Reconfigurable grid-control filter circuit

Abstract

The utility model relates to a reconfigurable grid-control filter circuit, which comprises a reconfigurable transistor, the reconfigurable transistor adopts semimetal carbon nano tube electrode contact and tungsten diselenide channel materials, boron nitride is used as a gate medium, metal gold is used as a bottom gate electrode, and the bottom gate electrode is used as a gate electrode. The drain electrode of the reconfigurable transistor serves as the signal input end of the circuit, the source electrode of the reconfigurable transistor is grounded, and the grid electrode of the reconfigurable transistor serves as the working state control end of the circuit and is used for receiving grid electrode voltage to regulate and control the working state of the reconfigurable transistor; the resistance value of the pull-down resistor is 500 megohms, one end of the pull-down resistor is connected to a node between the source electrode of the reconfigurable transistor and the ground, and the other end of the pull-down resistor serves as a signal output end of the circuit. The circuit can realize a grid-controlled rectifying and filtering function, and can sequentially show five functional modes of all-pass, positive-pass, all-off, reverse-pass and all-pass through regulation and control of grid voltage.

Description

TECHNICAL FIELD

[0001] The utility model relates to the related technical field of electronics, especially relates to a reconfigurable grid control filter circuit, and the invention has important application prospect in the field of electronics. BACKGROUND

[0002] The feature size of silicon-based field effect transistor (FET) has approached its physical limit, and the semiconductor industry has entered the post-moore era. New two-dimensional semiconductors have excellent electrostatic properties and can be efficiently integrated through van der waals (vdW) interaction, and are considered to be the next generation of semiconductor materials, suitable for the manufacture of reconfigurable devices and circuits. Reconfigurable circuits aim to integrate more circuit functions without changing the physical size and number of circuits, and are a research hotspot in the field of electronics.

[0003] The rectifier filter circuit is a basic circuit in electronic circuits, which can convert alternating current (AC) to direct current (DC) and reduce voltage fluctuations, and is widely used in power adapters, electronic devices and communication systems. The rectification process is through diodes or thyristors and other elements to let the unidirectional pulsating voltage of alternating current pass through, thereby forming direct current. Designing a reconfigurable rectifier filter circuit is of great significance for enriching circuit functions and improving circuit equivalent integration. SUMMARY

[0004] The utility model provides a reconfigurable grid control filter circuit, characterized by comprising:

[0005] A reconfigurable transistor, the reconfigurable transistor adopts a semi-metallic carbon nanotube electrode contact and a tungsten diselenide channel material, and boron nitride as a gate dielectric and gold as a bottom gate electrode, the drain of the reconfigurable transistor as a signal input terminal of the circuit, the source grounded, and the gate as a working state control terminal of the circuit for receiving a gate voltage (V g ) to regulate the working state of the reconfigurable transistor.

[0006] A pull-down resistor, the resistance value of the pull-down resistor is 500MΩ, one end of the pull-down resistor is connected to a node between the source of the reconfigurable transistor and the ground, and the other end is connected to the signal output terminal of the circuit.

[0007] The reconfigurable grid control filter circuit of the utility model adjusts the gate voltage, so that the reconfigurable transistor successively exhibits five working states of bidirectional conduction resistance, forward conduction diode, open circuit, reverse conduction diode and bidirectional conduction resistance, thereby realizing five function modes of full pass, positive pass, full off, reverse pass and full pass in the circuit. BRIEF DESCRIPTION OF DRAWINGS

[0008] Figure 1 The structural schematic diagram of the reconfigurable filter circuit is provided.

[0009] Figure 2 The equivalent circuit diagram of five function models of the reconfigurable filter circuit is provided.

[0010] Figure 3 The input signal and the corresponding V g of the reconfigurable filter circuit provided by the utility model is equal to -7V to 5V output signal. DETAILED DESCRIPTION

[0011] The specific embodiments of the utility model will be described in detail below with reference to the drawings.

[0012] A reconfigurable gate-controlled filter circuit, characterized in that, comprising: a reconfigurable transistor, the drain thereof serving as a signal input end of the circuit, the source thereof being grounded, and the gate thereof serving as a working state control end of the circuit, used for receiving a gate voltage (V g ); a pull-down resistor (R ref ), one end of which is connected to a node between the source of the reconfigurable transistor and the ground, and the other end thereof serving as a signal output end of the circuit.

[0013] The preparation of the reconfigurable gate-controlled filter circuit comprises the following steps:

[0014] A tungsten diselenide (WSe2) reconfigurable transistor using a semi-metal carbon nanotube (CNT) contact is prepared. The device uses a localized metal gold (Au) as a bottom gate electrode, and uses a 15 nm thick layered two-dimensional material h-BN as a gate dielectric. The detailed preparation process of the device is as follows:

[0015] (1) A Si / 300 nm SiO2 substrate used for device preparation is prepared in advance;

[0016] (2) A patterned bottom gate Ti / Au electrode (5 nm / 20 nm) is prepared through photolithography and electron beam evaporation;

[0017] (3) A PDMS dry transfer technology is used to peel off and transfer h-BN with a size of more than 20 μm and uniform thickness onto the bottom gate electrode;

[0018] (4) Annealing is performed at 300℃ under an Ar / H2 atmosphere of 400 mTorr for 1h to remove residual glue, so that the h-BN forms a firm contact with the Au electrode and the SiO2 substrate;

[0019] (5) A PDMS dry transfer technology is used to peel off and transfer a thin layer of WSe2 with a suitable size and shape onto the h-BN dielectric;

[0020] (6) Screen and site transfer two CNT electrodes;

[0021] (7) Anneal at 300℃, 400 mTorr Ar / H2 atmosphere for 1 h to remove the residual glue and sulfur particles on the surface of CNTs;

[0022] (8) Take scanning electron microscope (SEM) photos to confirm the location of the heterojunction;

[0023] (9) Anneal at 300℃, 400 mTorr Ar / H2 (volume ratio 10:1) atmosphere for 1 h to remove the carbon deposition;

[0024] (10) Fabricate patterned Pd / Au electrodes (10 nm / 50 nm) by electron beam exposure and electron beam evaporation process;

[0025] (11) Anneal at 300℃, 400 mTorr Ar atmosphere for 1 h to optimize the interface contact between Pd metal and CNTs, WSe2.

[0026] A reconfigurable filter circuit is prepared according to the circuit diagram shown in Figure 1 The reconfigurable transistor and a 500 MΩ resistor are connected by spot welding process.

[0027] The electrical characteristics of the reconfigurable filter circuit are measured by a vacuum probe station. By applying a proper gate voltage V g , the reconfigurable transistor can be set to five functional modes of equivalent small resistance, forward rectifying diode, open circuit, reverse rectifying diode and small resistance, respectively, thereby realizing the reconfigurable gate-controlled filtering function. As shown in Figure 2 , the input signal is set to a sinusoidal wave with an amplitude of 3 V. As the gate voltage V g scans from -7 V to 5 V, the filter sequentially exhibits the functional modes of all-pass, positive-pass, all-off, reverse-pass and all-pass. Figure 3 The equivalent circuit schematic diagrams of the reconfigurable gate-controlled filter circuit working in different modes are drawn. The five functional modes of the circuit originate from the rich working states of the reconfigurable transistor under the regulation of the gate voltage. As V g scans from -7 V to 5 V, the reconfigurable transistor exhibits the working states of bidirectional conduction resistance (hole conduction), forward conduction diode (hole conduction), open circuit, reverse conduction diode (electron conduction) and bidirectional conduction resistance (electron conduction), respectively.

Claims

1. A reconfigurable gata-controlled filter circuit, characterized by, Comprising: A reconfigurable transistor adopts semi-metal carbon nanotube electrode contact and tungsten diselenide channel material, and boron nitride as gate dielectric and metal gold as bottom gate electrode, the drain of the reconfigurable transistor is used as the signal input end of the circuit, the source is grounded, and the gate is used as the working state control end of the circuit for receiving gate voltage (V g ) to regulate the working state of the reconfigurable transistor. a pull-down resistor, the resistance value of which is 500MΩ, one end of which is connected to a node between the source of the reconfigurable transistor and the ground, and the other end of which serves as a signal output end of the circuit.

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