Power module packaging structure and electronic equipment

Abstract

The utility model provides a power module packaging structure and an electronic device, and the structure comprises a first insulating layer which is provided with a first connecting hole; the first metal etching layer is connected with the first insulating layer and comprises a closed connecting region and an open connecting region which are spaced from each other; the first chip comprises a drain electrode, a source electrode and a grid electrode; the drain electrode electrical connection bridge is used for connecting the drain electrode of the first chip and one connection region of the first metal etching layer; the source electrode electrical connection bridge is used for connecting the source electrode of the first chip and the other connection area of the first metal etching layer; the grid electrode column is connected with the grid electrode of the first chip; the second metal etching layer comprises a power port and a control port; and the second insulating layer comprises a convex block and is provided with a second connecting hole and a third connecting hole. According to the utility model, packaging parasitic inductance can be effectively reduced, heat dissipation efficiency and working performance of the power module are improved, packaging volume is reduced, and power density is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor power devices, in particular to a power module packaging structure and electronic equipment. Background Art

[0002] Modern power modules are developing towards miniaturization, lightweighting, high power, and high efficiency, all with the ultimate goal of achieving efficient utilization of electrical energy. The new generation of wide-bandgap semiconductors offers significant advantages in switching speed and high-temperature resistance, playing a significant role in increasing the power density of power modules.

[0003] However, due to the large parasitic inductance of traditional power module packaging structures, serious overvoltage and oscillation problems will occur under high-frequency operating conditions. Wide-bandgap semiconductors represented by silicon carbide have significantly higher operating frequencies and temperatures than silicon semiconductors and are more sensitive to parasitic inductance. Moreover, as power density increases, a single heat dissipation path becomes increasingly inadequate, affecting the operating performance of the power module. Utility Model Content

[0004] In order to solve the above technical problems, the utility model provides a power module packaging structure and an electronic device, which can effectively reduce the packaging parasitic inductance, improve the heat dissipation efficiency and working performance of the power module, reduce the packaging volume and increase the power density.

[0005] The technical solutions adopted in this utility model are as follows:

[0006] A power module packaging structure comprises: a first insulating layer, wherein the first insulating layer is provided with a first connection hole; a first metal etching layer, wherein the first metal etching layer is connected to the first insulating layer, and the first metal etching layer comprises a closed connection area and an open connection area separated by a gap, wherein the upper surface of the closed connection area is covered by the first insulating layer, and a portion of the upper surface of the open connection area is exposed through the first connection hole, so that the power module packaging structure is electrically connected to an external circuit; a first chip, wherein the first chip comprises a drain, a source, and a gate; a drain electrical connection bridge, wherein the drain electrical connection bridge is used to connect the drain of the first chip and a connection area of ​​the first metal etching layer; a source An electrical connection bridge, the source electrical connection bridge is used to connect the source of the first chip and another connection area of ​​the first metal etching layer; a gate column, the gate column is connected to the gate of the first chip; a second metal etching layer, the second metal etching layer includes a power port and a control port, the power port is connected to the source electrical connection bridge, and the control port is connected to the gate column; a second insulating layer, the second insulating layer includes a bump and the second insulating layer is provided with a second connection hole and a third connection hole, the bump is used to insulate the power port from the control port, the position of the second connection hole corresponds to the power port, and the position of the third connection hole corresponds to the control port.

[0007] In addition, the power module packaging structure proposed above according to the present invention may also have the following additional technical features:

[0008] According to an embodiment of the present invention, the upper surface of the drain electrical connection bridge is connected to the lower surface of the first metal etching layer through the first solder layer.

[0009] According to one embodiment of the present invention, the first upper surface of the source electrical connection bridge is connected to the lower surface of the first metal etching layer through the second solder layer; the source of the first chip is connected to the second upper surface of the source electrical connection bridge through the third solder layer.

[0010] According to an embodiment of the present invention, the gate column is connected to the gate of the first chip through a fourth solder layer.

[0011] According to an embodiment of the present invention, a gate hole is provided on the source electrical connection bridge, a gap is formed between the gate hole and the gate column, and the gate column is connected to the gate of the first chip through the gate hole.

[0012] According to one embodiment of the present invention, the power module packaging structure includes first to Nth chips, and the drain electrical connection bridge and source electrical connection bridge corresponding to the same chip are respectively connected to different connection areas in the first metal etching layer, wherein N is an integer greater than 1.

[0013] Furthermore, the drain electrical connection bridge connected to the i-th chip and the source electrical connection bridge connected to the (i-1)-th chip are electrically connected through the same connection area in the first metal etching layer, where i is an integer greater than 1 and less than or equal to N.

[0014] According to an embodiment of the present invention, the invention further comprises: an epoxy insulation layer, wherein the epoxy insulation layer fills the internal gaps of the power module packaging structure.

[0015] In addition, to achieve the above-mentioned purpose, the present invention also provides an electronic device.

[0016] An electronic device includes the power module packaging structure described above.

[0017] Beneficial effects of the utility model:

[0018] The power module packaging structure of the present invention can effectively reduce the parasitic inductance of the package by using the drain electrical connection bridge and the source electrical connection bridge to replace the traditional bonding aluminum wire and copper wire; connection holes are opened on the first insulating layer and the second insulating layer to realize double-sided heat dissipation, which can not only improve the heat dissipation efficiency of the power module, but also facilitate the integration of external components and improve the working performance of the power module; the internal components are arranged between the first insulating layer and the second insulating layer, which reduces the package volume while improving the power density. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 This is a schematic structural diagram of a power module packaging structure according to an embodiment of the present utility model;

[0020] Figure 2 A top view of the first insulating layer according to an embodiment of the present invention;

[0021] Figure 3 This is a schematic structural diagram of the first insulating layer and the first metal etching layer according to an embodiment of the present utility model;

[0022] Figure 4 A bottom view of the second insulating layer according to an embodiment of the present invention;

[0023] Figure 5 This is a schematic structural diagram of the second insulating layer and the second metal etching layer according to an embodiment of the present invention;

[0024] Figure 6This is a schematic structural diagram of a power module packaging structure according to an embodiment of the present invention;

[0025] Figure 7 This is a schematic diagram of the connection relationship around the drain electrical connection bridge of one embodiment of the utility model;

[0026] Figure 8 This is a schematic diagram of the connection relationship around the first upper surface of the source electrical connection bridge according to one embodiment of the present invention;

[0027] Figure 9 This is a schematic structural diagram of a source electrical connection bridge according to an embodiment of the present invention;

[0028] Figure 10 This is a schematic diagram of the connection relationship between the i-th chip and the i-1-th chip according to an embodiment of the present invention.

[0029] Reference numerals:

[0030] 10-first insulating layer, 11-first connection hole, 20-first metal etching layer, 21-closed connection area, 22-open connection area, 30-first chip, 40-drain electrical connection bridge, 50-source electrical connection bridge, 51-gate hole, 60-gate pillar, 70-second metal etching layer, 71-power port, 72-control port, 80-second insulating layer, 81-bump, 82-second connection hole, 83-third connection hole, 90-first solder layer, 100-second solder layer, 110-third solder layer, 120-fourth solder layer. DETAILED DESCRIPTION

[0031] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0032] like Figure 1-5As shown, the power module packaging structure of the embodiment of the present invention includes: a first insulating layer 10, a first metal etching layer 20, a first chip 30, a drain electrical connection bridge 40, a source electrical connection bridge 50, a gate pillar 60, a second metal etching layer 70, and a second insulating layer 80, wherein the first insulating layer 10 is provided with a first connection hole 11; the first metal etching layer 20 is connected to the first insulating layer 10, and the first metal etching layer 20 includes a closed connection area 21 and an open connection area 22 spaced apart, wherein the upper surface of the closed connection area 21 is covered by the first insulating layer 10, and a portion of the upper surface of the open connection area 22 is exposed through the first connection hole 11, so that the power module packaging structure is electrically connected to the external circuit; the first chip 30 includes a drain, a source and a gate; the drain The electrical connection bridge 40 is used to connect the drain of the first chip 30 and a connection area of ​​the first metal etching layer 20; the source electrical connection bridge 50 is used to connect the source of the first chip and another connection area of ​​the first metal etching layer 20; the gate column 60 is connected to the gate of the first chip 30; the second metal etching layer 70 includes a power port 71 and a control port 72, the power port 71 is connected to the source electrical connection bridge 50, and the control port 72 is connected to the gate column 60; the second insulating layer 80 includes a bump 81 and the second insulating layer 80 is provided with a second connection hole 82 and a third connection hole 83, the bump 81 is used to insulate the power port 71 from the control port 72, the position of the second connection hole 82 corresponds to the power port 71, and the position of the third connection hole 83 corresponds to the control port 72.

[0033] It is understandable that Figure 1 It only represents one connection method between the drain electrical connection bridge 40, the source electrical connection bridge 50 and the first metal etching layer 20. When the drain electrical connection bridge 40 connected to the drain of the first chip 30 is connected to the open connection area 22, the source electrical connection bridge 50 connected to the source of the first chip 30 is connected to the closed connection area 21; when the drain electrical connection bridge 40 connected to the drain of the first chip 30 is connected to the closed connection area 21, the source electrical connection bridge 50 connected to the source of the first chip 30 is connected to the open connection area 22. The power module packaging module may also include other components, which can be electrically connected to the first chip 30 through the closed connection area 21.

[0034] The first chip 30 may be a wide bandgap semiconductor, such as silicon carbide. The first chip 30 may also be a silicon semiconductor, which is not limited in this embodiment.

[0035] The power module packaging structure of the embodiment of the present invention uses a drain electrical connection bridge 40 and a source electrical connection bridge 50 to replace traditional bonding aluminum wires and copper wires to connect the first chip 30 and the first metal etching layer 20, which can effectively reduce the package parasitic inductance; since connection holes are provided on the first insulating layer 10 and the second insulating layer 80, the first metal etching layer 20 and the second metal etching layer 70 can be partially exposed from the first insulating layer 10 and the second insulating layer 80 to achieve double-sided heat dissipation, which not only improves the heat dissipation efficiency of the power module, but also can be connected to the external circuit, facilitating the integration of more external components to achieve better working performance; the components inside the power module packaging structure are all arranged between the first insulating layer 10 and the second insulating layer 80, which reduces the package volume while improving the power density.

[0036] like Figure 6 and Figure 7 As shown, in one embodiment of the present invention, the upper surface of the drain electrical connection bridge 40 can be connected to the lower surface of the first metal etching layer 20 through the first solder layer 90 .

[0037] like Figure 6-8 As shown, in one embodiment of the present invention, the first upper surface of the source electrical connection bridge 50 can be connected to the lower surface of the first metal etching layer 20 through the second solder layer 100; the source of the first chip 30 can be connected to the second upper surface of the source electrical connection bridge 50 through the third solder layer 110.

[0038] like Figure 6 As shown, in one embodiment of the present invention, the gate pillar 60 may be connected to the gate of the first chip 30 through the fourth solder layer 120 .

[0039] In one embodiment of the present invention, the solder layer may be solder paste printed on the metal etching layer, the electrical connection bridge, the gate pillar 60 or the first chip 30 .

[0040] In another embodiment of the present invention, the solder layer may be a prefabricated solder layer disposed on the metal etching layer, the electrical connection bridge, the gate pillar 60 or the first chip 30 , which can achieve high-precision welding.

[0041] like Figure 6 and Figure 9 As shown, in one embodiment of the present invention, a gate hole 51 may be provided on the source electrical connection bridge 50. There is a gap between the gate hole 51 and the gate pillar 60. The gate pillar 50 is connected to the gate of the first chip 30 through the gate hole 51. The provision of the gate hole 51 can prevent solder splashes from the first chip 30 during soldering and landing on the connection area of ​​the source electrical connection bridge 50, causing a short circuit.

[0042] In one embodiment of the present invention, the power module packaging structure may include first to Nth chips, and the drain electrical connection bridge 40 and the source electrical connection bridge 50 corresponding to the same chip are respectively connected to different connection areas in the first metal etching layer 20, where N is an integer greater than 1.

[0043] like Figure 10 As shown, in one embodiment of the present invention, the drain electrical connection bridge connected to the i-th chip and the source electrical connection bridge connected to the i-1-th chip can be electrically connected through the same connection area in the first metal etching layer 20, where i is an integer greater than 1 and less than or equal to N.

[0044] It can be understood that the i-th chip is not only electrically connected to the i-1-th chip through the same connection area in the first metal etching layer 20, but the i-th chip can also be electrically connected to other chips through the same connection area in the first metal etching layer 20. Therefore, the electrical connection between different chips does not require other bonding wires, which effectively reduces the package parasitic inductance and improves the power density of the power module packaging structure.

[0045] In one embodiment of the present invention, the power module packaging structure may further include an epoxy insulation layer, which fills the internal gaps of the power module packaging structure. The epoxy insulation layer can not only fill the relative gaps between the first insulation layer 10 and the second insulation layer 80 to achieve electrical isolation, but also protect and fix the power module packaging structure.

[0046] According to the power module packaging structure of the embodiment of the present invention, the traditional bonding aluminum wire and copper wire are replaced by the drain electrical connection bridge and the source electrical connection bridge, which can effectively reduce the package parasitic inductance; connection holes are opened on the first insulating layer and the second insulating layer to realize double-sided heat dissipation, which can not only improve the heat dissipation efficiency of the power module, but also facilitate the integration of external components and improve the working performance of the power module; the internal components are arranged between the first insulating layer and the second insulating layer, which reduces the package volume while improving the power density.

[0047] Based on the power module packaging structure of the above embodiment, the present utility model also provides an electronic device.

[0048] An electronic device in an embodiment of the present invention includes the power module packaging structure of any of the above embodiments of the present invention.

[0049] According to the electronic device of the embodiment of the present invention, the traditional bonding aluminum wire and copper wire are replaced by the drain electrical connection bridge and the source electrical connection bridge, which can effectively reduce the parasitic inductance of the package; connection holes are opened on the first insulating layer and the second insulating layer to realize double-sided heat dissipation, which can not only improve the heat dissipation efficiency of the power module, but also facilitate the integration of external components and improve the working performance of the power module; the internal components are arranged between the first insulating layer and the second insulating layer, which reduces the package volume while improving the power density.

[0050] In the description of this utility model, the terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of the technical features indicated. Therefore, a feature specified as "first" or "second" may explicitly or implicitly include one or more of such features. "Multiple" means two or more, unless otherwise specifically defined.

[0051] In this utility model, unless otherwise specified or limited, the terms "installed," "connected," "connect," "fixed," etc. should be understood in a broad sense. For example, they can refer to fixed connection, detachable connection, or integration; mechanical connection, electrical connection; direct connection, indirect connection through an intermediate medium, internal communication between two components, or interaction between two components. Those skilled in the art will understand the specific meanings of the above terms in this utility model based on specific circumstances.

[0052] In the present invention, unless otherwise expressly specified or limited, when a first feature is "above" or "below" a second feature, it may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediary. Furthermore, when a first feature is "above," "above," or "above" a second feature, it may mean that the first feature is directly above or diagonally above the second feature, or simply means that the first feature is at a higher level than the second feature. When a first feature is "below," "below," or "below" a second feature, it may mean that the first feature is directly below or diagonally below the second feature, or simply means that the first feature is at a lower level than the second feature.

[0053] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine different embodiments or examples described in this specification and features of different embodiments or examples without contradiction.

[0054] Although the embodiments of the present invention have been shown and described above, it can be understood that the above embodiments are illustrative and cannot be understood as limitations on the present invention. Ordinary technicians in this field can change, modify, replace and modify the above embodiments within the scope of the present invention.

Claims

1. A power module packaging structure, characterized in that: include: A first insulating layer, wherein the first insulating layer is provided with a first connecting hole; a first metal etching layer, the first metal etching layer being connected to the first insulating layer, the first metal etching layer comprising a closed connection area and an open connection area separated by a gap, wherein an upper surface of the closed connection area is covered by the first insulating layer, and a portion of an upper surface of the open connection area is exposed through a first connection hole, so that the power module packaging structure is electrically connected to an external circuit; A first chip, the first chip comprising a drain, a source and a gate; A drain electrical connection bridge, the drain electrical connection bridge is used to connect the drain of the first chip and a connection area of ​​the first metal etching layer; A source electrical connection bridge, the source electrical connection bridge is used to connect the source of the first chip and another connection area of ​​the first metal etching layer; A gate column connected to a gate of the first chip; A second metal etching layer, the second metal etching layer comprising a power port and a control port, the power port is connected to the source electrical connection bridge, and the control port is connected to the gate column; The second insulating layer includes a bump and is provided with a second connection hole and a third connection hole, the bump is used to insulate the power port from the control port, the second connection hole is located corresponding to the power port, and the third connection hole is located corresponding to the control port.

2. The power module packaging structure according to claim 1, characterized in that: The upper surface of the drain electrical connection bridge is connected to the lower surface of the first metal etching layer through a first solder layer.

3. The power module packaging structure according to claim 1, characterized in that: The first upper surface of the source electrical connection bridge is connected to the lower surface of the first metal etching layer through a second solder layer; the source of the first chip is connected to the second upper surface of the source electrical connection bridge through a third solder layer.

4. The power module packaging structure according to claim 1, characterized in that: The gate column is connected to the gate of the first chip through a fourth solder layer.

5. The power module packaging structure according to claim 1, characterized in that: A gate hole is provided on the source electrical connection bridge, a gap is provided between the gate hole and the gate column, and the gate column is connected to the gate of the first chip through the gate hole.

6. The power module packaging structure according to any one of claims 1 to 5, characterized in that: The power module packaging structure includes first to Nth chips, and the drain electrical connection bridge and the source electrical connection bridge corresponding to the same chip are respectively connected to different connection areas in the first metal etching layer, wherein N is an integer greater than 1.

7. The power module packaging structure according to claim 6, characterized in that: The drain electrical connection bridge connected to the i-th chip and the source electrical connection bridge connected to the (i-1)-th chip are electrically connected through the same connection area in the first metal etching layer, where i is an integer greater than 1 and less than or equal to N.

8. The power module packaging structure according to claim 7, characterized in that: Also includes: An epoxy insulating layer fills the internal gap of the power module packaging structure.

9. An electronic device, characterized in that: include: A power module packaging structure according to any one of claims 1 to 8.

Images