Temperature stabilization unit and equipment with temperature stabilization unit
By using a combination design of a placement stage, support chuck, and vacuum components in the temperature stabilization unit, the problem of uneven temperature caused by residual water on the back of the silicon wafer was solved, achieving efficient removal of residual water and precise temperature control, thus improving the processing accuracy and cleanliness of the lithography equipment.
Patent Information
- Application Number
- CN202520590494.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-03-31
- Publication Date
- 2026-02-24
- Estimated Expiration
- 2035-03-31
AI Technical Summary
In existing technologies, residual moisture on the back of the silicon wafer causes uneven temperature, affecting alignment and overlay accuracy, and the residual water may also contaminate the transfer arm.
It adopts a combination design of placement platform, support chuck and vacuum component. Compressed gas is blown in through air hole to remove residual water, and residual water is sucked out through channel by vacuum component. Temperature control is achieved by combining heating or cooling components.
It effectively removes residual water from the back of the silicon wafer, reduces the thermal effect caused by uneven temperature, lowers the risk of subsequent silicon wafer contamination, and improves processing precision.
Smart Images
Figure CN223941222U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of semiconductor equipment, and in particular to a temperature stabilizing unit and an equipment having the temperature stabilizing unit. Background Technology
[0002] The Temperature Stability Unit (TSU) is an important component of photolithography equipment. It controls the temperature stability of silicon wafers before they enter the photolithography equipment, ensuring that the silicon wafers are in a stable temperature state when they enter the workpiece stage of the photolithography equipment. This reduces the thermal effects on the silicon wafers caused by temperature, thereby reducing the impact on overlay accuracy.
[0003] The temperature stabilization unit includes a placement stage and a P-chuck. Multiple vents are distributed on the placement stage, and the P-chuck is located at the center of the stage. After the silicon wafer is placed onto the stage by the transfer arm, the P-chuck rises, lifting the wafer and creating a certain height difference between the wafer and the stage surface. The wafer is then pre-aligned and rotated. Residual water on the back side of the wafer (the surface opposite the stage surface) accumulates towards the edges under centrifugal force. Compressed air is blown through the vents towards the back side of the wafer, causing the residual water to evaporate and decrease. However, the residual water cannot be completely removed, leaving localized residues on the back side. Throughout the process of removing residual water, the wafer remains lifted by the P-chuck and does not contact the placement stage. These localized residual waters on the back side of the wafer cause uneven wafer temperature, leading to excessively rapid temperature drops in certain areas and resulting in thermal effects during alignment and overlay. Furthermore, some residual water may remain on the transfer arm, contaminating the next wafer and even subsequent wafers.
[0004] Therefore, how to solve the above-mentioned technical problems should be a key focus for those skilled in the art. Utility Model Content
[0005] The purpose of this application is to provide a temperature stabilization unit and a device having a temperature stabilization unit to improve the removal of residual water on the back of the temperature-controlled silicon wafer, and to avoid the thermal effect caused by residual water and the contamination of the transmission arm.
[0006] To address the aforementioned technical problems, this application provides a temperature stabilizing unit, comprising:
[0007] The system includes a placement platform, a support chuck, and a vacuum assembly. The placement platform is equipped with air holes and channels, and the vacuum assembly is aligned with the channels.
[0008] The vent is used to introduce compressed gas toward the back of the silicon wafer to be controlled when the wafer leaves the placement stage.
[0009] The support chuck is used to lift the silicon wafer to be temperature controlled, so that the silicon wafer to be temperature controlled leaves the placement stage; and after the compressed gas is introduced, it drives the silicon wafer to be temperature controlled to fall back onto the placement stage.
[0010] The vacuum assembly is used to vacuum adsorb residual water located on the back of the silicon wafer to be controlled when the silicon wafer to be controlled falls onto the placement stage.
[0011] Optionally, the shape of the channel may include an annular shape.
[0012] Optionally, the number of channels is at least two, and the channels are distributed in concentric circles with the support chuck as the center.
[0013] Optionally, it also includes:
[0014] The first moisture purging device, located below the placement platform and between two adjacent channels, is used to generate compressed gas and purge the adsorbed residual water into the drainage trough.
[0015] Optionally, the vacuum assembly includes a vacuum control unit and a pipeline, one end of which is aligned with the channel and the other end of which is connected to the vacuum control unit.
[0016] Optionally, the number of vacuum control units is equal to the number of channels.
[0017] Optionally, the air holes are distributed in concentric circles with the support chuck as the center.
[0018] Optionally, it also includes:
[0019] A second moisture purging device connected to the vent is used to generate compressed gas.
[0020] Optionally, it also includes:
[0021] Heating electrodes are used to heat the silicon wafer to be controlled.
[0022] This application also provides a device including any of the temperature stabilizing units described above.
[0023] This application provides a temperature stabilization unit, comprising: a placement stage, a support chuck, and a vacuum assembly. The placement stage is provided with vents and channels. The vacuum assembly is aligned with the channels. The vents are used to introduce compressed gas toward the back of the silicon wafer to be regulated when it leaves the placement stage. The support chuck is used to lift the silicon wafer to be regulated, causing it to leave the placement stage. After the compressed gas is introduced, it causes the silicon wafer to fall back onto the placement stage. The vacuum assembly is used to vacuum-absorb residual water located on the back of the silicon wafer through the channels when it falls onto the placement stage.
[0024] As can be seen, the temperature stabilization unit of this application includes a placement stage, a support chuck, and a vacuum assembly. The placement stage not only has air holes but also channels, and the vacuum assembly is connected to the channels. When the silicon wafer to be temperature-controlled is lifted from the placement stage by the support chuck, compressed gas can be blown onto the silicon wafer through the air holes, causing residual water on the back of the silicon wafer to evaporate and be partially removed. The support chuck then lowers the silicon wafer back onto the placement stage, and the vacuum adsorption assembly evacuates the back of the silicon wafer through the channels. The residual moisture on the back of the silicon wafer is drawn away by the vacuum suction, thereby effectively removing residual water from the back of the silicon wafer, reducing the thermal effects of alignment and overlay caused by uneven temperature, and also reducing the possibility of moisture remaining on the transfer arm, thus reducing the risk of contamination of subsequent silicon wafers to be temperature-controlled.
[0025] In addition, this application also provides a device with a temperature stabilization unit that has the above-mentioned advantages. Attached Figure Description
[0026] To more clearly illustrate the technical solutions of the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0027] Figure 1 This is a schematic diagram of the structure of a temperature stabilization unit in the prior art;
[0028] Figure 2 This is a schematic diagram of the cross-sectional structure of a temperature stabilization unit in the prior art during operation.
[0029] Figure 3 This is a schematic diagram of the structure of a temperature stabilizing unit provided in an embodiment of this application;
[0030] Figure 4 The temperature stabilizing unit provided in the embodiments of this application operates along the edge Figure 3Schematic diagram of section AB;
[0031] Figures 5 to 9 A flowchart illustrating the removal of residual water during operation of a temperature stabilization unit provided in this application embodiment;
[0032] In the figure, 1 is the placement stage, 2 is the P-chuck, 3 is the silicon wafer to be controlled, 4 is the support chuck, 5 is the vacuum assembly, 6 is the first moisture purging device, 7 is the inner shell, 11 is the vent, 12 is the channel, 51 is the vacuum control unit, and 52 is the pipeline. Detailed Implementation
[0033] To enable those skilled in the art to better understand the present application, the present application will be further described in detail below with reference to the accompanying drawings and specific embodiments. Obviously, the described embodiments are merely some embodiments of the present application, and not all embodiments. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.
[0034] Many specific details are set forth in the following description in order to provide a full understanding of the present invention. However, the present invention may also be implemented in other ways different from those described herein. Those skilled in the art can make similar extensions without departing from the spirit of the present invention. Therefore, the present invention is not limited to the specific embodiments disclosed below.
[0035] Please refer to Figure 1 and Figure 2 The existing temperature stabilization unit includes a placement stage 1 and a P-chuck 2. Multiple air holes 11 are distributed on the placement stage 1, and the P-chuck 2 is located at the center of the placement stage 1. When the temperature stabilization unit is working, the P-chuck 2 lifts the silicon wafer 3 to be regulated, and compressed air is sprayed from the air holes 11 onto the back of the silicon wafer 3. Currently, this method can remove residual water from the back of the silicon wafer 3, but it cannot remove it completely.
[0036] In view of this, this application provides a temperature stabilization unit, please refer to... Figures 3 to 4 ,include:
[0037] The system includes a placement platform 1, a support chuck 4, and a vacuum assembly 5. The placement platform 1 is provided with an air hole 11 and a channel 12, and the vacuum assembly 5 is aligned with the channel 12.
[0038] The vent 11 is used to introduce compressed gas toward the back of the silicon wafer 3 to be controlled when the silicon wafer 3 to be controlled leaves the placement stage 1;
[0039] The support chuck 4 is used to lift the silicon wafer 3 to be temperature controlled, so that the silicon wafer 3 to be temperature controlled is removed from the placement platform 1; and after the compressed gas is introduced, it drives the silicon wafer 3 to be temperature controlled to fall back to the placement platform 1.
[0040] The vacuum assembly 5 is used to vacuum adsorb residual water on the back side of the silicon wafer 3 when it falls onto the placement platform 1.
[0041] It should be noted that the temperature stabilization unit also includes an outer shell and an inner shell 7. The outer shell is used to house the inner shell 7, the placement stage 1, the support chuck 4, and the vacuum assembly 5. The outer shell can provide a sealed environment, and the vacuum assembly 5 generates a vacuum to absorb residual water. The inner shell 7 is used to house the vacuum assembly 5. The inner shell 7 has an opening at the position opposite to the channel 12 so that the vacuum assembly 5 can evacuate the back of the temperature-controlled silicon wafer 3 through the opening.
[0042] The side of the inner shell 7 is a drainage groove, into which residual water adsorbed by vacuum is drained.
[0043] The shape of the placement stage 1 is generally the same as that of the silicon wafer 3 to be temperature controlled, which is circular. The vent 11 and the channel 12 penetrate the placement stage 1 in the thickness direction.
[0044] It should be noted that the shape of the vent 11 is not limited in this embodiment and can be set by the user.
[0045] As one possible implementation method, the shape of the pore 11 can be circular to facilitate processing and reduce processing difficulty.
[0046] As one possible implementation, the temperature stabilizing unit may further include a second moisture purging device connected to the vent 11, used to generate compressed gas. The compressed gas may be air.
[0047] It should be noted that the shape of channel 12 is not limited in this application and can be set by the user.
[0048] As one possible implementation, the channel 12 is annular in shape. The shape of the channel 12 is the same as that of the silicon wafer 3 to be temperature controlled, which facilitates the removal of residual water at different positions on the back of the silicon wafer 3 under vacuum suction, thereby improving the degree of removal of residual water on the back of the silicon wafer 3.
[0049] As one possible implementation, the vents 11 are arranged in concentric circles with the support chuck 4 as the center, so as to improve the removal of residual water on the back of the silicon wafer 3 to be controlled when the temperature is blown through the vents 11.
[0050] The support chuck 4 is located at the center of the placement platform 1. The support chuck 4 can adsorb the silicon wafer 3 to be controlled by temperature and lift it up. Then it can be rotated for pre-alignment. During the rotation, the residual water on the back of the silicon wafer 3 to be controlled by temperature is thrown to the edge area of the silicon wafer 3 under the action of centrifugal force.
[0051] By blowing compressed gas (e.g., compressed air) onto the back of the silicon wafer 3 to be temperature-controlled through the vent 11, some residual water on the back of the silicon wafer 3 can be removed. The vacuum assembly 5 can generate vacuum suction. The vacuum assembly 5 is aligned with the channel 12, so the remaining residual water on the back of the silicon wafer 3 to be temperature-controlled can be pumped out through the channel 12.
[0052] In one possible implementation, the vacuum assembly 5 includes a vacuum control unit 51 and a pipe 52. One end of the pipe 52 is aligned with the channel 12, and the other end of the pipe 52 is connected to the vacuum control unit 51. The vacuum control unit is used to control the generation of a vacuum, and one end of the pipe 52 is located at an opening in the inner shell 7.
[0053] It should be noted that the vacuum component 5 can also adopt other structures, which are not limited in this application.
[0054] The number of vacuum control units 51 in the vacuum assembly 5 can be one, or it can be determined according to the number of channels 12.
[0055] As one possible implementation, the number of vacuum control units 51 is equal to the number of channels 12, and the pipe 52 connected to one vacuum control unit 51 is aligned with one channel 12, so as to facilitate individual control of the vacuum adsorption of each channel 12.
[0056] The temperature stabilization unit in this embodiment includes a placement stage 1, a support chuck 4, and a vacuum assembly 5. The placement stage 1 has not only air holes 11 but also channels 12, and the vacuum assembly 5 is connected to the channels 12. When the silicon wafer 3 to be temperature controlled is lifted off the placement stage 1 by the support chuck 4, compressed gas can be blown onto the silicon wafer 3 through the air holes 11, causing the residual water on the back of the silicon wafer 3 to evaporate and be partially removed. The support chuck 4 then lowers the silicon wafer 3 back onto the placement stage 1, and the vacuum adsorption assembly evacuates the back of the silicon wafer 3 through the channels 12. The residual water on the back of the silicon wafer 3 is drawn away by the vacuum suction, thereby effectively removing the residual water on the back of the silicon wafer 3, reducing the thermal effects of alignment and overlay caused by uneven temperature, and also reducing the possibility of residual water remaining on the transfer arm, thus reducing the possibility of contamination of the subsequent silicon wafers 3.
[0057] Based on the above embodiments, in one embodiment of this application, the channel 12 is annular in shape, the number of channels 12 is at least two, and the channels 12 are distributed in concentric circles with the support chuck 4 as the center.
[0058] As one possible implementation, the placement platform 1 has three concentric circles of air holes 11 and two annular channels 12, which are distributed between two adjacent circles of air holes 11.
[0059] In this implementation, at least two channels 12 are arranged in concentric circles, which can simultaneously drain residual water from the inner and outer sides of the back of the silicon wafer 3 to be controlled, thereby improving the degree of residual water removal.
[0060] As one possible implementation, the temperature stabilizing unit may further include:
[0061] The first moisture purging device 6, located below the placement platform 1 and corresponding to the two adjacent channels 12, is used to generate compressed gas and purge the adsorbed residual water into the drainage tank.
[0062] The first moisture purging device 6 is located in the inner shell 7. The inner shell 7 has a ring of purging holes in the middle area corresponding to the two adjacent channels 12. The compressed gas outlet of the first moisture purging device 6 is located in the purging holes. The compressed gas generated by the first moisture purging device 6 purges the residual water adsorbed from the channel 12, purging the residual water into the channel 12 of the drainage tank, thereby quickly and effectively draining the adsorbed residual water into the drainage tank.
[0063] like Figure 4 As shown, there are two drainage channels, located on the side of the inner shell 7, and on the side of one channel 12 away from the other channel 12. The compressed gas generated by the first water purging device 6 can purge the residual water adsorbed from each channel 12 and flowing in the opposite direction to the drainage channel closest to the channel 12 into the drainage channel closest to the channel 12.
[0064] Based on any of the above embodiments, in one embodiment of this application, the temperature stabilization unit further includes:
[0065] Heating electrodes are used to heat the temperature-controlled silicon wafer 3.
[0066] The placement stage 1 is equipped with multiple temperature sensors, which can measure the temperature of different areas of the silicon wafer 3 to be controlled. When the temperature of one or more areas is low, the silicon wafer 3 to be controlled can be locally heated by heating electrodes to achieve precise temperature control of the silicon wafer 3 to be controlled.
[0067] Based on any of the above embodiments, in one embodiment of this application, the temperature stabilization unit further includes a cooling component for cooling the silicon wafer 3 to be controlled.
[0068] The cooling components can be circulating cooling water pipes, where the cooling water can absorb heat and lower the temperature.
[0069] The placement platform 1 is equipped with multiple temperature sensors, which can measure the temperature of different areas of the silicon wafer 3 to be controlled. When the temperature of one or more areas is too high, the silicon wafer 3 to be controlled can be locally cooled by the cooling components to achieve precise temperature control of the silicon wafer 3 to be controlled.
[0070] The process of removing residual water from the back side of the temperature-controlled silicon wafer 3 by the temperature stabilization unit in this application is described below.
[0071] (1) such as Figure 5 As shown, there may be residual water on the back side of the silicon wafer 3 to be controlled, and the distribution location may be the entire silicon wafer;
[0072] (2) such as Figure 6 As shown, the silicon wafer 3 to be temperature controlled enters the temperature stabilization unit and is placed on the placement stage 1. The support chuck 4 adsorbs the silicon wafer 3 to be temperature controlled and lifts it up. Then it is rotated for pre-alignment. During this process, due to the centrifugal force, water will be thrown to the edge of the silicon wafer 3 to be temperature controlled.
[0073] (3) such as Figure 7 As shown, after the temperature-controlled silicon wafer 3 is pre-aligned, it is in a static state. The placement stage 1 has three rings of air holes 11 and two annular channels 12. Compressed air is blown through the air holes 11 to the back of the temperature-controlled silicon wafer 3. The residual water is partially removed in this process, but it cannot be completely removed.
[0074] (4) such as Figure 8 and Figure 4 As shown, the silicon wafer 3 to be temperature controlled falls onto the placement stage 1 along with the support chuck 4. A vacuum control unit 51 is connected to two pipes 52, each pipe 52 corresponding to a channel 12. The vacuum control unit 51 starts working and activates the vacuum. The residual water on the back of the silicon wafer 3 is drawn into the drainage tank by the suction of the vacuum. At the same time, the first water blowing device 6, located between the two channels 12, sprays compressed air, which blows the residual water flowing in the opposite direction of the drainage tank into the drainage channel 12 of the drainage tank, thus removing the residual water from the back of the silicon wafer 3. Figure 9 As shown.
[0075] This application also provides a device including the temperature stabilizing unit described in any of the above embodiments.
[0076] The various embodiments in this specification are described in a progressive manner. Each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referred to each other.
[0077] The temperature stabilizing unit and the device having the temperature stabilizing unit provided in this application have been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of this application. The descriptions of the embodiments above are only for the purpose of helping to understand the solution and core ideas of this application. It should be noted that those skilled in the art can make several improvements and modifications to this application without departing from the principles of this application, and these improvements and modifications also fall within the protection scope of this application.
Claims
1. A temperature stabilizing unit, characterized in that, include: The system includes a placement platform, a support chuck, and a vacuum assembly. The placement platform is equipped with air holes and channels, and the vacuum assembly is aligned with the channels. The vent is used to introduce compressed gas toward the back of the silicon wafer to be controlled when the wafer leaves the placement stage. The support chuck is used to lift the silicon wafer to be temperature controlled, so that the silicon wafer to be temperature controlled leaves the placement stage; and after the compressed gas is introduced, it drives the silicon wafer to be temperature controlled to fall back onto the placement stage. The vacuum assembly is used to vacuum adsorb residual water located on the back of the silicon wafer when it falls onto the placement platform.
2. The temperature stabilizing unit as described in claim 1, characterized in that, The shape of the channel includes an annular shape.
3. The temperature stabilizing unit as described in claim 2, characterized in that, The number of channels is at least two, and the channels are distributed in concentric circles with the support chuck as the center.
4. The temperature stabilizing unit as described in claim 3, characterized in that, Also includes: The first moisture purging device, located below the placement platform and corresponding to the two adjacent channels, is used to generate compressed gas and purge the adsorbed residual water into the drainage tank.
5. The temperature stabilizing unit as described in claim 1, characterized in that, The vacuum assembly includes a vacuum control unit and a pipeline, one end of which is aligned with the channel, and the other end of which is connected to the vacuum control unit.
6. The temperature stabilizing unit as described in claim 5, characterized in that, The number of vacuum control units is equal to the number of channels.
7. The temperature stabilizing unit as described in claim 1, characterized in that, The air holes are distributed in concentric circles with the support chuck as the center.
8. The temperature stabilizing unit as described in claim 1, characterized in that, Also includes: A second moisture purging device connected to the vent is used to generate compressed gas.
9. The temperature stabilizing unit as described in any one of claims 1 to 8, characterized in that, Also includes: Heating electrodes are used to heat the silicon wafer to be controlled.
10. A device, characterized in that, Includes the temperature stabilizing unit as described in any one of claims 1 to 9.