Deposition apparatus

Abstract

The deposition apparatus includes: a deposition source that ejects a deposition substance toward a substrate through an ejection port; and an angle limiting plate having a polygonal cross-sectional shape defining a first region, a second region, and a third region, the first region being disposed at the periphery of the ejection port, limiting the ejection angle of the deposited material and having a first temperature, the second region intersecting the first region and having a second temperature different from the first temperature, and the third region having a third temperature different from the second temperature. A third region located between the first region and the second region and having a third temperature different from the first temperature and the second temperature, the angle limiting plate removing contaminants when repeatedly moving in the first region, the second region, and the third region by a rotation action; and a rotation driving device that rotates the angle limiting plate.

Description

TECHNICAL FIELD

[0001] The utility model relates to the deposition device including angle limiting board. More specifically, the utility model relates to the deposition device including angle limiting board and the cleaning method of deposition device. BACKGROUND

[0002] With the development of information technology, the importance of display devices as a connection medium between users and information is increasingly highlighted. As a result, the use of display devices such as liquid crystal display devices (LCD), organic light emitting display devices (OLED), plasma display devices (PDP), etc. is increasing.

[0003] For example, the manufacturing process of a display device can include a deposition process of depositing a deposition material onto a substrate. In order to define an area deposited onto a substrate at a predetermined angle, an angle limiting plate can be used. SUMMARY

[0004] TECHNICAL PROBLEM

[0005] An object of the utility model is to provide a deposition device including an angle limiting plate capable of in-situ cleaning.

[0006] Another object of the utility model is to provide a cleaning method of the deposition device.

[0007] However, the object of the utility model is not limited to the above-mentioned object, and various extensions can be made without departing from the concept and field of the utility model.

[0008] SOLUTION

[0009] In order to achieve the above-mentioned object of the utility model, the deposition device according to an embodiment of the utility model can include: a deposition source that sprays a deposition material toward a substrate through a spray port; an angle limiting plate having a polygonal cross-sectional shape defined with a first region, a second region, and a third region, the first region being arranged at a periphery of the spray port to limit a spray angle of the deposition material and having a first temperature, the second region intersecting the first region and having a second temperature different from the first temperature, the third region being located between the first region and the second region and having a third temperature different from the first temperature and the second temperature, the angle limiting plate removing contaminants when repeatedly moving in the first region, the second region, and the third region through a rotational motion; and a rotational driving device that rotates the angle limiting plate.

[0010] In an embodiment, the deposition apparatus can further include a heating device that heats the second region of the angle-limiting plate.

[0011] In an embodiment, the heating device can be an induction heating device including an induction coil.

[0012] In an embodiment, the induction heating device can further include a cooling pipe disposed apart from the induction coil, and cooling water that flows inside the cooling pipe prevents the induction coil from being heated.

[0013] In an embodiment, the heating device can provide heat to the second region above a vaporization / sublimation temperature of the deposition material.

[0014] In an embodiment, the second temperature can be greater than the first temperature and the third temperature.

[0015] In an embodiment, the deposition apparatus can further include a cooling device. The cooling device can be disposed above the third region of the angle-limiting plate and cool the third region.

[0016] In an embodiment, the third temperature can be less than the first temperature and the second temperature.

[0017] In an embodiment, the angle-limiting plate can include steel use stainless (SUS).

[0018] In an embodiment, the deposition material can include a light emitting material.

[0019] To achieve the aforementioned other object of the present disclosure, a cleaning method of a deposition apparatus according to an embodiment of the present disclosure can include a step of preparing an angle-limiting plate having a polygonal cross-sectional shape in which a first region, a second region, and a third region are defined, the first region being disposed at a periphery of an injection port that injects a deposition material toward a substrate to limit an injection angle of the deposition material and having a first temperature, the second region intersecting the first region and being processed to have a second temperature different from the first temperature, the third region being located between the first region and the second region and being processed to have a third temperature different from the first temperature and the second temperature, and a step of removing a contaminant in-situ when the angle-limiting plate repeatedly moves in the first region, the second region, and the third region by a rotational motion.

[0020] In an embodiment, the second region can be inductively heated.

[0021] In one embodiment, the second region can be heated with heat above a vaporization / sublimation temperature of the deposited substance.

[0022] In one embodiment, the second temperature can be greater than the first temperature and the third temperature.

[0023] In one embodiment, the third region can be cooled.

[0024] In one embodiment, the third temperature can be less than the first temperature and the second temperature.

[0025] In one embodiment, the angle-limiting plate can be formed of stainless steel (SUS).

[0026] In one embodiment, the step of removing the contaminants on the angle-limiting plate in situ can include a step of accumulating a predetermined amount or more of contaminants on the angle-limiting plate in the first region; a step of rotating the angle-limiting plate by a predetermined angle; a step of heating the second region; a step of rotating the angle-limiting plate by a predetermined angle; a step of cooling the third region; and a step of rotating the angle-limiting plate by a predetermined angle.

[0027] In one embodiment, the step of heating the second region can include a step of moving a heating device so as to bring the heating device adjacent to the second region of the angle-limiting plate; a step of the heating device heating the second region of the angle-limiting plate; and a step of moving the heating device so as to separate the heating device from the angle-limiting plate.

[0028] In one embodiment, the step of cooling the third region can include a step of moving a cooling device so as to bring the cooling device adjacent to the third region of the angle-limiting plate; a step of the cooling device cooling the third region of the angle-limiting plate; and a step of moving the cooling device so as to separate the cooling device from the angle-limiting plate.

[0029] Advantageous Effects

[0030] The deposition apparatus according to an embodiment of the present application can include: a deposition source that sprays a deposition material toward a substrate through a spray port; an angle limiting plate having a polygonal cross-sectional shape defined with a first region, a second region, and a third region, the first region being arranged at a periphery of the spray port to limit a spray angle of the deposition material and having a first temperature, the second region intersecting the first region and having a second temperature different from the first temperature, the third region being located between the first region and the second region and having a third temperature different from the first temperature and the second temperature, the angle limiting plate removing contaminants while repeatedly moving in the first region, the second region, and the third region through a rotational motion; and a rotational driving device that rotates the angle limiting plate. With the in-situ cleaning of the angle limiting plate, the contaminants can be prevented from accumulating on the angle limiting plate, and a continuous operation period of the deposition source can be increased.

[0031] However, the effects of the present application are not limited to the aforementioned effects, and various extensions can be made without departing from the spirit and scope of the present application. BRIEF DESCRIPTION OF DRAWINGS

[0032] Figure 1 is a view for explaining a deposition apparatus according to an embodiment of the present application.

[0033] Figure 2 is Figure 1 an enlarged view of A portion of

[0034] Figure 3 is a view for explaining a path of a deposition material.

[0035] Figure 4 is Figure 2 an enlarged view of B portion of

[0036] Figure 5 , Figure 6 , Figure 7 , Figure 8 , Figure 9 , Figure 10 , Figure 11 , Figure 12 , Figure 13 and Figure 14 are views for explaining a cleaning method of a deposition apparatus using a deposition apparatus according to an embodiment of the present application.

[0037] Figure 15 is a sectional view showing a sub-pixel on which a deposition process is completed using a deposition apparatus according to an embodiment of the present application.

[0038] BRIEF DESCRIPTION OF DRAWINGS

[0039] EH: spray port BS: substrate

[0040] DM: deposition material S1: first region

[0041] S2: second region S3: third region

[0042] AS: angle limiting plate DUS: contaminant

[0043] DD1: first driving device IH: heating device

[0044] CO: induction coil CL: cooling pipe

[0045] CP: cooling device DETAILED DESCRIPTION

[0046] Hereinafter, embodiments of the present application will be described in greater detail with reference to the accompanying drawings. Like reference numerals refer to like elements throughout the drawings and repeated description of like elements will be omitted.

[0047] Figure 1 is a view for explaining a deposition apparatus according to an embodiment of the present application.

[0048] Referring to Figure 1 , the deposition apparatus 1 can include a deposition chamber CH and a deposition source DS disposed within the deposition chamber CH.

[0049] For example, at least one deposition source DS can be disposed within the deposition chamber CH. The deposition chamber CH can be maintained in a vacuum state during a deposition process. To this end, if a substrate BS is introduced into the inside of the deposition chamber CH through an inlet IN, the deposition chamber CH can be sealed. On the other hand, after the deposition process is completed, the vacuum state can be released, and the substrate BS on which the deposition process is completed can be discharged to the outside of the deposition chamber CH through an outlet OUT. For example, the substrate BS can be transferred by a roller and an electrostatic chuck. However, the present application is not limited thereto.

[0050] In an embodiment, the deposition source DS can spray the deposition material DM toward the substrate BS through a spray port (for example, a spray port EH of Figure 3 ).

[0051] For example, the deposition source DS can include a crucible, a heater, and a nozzle in which the spray port EH is defined. For example, the crucible can accommodate the deposition material DM. The heater can apply heat to the deposition material DM accommodated in the crucible to vaporize / sublimate the deposition material DM. The nozzle can spray the vaporized / sublimated deposition material DM toward the substrate BS through the spray port EH.

[0052] For example, the deposition sources DS can include a first deposition source DS1, a second deposition source DS2, and a third deposition source DS3. For example, the deposition materials DM can include a first deposition material DM1, a second deposition material DM2, and a third deposition material DM3.

[0053] For example, the first deposition source DS1 can eject the first deposition material DM1 toward the first substrate BS1 through an ejection port (for example, an ejection port EH) of the first deposition source DS1. The second deposition source DS2 can eject the second deposition material DM2 toward the second substrate BS2 through the ejection port. The third deposition source DS3 can eject the third deposition material DM3 toward the third substrate BS3 through the ejection port. Figure 3

[0054] In one embodiment, the deposition material DM can include a light emitting material. As an example, the light emitting material can include an organic material. As another example, the light emitting material can include an inorganic material. However, the present application is not limited thereto.

[0055] For example, the first deposition material DM1 ejected from the first deposition source DS1 can include a red light emitting material. The second deposition material DM2 ejected from the second deposition source DS2 can include a green light emitting material. The third deposition material DM3 ejected from the third deposition source DS3 can include a blue light emitting material. However, the present application is not limited thereto.

[0056] For example, the substrates BS can be arranged in a plurality within the deposition chamber CH. For example, the substrates BS can include a first substrate BS1, a second substrate BS2, and a third substrate BS3. The deposition process can be sequentially performed on the first substrate BS1, the second substrate BS2, and the third substrate BS3. On the third substrate BS3, the third deposition material DM3 can be deposited in a state in which the first deposition material DM1 and the second deposition material DM2 are deposited. On the second substrate BS2, the second deposition material DM2 can be deposited in a state in which the first deposition material DM1 is deposited. On the first substrate BS1, the first deposition material DM1 can be deposited. However, the present application is not limited thereto.

[0057] Figure 1 The above-described embodiments are exemplary cases, and the present application is not limited thereto. For example, the deposition apparatus 1 can further include additional constituent elements, or can omit or change a part of the constituent elements.

[0058] For example, the substrates BS can be arranged in one within the deposition chamber CH.

[0059] As another example, the deposition chamber CH can further include an anti-adhesion plate or the like. For example, after the deposition process is performed, the anti-adhesion plate can adsorb and remove a residue of the deposition material DM. To this end, the anti-adhesion plate can be arranged inside the deposition chamber CH.​

[0060] Figure 2 is Figure 1 a magnified view of part A. Figure 3 is a diagram for illustrating a path of a deposition material.

[0061] With reference to Figure 1 , Figure 2 and Figure 3 , the deposition apparatus 1 can include a deposition source DS, a substrate BS, a mask MS, an angle limiting plate AS, a heating device IH, a cooling device CP, a first driving device DD1, a second driving device DD2, and a third driving device DD3 arranged within a deposition chamber CH.

[0062] A deposition process of a second substrate BS2 using a second deposition source DS2 and a deposition process of a third substrate BS3 using a third deposition source DS3 can be substantially the same / similar to a deposition process of a first substrate BS1 using a first deposition source DS1. Therefore, for convenience of explanation, hereinafter, the explanation will be centered on the first deposition source DS1 and the first substrate BS1.

[0063] In an embodiment, the deposition source DS can spray the deposition material DM toward the substrate BS through a spray port EH. For example, the first deposition source DS1 can spray the first deposition material DM1 toward the first substrate BS1 through the spray port EH.

[0064] The mask MS can include a mask frame MF. The mask MS can have a structure in which at least one hole HO is defined in the mask frame MF. The mask MS can be located between the deposition source DS and the substrate BS. For example, as shown in Figure 3 , the first deposition material DM1 passing through the hole HO can form the first sub-pixel SP1. In forming the second sub-pixel SP2, a mask in which a hole is formed at a position overlapping the second sub-pixel SP2 can be used. The second deposition material DM2 passing through the hole can form the second sub-pixel SP2. In forming the third sub-pixel SP3, a mask in which a hole is formed at a position overlapping the third sub-pixel SP3 can be used. The third deposition material DM3 passing through the hole can form the third sub-pixel SP3.

[0065] In an embodiment, the angle limiting plate AS can be arranged around the spray port EH to limit the spray angle of the deposition material DM.

[0066] In an embodiment, the cross-sectional shape of the angle restriction plate AS can have a polygonal shape. For example, when the cross-sectional shape of the angle restriction plate AS has a triangular shape, the cross-section can include a first side, a second side, and a third side. For example, as a rotational motion of the angle restriction plate AS, the first side, the second side, and the third side can sequentially restrict the ejection angle of the deposition material DM.

[0067] In an embodiment, the angle restriction plate AS can include SUS (stainless steel). However, the present application is not limited thereto.

[0068] A detailed description regarding the angle restriction plate AS will be described later. Figure 4 A detailed description regarding the angle restriction plate AS will be described later.

[0069] For example, the deposition material DM can be vaporized / sublimated by heating of the deposition source DS. Through the heating, the temperature of the deposition source DS can be greater than the temperature of the angle restriction plate AS.

[0070] Accordingly, the deposition material DM vaporized / sublimated in the deposition source DS can be liquefied / solidified on the angle restriction plate AS which has a relatively small temperature. The deposition material DM (hereinafter, for convenience of explanation, referred to as "contamination") liquefied / solidified on the angle restriction plate AS can change a film forming angle, and if the contamination falls to the deposition source DS, can clog the ejection port EH.

[0071] A first driving device DD1 can be disposed in the angle restriction plate AS. In an embodiment, the first driving device DD1 can be a rotational driving device which rotates the angle restriction plate AS. The rotational driving device can be used without limitation as long as it is a device which can rotate the angle restriction plate AS by 360 degrees.

[0072] In an embodiment, the heating device IH can heat a partial region of the angle restriction plate AS. For example, the heating device IH can be disposed adjacent to a second region (for example, a second region S2) of the angle restriction plate AS, and the heating device IH can heat the second region. Figure 4

[0073] For example, a second driving device DD2 can be disposed in the heating device IH. For example, the second driving device DD2 can be a linear driving device. The second driving device DD2 can dispose the heating device IH close to or away from the angle restriction plate AS. The linear driving device can be used without limitation as long as it is a device which can linearly move the heating device IH.

[0074] A detailed description regarding the heating device IH will be described later. Figure 4 A detailed description regarding the heating device IH will be described later.

[0075] ​In an embodiment, the cooling device CP can be arranged above the third region (e.g., the third region S3) of the angle limiting plate AS. Thereby, the cooling device CP can cool the third region. Figure 4

[0076] In an embodiment, a first temperature of the first region (e.g., the first region S1), a second temperature of the second region, and a third temperature of the third region can be different from each other. In an embodiment, as the second region is heated, the second temperature can be greater than the first temperature and the third temperature. On the other hand, in an embodiment, as the third region is cooled, the third temperature can be less than the first temperature and the second temperature. However, the present application is not limited thereto. Figure 4

[0077] For example, a third driving device DD3 can be arranged in the cooling device CP. For example, the third driving device DD3 can be a linear driving device. The third driving device DD3 can arrange the cooling device CP to be close to the angle limiting plate AS or to be away from the angle limiting plate AS. The linear driving device can be used without limitation as long as it is a device capable of linearly moving the cooling device CP. Details regarding the cooling device CP will be described later with reference to Figure 4

[0078] The deposition device 1 can form a plurality of pixels PX on the substrate BS through the deposition process. For example, each of the plurality of pixels PX can include a first sub-pixel SP1, a second sub-pixel SP2, and a third sub-pixel SP3. For example, the first sub-pixel SP1 can emit red light. The second sub-pixel SP2 can emit green light. The third sub-pixel SP3 can emit blue light. However, the present application is not limited thereto.

[0079] Figure 4 is an enlarged view of the B portion of Figure 2

[0080] Hereinafter, the angle limiting plate AS capable of in-situ cleaning will be described in detail. Figure 4

[0081] Referring to Figure 4 , in an embodiment, the angle limiting plate AS capable of the in-situ cleaning can have a polygonal cross-sectional shape. The angle limiting plate AS can be defined with a first region S1, a second region S2, and a third region S3.

[0082] ​​​​​In one embodiment, the first region S1 may be arranged around the nozzle EH to limit the spray angle of the deposited material (e.g., the first deposited material DM1). For example, the deposited material sprayed radially from a deposition source (e.g., the first deposition source DS1) may collide with a portion of the angle limiting plate AS (e.g., the first region S1) and block the flow. In this case, the deposited material can be prevented from being ejected from the substrate (e.g., Figure 1 The deposited material is wasted in the area of ​​the substrate (BS).

[0083] In one embodiment, the second region S2 may be a region that intersects with the first region S1 and is processed to have a second temperature that is different from the first temperature of the first region S1.

[0084] In one embodiment, the second region S2 can be heated by the heating device IH. This prevents the accumulation of contaminants on the second region S2. In one embodiment, the heating device IH can provide heat to the second region S2 above the vaporization / sublimation temperature of the contaminants. This allows the contaminants to be removed from the angle limiting plate AS.

[0085] When the contaminant is present in the second region S2, the contaminant can be vaporized / sublimated at a temperature above the vaporization / sublimation temperature and removed from the angle limiting plate AS. Therefore, a separate cleaning process for removing the contaminant from the angle limiting plate AS can be omitted.

[0086] For example, the contaminants vaporized / sublimated from the angle limiting plate AS can be removed from the deposition chamber (e.g., by means of the anti-adhesion plate). Figure 1 The contaminants (CH) are removed from the deposition chamber. However, this invention is not limited thereto. The contaminants vaporized / sublimated from the angle limiting plate AS can be removed from the deposition chamber in various ways.

[0087] like Figure 3 and Figure 4 As shown, in one embodiment, the heating device IH can be an induction heating device. In one embodiment, the induction heating device may include a frame FR, an induction coil CO, and a cooling pipe CL.

[0088] For example, the frame FR can provide space to fix the induction coil CO and the cooling pipe CL.

[0089] In one embodiment, the induction coil CO can generate heat to heat at least a portion of the angle limiting plate AS (e.g., the second region S2).

[0090] In an embodiment, the cooling pipe CL can be disposed to be spaced apart from the induction coil CO. Cooling water that prevents the induction coil CO from being heated can flow inside the cooling pipe CL. The cooling water can remove heat generated in the induction coil CO while flowing through the cooling pipe CL.

[0091] For example, as the deposition process is performed, the amount of the deposition material liquefied / solidified onto the first region S1 (i.e., the amount of the contaminant) can increase. As previously described, when the contaminant is not removed, the film formation angle can change, and if the contaminant falls onto the deposition source DS, the ejection port (e.g., the ejection port EH of the deposition apparatus 1) can be clogged. Thus, cleaning to remove the contaminant needs to be periodically performed. Figure 3

[0092] In the case of the deposition apparatus according to the comparative example, after the deposition process is performed, the angle limiting plate is separated and the cleaning process is performed. In this case, since a long time is consumed for cleaning such as the time for separating the angle limiting plate, the time for cleaning the angle limiting plate, and the time for resetting the angle limiting plate, and since the angle limiting plate is disassembled and reset, it is inconvenient.

[0093] However, in the case of the deposition apparatus (e.g., the deposition apparatus 1) according to an embodiment of the present disclosure, the in-situ cleaning can be performed in the second region S2. Thereby, the accumulation of the contaminant on the angle limiting plate AS can be prevented, and the continuous operation period of the deposition source DS can be increased. Figure 1

[0094] In an embodiment, the third region S3 can be located between the first region S1 and the second region S2.

[0095] In an embodiment, the third region S3 can be adjacent to the cooling device CP. For example, the cooling device CP can be a plate-shaped cooling plate. However, the present disclosure is not limited thereto. For example, the cooling device CP can be used without limitation as long as it is a device capable of cooling at least a portion (e.g., the third region S3) of the angle limiting plate AS.

[0096] As previously described, as the third region S3 is cooled by the cooling device CP, in an embodiment, the third temperature of the third region S3 can be different from the first temperature of the first region S1 and the second temperature of the second region S2. In an embodiment, the third temperature of the third region S3 can be less than the first temperature of the first region S1 and the second temperature of the second region S2.

[0097] When the angle limiting plate AS is rotated immediately after heating is performed in the first region S1 and the physical cleaning is performed in the second region S2, the substrate (e.g., the substrate W) can be rotated while being heated. Thus, the substrate W can be damaged. Figure 1 ​​The substrate BS) can be damaged by heat. To prevent such a phenomenon, the cleaning method of the deposition apparatus according to an embodiment of the present application can cool a portion of the angle-limiting plate AS in the third region S3.

[0098] In the case of the deposition apparatus 1 according to an embodiment of the present application (for example, Figure 1 In the case of the deposition apparatus 1 according to an embodiment of the present application (for example,

[0099] For example, when the angle-limiting plate AS has the triangular shape, the angle-limiting plate AS can be rotated by about 60 degrees. Thereby, the heating, the physical cleaning, and the cooling can be sequentially performed in the first region S1, the second region S2, and the third region S3.

[0100] In the above, it is explained that the angle-limiting plate AS has the triangular shape, but the present application is not limited thereto. For example, the angle-limiting plate AS can have various polygonal shapes, thereby can include various faces, and can be rotated at various rotation angles.

[0101] For example, the angle-limiting plate AS can have a rectangular shape. For example, the angle-limiting plate AS can include a first face, a second face, a third face, and a fourth face. For example, the first face and the third face can be parallel to each other, and the second face and the fourth face can connect the first face and the third face.

[0102] For example, the angle-limiting plate AS can be rotated if a predetermined amount or more of the deposition substance (i.e., the contaminant) is deposited on the first face while the first face is heated. For example, the angle-limiting plate AS can be rotated by about 90 degrees. Thereby, the second face can be located in the first region S1.

[0103] For example, the angle-limiting plate AS can be rotated once more if a predetermined amount or more of the deposition substance (i.e., the contaminant) is deposited on the second face while the second face is heated. For example, the angle-limiting plate AS can be rotated by about 90 degrees. Thereby, the third face can be located in the first region S1.

[0104] Through the rotation action, the first face and the second face can be sequentially subjected to the physical cleaning in the second region S2 and then subjected to the cooling in the third region S3. In this case, since the deposition process can be performed on the first face and the second face, the period of the in-situ cleaning can become longer.

[0105] As another example, the angle restriction plate AS can have a hexagonal shape. For example, the angle restriction plate AS can include a first face, a second face, a third face, a fourth face, a fifth face, and a sixth face. For example, the first face and the fourth face can be parallel to each other, the second face and the fifth face can be parallel to each other, the third face and the sixth face can be parallel to each other, and the first face, the second face, the third face, the fourth face, the fifth face, and the sixth face can be sequentially connected.

[0106] For example, the angle restriction plate AS can repeat the heating, the physical cleaning, and the cooling while rotating approximately 60 degrees each time.

[0107] As another example, the angle restriction plate AS can repeat the heating, the heating, the physical cleaning, the physical cleaning, the cooling, and the cooling while rotating approximately 60 degrees each time.

[0108] For example, when the physical cleaning is performed twice, a fast and rough cleaning can be performed in the first cleaning, and a fine cleaning can be performed only on a portion in which the contaminants remain in the second cleaning.

[0109] As another example, when the cooling is performed twice, a temperature can be lowered once in the first cooling, and a temperature can be lowered twice in the second cooling. Thereby, deformation, damage, or the like of the angle restriction plate AS due to a sharp cooling can be prevented.

[0110] However, the present application is not limited thereto. The shape of the angle restriction plate AS, the rotation angle, the role (deposition, cleaning, cooling) of each face, or the like can be variously changed.

[0111] As described above, the deposition apparatus 1 including the angle restriction plate AS can prevent the contaminants from being accumulated on the angle restriction plate AS to increase the continuous operation time of the deposition source DS, and can vaporize / sublimate the contaminants in the second region S2 to prevent or remove the accumulation of the contaminants, and can increase the productivity and the maintenance management efficiency (e.g., time, manpower, cost, or the like), and can prevent the change of the film formation angle to improve the deposition quality (e.g., uniformity, thickness, area, or the like).

[0112] Figure 5 、 Figure 6 、 Figure 7 、 Figure 8 、 Figure 9 、 Figure 10 、 Figure 11 、 Figure 12 、 Figure 13 and Figure 14is a diagram for explaining a cleaning method of a deposition apparatus performed using a deposition apparatus according to an embodiment of the present application.

[0113] Hereinafter, explanations which are repeated with the foregoing explanations regarding the deposition apparatus 1 will be omitted or simplified. Figure 1 、 Figure 2 、 Figure 3 and Figure 4

[0114] Referring to Figure 5 , in an embodiment, an angle restriction plate AS can be prepared (S100). For example, the angle restriction plate AS can be arranged inside a deposition chamber (e.g., the deposition chamber CH of Figure 1 ) such that the angle restriction plate AS is located between a deposition source DS and a substrate BS.

[0115] In an embodiment, the angle restriction plate AS can be formed of SUS. However, the present application is not limited thereto.

[0116] The angle restriction plate AS can be arranged at a periphery of an ejection port EH which ejects a deposition material (e.g., a first deposition material DM1) toward a substrate (e.g., the substrate BS of Figure 1 ). The angle restriction plate AS can have a polygonal cross-sectional shape. The angle restriction plate AS can be defined with a first region S1 which restricts an ejection angle of the deposition material and has a first temperature, a second region S2 which intersects the first region S1 and is processed to have a second temperature which is different from the first temperature, and a third region S3 which is located between the first region S1 and the second region S2 and is processed to have a third temperature which is different from the first temperature and the second temperature.

[0117] In an embodiment, the angle restriction plate AS can perform the in-situ cleaning when repeatedly moving in the first region S1, the second region S2, and the third region S3 by a rotation action. Thereby, the deposition material (i.e., the contaminant DUS) on the angle restriction plate AS can be removed in-situ without disassembling the angle restriction plate AS (S210 to S400). The in-situ cleaning performed by the rotation action will be described in detail later with reference to Figure 6 .

[0118] Referring to Figure 6 ​In an embodiment, the angle limiting plate AS can be rotated at a predetermined angle (S210) if the amount of the contaminants DUS is accumulated on the angle limiting plate AS by more than a predetermined amount in the first area S1. The rotation action can be adjusted by various methods, for example, when a set time is exceeded, when a reference value is exceeded by sensing the amount of the contaminants DUS, etc. Further, the rotation action can be automatically performed according to a pre-set signal, or can be performed when a control signal is input.

[0119] Referring to Figure 7 , Figure 8 and Figure 9 In an embodiment, the second area S2 can be heated. In an embodiment, the second area S2 can be inductively heated (S220, S230 and S240). In an embodiment, the inductive heating can be performed by a heating device IH disposed adjacent to the second area S2 of the angle limiting plate AS.

[0120] The temperature of the angle limiting plate AS can be less than the temperature of the deposition source (e.g., the first deposition source DS1) heated by the heater. Thereby, the deposition material (e.g., the first deposition material DM1) vaporized / sublimated from the deposition source can be accumulated on the angle limiting plate AS (e.g., the first area S1).

[0121] As the angle limiting plate AS is rotated and heated in the second area S2, the deposition material (i.e., the contaminants DUS) on the angle limiting plate AS can be removed. To this end, in an embodiment, the second area S2 can be heated with heat above the vaporization / sublimation temperature of the deposition material. Thereby, as previously described, in an embodiment, the second temperature can be greater than the first temperature and the third temperature.

[0122] The heating can be performed, for example, by the heating device IH. The heating device IH can be disposed adjacent to the second area S2 of the angle limiting plate AS. For example, the heating device IH can be positioned not to interfere with the angle limiting plate AS while the angle limiting plate AS is rotated. In an embodiment, to perform the heating, the heating device IH can be linearly moved to be adjacent to the angle limiting plate AS (refer to S220). To this end, a second driving device DD2 can be disposed in the heating device IH.

[0123] As previously described, in an embodiment, the second area S2 can be heated by the heating device IH to have the second temperature, and each of the first area S1 and the third area S3 can have a temperature less than the second temperature (refer to S230).

[0124] Referring to Figure 9In an embodiment, the heating device IH can be moved to be spaced apart from the angle restriction plate AS. That is, the heating device IH can be linearly moved to a position not interfering with the angle restriction plate AS (see S240).

[0125] Referring to Figure 10 After the heating is completed, in an embodiment, the angle restriction plate AS can be rotated at a predetermined angle (S310).

[0126] Referring to Figure 11 and Figure 12 In an embodiment, a portion of the angle restriction plate AS on which the heating is completed can be cooled (S320, S330, and S340). For example, the third region S3 of the angle restriction plate AS can be cooled.

[0127] When the angle restriction plate AS is rotated immediately after the heating is performed in the second region S2, the substrate (for example, the substrate BS) can be thermally damaged. To prevent such a phenomenon, the cleaning method of the deposition apparatus according to an embodiment of the present application can cool a portion of the angle restriction plate AS in the third region S3. Figure 1

[0128] For example, the cooling can be performed using a cooling device CP. The cooling device CP can be disposed adjacent to the third region S3 of the angle restriction plate AS. For example, the cooling device CP can be located at a position not interfering with the angle restriction plate AS when the angle restriction plate AS is rotated. In an embodiment, to perform the cooling, the cooling device CP can be linearly moved to be adjacent to the angle restriction plate AS (see S320).

[0129] As described before, in an embodiment, the third region S3 can be cooled by the cooling device CP to have the third temperature, and each of the first region S1 and the second region S2 can have a temperature greater than the third temperature (see S330).

[0130] Referring to Figure 13 In an embodiment, the cooling device CP can be moved to be spaced apart from the angle restriction plate AS. That is, the cooling device CP can be linearly moved to a position not interfering with the angle restriction plate AS (see S340).

[0131] Referring to Figure 14 After the cooling is completed, in an embodiment, the angle restriction plate AS can be rotated (S400).

[0132] ​As explained above, the angle restriction plate AS can perform the in-situ cleaning while repeatedly moving in the first area S1, the second area S2, and the third area S3 by the rotating action. Thereby, the deposited substance (i.e., the contaminant DUS) on the angle restriction plate AS can be removed in-situ without disassembling the angle restriction plate AS (S210 to S400).

[0133] Figure 15 is a cross-sectional view illustrating a sub-pixel on which a deposition process is completed using a deposition apparatus according to an embodiment of the present application.

[0134] Referring to Figure 15 , the sub-pixel can include a substrate BS, a buffer layer BFR, a transistor TR, a gate insulating layer GI, an interlayer insulating layer ILD, a via insulating layer VIA, a light emitting element EL, and a pixel definition layer PDL.

[0135] The transistor TR can include an active layer ACT, a gate electrode GE, a source electrode SE, and a drain electrode DE. The light emitting element EL can include a first electrode AE, a light emitting layer EML, and a second electrode CAE.

[0136] The substrate BS can include glass, quartz, plastic, or the like. For example, the substrate BS can have a flexible, bendable, or rollable characteristic.

[0137] The buffer layer BFR can be disposed on the substrate BS. The buffer layer BFR can include an inorganic insulating substance. For example, the buffer layer BFR can include silicon oxide, silicon nitride, silicon oxynitride, or the like. The buffer layer BFR can function to block the impurities to prevent the active layer ACT of the transistor TR from being damaged by the impurities diffused from the substrate BS.

[0138] The active layer ACT can be disposed on the buffer layer BFR. For example, the active layer ACT can include a silicon semiconductor substance. For example, the active layer ACT can include amorphous silicon, polysilicon, or the like. As another example, the active layer ACT can include an oxide semiconductor substance. For example, the active layer ACT can include zinc oxide, zinc-tin oxide, zinc-indium oxide, indium oxide, titanium oxide, indium-gallium-zinc oxide, indium-zinc-tin oxide, or the like.

[0139] The gate insulating layer GI can be disposed on the active layer ACT. The gate insulating layer GI can include an inorganic insulating substance. For example, the gate insulating layer GI can include silicon oxide, silicon nitride, silicon oxynitride, titanium oxide, tantalum oxide, or the like. The gate insulating layer GI can function to electrically insulate the active layer ACT and the gate electrode GE from each other.

[0140] The gate electrode GE can be disposed on the gate insulating layer GI. The gate electrode GE can include an electrically conductive substance. For example, the gate electrode GE can include a metal, an alloy, an electrically conductive metal oxide, a transparent conductive substance, or the like. A gate signal can be applied to the gate electrode GE. The gate signal can adjust the electrical conductivity of the active layer ACT by turning on / off the transistor TR.

[0141] The interlayer insulating layer ILD can be disposed on the gate electrode GE. The interlayer insulating layer ILD can include an organic insulating substance and / or an inorganic insulating substance. The interlayer insulating layer ILD can function to electrically insulate the source electrode SE and the drain electrode DE from the gate electrode GE.

[0142] The source electrode SE and the drain electrode DE can be disposed on the interlayer insulating layer ILD. Each of the source electrode SE and the drain electrode DE can include an electrically conductive substance. For example, each of the source electrode SE and the drain electrode DE can include a metal, an alloy, an electrically conductive metal oxide, a transparent conductive substance, or the like. Each of the source electrode SE and the drain electrode DE can be in electrical contact with the active layer ACT through a contact hole that penetrates the interlayer insulating layer ILD and the gate insulating layer GI.

[0143] The via insulating layer VIA can be disposed on the source electrode SE and the drain electrode DE. The via insulating layer VIA can include an organic insulating substance. For example, the via insulating layer VIA can include a polyacrylic resin, a polyimide resin, an acrylic resin, or the like. Accordingly, an upper surface of the via insulating layer VIA can be substantially flat.

[0144] The first electrode AE can be disposed on the via insulating layer VIA. The first electrode AE can include an electrically conductive substance. For example, the first electrode AE can include a metal, an alloy, an electrically conductive metal oxide, a transparent conductive substance, or the like. The first electrode AE can be in electrical contact with the source electrode SE or the drain electrode DE through a contact hole that penetrates the via insulating layer VIA.

[0145] The pixel defining film PDL can be disposed on the first electrode AE. The pixel defining film PDL can include an organic insulating substance. For example, the pixel defining film PDL can include a polyacrylic compound, a polyimide compound, or the like. The pixel defining film PDL can divide a light emitting area of each of the plurality of pixels. To this end, the pixel defining film PDL can define a pixel opening exposing the first electrode AE.

[0146] The light emitting layer EML can be disposed on the first electrode AE within the pixel opening. The light emitting layer EML can include an organic light emitting substance. For example, the light emitting layer EML can have a multi-layer structure including various functional layers. For example, the light emitting layer EML can further include at least one of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer.

[0147] The second electrode CAE can be disposed on the light emitting layer EML and can cover the pixel defining film PDL.

[0148] In an embodiment, the deposition substance can be deposited on the first electrode AE to form the light emitting layer EML. In other words, the light emitting layer EML can be formed by the deposition apparatus (for example, the deposition apparatus 1 of Figure 1 FIG. 1).

[0149] However, the present application is not limited thereto, and the layer formed by the deposition process can be a functional layer such as a hole transport layer, a charge transport layer. Alternatively, the layer formed by the deposition process can also be a capping layer, an encapsulation layer, or the like disposed on the second electrode CAE.

[0150] Industrial applicability

[0151] The deposition apparatus according to the exemplary embodiment of the present application can be applied to a process of manufacturing a display apparatus included in a computer, a notebook, a mobile phone, a smart phone, a smart pad, a portable media player (PMP), a personal digital assistant (PDA), an MP3 player, or the like.

[0152] In the foregoing, the present application has been described with reference to the embodiments thereof. It will be understood by those of ordinary skill in the technical field to which the present application pertains that various modifications and changes can be made thereto without departing from the spirit and scope of the present application as set forth in the appended claims.

Claims

1. A deposition apparatus characterized by comprising: comprising: a deposition source that ejects a deposition material toward a substrate through an ejection port; an angle limiting plate having a cross-sectional shape of a polygon that defines a first region, a second region, and a third region, the first region being arranged at a periphery of the ejection port to limit an ejection angle of the deposition material and having a first temperature, the second region intersecting the first region and having a second temperature different from the first temperature, the third region being located between the first region and the second region and having a third temperature different from the first temperature and the second temperature, the angle limiting plate removing contaminants while repeatedly moving in the first region, the second region, and the third region by a rotational action; and a rotational driving device that rotates the angle limiting plate.

2. The deposition apparatus according to claim 1, further comprising: a heating device that heats the second region of the angle limiting plate.

3. The deposition apparatus according to claim 2, wherein the heating device is an induction heating device including an induction coil.

4. The deposition apparatus according to claim 3, wherein the induction heating device further includes a cooling pipe arranged to be spaced apart from the induction coil, cooling water that flows inside the cooling pipe prevents the induction coil from increasing in temperature.

5. The deposition apparatus according to claim 2, wherein the heating device supplies heat to the second region that is above a vaporization / sublimation temperature of the deposition material.

6. The deposition apparatus according to claim 1, wherein the second temperature is greater than the first temperature and the third temperature.

7. The deposition apparatus according to claim 1, further comprising: a cooling device, the cooling device is arranged above the third region of the angle limiting plate and cools the third region.

8. The deposition apparatus according to claim 7, wherein the third temperature is less than the first temperature and the second temperature.

9. The deposition apparatus according to claim 1, wherein the angle limiting plate includes stainless steel.

10. The deposition apparatus according to claim 1, wherein the deposition material includes a light emitting material. ​ ​

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