fix and install the air inlet nozzle 130, and ensure that the air inlet nozzle 130 can be connected with the process chamber. In addition, the plurality of mounting cavities 1511 may be arranged at intervals around the circumference of the process chamber, and may be arranged uniformly or non-uniformly. Exemplarily, the fixing assembly 150 may include a fixing member 151, which is used to fix and install the air inlet nozzle 130, and accordingly, the fixing member 151 is provided with a plurality of mounting cavities 1511.

[0048] In order to pass the gas into the gas inlet nozzle 130, the side wall of each installation cavity 1511 can be provided with a first gas inlet hole 1512, and each first gas inlet branch pipe 121 is connected with the corresponding gas inlet nozzle 130 through the first gas inlet hole 1512. In this way, the gas in the first gas inlet branch pipe 121 can enter the gas inlet nozzle 130 through the first gas inlet hole 1512, and finally be sprayed toward the edge area of ​​the inner cavity of the process chamber through the gas inlet nozzle 130.

[0049] Continue to refer Figure 5 and Figure 6 In some embodiments, the installation cavity 1511 may include a first cavity unit 15111 and a second cavity unit 15112 which are connected to each other, wherein the first cavity unit 15111 is used to communicate with the inner cavity of the process chamber, and the cross-sectional area of ​​the first cavity unit 15111 is smaller than the cross-sectional area of ​​the second cavity unit 15112, so that the area between the two forms a first step surface 15113.

[0050] Correspondingly, the air inlet nozzle 130 can have a large end A and a small end B, wherein the small end B is inserted into the first cavity unit 15111, the large end A is inserted into the second cavity unit 15112, and the area between the large end A and the small end B forms a second step surface C, which abuts against the first step surface 15113.

[0051] Based on the above arrangement, the first cavity unit 15111 can accommodate, limit and fix the small end B, and the second cavity unit 15112 can accommodate, limit and fix the large end A, so that the entire air inlet nozzle 130 can be fixedly installed and the stability of the installation can be ensured. In addition, considering that the first cavity unit 15111 is connected to the inner cavity of the process chamber, that is, the first cavity unit 15111 is closer to the inner cavity of the process chamber, and the second cavity unit 15112 is relatively far away from the inner cavity of the process chamber, at the same time, the cross-sectional area of ​​the first cavity unit 15111 is smaller than the cross-sectional area of ​​the second cavity unit 15112, so that when installing the air inlet nozzle 130, the air inlet nozzle 130 can be installed from the outside to the inside of the process chamber, and when the first step surface 15113 abuts against the second step surface C, it indicates that the air inlet nozzle 130 is installed in place.

[0052] Compared with the nozzle installed from the inside of the process chamber, the installation method of the air inlet nozzle 130 in the embodiment of the present application has obvious technical advantages. First, the area where the air inlet nozzle 130 is installed in the process chamber no longer needs to start with a groove structure, so it is not easy to accumulate particles; second, disassembly and assembly are more convenient.

[0053] In order to prevent the gas in the inner cavity of the process chamber from flowing back due to a gap between the inner wall of the first cavity unit 15111 and the outer wall of the small end B, an interference fit assembly method can be adopted between the first cavity unit 15111 and the small end B to improve the sealing between the first cavity unit 15111 and the small end B, thereby effectively preventing the gas in the inner cavity of the process chamber from flowing back and causing particle accumulation or gas leakage.

[0054] Of course, a sealing ring can also be provided between the first cavity unit 15111 and the small end B, and the sealing ring can seal the gap between the two to prevent gas leakage.

[0055] To facilitate assembly and disassembly of the gas inlet nozzle 130 , an end of the installation cavity 1511 away from the inner cavity of the process chamber may be provided with an opening 15114 , and the opening 15114 is used for inserting or removing the gas inlet nozzle 130 .

[0056] Of course, to ensure air tightness, the fixing assembly 150 may further include a sealing member 152, which may be opened or closed and disposed at the opening 15114. Thus, when the air inlet nozzle 130 needs to be disassembled, the sealing member 152 is opened to expose the opening 15114, so as to facilitate the insertion or removal of the air inlet nozzle 130; after the disassembly is completed, the sealing member 152 is closed to block the opening 15114, thereby ensuring the sealing of the installation cavity 1511 and preventing gas leakage.

[0057] To further improve the sealing performance, a second sealing member 162 may be provided between one end of the installation cavity 1511 that is away from the inner cavity of the process chamber and the closure member 152. Thus, when the closure member 152 is closed, the second sealing member 162 may be located between the closure member 152 and one end of the installation cavity 1511 to perform a sealing function, thereby effectively preventing gas leakage and further improving the sealing performance of the equipment.

[0058] Exemplarily, the second sealing member 162 may be a sealing ring, a sealing gasket or other components. Of course, it may also be other components, which are not specifically limited here.

[0059] In some embodiments, the gas delivery device 10 may further include a blocking member 170, which is movable relative to the gas inlet nozzle 130 to connect or disconnect the gas inlet nozzle 130 from the corresponding first gas inlet branch pipe 121. Based on this, the gas inlet process can be controlled or stopped by moving the blocking member 170.

[0060] Continue to refer Figure 5 and Figure 6 In some embodiments, the gas inlet nozzle 130 may be provided with a gas delivery cavity 131, a second gas inlet hole 132 and a gas delivery channel 133, wherein the second gas inlet hole 132 is connected to the first gas inlet hole 1512 and the gas delivery cavity 131, and the gas delivery channel 133 is used to connect the gas delivery cavity 131 and the inner cavity of the process chamber, so that the gas can pass through the first gas inlet hole 1512, the second gas inlet hole 132, the gas delivery cavity 131 and the gas delivery channel 133 in sequence, and finally be sprayed into the inner cavity of the process chamber.

[0061] Considering that in some cases, the gas in the inner cavity of the process chamber is prone to reverse flow through the gas delivery channel 133, which is prone to cause particle accumulation or gas leakage, etc. Based on this, in the embodiment of the present application, the blocking member 170 is movably arranged in the gas delivery cavity 131, and at least partially extends out of the gas delivery cavity 131. By moving the blocking member 170, its position in the gas delivery cavity 131 can be changed, so that it has an open position and a closed position; and at least part of the blocking member 170 extends out of the gas delivery cavity 131 in order to input power to the blocking member 170 so that the blocking member 170 can move in the gas delivery cavity 131. Exemplarily, the blocking member 170 can be driven manually or automatically. Exemplarily, the blocking member 170 can be made of ceramic material, of course, it can also be made of other materials, which are not specifically limited here.

[0062] When the blocking piece 170 is in the open position, the second air inlet hole 132, the gas delivery cavity 131 and the gas delivery channel 133 are connected in sequence, so that the gas can flow smoothly and finally flow into the inner cavity of the process chamber; when the blocking piece 170 is in the closed position, the second air inlet hole 132 and the gas delivery channel 133 are separated by the blocking piece 170, so that the gas cannot flow into the gas delivery channel 133, and gas cannot be delivered to the inner cavity of the process chamber.

[0063] Based on the above arrangement, when it is necessary to continuously input gas into the edge area of ​​the inner cavity of the process chamber, the blocking member 170 moves to the open position to connect the second gas inlet hole 132 with the gas delivery channel 133, thereby ensuring the normal progress of the process.

[0064] When there is no need to supply gas to the process chamber, the blocking member 170 moves to the closed position to isolate the second gas inlet hole 132 from the gas supply channel 133 , thereby effectively preventing the gas in the inner cavity of the process chamber from flowing in the opposite direction.

[0065] In some embodiments, the axis of the second air inlet 132 may be perpendicular to the axis of the gas delivery channel 133, and accordingly, the blocking member 170 may have a first blocking surface 171, which is arranged opposite to the gas delivery channel 133. When the blocking member 170 is in the open position, the first blocking surface 171 is separated from the gas delivery channel 133, so that the second air inlet 132 and the gas delivery channel 133 are respectively in the open state, and can be connected to the gas delivery cavity 131 respectively, so as to facilitate gas transmission.

[0066] When the blocking member 170 is in the closed position, the first blocking surface 171 blocks the gas delivery channel 133. Based on this, the blocking member 170 can block the path of gas flow, thereby ensuring that the gas does not flow back, effectively alleviating the gas leakage problem.

[0067] Of course, the blocking member 170 may also have a second blocking surface 172, which is perpendicular to the first blocking surface 171, and the second blocking surface 172 may be arranged opposite to or offset from the second air inlet 132. When the blocking member 170 is in the open position, the second blocking surface 172 is separated from the second air inlet 132, and the first blocking surface 171 is separated from the gas delivery channel 133, so that the second air inlet 132 and the gas delivery channel 133 are respectively in the open state, and can be respectively connected to the gas delivery cavity 131, so as to facilitate gas transmission.

[0068] When the blocking member 170 is in the closed position, the second blocking surface 172 blocks the second air inlet 132, and the first blocking surface 171 blocks the gas delivery channel 133, so that the blocking member 170 can block the gas flow path, thereby ensuring that the gas does not flow back and effectively alleviating the gas leakage problem.

[0069] In order to further improve the sealing performance, the first sealing surface 171 can be provided with a first sealing member 161. In this way, when the sealing member 170 moves to the closed position, the first sealing member 161 can seal the first sealing surface 171 and the end face of the gas transmission channel 133 to prevent gas reverse flow and leakage. At the same time, it can also play a buffering role, thereby preventing parts from being damaged due to direct collision.

[0070] Of course, a first sealing member 161 may also be provided on the end surface of the gas delivery channel 133 facing the blocking member 170. Thus, when the blocking member 170 moves to the closed position, the first sealing member 161 may seal the first blocking surface 171 and the end surface of the gas delivery channel 133 to prevent gas from flowing back and causing leakage.

[0071] In addition, the first sealing member 161 can be respectively provided on the first sealing surface 171 and the end surface of the gas supply channel 133 facing the sealing member 170. Thus, when the sealing member 170 moves to the closed position, the first sealing member 161 can play a multi-layer sealing role between the first sealing surface 171 and the end surface of the gas supply channel 133 to prevent gas reverse flow and leakage.

[0072] In order to realize the driving of the blocking member 170, the gas delivery device 10 in the embodiment of the present application may further include a driving mechanism 180, which is arranged on the fixing assembly 150, and the driving end of the driving mechanism 180 is connected to the blocking member 170 to drive the blocking member 170 to move between the open position and the closed position. Based on this arrangement, under the driving action of the driving mechanism 180, the blocking member 170 can reciprocate between the open position and the closed position, so as to realize the connection or cutoff of the gas delivery path, so as to ensure that the gas will not flow back and leak.

[0073] Exemplarily, the driving mechanism 180 may be a cylinder, a hydraulic cylinder, an electric cylinder or other components. Of course, it may also be in other forms, which are not specifically limited here.

[0074] It should be noted that the drive mechanism 180 can be controlled by software. When it is detected that air intake is required in the edge area, the drive mechanism 180 is controlled to drive the blocking member 170 to open so that gas can flow in. When air intake is not required in the edge area, the drive mechanism 180 is controlled to drive the blocking member 170 to close to prevent gas backflow and cause particle accumulation or gas leakage. When the drive mechanism 180 is a cylinder, a position sensor can be used to feedback the movement of oil stains in the cylinder to the corresponding position. If the position does not correspond, the control triggers an alarm.

[0075] In the embodiment of the present application, the driving mechanism 180 is disposed on the fixing assembly 150, for example, by fastening, clamping, plugging, etc. with fasteners to ensure the stability of the driving mechanism 180. Considering that the output end of the driving mechanism 180 is connected to the blocking member 170, and the end of the blocking member 170 passes through the opening 15114 of the closure member 152, it is easy to form a gap between the blocking member 170 and the opening 15114, resulting in gas leakage.

[0076] Based on the above situation, in the embodiment of the present application, a third seal 163 is provided between the driving mechanism 180 and the fixed assembly 150, and the driving mechanism 180 and the fixed assembly 150 are sealed and connected through the third seal 163. In this way, even if there is a gap between the sealing member 170 and the opening 15114, the gas leaking through the gap will be blocked by the third seal 163, thereby further playing a role in preventing gas leakage.

[0077] Exemplarily, the third sealing member 163 may be a sealing ring, a sealing gasket or other components. Of course, it may also be other components, which are not specifically limited here.

[0078] Considering that the inner cavity of the process chamber not only inputs gas in the edge area during the process, but also inputs gas in the central area and the middle area respectively, based on this, the gas delivery device 10 in the embodiment of the present application may also include a second air intake branch pipe 122, a third air intake branch pipe 123, a fourth air intake branch pipe 124 and a second flow rate ratio control element 142, wherein the air intake manifold 110 is connected to the air intake end of the second flow rate ratio control element 142, and the second air intake branch pipe 122, the third air intake branch pipe 123 and the fourth air intake branch pipe 124 are connected to the air intake end of the second flow rate ratio control element 142. The third air inlet branch 123 is connected to the inner cavity of the process chamber at one end away from the second flow ratio control element 142, and is used to supply air to the middle area of ​​the inner cavity. The fourth air inlet branch 124 is connected to the air inlet end of the first flow ratio control element 141 at one end away from the second flow ratio control element 142. The middle area mentioned above is located between the central area and the edge area.

[0079] Based on the above settings, the gas is transmitted to the second flow ratio control element 142 via the intake manifold 110, and the gas flow rate requirements of the edge area, the central area and the middle area in the inner cavity of the process chamber are adaptively adjusted by the second flow ratio control element 142, so that the gas input from the intake manifold 110 can be distributed into three streams of gas according to the first preset ratio, which are used to transport to the edge area, the central area and the middle area respectively; one of the streams is directly transported to the central area through the second intake branch pipe 122 to realize gas delivery to the central area; the second stream is directly transported to the middle area through the third intake branch pipe 123 to realize gas delivery to the middle area; the third stream is transported to the first flow ratio control element 141 through the fourth intake branch pipe 124, and then a secondary distribution is performed to divide the third stream of gas into multiple branches again according to the second preset ratio, and finally transmitted to the edge area by the corresponding first intake branch pipe 121 and the intake nozzle 130 to realize gas delivery to the edge area. Therefore, the gas delivery device 10 in the embodiment of the present application can distribute the gas according to the actual process requirements to meet the process requirements under actual working conditions.

[0080] Based on the above-mentioned gas delivery device 10, an embodiment of the present application also discloses a process chamber of a semiconductor process equipment, wherein the disclosed process chamber includes a cavity and the above-mentioned gas delivery device 10, wherein the gas delivery device 10 is arranged in the cavity and delivers process gas into the cavity through at least multiple gas inlet nozzles 130.

[0081] It should be noted here that, in addition to supplying gas through multiple gas inlet nozzles 130, gas can also be supplied through components such as the second gas inlet branch pipe 122 and the third gas inlet branch pipe 123 to improve the uniformity of gas distribution in the cavity.

[0082] In addition, the inner cavity of the above-mentioned process chamber is the space surrounded by the cavity, so as to provide the required process environment for the process.

[0083] The embodiments of the present application are described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of the present application, ordinary technicians in this field can also make many forms without departing from the purpose of the present application and the scope of protection of the claims, all of which are within the protection of the present application.

Claims

1. A gas delivery device, applied to a process chamber of a semiconductor process equipment, characterized in that: The gas delivery device (10) comprises: an intake manifold (110), a plurality of first intake branch pipes (121), a plurality of intake nozzles (130) and a first flow rate ratio control element (141); The intake manifold (110) is connected to an intake end of the first flow rate proportional control element (141), and the plurality of first intake branch pipes (121) are respectively connected to an outlet end of the first flow rate proportional control element (141), and the first flow rate proportional control element (141) is used to control the intake volume of each of the plurality of first intake branch pipes (121); The plurality of air inlet nozzles (130) are respectively arranged at the edge area of ​​the inner cavity of the process chamber, and are respectively connected to the plurality of first air inlet branch pipes (121) in a one-to-one correspondence.

2. The gas delivery device according to claim 1, characterized in that: The gas delivery device (10) further comprises a fixing component (150) for being arranged in the process chamber; The fixing assembly (150) is provided with a plurality of installation cavities (1511), each of the installation cavities (1511) is used to communicate with the inner cavity of the process chamber, and the plurality of air inlet nozzles (130) are arranged in the plurality of installation cavities (1511) in a one-to-one correspondence; A first air inlet hole (1512) is provided on the side wall of each installation cavity (1511), and each first air inlet branch pipe (121) is connected to the corresponding air inlet nozzle (130) through the first air inlet hole (1512).

3. The gas delivery device according to claim 2, characterized in that: The installation cavity (1511) comprises a first cavity unit (15111) and a second cavity unit (15112) which are connected to each other, wherein the first cavity unit (15111) is used to communicate with the inner cavity of the process chamber; The cross-sectional area of ​​the first cavity unit (15111) is smaller than the cross-sectional area of ​​the second cavity unit (15112), so that the area between the two forms a first step surface (15113); The air inlet nozzle (130) has a large end (A) and a small end (B), the small end (B) is inserted into the first cavity unit (15111), the large end (A) is inserted into the second cavity unit (15112), and the area between the large end (A) and the small end (B) forms a second step surface (C), and the second step surface (C) abuts against the first step surface (15113).

4. The gas delivery device according to claim 2 or 3, characterized in that: The gas delivery device (10) further comprises a blocking member (170), wherein the blocking member (170) is movable relative to the gas inlet nozzle (130) so as to connect or disconnect the gas inlet nozzle (130) from the corresponding first gas inlet branch pipe (121).

5. The gas delivery device according to claim 4, characterized in that: The gas inlet nozzle (130) is provided with a gas delivery cavity (131), a second gas inlet hole (132) and a gas delivery channel (133), wherein the second gas inlet hole (132) is connected to the first gas inlet hole (1512) and the gas delivery cavity (131), and the gas delivery channel (133) is used to connect the gas delivery cavity (131) and the process chamber; The blocking member (170) is movably disposed on the gas delivery cavity (131) and at least partially extends out of the gas delivery cavity (131); The blocking member (170) has an open position and a closed position. In the open position, the second air inlet hole (132), the air delivery cavity (131) and the air delivery channel (133) are connected in sequence. In the closed position, the second air inlet hole (132) and the air delivery channel (133) are separated by the blocking member (170).

6. The gas delivery device according to claim 5, characterized in that: The gas delivery device (10) further comprises a driving mechanism (180), wherein the driving mechanism (180) is arranged on the fixing assembly (150); The driving end of the driving mechanism (180) is connected to the blocking member (170) to drive the blocking member (170) to move between the open position and the closed position.

7. The gas delivery device according to claim 5, characterized in that: The axis of the second air inlet (132) is perpendicular to the axis of the air delivery channel (133); The blocking member (170) has a first blocking surface (171), and the first blocking surface (171) is arranged opposite to the gas delivery channel (133); In the open position, the first blocking surface (171) is separated from the gas delivery channel (133); In the closed position, the first blocking surface (171) blocks the gas delivery channel (133).

8. The gas delivery device according to claim 7, characterized in that: At least one of the first blocking surface (171) and the end surface of the gas delivery channel (133) facing the first blocking surface (171) is provided with a first sealing member (161).

9. The gas delivery device according to claim 1, characterized in that: The gas delivery device (10) further comprises a second air intake branch pipe (122), a third air intake branch pipe (123), a fourth air intake branch pipe (124) and a second flow ratio control element (142); The intake manifold (110) is connected to the intake end of the second flow rate proportional control element (142), and the second intake branch pipe (122), the third intake branch pipe (123) and the fourth intake branch pipe (124) are respectively connected to the outlet end of the second flow rate proportional control element (142); One end of the second air inlet branch pipe (122) away from the second flow rate proportional control element (142) is in communication with the inner cavity of the process chamber, and is used to supply air to the central area of ​​the inner cavity; One end of the third air inlet branch pipe (123) away from the second flow rate proportional control element (142) is in communication with the inner cavity of the process chamber, and is used to supply air to the middle area of ​​the inner cavity; One end of the fourth air intake branch pipe (124) that is away from the second flow rate proportional control element (142) is connected to the air intake end of the first flow rate proportional control element (141).

10. A process chamber of a semiconductor process equipment, characterized in that: The process chamber comprises: a chamber and a gas delivery device (10) according to any one of claims 1 to 9; The gas delivery device (10) is arranged in the cavity, and delivers process gas into the cavity through at least a plurality of gas inlet nozzles (130).