Quartz crucible for continuous czochralski silicon, crucible assembly and single crystal furnace

Abstract

The utility model relates to the technical field of monocrystalline silicon manufacturing, in particular to a quartz crucible for continuous czochralski monocrystalline silicon, a crucible assembly and a single crystal furnace. The quartz crucible for continuous czochralski silicon comprises a crucible main body, an isolation cylinder is movably arranged in the crucible main body, and the isolation cylinder divides the crucible main body into an internal growth cavity and a peripheral feeding cavity in the radial direction; a through hole is formed in the upper portion of the side wall of the isolation cylinder, and the upper edge opening of the crucible body is higher than the through hole and lower than the upper edge opening of the isolation cylinder. A notch is formed in the bottom of the side wall of the isolation cylinder, and the growth cavity is communicated with the feeding cavity through the through hole and the notch. The through hole is additionally formed in the upper part of the isolation cylinder, so that the technical problems that the silicon liquid conveying path of the continuous czochralski silicon is long and the pollution caused by the crucible is serious are solved.

Description

Technical Field

[0001] The present application relates to the technical field of single crystal silicon manufacturing, and in particular to a quartz crucible, a crucible assembly and a single crystal furnace for continuous vertical pulling of single crystal silicon. Background Art

[0002] Continuous Czochralski (CCZ) refers to a method of continuously pulling single crystal silicon by using two or more layers of inner and outer quartz crucibles as silicon liquid containers, pulling single crystals in the inner crucible, and simultaneously adding materials and melting in the outer crucible. In the existing quartz crucible structure, a through hole is provided at the bottom of the inner crucible, so that the silicon liquid in the outer crucible can enter the inner crucible to ensure the feeding requirements of continuous crystal pulling.

[0003] For example, patent CN203487280U discloses a quartz crucible, including a crucible body, the crucible body including a crucible inner wall, a crucible outer wall and a crucible bottom wall, the bottom of the crucible inner wall having a through hole; a protective coating is coated on the contact surface between the crucible body and the silicon melt; the quartz crucible forms an annular liquid addition area between the crucible inner wall and the crucible outer wall for continuous injection of solid or liquid silicon material. Compared with conventional technologies, solid or liquid silicon material can be temperature mixed and flow rate buffered in the annular liquid addition area, thereby reducing the temperature disturbance of the silicon melt to the crystal growth environment and improving the quality of crystal growth. The protective coating coated on the crucible body can reduce the damage of quartz to the crucible body due to the "crystallization" phenomenon, effectively prevent the probability of the silicon melt reacting with the crucible body, and improve the purity of single crystal silicon while increasing the service life of the quartz crucible.

[0004] For another example, patent CN115478319A discloses a quartz crucible, a crucible assembly and a single crystal furnace. The quartz crucible includes a crucible body, a shunt tube is arranged inside the crucible body, and the shunt tube is configured to divide the crucible body along its radial direction into an inner cavity located inside the shunt tube and an outer cavity arranged around the outer periphery of the shunt tube; a through hole is arranged on the side wall of the shunt tube so that the outer cavity and the inner cavity are connected. The shunt tube is arranged to isolate the unstable convection of the outer core natural convection to the outer cavity, thereby alleviating the problem of uneven oxygen content in the radial direction of the crystal rod caused by the unstable convection.

[0005] For another example, patent CN117210931A discloses a continuous Czochralski single crystal feeding crucible and single crystal furnace, the single crystal furnace includes a furnace body; a guide tube, which can be lifted and supported in the furnace body, when Czochralski single crystal, the bottom of the guide tube is 20 to 30 mm away from the growth liquid surface in the quartz crucible; the feeding crucible includes a quartz crucible and a quartz ring, the quartz ring is hoisted on the guide tube, and when Czochralski single crystal, the bottom of the quartz ring is immersed in the growth liquid surface in the quartz crucible by at least 50 mm. This application has the effect of reducing dissolved oxygen in the melt and achieving high-quality continuous rod pulling under the premise of ensuring a stable liquid surface and temperature around the growing crystal.

[0006] However, in the above scheme, there are problems such as more impurities in the single crystal silicon or a relatively complex crucible structure. Therefore, it is necessary to provide a quartz crucible for continuous vertical pulling of single crystal silicon with a simple structure and good single crystal silicon quality. Utility Model Content

[0007] In order to solve the above problems, the present application provides a quartz crucible, a crucible assembly and a single crystal furnace for continuous vertical pulling of single crystal silicon, which improves the growth quality of single crystal silicon by optimizing the crucible structure.

[0008] In order to achieve the above purpose, this application adopts the following technical solutions:

[0009] In a first aspect, the present application provides a quartz crucible for continuous Czochralski silicon monocrystalline production, comprising a crucible body, wherein an isolation tube is movably disposed in the crucible body, and the isolation tube radially divides the crucible body into an inner growth chamber and an outer feeding chamber;

[0010] A through hole is provided on the upper part of the side wall of the isolation cylinder, and the upper edge of the crucible body is higher than the through hole and lower than the upper edge of the isolation cylinder; a notch is provided on the bottom of the side wall of the isolation cylinder, and the growth chamber is connected with the feeding chamber through the through hole and the notch.

[0011] The inventor has found that in the existing quartz crucible, the new silicon liquid formed after the silicon material is melted is transported through the opening or reserved space at the bottom of the inner crucible by continuously adding materials to the outer crucible. The silicon liquid has a long transportation path and a long contact time with the crucible. The crucible is the main source of impurities in Czochralski silicon. The silicon liquid produced by the melting of pure materials has a long distance and long contact with the crucible, which increases the impurity content and reduces the quality of Czochralski silicon. In this application, by adding a through hole on the upper part of the isolation tube, the technical problem of the long transportation path of silicon liquid and the large crucible contamination of continuous Czochralski silicon is solved.

[0012] In some embodiments, the upper edge of the crucible body is 20-30 cm higher than the through hole; and / or the upper edge of the crucible body is 1-10 cm lower than the upper edge of the isolation tube.

[0013] In some embodiments, the through holes and the notches are evenly distributed along the circumference of the isolation cylinder.

[0014] In some embodiments, the through holes and the notches are staggered.

[0015] In some embodiments, the number of the through holes is greater than or equal to the number of the notches.

[0016] In some embodiments, the number of the through holes is 4-20, the number of the notches is 2-10, and the ratio of the number of the through holes to the number of the notches is (1-2):1.

[0017] In some embodiments, a slot is provided at the bottom of the crucible body, and the isolation tube is fixed in the crucible body by snapping into the slot.

[0018] In some embodiments, the slot is a discontinuous structure with a fracture arranged along the circumferential direction, the gap of the isolation cylinder corresponds to the position of the fracture of the slot, and the silicon melt at the bottom of the feeding chamber flows into the growth chamber through the gap.

[0019] In a second aspect, the present application provides a crucible assembly, comprising the above-mentioned quartz crucible for continuous Czochralski silicon single crystal pulling, and a graphite crucible sleeved on the outside of the quartz crucible for continuous Czochralski silicon single crystal pulling.

[0020] In a third aspect, the present application provides a single crystal furnace, comprising the crucible assembly described above.

[0021] Compared with the prior art, the beneficial effects of this application are:

[0022] The present application provides a quartz crucible for continuous straight-pulling of single-crystal silicon. By arranging a through hole on the upper part of the side wall of an isolating cylinder, the height of the through hole is lower than the upper edge of the crucible body, so that in the normal fixed liquid level mode of crystal pulling process, since the liquid level is higher than the through hole, the newly generated pure silicon liquid after adding does not need to pass through the bottom of the crucible body and the isolating cylinder, and can be directly transported through the through hole on the isolating cylinder in the shortest distance to the crystal growth area, that is, the upper part of the growth chamber, to replenish the inner silicon liquid consumed by crystal pulling. While ensuring the continuity of the crystal pulling process, the impurity pollution caused by the long-distance transportation process is effectively reduced, thereby improving the quality of straight-pulled single crystals. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0024] Figure 1 This is a schematic diagram of the overall structure of a quartz crucible used for continuous vertical pulling of single crystal silicon in this application;

[0025] Figure 2 This is a schematic diagram of the structure of the isolation cylinder of this application;

[0026] Figure 3This is an overall side cross-sectional view of a quartz crucible used for continuous vertical pulling of single crystal silicon in this application.

[0027] In the figure: 1-crucible body; 2-isolation tube; 3-growth chamber; 4-feeding chamber; 5-through hole; 6-notch; 7-annular groove. DETAILED DESCRIPTION

[0028] In order to make the purpose, technical solution and advantages of the embodiment of the present application clearer, the technical solution of the embodiment of the present application will be clearly and completely described below in conjunction with the drawings of the embodiment of the present application. Obviously, the described embodiment is a part of the embodiment of the present application, not all of the embodiments. Based on the described embodiment of the present application, all other embodiments obtained by ordinary technicians in this field belong to the scope of protection of this application.

[0029] In the description of this application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the drawings, and are only for the convenience of describing this application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on this application. In addition, the terms "first", "second", and "third" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance.

[0030] The present application is further described in detail below with reference to the accompanying drawings.

[0031] refer to Figure 1-3 One or more embodiments of the present application provide a quartz crucible for continuous vertical pulling of single crystal silicon, including a crucible body 1, an isolation tube 2 movably arranged inside the crucible body 1, the isolation tube 2 radially divides the crucible body 1 into an internal growth chamber 3 and an outer feeding chamber 4; a through hole 5 is arranged on the upper part of the side wall of the isolation tube 2, the upper edge of the crucible body 1 is higher than the through hole 5 and lower than the upper edge of the isolation tube 2; a notch 6 is arranged on the bottom of the side wall of the isolation tube 2, the growth chamber 3 is connected with the feeding chamber 4 through the through hole 5 and the notch 6.

[0032] Excessive impurities such as oxygen content in single crystal silicon are an important cause of many defects, which will also affect the minority carrier lifetime and resistivity, and is not conducive to the preparation of subsequent battery products. In the process of preparing single crystal silicon by the CZ method, the sources of oxygen can be roughly divided into two types: one is the oxygen in the silicon raw material; the other is the oxygen in the quartz crucible. Most of the silicon raw materials are polycrystalline silicon treated by reduction method, with a purity of 6N-7N, and the number of oxygen atoms inside is usually controlled at 10 16 ~10 17 atoms / cm 3It is much lower than the amount of oxygen entering the quartz crucible, so the oxygen in the CZ single crystal silicon mainly comes from the dissolution of the quartz crucible.

[0033] The transmission process of oxygen from the quartz crucible into the silicon monocrystalline can be roughly divided into four stages: dissolution, diffusion, volatilization and incorporation; the larger the contact area between the quartz crucible and the silicon liquid, the more oxygen in the crucible enters the silicon monocrystalline, and the greater the impact on the silicon monocrystalline. The continuous CZ-pulling silicon monocrystalline process adopts a double-layer crucible design to isolate the feeding jacket, which greatly reduces the convection inside the silicon liquid during the feeding process, thereby inhibiting the diffusion of oxygen and facilitating the acquisition of higher quality silicon crystals.

[0034] However, the inventors of the present application have discovered in practice that since the existing double-layer crucible usually has an opening at the bottom of the inner crucible for transferring silicon liquid, under this structure, the silicon liquid produced after the continuous addition of pure silicon material is melted needs to go through a transportation process from the top of the outer crucible to the bottom of the inner crucible to the top of the inner crucible (crystal growth area). The long-distance transportation prolongs the contact time between the silicon liquid and the inner and outer crucibles, resulting in an increase in impurities in the silicon liquid, causing the impurity content of the grown crystals to be higher.

[0035] The inventors set a through hole 5 on the upper part of the side wall of the isolation tube 2, and the height of the through hole 5 is lower than the upper edge of the crucible body 1. In this way, in the normal fixed liquid level mode of crystal pulling, since the liquid level is higher than the through hole 5, the newly generated pure silicon liquid after adding the material does not need to pass through the bottom of the crucible body 1 and the isolation tube 2, and can be directly transported through the through hole 5 on the isolation tube 2 in the shortest distance to the crystal growth area, i.e., the upper part of the growth chamber 3, to replenish the inner silicon liquid consumed by crystal pulling. While ensuring the continuity of the crystal pulling process, it effectively reduces the impurity pollution caused by the long-distance transportation process, thereby improving the quality of the direct-pulled single crystal.

[0036] When entering the crystal growth process stage, the temperature of the outer crucible body 1 is higher, and the outer feeding chamber 4 is used to melt the newly added silicon material; the inner isolation tube 2 has a heat insulation effect, which makes the temperature of the silicon liquid in the internal growth chamber 3 lower, which is used for crystal growth; the isolation tube 3 is also used to prevent the vibration of the silicon liquid in the feeding chamber 4 from affecting the stability of the silicon liquid in the growth chamber 3 when adding materials, thereby maintaining the stability of the solid-liquid interface during the crystal pulling process and improving the quality of the silicon single crystal. By setting the upper edge of the crucible body 1 lower than the upper edge of the isolation tube 2, the isolation tube 2 can improve the thermal radiation insulation of the heater, and better maintain the low temperature state of crystal growth in the growth chamber 3.

[0037] In some embodiments, the crucible body 1 is a cylindrical structure with an opening at the upper end, and the wall thickness of the crucible body 1 is 2-3 cm, for example, it can be 2 cm, 2.2 cm, 2.5 cm, 2.8 cm, 3 cm, etc.; the isolation tube 2 is a cylindrical structure with openings at the top and bottom, and the wall thickness of the isolation tube 2 is 2-4 cm, for example, it can be 2 cm, 2.5 cm, 3 cm, 3.5 cm, 4 cm, etc.; the isolation tube 2 is movably arranged inside the crucible body 1, and the isolation tube 2 is a growth chamber 3, and the interlayer between the isolation tube 2 and the crucible body 1 is a feeding chamber 4, and the isolation tube 2 is a cylindrical structure with openings at the top and bottom, and the wall thickness of the isolation tube 2 is 2-4 cm, for example, it can be 2 cm, 2.5 cm, 3 cm, 3.5 cm, 4 cm, etc. The distance between the outer wall of the tube 2 and the inner wall of the crucible body 1 is 5-10cm, that is, the radial width of the feeding chamber 4 is 5-10cm, for example, it can be 5cm, 6cm, 7cm, 8cm, 9cm, 10cm, etc. The larger the radial width of the feeding chamber 4, the larger the space provided for continuous feeding; it should be noted that the wall thickness of the crucible body 1, the wall thickness of the isolation tube 2 and the radial width of the feeding chamber 4 are coordinated with each other, so that the temperature in the internal growth chamber 3 can be maintained at a low temperature state for crystal growth while ensuring normal heat transfer.

[0038] In some embodiments, the upper edge of the crucible body 1 is 20-30 cm higher than the through hole 5, for example, the upper edge of the crucible body 1 is 20 cm, 22 cm, 24 cm, 25 cm, 28 cm, 30 cm, etc. higher than the through hole 5; and / or, the upper edge of the crucible body 1 is 1-10 cm lower than the upper edge of the isolation tube 2, for example, the upper edge of the crucible body 1 is 1 cm, 3 cm, 5 cm, 6 cm, 8 cm, 10 cm, etc. lower than the upper edge of the isolation tube 2.

[0039] The upper edge of the crucible body 1 is 20-30 cm higher than the through hole 5, and the upper edge of the crucible body 1 is 1-10 cm lower than the upper edge of the isolation tube 2, that is, the upper edge of the isolation tube 2 is 21-40 cm higher than the through hole 5. The inventors of the present application found in practice that the through hole 5 is provided on the upper part of the isolation tube 2 so that the silicon liquid in the feeding chamber 4 can flow into the growth chamber 3 through the through hole 5 for silicon liquid replenishment, thereby reducing the movement path of the silicon liquid, reducing the impurity doping in the crucible body 1 and the isolation tube 2, and improving the quality of the single crystal silicon.

[0040] On the one hand, the higher the position of the through hole 5 is, the closer it is to the silicon liquid level in the feeding chamber 4. At this time, the moving path of the replenished silicon liquid is shorter, and the silicon liquid is less affected by impurities in the crucible body 1 and the isolation tube 2, which is more conducive to improving the quality of the single crystal silicon. On the other hand, if the position of the through hole 5 is too high, it is too close to the silicon liquid level in the feeding chamber 4. The vibration of the silicon liquid level during continuous feeding will affect the stability of the silicon liquid at the through hole 5, making the silicon liquid replenished into the growth chamber 3 through the through hole 5 more volatile, affecting the stability of the crystal pulling process and easily causing the problem of single crystal silicon breakage. Moreover, when the position of the through hole 5 is too high, the distance between the silicon liquid level and the through hole 5 is short, making it difficult to ensure sufficient heat transfer and melting of the newly added silicon material. It is also possible that the silicon material is incompletely melted and directly enters the growth chamber, affecting the crystal growth.

[0041] The inventors of the present application discovered through experimental research that since the liquid level of the silicon liquid in the feeding chamber is usually within 10 cm from the upper edge of the crucible body 1, when the through hole 5 on the side wall of the isolation tube 2 is 20-30 cm lower than the upper edge of the crucible body 1, the height of the through hole 5 is optimal. During the continuous feeding process, the newly added silicon material can be completely melted and the newly melted silicon liquid can be directly added to the growth chamber 3 through the through hole without affecting or having little impact on the crystal growth therein.

[0042] In some embodiments, the through holes 5 and the notches 6 are evenly distributed along the circumference of the isolation cylinder 2 .

[0043] In at least one embodiment, the through holes 5 are evenly distributed along the circumference of the upper part of the wall of the isolation tube 2, and the notches 6 are evenly distributed along the circumference of the bottom of the wall of the isolation tube 2, so that the silicon liquid in the feeding chamber 4 can be evenly transported from the through holes 5 at different positions to the growth chamber 3 during the continuous feeding process, and after the feeding is stopped at the end stage of crystal pulling, the silicon liquid located at the lower part of the through holes 5 in the feeding chamber 4 can be evenly transported to the growth chamber 3 from the notches 6 at different positions, thereby ensuring that the silicon liquid level in the growth chamber 3 remains stable during the continuous feeding stage and the crystals in the growth chamber 3 can grow stably after the feeding is stopped.

[0044] In some embodiments, the through holes 5 and the notches 6 are staggered.

[0045] A through hole 5 and a notch 6 are provided on the wall of the isolation tube 2, and the through hole 5 and the notch 6 have different shapes, which will affect the overall structural uniformity of the isolation tube 2. By staggering the through hole 5 and the notch 6, it is helpful to maintain the structural strength of the isolation tube 2, thereby ensuring the normal crystal pulling operation.

[0046] In some embodiments, the number of through holes 5 is greater than or equal to the number of notches 6 .

[0047] In at least some embodiments, the number of through holes 5 is 4-20, for example, 4, 8, 10, 15, 16, 20, etc.; the number of notches 6 is 2-10, for example, 2, 4, 5, 8, 10, etc., and the ratio of the number of through holes 5 to the number of notches 6 is (1-2): 1. In at least one embodiment, the ratio of the number of through holes 5 to the number of notches 6 is (1.5-2): 1.

[0048] Since the feeding chamber 4 is connected to the growth chamber 3 through the through hole 5 and the notch 6 at the same time, that is to say, the silicon liquid in the feeding chamber 4 can be transported to the growth chamber 3 through the through hole 5 and / or the notch 6. In order to ensure that the silicon liquid of the new melt in the feeding chamber 4 can be transported from the through hole 5 to the growth chamber 3 at the shortest transport distance during the continuous feeding stage, it is necessary to ensure that the through hole 5 can transport the silicon liquid in time. Therefore, when the number of through holes 5 is greater than or equal to the number of notches 6, the transportation efficiency of the through hole 5 is higher. Combined with its position advantage, it can ensure that the silicon liquid is only transported through the through hole 5 during the continuous feeding stage, thereby reducing the contamination of the single crystal silicon by impurities and improving the quality of the single crystal silicon. The specific number of through holes 5 and notches 6 is related to the size of the crucible body 1 and the isolation tube 2. When the diameter of the crucible body 1 and the isolation tube 2 is large, the number of through holes 5 and notches 6 is relatively large to ensure the silicon liquid transportation efficiency; when the diameter of the crucible body 1 and the isolation tube 2 is small, the number of through holes 5 and notches 6 is relatively small to ensure the strength of the isolation tube 2.

[0049] In some embodiments, a slot 7 is provided at the bottom of the crucible body 1 , and the isolation tube 2 is fixed in the crucible body 1 by being snapped into the slot 7 .

[0050] In at least one embodiment, the slot 7 is a discontinuous structure with a fracture (not shown) arranged along the circumference, the notch 6 of the isolating cylinder 2 corresponds to the fracture 8 of the slot 7, and the silicon melt at the bottom of the feeding chamber 4 flows into the growth chamber 3 through the notch 6. The shape of the slot 7 is adapted to the shape of the isolating cylinder 2, for example, the slot 7 can be annular, in which case the slot 7 is a discontinuous annular structure with a fracture arranged around the circumference.

[0051] By setting the card slot 7, the spacing of the card slot 7 is adapted to the radial thickness of the isolation tube 2, so that the isolation tube 2 is fixed in the crucible body 1 by card connection, and the isolation tube 2 is prevented from sliding; and the crucible body 1 and the isolation tube 2 are fixed by card connection, and the two can be disassembled independently, so the two components of the crucible body 1 and the isolation tube 2 can be manufactured separately, reducing the difficulty of processing; at the same time, when any one of the body 1 and the isolation tube 2 is damaged, it can be replaced separately, which is beneficial to improve the overall life of the device and reduce production costs. By setting a fracture along the circumference of the card slot 7, the silicon liquid at the bottom of the feeding chamber 4 below the card slot 7 can flow from the fracture into the growth chamber 3, thereby solving the problem of silicon liquid retention.

[0052] The embodiment of the present application further provides a crucible assembly, comprising the above-mentioned quartz crucible for continuous Czochralski silicon single crystal pulling, and a graphite crucible sleeved on the outside of the quartz crucible for continuous Czochralski silicon single crystal pulling.

[0053] An embodiment of the present application also provides a single crystal furnace, comprising the above-mentioned crucible assembly.

[0054] As shown in Table 1, the corresponding effects of the quartz crucible of the present application and other crucibles are compared. It can be seen from the table that the present application arranges a through hole 5 on the isolation tube 2 and controls the height between the through hole 5, the upper edge of the crucible body 1, and the upper edge of the isolation tube 2. When the quartz crucible is used for continuous vertical pulling of single crystal silicon, the oxygen content is significantly reduced and the pulling wire breakage rate is low, and the application effect is good.

[0055] Table 1

[0056]

[0057] The present application is further described above with the aid of specific embodiments, but it should be understood that the specific description here should not be construed as limiting the essence and scope of the present application, and various modifications made to the above embodiments by ordinary technicians in this field after reading this specification are all within the scope of protection of this application.

Claims

1. A quartz crucible for continuous Czochralski silicon single crystal pulling, characterized in that: It comprises a crucible body, in which an isolation cylinder is movably arranged, and the isolation cylinder radially divides the crucible body into an inner growth chamber and an outer feeding chamber; A through hole is provided on the upper part of the side wall of the isolation cylinder, and the upper edge of the crucible body is higher than the through hole and lower than the upper edge of the isolation cylinder; a notch is provided on the bottom of the side wall of the isolation cylinder, and the growth chamber is connected with the feeding chamber through the through hole and the notch.

2. The quartz crucible for continuous Czochralski silicon single crystal pulling according to claim 1, characterized in that: The upper edge of the crucible body is 20-30 cm higher than the through hole; and / or the upper edge of the crucible body is 1-10 cm lower than the upper edge of the isolation tube.

3. The quartz crucible for continuous Czochralski silicon single crystal pulling according to claim 1, characterized in that: The through holes and the notches are evenly distributed along the circumference of the isolation cylinder.

4. The quartz crucible for continuous Czochralski silicon single crystal pulling according to claim 3, characterized in that: The through holes and the notches are staggered in distribution.

5. The quartz crucible for continuous Czochralski silicon single crystal pulling according to claim 1, characterized in that: The number of the through holes is greater than or equal to the number of the notches.

6. The quartz crucible for continuous Czochralski silicon single crystal pulling according to claim 1, characterized in that: The number of the through holes is 4-20, the number of the notches is 2-10, and the ratio of the number of the through holes to the number of the notches is (1-2):

1.

7. The quartz crucible for continuous Czochralski silicon single crystal pulling according to claim 1, characterized in that: The bottom of the crucible body is provided with a clamping groove, and the isolation cylinder is clamped and fixed in the crucible body through the clamping groove.

8. The quartz crucible for continuous Czochralski silicon single crystal pulling according to claim 7, characterized in that: The slot is a discontinuous structure with a fracture arranged along the circumferential direction, the gap of the isolation cylinder corresponds to the position of the fracture of the slot, and the silicon melt at the bottom of the feeding chamber flows into the growth chamber through the gap.

9. A crucible assembly, characterized in that: It comprises the quartz crucible for continuous Czochralski silicon single crystal as claimed in any one of claims 1 to 8, and a graphite crucible sleeved on the outside of the quartz crucible for continuous Czochralski silicon single crystal.

10. A single crystal furnace, characterized in that: The crucible assembly comprises the crucible assembly according to claim 9.

Images