JR type ceramic electrostatic adsorption wafer carrying manipulator

Abstract

The utility model discloses a JR type ceramic electrostatic adsorption wafer carrying mechanical arm which comprises a ceramic base body, an electrode layer, a dielectric layer, a positive extraction electrode, a negative extraction electrode, a ceramic electrode cover plate and two electrode columns. The electrode layer is fixedly located on the left side of the top of the ceramic substrate, the dielectric layer is fixedly located on the top of the electrode layer, the positive extraction electrode and the negative extraction electrode are fixedly located on the right side of the top of the ceramic substrate and electrically connected with the electrode layer, and the two electrode columns are fixedly located on the right side of the top of the ceramic electrode cover plate respectively. The ceramic electrode cover plate is fixedly located on the right side of the top of the ceramic base body, the two electrode columns are electrically connected with the positive extraction electrode and the negative extraction electrode respectively, and the left side portion of the ceramic electrode cover plate abuts against the right side portion of the dielectric layer. The utility model has the advantages that the adsorption force is large in a vacuum state, the wafer is firmly fixed, the wafer carrying speed is improved, the wafer is adsorbed and released in an electric control manner, and the static electricity of the wafer is released.

Description

Technical Field

[0001] The utility model relates to the field of manipulators, in particular to a JR type ceramic electrostatic adsorption wafer transporting manipulator. Background Art

[0002] Wafer handling robots are used to transport wafers in semiconductor equipment. They are fixed at the end of the robot arm. Robots used in atmospheric environments generally use vacuum adsorption and Bernoulli principle adsorption.

[0003] When the robot is in a vacuum state, the above two types of robots cannot be used, so the robot arm is generally designed to be mechanically fixed or frictionally fixed. However, the wafer is fixed by gravity and friction, the wafer is easy to shake, and the robot's handling speed is limited, so an electrostatic adsorption robot is designed.

[0004] At present, the patent with announcement number "2020110296708" discloses a conveying robot, including: a substrate, a power supply and an electrostatic generating device, the substrate includes a supporting portion for supporting the wafer; the electrostatic generating device includes a positive charge terminal and an electronic terminal, the positive charge terminal and the electronic terminal are both arranged on the supporting portion, and the power supply is used to supply power to the positive charge terminal and the electronic terminal, so that the positive charge terminal generates positive charge and the electronic terminal generates electrons. The conveying robot proposed in the utility model uses Coulomb force to adsorb wafers, can realize the conveyance of wafers of various specifications, and can reduce production costs.

[0005] like Figure 1 This is the working principle diagram of Coulomb force adsorption. The characteristic of Coulomb force electrostatic adsorption is that the adsorption force is evenly distributed. It requires the substrate to have absolute insulation, and there are no freely movable electrons in it. It can only generate polarized charges, so that a standard electrostatic attraction is formed between the two electrodes. Because Coulomb force is the interaction between static charges, adsorption and desorption can be switched quickly. However, due to the small adsorption force, the electrodes require high voltage. Moreover, the substrate of the comparative document is a hollow chamber, and is provided with a first wire and a second wire. Therefore, the conveying robot needs to be assembled later, which increases the cost. Utility Model Content

[0006] The utility model aims to provide a JR type ceramic electrostatic adsorption wafer handling manipulator, which has the advantages of large adsorption force under vacuum state, firm wafer fixation, increased wafer handling speed, electrically controlled adsorption and release of wafers, and release of wafer static electricity.

[0007] The above technical objectives of the utility model are achieved through the following technical solutions:

[0008] A JR type ceramic electrostatic adsorption wafer handling robot comprises a ceramic substrate, an electrode layer, a dielectric layer, a positive lead-out electrode, a negative lead-out electrode, a ceramic electrode cover plate, and two electrode columns;

[0009] The electrode layer is fixed on the top left side of the ceramic substrate, the dielectric layer is fixed on the top of the electrode layer, the positive lead electrode and the negative lead electrode are fixed on the top right side of the ceramic substrate, the positive lead electrode and the negative lead electrode are electrically connected to the electrode layer, the two electrode columns are respectively fixed on the top right side of the ceramic electrode cover plate, the ceramic electrode cover plate is fixed on the top right side of the ceramic substrate, the two electrode columns are respectively electrically connected to the positive lead electrode and the negative lead electrode, and the left side of the ceramic electrode cover plate abuts against the right side of the dielectric layer;

[0010] A plurality of protrusions are provided on the top of the dielectric layer;

[0011] The dielectric layer is conductive ceramic.

[0012] The preferred solutions are as follows:

[0013] Preferably, the ceramic substrate is in the shape of a rectangular plate placed horizontally, and a rounded corner is provided on the left side of the ceramic substrate, and the diameter of the rounded corner is consistent with the distance from the front side to the rear side of the ceramic substrate;

[0014] The dielectric layer is circular, the diameter of the dielectric layer is consistent with the diameter of the rounded corner of the ceramic substrate, and the dielectric layer and the rounded corner of the ceramic substrate are concentric;

[0015] The electrode layer includes a first conductive metal layer and a second conductive metal layer on the same horizontal plane, the first conductive metal layer is in a circular ring shape, the second conductive metal layer is located inside the circular ring of the first conductive metal layer, an opening is provided on the right side of the first conductive metal layer, the positive lead-out electrode is electrically connected to the first conductive metal layer, and the negative lead-out electrode is electrically connected to the second conductive metal layer through the opening on the right side of the first conductive metal layer;

[0016] The ceramic electrode cover plate is in the shape of a rectangular plate placed horizontally, and a semicircular arc groove is provided on the left side of the top of the ceramic electrode cover plate, and the arc groove of the ceramic electrode cover plate abuts against the right side of the dielectric layer.

[0017] Preferably, the ceramic substrate is a rectangular plate with a "Y"-shaped vertical section, and the ceramic substrate is placed horizontally with the "Y"-shaped opening facing left;

[0018] The electrode layer includes a third conductive metal layer and a fourth conductive metal layer which are in the same horizontal plane and have a gap therebetween, the front side and the rear side of the left side of the ceramic substrate are respectively provided with an arc-shaped third conductive metal layer and a fourth conductive metal layer corresponding to the ceramic substrate, the positive lead electrode is electrically connected to the third conductive metal layer, and the negative lead electrode is electrically connected to the fourth conductive metal layer;

[0019] The dielectric layer is in the shape of a "U"-shaped plate with an opening facing left and placed horizontally, and an opening is provided at the middle position of the top right side of the dielectric layer to divide the dielectric layer into a front side and a rear side;

[0020] The ceramic electrode cover plate is in the shape of a rectangular plate placed horizontally, and a semicircular arc groove is provided on the left side of the top of the ceramic electrode cover plate, and the arc groove of the ceramic electrode cover plate abuts against the right side of the dielectric layer.

[0021] In summary, the utility model has the following beneficial effects:

[0022] 1. By setting the dielectric layer as a conductive ceramic, there can be many particles that can move freely in the dielectric layer;

[0023] After the electrode layer is passed through with current and pressure, the movable particles in the dielectric layer are affected by the electrode layer and gather on the upper surface of the dielectric layer. The charges on the upper surface of the dielectric layer will generate an electric field, which will further generate polarized charges at the bottom of the wafer placed on the dielectric layer. The charges distributed at the bottom of the wafer are opposite in polarity to those distributed on the upper surface of the dielectric layer, so that the wafer is adsorbed by the robot.

[0024] 2. By setting the dielectric layer as a conductive ceramic, when a voltage is applied to the electrode layer, the charges can move and concentrate on the upper surface of the dielectric layer, so that the distance between the positive and negative charges is close, so the attraction is strong and the wafer can be well adsorbed;

[0025] 3. By setting a number of protrusions, the contact surface between the dielectric layer and the wafer is not flat, which can control the adsorption force of the robot and reduce the contact area between the wafer and the dielectric layer. The protrusions form many tiny cavities on the contact surface, which can accommodate contaminated particles. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 It is a working principle diagram of Coulomb force adsorption in the background technology;

[0027] Figure 2 It is a schematic diagram of the overall structure in Example 1;

[0028] Figure 3It is a top side view of the exploded view of the overall structural modeling schematic diagram in Example 1;

[0029] Figure 4 It is a bottom side view of the exploded view of the overall structural modeling schematic diagram in Example 1;

[0030] Figure 5 It is a schematic diagram of the overall structure in Example 2;

[0031] Figure 6 It is a top side view of the exploded view of the overall structural modeling schematic diagram in Example 2;

[0032] Figure 7 It is a bottom side view of the exploded view of the overall structural modeling schematic diagram in Example 2.

[0033] In the figure, 1, ceramic substrate; 2, electrode layer; 3, dielectric layer; 4, positive lead electrode; 5, negative lead electrode; 6, ceramic electrode cover; 7, electrode column; 8, protrusion; 211, first conductive metal layer; 212, second conductive metal layer; 213, third conductive metal layer; 214, fourth conductive metal layer. DETAILED DESCRIPTION

[0034] The utility model is further described in detail below in conjunction with the accompanying drawings.

[0035] The same components are denoted by the same reference numerals. It should be noted that the words "front", "rear", "left", "right", "upper" and "lower" used in the following description refer to directions in the drawings.

[0036] Embodiment 1: A JR type ceramic electrostatic adsorption wafer handling robot, such as Figure 2 , Figure 3 , Figure 4 As shown, it includes a ceramic substrate 1, an electrode layer 2, a dielectric layer 3, a positive lead electrode 4, a negative lead electrode 5, a ceramic electrode cover plate 6, and two electrode columns 7;

[0037] The ceramic substrate 1 and the ceramic electrode cover plate 6 are both high-insulation alumina ceramics; a plurality of protrusions 8 are provided on the top of the dielectric layer 3, and cavities are formed between the protrusions 8. When the wafer is placed on the top of the dielectric layer 3, a micro electric field is formed and it is also convenient for heat dissipation at the bottom of the wafer; the dielectric layer 3 is aluminum nitride conductive ceramic.

[0038] The electrode layer 2 is fixed on the top left side of the ceramic substrate 1, the dielectric layer 3 is fixed on the top of the electrode layer 2, the positive lead electrode 4 and the negative lead electrode 5 are fixed on the top right side of the ceramic substrate 1, the positive lead electrode 4 and the negative lead electrode 5 are electrically connected to the electrode layer 2, the two electrode columns 7 are respectively fixed on the top right side of the ceramic electrode cover plate 6, the ceramic electrode cover plate 6 is fixed on the top right side of the ceramic substrate 1, the two electrode columns 7 are respectively electrically connected to the positive lead electrode 4 and the negative lead electrode 5, and the left side of the ceramic electrode cover plate 6 is against the right side of the dielectric layer 3.

[0039] The ceramic substrate 1 is in the shape of a rectangular plate placed horizontally, and a rounded corner is provided on the left side of the ceramic substrate 1, and the diameter of the rounded corner is consistent with the distance from the front side to the rear side of the ceramic substrate 1;

[0040] The dielectric layer 3 is circular, the diameter of the dielectric layer 3 is consistent with the diameter of the rounded corner of the ceramic substrate 1, and the dielectric layer 3 and the rounded corner of the ceramic substrate 1 are concentric;

[0041] The dielectric layer 3 is fixedly located on the top of the electrode layer 2. The electrode layer 2 includes a first conductive metal layer 211 and a second conductive metal layer 212 on the same horizontal plane. The first conductive metal layer 211 is in a ring shape, and the second conductive metal layer 212 is in a circular shape. The second conductive metal layer 212 is located inside the ring of the first conductive metal layer 211. A gap is left between the first conductive metal layer 211 and the second conductive metal layer 212. An opening is provided on the right side of the first conductive metal layer 211. The positive extraction electrode 4 is electrically connected to the first conductive metal layer 211, and the negative extraction electrode 5 is electrically connected to the second conductive metal layer 212 through the opening on the right side of the first conductive metal layer 211.

[0042] The ceramic electrode cover plate 6 is a rectangular plate placed horizontally, and a semicircular arc groove is provided on the left side of the top of the ceramic electrode cover plate 6. The arc groove of the ceramic electrode cover plate 6 is against the right side of the dielectric layer 3. Electrode lead holes are respectively left on the front and rear sides of the right side of the top of the ceramic electrode cover plate 6. Two electrode columns 7 are respectively fixed in the two electrode lead holes, and the two electrode columns 7 are respectively electrically connected to the positive lead electrode 4 and the negative lead electrode 5.

[0043] Embodiment 2: A JR type ceramic electrostatic adsorption wafer handling robot, such as Figure 5 , Figure 6 , Figure 7 As shown, it includes a ceramic substrate 1, an electrode layer 2, a dielectric layer 3, a positive lead electrode 4, a negative lead electrode 5, a ceramic electrode cover plate 6, and two electrode columns 7;

[0044] The ceramic substrate 1 is a rectangular plate with a vertical cross section in a "Y" shape. The ceramic substrate 1 is placed horizontally with the "Y"-shaped opening facing leftwards.

[0045] The electrode layer 2 includes a third conductive metal layer 213 and a fourth conductive metal layer 214 which are in the same horizontal plane and have a gap therebetween. The front side and the rear side of the left side of the ceramic substrate 1 are respectively provided with an arc-shaped third conductive metal layer 213 and a fourth conductive metal layer 214 corresponding to the ceramic substrate 1. The positive lead electrode 4 is electrically connected to the third conductive metal layer 213, and the negative lead electrode 5 is electrically connected to the fourth conductive metal layer 214.

[0046] The dielectric layer 3 is fixedly located on the top of the electrode layer 2. The dielectric layer 3 is a "U"-shaped plate with an opening facing left and placed horizontally. An opening is provided at the middle position of the top right side of the dielectric layer 3 to divide the dielectric layer 3 into a front side and a rear side.

[0047] The ceramic electrode cover plate 6 is a rectangular plate placed horizontally, and a semicircular arc groove is provided on the left side of the top of the ceramic electrode cover plate 6. The arc groove of the ceramic electrode cover plate 6 is against the right side of the dielectric layer 3. Electrode lead holes are respectively left on the front and rear sides of the right side of the top of the ceramic electrode cover plate 6. Two electrode columns 7 are respectively fixed in the two electrode lead holes, and the two electrode columns 7 are respectively electrically connected to the positive lead electrode 4 and the negative lead electrode 5.

[0048] Specific production process:

[0049] Step 1: using high-insulation alumina ceramic to make a ceramic substrate 1;

[0050] Step 2: A positive lead electrode 4 and a negative lead electrode 5 are sintered on the top of the ceramic substrate 1 using silver paste. The right side of the positive lead electrode 4 and the negative lead electrode 5 are located on the right side of the top of the ceramic substrate 1, and the left side of the positive lead electrode 4 and the negative lead electrode 5 are located on the left side of the top of the ceramic substrate 1.

[0051] Step 3: Use aluminum nitride ceramic to make the dielectric layer 3, and use a masked sandblasting method to process a plurality of bosses on the top of the dielectric layer 3;

[0052] Step 4: Sintering the conductive silver paste at the bottom of the dielectric layer 3 to form the electrode layer 2;

[0053] Step 5: Use high-insulation alumina ceramic to make a ceramic electrode cover plate 6, and leave electrode lead holes on the front side and the rear side of the top right side of the ceramic electrode cover plate 6 respectively;

[0054] Step 6: Use high-insulation epoxy glue to stick the ceramic electrode cover plate 6 to the top right side of the ceramic substrate 1;

[0055] Step 7: Use conductive glue and epoxy glue to bond and fix the dielectric layer 3 with the sintered electrode layer 2 to the top left side of the ceramic substrate 1, and the right side of the dielectric layer 3 abuts against the left side of the ceramic electrode cover plate 6;

[0056] The conductive glue is used to connect the electrode layer 2 with the positive lead electrode 4 and the negative lead electrode 5;

[0057] Step 8: Electrode columns 7 are fixed in the two electrode lead-out holes of the ceramic electrode cover plate 6, and the two electrode columns 7 are fixed in the two electrode lead-out holes by epoxy glue. The bottoms of the two electrode columns 7 are fixedly connected to the positive lead-out electrode 4 and the negative lead-out electrode 5 by conductive glue.

[0058] Specific working principle:

[0059] Adsorption principle: since the dielectric layer 3 is conductive, after the electrode layer 2 is pressurized by current, the movable particles in the dielectric layer 3 are affected by the electrode layer 2 and gather on the upper surface of the dielectric layer 3. The charges on the upper surface of the dielectric layer 3 will generate an electric field, which will further generate polarized charges at the bottom of the wafer placed on the dielectric layer 3. The charges distributed at the bottom of the wafer are opposite in polarity to the charges distributed on the upper surface of the dielectric layer 3, so that the wafer is adsorbed by the robot.

[0060] Release principle: after the current passing through the electrode layer 2 is cut off, since part of the charges distributed at the bottom of the wafer and the top of the dielectric layer 3 are free charges, there is still a certain electrostatic attraction due to residual charges, so the wafer will not be completely released. At this time, a reverse electrostatic voltage is required to forcibly eliminate the residual charge.

[0061] This specific embodiment is merely an explanation of the present invention and is not a limitation of the present invention. After reading this specification, those skilled in the art may make non-creative modifications to the present embodiment as needed, but such modifications are protected by patent law as long as they are within the scope of the claims of the present invention.

Claims

1. A JR type ceramic electrostatic adsorption wafer handling robot, characterized in that: It comprises a ceramic substrate (1), an electrode layer (2), a dielectric layer (3), a positive lead electrode (4), a negative lead electrode (5), a ceramic electrode cover plate (6), and two electrode columns (7); The electrode layer (2) is fixedly located on the left side of the top of the ceramic substrate (1), the dielectric layer (3) is fixedly located on the top of the electrode layer (2), the positive extraction electrode (4) and the negative extraction electrode (5) are fixedly located on the right side of the top of the ceramic substrate (1), the positive extraction electrode (4) and the negative extraction electrode (5) are both electrically connected to the electrode layer (2), the two electrode columns (7) are respectively fixedly located on the right side of the top of the ceramic electrode cover plate (6), the ceramic electrode cover plate (6) is fixedly located on the right side of the top of the ceramic substrate (1), the two electrode columns (7) are respectively electrically connected to the positive extraction electrode (4) and the negative extraction electrode (5), and the left side of the ceramic electrode cover plate (6) abuts against the right side of the dielectric layer (3); A plurality of protrusions (8) are provided on the top of the dielectric layer (3); The dielectric layer (3) is conductive ceramic.

2. A JR type ceramic electrostatic adsorption wafer handling robot according to claim 1, characterized in that: The ceramic substrate (1) is in the shape of a rectangular plate placed horizontally, and a rounded corner is provided on the left side of the ceramic substrate (1), wherein the diameter of the rounded corner is consistent with the distance from the front side to the rear side of the ceramic substrate (1); The dielectric layer (3) is circular, the diameter of the dielectric layer (3) is consistent with the diameter of the rounded corner of the ceramic substrate (1), and the dielectric layer (3) and the rounded corner of the ceramic substrate (1) are concentric; The electrode layer (2) comprises a first conductive metal layer (211) and a second conductive metal layer (212) located on the same horizontal plane, the first conductive metal layer (211) being in the shape of a circular ring, the second conductive metal layer (212) being located inside the circular ring of the first conductive metal layer (211), an opening being provided on the right side of the first conductive metal layer (211), the positive lead electrode (4) being electrically connected to the first conductive metal layer (211), and the negative lead electrode (5) being electrically connected to the second conductive metal layer (212) through the opening on the right side of the first conductive metal layer (211); The ceramic electrode cover plate (6) is in the shape of a rectangular plate placed horizontally, and a semicircular arc groove is provided on the left side of the top of the ceramic electrode cover plate (6). The arc groove of the ceramic electrode cover plate (6) abuts against the right side of the dielectric layer (3).

3. A JR type ceramic electrostatic adsorption wafer handling robot according to claim 1, characterized in that: The ceramic substrate (1) is in the shape of a rectangular plate with a vertical cross section in a "Y" shape. The ceramic substrate (1) is placed horizontally with the "Y"-shaped opening facing leftwards. The electrode layer (2) comprises a third conductive metal layer (213) and a fourth conductive metal layer (214) which are located in the same horizontal plane and have a gap therebetween; the front side and the rear side of the left side of the ceramic substrate (1) are respectively provided with an arc-shaped third conductive metal layer (213) and a fourth conductive metal layer (214) corresponding to the ceramic substrate (1); the positive lead electrode (4) is electrically connected to the third conductive metal layer (213); and the negative lead electrode (5) is electrically connected to the fourth conductive metal layer (214); The dielectric layer (3) is in the shape of a "U"-shaped plate with an opening facing left and placed horizontally, and an opening is provided at the middle position of the top right side of the dielectric layer (3) to divide the dielectric layer (3) into a front side and a rear side; The ceramic electrode cover plate (6) is in the shape of a rectangular plate placed horizontally, and a semicircular arc groove is provided on the left side of the top of the ceramic electrode cover plate (6). The arc groove of the ceramic electrode cover plate (6) abuts against the right side of the dielectric layer (3).

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