Isostatic pressing graphite forming device for polycrystalline silicon

Abstract

The utility model discloses an isostatic pressing graphite forming device for polycrystalline silicon, which comprises a high-pressure box, a wrapping mould, a first lifting plate, a second lifting plate and a linkage mechanism, the first lifting plate is arranged below the high-pressure box, and a plurality of rows of first ejector rods extending upwards into the high-pressure box are arranged on the first lifting plate at intervals. A plurality of rows of first ejector rods extending upwards into the high-voltage box are arranged on the first lifting plate, a plurality of rows of second ejector rods extending upwards into the high-voltage box are arranged on the second lifting plate, the first ejector rods and the second ejector rods are distributed at intervals, the wrapping mold is arranged in the high-voltage box and located above the first ejector rods and the second ejector rods, and the linkage mechanism comprises a gear motor, a gear, a first rack and a second rack. The gear is arranged on a rotating shaft of the gear motor and located between the adjacent first ejector rod and the second ejector rod. According to the isostatic pressing graphite forming device for the polycrystalline silicon, large-size isostatic pressing graphite can be formed, and the stress uniformity of graphite materials in the forming process is improved.

Description

Technical Field

[0001] The utility model relates to the field of isostatic graphite production equipment, in particular to an isostatic graphite molding device for polysilicon. Background Art

[0002] Due to the irreplaceable superiority of isostatic graphite materials, they are widely used in the production of polysilicon melting furnaces, heaters for compound semiconductor manufacturing, crucibles and other components.

[0003] As polysilicon products develop towards larger sizes and higher performance, there are higher requirements for isostatic graphite materials, which require isostatic graphite to develop towards larger specifications. Isostatic graphite materials can be formed in a high-pressure box using a sheath mold. By using the incompressible nature of the liquid medium and the ability to evenly transmit pressure, the sheath mold is evenly pressurized from all aspects to achieve isostatic pressing of graphite materials.

[0004] Since some isostatically pressed graphite products are large in size and the specifications of the sleeve mold are also relatively large, the sleeve mold sinks to the bottom of the high-pressure box. The contact area between the bottom surface of the sleeve mold and the high-pressure box is large and relatively close, which is not conducive to the liquid medium exerting pressure on the bottom surface of the sleeve mold, affecting the uniformity of the force on the isostatically pressed graphite material, and needs to be improved. Utility Model Content

[0005] The utility model aims to provide an isostatic graphite forming device for polysilicon, which can form large-size isostatic graphite materials and improve the uniformity of force during the forming process.

[0006] To achieve this purpose, the utility model adopts the following technical solutions:

[0007] A device for isostatic graphite forming for polysilicon, comprising: a high-pressure box, a sheath mold, a first lifting plate, a second lifting plate and a linkage mechanism, wherein the first lifting plate is arranged below the high-pressure box, and several rows of first push rods extending upward into the high-pressure box are arranged on the first lifting plate at intervals, the second lifting plate is arranged below the high-pressure box, and several rows of second push rods extending upward into the high-pressure box are arranged on the second lifting plate, the first push rods and the second push rods are distributed at intervals, the sheath mold is arranged in the high-pressure box and is located above the first push rod and the second push rod, the linkage mechanism comprises a reduction motor, a gear, a first rack and a second rack, the reduction motor is arranged at the bottom of the high-pressure box, the gear is arranged on the rotating shaft of the reduction motor and is located between the adjacent first push rod and the second push rod, the first rack is arranged on the corresponding side of the first push rod and meshes with one side of the gear, and the second rack is arranged on the corresponding side of the second push rod and meshes with the other side of the gear.

[0008] Wherein, a cover plate is arranged on the top of the high-voltage box.

[0009] Wherein, a liquid supply pipe joint is arranged at the lower part of one side of the high-pressure box.

[0010] Wherein, a pressure relief valve is arranged on one side of the high-pressure box.

[0011] The second lifting plate is located below the first lifting plate, and the first lifting plate is provided with an avoidance hole corresponding to the second push rod.

[0012] Wherein, the bottom of the high-voltage box is provided with guide holes corresponding to the first push rod and the second push rod one by one.

[0013] Wherein, a sealing ring is arranged in the inner wall of the guide hole.

[0014] The beneficial effects of the utility model are as follows: an isostatic graphite molding device for polysilicon fills graphite material in a large-sized sheath mold, uses a liquid medium in a high-pressure box to pressurize the surface of the sheath mold to form it, and uses a first push rod and a second push rod to alternately support the bottom surface of the sheath mold during the molding process, ensuring that the liquid medium applies pressure to the bottom surface of the sheath mold, thereby improving the uniformity of force on the graphite material during the molding process. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 It is a structural schematic diagram of the utility model;

[0016] Figure 2 yes Figure 1 Schematic diagram of the structure after the first lifting plate is lowered. DETAILED DESCRIPTION

[0017] Combine the following Figure 1 to Figure 2 The technical solution of the utility model is further illustrated by specific embodiments.

[0018] like Figure 1 The isostatic graphite forming device for polysilicon shown comprises: a high-pressure box 1, a sheath mold 5, a first lifting plate 10, a second lifting plate 13 and a linkage mechanism. A cover plate 4 is provided on the top of the high-pressure box 1 to seal the high-pressure box 1.

[0019] A liquid supply pipe joint 2 is provided at the lower part of one side of the high-pressure box 1, and an external pressure pipeline is connected to deliver the high-pressure liquid medium into the high-pressure box 1. In this embodiment, a pressure relief valve 3 is provided on one side of the high-pressure box 1, and the pressure relief valve 3 can be automatically opened and closed according to the working pressure of the molding system to avoid the problem of excessive pressure and protect the safety of the molding system.

[0020] The first lifting plate 10 is disposed below the high-voltage box 1. Several rows of first push rods 11 extending upward into the high-voltage box 1 are disposed on the first lifting plate 10 at intervals. Figure 1As shown, the encapsulating mold 5 is first supported by several rows of first ejector pins 11 .

[0021] The second lifting plate 13 is arranged below the high-voltage box 1, and is provided with several rows of second push rods 12 extending upward into the high-voltage box 1 on the second lifting plate 13. The second lifting plate 13 is located below the first lifting plate 10, and is provided with avoidance holes 14 corresponding to the second push rods 12 on the first lifting plate 10, which do not affect the lifting and lowering of the second push rods 12.

[0022] In this embodiment, the encapsulation mold 5 is arranged in the high-pressure box 1 and is located above the first ejector rod 11 and the second ejector rod 12. The first ejector rod 11 and the second ejector rod 12 are spaced apart. Figure 2 As shown, the support of the sheathing mold 5 can be performed alternately to ensure that the liquid medium applies pressure to the bottom surface of the sheathing mold 5, thereby improving the uniformity of the force applied to the graphite material in the sheathing mold 5 during the molding process.

[0023] In order to realize the alternating support of the first ejector rod 11 and the second ejector rod 12 on the encapsulation mold 5, reverse linkage is required. In this embodiment, the linkage mechanism includes a reduction motor 8, a gear 9, a first rack 7 and a second rack 6. The reduction motor 8 is arranged at the bottom of the high-voltage box 1 and can be fixed by screws, so the structure is stable.

[0024] The gear 9 is set on the rotating shaft of the reduction motor 8 and is located between the adjacent first push rod 11 and the second push rod 12. The first rack 7 is set on the side of the corresponding first push rod 11 and meshes with one side of the gear 9. The second rack 6 is set on the side of the corresponding second push rod 12 and meshes with the other side of the gear 9. When the gear 9 rotates under the action of the reduction motor 8, the first rack 7 and the second rack 6 can cooperate to realize the reverse linkage lifting and lowering of the first push rod 11 and the second push rod 12, thereby realizing alternating support for the sheathing mold 5 and avoiding contact between the bottom surface of the sheathing mold 5 and the bottom of the high-pressure box 1.

[0025] In order to guide the lifting of the first push rod 11 and the second push rod 12, guide holes 15 corresponding to the first push rod 11 and the second push rod 12 are provided at the bottom of the high-pressure box 1. In this embodiment, a sealing ring 16 is provided in the inner wall of the guide hole 15 for sealing to prevent leakage of the liquid medium during the lifting of the first push rod 11 and the second push rod 12.

[0026] The above contents are only preferred embodiments of the present invention. For ordinary technicians in this field, according to the concept of the present invention, there will be changes in the specific implementation methods and application scopes. The contents of this specification should not be understood as limiting the present invention.

Claims

1. An isostatic graphite forming device for polycrystalline silicon, characterized in that: include: A high-voltage box, a sheathing mold, a first lifting plate, a second lifting plate and a linkage mechanism, wherein the first lifting plate is arranged below the high-voltage box, and several rows of first push rods extending upward into the high-voltage box are arranged on the first lifting plate at intervals, the second lifting plate is arranged below the high-voltage box, and several rows of second push rods extending upward into the high-voltage box are arranged on the second lifting plate, the first push rod and the second push rod are distributed at intervals, the sheathing mold is arranged in the high-voltage box and is located above the first push rod and the second push rod, the linkage mechanism includes a reduction motor, a gear, a first rack and a second rack, the reduction motor is arranged at the bottom of the high-voltage box, the gear is arranged on the rotating shaft of the reduction motor and is located between the adjacent first push rod and the second push rod, the first rack is arranged on the corresponding side of the first push rod and meshes with one side of the gear, and the second rack is arranged on the corresponding side of the second push rod and meshes with the other side of the gear.

2. The isostatic graphite forming device for polycrystalline silicon according to claim 1, characterized in that: A cover plate is arranged on the top of the high-voltage box.

3. The isostatic graphite forming device for polycrystalline silicon according to claim 1, characterized in that: A liquid supply pipe joint is arranged at a lower part of one side of the high-pressure box.

4. The isostatic graphite forming device for polycrystalline silicon according to claim 1, characterized in that: A pressure relief valve is arranged on one side of the high pressure box.

5. The isostatic graphite forming device for polycrystalline silicon according to claim 1, characterized in that: The second lifting plate is located below the first lifting plate, and the first lifting plate is provided with an avoidance hole corresponding to the second push rod.

6. The isostatic graphite forming device for polycrystalline silicon according to claim 1, characterized in that: The bottom of the high-pressure box is provided with guide holes corresponding to the first push rod and the second push rod one by one.

7. The isostatic graphite forming device for polycrystalline silicon according to claim 6, characterized in that: A sealing ring is arranged in the inner wall of the guide hole.

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