12-18GHz switch assembly

Abstract

The utility model provides a 12-18GHz switch assembly which comprises a plurality of switch units sealed in a metal shell, a switch element comprises two control ends and an output end, the output end is connected to the output end of the switch unit through a first capacitor, and two input ends are connected to the input end of a switch signal through a coupling unit; the first branch circuit is connected with a common node between the first capacitor and the output end, and outputs a first branch circuit signal to the output end when the switching element is in an off state; and the second branch circuit is connected with a common node between the first capacitor and the switch element, and outputs a second branch circuit signal to the output end when the switch element is in a conducting state. Therefore, accurate switching of 12-18GHz radio frequency transceiving channels is realized through matching of the capacitor connected to the switch element and the impedance original on the branch, effective ESD protection is provided, insertion loss is reduced, and the linearity of the switch unit is improved.

Description

Technical Field

[0001] This application relates to the field of microwave communication equipment technology, and in particular to a 12-18GHz switching component. Background Technology

[0002] As circuit frequency increases, parasitic effects in switching devices significantly reduce branch impedance, leading to a severe deterioration in insertion loss at high frequencies. In particular, in high-linearity RF front-end modules, these switching devices generate nonlinear crosstalk modulation, further worsening linearity.

[0003] In existing technologies, impedance matching networks or stacked transistors are typically used to improve linearity, but these methods reduce port isolation and insertion loss. Furthermore, ESD protection requirements necessitate the placement of more components between the RF transceiver and the output of the switching assembly, further worsening insertion loss and complicating circuit implementation. Moreover, the added ESD protection devices further degrade the linearity of the switching assembly. Utility Model Content

[0004] To address the shortcomings of existing technologies, this application aims to provide a 12-18GHz switching component. This application, through capacitors and coupling units, can reduce insertion loss and improve the linearity of the switching unit while achieving ESD protection.

[0005] To achieve the above objectives, the 12-18GHz switching assembly provided in this application includes a plurality of switching units enclosed in a metal housing. Each switching unit includes: a switching element comprising two control terminals and an output terminal, wherein the output terminal is connected to the output terminal of the switching unit via a first capacitor, and the two input terminals are respectively connected to the input terminal of a switching signal via a coupling unit; a first branch connecting the common node between the first capacitor and the output terminal, which outputs the first branch signal to the output terminal when the switching element is in the off state; and a second branch connecting the common node between the first capacitor and the switching element, which outputs the second branch signal to the output terminal when the switching element is in the on state.

[0006] Optionally, the 12-18GHz switching assembly as described above, wherein the switching element is an RF NMOS transistor, with its source and gate connected to two control terminals respectively, and its drain connected to a first capacitor.

[0007] Optionally, the 12-18 GHz switching assembly as described in any of the above, wherein the coupling unit includes: a balun and / or an inductor L4.

[0008] Optionally, in any of the 12-18GHz switching components described above, an impedance network is also connected between each control terminal and the switching element.

[0009] Optionally, in any of the 12-18GHz switching components described above, the source of the switching element is AC grounded via a third capacitor.

[0010] Optionally, in any of the 12-18 GHz switching components described above, the impedance network includes a first inductor connected between the gate of the switching element and the control terminal.

[0011] Optionally, in any of the 12-18GHz switching components described above, the impedance network further includes a second inductor, a fourth capacitor, and a second resistor connected in parallel with the third capacitor, wherein the control terminal is connected to a common terminal between the fourth capacitor and the second resistor.

[0012] Optionally, a 12-18 GHz switching assembly as described above, wherein the switching element is an HMC451LP3E.

[0013] Optionally, the 12-18GHz switching assembly as described above, wherein the switching unit employs a standard CMOS process.

[0014] Compared with existing solutions, this application has the following technical advantages:

[0015] The 12-18GHz switching assembly provided in this application includes a switching element and two branches whose on / off states are switched by two control terminals respectively. This application connects a capacitor to the switching element, and by matching the capacitor with the impedance components on the branches, it can achieve accurate switching of the 12-18GHz RF transceiver path, provide effective ESD protection, reduce insertion loss, and improve the linearity of the switching unit.

[0016] Other features and advantages of this application will be set forth in the following description and will be apparent in part from the description or may be learned by practicing the application. Attached Figure Description

[0017] The accompanying drawings are provided to further illustrate the present application and form part of the specification. Together with the embodiments of the present application, they serve to explain the present application but do not constitute a limitation thereof. In the drawings:

[0018] Figure 1 The circuit schematic of a switching unit in the 12-18GHz switching assembly according to this application is shown.

[0019] Figure 2 This is a structural diagram of the 12-18GHz switching assembly of this application. Detailed Implementation

[0020] The preferred embodiments of this application are described below with reference to the accompanying drawings. It should be understood that the preferred embodiments described herein are for illustration and explanation only and are not intended to limit this application.

[0021] The 12-18GHz switching assembly provided in this application is enclosed in Figure 2 The metal casing shown includes several independently arranged unit slots, which are separated from each other by metal partitions. Each unit slot is provided with two branch interfaces and one output aggregation interface. The switching unit in each unit slot includes:

[0022] The switching element Q1 includes two control terminals and one output terminal. The output terminal is connected to the output terminal of the switching unit through a first capacitor C1, and the two input terminals are respectively connected to the input terminal of the switching signal through a coupling unit.

[0023] The first branch connects the common node between the first capacitor C1 and the output terminal, and outputs the first branch signal to the output terminal when the switching element Q1 is in the off state.

[0024] The second branch connects the common node between the first capacitor C1 and the switching element Q1. When the switching element Q1 is in the on state, the second branch signal is output to the output terminal.

[0025] The on / off state of switching element Q1 is controlled by its two connected control terminals. When the switching unit is constructed using standard CMOS technology, switching element Q1 can be specifically configured as an RF NMOS transistor. (Refer to...) Figure 1 The source and gate of the RF NMOS transistor can be connected to two control terminals respectively, and its drain is connected to the first capacitor C1 to cooperate with the coupling unit to achieve ESD protection.

[0026] In a specific implementation, the switching element Q1 can be directly implemented using an externally purchased HMC451LP3E. The coupling unit includes a balun and / or inductor L4 that can be flexibly configured according to the load connected to the output terminal. The inductive reactance in the balun and the inductor reactance, along with the first capacitor C1, reduce insertion loss and improve the linearity of the switching unit.

[0027] In this application, impedance networks can be further connected between the two control terminals and the switching element Q1 to cooperate with the third capacitor C3 connected to the source of the RF NMOS transistor to achieve coupling and provide further ESD protection during the switching process.

[0028] In this circuit, the source of the switching element Q1 is AC grounded through the third capacitor C3 to eliminate the influence of the third capacitor C3 on the receiving impedance. The switching element Q1 is biased into different switching states by DC signals controlled by its two control terminals:

[0029] The gate of switching element Q1 is connected to the control terminal via an impedance network formed by the first inductor L1 and the first capacitor C1. This network works in conjunction with the first capacitor C1 to achieve matching and equalization of the inductive reactance L3 of the balancing-to-unbalancing converter in the first branch, optimizing the insertion loss of the first branch. When the control terminal is at a high voltage, switching element Q1 is turned on, grounding the first capacitor C1 and turning off the electrical path between the second branch and the output terminal. At this time, the total output terminal of the switching unit (e.g., ...) Figure 1 The interfaces of the central switch unit (such as A-to-main, B-to-main, C-to-main, etc.) are arranged according to the first branch (for example, Figure 1 The signals from the interfaces (such as A-branch 1, B-branch 1, and C-branch 1) of the switching unit are output.

[0030] For the control terminal of the RF NMOS transistor source, its impedance network also includes, in parallel with the third capacitor C3: a second inductor L2, a fourth capacitor C4, and a second resistor R2. The control terminal is connected to the common terminal between the fourth capacitor C4 and the second resistor R2. A high voltage at this control terminal switches the RF NMOS transistor off, causing the branch connected to inductor L4 to conduct with the total output terminal, thus enabling the total output terminal of the switching unit (e.g., ...) to conduct. Figure 1 The interfaces of the central switch unit (such as A-to-B, B-to-C, etc.) are configured according to the second branch (for example, Figure 1 The signals from the interfaces of the switch unit (such as A branch 2, B branch 2, and C branch 2) are output.

[0031] It will be understood by those skilled in the art that the above descriptions are merely preferred embodiments of this application and are not intended to limit this application. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or make equivalent substitutions for some of the technical features. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A 12-18 GHz switch assembly characterized by, The switch unit comprises a switch element (Q1) and an impedance network connected between the switch element (Q1) and a ground. The switch element (Q1) comprises two control terminals and an output terminal connected to an output terminal of the switch unit through a first capacitor (C1), and two input terminals connected to input terminals of a switch signal through a coupling unit; A first branch connected between a common node between the first capacitor (C1) and the output terminal outputs a first branch signal to the output terminal when the switch element (Q1) is in an off state; A second branch connected between a common node between the first capacitor (C1) and the switch element (Q1) outputs a second branch signal to the output terminal when the switch element (Q1) is in an on state.

2. The 12-18 GHz switch assembly of claim 1, wherein, The switch element (Q1) is a radio frequency NMOS tube, and a source and a gate thereof are connected to the two control terminals respectively, and a drain thereof is connected to the first capacitor (C1).

3. The 12-18 GHz switch assembly of claim 2, wherein, The coupling unit comprises a balanced-unbalanced transformer and / or an inductor (L4).

4. The 12-18 GHz switch assembly of claim 2, wherein, The impedance network further comprises a second inductor (L2), a fourth capacitor (C4) and a second resistor (R2) connected in parallel with the third capacitor (C3), wherein the control terminal is connected to a common terminal between the fourth capacitor (C4) and the second resistor (R2).

5. The 12-18 GHz switch assembly of claim 4, wherein, The switch element (Q1) is an HMC451LP3E.

6. The 12-18 GHz switch assembly of claim 5, wherein, The switch unit adopts a standard CMOS process.

7. The 12-18 GHz switch assembly of claim 5, wherein, ​ 8. The 12-18 GHz switch assembly of any of claims 1-7, wherein, ​ 9. The 12-18 GHz switch assembly of any of claims 1-7, wherein, ​

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