Non-contact temperature detection device
By using a non-contact temperature detection device composed of linear flexible substrates and infrared receiving components inside the power electronic equipment, the continuity and all-roundness of internal temperature monitoring of power electronic equipment is solved, and low-cost temperature detection is achieved.
Patent Information
- Application Number
- CN202422431897.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-09
- Publication Date
- 2025-08-12
- Estimated Expiration
- 2034-10-09
AI Technical Summary
Existing temperature sensors can only conduct point-like testing, and cannot achieve continuous or surface-like temperature monitoring within power electronic equipment. Infrared imagers are limited in observation in narrow spaces, resulting in an increased risk of equipment failure or damage.
Multiple infrared receiving elements are arranged on a linear flexible substrate to form a continuous linear or surface infrared monitoring area, and temperature detection is performed through a circuit composed of infrared photoelectric switch tube and transistor, and infrared spectrum is received and signal amplified by inexpensive infrared photoelectric switch tube, and non-contact temperature monitoring is achieved by combining D/A conversion and comparator.
It realizes all-round and continuous temperature monitoring within power electronic equipment, avoids detection blind spots, reduces the risk of equipment failure, and is low in cost.
Smart Images

Figure CN223216987U_ABST
Abstract
Description
Technical Field
[0001] The utility model belongs to the field of electronics, and specifically relates to a non-contact temperature detection device. Background Art
[0002] Inverters, power supplies, etc., because the high temperature generated during operation may cause equipment failure or performance degradation, so real-time temperature monitoring is crucial.
[0003] When conducting full-system voltage and current tests on power electronic equipment, the enclosure must be completely closed, limiting space. Furthermore, power electronic products have numerous internal heat points and rapid temperature fluctuations. Existing monitoring methods typically use temperature sensors for temperature detection. However, in practice, only a few temperature sensors or monitoring points can be installed within a large area, limiting testing to point-by-point settings. Due to the limited number of temperature sensors and measurement points, temperature inspection instruments cannot accurately measure device temperatures across the board. This leads to significant problems such as delayed temperature sensor response, which can damage internal components on the equipment board or even cause the entire device to explode, leading to systemic damage. To mitigate the possibility of systemic damage, various factors have been considered, leading to solutions such as optimizing device performance and enhancing air or liquid cooling. However, these solutions do not fundamentally address the issue of effective and accurate device temperature control. Furthermore, for applications with a large number of heat points, existing technologies often use thermocouples or NTCs. However, using thermocouples or NTCs requires contact with the object being measured, which can lead to inconveniences in terms of electrical isolation and wiring routing.
[0004] Therefore, there is an urgent need to provide a non-contact temperature detection device that can achieve non-single-point, continuous measurement. Utility Model Content
[0005] In order to solve the problems in the existing technology that temperature probes can only measure single points and cannot continuously measure linear or surface areas, and that the observation space of infrared imagers is narrow, the utility model proposes a non-contact temperature detection device that can monitor linear or surface areas, as well as special-shaped objects, in real time in a non-contact manner during long-term operation of the equipment, without any blind spots.
[0006] The utility model adopts the following technical solutions:
[0007] A non-contact temperature detection device, comprising:
[0008] A linear flexible substrate is provided on the inner surface of a box of a power electronic device;
[0009] A plurality of infrared receiving elements are provided on the linear flexible substrate, and are used to receive infrared light generated by thermal radiation from core components of power electronic equipment in corresponding infrared monitoring areas and output electrical signals; the infrared monitoring areas corresponding to the plurality of infrared receiving elements form a continuous linear or planar shape;
[0010] The control circuit is connected to each infrared receiving element of the plurality of infrared receiving elements and is used to receive the electrical signal of each infrared receiving element.
[0011] Furthermore, the plurality of infrared receiving elements are arranged in a matrix.
[0012] Furthermore, the linear flexible substrate is annularly wound around the inner surface of the box to surround the core components of the power electronic device to be tested.
[0013] Furthermore, the linear flexible substrate is spirally wound around the inner surface of the box to surround the core components of the power electronic device to be tested.
[0014] Furthermore, the linear flexible substrate is a polyimide or polyester film substrate.
[0015] Furthermore, the infrared receiving element includes: an infrared photoelectric switch tube, a resistor R1, a transistor, a resistor R2, a resistor R3 and an operational amplifier circuit; one end of the infrared photoelectric switch tube is grounded, and the other end is connected to the base of the transistor via the resistor R1; the emitter of the transistor is grounded via the resistor R2; the collector of the transistor is connected to the power supply voltage via the resistor R3; and the emitter of the transistor is also connected to the operational amplifier circuit.
[0016] Furthermore, the operational amplifier circuit includes: a resistor R4, a resistor R5, a resistor R6 and an amplifier; the non-inverting input terminal of the amplifier is connected to the emitter of the transistor via the resistor R4; the inverting input terminal of the amplifier is grounded via the resistor R5, and is connected to the output terminal of the amplifier via the resistor R6.
[0017] Furthermore, the electrical signal output by the infrared receiving element is an analog voltage signal.
[0018] Furthermore, the control circuit includes multiple D / A converters and multiple comparators corresponding one-to-one to the multiple infrared receiving elements; the D / A converter is connected to the corresponding infrared receiving element, and is used to convert the analog voltage signal output by the corresponding infrared receiving element into a digital voltage signal and output it; the comparator is connected to the output end of the D / A converter, and is used to compare the digital voltage signal with a preset threshold voltage and output an over-temperature indication signal.
[0019] Furthermore, the plurality of infrared receiving elements are not in contact with core components of the power electronic equipment.
[0020] Compared with the prior art, this utility model has the following advantages:
[0021] 1. Use cheap infrared photoelectric switch tubes to make a linear detection board to receive infrared spectra. According to the light intensity and spectrum, a corresponding current is generated on the infrared photoelectric switch tube. After being amplified by the transistor and operational amplifier, the signal enters the control circuit to determine whether overtemperature occurs. This can realize the temperature monitoring of the core components inside the power electronic equipment box at a low cost.
[0022] 2. Using linear flexible substrate as the carrier of the detection element, it can be effectively installed and detected in a small space, on a curved surface, and at any angle. It has strong plasticity and is convenient for flexible application in various spaces, thus enabling multi-angle and spatial continuous monitoring inside power electronic products or high-power density boxes.
[0023] 3. By arranging multiple infrared photoelectric switch tubes in a matrix, the effective observation areas between adjacent infrared photoelectric switch tubes are overlapped on site, so that the final observation area forms a continuous line or surface, leaving no blind spot for observation. BRIEF DESCRIPTION OF THE DRAWINGS
[0024] Figure 1 It is a structural schematic diagram of the non-contact temperature detection device of the present utility model.
[0025] Figure 2 It is a schematic diagram of the detection range of the non-contact temperature detection device of the present utility model.
[0026] Description of reference numerals:
[0027] 1 is a linear flexible substrate;
[0028] H1 to Hn are the first infrared receiving element 1 to the nth infrared receiving element;
[0029] 2 is the control circuit;
[0030] 3 is an infrared photoelectric switch tube;
[0031] 4 is a triode;
[0032] 5 is an amplifier;
[0033] 6 is the infrared monitoring area;
[0034] R1 to R6 are first to sixth resistors. DETAILED DESCRIPTION
[0035] To make the purpose, technical solution, and advantages of the present invention more clear, the technical solution of the present invention will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present invention. The embodiments described in this application are only part of the embodiments of the present invention, not all of them. Based on the spirit of the present invention, other embodiments obtained by ordinary technicians in this field without making any creative efforts are all within the scope of protection of the present invention.
[0036] like Figures 1-2 In one embodiment, a non-contact temperature detection device of the present invention includes: a linear flexible substrate 1 , a plurality of infrared receiving elements H1 -Hn and a control circuit 2 .
[0037] The linear flexible substrate 1 is placed on the inner surface of the power electronic device's housing. The linear flexible substrate 1 is insulating, heat-resistant, and highly malleable, and can be bent into any desired angle, such as a 90° bend, curved surface, or irregular shape. To achieve these characteristics, the linear flexible substrate 1 is preferably a polyimide or polyester film substrate.
[0038] Multiple infrared receiving elements H1-Hn are disposed on the linear flexible substrate, configured to receive infrared light generated by thermal radiation from core components of power electronics within corresponding infrared detection areas and output electrical signals. The infrared monitoring area 6 corresponding to these multiple infrared receiving elements H1-Hn forms a continuous line or surface, ensuring detection without blind spots.
[0039] Preferably, to form a continuous linear or planar infrared monitoring area, the plurality of infrared receiving elements H1-Hn are arranged in a matrix. More preferably, the linear flexible substrate 1 is looped around the inner surface of the box to surround the core components of the power electronic device under test, thereby achieving all-round thermal monitoring of the core components of the power electronic device under test. Alternatively, the linear flexible substrate 1 can be spirally wrapped around the inner surface of the box to surround the core components of the power electronic device under test.
[0040] Furthermore, each of the infrared receiving elements H1 to Hn includes an infrared photoelectric switch tube 3 , a transistor 4 , a resistor R1 , a resistor R2 , a resistor R3 and an operational amplifier circuit.
[0041] Preferably, the transistor 4 is a pnp transistor; one end of the infrared photoelectric switch tube 3 is grounded GND, and the other end is connected to the base of the transistor 4 via a resistor R1. The emitter of the transistor 4 is connected to the ground GND via a resistor R2. The collector of the transistor 4 is connected to the power supply voltage Vcc via a resistor R3. The emitter of the transistor 4 is also connected to the operational amplifier circuit.
[0042] Furthermore, the operational amplifier circuit includes: a resistor R4, a resistor R5, a resistor R6, and an amplifier 5. The non-inverting input terminal of the amplifier 5 is connected to the emitter of the transistor 4 via the resistor R4. The inverting input terminal of the amplifier 5 is grounded GND via the resistor R5 and is connected to the output terminal of the amplifier 5 via the resistor R6.
[0043] Preferably, the electrical signals output by the infrared receiving elements H1 to Hn are analog voltage signals.
[0044] The control circuit 2 is connected to each infrared receiving element of the plurality of infrared receiving elements H1 -Hn, and is used to receive the electrical signal of each infrared receiving element.
[0045] Furthermore, the control circuit 2 includes a plurality of D / A converters and a plurality of comparators corresponding one-to-one to the plurality of infrared receiving elements H1 to Hn. The D / A converters are connected to the corresponding infrared receiving elements and are configured to convert the analog voltage signals output by the corresponding infrared receiving elements into digital voltage signals and output them. The comparators are connected to the output terminals of the D / A converters and are configured to compare the digital voltage signals with a preset threshold voltage and output an overtemperature indication signal.
[0046] Preferably, the plurality of infrared receiving elements are not in contact with the core components of the power electronic device. More preferably, the distance between the infrared receiving elements and the core components is preferably 1 to 10 cm.
[0047] The operating principle of the non-contact temperature detection device is as follows: When the core components of a power electronic device generate heat and generate thermal radiation, they emit infrared light. The infrared switching diodes H1-Hn attached to the linear flexible substrate 1 receive the infrared light signal, converting it into an electrical signal. This signal then generates a voltage and current pulse, connecting the test circuit. This pulse, passing through resistor R1, triggers the normal operation of the transistors. Depending on the magnitude of the voltage and current pulses, the information transmitted by the transistors' opening and closing varies. After amplification by the operational amplifier circuit, the analog voltage signal is transmitted to the control circuit for processing. This signal is used to locate the heating component and determine in real time whether the component is within the normal temperature range, ensuring the device's normal operation and stable output power. Because each infrared switching diode has a corresponding circular infrared monitoring area, and the infrared switching diodes on the linear flexible substrate are arranged in a matrix, the infrared monitoring areas of the multiple infrared switching diodes form a continuous line or surface, ensuring that there are no blind spots. Furthermore, the linear flexible substrate is easily bendable and can be wrapped around the inner surface of the housing in a ring or spiral to surround the core components of the power electronic device under test, thus enabling all-round thermal monitoring of the core components of the power electronic device.
[0048] The beneficial effect of the present invention is that, compared with the prior art,
[0049] 1. Infrared photoelectric switch tubes have excellent infrared information transmission and transmission capabilities. They are designed to meet the characteristics of small structure and volume, untimely data communication transmission, and low price. Using inexpensive infrared photoelectric switch tubes to receive infrared spectra, a corresponding current is generated on the infrared photoelectric switch tube according to the light intensity and spectrum. After being amplified by a transistor and an operational amplifier, the signal enters the control circuit to determine whether overtemperature has occurred, thereby enabling temperature monitoring of core components inside the power electronic equipment box at a low cost.
[0050] 2. Using a tough linear flexible substrate as the carrier of the detection element, it can be effectively installed and detected on any curved surface and at any angle in the narrow space of power electronic equipment. It has strong plasticity and is convenient for flexible application in various spaces, so that multi-angle and spatial continuous monitoring can be achieved inside power electronic products or high-power density boxes.
[0051] 3. By arranging multiple infrared photoelectric switch tubes in a matrix, the effective observation areas between adjacent infrared photoelectric switch tubes are overlapped on site, so that the final observation area forms a continuous line or surface, leaving no blind spot for observation.
[0052] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention rather than to limit it. Although the present invention has been described in detail with reference to the above embodiments, ordinary technicians in the relevant field should understand that the specific implementation methods of the present invention can still be modified or replaced by equivalents, and any modifications or equivalent replacements that do not depart from the spirit and scope of the present invention should be included in the scope of protection of the claims of the present invention.
Claims
1. A non-contact temperature detection device, characterized in that: include: A linear flexible substrate is provided on the inner surface of a box of a power electronic device; A plurality of infrared receiving elements are provided on the linear flexible substrate, and are used to receive infrared light generated by thermal radiation from core components of power electronic equipment in corresponding infrared monitoring areas and output electrical signals; the infrared monitoring areas corresponding to the plurality of infrared receiving elements form a continuous linear or planar shape; The control circuit is connected to each infrared receiving element of the plurality of infrared receiving elements and is used to receive the electrical signal of each infrared receiving element.
2. The non-contact temperature detection device according to claim 1, characterized in that: The plurality of infrared receiving elements are arranged in a matrix.
3. The non-contact temperature detection device according to claim 1, characterized in that: The linear flexible substrate is annularly wound around the inner surface of the box to surround the core components of the power electronic device to be tested.
4. The non-contact temperature detection device according to claim 1, characterized in that: The linear flexible substrate is spirally wound around the inner surface of the box to surround the core components of the power electronic device to be tested.
5. The non-contact temperature detection device according to claim 1, characterized in that: The linear flexible substrate is a polyimide or polyester film substrate.
6. The non-contact temperature detection device according to claim 1, characterized in that: The infrared receiving element includes: an infrared photoelectric switch tube, a resistor R1, a transistor, a resistor R2, a resistor R3 and an operational amplifier circuit; one end of the infrared photoelectric switch tube is grounded, and the other end is connected to the base of the transistor via the resistor R1; the emitter of the transistor is grounded via the resistor R2; the collector of the transistor is connected to the power supply voltage via the resistor R3; and the emitter of the transistor is also connected to the operational amplifier circuit.
7. The non-contact temperature detection device according to claim 6, characterized in that: The operational amplifier circuit includes: resistor R4, resistor R5, resistor R6 and an amplifier; the non-inverting input terminal of the amplifier is connected to the emitter of the transistor via resistor R4; the inverting input terminal of the amplifier is grounded via resistor R5 and connected to the output terminal of the amplifier via resistor R6.
8. The non-contact temperature detection device according to claim 1, characterized in that: The electric signal output by the infrared receiving element is an analog voltage signal.
9. The non-contact temperature detection device according to claim 8, characterized in that: The control circuit includes multiple D / A converters and multiple comparators corresponding one-to-one to the multiple infrared receiving elements; the D / A converters are connected to the corresponding infrared receiving elements, and are used to convert the analog voltage signals output by the corresponding infrared receiving elements into digital voltage signals and output them; the comparators are connected to the output ends of the D / A converters, and are used to compare the digital voltage signals with a preset threshold voltage and output an over-temperature indication signal.
10. The non-contact temperature detection device according to claim 1, characterized in that: The plurality of infrared receiving elements are not in contact with core components of the power electronic equipment.