A perovskite solar cell with top-down defect passivation
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-08-28
- Publication Date
- 2026-08-11
AI Technical Summary
尽管已取得显著的成果，但多晶钙钛矿薄膜在溶液法制备过程中仍存在难以控制的结晶行为，从而在钙钛矿体相及其与载流子传输层界面引入了大量本征缺陷
本实用新型通过反蛋白石结构钙钛矿层内的三维连续孔洞，为钝化剂的高效渗透提供快速通道，使得钝化剂分布在钙钛矿上表面、钙钛矿体相以及钙钛矿埋底界面，有效增多钝化位点，降低钙钛矿缺陷密度。此外，反蛋白石结构的慢光效应使得入射光与钙钛矿作用时间延长，有效增强钙钛矿光吸收性能。最终获得高效稳定的钙钛矿太阳能电池。
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Figure CN224627107U_ABST
Abstract
Description
Technical Field
[0001] This invention belongs to the field of solar cell technology, specifically relating to a perovskite solar cell with top-down defect passivation. Background Technology
[0002] Perovskite solar cells have rapidly become a rising star in the photovoltaic field due to their low cost, flexibility, portability, and excellent photoelectric performance. To date, the photoelectric conversion efficiency of single-junction perovskite solar cells has reached 27%, highlighting their remarkable development potential. Despite these significant achievements, polycrystalline perovskite thin films still exhibit uncontrollable crystallization behavior during solution-based fabrication, introducing numerous intrinsic defects into the perovskite bulk phase and its interface with the carrier transport layer. These defects act as non-radiative recombination centers, hindering efficient carrier transport and reducing device efficiency; furthermore, they accelerate the decomposition of perovskite materials, leading to rapid performance degradation of the devices.
[0003] To reduce bulk and interfacial defects in perovskites, researchers have proposed various modification methods, including optimized preparation techniques, additive engineering, and interface engineering. However, known modification techniques typically only regulate bulk or interfacial defects, and even simultaneous passivation requires complex procedures, lacking relatively simple passivation strategies. Furthermore, most current interfacial modifications target the perovskite surface, while research on the unexposed buried interface remains insufficient. Utility Model Content
[0004] Addressing the problems of existing technologies, the purpose of this invention is to provide a top-down defect passivation perovskite solar cell. Through the three-dimensional continuous through-pores of the inverse opal structure perovskite, the passivating agent is facilitated to penetrate to the buried interface, thereby achieving overall defect passivation of the perovskite bulk phase and the perovskite / carrier transport layer interface. Furthermore, the slow-light effect of the inverse opal structure helps to prolong the interaction time between incident light and the perovskite, enhancing light absorption performance. Ultimately, a perovskite solar cell with high photoelectric conversion efficiency and good long-term stability is obtained.
[0005] To achieve the above objectives, the present invention adopts the following technical solution: A top-down defect passivated perovskite solar cell includes, from bottom to top, a transparent conductive substrate, an electron transport layer, a first passivator layer, a perovskite layer, a second passivator layer, a hole transport layer, and a back electrode.
[0006] Specifically, the thickness of the transparent conductive substrate is 1.1-2.2 nm; the thickness of the electron transport layer is 50-100 nm; the thickness of the perovskite layer is 300-1000 nm; the thickness of the hole transport layer is 100-200 nm; and the thickness of the back electrode layer is 0.1-15 μm.
[0007] Specifically, the transparent conductive substrate material is FTO transparent conductive glass or ITO transparent conductive glass, etc.
[0008] Specifically, the electron transport layer is made of TiO2 or SnO2.
[0009] Specifically, the perovskite layer has an inverse opal structure.
[0010] Specifically, the anti-opal structure includes perovskite and spherical pores.
[0011] Specifically, the perovskite layer has several layers of spherical pores arranged from top to bottom (preferably 1-3 layers); each layer has several pores.
[0012] Specifically, the spherical pores within the perovskite layer are connected by channels (three-dimensional continuous channels) between adjacent spherical pores in each layer, front and back and / or left and right.
[0013] Specifically, the spherical pores in the perovskite layer are connected by channels (three-dimensional continuous channels) between adjacent layers of spherical pores.
[0014] More preferably, the spherical pores in the perovskite layer are evenly distributed in the front-back and left-right directions in each layer.
[0015] More preferably, the spherical pores in the perovskite layer are distributed alternately in two adjacent layers.
[0016] More preferably, the pore size of the spherical hole is 300-1000 nm.
[0017] Specifically, the perovskite in the perovskite layer is ABX3 (A=CH3NH3). + HC(NH2)2 + Cs + Or a mixture of the three, B=Pb 2+ Sn 2+ Or a mixture of both, X = Cl, Br, I or a mixture of all three) structure, or A2M Ⅰ M Ⅲ X6 (A=CH3NH3) + HC(NH2)2 + Cs + Or a mixture of the three, M Ⅰ = Na + 、Rb + Cu + Ag + 、or In + M Ⅲ = Bi 3+ 、or Sb3+ Perovskites with structures consisting of X = Cl, Br, I, or a mixture of the three.
[0018] Specifically, the hole transport layer is made of NiO x It was prepared from (x=1-2), Spiro-OMeTAD, and PTAA.
[0019] Specifically, the back electrode material is Au, Ag, C, etc.
[0020] Specifically, the first passivating agent layer and the second passivating agent layer are prepared from passivating agents.
[0021] Specifically, the passivating agent is an ionic liquid (e.g., 1-ethyl-3-methylimidazolium), a Lewis base (e.g., 1,3-bis(diphenylphosphine)propane), a metal salt (e.g., potassium chloride), or a two-dimensional material (e.g., molybdenum disulfide).
[0022] The beneficial effects of this utility model are: This invention utilizes the three-dimensional continuous pores within the inverse opal structure of the perovskite layer to provide a rapid channel for the efficient penetration of passivating agents. This allows the passivating agent to be distributed across the perovskite surface, the perovskite bulk phase, and the buried interface, effectively increasing the number of passivation sites and reducing the defect density of the perovskite. Furthermore, the slow-light effect of the inverse opal structure prolongs the interaction time between incident light and the perovskite, effectively enhancing the light absorption performance of the perovskite. Ultimately, this results in a highly efficient and stable perovskite solar cell. Attached Figure Description
[0023] Figure 1 This is a longitudinal cross-sectional schematic diagram of the perovskite solar cell structure in Example 1; Figure 2 This is a longitudinal cross-sectional schematic diagram of the perovskite solar cell structure in Example 2; Figure 3 This is a longitudinal cross-sectional schematic diagram of the perovskite solar cell structure in Example 3; In the figure, 1: transparent conductive substrate, 2: electron transport layer, 3: perovskite layer, 31: spherical hole, 41: lower passivator layer, 42: upper passivator layer, 5: hole transport layer, 6: back electrode. Detailed Implementation
[0024] To make the above-mentioned objectives, technical features, and advantages of this utility model more apparent and understandable, the specific embodiments of this utility model are described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a full understanding of this utility model. However, this utility model can be implemented in many ways other than those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this utility model. Therefore, this utility model is not limited to the specific embodiments disclosed below.
[0025] Example 1 like Figure 1 As shown, a perovskite solar cell with defect passivation from top to bottom includes a transparent conductive substrate 1, an electron transport layer 2, a lower passivating agent layer 41, a perovskite layer 3, an upper passivating agent layer 42, a hole transport layer 5, and a back electrode 6 arranged sequentially from bottom to top.
[0026] The transparent conductive substrate 1 has a thickness of 2.2 nm; the electron transport layer 2 has a thickness of 400 nm; the perovskite layer 3 has a thickness of 1000 nm; the hole transport layer 5 has a thickness of 150 nm; and the back electrode layer 6 has a thickness of 10 μm.
[0027] The transparent conductive substrate 1 is made of FTO transparent conductive glass.
[0028] The electron transport layer 2 is made of TiO2.
[0029] The perovskite layer 3 has an inverse opal structure.
[0030] The inverse opal structure includes perovskite and spherical pores 31.
[0031] Specifically, the perovskite layer 3 has several layers of spherical holes 31 arranged from top to bottom (preferably 1-3 layers); each layer has several holes. Specifically, in this embodiment, the perovskite layer 3 has two layers of spherical holes 31 from top to bottom.
[0032] Each layer of adjacent spherical holes 31, front and back and / or left and right, are connected by channels (three-dimensional continuous channels).
[0033] The two adjacent spherical holes 31 are connected by a channel (three-dimensional continuous channel).
[0034] In a further preferred embodiment, each layer of spherical holes 31 is evenly distributed along the front-back direction and the left-right direction.
[0035] In a further preferred embodiment, the spherical holes 31 in the two adjacent layers are staggered.
[0036] The spherical hole 31 has a diameter of 500 nm.
[0037] The perovskite in the perovskite layer 3 is an inverse opal-structured Cs2AgBiBr6 perovskite.
[0038] The lower passivating layer 41 and the upper passivating layer 42 are prepared from 1-ethyl-3-methylimidazolium.
[0039] The hole transport layer 5 is fabricated using Spiro-OMeTAD.
[0040] The back electrode 6 is made of Au or similar materials.
[0041] The top-down defect-passivated perovskite solar cell is prepared through the following steps: (1) Spin-coating the TiO2 precursor onto the UV-ozone treated FTO transparent conductive glass (i.e., transparent conductive substrate 1) to prepare the TiO2 electron transport layer 2, thus obtaining the FTO / TiO2 substrate.
[0042] (2) Slowly add an ethanol solution of polystyrene (PS) microspheres with a size of 500 nm to a weighing bottle containing deionized water, add a small amount of sodium dodecyl sulfate aqueous solution to form a dense PS microsphere monolayer film, then immerse the FTO / TiO2 substrate from step (1) below the surface of the deionized water, slowly adhere the PS microsphere monolayer film to the FTO / TiO2 substrate, then take it out, and then heat treat it at 60°C for 6 h to obtain a PS monolayer template.
[0043] The PS single-layer template was immersed again below the surface of deionized water, and another PS microsphere single-layer membrane was slowly attached to the PS single-layer template. Then it was taken out and heat-treated at 60°C for 6 hours to obtain a PS double-layer template.
[0044] (3) A 0.15 M Cs2AgBiBr6 perovskite precursor solution was deposited on a PS double-layer template by a hot spin coating process at 70℃ and 2500 rpm to obtain a perovskite film. Then, the film was immersed in toluene for 5 min to remove the PS template by sacrificial template method, and heated at 100℃ for 10 min to remove the residual solvent. Finally, a Cs2AgBiBr6 perovskite film with two layers (number of cycles) of spherical pores 31 was obtained, which is the perovskite layer 3.
[0045] (4) A 1-ethyl-3-methylimidazolium passivating agent solution is spin-coated onto the above-mentioned inverse opal structure Cs2AgBiBr6 perovskite film. The passivating agent can form an upper passivating agent layer 42 at the top of the perovskite layer 3. At the same time, some of the passivating agent can also penetrate into the perovskite through the three-dimensional continuous channels of the inverse opal structure 3 and penetrate downward to the perovskite buried interface. Then, a lower passivating agent layer 41 is formed at the bottom of the perovskite layer 3, thereby forming a perovskite film structure with defect passivation from top to bottom.
[0046] (5) Prepare hole transport layer 5 by spin-coating Spiro-OMeTAD solution onto the upper passivating agent layer 42.
[0047] (6) An Au electrode is deposited on the hole transport layer 5 to obtain the back electrode 6.
[0048] Regarding the fabrication method of perovskite solar cells, the processes and related process parameters not specifically described in this embodiment all adopt conventional settings in the prior art and are not the inventive point of this utility model, so they will not be described in detail.
[0049] Example 2 like Figure 2 As shown, the difference between Example 2 and Example 1 is that: The perovskite layer 3 has three layers of spherical holes 31 from top to bottom.
[0050] The difference between the preparation method and Example 1 is as follows: In step (2), the size of the PS microspheres is 300 nm, the number of layers (number of periods) of the PS template is 3, and the concentration of the Cs2AgBiBr6 perovskite precursor in step (3) is 0.1 M.
[0051] Example 3 like Figure 3 As shown, the difference between Example 3 and Example 1 is that: It does not include hole transport layer 5, and the back electrode 6 is made of carbon.
[0052] The difference between the preparation method and Example 1 is as follows: Steps (5) and (6) are directly replaced by coating carbon slurry onto the upper passivating agent layer 42 and heat-treating at 100°C for 20 min to prepare a carbon electrode. Here, carbon can be used as both a hole transport layer and a back electrode, thereby simplifying the process and reducing the preparation cost.
[0053] The embodiments described above are merely illustrative of several implementations of this utility model, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of this utility model patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this utility model, and these all fall within the protection scope of this utility model. Therefore, the protection scope of this utility model patent should be determined by the appended claims.
Claims
1. A perovskite solar cell with top-down defect passivation, characterized in that, It includes, from bottom to top, a transparent conductive substrate, an electron transport layer, a first passivator layer, a perovskite layer, a second passivator layer, a hole transport layer, and a back electrode; The perovskite layer has an inverse opal structure; The anti-opite structure includes perovskite and spherical pores; The perovskite layer contains several layers of spherical pores arranged from top to bottom; each layer contains several pores.
2. The perovskite solar cell with top-down defect passivation according to claim 1, characterized in that, The thickness of the transparent conductive substrate is 1.1-2.2 nm; the thickness of the electron transport layer is 50-100 nm; the thickness of the perovskite layer is 300-1000 nm; the thickness of the hole transport layer is 100-200 nm; and the thickness of the back electrode layer is 0.1-15 μm.
3. The perovskite solar cell with top-down defect passivation according to claim 1, characterized in that, The transparent conductive substrate material is FTO transparent conductive glass or ITO transparent conductive glass, etc.
4. The perovskite solar cell with top-down defect passivation according to claim 1, characterized in that, The electron transport layer is made of TiO2 or SnO2.
5. The perovskite solar cell with top-down defect passivation according to claim 1, characterized in that, The spherical pores within the perovskite layer are connected by channels between adjacent spherical pores in the front and back and / or left and right sides of each layer. The spherical pores within the perovskite layer are connected by channels between adjacent layers.
6. The perovskite solar cell with top-down defect passivation according to claim 1, characterized in that, The spherical pores within the perovskite layer are evenly distributed along the front-back and left-right directions in each layer.
7. The perovskite solar cell with top-down defect passivation according to claim 1, characterized in that, The spherical pores within the perovskite layer are staggered between adjacent layers.
8. The perovskite solar cell with top-down defect passivation according to claim 1, characterized in that, The perovskite in the perovskite layer has an ABX3 structure or an A2M structure. Ⅰ M Ⅲ X6 structured perovskite.
9. The perovskite solar cell with top-down defect passivation according to claim 1, characterized in that, The hole transport layer is made of NiO x It is prepared from Spiro-OMeTAD and PTAA; The back electrode material is Au, Ag, C, etc.