AFM probe machining part
By designing the connection between the connector and the support in the AFM probe machining part as a weak point and setting stress relief holes at the connection, the problem of unstable breakage when the probe separates from the SOI sheet is solved, and the integrity and reliability of the probe are separated.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-04-21
- Publication Date
- 2026-04-03
AI Technical Summary
In the prior art, the breakage location is often not fixed during the separation process of the AFM probe and the SOI sheet, resulting in residual connection structure or probe damage.
The size of the connection between the connector and the support is smaller than that of the connection between the connector and the silicon wafer. Stress relief holes are set at the connection between the connector and the probe body to form a weak point, so that it can break at this position and avoid damage or residue to the probe body.
This effectively avoids damage to the probe body or residual connection structures on the probe during the separation process, thus improving the reliability and integrity of the separation.
Smart Images
Figure CN224081658U_ABST
Abstract
Description
Technical Field
[0001] This application belongs to the technical field of micro-nano devices, and particularly relates to an AFM probe fabrication component. Background Technology
[0002] Atomic force microscopy (AFM) is a novel experimental technique that utilizes the intermolecular forces to observe the microscopic morphology of object surfaces. It employs a nanometer-sized probe (AFM probe) fixed to a sensitively maneuverable micrometer-sized elastic cantilever. When the probe is brought close to the sample, the forces between the atoms at its tip and the atoms on the sample surface cause the cantilever to bend and deviate from its original position. By reconstructing a three-dimensional image based on the amount of probe deviation or vibration frequency during sample scanning, the morphology or atomic composition of the sample surface can be indirectly obtained. AFM has become a powerful tool for observing and studying the microscopic world.
[0003] The AFM probe is a key component of an atomic force microscope (AFM), and its structure and performance have a significant impact on the instrument's performance, measurement resolution, and image quality. An AFM probe should meet the following requirements: low mechanical elastic modulus, a minimum tip curvature radius, a maximum tip aspect ratio, and high natural frequency, mechanical quality factor, and lateral stiffness.
[0004] The demand for AFM probes is large, and the tip size of AFM probes is generally in the nanometer range. Their small size makes the mass production and transfer a technical challenge in this field.
[0005] In existing processes, AFM probes are typically mass-produced on silicon wafers, with a connection structure remaining between the wafer and the probe to prevent it from falling off. The probe is generally 30 μm x 12 μm x 20 μm long, and the connection structure is set to the same thickness as the probe. Because the thickness of the connection structure is relatively large compared to its length and width, the breakage location often becomes inconsistent during the subsequent separation of the probe from the wafer. This can result in the connection structure remaining on the probe or even damaging it. Therefore, how to effectively separate the probe from the connection structure is a pressing technical problem that needs to be solved in this field. Utility Model Content
[0006] The purpose of this application is to overcome the shortcomings of the prior art and provide an AFM probe processing part, which aims to solve the problem that the fracture position is not fixed during the separation of the existing probe from the SOI sheet.
[0007] This application provides an AFM probe machining component, comprising:
[0008] A silicon wafer has several cavities formed within it;
[0009] A plurality of probe bodies are provided, and at least one probe body is provided in each of the accommodating cavities. The probe body includes a support and a cantilever beam, and the cantilever beam extends outward from the support.
[0010] A connector, the two ends of which are respectively connected to the silicon wafer and the support, wherein the size of the connection between the connector and the support is smaller than that of the connection between the connector and the silicon wafer.
[0011] Optionally, the cross-sectional area of the connector decreases from the silicon wafer to the probe body.
[0012] Optionally, the connector may be semi-circular, triangular, or rhomboid in horizontal projection.
[0013] Optionally, the accommodating cavity is square, and a plurality of the accommodating cavities are evenly arranged on the silicon wafer.
[0014] Optionally, the length of the accommodating cavity is 3-10 mm, the width is 1-5 mm, and the depth is 1-5 mm; the length of the probe body is 1-6 mm, the width is 0.5-3 mm, and the thickness is 1-5 mm.
[0015] Optionally, the cross-sectional length of the connection between the connector and the probe body is less than 0.5 mm, and the cross-sectional length of the connection between the connector and the silicon wafer is less than 1 mm.
[0016] Optionally, a stress relief hole is provided at the connection between the connector and the probe body, so that the separation position between the silicon wafer and the probe body is located at the connection between the connector and the probe body.
[0017] Optionally, the stress relief hole is a rectangular hole, and its long side is located at the connection between the connector and the probe body;
[0018] The ratio of the short side to the long side of the stress relief hole is no greater than 1:5.
[0019] Optionally, the stress relief holes are multiple and arranged laterally along the connector.
[0020] Optionally, the stress relief hole is trapezoidal, with its long side located at the connection between the connector and the probe body; or,
[0021] The stress relief hole is triangular, and its base is located at the connection between the connector and the probe body.
[0022] The AFM probe processing part provided in this application, by designing the connection between the connector and the support to be smaller than that between the connector and the silicon wafer, makes the connection between the connector and the support a weak point, making the connector more prone to breakage at this location, effectively avoiding damage to the probe body or residual parts of the connector on the probe body during separation. Attached Figure Description
[0023] To more clearly illustrate the technical solutions in the embodiments of this application, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0024] Figure 1 This is a schematic diagram of the AFM probe processing component provided in the embodiments of this application. Figure 1 ;
[0025] Figure 2 This is a schematic diagram of the AFM probe processing component provided in the embodiments of this application. Figure 2 This is a schematic diagram of a cavity unit;
[0026] Figure 3 This is a schematic diagram of the AFM probe processing component provided in the embodiments of this application. Figure 3 This is a schematic diagram of a cavity unit;
[0027] Figure 4 This is a schematic diagram of the AFM probe processing component provided in the embodiments of this application. Figure 4 This is a schematic diagram of a cavity unit;
[0028] Figure 5 yes Figure 1 A magnified view of part A in the middle;
[0029] Figure 6 This is a schematic diagram of the stress relief hole in the embodiments of this application. Figure 1 ;
[0030] Figure 7 This is a schematic diagram of the stress relief hole in the embodiments of this application. Figure 2 ;
[0031] Figure 8 This is a schematic diagram of the stress relief hole in the embodiments of this application. Figure 3 ;
[0032] Explanation of icon numbers:
[0033] 10. Silicon wafer; 101. Accommodation cavity; 20. Probe body; 21. Support; 22. Cantilever beam; 30. Connector; 301. Stress relief hole. Detailed Implementation
[0034] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.
[0035] It should be noted that when a component is referred to as being "fixed to" or "set on" another component, it can be directly on or indirectly on that other component. When a component is referred to as being "connected to" another component, it can be directly connected to or indirectly connected to that other component.
[0036] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this application, "multiple" means two or more, unless otherwise explicitly specified.
[0037] It should also be noted that the directional terms such as left, right, up, and down in the embodiments of this application are only relative concepts or are based on the normal use state of the product, and should not be considered as restrictive.
[0038] Please refer to Figures 1 to 8 The AFM probe processing part provided in this application will now be described by way of example.
[0039] The AFM probe assembly includes a silicon wafer 10, a probe body 20, and a connector 30. The connector 30 and probe body 20 are formed by etching on an existing SOI wafer. After etching, the portion excluding the connector 30 and probe body 20 constitutes the silicon wafer 10 as described in this scheme. Separating the probe body 20 from the connector 30 yields the AFM probe.
[0040] Please refer to Figure 1 The silicon wafer 10 has several accommodating cavities 101 and several probe bodies 20. Each accommodating cavity 101 contains at least one probe body 20. Each probe body 20 includes a support 21 and a cantilever beam 22, which extends outward from the support 21. The cantilever beam 22 is the functional part of the probe body 20, serving as the probe tip. The support 21 supports the cantilever beam 22, facilitating its subsequent transfer, positioning, and fixation. The two ends of the connector 30 are connected to the silicon wafer 10 and the support 21, respectively. In other words, the probe body 20 is fixed to the silicon wafer 10 via the connector 30.
[0041] A plurality of accommodating cavities 101 are provided on the silicon wafer 10, and at least one probe body 20 is formed on each accommodating cavity 101 to achieve mass production and transfer.
[0042] Preferably, a plurality of accommodating cavities 101 are evenly arranged on the silicon wafer 10. This arrangement helps to simplify automated production and improve production efficiency.
[0043] In this embodiment, the accommodating cavity 101 is square to simplify manufacturing and design. In other embodiments, the accommodating cavity 101 may also be racetrack-shaped or other shapes, as long as it can accommodate the probe body 20.
[0044] In this embodiment, the size of the connection between the connector 30 and the support 21 is smaller than that of the connection between the connector 30 and the silicon wafer 10. It should be noted that the size of the connection refers to the cross-sectional area of the connection. The smaller size of the connection between the connector 30 and the support 21 than that of the connection between the connector 30 and the silicon wafer 10 includes: the cross-sectional length of the connection between the connector 30 and the support 21 being smaller than that of the connection between the connector 30 and the silicon wafer 10, while the cross-sectional width of the connection between the connector 30 and the support 21 is smaller than or equal to that of the connection between the connector 30 and the silicon wafer 10; the cross-sectional width of the connection between the connector 30 and the support 21 being smaller than that of the connection between the connector 30 and the silicon wafer 10, while the cross-sectional length of the connection between the connector 30 and the support 21 is smaller than or equal to that of the connection between the connector 30 and the silicon wafer 10; or the connection between the connector 30 and the support 21 having an opening so that its cross-sectional area is smaller than that of the connection between the connector 30 and the silicon wafer 10, etc.
[0045] The size of the connection between connector 30 and support 21 is smaller than that between connector 30 and silicon wafer 10. This design makes the connection between connector 30 and support 21 a weak point, making connector 30 more prone to breakage at this location. This effectively avoids damage to probe body 20 or residual parts of connector 30 on probe body 20 during separation.
[0046] In another embodiment of this application, the cross-sectional area of the connector 30 decreases from the silicon wafer 10 to the probe body 20. The reduced cross-sectional area of the connector 30 is such that the position with the smallest cross-sectional area of the connector 30 is located on the side of the connector 30 facing the probe body 20, thereby making it easier for the connector 30 to break at that position under stress.
[0047] Figure 1 In the structure shown, the connector 30 is rectangular in its horizontal projection. Figure 2 In the structure shown, the connector 30 is semi-circular in horizontal projection. Figure 3 In the structure shown, the connector 30 is an equilateral trapezoid in its horizontal projection. Figure 3 The two sides of the equilateral trapezoid shown are optimized into arcs, forming Figure 4The structure shown is as described. Those skilled in the art can also adjust and optimize the shape of the connector 30 according to actual conditions, and no unique limitation is made here.
[0048] In another embodiment of this application, the accommodating cavity 101 has a length of 3-10 mm, a width of 1-5 mm, and a depth of 1-5 mm. The probe body has a length of 1-6 mm, a width of 0.5-3 mm, and a thickness of 1-5 mm.
[0049] The cross-sectional length at the connection between connector 30 and probe body 20 is less than 0.5 mm, and the cross-sectional length at the connection between connector 30 and silicon wafer 10 is less than 1 mm. While ensuring that the cross-sectional length at the connection between connector 30 and probe body 20 is less than the cross-sectional length at the connection with silicon wafer 10, appropriately increasing the difference between the two is beneficial to increasing the probability that the fracture location falls at the connection between connector 30 and probe body 20. Considering the product dimensions and processing technology, the cross-sectional length at the connection between connector 30 and probe body 20 is set to be less than 0.5 mm. Those skilled in the art can specifically set it to 0.1 mm, 0.12 mm, 0.15 mm, 0.19 mm, 0.2 mm, 0.23 mm, 0.25 mm, 0.27 mm, 0.3 mm, 0.32 mm, 0.36 mm, 0.38 mm, 0.4 mm, 0.42 mm, 0.43 mm, 0.47 mm, 0.49 mm, etc., according to actual conditions, and is not limited here. The cross-sectional length of the connection between the connector 30 and the silicon wafer 10 is less than 1 mm. Those skilled in the art can set it to 0.3 mm, 0.35 mm, 0.4 mm, 0.46 mm, 0.5 mm, 0.58 mm, 0.6 mm, 0.63 mm, 0.7 mm, 0.73 mm, 0.78 mm, 0.8 mm, 0.87 mm, 0.9 mm, 0.95 mm, etc., according to the actual situation, and no single limitation is made here.
[0050] In another embodiment of this application, please refer to Figures 5 to 8 A stress relief hole 301 is provided at the connection between the connector 30 and the probe body 20 so that the separation position between the silicon wafer 10 and the probe body 20 is located at the connection between the connector 30 and the probe body 20.
[0051] It is understandable that, to ensure the structural integrity of the probe, the stress relief hole 301 is formed within the area of the connector 30. The stress relief hole 301 is formed at the connection between the connector 30 and the probe body 20, that is, the stress relief hole 301 is formed on the side of the connector 30 near the probe body 20. This arrangement reduces the cross-sectional area of the connector 30 at the location of the stress relief hole 301, making it a weak point and thus more prone to breakage at that location.
[0052] Figure 5In the structure shown, the stress relief hole 301 is a rectangular hole, and its long side is located at the connection between the connector 30 and the probe body 20. The long side of the rectangular hole coincides with the side of the probe body 20 facing the connector 30. This arrangement brings the center of the stress relief hole 301 close to the probe body 20, which is beneficial for the tear location to be close to the probe body 20.
[0053] In another embodiment of this application, the ratio of the short side to the long side of the stress relief hole 301 is no greater than 1:5. It is understood that appropriately increasing the length of the long side of the stress relief hole 301 can reduce the cross-sectional area of the connector 30 at that hole, thereby reducing the structural strength at that location. Conversely, appropriately reducing the length of the short side of the stress relief hole 301 allows the center of the stress relief hole 301 to be closer to the probe body 20, which is beneficial for the tear location to be closer to the probe body 20. Based on the dimensions of the connecting structure and after multiple experiments, controlling the ratio of the short side to the long side to be below 1:5 yields better segmentation results. Those skilled in the art can specifically set this ratio to 1 / 2, 1 / 3, 1 / 4, 1 / 5, 1 / 6, etc., according to actual needs; no unique limitation is made here.
[0054] In another embodiment of this application, please refer to Figure 6 Multiple stress relief holes 301 are arranged laterally along the connector 30. The multiple stress relief holes 301 are arranged sequentially to form a break line, which marks the fracture point of the connector 30 when it is under stress. Those skilled in the art can set the number and size of the stress relief holes 301 according to actual needs, and no limitation is made here.
[0055] In another embodiment of this application, please refer to Figure 7 The stress relief hole 301 is trapezoidal, with its long side located at the connection between the connector 30 and the probe body 20. With this configuration, the cross-sectional area of the connector 30 decreases towards the probe body 20 at the location of the stress relief hole 301, so that the position with the smallest cross-sectional area of the connector 30 is located on the side of the connector 30 facing the probe body 20, making it easier for the connector 30 to break at that location under stress.
[0056] In another embodiment of this application, please refer to Figure 8 The stress relief hole 301 is triangular, with its base located at the connection between the connector 30 and the probe body 20. With this configuration, the cross-sectional area of the connector 30 decreases towards the probe body 20 at the location of the stress relief hole 301, so that the position with the smallest cross-sectional area of the connector 30 is located on the side of the connector 30 facing the probe body 20, making it easier for the connector 30 to break at that location under stress.
[0057] The above are merely preferred embodiments of this application and are not intended to limit this application. Any modifications, equivalent substitutions, or improvements made within the spirit and principles of this application should be included within the protection scope of this application.
Claims
1. An AFM probe machining component, characterized in that, include: A silicon wafer has several cavities formed within it; A plurality of probe bodies are provided, and at least one probe body is provided in each of the accommodating cavities. The probe body includes a support and a cantilever beam, and the cantilever beam extends outward from the support. A connector, the two ends of which are respectively connected to the silicon wafer and the support, wherein the size of the connection between the connector and the support is smaller than that of the connection between the connector and the silicon wafer.
2. The AFM probe machining part as described in claim 1, characterized in that, The cross-sectional area of the connector decreases from the silicon wafer to the probe body.
3. The AFM probe machining part as described in claim 1, characterized in that, The connector appears as a semicircle, triangle, or rhombus in a horizontal projection.
4. The AFM probe machining part as described in claim 1, characterized in that, The accommodating cavity is square, and several of the accommodating cavities are evenly arranged on the silicon wafer.
5. The AFM probe machining part as described in claim 1, characterized in that, The length of the accommodating cavity is 3-10 mm, the width is 1-5 mm, and the depth is 1-5 mm; the length of the probe body is 1-6 mm, the width is 0.5-3 mm, and the thickness is 1-5 mm.
6. The AFM probe machining part as described in claim 1, characterized in that, The cross-sectional length at the connection between the connector and the probe body is less than 0.5 mm, and the cross-sectional length at the connection between the connector and the silicon wafer is less than 1 mm.
7. The AFM probe machining part as described in any one of claims 1 to 6, characterized in that, A stress relief hole is provided at the connection between the connector and the probe body, so that the separation position of the silicon wafer and the probe body is located at the connection between the connector and the probe body.
8. The AFM probe machining part as described in claim 7, characterized in that, The stress relief hole is a rectangular hole, and its long side is located at the connection between the connector and the probe body; The ratio of the short side to the long side of the stress relief hole is no greater than 1:
5.
9. The AFM probe machining part as described in claim 7, characterized in that, The stress relief holes are multiple and arranged laterally along the connector.
10. The AFM probe machining part as described in claim 7, characterized in that, The stress relief hole is trapezoidal, with its long side located at the connection between the connector and the probe body; or, The stress relief hole is triangular, and its base is located at the connection between the connector and the probe body.