Method and apparatus for atomic layer deposition or chemical vapor deposition

Abstract

SOLUTION: There is provided an apparatus including a process chamber, a precursor gas source, a reactant gas source, an inhibitor gas source, a passivation gas source, a gas, a switching manifold, and a controller. The switching manifold in a first position provides fluid connection between the inhibitor gas source and a gas inlet. The switching manifold in a second position provides fluid connection between the precursor gas source and the gas inlet. The switching manifold in a third position provides fluid connection between the reactant gas source and the gas inlet. The switching manifold in a fourth position provides fluid connection between the passivation gas source and the gas inlet. The switching manifold prevents the gas inlet from being in fluid connection with at least two of the gas sources at the same time.SELECTED DRAWING: Figure 1

Description

[Background technology]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS This application claims the benefit of priority to U.S. Patent Application No. 62 / 773,377, filed November 30, 2018, which is incorporated by reference herein for all purposes.

[0002] FIELD OF THE DISCLOSURE This disclosure relates to the formation of semiconductor devices. More particularly, this disclosure relates to the formation of semiconductor devices using atomic layer deposition or chemical vapor deposition. Summary of the Invention

[0003] To achieve the foregoing and in accordance with the objectives of the present disclosure, an apparatus is provided that includes a process chamber, a precursor gas source, a reactant gas source, an inhibitor gas source, a passivation gas source, a gas inlet fluidly connected to the process chamber, a switching manifold, and a controller controllably connected to the switching manifold, wherein the switching manifold in a first position provides a fluid connection between the inhibitor gas source and the gas inlet, the switching manifold in a second position provides a fluid connection between the precursor gas source and the gas inlet, the switching manifold in a third position provides a fluid connection between the reactant gas source and the gas inlet, and the switching manifold in a fourth position provides a fluid connection between the passivation gas source and the gas inlet, and the switching manifold prevents the gas inlet from being fluidly connected to at least two of the precursor gas source, the reactant gas source, the passivation gas source, and the inhibitor gas source simultaneously.

[0004] In another statement, a method is provided for filling a feature in a substrate, wherein an inhibitor layer is selectively deposited at a selected depth of the feature, and wherein a deposition layer is deposited in the feature by an atomic layer deposition process or a chemical vapor deposition process, the deposition layer being selectively inhibited over portions of the feature on which the inhibitor layer is deposited.

[0005] In another statement, an apparatus is provided that includes a process chamber, a chemical vapor deposition gas source, an inhibitor gas source, a passivation gas source, a gas inlet fluidly connected to the process chamber, a switching manifold, and a controller controllably connected to the switching manifold, wherein the switching manifold in a first position provides a fluid connection between the inhibitor gas source and the gas inlet, the switching manifold in a second position provides a fluid connection between the chemical vapor deposition gas source and the gas inlet, and the switching manifold in a third position provides a fluid connection between the passivation gas source and the gas inlet, and the switching manifold prevents the gas inlet from being fluidly connected to at least two of the chemical vapor deposition gas source, the passivation gas source, and the inhibitor gas source simultaneously.

[0006] These and other features of the present disclosure are described in more detail below in the following Detailed Description of the Disclosure in conjunction with the following drawings.

[0007] The present disclosure is illustrated by way of example, and not by way of limitation, in the figures of the accompanying drawings in which like reference numbers refer to similar elements. [Brief description of the drawings]

[0008] [Figure 1] FIG. 1 is a schematic diagram of an embodiment of an atomic layer deposition (ALD) system.

[0009] [Diagram 2] FIG. 2 is a schematic diagram of a computer system that may be used in implementing the embodiments.

[0010] [Diagram 3] FIG. 3 is a flow chart of an embodiment using the ALD system shown in FIG.

[0011] [Figure 4A] FIG. 4A is a schematic cross-sectional view of a portion of a stack processed according to an embodiment. [Figure 4B] FIG. 4B is a schematic cross-sectional view of a portion of a stack processed according to an embodiment. [Figure 4C] FIG. 4C is a schematic cross-sectional view of a portion of a stack processed according to an embodiment. [Figure 4D] FIG. 4D is a schematic cross-sectional view of a portion of a stack processed in accordance with an embodiment. [Figure 4E] FIG. 4E is a schematic cross-sectional view of a portion of a stack processed in accordance with an embodiment. [Figure 4F] FIG. 4F is a schematic cross-sectional view of a portion of a stack processed in accordance with an embodiment.

[0012] [Diagram 5] FIG. 5 is a more detailed flow chart of the steps of depositing the inhibitor layer.

[0013] [Figure 6] FIG. 6 is a schematic diagram of an embodiment of a chemical vapor deposition (CVD) system.

[0014] [Figure 7] FIG. 7 is a high level flow chart of a process for using the CVD system shown in FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0015] The present invention will now be described in detail with reference to several preferred embodiments of the present disclosure as illustrated in the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present disclosure. However, it will be apparent to one skilled in the art that the present disclosure may be practiced without some or all of these specific details. In other instances, well-known process steps and / or structures have not been described in detail in order to avoid unnecessarily obscuring the present disclosure.

[0016] FIG. 1 is a schematic diagram of an embodiment of an atomic layer deposition (ALD) system 100. The ALD system 100 includes a process chamber 104. Within the process chamber 104 is a substrate support 108. A showerhead 112 is positioned above the substrate support 108. A gas inlet 116 connects the showerhead 112 to a switching manifold 120. The switching manifold 120 is connected to a precursor gas source 124, a reactant gas source 128, an inhibitor gas source 132, a purge gas source 136, and a passivation gas source 138. The switching manifold 120 may include one or more manifolds connected to one or more valves. An exhaust system 140 is fluidly connected to the process chamber 104 to evacuate exhaust gases from the process chamber 104 and to control the chamber pressure. A high frequency (HF) radio frequency RF source 144 is electrically connected to the substrate support 108 via a matching network 148. A low frequency (LF) RF source 152 is electrically connected to the substrate support 108 through a matching network 148. A controller 156 is controllably connected to the switching manifold 120, the exhaust system 140, the HF RF source 144, and the LF RF source 152. A substrate 160 is disposed on the substrate support 108. An example of such a chamber is the Striker™ Oxide system manufactured by Lam Research Corporation of Fremont, CA.

[0017] 2 is a high-level block diagram illustrating a computer system 200 suitable for implementing the controller 156 used in the embodiments. The computer system 200 may have many physical forms ranging from an integrated circuit, a printed circuit board, a small portable device, and a huge supercomputer. The computer system 200 includes one or more processors 202 and may further include an electronic display device 204 (for displaying graphics, text, and other data), a main memory 206 (e.g., random access memory (RAM)), a storage device 208 (e.g., a hard disk drive), a removable storage device 210 (e.g., an optical disk drive), a user interface device 212 (e.g., a keyboard, a touch screen, a keypad, a mouse, or other pointing device, etc.), and a communication interface 214 (e.g., a wireless network interface). The communication interface 214 allows software and data to be transferred between the computer system 200 and external devices via a link. The system may also include a communication infrastructure 216 (e.g., a communication bus, a crossover bar, or a network) to which the aforementioned devices / modules are connected.

[0018] Information transferred through communications interface 214 may be in the form of signals, such as electronic, electromagnetic, optical, or other signals, capable of being received by communications interface 214 over a communications link that transmits the signals, and may be implemented using wire or cable, fiber optics, telephone lines, cellular phone links, radio frequency links, and / or other communications channels. It is contemplated that such communications interfaces may enable one or more processors 202 to receive information from a network or output information to a network in the course of performing the method steps described above. Furthermore, method embodiments may be performed solely on a processor, or may be performed over a network, such as the Internet, in conjunction with a remote processor that shares a portion of the processing.

[0019] The term "non-transitory computer-readable medium" is generally used to refer to storage devices such as main memory, secondary memory, removable storage, and hard disks, flash memory, disk drive memory, CD-ROMs, and other forms of persistent memory, and should not be construed to cover transitory objects such as carrier waves or signals. Examples of computer code include machine code, such as produced using a compiler, and files containing higher level code that are executed by a computer using an interpreter. The computer-readable medium may be computer code embodied in a carrier wave and conveyed by a computer data signal representing a sequence of instructions executable by a processor.

[0020] FIG. 3 is a high-level flow chart of a process using the ALD system 100. This process may be referred to as Inhibition Control Enhancement (ICE). In one embodiment, gap fill is performed on a substrate 160 on a substrate support 108. FIG. 4A is an enlarged cross-sectional view of a portion of the substrate 160 below the stack 400. A layer 404 on the substrate 160 has one or more features 408. The drawings may not be drawn to scale. In this embodiment, the features are high aspect ratio features, with a ratio of depth to maximum width exceeding 50:1. In this example, the feature 408 has a neck 412 where the feature 408 narrows. In addition, the feature 408 is curved at a location 416 where the feature 408 is widest. Conformal deposition causes the neck 412 to close before the location of the bend 416 is filled, forming a void when the feature is filled.

[0021] In this embodiment, an inhibitor deposition process is provided (step 304). FIG. 5 is a more detailed flow chart of the steps of the inhibitor deposition process (step 304). An inhibitor gas is provided (step 504). The inhibitor gas flows into the process chamber 104. In this example, the switching manifold 120 is disposed in a first position. In the first position of the switching manifold 120, the inhibitor gas source 132 is in fluid communication with the gas inlet 116. The inhibitor gas flows from the inhibitor gas source 132 through the gas inlet 116 into the process chamber 104. In the first position, the precursor gas source 124, the reactant gas source 128, the purge gas source 136, and the passivation gas source 138 are not in fluid communication with the gas inlet 116. In this example, the inhibitor gas is iodine at 5-1000 sccm. The inhibitor gas is formed into an inhibitor plasma (step 508). In this example, first, high frequency excitation power is applied at a frequency of 13.56 megahertz (MHz) and a power of 250-6500 Watts. A bias is applied (step 512). A first low frequency bias power is applied, in this example, at a frequency of 400 kHz and a power of 0-5000 Watts. After 0.05-500 seconds, the inhibitor deposition process is stopped.

[0022] 4B is an enlarged cross-sectional view of the substrate 160 and a portion of the stack 400 after the inhibitor has been applied to form an inhibitor layer 420. The inhibitor layer 420 is deposited mostly in areas where deposition should be inhibited, such as the neck 412, to avoid pinching and void formation. The high frequency excitation power and low frequency bias may be used as tuning knobs to selectively deposit the inhibitor layer 420 to a selected depth such that the inhibitor layer is deposited in a desired portion of the feature 408. Additionally, the length of time that the inhibitor is applied may be used as an additional tuning knob.

[0023] After the inhibitor layer 420 is deposited, an atomic layer deposition process is provided (step 308). In this example, the atomic layer deposition process (step 308) includes a precursor deposition process (step 312), a first purge (step 314), a reactant application process (step 316), and a second purge (318). In this example, during the precursor deposition process (step 312), the switching manifold 120 is placed in a second position. In the second position of the switching manifold 120, the precursor gas source 124 is in fluid communication with the gas inlet 116. The precursor gas flows from the precursor gas source 124 through the gas inlet 116 into the process chamber 104. In the second position, the inhibitor gas source 132, the reactant gas source 128, and the purge gas source 136 are not in fluid communication with the gas inlet 116. In this example, the precursor gas is 100-1000 sccm of CH 19 A silicon-containing precursor such as N3Si. In this example, the precursor gas is not formed into a plasma. Therefore, a second high frequency power is provided at a frequency of 13.56 MHz and at a power less than 500 watts. In this example, this power is 0 watts, so no high frequency power is provided. In this example, a low bias or no bias is provided. As a result, a second low frequency bias power is provided at a frequency of 400 kHz and at a power less than 500 watts. After 0.05 to 10 seconds, application of the precursor is stopped. In this example, the flow of the precursor gas is stopped.

[0024] Once the flow of precursor gas is stopped, a first purge of precursor gas is provided (step 314) by positioning the switching manifold 120 such that the purge gas source 136 is fluidly connected to the gas inlet 116. The purge gas flows from the purge gas source 136 through the gas inlet 116 into the process chamber 104. The inhibitor gas source 132, the reactant gas source 128, and the precursor gas source 124 are not fluidly connected to the gas inlet 116. In this example, the purge gas can be Ar.

[0025] After the precursor gas is purged by performing a first purge (step 314), a reactant is applied (step 316). The reactant gas flows into the process chamber 104. In this example, the switching manifold 120 is disposed in a third position. In the third position of the switching manifold 120, the reactant gas source 128 is in fluid communication with the gas inlet 116. The reactant gas flows from the reactant gas source 128 through the gas inlet 116 into the process chamber 104. In the third position, the precursor gas source 124, the inhibitor gas source 132, and the purge gas source 136 are not in fluid communication with the gas inlet 116. In this example, the reactant gas is an oxidizing gas of oxygen (O2) at 250-20,000 sccm. The reactant gas is formed into a plasma. In this example, a third radio frequency excitation power is provided at a frequency of 13.56 MHz and at a power of 125-6500 Watts. A bias is provided (step 512). In this example, a third low frequency bias power is provided at a frequency of 400 kHz and a power of 25-5000 Watts. After 0.05-140 seconds, application of the reactive gas is stopped.

[0026] Once the flow of the reactant gas is stopped, a second purge gas is provided to purge the reactant gas (step 318). The second purge gas may be the same as the first purge gas, or it may be a different purge gas. If the second purge gas is the same as the first purge gas, the second purge gas is provided by positioning the switching manifold 120 in a position such that the purge gas source 136 is fluidly connected to the gas inlet 116. The second purge gas flows from the purge gas source 136 through the gas inlet 116 into the process chamber 104. The inhibitor gas source 132, the reactant gas source 128, and the precursor gas source 124 are not fluidly connected to the gas inlet 116. If the second purge gas is different from the first purge gas, the switching manifold is positioned such that another purge gas source is fluidly connected to the gas inlet 116.

[0027] The atomic layer deposition process (step 308) may be performed in one or more cycles. In this example, the atomic layer deposition process (step 308) is performed for 1-60 cycles. FIG. 4C is an enlarged cross-sectional view of the substrate 160 and a portion of the stack 400 after the atomic layer deposition process (step 308) is completed. To facilitate understanding, the atomic layer deposition 424 is shown larger than its actual size. As shown, no or less of the atomic layer deposition 424 is deposited where the inhibitor layer 420 is deposited. The inhibitor layer 420 selectively inhibits the atomic layer deposition over the portions of the feature where the inhibitor layer 420 is deposited.

[0028] In this example, the gap filling is not complete, so the process is repeated (step 324). A passivation process (step 328) is provided to remove the remaining inhibitor layer 420. In this example, the switching manifold 120 is placed in a fourth position. In the fourth position of the switching manifold 120, the passivation gas source 138 is in fluid communication with the gas inlet 116. The passivation gas flows from the passivation gas source 138 through the gas inlet 116 into the process chamber 104. In the fourth position, the precursor gas source 124, the reactant gas source 128, the inhibitor gas source 132, and the purge gas source 136 are not in fluid communication with the gas inlet 116. In one embodiment, the passivation gas includes oxygen. In other embodiments, the passivation gas may include one or more of O2, H2, or a noble gas, such as He or Ar. The passivation gas is formed into a plasma. A fourth high frequency excitation power, in this example, is provided at a frequency of 13.56 MHz and a power between 250 and 6500 Watts. A bias is provided. A fourth low frequency bias power, in this example, is provided at a frequency of 400 kHz and a power between 0 and 5000 Watts. The passivation process is then stopped. The passivation process selectively removes any remaining inhibitor deposition relative to the atomic layer deposition 424.

[0029] A new inhibitor layer is deposited by performing another inhibitor deposition process (step 304). The inhibitor deposition process is repeated using different HF and LF RF powers. Figure 4D is an enlarged cross-sectional view of the substrate 160 and a portion of the stack 400 after the inhibitor deposition process (step 304) is completed. In this example, the HF and LF powers are adjusted so that the inhibitor layer 428 does not extend as far into the feature 408 as the previous inhibitor layer 420. This allows atomic layer deposition to deposit further up the feature 408.

[0030] The ALD process (step 308) is repeated. Figure 4E is an enlarged cross-sectional view of the substrate 160 and a portion of the stack 400 after the atomic layer deposition process (step 308) is completed. The atomic layer deposition 424 extends further up the feature 408.

[0031] In some embodiments, the cycle of inhibitor deposition process (step 304), atomic layer deposition process (step 308), and passivation process (step 328) is repeated 1-2000 times. FIG. 4F is an enlarged cross-sectional view of the substrate 160 and a portion of the stack after the gap-fill process is completed. In this embodiment, the use of an inhibitor deposit and tuning of the LF and HF RF signal powers helps prevent voids in the gap-fill. Additional processes may be performed on the stack 400.

[0032] The switching manifold 120 prevents any two of the inhibitor gas, precursor gas, purge gas, and reactant gas from flowing simultaneously. Providing an inhibitor gas source 132 and a switching manifold 120 that supplies an inhibitor gas separately from the precursor gas and the reactant gas allows for inhibitor deposition. In various embodiments, the inhibitor gas can be iodine, chlorine, nitrogen trifluoride (NF3), sulfonyl halide, diol (i.e., ethanediol, ethylene glycol, propanediol, etc.), diamine (i.e., ethylenediamine, propylenediamine, etc.), acetylene or ethylene, carbon monoxide (CO), carbon dioxide (CO2), pyridine, piperidine, pyrrole, pyrimidine, imidazole, or benzene. Additionally, the low frequency RF and high frequency RF configurations allow for tailoring the location of the inhibitor deposit so that it is deposited in the area of ​​the feature where inhibition of deposition is desired. The switching manifold 120 prevents the gas inlet 116 from being simultaneously fluidly connected to at least two of the precursor gas source 136, the reactant gas source 128, the passivation gas source 138, the purge gas source 136, and the inhibitor gas source 132. In this embodiment, when the switching manifold 120 is placed in the fifth position, in the fifth position, a fluid connection is provided between the purge gas source 136 and the gas inlet 116, and the gas inlet 116 is prevented from being fluidly connected to the precursor gas source 124, the reactant gas source 238, the passivation gas source 248, and the inhibitor gas source 132.

[0033] It has been found that by grounding the showerhead 112 and providing HF RF power and LF RF power to the substrate support 108, control of the location of the inhibitor deposit is improved. Without being bound by theory, it is believed that increasing the bias to the substrate support results in deeper deposition of the inhibitor layer 420. In these embodiments, the low frequency is in the range of 100 kHz to 1 MHz. The high frequency is in the range of 10 MHz to 100 MHz. Thus, selective bias may be used to control the selective deposition of the inhibitor layer 420 depth.

[0034] An improved conditioning process is provided by providing an inhibitor layer 420 that may be used for multiple atomic layer deposition cycles, using a passivation process to remove the remaining inhibitor layer 420, and then providing a new inhibitor layer 428. Thus, an improved ALD process is provided by providing a passivation gas separate from providing a precursor gas, providing a purge gas, providing a reactant gas, and providing an inhibitor gas.

[0035] In the above embodiment, a dielectric material such as silicon oxide is deposited in the gap-fill process. In other embodiments, other materials such as metal oxides are deposited in the gap-fill process.

[0036] In one embodiment, an acceleration control enhancement (ACE) may be provided to allow accelerated deposition in areas of the feature different from where the inhibitor deposition was performed, which will accelerate deposition in the areas where the accelerated deposition is deposited.

[0037] FIG. 6 is a schematic diagram of an embodiment of a chemical vapor deposition (CVD) system 600. The CVD system 600 includes a process chamber 604. Within the process chamber 604 is a substrate support 608. A showerhead 612 is positioned above the substrate support 608. The showerhead 612 is grounded. A gas inlet 616 connects the showerhead 612 to a switching manifold 620. The switching manifold 620 is connected to a CVD gas source 624, an inhibitor gas source 632, and a passivation gas source 638. The CVD gas source 624 may include one or more gas sources used for the CVD process. The switching manifold 620 may include one or more manifolds connected to one or more valves. An exhaust system 640 is fluidly connected to the process chamber 604 to evacuate exhaust gases from the process chamber 604 and to control the chamber pressure. A high frequency (HF) radio frequency RF source 644 is electrically connected to the substrate support 608 through a matching network 648. In this embodiment, the HF RF source 644 provides an RF signal having a frequency in the range of 10 MHz to 100 MHz to the substrate support 608. A low frequency (LF) RF source 652 is electrically connected to the substrate support 608 through a matching network 648. In this embodiment, the LF source 652 provides an RF signal having a frequency in the range of 100 kHz to 1 MHz. A controller 656 is controllably connected to the switching manifold 620, the exhaust system 640, the HF RF source 644, and the LF RF source 652. A substrate 660 is disposed on the substrate support 608.

[0038] 7 is a high level flow chart of a process for using CVD system 600. This process may be referred to as Inhibitor Control Enhancement (ICE). In one embodiment, gap fill is performed on a substrate 660 on a substrate support 608. Inhibitor deposition is performed (step 704). In this example, an inhibitor layer is deposited in the narrowest portion of the feature. A chemical vapor deposition layer is deposited (step 708) by chemical vapor deposition. In this embodiment, the inhibitor deposition selectively deposits less of the chemical vapor deposition layer on areas of the feature with the inhibitor layer than on areas of the feature without the inhibitor layer.

[0039] If the feature is not completely filled, the process may be repeated (step 724). In this embodiment, a passivation step (step 728) is used to remove any remaining inhibitor layer. Another inhibitor deposition is performed (step 704) to deposit another inhibitor. Another CVD process is performed (step 708) to continue filling the feature. The CVD process selectively deposits less on areas with an inhibitor layer.

[0040] The switching manifold 620 in a first position provides a fluid connection between the inhibitor gas source 632 and the gas inlet 616, the switching manifold 620 in a second position provides a fluid connection between the chemical vapor deposition gas source 624 and the gas inlet 616, and the switching manifold in a third position provides a fluid connection between the passivation gas source 638 and the gas inlet 616, and the switching manifold 620 prevents the gas inlet 616 from being fluidly connected to at least two of the chemical vapor deposition gas source 624, the passivation gas source 638, and the inhibitor gas source 632 simultaneously.

[0041] In this embodiment, the controller 656 comprises at least one processor and a computer readable medium. The computer readable medium includes computer code for providing a plurality of cycles, each cycle including performing an inhibitor deposition including placing the switching manifold 620 in a first position, performing a chemical vapor deposition including placing the switching manifold 620 in a second position, and performing a passivation including placing the switching manifold 620 in a third position. In this embodiment, the controller 656 is controllably connected to the high frequency RF source 644 and the low frequency RF source 652. The computer readable medium further includes computer code for providing a first high frequency excitation power and a first low frequency bias power when the switching manifold 620 is disposed in a first position, computer code for providing a second high frequency excitation power and a second low frequency bias power when the switching manifold 620 is disposed in a second position, and computer code for providing a third high frequency excitation power and a third low frequency bias power when the switching manifold 620 is disposed in a third position. In this embodiment, the computer readable medium further includes computer code for providing a first high frequency excitation power when the switching manifold 620 is disposed in the first position, the first high frequency excitation power being greater than 250 Watts.

[0042] Although the present disclosure has been described with respect to several preferred embodiments, there are changes, modifications, substitutions, and various substitute equivalents that are within the scope of the present disclosure. It should also be noted that there are many alternative ways of implementing the methods and apparatuses of the present disclosure. Therefore, it is intended that the following appended claims be interpreted to include all such changes, modifications, substitutions, and various substitute equivalents as fall within the true spirit and scope of the present disclosure.

Claims

1. 1. An apparatus comprising: A process chamber; a precursor gas source; A reactive gas source; a source of inhibitor gas; a passivation gas source; a gas inlet in fluid communication with the process chamber; a switching manifold, the switching manifold in a first position providing a fluid connection between the inhibitor gas source and the gas inlet, the switching manifold in a second position providing a fluid connection between the precursor gas source and the gas inlet, the switching manifold in a third position providing a fluid connection between the reactant gas source and the gas inlet, and the switching manifold in a fourth position providing a fluid connection between the passivation gas source and the gas inlet, the switching manifold preventing the gas inlet from being fluidly connected to at least two of the precursor gas source, the reactant gas source, the passivation gas source, and the inhibitor gas source simultaneously; a controller controllably connected to the switching manifold.

2. 2. The apparatus of claim 1, a substrate support within the process chamber; the apparatus further comprising a showerhead within the process chamber in fluid communication with the gas inlet.

3. The apparatus of claim 2 , wherein the showerhead is disposed above the substrate support and is grounded.

4. 4. The apparatus of claim 3, a low frequency RF source electrically connected to the substrate support, a low frequency RF source that supplies an RF signal having a frequency in the range of 100 kHz to 1 MHz to the substrate support; a high frequency RF source electrically connected to the substrate support, The apparatus further comprises a high frequency RF source that supplies an RF signal having a frequency in the range of 10 MHz to 100 MHz to the substrate support.

5. 5. The apparatus of claim 4, The controller: At least one processor; a computer readable medium containing computer code for performing a plurality of cycles; Equipped with Each of the cycles comprises: performing an inhibitor deposition, the inhibitor deposition including placing the diverter manifold in the first position; performing at least one atomic layer deposition cycle comprising placing the switching manifold in the second position and placing the switching manifold in the third position.

6. 6. The apparatus of claim 5, the controller is controllably connected to the high frequency RF source and the low frequency RF source; The computer readable medium comprises: computer code for supplying a first RF excitation power when the switching manifold is disposed in the first position; computer code for supplying a first low frequency bias power when the switching manifold is disposed in the first position; computer code for supplying a second RF excitation power when the switching manifold is disposed in the second position; computer code for supplying a second low frequency bias power when the switching manifold is disposed in the second position; computer code for supplying a third RF excitation power when the switching manifold is disposed in the third position; computer code for supplying a third low frequency bias power when the switching manifold is disposed in the third position; The apparatus further comprises:

7. 7. The apparatus of claim 6, The apparatus, wherein the second high frequency excitation power is less than 500 Watts and the second low frequency bias power is less than 500 Watts, the third high frequency excitation power is greater than 125 Watts and the third low frequency bias power is greater than 25 Watts.

8. 8. The apparatus of claim 7, The apparatus, wherein the first radio frequency excitation power is greater than 250 watts.

9. 9. The apparatus of claim 8, the computer code for performing a plurality of cycles further comprises placing the switching manifold in a fourth position, and the computer readable medium further comprises computer code for supplying a fourth radio frequency excitation power when the switching manifold is placed in the fourth position, the fourth radio frequency excitation power being greater than 250 Watts.

10. 2. The apparatus of claim 1, The apparatus, wherein the precursor gas source provides a silicon-containing precursor and the reactant gas source provides an oxidizing gas.

11. 2. The apparatus of claim 1, the switching manifold further comprising a purge gas source fluidly connected to the switching manifold, wherein in the first position, the second position, the third position, and the fourth position, the switching manifold prevents the purge gas source from being fluidly connected to the gas inlets, and the switching manifold has a fifth position, the fifth position providing a fluid connection between the purge gas source and the gas inlets and preventing the gas inlets from being fluidly connected to the precursor gas source, the reactant gas source, the passivation gas source, and the inhibitor gas source.

12. 1. A method for filling features in a substrate, comprising: a) selectively depositing an inhibitor layer at a selected depth of the feature; b) performing an atomic layer deposition process or a chemical vapor deposition process to deposit a deposition layer in the feature; the deposition layer is selectively inhibited over portions of the feature on which the inhibitor layer is deposited.

13. 13. The method of claim 12, The method further comprising repeating steps a and b.

14. 13. The method of claim 12, The method further comprises, after step b), a step c) of carrying out a passivation process, which removes any remaining inhibitor layer, and then repeating steps a and b.

15. 13. The method of claim 12, The step of selectively depositing the inhibitor layer comprises: flowing an inhibitor gas; converting the inhibitor gas into an inhibitor plasma; stopping the flow of the inhibitor gas; A method comprising:

16. 16. The method of claim 15, The method, wherein the step of selectively depositing the inhibitor layer further comprises applying a selective bias.

17. 1. An apparatus comprising: A process chamber; a chemical vapor deposition gas source; a source of inhibitor gas; a passivation gas source; a gas inlet in fluid communication with the process chamber; a switching manifold, the switching manifold in a first position providing a fluid connection between the inhibitor gas source and the gas inlet, the switching manifold in a second position providing a fluid connection between the chemical vapor deposition gas source and the gas inlet, and the switching manifold in a third position providing a fluid connection between the passivation gas source and the gas inlet, the switching manifold preventing the gas inlet from being fluidly connected to at least two of the chemical vapor deposition gas source, the passivation gas source, and the inhibitor gas source simultaneously; a controller controllably connected to the switching manifold; An apparatus comprising:

18. 18. The apparatus of claim 17, a substrate support within the process chamber; a showerhead in the process chamber fluidly connected to the gas inlet.

19. 20. The apparatus of claim 18, The apparatus, wherein the showerhead is disposed above the substrate support, the showerhead being grounded.

20. 20. The apparatus of claim 19, a low frequency RF source electrically connected to the substrate support, a low frequency RF source that supplies an RF signal having a frequency in the range of 100 kHz to 1 MHz to the substrate support; a high frequency RF source electrically connected to the substrate support, a high frequency RF source that supplies an RF signal having a frequency in the range of 10 MHz to 100 MHz to the substrate support; The apparatus further comprises:

21. 21. The apparatus of claim 20, The controller: At least one processor; A computer readable medium, The computer readable medium comprises: comprising computer code for performing a plurality of cycles; Each of the cycles comprises: performing an inhibitor deposition, the inhibitor deposition including placing the diverter manifold in the first position; conducting chemical vapor deposition, including disposing the switching manifold at the second position; performing a passivation step, the passivation step including placing the switching manifold in a third position; 13. An apparatus comprising:

22. 22. The apparatus of claim 21, the controller is controllably connected to the high frequency RF source and the low frequency RF source; The computer readable medium comprises: computer code for supplying a first RF excitation power when the switching manifold is disposed in the first position; computer code for supplying a first low frequency bias power when the switching manifold is disposed in the first position; computer code for supplying a second RF excitation power when the switching manifold is disposed in the second position; computer code for supplying a second low frequency bias power when the switching manifold is disposed in the second position; computer code for supplying a third RF excitation power when the switching manifold is disposed in the third position; computer code for supplying a third low frequency bias power when the switching manifold is disposed in the third position; The apparatus further comprises:

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