SURFACE EMIPING LASER, LIGHT SOURCE DEVICE AND ELECTRONIC DEVICE

Abstract

A surface-emitting laser is provided that is capable of reducing series resistance without the need for mesa formation. The surface-emitting laser according to the present technique comprises a first structure including a first reflector, a second structure including a second reflector, and an active layer located between the first and second structures. An electrode is provided within the first structure. According to the surface-emitting laser of the present technique, a surface-emitting laser can be provided that is capable of reducing series resistance without the need for the formation of a mesa.

Description

[Technical field]

[0001] The technology according to the present disclosure (hereinafter also referred to as "the present technology") relates to a surface-emitting laser, a light source device and an electronic device. [State of the art]

[0002] A conventional surface-emitting laser is known in which a first electrode is provided on a rear surface of a substrate and a second electrode is provided on a front surface of a mesa-shaped upper reflector (see, for example, PTL 1). [Citation list][Patent literature]

[0003] [PTL 1] JP 2009-164449A [Summary][Technical Problem]

[0004] However, with conventional surface-emitting lasers, there is room for improvement in reducing series resistance without the need for mesa formation.

[0005] Accordingly, a key objective of the present technique is to provide a surface-emitting laser capable of reducing series resistance without the need for mesa formation. [Solution to the problem]

[0006] The present technology provides a surface-emitting laser comprising the following: a first structure that includes a first reflector; a second structure that includes a second reflector; and an active layer located between the first and second structures, where an electrode is provided within the first structure.

[0007] The first structure can have an interior space, and the electrode can be provided inside the interior space.

[0008] The electrode can be in contact with a wall surface of the interior.

[0009] A current confinement region, comprising at least one annular part for defining a light-emitting region, which defines a light-emitting region of the active layer, can be formed in the first structure and / or the second structure, and the interior can have a surrounding part in which the electrode is arranged, which surrounds a part of the first structure corresponding to a central part of the light-emitting region.

[0010] The electrode can comprise a variety of electrode parts arranged at different positions within the surrounding part.

[0011] Wiring may further be included, wherein the wiring is provided to penetrate the second structure, the active layer, and a portion between the interior of the first structure and the active layer, with one end of the wiring being connected to the electrode. The penetrating portion of the wiring may be surrounded by a region of high resistance or an insulating region.

[0012] Another end of the wiring can be located on a surface opposite a surface of the second structure on which the active layer is located.

[0013] The at least one part for defining a light-emitting region can be a plurality of parts for defining a light-emitting region, and the interior can have a plurality of surrounding parts, each corresponding to one of the plurality of light-emitting regions. The plurality of electrodes provided in the plurality of surrounding parts can be electrically interconnected.

[0014] A material with a low refractive index can be provided in an area of ​​the interior surrounding the electrode.

[0015] In the first structure, a first component part, comprising at least a part of the first reflector, and a second component part can be superimposed and connected to each other, and a first connecting surface, which is a connecting surface of one of the first and second component parts with the other of the first and second component parts, can comprise a wall surface of the interior.

[0016] The interior space can be defined by: a recess provided in a second connecting surface, which is a connecting surface of the other of the first and second component parts with one of the first and second component parts; and the first connecting surface.

[0017] A cross-section of the surrounding part may have a shape that becomes thinner near a center.

[0018] The first structure can include a semiconductor layer that has the wall surface on the side of the active layer.

[0019] Another electrode can be provided on a surface of the second structure opposite the active layer in a top-view area surrounded by the part defining a light-emitting region. This other electrode can have a surrounding area that, in a top-view view, encloses the center of the light-emitting region.

[0020] The second structure can have a mesa that includes at least part of the second reflector, and the other electrode can be located in a region of the second structure within a circumference of the mesa.

[0021] The present technology also provides a light source device comprising: the surface-emitting laser; and a laser driver that controls the surface-emitting laser, the laser driver and the other end of the wiring are connected by a conductive bump.

[0022] The present technology also provides an electronic device that includes the surface-emitting laser. [Brief description of the drawings] [ Fig. 1] Fig. Figure 1A is a sectional view of a surface-emitting laser according to Example 1 of an embodiment of the present technology. Fig. Figure 1B is a top view of the surface-emitting laser according to Example 1 of an embodiment of the present technology. [ Fig. 2] Fig. Figure 2 is a top view of a first reflector and a cathode electrode of the surface-emitting laser according to Example 1 of an embodiment of the present technology. [ Fig. 3] Fig. 3 is a flowchart that shows an example of a process for producing the in Fig. 1 illustrated surface-emitting laser. [ Fig. 4] Fig. 4A and Fig. 4B are cross-sectional views showing the respective steps in the example of the process for producing the in Fig. 1. Illustrate a surface-emitting laser. [ Fig. 5] Fig. 5A and Fig. 5B are cross-sectional views showing the respective steps in the example of the process for producing the in Fig. 1. Illustrate a surface-emitting laser. [ Fig. 6] Fig. 6A and Fig. 6B are cross-sectional views showing the respective steps in the example of the process for producing the in Fig. 1. Illustrate a surface-emitting laser. [ Fig. 7] Fig. 7A and Fig. 7B are cross-sectional views showing the respective steps in the example of the process for producing the in Fig. 1. Illustrate a surface-emitting laser. [ Fig. 8] Fig. 8A and Fig. 8B are cross-sectional views showing the respective steps in the example of the process for producing the in Fig. 1. Illustrate a surface-emitting laser. [ Fig. 9] Fig. 9 is a cross-sectional view showing a step in the example of the process for producing the in Fig. 1 illustrated surface-emitting laser. [ Fig. 10] Fig. Figure 10A is a cross-sectional view of a surface-emitting laser according to Example 2 of an embodiment of the present technology. Fig. Figure 10B is a top view of the surface-emitting laser according to Example 2 of an embodiment of the present technology. [ Fig. 11] Fig. Figure 11 is a cross-sectional view of a surface-emitting laser according to Example 3 of an embodiment of the present technology. [ Fig. 12] Fig. Figure 12 is a flowchart that shows an example of a process for producing the in Fig. 11 surface-emitting lasers are illustrated. [ Fig. 13] Fig. 13A and Fig. 13B are cross-sectional views showing the respective steps in the example of the process for producing the in Fig. 11 illustrated surface-emitting lasers. [ Fig. 14] Fig. 14A to Fig. 14C are cross-sectional views showing the respective steps in the example of the process for producing the in Fig. 11 illustrated surface-emitting lasers. [ Fig. 15] Fig. 15A and Fig. 15B are cross-sectional views showing the respective steps in the example of the process for producing the in Fig. 11 illustrated surface-emitting lasers. [ Fig. 16] Fig. 16A and Fig. 16B are cross-sectional views showing the respective steps in the example of the process for producing the in Fig. 11 illustrated surface-emitting lasers. [ Fig. 17] Fig. 17A and Fig. 17B are cross-sectional views showing the respective steps in the example of the process for producing the in Fig. 11 illustrated surface-emitting lasers. [ Fig. 18] Fig. Figure 18 is a cross-sectional view of a surface-emitting laser according to Example 4 of an embodiment of the present technology. [ Fig. 19] Fig. Figure 19 is a cross-sectional view of a surface-emitting laser according to Example 5 of an embodiment of the present technology. [ Fig. 20] Fig. Figure 20 is a cross-sectional view of a surface-emitting laser according to Example 6 of an embodiment of the present technology. [ Fig. 21] Fig. Figure 21 is a cross-sectional view of a surface-emitting laser according to Example 7 of an embodiment of the present technology. [ Fig. 22] Fig. Figure 22 is a cross-sectional view of a surface-emitting laser according to Example 8 of an embodiment of the present technology. [ Fig. 23] Fig. Figure 23 is a cross-sectional view of a surface-emitting laser according to Example 9 of an embodiment of the present technology. [ Fig. 24] Fig. Figure 24A is a cross-sectional view of a surface-emitting laser according to Example 10 of an embodiment of the present technology. Fig. Figure 24B is a top view of an anode electrode and a cathode electrode of the surface-emitting laser according to Example 10 of an embodiment of the present technology. [ Fig. 25] Fig. Figure 25 is a cross-sectional view of a surface-emitting laser according to Example 11 of an embodiment of the present technology. [ Fig. 26] Fig. Figure 26 is a cross-sectional view of a surface-emitting laser according to Example 12 of an embodiment of the present technology. [ Fig. 27] Fig. 27A to Fig. Figures 27D are diagrams illustrating variations 1 to 4 of an interior of the surface-emitting laser according to an embodiment of the present technology. [ Fig. 28] Fig. 28 is a cross-sectional view of a light source device that incorporates the Fig. 1 illustrated surface-emitting laser includes. [ Fig. 29] Fig. 29 is a cross-sectional view of a light source device that includes the one described in Fig. Includes 24 illustrated surface-emitting lasers. [ Fig. 30] Fig. Figure 30 is a cross-sectional view of an example in which the surface-emitting laser according to Example 1 of an embodiment of the present technology is used in a distance measuring device. [ Fig. 31] Fig. Figure 31 is a block diagram illustrating an example of the overall configuration of a vehicle control system. [ Fig. 32] Fig. Figure 32 is an explanatory diagram illustrating an example of an installation position of a distance measuring device. [Description of embodiments]

[0023] Preferred embodiments of the present technology are described in detail below with reference to the accompanying drawings. In this description and the drawings, components having essentially the same functional configuration are designated by the same reference numerals, and thus repeated descriptions thereof are omitted. The following embodiments describe representative embodiments of the present technology, and the scope of the present technology should not be interpreted narrowly on the basis of these. Although this description describes a surface-emitting laser, a light source device, and an electronic device according to the present technology as having a plurality of effects, it is sufficient that the surface-emitting laser, the light source device, and the electronic device according to the present technology have at least one effect.The beneficial effects described in this description are merely exemplary and not limited, and other beneficial effects may be obtained.

[0024] The descriptions are given in the following order. 0. Introduction 1. Surface-emitting laser according to Example 1 of an embodiment of the present technology 2. Surface-emitting laser according to Example 2 of an embodiment of the present technology 3. Surface-emitting laser according to Example 3 of an embodiment of the present technology 4. Surface-emitting laser according to Example 4 of an embodiment of the present technology 5. Surface-emitting laser according to Example 5 of an embodiment of the present technology 6. Surface-emitting laser according to Example 6 of an embodiment of the present technology 7. Surface-emitting laser according to Example 7 of an embodiment of the present technology 8. Surface-emitting laser according to Example 8 of an embodiment of the present technology 9. Surface-emitting laser according to Example 9 of an embodiment of the present technology 10. Surface-emitting laser according to Example 10 of an embodiment of the present technology 11. Surface-emitting laser according to Example 11 of an embodiment of the present technology 12. Surface-emitting laser according to Example 12 of an embodiment of the present technology 13. Variations in the interior of the surface-emitting laser according to an embodiment of the present technology 14. Light source device comprising a surface-emitting laser according to Example 1 of an embodiment of the present technology 15. Light source device comprising a surface-emitting laser according to Example 10 of an embodiment of the present technology 16. Other variations of the present technique 17. Example of application to an electronic device 18. Example of the application of a surface-emitting laser to a distance measuring device 19. Example of installing a distance measuring device on a moving body <0. Introduction

[0025] Vertical resonator surface-emitting lasers (VCSELs) fundamentally require contact between an anode and a cathode electrode located on either side of an active layer, necessitating mesa formation. However, mesa formation has presented challenges, such as reduced spacing, increased fabrication complexity, and the need to protect the mesa perimeter for reliability. Another issue is the increasing series resistance of the surface-emitting laser, which varies depending on the electrode arrangement.

[0026] Accordingly, after careful investigations, the inventors have developed the surface-emitting laser according to the present technique as a surface-emitting laser capable of reducing series resistance without the need for the formation of a mesa.

[0027] Several examples of surface-emitting lasers according to an embodiment of the present technology are described in detail below. <1. Surface-emitting laser according to Example 1 of an embodiment of the present technology

[0028] Fig. Figure 1A is a cross-sectional view of a surface-emitting laser 10 according to Example 1 of an embodiment of the present technology. Fig. Figure 1B is a top view of the surface-emitting laser 10. Fig. 1A is a cross-sectional view along line AA of Fig. 1B. Fig. Figure 2 is a top view of a first reflector 102 and a cathode electrode 109a of the surface-emitting laser 10. For the sake of simplicity, the upper and lower parts are shown in cross-sectional view below. Fig. 1 and the like are described as the "top" and the "bottom". <<Konfiguration des oberflächenemittierenden Lasers> >[Overall configuration]

[0029] The surface-emitting laser 10 according to Example 1 is a vertical resonator surface-emitting laser (VCSEL). As in Fig. 1A and Fig. As illustrated in Figure 1B, the surface-emitting laser 10 comprises a first structure ST1, which includes the first reflector 102, a second structure ST2, which includes a second reflector 106, and an active layer 104, which is arranged between the first and second structures ST1 and ST2. A light-emitting unit (a resonator) is configured to include the first and second reflectors 102 and 106 and the active layer 104. The surface-emitting laser 10 is driven, for example, by a laser driver.

[0030] The first structure ST1 further comprises a substrate 101, which is arranged on the side of the first reflector 102 opposite the side on which the active layer 104 is arranged, and a first cladding layer 103, which is arranged between the first reflector 102 and the active layer 104. The cathode electrode 109a is provided within the first structure ST1.

[0031] An ion implantation area IIA (a high-resistance area; the dark gray area in Fig. 1A and the like) is configured in the first structure ST1 and the second structure ST2 as a current confinement region, which has an annular portion for defining a light-emitting region IIAa, which defines a light-emitting region LA of the active layer 104. The portion defining a light-emitting region IIAa is, for example, a circular, polygonal, or similar frame shape in plan view. The thickness of the ion implantation region IIA, as the current confinement region, is, for example, 10 to 8000 nm. For example, H+, B+, and the like can be specified as examples of the ion species in the ion implantation region IIA. Here, the ion implantation region IIA is configured in the upper part of a boundary region of the first structure ST1 and in its entirety, in the thickness direction, a boundary region of the second structure ST2, but the configuration is not limited to this.The ion implantation region IIA can be formed only in a portion (e.g., an upper portion) in the thickness direction of the boundary region of the second structure ST2, or the ion implantation region IIA can also be formed in a lower portion of the boundary region of the first structure ST1. In addition to suppressing current flow between adjacent surface-emitting lasers 10, the ion implantation region IIA serves as a current confinement region for the surface-emitting lasers 10 when, for example, the surface-emitting lasers 10 are arranged in an array.

[0032] The second structure ST2 further comprises a second cladding layer 105, which is arranged between the active layer 104 and the second reflector 106. An anode electrode 108 is provided in an area which, in plan view, is surrounded by the part for defining a light-emitting region IIAa, on the surface of the second structure ST2 opposite the side of the active layer 104 (for example, the upper surface of the second reflector 106).

[0033] For example, the surface-emitting laser 10 emits laser light from the side of the back surface (bottom surface) of the substrate 101. In other words, the surface-emitting laser 10 is, for example, a back-emitting VCSEL. [First structure](substrate)

[0034] Substrate 101 is formed, for example, from a semiconductor substrate (e.g., a GaAs substrate) of a first conductivity type (e.g., n-type). A thin film, which does not reflect or almost does not reflect light emitted by the surface-emitting laser 10 (light with an oscillation wavelength λ from the surface-emitting laser 10), is formed on the rear (bottom) surface of substrate 101 as an AR coating film. This thin film generally consists of a material that absorbs almost no light with the oscillation wavelength λ. (First mantle layer)

[0035] The first cladding layer 103, for example, is formed from a compound semiconductor based on AlGaAs of the first conductivity type (e.g. n-type). (First reflector, interior and cathode electrode)

[0036] The first reflector 102, for example, is a semiconductor multilayer reflector. This multilayer reflector is also known as a distributed Bragg reflector (DBR). The semiconductor multilayer reflector, which is a type of multilayer reflector (distributed Bragg reflector), exhibits low light absorption and high reflectivity and is either conductive, semi-insulating, or insulating. Specifically, the first reflector 102 is, for example, a semiconductor multilayer reflector of the first conductivity type (e.g., n-type) and has a structure in which a variety of types (e.g., two types) of semiconductor layers, each with different refractive indices, are layered alternately with an optical thickness of 1 / 4 of the oscillation wavelength. Each refractive index layer of the first reflector 102 is formed from a compound semiconductor based on AlGaAs of the first conductivity type (e.g. n-type).The first reflector 102 is positioned to have a slightly lower reflectivity than the second reflector 106. The first reflector 102 is also referred to as the lower reflector.

[0037] As an example, in the first structure ST1, a first component part, comprising a first part 102-1, which is a lower part of the first reflector 102 (hereinafter also referred to as the "lower part of the first reflector"), and the substrate 101, and a second component part, comprising a second part 102-2, which is an upper part of the first reflector 102 (hereinafter also referred to as the "upper part of the first reflector"), and the first cladding layer 103, are connected to each other such that the first and second parts 102-1 and 102-2 face each other. The reference symbol BI in Fig. 1A indicates the interface between the first and second component parts.

[0038] As an example, the first structure ST1 has an interior IS, and the cathode electrode 109a is provided within the interior IS. Specifically, the cathode electrode 109a is provided in contact with the lower surface of the first cladding layer 103 (the semiconductor layer) (that is, the surface on the side of the first reflector 102), which is, for example, a wall surface on the side of the active layer 104 of the interior IS. Although it is provided in a part of the interior IS as an example, the cathode electrode 109a can be provided within the entire interior IS.

[0039] As an example, the interior IS is defined by: the first cladding layer 103; and the first and second parts 102-1 and 102-2 of the first reflector 102. In particular, a connecting surface JS1 of the first component part, which comprises the lower part of the first reflector, with the second component part, which comprises the upper part of the first reflector, includes a wall surface on the side of the interior IS opposite the side on which the active layer 104 is located. The interior IS is defined by: the connecting surface JS1; and a recess R, which has an open end at a connecting surface JS2 of the second component part, which comprises the upper part of the first reflector, with the first component part, which comprises the lower part of the first reflector, and which assumes as a base surface the surface of the first cladding layer 103 on the side opposite the side on which the active layer 104 is located (that is, the lower surface).

[0040] As an example, the first part 102-1 of the first reflector 102 (the lower part of the first reflector) has a wide, flat shape. As an example, the second part 102-2 of the first reflector 102 (the upper part of the first reflector) has an essentially cylindrical central part 102a (transmissive part) corresponding to the central part of the light-emitting area LA, and a square, frame-shaped circumferential part 102c surrounding the central part 102a, with the interior IS located between them (see Fig. 2) The diameter of the central part 102a is, for example, 0.5 to 300 µm. The second part 102-2 (the upper part of the first reflector) is, for example, 1 to 2000 nm thick. It should be noted that the circumferential part 102c is not limited to a square frame shape and can, for example, have a circular frame shape, an elliptical frame shape, a polygonal frame shape (which is not a square frame shape), or the like.

[0041] As an example, the interior IS has a circumferential part ISa in which the cathode electrode 109a is arranged around the central part 102a of the upper part of the first reflector in the first structure ST1 (and in particular in the second component part that includes the upper part of the first reflector) (see Fig. 2) The circumferential part ISa has a lower refractive index than the central part 102a, which makes it possible to confine light. The shape of the circumferential part ISa can be any shape surrounding the central part 102a. As an example, at least the circumferential part ISa of the interior IS is preferably an insulating layer consisting of air, SiO2, SiN, SiON, AlN, or the like, or a layer having a different refractive index than the central part 102a, such as a conductive layer consisting of a metal or the like. Here, for example, the interior IS is an insulating layer consisting of air. Current confinement is also possible if at least the circumferential part ISa of the interior IS consists of an insulating layer.

[0042] The cathode electrode 109a, for example, consists of a first contact metal. As an example, the cathode electrode 109a comprises a plurality of (e.g., two) electrode parts 109a1 and 109a2, which are arranged at different positions in the circumferential part ISa (see Fig. 2) The first contact metal, which serves as the cathode electrode 109a, has a layered structure in which, for example, a Ti layer, a Pt layer, and an Au layer are layered in that order from the side of the first cladding layer 103 (e.g., a three-layer structure). The Ti layer is, for example, 2 nm to 100 nm thick. The Pt layer is, for example, 2 nm to 300 nm thick. The Au layer is, for example, 100 nm to 500 nm thick. The cathode electrode 109a is, for example, electrically connected to the cathode (negative terminal) of a laser driver. (Wiring)

[0043] The surface-emitting laser 10 further comprises a wiring W provided to penetrate the second structure ST2, the active layer 104, and a portion between the interior IS of the first structure ST1 and the active layer 104 (e.g., the first cladding layer 103), and which is connected at one end to the cathode electrode 109a. As an example, the wiring W consists of a first terminal metal 109b and a first plating metal 109c. As an example, the wiring W extends along a direction in which a via V extends (e.g., in the layering direction) within the via V that spans the second structure ST2, the active layer 104, and a portion between the interior IS of the first structure ST1 and the active layer 104 (e.g., the first cladding layer 103).the first cladding layer 103), with one end connected to the cathode electrode 109a and the other end provided on the upper surface of the second reflector 106 (the side opposite the side on which the active layer 104 is located). A cathode wiring system 109 consists of the wiring W (the first contact surface metal 109b and the first plating metal 109c) and the cathode electrode 109a (the first contact metal). The first contact surface metal 109b has a layered structure in which, for example, a Ti layer, a Pt layer, and an Au layer are layered in that order from the side of the first contact metal and the side surface of the via V (e.g., a three-layer structure). The Ti layer is, for example, 2 nm to 100 nm thick. The Pt layer is, for example, 2 nm to 300 nm thick. The Au layer, for example, is 100 nm to 1000 nm thick.The first plating metal 109c, for example, consists of an Au layer. This Au layer is, for example, 1000 nm to 5000 nm thick. If, for example, the first terminal metal 109b can be prevented from breaking by making it thicker, and if the resistance can be reduced, then the first plating metal 109c does not need to be provided. It should be noted that, for forming the wiring W in a through-hole configuration, a trench can be provided instead of a via V.

[0044] The penetrating portion of the wiring W, i.e., the portion of the wiring W that penetrates the second structure ST2, the active layer 104, and the area between the interior IS of the first structure ST1 and the active layer 104 (e.g., the first cladding layer 103), is surrounded by the ion implantation region IIA, which is a region of high resistance. The other end of the wiring W (the portion provided on the upper surface of the second reflector 106) can be an external connection terminal on the cathode side (e.g., the connection region of a flip-chip connection). [Active layer]

[0045] Active layer 104 features a quantum well structure, which includes, for example, a barrier layer consisting of a GaAs-based compound semiconductor (e.g., InGaAs) and a quantum well layer. The quantum well structure can be a simple quantum well (QW) structure or a multiple quantum well (MQW) structure. For example, in active layer 104, the region surrounded in the top view by the part defining a light-emitting region IIAa of the ion implantation region IIA is the light-emitting region LA. Active layer 104 can feature multiple QW structures or multiple MQW structures laminated by tunnel junctions. [Second structure](Second mantle layer)

[0046] The second cladding layer 105, for example, is formed from a compound semiconductor based on AlGaAs of a second conductivity type (e.g. p-type). (Second reflector)

[0047] The second reflector 106, for example, is a semiconductor multilayer reflector. Specifically, the second reflector 106 is a semiconductor multilayer reflector of the second conductivity type (e.g., p-type) and has a structure in which a variety of types (e.g., two types) of semiconductor layers, each with different refractive indices, are layered alternately with an optical thickness of 1 / 4 of the oscillation wavelength. Each refractive index layer of the second reflector 106 is formed from a compound semiconductor based on AlGaAs of the second conductivity type (e.g., p-type). The second reflector 106 is also referred to as the upper reflector. (Anode electrode)

[0048] As an example, the anode electrode 108 has a layered structure in which a second contact metal 108a, a second terminal metal 108b, and a second plating metal 108c are layered in that order from the side of the second reflector 106 (e.g., a three-layer structure). The anode electrode 108 can be an external connection terminal on the anode side (e.g., the connection area of ​​a flip-chip connection). Here, the anode electrode 108 has a substantially circular shape in plan view, but it can also have a different shape in plan view, such as a substantially oval shape, a substantially polygonal shape, or the like. The anode electrode 108 is, for example, electrically connected to the anode (positive terminal) of the laser driver.

[0049] As an example, the second contact metal 108a is in contact with a surface on the side of the second reflector 106 opposite the side on which the active layer 104 is located (the upper surface). The second contact metal 108a has a layered structure in which, for example, a Ti layer, a Pt layer, and an Au layer are layered in that order by the second reflector 106 (e.g., a three-layer structure). The Ti layer is, for example, 2 nm to 100 nm thick. The Pt layer is, for example, 2 nm to 300 nm thick. The Au layer is, for example, 100 nm to 500 nm thick.

[0050] The second contact surface metal 108b has a layered structure in which, for example, a Ti layer, a Pt layer, and an Au layer are layered in that order on top of the second contact metal 108a (e.g., a three-layer structure). The Ti layer is, for example, 2 nm to 100 nm thick. The Pt layer is, for example, 2 nm to 300 nm thick. The Au layer is, for example, 100 nm to 1000 nm thick.

[0051] The second plating metal 108c consists, for example, of an Au layer. The Au layer is, for example, 1000 nm to 5000 nm thick. If, for example, the fracture of the second terminal metal 108b can be prevented by forming the second terminal metal 108b thick, and if the resistance can be reduced, the second plating metal 108c does not need to be provided. <<Operationen des oberflächenemittierenden Lasers>

[0052] The operations of the surface-emitting laser 10 are briefly described below. In the surface-emitting laser 10, for example, current supplied from the anode side of the laser driver and flowing from the anode electrode 108 is injected into the active layer 104 through the second reflector 106 and the second cladding layer 105 in that order, while being enclosed by the ion implantation region IIA. At this point, the active layer 104 emits light, and if the light moves back and forth between the first and second reflectors 102 and 106, while being amplified by the active layer 104 and being enclosed on the central part 102a of the first reflector 102, and oscillation conditions are met, the light is emitted as laser light from the rear surface of the substrate 101.The current flowing through the active layer 104 flows through the first cladding layer 103 to the cathode electrode 109a and flows, for example, from the cathode electrode 109a to the cathode side of the laser driver.

[0053] Method for manufacturing a surface-emitting laser A method for manufacturing the surface-emitting laser 10 is described below with reference to the flowchart in Fig. 3 and the like are described. Here, for example, a plurality of surface-emitting lasers 10 are simultaneously fabricated on a single wafer, which is the substrate 101, by a semiconductor fabrication process using a semiconductor fabrication device. The integrated plurality of surface-emitting lasers 10 are then separated from one another to obtain the plurality of surface-emitting lasers 10 in chip form.

[0054] In the first step, step S1, the first and second layer bodies L1 and L2 are produced (see Fig. 4A and Fig. 4B). The first part 102-1 of the first reflector 102 is deposited on the substrate 101, for example by metal-organic chemical vapor deposition (MOCVD) (e.g., epitaxially grown at a growth temperature of 605°C), to produce the first layer body L1. The second reflector 106, the second cladding layer 105, the active layer 104, the first cladding layer 103, and the second part 102-2 of the first reflector 102 are then deposited on a growth substrate GS (e.g., a GaAs substrate) in this order, for example by metal-organic chemical vapor deposition (MOCVD) (e.g., epitaxially grown at a growth temperature of 605°C), to produce the second layer body L2.In MOCVD, for example, trimethylgallium ((CH3)3Ga) is used as the source gas for gallium, trimethylaluminium ((CH3)3Al) as the source gas for aluminum, trimethylindium ((CH3)3In) as the source gas for indium, and trimethylhydrogen ((CH3)3As) as the source gas for arsenic. Monosilane (SiH4) is used as the source gas for silicon, and carbon tetrabromide (CBr4) is used as the source gas for carbon.

[0055] In the next step, step S2, the recess R is formed in the second layer body L2 (see Fig. 5A). In particular, a photoresist pattern with an opening at the location of the second layer L2 where the recess R is to be formed is produced by photolithography, and the photoresist pattern is used as a mask to etch the second part 102-2 of the first reflector 102, for example by reactive ion etching (RIE etching) or wet etching, forming the recess R around the middle part 102a of the upper part of the first reflector. The etching is carried out to a depth that exposes the first cladding layer 103. The photoresist pattern is then removed.

[0056] In step S3, the ion implantation area IIA is formed in the second layer body L2 (see Fig. 5B). In particular, a photoresist pattern covering an area (a central area) of the second layer body L2 adjacent to the area where the ion implantation area IIA is to be formed (a marginal area) is formed by photolithography, and ion implantation is performed from the side of the second part 102-2 using the photoresist pattern as a mask. At this time, the ions are implanted to a depth that reaches at least the growth substrate GS (until the lower surface of the second reflector 106 in the Fig. (the condition specified in 5B is reached). It should be noted that ion implantation can also be performed on the first part 102-1 of the first reflector 102 of the first layer body L1 to form the ion implantation area IIA. If ion implantation is performed from the first part 102-1 or from the second part 102-2 and the injection is not deep enough to reach the growth substrate GS, ion implantation can again be performed from the upper surface of the second reflector 106 in the area specified in Fig. The procedure is carried out in the condition specified in 7A, for example after the growth substrate GS has been removed (step S6).

[0057] In the next step, step S4, the first contact metal is formed as the cathode electrode 109a (see Fig. 6A). In particular, the plurality of electrode parts 109a1 and 109a2 of the cathode electrode 109a is formed on the base surface of the recess R in the second layer body L2 (the surface of the first cladding layer 103 opposite the side on which the active layer 104 is arranged), for example by lifting (see Fig. 2) The first contact metal is deposited, for example, by vacuum deposition, sputtering or the like.

[0058] In the next step, step S5, the first and second layer bodies L1 and L2 are joined (see Fig. 6B). In particular, the first part 102-1 of the first reflector 102 of the first layer body L1 and the second part 102-2 of the first reflector 102 of the second layer body L2 are joined together, facing each other. This completes the first reflector 102. In the following, the result of joining the first and second layer bodies L1 and L2 is simply referred to as the “layer body”.

[0059] In the next step, step S6, the growth substrate GS is removed from the second layer body L2 (see Fig. 7A). In particular, after the growth substrate GS has been polished and thinned, the thin-film portion is removed by wet etching. This exposes the second reflector 106.

[0060] In the next step, step S7, the second contact metal 108a is formed (see Fig. 7B). In particular, the second contact metal 108a is formed on the exposed second reflector 106 of the layer body, for example by lifting. The second contact metal 108a is deposited, for example, by vacuum deposition, sputtering, or the like.

[0061] In the next step, step S8, the via V is formed (see Fig. 8A). In particular, a photoresist pattern with an opening is formed at the location of the layer body where the via V is to be formed by photolithography, and using the photoresist pattern as a mask, the layer body is etched, for example by RIE etching, to form the via V. The etching is carried out at this point to a depth that exposes the first contact metal as the cathode electrode 109a.

[0062] In the next step, step S9, the first and second connection surface metals 109b and 108b are formed (see Fig. 8B). In particular, the first contact surface metal 109b is formed on the first contact metal, the side surfaces of the via V and the second reflector 106, and the second contact surface metal 108b is formed, for example, by lifting on the second contact metal 108a. The first and the second contact surface metals 109b and 108b are deposited, for example, by vacuum deposition, sputtering or the like.

[0063] In the last step, step S10, the first and second plating metals 109c and 108c are formed (see Fig. 9) In particular, the first cladding metal 109c is formed on the first contact surface metal 109b, and the second cladding metal 108c is formed, for example, by cladding on the second contact surface metal 108b. <<Effekte des oberflächenemittierenden Lasers> >

[0064] The effects of the surface-emitting laser 10 are described below. The surface-emitting laser 10 according to Example 1 of an embodiment of the present technology comprises the first structure ST1, which includes the first reflector 102, the second structure ST2, which includes the second reflector 106, and the active layer 104, which is arranged between the first and second structures ST1 and ST2, and the cathode electrode 109a is provided within the first structure ST1. According to the surface-emitting laser 10, the cathode electrode 109a is provided within the first structure ST1, and thus a surface-emitting laser can be provided that is capable of reducing series resistance without the need for the formation of a mesa.

[0065] On the other hand, with the surface-emitting laser disclosed in PTL 1, for example, a first electrode is provided on a rear surface of a substrate and a second electrode is provided on a front surface of a mesa-shaped upper reflector. Therefore, it was necessary to form a mesa, and there was also room for improvement in reducing series resistance.

[0066] The first structure ST1 has the interior IS, and the cathode electrode 109a is provided within the interior IS. This makes it possible to accommodate the cathode electrode 109a within the interior IS.

[0067] The cathode electrode 109a is in contact with a wall surface of the interior IS. This makes it possible to electrically connect the cathode electrode 109a to the first structure ST1.

[0068] The cathode electrode 109a is in contact with a wall surface of the interior IS on the side of the active layer 104. This makes it possible to further reduce the series resistance.

[0069] The ion implantation region IIA is configured in the first structure ST1 and / or the second structure as a current confinement region, which has at least one annular part for defining a light-emitting region IIAa that defines the light-emitting region LA of the active layer 104. The interior IS has a circumferential part ISa in which the cathode electrode 109a is arranged around the part of the first structure ST1 that corresponds to the central part of the light-emitting region LA (the central part 102a of the second part 102-2). This allows the current confinement diameter of the current confinement region to be defined by the circumferential part ISa. Furthermore, a light confinement effect can also be achieved due to a difference in the refractive indices of the central part 102a and the circumferential part ISa.

[0070] The cathode electrode 109a can comprise multiple electrode parts 109a1 and 109a2, arranged at different positions in the circumferential part ISa. In this case, the area of ​​the cathode electrode 109a can be increased, and the resistance of the cathode electrode 109a can be decreased.

[0071] The wiring W, which is provided to penetrate the second structure ST2, the active layer 104, and a portion between the interior IS of the first structure ST1 and the active layer 104, and which is connected at one end to the cathode electrode 109a, is further provided. This allows the current flowing into the cathode electrode 109a to be conducted through the wiring W to the side opposite the active layer 104 of the second structure ST2.

[0072] The penetrating part of the wiring W is surrounded by the ion implantation region IIA, which is a region of high resistance. This makes it possible to suppress the current flow between: the second structure ST2 and the active layer 104; and the wiring W.

[0073] The other end of the wiring W is located on a surface opposite the surface of the second structure ST2, on which the active layer 104 is located. This allows the other end to be used as an external connection terminal.

[0074] A material with a low refractive index can be provided in the region of the interior IS around the cathode electrode 109a. In this case, a light inclusion effect based on the refractive index of the low refractive index material can be achieved.

[0075] In the first structure ST1, the first component part, which includes at least part of the first reflector 102 (the lower part of the first reflector), and the second component part, which includes the upper part of the first reflector, are superimposed and connected. The connecting surface JS1, which is the connection surface of the first component part with the second component part, includes a wall surface on the side of the interior IS opposite the side on which the active layer 104 is located. As a result, the interior IS can be formed by creating the recess R on the side of the upper part of the first reflector of the first structure ST1 and covering the recess with the connecting surface JS1, thus easily forming the interior IS.

[0076] The interior IS is defined by the recess R provided in the connection surface JS2, which is the connection surface of the second component part with the first component part, and the connection surface JS1. This simplifies the configuration of the interior IS.

[0077] The first structure ST1 can comprise the first cladding layer 103 as a semiconductor layer, which has a wall surface on the side of the active layer 104 of the interior IS. This allows current to flow efficiently through the active layer 104 to the cathode electrode 109a.

[0078] The anode electrode 108 can be positioned in an area surrounded in plan view by the part defining a light-emitting region IIAa, on the surface of the second structure ST2 opposite the side of the active layer. This allows current to flow efficiently through the active layer 104.

[0079] Furthermore, VCSELs are used in a wide range of fields, such as direct retinal imaging devices and facial recognition sensors, but there is a need for even higher efficiency and high yields during fabrication. To achieve highly efficient VCSELs with good yields, it is necessary to fabricate them with an inclusion diameter in the inclusion structure that confines at least light with high accuracy and good control, in addition to current and light, and to further simplify the fabrication process. Currently, AlGaAs-based VCSELs primarily use an oxidation inclusion layer that converts AlAs to AlOx via steam oxidation. However, a problem exists in that the rate of steam oxidation varies from batch to batch across the wafer surface, which degrades the yield.Additionally, it is essential to ensure that the anode and cathode electrodes are in contact with the active layer between them, which generally requires the formation of a mesa. However, a problem arises in that the manufacturing process becomes more difficult as the mesa narrows, necessitating measures to protect the mesa's perimeter to improve reliability, and similar factors complicate the process.

[0080] In the surface-emitting laser 10, the cathode electrode 109a is provided internally, eliminating the need to form a mesa and simplifying the fabrication process. Furthermore, the surface-emitting laser 10 enables the fabrication of an inclusion structure that, in addition to light and current, confines at least light with good controllability, thus making it possible to realize ultra-narrow-spaced VCSELs that were previously difficult to produce. <2. Surface-emitting laser according to Example 2 of an embodiment of the present technology

[0081] Fig. Figure 10A is a cross-sectional view of a surface-emitting laser 20 according to Example 2 of an embodiment of the present technology. Fig. Figure 10B is a top view of the surface-emitting laser 20. Fig. 10A is a cross-sectional view along line AA of Fig. 10B. <<Konfiguration des oberflächenemittierenden Lasers> >

[0082] As in Fig. 10A and Fig. As shown in Figure 10B, the surface-emitting laser 20 according to Example 2 generally has the same configuration as the surface-emitting laser 10 according to Example 1, except that the anode electrode 108 has a surrounding region 108A, which in plan view surrounds the center of the light-emitting region LA of the active layer 104, and an external interconnection terminal 108B. The surface-emitting laser 20 is a front-surface surface-emitting laser in which the second reflector 106 is the emitting-side reflector and the inside of the surrounding region 108A of the anode electrode 108 is an emission aperture. The external interconnection terminal 108B can be an external interconnection terminal on the anode side (e.g., the interconnection region of a flip-chip connection). <<Operationen des oberflächenemittierenden Lasers>

[0083] In addition to emitting light from the second reflector 106, the surface-emitting laser 20 performs the same operations as the surface-emitting laser 10 according to Example 1. <<Verfahren zum Herstellen eines oberflächenemittierenden Lasers>

[0084] The surface-emitting laser 20 can generally be manufactured by the same method as the method for manufacturing the surface-emitting laser 10 according to Example 1. <<Effekte des oberflächenemittierenden Lasers> >

[0085] According to the surface-emitting laser 20, the same effects can be achieved as with the surface-emitting laser 10 according to Example 1. <3. Surface-emitting laser according to Example 3 of an embodiment of the present technology

[0086] Fig. Figure 11 is a cross-sectional view of a surface-emitting laser 30 according to Example 3 of an embodiment of the present technology. <<Konfiguration des oberflächenemittierenden Lasers> >

[0087] As in Fig. As shown in Figure 11, the surface-emitting laser 30 according to Example 3 generally has the same configuration as the surface-emitting laser 10 according to Example 1, except that a connecting interface BI is present between the first reflector 102 and the first cladding layer 103, i.e. the first reflector 102 and the first cladding layer 103 are connected.

[0088] In the surface-emitting laser 30, the interior IS is defined by the recess R, which is provided on the side of the active layer 104 of the first reflector 102 (the upper surface) and on the surface on the side of the first cladding layer 103 opposite the side on which the active layer 104 is located (the lower surface). In the surface-emitting laser 30, the cathode electrode 109a is provided on the lower surface of the first cladding layer 103 (the surface opposite the side on which the active layer 104 is located). The thickness of the cathode electrode 109a is preferably not greater than the depth of the recess R. <<Operationen des oberflächenemittierenden Lasers>

[0089] The surface-emitting laser 30 performs the same operations as the surface-emitting laser 10 according to Example 1. <<Verfahren zum Herstellen eines oberflächenemittierenden Lasers>

[0090] A method for manufacturing the surface-emitting laser 30 is described below with reference to the flowchart in Fig. 12 and the like are described. Here, for example, a plurality of surface-emitting lasers 30 are simultaneously fabricated on a single wafer, which is the substrate 101, by a semiconductor fabrication process using a semiconductor fabrication device. The integrated plurality of surface-emitting lasers 30 are then separated from one another to obtain the plurality of surface-emitting lasers 30 in chip form.

[0091] In the first step, step S21, the first and second layer bodies L1 and L2 are produced (see Fig. 13A and Fig. 13B). The first reflector 102 is deposited on the substrate 101, for example by metal-organic chemical vapor deposition (MOCVD) (e.g., epitaxially grown at a growth temperature of 605 °C), to produce the first layer L1. The second reflector 106, the second cladding layer 105, the active layer 104, and the first cladding layer 103 are then deposited on a growth substrate GS (e.g., a GaAs substrate) in this order, for example by metal-organic chemical vapor deposition (MOCVD) (e.g., epitaxially grown at a growth temperature of 605 °C), to produce the second layer L2. For example, when performing MOCVD, trimethylgallium ((CH3)3Ga) is used as the source gas for gallium, trimethylaluminium ((CH3)3Al) is used as the source gas for aluminium, trimethylindium ((CH3)3In) is used as the source gas for indium, and trimethylhydrogen ((CH3)3As) is used as the source gas for arsenic.For example, monosilane (SiH4) is used as the source gas for silicon and carbon tetrabromide (CBr4) is used as the source gas for carbon.

[0092] In the next step, step S22, the recess R is formed in the first layer body L1 (see Fig. 14A). In particular, a photoresist pattern with an opening at the location of the first layer body L1 (and especially the first reflector 102) where the recess R is to be formed is produced by photolithography, and the photoresist pattern is used as a mask to etch the first reflector 102, for example by reactive ion etching (RIE etching) or wet etching, which forms the recess R around the circumference of the middle part 102a of the first reflector 102. The photoresist pattern is then removed.

[0093] In the next step, step S23, the ion implantation area IIA is formed in the second layer body L2 (see Fig. 14B). In particular, a photoresist pattern covering an area (a central area) of the second layer body L2 adjacent to the area where the ion implantation area IIA is to be formed (a marginal area) is produced by photolithography, and ion implantation is performed from the side of the first mantle layer 103 using the photoresist pattern as a mask. At this time, the ions are implanted to a depth that reaches at least the growth substrate GS. It should be noted that ion implantation can also be performed at the first reflector 102 of the first layer body L1 to form the ion implantation area IIA. If ion implantation is performed from the first reflector 102 or from the first mantle layer 103 and the injection is not deep enough to reach the growth substrate GS, ion implantation can again be performed from the upper surface of the second reflector 106 in the area described in Figure 14B. Fig. The condition specified in 15B is carried out, for example, after the growth substrate GS has been removed (step S26).

[0094] In the next step, step S24, the first contact metal is formed as the cathode electrode 109a (see Fig. 14C). In particular, the cathode electrode 109a is formed at a position on the side surface of the first cladding layer 103 of the second layer body L2, corresponding to the recess R formed in the first layer body L1, for example by delamination. The thickness of the cathode electrode 109a at this point is no greater than the depth of the recess R. The first contact metal, which serves as the cathode electrode 109a, is deposited, for example, by vacuum deposition, sputtering, or the like.

[0095] In the next step, step S25, the first and second layer bodies L1 and L2 are joined (see Fig. 15A). In particular, the first reflector 102 of the first layer body L1 and the first cladding layer 103 of the second layer body L2 are joined together, facing each other. At this point, the joining is carried out in such a way that the cathode electrode 109a is placed within the recess R. Hereinafter, the result of joining the first and second layer bodies L1 and L2 is simply referred to as the “layer body”.

[0096] In the next step, step S26, the growth substrate GS is removed from the second layer body L2 (see Fig. 15B). In particular, after the growth substrate GS has been polished and thinned, the thin-film portion is removed by wet etching. This exposes the second reflector 106.

[0097] In the next step, step S27, the second contact metal 108a is formed (see Fig. 16A). In particular, the second contact metal 108a is formed on the exposed second reflector 106 of the layer body, for example by lifting. The second contact metal 108a is deposited, for example, by vacuum deposition, sputtering, or the like.

[0098] In the next step, step S28, the via V is formed (see Fig. 16B). In particular, a photoresist pattern with an opening is formed at the location of the layer body where the via V is to be formed by photolithography, and using the photoresist pattern as a mask, the layer body is etched, for example by RIE etching, to form the via V. The etching is carried out at this point to a depth that exposes the first contact metal as the cathode electrode 109a (to a depth at which the second reflector 106 is penetrated).

[0099] In the next step, step S29, the first and second contact surface metals 109b and 108b are formed (see Fig. 17A). In particular, the first contact surface metal 109b is formed on the first contact metal, the side surfaces of the via V and the second reflector 106, and the second contact surface metal 108b is formed, for example, by lifting on the second contact metal 108a. The first and the second contact surface metals 109b and 108b are deposited, for example, by vacuum deposition, sputtering or the like.

[0100] In the last step, step S30, the first and second plating metals 109c and 108c are formed (see Fig. 17B). In particular, the first plating metal 109c is formed on the first contact surface metal 109b, and the second plating metal 108c is formed, for example, by plating on the second contact surface metal 108b. <<Effekte des oberflächenemittierenden Lasers> >

[0101] According to the surface-emitting laser 30, the same effects as the surface-emitting laser 10 according to Example 1 can be achieved. <4. Surface-emitting laser according to Example 4 of an embodiment of the present technology

[0102] Fig. Figure 18 is a cross-sectional view of a surface-emitting laser 40 according to Example 4 of an embodiment of the present technology. <<Konfiguration des oberflächenemittierenden Lasers> >

[0103] As in Fig. As shown in Figure 18, the surface-emitting laser 40 according to Example 4 generally has the same configuration as the surface-emitting laser 10 according to Example 1, except that the first reflector 102 and the first cladding layer 103 are connected, and the interior IS is defined by the recess R formed in the interface between the first cladding layer 103 and the first reflector 102, and in the interface between the first reflector 102 and the first cladding layer 103. In the surface-emitting laser 40, the recess R is formed around a central part 103a of the first cladding layer 103. <<Operationen des oberflächenemittierenden Lasers> >

[0104] The surface-emitting laser 40 performs the same operations as the surface-emitting laser 10 according to Example 1. <<Verfahren zum Herstellen eines oberflächenemittierenden Lasers> >

[0105] The surface-emitting laser 40 can be manufactured by a manufacturing process based on the process for manufacturing the surface-emitting laser 10 according to Example 1. <<Effekte eines oberflächenemittierenden Lasers> >

[0106] According to the surface-emitting laser 40, the same effects as the surface-emitting laser 10 according to Example 1 can be achieved. <5. Surface-emitting laser according to Example 5 of an embodiment of the present technology

[0107] Fig. Figure 19 is a cross-sectional view of a surface-emitting laser 50 according to Example 5 of an embodiment of the present technology. <<Konfiguration des oberflächenemittierenden Lasers> >

[0108] As in Fig. As shown in Figure 19, the surface-emitting laser 50 according to Example 5 generally has the same configuration as the surface-emitting laser 30 according to Example 3, except that the interface BI is located within the first cladding layer 103.

[0109] In the surface-emitting laser 50, in the first structure ST1, the first component part, comprising the first reflector 102 and a first part 103-1, which is a lower part of the first cladding layer 103 (hereinafter also referred to as "lower part of the first cladding layer"), and the second component part, comprising a second part 103-2, which is an upper part of the first cladding layer 103 (hereinafter also referred to as "upper part of the second cladding layer"), are connected to each other, with the first and second parts 103-1 and 103-2 facing each other.The interior IS is defined by: the recess R, which has an open end at the interface between the first component part, which comprises the lower part of the first cladding layer, and the second component part, which comprises the upper part of the second cladding layer, and which adopts the side surface of the active layer 104 of the first reflector 102 (the upper surface) as a base surface; and the interface of the second component part, which comprises an upper part of the first cladding layer, with the first component part, which comprises the lower part of the first cladding layer. In the surface-emitting laser 50, the recess R is formed around a central part 103a of the first cladding layer 103. In the surface-emitting laser 50, the cathode electrode 109a is provided on the lower surface of the upper part of the first cladding layer (the surface opposite the side on which the active layer 104 is located).The thickness of the cathode electrode 109a is preferably not greater than the depth of the recess R. <<Operationen des oberflächenemittierenden Lasers> >

[0110] The surface-emitting laser 50 performs the same operations as the surface-emitting laser 10 according to Example 1. <<Verfahren zum Herstellen eines oberflächenemittierenden Lasers> >

[0111] The surface-emitting laser 50 can be manufactured by a manufacturing process based on the process for manufacturing the surface-emitting laser 30 according to Example 3. <<Effekte des oberflächenemittierenden Lasers> >

[0112] According to the surface-emitting laser 50, the same effects can be achieved as with the surface-emitting laser 30 according to Example 3. <6. Surface-emitting laser according to Example 6 of an embodiment of the present technology

[0113] Fig. Figure 20 is a cross-sectional view of a surface-emitting laser 60 according to Example 6 of an embodiment of the present technology. <<Konfiguration des oberflächenemittierenden Lasers> >

[0114] As in Fig. As shown in Figure 20, the surface-emitting laser 60 according to Example 6 generally has the same configuration as the surface-emitting laser 10 according to Example 1, except that the interior IS is defined by: the recess R provided in the connecting surface of the second component part, which includes the upper part of the first reflector, with the first component part, which includes the lower part of the first reflector; and the connecting surface of the first component part, which includes the lower part of the first reflector, and of the second component part, which includes the upper part of the first reflector. <<Operationen des oberflächenemittierenden Lasers> >

[0115] The surface-emitting laser 60 performs the same operations as the surface-emitting laser 10 according to Example 1. <<Verfahren zum Herstellen eines oberflächenemittierenden Lasers> >

[0116] The surface-emitting laser 60 can be manufactured by a manufacturing process based on the process for manufacturing the surface-emitting laser 10 according to Example 1. <<Effekte eines oberflächenemittierenden Lasers> >

[0117] According to the surface-emitting laser 60, the same effects as the surface-emitting laser 10 according to Example 1 can be achieved. <7. Surface-emitting laser according to Example 7 of an embodiment of the present technology

[0118] Fig. Figure 21 is a cross-sectional view of a surface-emitting laser 70 according to Example 7 of an embodiment of the present technology. <<Konfiguration des oberflächenemittierenden Lasers> >

[0119] As in Fig. As shown in Figure 21, the surface-emitting laser 70 according to Example 7 generally has the same configuration as the surface-emitting laser 30 according to Example 3, except that the interior IS is defined by: the recess R provided in the junction of the first component part, which comprises the lower part of the first reflector, with the second component part, which comprises the upper part of the first reflector; and the junction of the second component part, which comprises the upper part of the first reflector, and the first component part, which comprises the lower part of the first reflector. In the surface-emitting laser 70, the cathode electrode 109a is provided on the lower surface of the upper part of the first reflector (the surface opposite the side on which the active layer 104 is arranged). The thickness of the cathode electrode 109a is preferably not greater than the depth of the recess R. <<Operationen des oberflächenemittierenden Lasers> >

[0120] The surface-emitting laser 70 performs the same operations as the surface-emitting laser 10 according to Example 1. <<Verfahren zum Herstellen eines oberflächenemittierenden Lasers> >

[0121] The surface-emitting laser 70 can be manufactured by a manufacturing process based on the process for manufacturing the surface-emitting laser 30 according to Example 3. <<Effekte des oberflächenemittierenden Lasers> >

[0122] According to the surface-emitting laser 70, the same effects can be achieved as with the surface-emitting laser 30 according to Example 3. <8. Surface-emitting laser according to Example 8 of an embodiment of the present technology

[0123] Fig. Figure 22 is a cross-sectional view of a surface-emitting laser 80 according to Example 8 of an embodiment of the present technology. <<Konfiguration des oberflächenemittierenden Lasers> >

[0124] As in Fig. As shown in Figure 22, the surface-emitting laser 80 according to Example 8 generally has the same configuration as the surface-emitting laser 10 according to Example 1, except that it has a double intracavity structure.

[0125] In the surface-emitting laser 80, the second structure ST2 has a mesa M that includes at least a part of the second reflector 106 (e.g., a part excluding the lower part), and the anode electrode 108 is arranged in a region of the second structure ST2 around the mesa M. <<Operationen des oberflächenemittierenden Lasers> >

[0126] The surface-emitting laser 80 generally performs the same operations as the surface-emitting laser 10 according to Example 1. <<Verfahren zum Herstellen eines oberflächenemittierenden Lasers> >

[0127] The surface-emitting laser 80 can be manufactured by a manufacturing process based on the process for manufacturing the surface-emitting laser 10 according to Example 1. <<Effekte des oberflächenemittierenden Lasers> >

[0128] According to the surface-emitting laser 80, the same effects as the surface-emitting laser 10 according to Example 1 can be achieved, and the series resistance can be further reduced by having the double intracavity structure. <9. Surface-emitting laser according to Example 9 of an embodiment of the present technology

[0129] Fig. Figure 23 is a cross-sectional view of a surface-emitting laser 90 according to Example 9 of an embodiment of the present technology. <<Konfiguration des oberflächenemittierenden Lasers> >

[0130] As in Fig. As shown in Figure 23, the surface-emitting laser 90 according to Example 9 generally has the same configuration as the surface-emitting laser 80 according to Example 8, except that the first reflector 102 and the first cladding layer 103 are connected, and a connecting interface BI is present between the first reflector 102 and the first cladding layer 103.

[0131] In the surface-emitting laser 90, the interior IS is defined by the recess R formed in the interface between the first reflector 102 and the first cladding layer 103, and the interface between the first cladding layer 103 and the first reflector 102. The recess R is formed around the central part 102a of the first reflector 102. In the surface-emitting laser 90, the cathode electrode 109a is provided on the lower surface of the first cladding layer 103 (the surface opposite the side on which the active layer 104 is located). The thickness of the cathode electrode 109a is preferably not greater than the depth of the recess R. <<Operationen des oberflächenemittierenden Lasers> >

[0132] The surface-emitting laser 90 generally performs the same operations as the surface-emitting laser 10 according to Example 1. <<Verfahren zum Herstellen eines oberflächenemittierenden Lasers> >

[0133] The surface-emitting laser 90 can be manufactured by a manufacturing process based on the process for manufacturing the surface-emitting laser 30 according to Example 3. <<Effekte des oberflächenemittierenden Lasers> >

[0134] According to the surface-emitting laser 90, the same effects can be achieved as with the surface-emitting laser 80 according to Example 8. <10. Surface-emitting laser according to Example 10 of an embodiment of the present technology

[0135] Fig. Figure 24A is a cross-sectional view of a surface-emitting laser 100 according to Example 10 of an embodiment of the present technology. Fig. Figure 24B is a diagram illustrating the planar layout of the anode electrode 108 and the cathode electrode 109a of the surface-emitting laser 100. <<Konfiguration des oberflächenemittierenden Lasers> >

[0136] As in Fig. 24A and Fig. As shown in Figure 24B, the surface-emitting laser 100 according to Example 10 generally has the same configuration as the surface-emitting laser 10 according to Example 1, except that a surface-emitting laser array is configured.

[0137] In the surface-emitting laser 100, the ion implantation region IIA, which serves as the current confinement region, has a plurality of ring-shaped parts for defining a light-emitting region, and the interior IS has a plurality of surrounding parts corresponding to the plurality of light-emitting regions. In the surface-emitting laser 100, a plurality of light-emitting regions in the active layer 104 are defined by the plurality of parts for defining a light-emitting region of the ion implantation region IIA.

[0138] The multitude of surrounding parts of the interior IS communicate with each other, and the cathode electrode 109a is provided in each surrounding part. The cathode electrodes 109a provided in the multitude of surrounding parts of the interior IS are electrically connected to each other (see Fig. 24B).

[0139] In the surface-emitting laser 100, a plurality of anode electrodes 108, corresponding to the plurality of cathode electrodes 109a, are provided on the second reflector 106. The plurality of anode electrodes 108 are prevented from being conductive to one another by the ion implantation area IIA. In the surface-emitting laser 100, current can be injected all at once or individually into the light-emitting areas, and light-emitting units comprising the light-emitting areas can be addressed all at once or individually. <<Operationen des oberflächenemittierenden Lasers> >

[0140] In the surface-emitting laser 100, each light-emitting unit generally performs the same operations as the surface-emitting laser 10 according to Example 1. <<Verfahren zum Herstellen eines oberflächenemittierenden Lasers> >

[0141] The surface-emitting laser 100 can be manufactured by a manufacturing process based on the process for manufacturing the surface-emitting laser 10 according to Example 1. <<Effekte eines oberflächenemittierenden Lasers> >

[0142] According to the surface-emitting laser 100, it is possible to provide a small-spaced surface-emitting laser array that does not require the formation of a mesa and can reduce series resistance. <11. Surface-emitting laser according to Example 11 of an embodiment of the present technology

[0143] Fig. Figure 25 is a cross-sectional view of a surface-emitting laser 110 according to Example 11 of an embodiment of the present technology. <<Konfiguration des oberflächenemittierenden Lasers> >

[0144] As in Fig. As shown in Figure 25, the surface-emitting laser 110 according to Example 11 has the same configuration as the surface-emitting laser 10 according to Example 1, except that an insulating film IF is provided instead of the ion implantation area IIA.

[0145] In the surface-emitting laser 110, the insulating film IF is formed on the side surface of the via V and the upper surface of the second reflector 106, and a penetrating part of the wiring W is surrounded by the insulating film IF. The insulating film IF also serves as a current confinement region.

[0146] The insulating film IF consists, for example, of a dielectric such as SiO2, SiN, SiON, or the like. The insulating film IF is, for example, 10 to 300 nm thick. <<Operationen des oberflächenemittierenden Lasers> >

[0147] The surface-emitting laser 110 generally performs the same operations as the surface-emitting laser 10 according to Example 1. <<Verfahren zum Herstellen eines oberflächenemittierenden Lasers> >

[0148] The surface-emitting laser 110 can be manufactured by a manufacturing process based on the process for manufacturing the surface-emitting laser 10 according to Example 1. <<Effekte des oberflächenemittierenden Lasers> >

[0149] According to the surface-emitting laser 110, the same effects can generally be achieved as with the surface-emitting laser 10 according to Example 1. <12. Surface-emitting laser according to Example 12 of an embodiment of the present technology

[0150] Fig. Figure 26 is a cross-sectional view of a surface-emitting laser 120 according to Example 12 of an embodiment of the present technology. <<Konfiguration des oberflächenemittierenden Lasers> >

[0151] As in Fig. As illustrated in Figure 26, the surface-emitting laser 120 according to Example 12 has the same configuration as the surface-emitting laser 10 according to Example 1, except that a low refractive index material LRM is provided over the entire circumference of the cathode electrode 109a in the interior IS.

[0152] The low refractive index material LRM can be a material with a lower refractive index than a semiconductor region surrounded by the low refractive index material LRM, such as SiO2, SiN, SiON, AlN, a metal, or the like. <<Operationen des oberflächenemittierenden Lasers> >

[0153] The surface-emitting laser 120 generally performs the same operations as the surface-emitting laser 10 according to Example 1. <<Verfahren zum Herstellen eines oberflächenemittierenden Lasers> >

[0154] The surface-emitting laser 120 can be manufactured by a manufacturing process based on the process for manufacturing the surface-emitting laser 10 according to Example 1. <<Effekte eines oberflächenemittierenden Lasers> >

[0155] According to the surface-emitting laser 120, the same effects can generally be achieved as with the surface-emitting laser 10 according to Example 1. <13. Variations in the interior of the surface-emitting laser according to an embodiment of the present technology

[0156] The surface-emitting laser according to an embodiment of the present technology can have a shape in which the cross-section of the surrounding part of the interior IS becomes thinner near the center, as for example in Fig. 27A to Fig. 27D shown. In Fig. 27A to Fig. For the sake of simplicity, the cathode electrode 109a is not shown in 27D.

[0157] The example in Fig. 27A has a tapered shape, in which the cross-section of the surrounding part of the interior IS becomes thinner near the center. The example in Fig. 27B has a tapered shape, where the cross-section of the surrounding part of the interior IS becomes thinner near the center, and the low refractive index material LRM is provided in the interior IS. The example in Fig. 27C has a shape in which the cross-section of the surrounding part of the interior IS becomes thinner near the center, with the lower edge exhibiting a curvature. The example in Fig. 27D has a tapered shape in which the cross-section of the surrounding part of the interior IS becomes thinner near the center, with the lower edge having a curvature, and the low refractive index material LRM is provided in the interior IS. <14. Light source device comprising a surface-emitting laser according to Example 1 of an embodiment of the present technology

[0158] Fig. Figure 28 is a cross-sectional view of a light source device 1 comprising the surface-emitting laser 10 according to Example 1 of an embodiment of the present technology.

[0159] As in Fig. As illustrated in Figure 28, the light source device 1 comprises the surface-emitting laser 10 and a laser driver 5, each electrically connected by conductive prongs to the anode electrode 108 and the cathode wiring system 109 of the surface-emitting laser 10. In other words, the surface-emitting laser 10 is connected to the laser driver 5 via a flip-chip (junction-down) connection.

[0160] The anode electrode 108 and the laser driver 5 are electrically connected by a conductive bump BP1. The portion of the wiring W of the cathode wiring system 109, located on the second structure ST2, and the laser driver 5 are electrically connected by a conductive bump BP2. The conductive bump BP1 can be attached to either the anode electrode 108 or the laser driver 5 before the surface-emitting laser 10 and the laser driver 5 are flip-chip connected. The conductive bump BP2 can be attached to either the cathode wiring system 109 or the laser driver 5 before the surface-emitting laser 10 and the laser driver 5 are flip-chip connected. Each conductive bump is, for example, a metal bump.

[0161] The anode electrode 108 is connected, for example, to an anode-side terminal of the laser driver via the conductive bump BP1. The cathode wiring system 109 is connected, for example, to a cathode-side terminal of the laser driver via the conductive bump BP2.

[0162] The laser driver 5, for example, comprises a driver IC and is mounted on a circuit board. The driver IC includes, for example, an NMOS driver that controls the voltage applied to the surface-emitting laser 10. <15. Light source device comprising a surface-emitting laser according to Example 10 of an embodiment of the present technology

[0163] Fig. Figure 29 is a cross-sectional view of a light source device 2 comprising the surface-emitting laser 100 according to Example 10 of an embodiment of the present technology.

[0164] As in Fig. As illustrated in Figure 29, the light source device 2 comprises the surface-emitting laser 100 and a laser driver 5, each electrically connected via conductive prongs to a plurality of the anode electrodes 108 and the cathode wiring system 109 of the surface-emitting laser 100. In other words, the surface-emitting laser 100 is connected to the laser driver 5 via a flip-chip (junction-down) connection.

[0165] Each anode electrode 108 and the laser driver 5 are electrically connected by a conductive bump BP1. The portion of the wiring W of the cathode wiring system 109, located on the second structure ST2, and the laser driver 5 are electrically connected by a conductive bump BP2. The conductive bump BP1 can be attached to either the anode electrode 108 or the laser driver 5 before the surface-emitting laser 100 and the laser driver 5 are flip-chip connected. The conductive bump BP2 can be attached to either the cathode wiring system 109 or the laser driver 5 before the surface-emitting laser 100 and the laser driver 5 are flip-chip connected. Each conductive bump is, for example, a metal bump.

[0166] The numerous anode electrodes 108 are, for example, individually connected to a multitude of anode-side terminals of the laser driver via the conductive protrusion BP1. The cathode wiring system 109 is, for example, connected to a cathode-side terminal of the laser driver via the conductive protrusion BP2. <16. Other variations of the present technique

[0167] The present technique is not limited to the above examples and variations and can also be varied in other ways.

[0168] For example, the cathode electrode can be provided in a ring shape (e.g., a ring-shaped form) to surround the central part of the semiconductor layer (the transparent region) within the interior IS. In this case, it is preferred that the inner diameter of the cathode electrode is approximately 1 to 200 µm longer than the outer diameter of the central part of the semiconductor layer, and that the outer diameter of the cathode electrode is approximately 1 to 200 µm shorter than the inner diameter of the circumferential part of the semiconductor layer.

[0169] For example, current confinement in a surface-emitting laser is not limited to the ion implantation region. For instance, the current can be confined by QWI, embedded tunneling junctions, or similar mechanisms that trap charge carriers by providing a bandgap energy difference between inside and outside the aperture due to Ga vacancy diffusion.

[0170] For example, substrate 101 can be a Si substrate, a GaN substrate, an InP substrate, or the like. In each of these cases, it is preferred that the semiconductor layer deposited on substrate 101 be selected to match the lattice of the substrate 100 material. Any material with an oscillation wavelength in the wavelength band of 200 to 2000 nm can be used for the surface-emitting laser.

[0171] The first and second reflectors 102 and 106 are not limited to semiconductors and can, for example, consist of one type or a combination of two or more types selected from semiconductors, dielectrics and metals.

[0172] The anode electrode 108 and / or the cathode wiring system 109 may lack both the terminal metal and the plating metal. For example, the plating metal may be omitted, or the terminal metal may be omitted. Metal of other materials (such as copper) may be layered onto the plating metal. The anode electrode 108 and / or the cathode wiring system 109 may have a transparent conductive film. For example, the cathode electrode 109a may consist of a transparent conductive film.

[0173] In the process for manufacturing the surface-emitting laser, at least the via V in the second layer body L2 can be formed by the via V and the wiring W before the first and second layer bodies L1 and L2 are connected.

[0174] In the process for manufacturing the surface-emitting laser, the cathode electrode 109a can be provided at a position corresponding to the recess R in one of the first and second layer bodies L1 and L2, in which the recess R is not formed.

[0175] A contact layer in contact with the anode electrode 108 and / or the cathode electrode 109a can be provided.

[0176] The shape of the light-emitting unit is not limited to a circular shape when viewed from above and can be, for example, polygonal, oval, or the like.

[0177] The conductivity types (n-type and p-type) of the first and second structures ST1 and ST2 of the surface-emitting laser in the preceding examples and variations can be interchanged.

[0178] Some of the surface-emitting laser configurations in the preceding examples and variations can be combined, as long as they do not conflict with each other.

[0179] In each of the examples and variations described above, the material, conductivity type, thickness, width, numerical value, shape, size, and the like of each layer forming the surface-emitting laser can be changed as required within a scope that maintains its function as a surface-emitting laser. <17. Example of application to an electronic device>

[0180] The technology according to the present disclosure (the present technology) can be applied in various products (electronic devices). For example, the technology according to the present disclosure can be implemented as a device mounted on any type of moving body, such as an automobile, an electric car, a hybrid electric car, a motorcycle, a bicycle, a personal mobility device, an aircraft, a drone, a ship, a robot, or the like.

[0181] The surface-emitting laser according to the present technique can, for example, be used as a light source for a device that forms or displays images using laser light (e.g., laser printers, laser copiers, projectors, head-mounted displays, head-up displays, and the like). <18. Example of the application of a surface-emitting laser to a distance measuring device

[0182] An example of the application of the surface-emitting laser according to the above embodiment and variations is described below.

[0183] Fig. Figure 30 illustrates an example of the overall configuration of a distance measuring device 1000, which includes the surface-emitting laser 10 as an example of an electronic device according to the present technology. The distance measuring device 1000 measures the distance to an object S using the time-of-flight (TOF) method. The distance measuring device 1000 includes the surface-emitting laser 10 as a light source. The distance measuring device 1000 includes, for example, the surface-emitting laser 10, a light receiving device 125, lenses 115 and 130, a signal processing unit 140, a control unit 150, a display unit 160, and a storage unit 170.

[0184] The light receiving device 125 detects light reflected from the object S. The lens 115 is a collimating lens for converting light emitted by the surface-emitting laser 10 into parallel light. The lens 130 is a focusing lens for focusing light reflected from the object S and directing this light to the light receiving device 125.

[0185] The signal processing unit 140 is a circuit for generating a signal corresponding to the difference between a signal input from the light receiving device 125 and a reference signal input from the control unit 150. The control unit 150 is configured to include, for example, a time-to-digital converter (TDC). The reference signal can be a signal input from the control unit 150 or an output signal from a detection unit that directly detects the output of the surface-emitting laser 10. The control unit 150 is, for example, a processor that controls the surface-emitting laser 10, the light receiving device 125, the signal processing unit 140, the display unit 160, and the storage unit 170. The control unit 150 is a circuit that measures the distance to the object S based on the signal generated by the signal processing unit 140.The control unit 150 generates an image signal to display information about the distance to object S and outputs the image signal to the display unit 160. The display unit 160 shows the information about the distance to object S based on the image signal input from the control unit 150. The control unit 150 stores the information about the distance to object S in the memory unit 170.

[0186] In the present application example, one of the above surface-emitting lasers 20, 30, 40, 40, 50, 60, 70, 80, 90, 100, 110 and 120 can be used in the distance measuring device 1000 instead of the surface-emitting laser 10. <19. Example of installing a distance measuring device on a moving body

[0187] Fig. Figure 31 is a block diagram that schematically illustrates an example of the configuration of a vehicle control system, which is an example of a moving body control system to which the technique according to the present disclosure can be applied.

[0188] A vehicle control system 12000 comprises a multitude of electronic control units connected via a communication network 12001. In the Fig. In the illustrated example 31, the vehicle control system 12000 comprises a powertrain control unit 12010, a body control unit 12020, a unit for detecting information from outside the vehicle 12030, a unit for detecting information from inside the vehicle 12040, and an integrated control unit 12050. Additionally, a microcomputer 12051, an audio / video output unit 12052, and an in-vehicle network interface (I / F) 12053 are shown as functional configurations of the integrated control unit 12050.

[0189] The 12010 drive system control unit controls operations of devices related to the vehicle's drive system according to various types of programs. For example, the 12010 drive system control unit acts as a control device for components such as a power generation device to produce motive power for the vehicle, such as an internal combustion engine or a drive motor; a power transmission mechanism to transfer motive power to the wheels; a steering mechanism to adjust the vehicle's steering angle; a braking device that generates braking force for the vehicle; and the like.

[0190] The 12020 body control unit controls the operations of various devices mounted in the vehicle body according to different programs. For example, the 12020 body control unit acts as a control device for a keyless entry system, a smart key system, power windows, or various lights such as headlights, reversing lights, brake lights, turn signals, fog lights, and the like. In this case, radio waves emitted by a portable device that replaces a key, or signals from various switches, can be input into the 12020 body control unit. The 12020 body control unit receives the input of the radio waves or signals and controls them.

[0191] Door locking devices, window lifting devices, the lamps and the like of the vehicle.

[0192] The external information detection unit 12030 detects information from outside the vehicle in which the vehicle control system 12000 is installed. For example, a distance measuring device 12031 is connected to the external information detection unit 12030. The distance measuring device 12031 includes the distance measuring device 1000 described above. The external information detection unit 12030 causes the distance measuring device 12031 to measure the distance to an object (object S) outside the vehicle and obtains distance data as a result. Based on the distance data obtained, the external information detection unit 12030 can perform object detection processing for people, cars, obstacles, signs, and the like.

[0193] The vehicle interior information detection unit 12040 detects information from inside the vehicle. For example, a driver state detection unit 12041, which detects a driver's state, is connected to the vehicle interior information detection unit 12040. The driver state detection unit 12041 includes, for example, a camera that captures an image of the driver, and the vehicle interior information detection unit 12040 can calculate the driver's level of fatigue or concentration, or, based on detection information input from the driver state detection unit 12041, determine whether the driver is dozing off.

[0194] For example, the microcomputer 12051 can calculate control target values ​​for the drive force generation device, the steering mechanism, or the braking device based on information from inside and outside the vehicle, received by the external information detection unit 12030 and the internal information detection unit 12040, and issue control commands to the drive system control unit 12010. For example, the microcomputer 12051 can perform coordinated control for the purpose of implementing advanced driver assistance system (ADAS) functions, including vehicle collision avoidance, impact mitigation, following based on a distance between vehicles, constant vehicle speed driving, vehicle collision warnings, and lane departure warnings.

[0195] Additionally, the microcomputer 12051 can perform coordinated control for the purpose of automated driving or the like, in which autonomous driving is carried out without the need for operations by the driver, by controlling the propulsion power generation device, the steering mechanism, the braking device or the like based on information about the vehicle's environment, the information being obtained from the unit for detecting information from outside the vehicle 12030 or the unit for detecting information from inside the vehicle 12040.

[0196] Additionally, the microcomputer 12051 can issue control commands to the body control unit 12020 based on information from outside the vehicle, received by the external information detection unit 12030. For example, the microcomputer 12051 can perform coordinated control for glare suppression, such as switching from high beam to low beam, by controlling the headlights according to the position of a vehicle ahead or an oncoming vehicle, as detected by the external information detection unit 12030.

[0197] The 12052 audio / video output unit transmits an output signal of at least one sound and one image to an output device capable of providing visual or audible information to an occupant or the exterior of the vehicle. In the Fig. The 31 illustrated examples are a loudspeaker 12061, a display unit 12062, and a dashboard 12063 as examples of the output device. The display unit 12062, for example, can include at least one on-board display and one head-up display.

[0198] Fig. Figure 32 is a diagram illustrating an example of an installation position of the distance measuring device 12031.

[0199] In Fig. 32 has a vehicle 12100 distance measuring devices 12101, 12102, 12103, 12104 and 12105 as the distance measuring device 12031.

[0200] The distance measuring devices 12101, 12102, 12103, 12104, and 12105 are provided, for example, at the front of the vehicle, the side mirrors, the rear bumper, the tailgate, an upper portion of the windshield inside the vehicle cabin, and the like. The distance measuring device 12101 provided at the front and the distance measuring device 12105 provided in an upper portion of the windshield inside the vehicle cabin primarily receive data from in front of the vehicle 12100. The distance measuring devices 12102 and 12103 provided in the side mirrors primarily receive data from the sides of the vehicle 12100. The distance measuring device 12104 provided at the rear bumper or tailgate primarily receives data from an area behind the vehicle 12100.The data obtained from the distance measuring devices 12101 and 12105 are mainly used to detect vehicles ahead, pedestrians, obstacles, traffic signals, road signs and the like.

[0201] Fig. Figure 32 illustrates an example of detection ranges of the distance measuring devices 12101 to 12104. A detection range 12111 specifies a detection range of the distance measuring device 12101 provided at the front; detection ranges 12112 and 12113 each specify the detection ranges of the distance measuring devices 12102 and 12103 provided in the side mirrors; and a detection range 12114 specifies the detection range of the distance measuring device 12104 provided at the rear bumper or tailgate.

[0202] For example, the microcomputer 12051 can, in particular, identify a three-dimensional object as a preceding vehicle on a path traversed by the vehicle 12100, which is a three-dimensional object traveling at a predetermined speed (for example, at least 0 km / h) in essentially the same direction as the vehicle 12100, by obtaining a distance to each three-dimensional object in the detection ranges 12111 to 12114 and temporal changes in the distance (a relative speed with respect to the vehicle 12100) based on the distance data obtained from the distance measuring devices 12101 to 12104. The microcomputer 12051 can also preset a following distance to be maintained from the preceding vehicle and perform automatic braking control (including following stop control) and automatic acceleration control (including following start control).It is therefore possible to carry out coordinated control for the purpose of, for example, automated driving, in which the vehicle drives in an automated manner without the need for the driver to intervene.

[0203] For example, the microcomputer 12051 can classify and extract three-dimensional data relating to three-dimensional objects such as two-wheeled vehicles, normal vehicles, large vehicles, pedestrians, and other three-dimensional objects, such as power poles, based on the distance data obtained from the distance measuring devices 12101 to 12104, and can use the three-dimensional data to automatically avoid obstacles. For example, the microcomputer 12051 classifies obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see.The microcomputer 12051 then determines a collision risk, which indicates the degree of risk of a collision with each obstacle, and if the collision risk is at least a set value and there is a possibility of a collision, an alarm is issued to the driver via the loudspeaker 12061 or the display unit 12062, forced deceleration or avoidance steering is carried out via the drive system control unit 12010, and the like, making it possible to provide driver assistance for collision avoidance.

[0204] An example of the system for controlling moving bodies, to which the technique according to the present disclosure can be applied, has been described previously. The technique according to the present disclosure can be applied in the distance measuring device 12031 and the like under the configurations described above.

[0205] Additionally, the present technology can also have the following configurations.

[0206] A surface-emitting laser comprising the following: a first structure that includes a first reflector; a second structure that includes a second reflector; and an active layer located between the first and second structures, wherein an electrode is provided within the first structure. (2) The surface-emitting laser according to (1), wherein the first structure has an interior space, and the electrode is provided within the interior space. (3) The surface-emitting laser according to (2), the electrode is provided in a wall surface of the interior. (4) The surface-emitting laser according to (2) or (3), wherein a current confinement region, which has at least one annular part for defining a light-emitting region that defines a light-emitting region of the active layer, is formed in the first structure and / or the second structure, and the interior has a surrounding part in which the electrode is arranged, which surrounds a part of the first structure that corresponds to a central part of the light-emitting area. (5) The surface-emitting laser according to (4), wherein the electrode comprises a plurality of electrode parts which are arranged at different positions in the surrounding part. (6) The surface-emitting laser according to one of (2) to (5), which further comprises the following: a wiring system provided to penetrate the second structure, the active layer, and a portion between the interior of the first structure and the active layer, with one end of the wiring system connected to the electrode. (7) The surface-emitting laser according to (6), wherein the penetrating part of the wiring is surrounded by a region of high resistance or an insulating region. (8) The surface-emitting laser according to (6) or (7), wherein another end of the wiring is located on a surface of the second structure opposite the side of the active layer. (9) The surface-emitting laser according to a method described in (4) to (8), wherein the at least one part for defining a light-emitting area is a plurality of parts for defining a light-emitting area; and the interior has a plurality of circumferential parts, each corresponding to one of a plurality of the light-emitting areas. (10) The surface-emitting laser according to (9), wherein the multitude of electrodes provided in the multitude of surrounding parts are electrically interconnected. (11) The surface-emitting laser according to a section of (2) to (10), wherein a material with a low refractive index is provided in an area of ​​the interior surrounding the electrode. (12) The surface-emitting laser according to a method described in (2) to (11), wherein in the first structure a first component part, comprising at least a part of the first reflector, and a second component part are superimposed and connected to each other, and a first connecting surface, which is a connecting surface of one of the first and second component parts with the other of the first and second component parts, includes a wall surface of the interior. (13) The surface-emitting laser according to (12), wherein the interior space is defined by: a recess provided in a second connecting surface, which is a connecting surface of the other of the first and second component parts with one of the first and second component parts; and the first connecting surface. (14) The surface-emitting laser according to a method described in (4) to (13), wherein a cross-section of the surrounding part has a shape that becomes thinner near a center. (15) The surface-emitting laser according to a method described in (3) to (14), wherein the first structure comprises a semiconductor layer having the wall surface on the side of the active layer. (16) The surface-emitting laser according to (4), wherein another electrode is provided in an area surrounded in plan view by the part for defining a light-emitting area on a surface of the second structure opposite the side of the active layer. (17) The surface-emitting laser according to (16), wherein the other electrode has a surrounding part which, in plan view, surrounds a center of the light-emitting area. (18) The surface-emitting laser according to (16) or (17), wherein the second structure has a mesa that includes at least part of the second reflector, and the other electrode is arranged in a region of the second structure in a circumference of the mesa. (19) The present technology provides a light source device comprising: the surface-emitting laser according to one of (8) to (18); and a laser driver that controls the surface-emitting laser, the laser driver and the other end of the wiring are connected by a conductive bump. (20) Electronic device comprising: the surface-emitting laser according to one of (1) to (19). [List of reference symbols] 10, 20, 30, 40, 50, 60, 70, 80, 90, 100, 110, 120 Surface-emitting laser 101 Substrat 102 First reflector 103 First cladding layer (semiconductor layer) 104 Active shift 106 Second reflector 108 anode electrode (other electrode) 109a Cathode electrode 109a1, 109a2 Electrode part ST1 First Structure ST2 Second Structure IS interior ISa Surrounding Area R recess LA Light Emitting Area JS1 connection surface JS2 connection area W wiring IIA Ion implantation area (current confinement area) IIAa Part for defining a light-emitting area LRM material with low refractive index BP1, BP2 Conductive hump 1000 Distance measuring device (electronic device) QUOTES INCLUDED IN THE DESCRIPTION

[0000] This list of documents cited by the applicant was automatically generated and is included solely for the reader's convenience. The list is not part of the German patent or utility model application. The DPMA accepts no liability for any errors or omissions. Cited patent literature

[0000] JP 2009-164449A

[0003]

Claims

[1] Surface emitting laser, comprising: a first structure comprising a first reflector; a second structure comprising a second reflector; and an active layer arranged between the first and second structures, wherein an electrode is provided within the first structure. [2] Surface emitting laser according to claim 1, wherein the first structure has an interior space, and the electrode is provided inside the interior. [3] Surface emitting laser according to claim 2, wherein the electrode is in contact with a wall surface of the interior. [4] Surface emitting laser according to claim 2, wherein a current confinement region having at least one annular part for defining a light-emitting region defining a light-emitting region of the active layer is formed in the first structure and / or the second structure, and the interior space has a surrounding part in which the electrode is arranged, which surrounds a part of the first structure corresponding to a central part of the light-emitting region. [5] A surface emitting laser according to claim 4, wherein the electrode comprises a plurality of electrode parts arranged at different positions in the surrounding part. [6] A surface emitting laser according to claim 2, further comprising: a wiring provided to penetrate the second structure, the active layer, and a part between the interior of the first structure and the active layer, one end of the wiring being connected to the electrode. [7] A surface emitting laser according to claim 6, wherein a penetrating part of the wiring is surrounded by a high resistance region or an insulating region. [8] A surface emitting laser according to claim 6, wherein another end of the wiring is arranged on a surface of the second structure opposite to the active layer side. [9] The surface emitting laser according to claim 4, wherein the at least one light-emitting region defining part is a plurality of light-emitting region defining parts; and the interior space includes a plurality of the surrounding parts each corresponding to one of a plurality of the light-emitting regions. [10] A surface emitting laser according to claim 9, wherein the plurality of electrodes provided in the plurality of surrounding parts are electrically connected to each other. [11] A surface emitting laser according to claim 2, wherein a low refractive index material is provided in a region of the internal space surrounding the electrode. [12] Surface emitting laser according to claim 2, wherein in the first structure a first component part comprising at least a part of the first reflector and a second component part are superimposed and connected to each other, and a first connecting surface, which is a connecting surface of one of the first and second component parts with the other of the first and second component parts, comprising the wall surface of the interior space. [13] The surface emitting laser according to claim 12, wherein the internal space is defined by: a recess provided in a second joining surface which is a joining surface of the other of the first and second component parts with the one of the first and second component parts; and the first joining surface. [14] A surface emitting laser according to claim 4, wherein a cross section of the surrounding part has a shape that becomes thinner near a center. [15] A surface emitting laser according to claim 3, wherein the first structure comprises a semiconductor layer having the wall surface on the side of the active layer. [16] A surface emitting laser according to claim 4, wherein another electrode is provided in a region surrounded in plan view by the light emitting region defining part on a surface of the second structure opposite to the active layer side. [17] The surface emitting laser according to claim 16, wherein the other electrode has a surrounding region surrounding a center of the light emitting region in plan view. [18] The surface emitting laser of claim 16, wherein the second structure comprises a mesa including at least a portion of the second reflector, and the other electrode is disposed in a region of the second structure in a perimeter of the mesa. [19] Light source device, comprising: the surface-emitting laser according to claim 8; and a laser driver that controls the surface-emitting laser, where the laser driver and the other end of the wiring are connected by a conductive bump. [20] Electronic device comprising: the surface-emitting laser according to claim 1.

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