Carrier substrate, method for manufacturing carrier substrate, and method for transferring transfer layer from carrier substrate to product substrate

Abstract

To provide a carrier substrate that transfers graphene from a first surface, which is a production surface, to a second surface, which is a use surface.SOLUTION: A carrier substrate 1 for transferring a transfer layer 6 from a carrier substrate to a product substrate includes at least a carrier base substrate 3, a protective layer 5, and the transfer layer 6, in that order, the transfer layer 6 is grown on the protective layer 5.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention describes a carrier substrate, a method for manufacturing the carrier substrate and a method for transferring a transfer layer from the carrier substrate to a product substrate, where a transfer layer, in particular a graphene layer, is first arranged on the carrier substrate, in particular the transfer layer is produced or grown on a layer of the carrier substrate, and is transferred to the product substrate by a transfer method.

[0002] Layer transfer processes already exist in the prior art. These processes are used to transfer very thin layers, in particular layers with a thickness in the micrometer or even nanometer range, from one substrate to another. Many of these layers can only be manufactured on a specific first surface, which is not at the same time intended to be part of a subsequent functional component. It is therefore necessary to transfer a layer from a first surface to a second surface.

[0003] One of the most widely known layer transfer processes in the semiconductor industry is the SmartCut™ process. In this process, ions, especially hydrogen ions, are irradiated onto a first monocrystalline substrate. The penetration depth of the hydrogen ions can be controlled by their kinetic energy and is only a few nanometers. The hydrogen ions remain in the first substrate until it is bonded to an oxidized second substrate. A thermal treatment then causes the hydrogen atoms to combine to form water molecules and separates the first monocrystalline substrate along the plane where the hydrogen ions are concentrated. A three-layer structure is obtained in which the oxide is sandwiched between two other materials, usually silicon. The transfer layer of the first substrate is then very thin and, above all, monocrystalline. The oxide layer underneath has a beneficial effect on components with high switching frequencies, especially transistors.

[0004] Attempts to produce graphene on a large scale have been made in industry for several years. In the prior art there are many methods for producing graphene. Graphene flakes can already be produced industrially on a ton scale. However, these graphene flakes are of little importance for the semiconductor industry, since they are too small and occur mainly in wet chemical processes, especially in solutions, and not on the substrate surface. The aim is to produce graphene layers at wafer level, i.e. on the entire surface of the wafer, or targeted to the existing topology of the wafer. However, the production of graphene layers at wafer level seems to be the most promising.

[0005] The biggest problem here is the cost-effective, rapid, large-area, defect-free production of graphene layers and other sensitive transfer layers. Experience has shown that the growth of large areas of graphene layers is particularly favorable on single-crystal metal surfaces.

[0006] The problem is that the surface on which graphene is grown over a large area rarely coincides with the surface on which it is structured for use. This requires the transfer of graphene from a first surface, which is the production surface, to a second surface, which is the use surface. This transfer is usually achieved by using release means, in particular lasers, whose action, in particular the electromagnetic radiation, can destroy or damage the transfer layer and the graphene layer.

[0007] The object of the present invention is therefore to provide a carrier substrate, a method for producing a carrier substrate and a method for transferring a transfer layer from a carrier substrate to a product substrate, which at least partially overcomes, in particular completely overcomes, the drawbacks found in the prior art. In particular, the object of the present invention is to provide an improved carrier substrate, a method for producing a carrier substrate and a transfer method for transferring a transfer layer from a carrier substrate to a product substrate. Furthermore, in particular, the object of the present invention is to provide a carrier substrate and a method for transferring a transfer layer from a carrier substrate to a product substrate, in which the transfer layer is not destroyed or damaged, in particular by electromagnetic radiation.

[0008] The problem of the invention is solved by the features of the independent claims. Advantageous developments of the invention are specified in the dependent claims. Any combination of at least two features shown in the description, claims and / or drawings is included within the scope of the invention. In the indicated value ranges, values ​​that are within the stated limits are also to be considered as disclosed as limit values ​​and can be claimed in any combination.

[0009] In the following text, a transfer layer or transferred layer, in particular in the form of a graphene layer, is understood to mean a layer on a carrier substrate which is to be transferred to a product substrate. In particular, the transfer layer is grown on a protective layer or growth layer of the carrier substrate. Protective layer and growth layer are used synonymously in the following text.

[0010] However, the growth layer and the protection layer may also be two different layers, where the growth layer is in contact with the transfer layer, so that the protection layer is located between the growth layer and the carrier base substrate. In the following text, for simplicity, it is assumed that the growth layer and the protection layer are identical. This situation is also more economically rational, since in this case only one layer needs to be deposited, which keeps the process costs low.

[0011] The present invention therefore relates to a carrier substrate for transferring a transfer layer from a carrier substrate to a product substrate, the carrier substrate comprising at least the following layers in the following order: - Carrier base board - a protective layer, and - Transfer layer wherein the transfer layer is grown on a protective layer and relates to a carrier substrate.

[0012] The carrier substrate comprises at least the aforementioned layers in the aforementioned order. However, it is also conceivable that further intermediate layers, in particular having specific functions, are arranged between and / or on the aforementioned layers. In particular, the protective layer may be composed of, for example, a number of individual layers, each of which protects the transfer layer. Here, the protective layer acts as a barrier to protect the transfer layer from influences that may affect the transfer and damage or destroy the transfer layer. In order to transfer the transfer layer from the carrier substrate to the product substrate, in particular the adhesion properties of the region between the protective layer and the transfer layer are reduced, in which case the protective layer protects the layer to be transferred. This layer structure of the carrier substrate allows the transfer of the transfer layer to be carried out advantageously easily and efficiently, in which the transfer layer is not damaged because it is protected by the protective layer. Furthermore, the dual function of the protective layer as a barrier and as a growth layer for the transfer layer allows for less expensive production on an industrial scale.

[0013] The invention also relates to a method for producing a carrier substrate for transferring a transfer layer from the carrier substrate to a product substrate, in particular as claimed in any one of the preceding claims, comprising i) providing a carrier base substrate; ii) applying a protective layer onto the carrier base substrate; iii) growing a transfer layer, in particular a graphene layer, on the protective layer; The present invention relates to a method comprising the steps of:

[0014] The method for producing a carrier substrate provides for the growth of a transfer layer on a protective layer. The protective layer serves to protect the transfer layer during the transfer of the transfer layer and can also serve as a place for the generation or growth of the transfer layer. In this way, the protective layer has a dual function, so that additional layers can be omitted in the production. Furthermore, the carrier substrate with the protective layer allows the subsequent transfer of the transfer layer without damaging it. Advantageously, in this way, it is possible to easily separate the place for the generation or growth of the transfer layer and its use on the product substrate.

[0015] Furthermore, the present invention provides a method for transferring a transfer layer from a carrier substrate or a carrier substrate manufactured by a method for manufacturing a carrier substrate to a product substrate, the method comprising the steps of: - contacting the carrier substrate with the product substrate such that the transfer layer faces the product substrate; In so doing, at least one peeling means acts on the carrier substrate, thereby peeling off the transfer layer together with the protective layer from the carrier base substrate.

[0016] Thus, the transfer method of the transfer layer advantageously allows the transfer layer to be easily and efficiently transferred from one surface to another, particularly from a production surface to a use surface.

[0017] The peeling is possible by the action of at least one peeling means, in particular in the form of a laser, preferably in the form of an infrared laser, whereby the protective layer protects or shields the transfer layer from the influence of the at least one peeling means so that the transfer layer is not damaged. In this case, it is particularly envisaged to peel the transfer layer together with the protective layer from the carrier substrate and then to remove the protective layer. In order to bring the carrier substrate into contact with the product substrate, preferably no relative movement between the contact surfaces is possible. Before the contact, the carrier substrate and the product substrate are aligned with each other, in particular by alignment of the respective substrate carriers. During the alignment, the alignment is performed as precisely as possible, in particular by using alignment marks applied on the carrier substrate and / or the product substrate. As a result, the transfer of the transfer layer to the product substrate is advantageously possible easily and efficiently. Particularly advantageously, the transfer layer is not damaged or destroyed by the action of the peeling means. In this case, the generation or growth of the transfer layer has been performed beforehand on the carrier substrate. At this point, therefore, the transfer layer can advantageously be peeled off from its place of origin or its growth on the carrier substrate, in particular on the protective layer, and placed on the product substrate.

[0018] In a preferred embodiment of the carrier substrate, it is provided that the transfer layer is a graphene layer. The graphene layer is then arranged on and protected by a protective layer. It is provided that the carrier substrate designed for transferring the graphene layer is peeled off from the carrier base substrate together with the protective layer during transfer, thus separating the graphene layer from the carrier substrate, so that no damage or destruction of the graphene layer can occur by peeling means, in particular in the form of electromagnetic radiation. The carrier substrate is therefore intended for the transfer of the graphene layer. This carrier substrate advantageously allows for an easy and efficient production and transfer of the graphene layer on a large scale, instead of the conventional merely laboratory scale. It is particularly advantageous to grow the graphene layer on a protective layer as a transfer layer.

[0019] Another preferred embodiment of the carrier substrate envisages that the roughness of the protective layer, especially on the surface facing the transfer layer, is less than 100 μm, preferably less than 10 μm, more preferably less than 1 μm, very preferably less than 100 nm, most preferably less than 10 nm. In particular, the generation or growth of the transfer layer is only possible by keeping the roughness of the growth layer as low as possible. Particularly thin transfer layers, especially graphene layers, need to be grown on very flat and clean surfaces. In this way, the transfer layer is generated on a layer that protects the transfer layer even before it is subjected to the influence of the peeling means acting during the transfer. It is preferable to recrystallize the protective layer during its manufacture before the growth of the transfer layer, which further simplifies or improves the growth of the transfer layer, especially the graphene layer.

[0020] Another preferred embodiment of the carrier substrate provides that the carrier substrate comprises at least one release layer arranged between the carrier base substrate and the protective layer. The release layer advantageously allows the exact position of the release of the transfer layer on the carrier base substrate to be defined. Furthermore, the release along the release layer advantageously allows easy and efficient release.

[0021] Furthermore, the design of the release layer can advantageously define the required adhesion between the carrier base substrate and the protective layer, and in particular the influences under which the transfer layer can be peeled off.

[0022] Another preferred embodiment of the carrier substrate provides that the transfer layer can be peeled off from the carrier base substrate together with the protective layer by a peeling means acting on the peeling layer and / or the peeling area. When performing the peeling process, the peeling means acts on the carrier substrate. In this case, the peeling layer or the peeling area and the peeling means are adapted to each other. In this case, the peeling layer is a proper material layer, whereas the peeling area is defined by the contact surface between the carrier base substrate and the protective layer. Peeling in the peeling area can occur, for example, by expansion of a material introduced in the contact surface area. The peeling area therefore does not represent a proper layer of the carrier substrate, but in particular performs the same function. When the peeling means acts on the peeling area or the peeling layer, in particular the adhesion properties of the peeling layer or of the contacting protective layer and carrier base substrate change, so that the protective layer can be peeled off from the carrier base substrate together with the transfer layer. In this way, the transfer of the transfer layer from the carrier substrate to the product substrate can be performed in a particularly easy and efficient manner.

[0023] In another preferred embodiment of the carrier substrate, it is assumed that the protective layer is made of a material in which carbon can dissolve.If the protective layer is a material in which carbon has a particularly high solubility, a transfer layer, particularly made of graphene, can be generated or grown on the protective layer by heating and cooling.In this case, carbon is deposited on the surface of the protective layer, and a transfer layer is generated on the carrier substrate.By this particular advantageous layer structure of the carrier substrate, the generated transfer layer can now be easily and efficiently transferred to the product substrate.

[0024] Another preferred embodiment of the carrier substrate assumes that the protective layer is designed to be non-transparent to electromagnetic radiation.When electromagnetic radiation, for example laser, is used to peel off the release layer or to reduce the adhesive properties of the release layer, the protective layer can absorb the radiation and prevent damage or destruction of the transfer layer.In this embodiment, the carrier base substrate is preferably at least partially transparent to electromagnetic radiation.For example, the carrier base substrate is made of glass, preferably sapphire glass.

[0025] Another preferred embodiment of the carrier substrate provides for a contact layer, which is arranged on the side of the transfer layer opposite the protective layer, in particular consisting of a dielectric material, preferably silicon oxide. Such a contact layer allows for easier and more reliable contact during transfer to the product substrate. Furthermore, the use of a dielectric material, for example silicon oxide, in the contact layer can prevent short circuits in the product substrate or allow electrical conduction between the product substrate and the transfer layer only where desired. It is also possible to arrange a further contact layer on the product substrate. The contact layer and the further contact layer of the product substrate are preferably made of the same material, which allows for a particularly easy contact between the carrier substrate and the product substrate.

[0026] Another preferred embodiment of the carrier substrate provides that the protective layer is a monocrystalline metal layer, preferably made of nickel. The production or growth of the transfer layer is advantageously carried out on a monocrystalline material. By using a monocrystalline metal layer, the transfer layer can advantageously be grown on the protective layer. At the same time, the monocrystalline metal layer is also suitable for protecting the transfer layer from the effects of electromagnetic radiation-based release means, for example lasers. A protective layer made of nickel is most preferred, since the graphene layer can be produced or grown particularly well on such a nickel-based layer.

[0027] Another preferred embodiment of the carrier substrate provides for the transfer layer to be produced on the protective layer. According to this embodiment, the transferred layer is produced directly on the protective layer. In this way, the transfer layer is advantageously arranged directly on the protective layer, so that the transfer layer is directly protected by the protective layer from the influence acting from the opposite side of the protective layer. This particular layer structure of the carrier substrate allows easy and efficient transfer of the transfer layer from the carrier substrate to the product substrate.

[0028] In another preferred embodiment of the carrier substrate, it is envisaged that the protective layer is simultaneously designed as a growth layer for the transfer layer, so that the transfer layer can be grown on the protective layer. In this embodiment, the protective layer fulfills two functions. The first function is the protection function of the protective layer, which means in particular that the protective layer protects the transfer layer from the effects of the peeling means. The second function allows the growth of the transfer layer on the protective layer, which can then be used simultaneously as a growth layer. In this way, advantageously, only one layer is required for the protection and generation of the transfer layer, in particular the graphene layer. It is also conceivable that the protective layer is composed of several layers. In this case, one or more layers facing the peeling layer are designed as protective layers. One or more layers opposite the peeling layer allow the generation of the transfer layer. The dual function of the protective layer is thus achieved by two or more layers, in which case the protective layer consists of at least two layers. However, it is preferred that one layer forms the protective layer, which layer simultaneously allows the protective function and the generation of the transfer layer.

[0029] In another preferred embodiment of the carrier substrate, it is envisaged that the transfer layer together with the protective layer can be peeled off from the carrier base substrate by at least one peeling means acting on the peeling layer or on the peeling area. The peeling means, preferably in the form of a laser, acts on the peeling layer to reduce the adhesive properties of the peeling layer, so that the transfer layer together with the protective layer can be peeled off from the carrier substrate. In this case, the peeling means preferably acts on the peeling layer. Further effects arising from the peeling means are reduced, preferably prevented, by the protective layer. In this case, the protective layer acts on the transfer layer as a barrier against effects arising preferably from the peeling means. In this way, the peeling of the transfer layer can be advantageously carried out without damaging the transfer layer.

[0030] In a preferred embodiment of the method for producing a carrier substrate, it is envisaged to recrystallize the protective layer before the growth of the transfer layer in step iii).In this way, the function of the growth layer can be even better performed on the protective layer, which preferably has a very low roughness.In this way, the growth of the transfer layer, in particular the graphene layer, on the protective layer is simplified or improved.

[0031] In a preferred embodiment of the method for producing a carrier substrate, it is envisaged that before the application of the protective layer in step ii), the carrier base substrate is covered with a release layer, and the protective layer is applied on the release layer. In this way, the release layer can be advantageously easily peeled off during the subsequent transfer of the generated transfer layer. Furthermore, the application of the release layer can advantageously define the location of the peeling off.

[0032] In a preferred embodiment of the method for producing a carrier substrate, it is envisaged to deposit a contact layer on the side of the transfer layer opposite the protective layer. The contact layer advantageously simplifies the bonding step carried out during the transfer of the transfer layer. Furthermore, the contact layer can also help to make a better contact with the product substrate. Furthermore, the functionalized contact layer can allow contact with the transfer layer in certain predefined areas, for example by conductive areas.

[0033] In a preferred embodiment of the method for producing a carrier substrate, it is envisaged that the protective layer is simultaneously designed as a growth layer for growing a transfer layer on the protective layer, and that the transfer layer is grown on the protective layer. In this way, the protective layer advantageously performs a protective function and also allows the production of a transfer layer on the protective layer. Advantageously, therefore, only one layer is used. However, it would also be conceivable for the protective layer to consist of two or more layers. In that case, one or more layers facing the release layer are designed to protect against the effects of the release means. The further one or more layers allow the production of the transfer layer as a growth layer. However, it is preferred that the protective layer consists of one layer with a dual function. In this way, the method for producing a carrier substrate can be advantageously carried out easily and efficiently.

[0034] Another preferred embodiment of the method for producing a carrier substrate provides for depositing a contact layer on the transfer layer. The contact layer is preferably made of a dielectric material, particularly preferably silicon oxide. As a result, subsequent short circuits in the product substrate can be prevented. Furthermore, the contact between the carrier substrate and the product substrate can be carried out particularly easily and safely.

[0035] In a preferred embodiment of the method for transferring the transfer layer, it is envisaged that the carrier substrate is brought into contact with the product substrate via a contact layer applied on the transfer layer, or that the carrier substrate is brought into contact with a further contact layer applied on the product base substrate of the product substrate via a contact layer applied on the transfer layer. In this way, the product substrate is provided with a further contact layer. The contact layer is preferably made of a dielectric material, particularly preferably made of silicon oxide. If the carrier substrate also has a contact layer on the transfer layer, the contact layer of the carrier substrate and the further contact layer of the product substrate are particularly preferably made of the same material. In this way, the contact during the transfer can be made particularly easily and efficiently. Furthermore, the contact layer prevents short circuits.

[0036] Another preferred embodiment of the transfer method of the transfer layer is to connect the transfer layer to the product substrate or to connect the contact layer arranged on the transfer layer to the product substrate. The transfer layer is connected to the product substrate, so that the transfer is completed.

[0037] The bonding process is preferably divided into a pre-bonding and a subsequent permanent bonding. In the pre-bonding, a relatively weak connection is created between the two substrates that can theoretically be peeled off again without breaking, which is preferably based on surface effects. In this case, hydrophilic surfaces are particularly advantageous. The subsequent permanent bonding is characterized by a strengthening of the connection created in the pre-bonding. The permanent bonding is preferably achieved by increasing the temperature. However, it is desirable that the temperature is as low as possible in order to reduce or preferably completely eliminate the possibility of damage to the transfer layer or to parts of the installation that may be present. Therefore, the temperature during the permanent bonding is preferably below 300°C, preferably below 200°C, even more preferably below 100°C, very preferably below 50°C, and most preferably at room temperature. Such pre-bonding and permanent bonding are known to those skilled in the art.

[0038] The protective layer is peeled off from the transfer layer, in particular before, during or after the connection of the transfer layer with the product substrate. This method allows a defect-free, large-area, highly sensitive transfer of the transfer layer to be carried out particularly easily and efficiently. The transfer of the graphene layer to the product substrate is particularly preferred. The product substrate itself may already have functional components built in, in particular vias, so that the desired targeted electrical conductivity between the product substrate and the transfer layer is only possible in these areas.

[0039] In the following, the term growth layer is used for the protective layer. In many cases, the protective layer is designed for the protection and generation or growth of the transfer layer, so the terms growth layer and protective layer are hereinafter referred to as growth layer. However, this does not mean only a single growth layer that does not have a protective function, but the growth layer is a protective layer on which the transfer layer can be grown or generated.

[0040] A particular embodiment of the inventive idea comprises the presentation of a method by which the growth or production, transfer and exfoliation of individual transferred or graphene layers from the production side of a carrier substrate to the use side of a product substrate can be carried out, where the basic idea is to produce a layer system consisting of a carrier base substrate, an exfoliation layer, a growth layer, a graphene layer (transfer layer) and preferably a dielectric layer in a well-defined sequence so that the layer transfer can be carried out without any problems.

[0041] In a further aspect of the invention, it is envisaged to produce very specific layer structures on a carrier substrate, the individual layers of which perform different functional tasks. In particular, a release layer is used to separate the graphene layer from the carrier substrate. A growth layer or a protection layer is used for the growth of the transfer layer or the graphene layer and at the same time for protection.

[0042] The carrier substrate on which the transferred layer or graphene can be manufactured and the product base substrate on which the transferred layer or graphene is used are generally different. Thereby, the process of manufacturing the transferred layer or growing the graphene is separated from the place of use of the transferred layer or use of the graphene. Accordingly, the production of such a sensitive transferred layer or graphene layer is flexible and cost-effective.

[0043] The carrier substrate and the method for transferring the transfer layer can in principle be used for the transfer of any kind of transferred or transferred layer. However, as an example, the transfer of a graphene layer as a transfer layer is described, since the transfer of such a monolayer has to meet certain requirements and could not be carried out in this way in industry so far.

[0044] However, the method according to the invention is in no way limited to the transfer of graphene layers: for example, the transferred layer can also be another carbon-based, in particular monoatomic, layer.

[0045] The transfer layer preferably consists of at least one of the following material classes or materials:

[0046] 2D layered materials, especially Graphene Graphene ·Borophene Germane ·Silicen ·Si 2 BN Garenen · Stanen · Pranbeng Phosphorene Antimonene Vismten 2D supercrystals ·Compound Grafin Boronitrene ·Boron carbonitride Germanan Germanium phosphide ·Transition metal dichalcogenides ·MXene Layer materials with various elemental compositions, especially ·MoS2, WS2, MoSe2, hBN, Ti4N3, Ti4AlN3 Van der Waals heterostructures, especially ·MoS2-G;MoS2-hBN, MoS2-hBN-G Metals, especially ·Cu, Ag, Au, Al, Fe, Ni, Co, Pt, W, Cr, Pb, Ti, Ta, Zn, Sn Semiconductors, especially ·Ge, Si, α-Sn, B, Se, Te Compound semiconductors, especially ·GaAs, GaN, InP, InxGa1-xN, InSb, InAs, GaSb, AlN, InN, GaP, BeTe, ZnO, CuInGaSe2, ZnS, ZnSe, ZnTe, CdS, CdSe, CdT e, Hg(1-x)Cd(x)Te, BeSe, HgS, AlxGa1-xAs, GaS, GaSe, GaTe, InS, InSe, InTe, CuInSe2, CuInS2, CuInGaS2, SiC, SiGe ·ceramic ·polymer Further materials SiO 2 ·Si3N4 MnO 2 TBA x H (1.07-x) Ti 1.73 O 4 *H2O CoO 2 - TBA x H (1-x) Ca 2 Nb 3 O 10 Bi 2 SrTa 2 O 9 ·Cs 4 W 11 O 36 2- Ni(OH) 5 / 3 DS 1 / 3 Eu(OH) 2.5 (DS) 0.5 ·Co 2 / 3 Fe 1 / 3 (OH) 2 1 / 3+ [Cu 2 Br(IN 2 )] n ]

[0047] The transfer layer is most preferably a layer made of graphene.

[0048] The transfer method of the transfer layer requires, in particular, a product substrate and a carrier substrate. The product substrate and the carrier substrate generally consist of a product base substrate and a carrier base substrate. Generally, multiple layers can be deposited on the product base substrate and / or the carrier base substrate.

[0049] The product base substrate and the carrier base substrate can in principle consist of any material, but preferably belong to one of the following material classes: 1. Semiconductor materials, especially 1.1 Ge, Si, α-Sn, B, Se, Te 2. Metals, especially 2.1 Cu, Ag, Au, Al, Fe, Ni, Co, Pt, W, Cr, Pb, Ti, Ta, Zn, Sn 3. Compound semiconductors, especially 3.1 GaAs, GaN, InP, InxGa1-xN, InSb, InAs, GaSb, AlN, InN, GaP, BeTe, ZnO, CuInGaSe2, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe , Hg(1-x)Cd(x)Te, BeSe, HgS, AlxGa1-xAs, GaS, GaSe, GaTe, InS, InSe, InTe, CuInSe2, CuInS2, CuInGaS2, SiC, SiGe 4. Glass, especially 4.1 Metallic glasses 4.2 Non-metallic glasses, especially 4.2.1 Organic non-metallic glasses 4.2.2 Inorganic non-metallic glasses, especially 4.2.2.1 Non-oxide glasses, especially 4.2.2.1.1 Halide glasses 4.2.2.1.2 Chalcogenide glasses 4.2.2.2 Oxide glasses, especially 4.2.2.2.1 Phosphate glass 4.2.2.2.2 Silicate glasses, especially 4.2.2.2.2.1 Aluminosilicate glasses 4.2.2.2.2.2 Lead silicate glass 4.2.2.2.2.3 Alkali silicate glasses, especially 4.2.2.2.2.3.1 Alkali and alkaline earth silicate glasses 4.2.2.2.2.4 Borosilicate glass 4.2.2.2.2.5 Quartz glass 4.2.2.2.3 Borate glasses, especially 4.2.2.2.3.1 Alkali borate glasses 4.3 Materials called glass but which are not glass 4.3.1 Sapphire glass

[0050] The substrate will be described in detail below.

[0051] Product Board In a first embodiment, the product substrate consists only of a product base substrate. The product substrate therefore does not include any coating. The product base substrate without layers serves in particular as a starting layer for a transferred graphene layer, which is then structured as a conductive layer. Further substrates can then be bonded to this conductive layer. It is also conceivable to equip individual chips. The most preferred product base substrate is a wafer, in particular a silicon wafer.

[0052] In a second embodiment, a layer is present on the product base substrate, which is hereinafter referred to as the contact layer. The contact layer is preferably a dielectric layer, very preferably a silicon oxide layer. This layer is called the contact layer because it is in contact with the layer to be transferred, in particular the graphene layer, or the layer to be deposited thereon, in a later process step. The contact layer is preferably a dielectric layer, very preferably an oxide, most preferably silicon oxide. The oxide can be thermally generated or natively grown in an oxygen atmosphere. Such a dielectric layer can facilitate the transfer process of the transfer layer or graphene layer and may also be necessary for the desired end result.

[0053] In a third embodiment, the functional units, in particular microchips, memories, MEMs, LEDs, etc., are prefabricated on the product base substrate. In a very particularly preferred extended embodiment, the product base substrate is covered with a contact layer, in particular after the functional units have been fabricated. In a further process step, the dielectric contact layer is then opened, in particular by lithography, above the contacts of the functional units. The openings thus created can then be filled with conductors, in particular metals, in a further process step. The vias are called TSVs (English: through silicon vias) in the semiconductor industry. The contact layer is thus a hybrid layer. The vias represent electrical areas and the surrounding dielectric layer represents dielectric areas. A transfer layer or a graphene layer is then transferred to the contact layer in a subsequent process step, so that contacts are produced between the graphene and the functional units via TSVs. It is also conceivable to use only the product base substrate with the functional units, without the contact layer, and to transfer the transfer layer onto it.

[0054] The contact layer allows the selection of a material that has certain properties that the product substrate itself does not have. For example, silicon is an inherent semiconductor and therefore has very little electrical conductivity even at room temperature. The surface onto which the transfer layer or the graphene layer is transferred is often desirably a dielectric in order to prevent short circuits after structuring of the graphene, which is the material of the transfer layer. Silicon can be oxidized by known methods, so silicon oxide is the preferred material for the dielectric layer.

[0055] A transfer layer, for example a graphene layer, can then be transferred to one of the aforementioned product substrates using the method, which can then be structured, in particular such that the electrically conductive contacts of the functional units are correspondingly connected, in particular via TSVs.

[0056] The product base substrate is preferably a wafer, and particularly preferably a silicon wafer.

[0057] Carrier Board The carrier substrate consists of at least one carrier base substrate, a growth layer and a transfer layer arranged thereon, in particular a pre-produced graphene layer. These layers are applied in a certain order on the carrier substrate. The aforementioned layers must necessarily be applied in the aforementioned order. However, it is also conceivable that there are further layers between the aforementioned layers, in particular those used for other purposes. In particular, a release layer may be arranged between the carrier base substrate and the protective layer.

[0058] In a first embodiment, the carrier substrate consists of at least one carrier base substrate, a release layer deposited thereon, a growth layer produced on the release layer and a transfer layer arranged thereon, in particular in the form of a graphene layer produced thereon.

[0059] The first layer is a release layer, whose role is to enable the carrier base substrate to be separated from the other layers in a release process.

[0060] The second layer is a growth layer on which a transfer layer is placed or on which a graphene layer is grown or produced. The growth layer can in principle have any morphology and grain structure, but is preferably monocrystalline. The growth layer is preferably a metal layer, in a very particularly preferred embodiment a metal layer in which carbon can dissolve. The solubility of carbon should preferably decrease with decreasing temperature, in order to allow precipitation, especially at the surface of the growth layer.

[0061] One particularly preferred advantageous feature of the growth layer or protective layer is that it acts as a barrier in the peeling method used. This at least prevents or reduces the passage of influences that are certainly necessary for the peeling process of the peeling layer, but which should not act on the transfer layer or graphene layer. Such influences include heat input, in particular the action of electromagnetic radiation, in particular laser light. The growth layer therefore serves not only as a location for graphene growth, but also as a barrier between the graphene layer and the location of the peeling process that takes place in the peeling layer. The protective layer is particularly characterized in that it is designed in conjunction with the peeling method used, so that on the one hand the production of the transfer layer can take place, and at the same time this transfer layer is protected by the protective layer from the excessively strong influences of the peeling method.

[0062] The protective layer or growth layer also has a roughness as low as possible. The roughness is indicated either as average roughness, square roughness or average roughness depth. The measurements of average roughness, square roughness and average roughness depth are generally different in the same measurement section or measurement surface, but are in the same order of magnitude range. Therefore, the following numerical ranges of roughness should be understood as values ​​of either average roughness, square roughness or average roughness depth. The roughness of the growth layer is less than 100 μm, preferably less than 10 μm, more preferably less than 1 μm, very preferably less than 100 nm, most preferably less than 10 nm.

[0063] Likewise, the roughness of the release layer is as low as possible, in particular to keep the roughness of the growth layer formed on the release layer as low as possible. The roughness of the release layer is then less than 100 μm, preferably less than 10 μm, more preferably less than 1 μm, very preferably less than 100 nm, most preferably less than 10 nm. The release layer can in principle consist of any material that causes separation from the growth layer using the above-mentioned release method. However, preferably, the release layer is not a polymer, since polymers cause unnecessary and undesirable contamination of the equipment used in the method according to the invention. Therefore, the release layer preferably consists of a metal, an alloy or a semiconductor material. For completeness, the most important material classes that can be used as a release layer are listed.

[0064] 1. Semiconductor materials, especially 1.1 Ge, Si, α-Sn, B, Se, Te 2. Metals, especially 2.1 Cu, Ag, Au, Al, Fe, Ni, Co, Pt, W, Cr, Pb, Ti, Ta, Zn, Sn 3. Compound semiconductors, especially 3.1 GaAs, GaN, InP, InxGa1-xN, InSb, InAs, GaSb, AlN, InN, GaP, BeTe, ZnO, CuInGaSe2, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe , Hg(1-x)Cd(x)Te, BeSe, HgS, AlxGa1-xAs, GaS, GaSe, GaTe, InS, InSe, InTe, CuInSe2, CuInS2, CuInGaS2, SiC, SiGe 4. Polymers 4.1. Carbon-based polymers 4.2. Silicone-based polymers

[0065] The exfoliation layer most preferably consists of an epitaxially grown GaN layer, the GaN layer being epitaxially grown on a carrier substrate, in particular a sapphire substrate. By using a very thin GaN layer, contaminating polymer layers can be eliminated.

[0066] In a further embodiment, the release layer is designed as a release zone, which eliminates the release layer when ions, preferably hydrogen ions, are implanted into the growth layer and / or the carrier substrate, which would lead to damage of the growth layer and / or the carrier substrate under thermal loading. This process is known in the semiconductor industry as the SmartCut™ process. Thus, the release zone takes on the function of a release layer with the introduced ions.

[0067] If the detachment method is a method using electromagnetic radiation, in particular a laser, the penetration of the electromagnetic radiation into the transfer layer can already be prevented or at least reduced by the thickness of the protective layer, which in this case is thicker than 1 nm, preferably thicker than 100 nm, more preferably thicker than 1 μm, very preferably thicker than 100 μm, and most preferably thicker than 1 mm.

[0068] If the detachment method is a thermal one, a protective layer made of a material with the lowest possible thermal conductivity can be used to extend the heat transport at least until the end of the detachment process, with a thermal conductivity of 0.1 W / (m·K) to 5000 W / (m·K), preferably 1 W / (m·K) to 2500 W / (m·K), even more preferably 10 W / (m·K) to 1000 W / (m·K), and very preferably 100 W / (m·K) to 450 W / (m·K).

[0069] The third layer is the transferred or transferred graphene layer and is generated, laid down or deposited by any process.

[0070] In a second embodiment, at least one further layer, in particular a contact layer, is further deposited on the graphene layer. Insofar as the product substrate also comprises a contact layer, the contact layer is preferably composed of the same material or a very similar material as the contact layer of the product substrate. The contact layer is thus likewise preferably an oxide, particularly preferably a silicon oxide. In particular, applying an oxide as the last layer on the graphene layer has the advantage that the carrier substrate can be joined to the product substrate by fusion bonding. In this case, the product substrate also preferably comprises an oxide layer. This makes it particularly easy to create a connection between the two substrates.

[0071] The contact layer is preferably hydrophilic. An indicator of hydrophobicity or hydrophilicity is the contact angle formed between a test drop, especially water, and the measurement surface. The hydrophilic surface flattens the drop, resulting in a smaller contact angle, since the adhesive forces between the liquid and the hydrophilic surface are more dominant than the cohesive forces of the liquid. The hydrophobic surface causes the drop to become spherical in shape, since the cohesive forces of the liquid are more dominant than the adhesive forces between the liquid and the hydrophobic surface. The contact angle is less than 90°, preferably less than 45°, more preferably less than 30°, very preferably less than 10°, most preferably less than 5°. A hydrophilic contact layer is particularly useful for better and easier transfer.

[0072] The carrier base substrate is preferably made of a material that has the best possible properties for the delamination method used. In case of a thermal delamination process, a material with high thermal conductivity is recommended in order to transfer heat very quickly to the delamination layer. The thermal conductivity is 0.1 W / (m·K) to 5000 W / (m·K), preferably 1 W / (m·K) to 2500 W / (m·K), even more preferably 10 W / (m·K) to 1000 W / (m·K), very preferably 100 W / (m·K) to 450 W / (m·K).

[0073] The graphene layer transfer process is described below.

[0074] process Carrier Substrate Manufacturing Process In the first process step of the manufacturing process of the carrier substrate, the carrier base substrate is coated with a release layer.

[0075] In a second process step of the manufacturing process of the carrier substrate, a growth layer is applied, in particular deposited, on the release layer. The growth layer is preferably monocrystalline. It is almost impossible to produce a monocrystalline growth layer, in particular on a polymeric release layer. Therefore, in a particular embodiment, the growth layer is not generated on the release layer by a deposition process, but is transferred to the release layer by a separate layer transfer process. In this case, the SmartCut™ process is considered. Any other layer transfer process is also considered suitable.

[0076] In a third process step of the manufacturing process of the carrier substrate, a transfer layer is placed or generated on the growth layer. The transfer layer is preferably a graphene layer, which is generated or grown. Here, the growth of the graphene layer can be performed by any method known in the art.

[0077] For example, one could envisage dissolving the carbon atoms in the resulting growth layer at higher temperatures and then, in a further intermediate step, cooling the system below the solubility of carbon in the material, which would allow carbon to precipitate, especially also at the surface, forming the graphene layer.

[0078] In another embodiment, carbon is not present in the growing layer and is supplied to the growing layer from the outside by a suitable deposition process, such as, for example, molecular beam epitaxy, PVD or CVD processes.

[0079] In an extended form of the third process step, a further layer is deposited on the transfer layer or on the graphene layer, which further layer serves in particular to optimize the contact in the subsequent process steps. This layer is therefore called a contact layer. The contact layer is in particular an oxide layer, preferably made of the same material as the contact layer of the product substrate.

[0080] Layer Transfer Process The layer transfer process is described in detail below.

[0081] In a first process step, the carrier substrate is aligned to the product substrate, the alignment being performed mechanically and / or optically, preferably using a specific alignment facility, in which the carrier substrate and the product substrate are aligned to each other by means of alignment marks.

[0082] In a second process step, the carrier substrate is brought into contact with the product substrate, either directly over the entire surface or by point contact, preferably using a fusion bonding system.

[0083] In a third process step, the carrier base substrate is separated from the growth layer along the release layer by means of a release method, in particular a laser. The growth layer then acts as a barrier for the graphene layer. The growth layer is preferably designed to be particularly non-destructive so that the release method used, in particular a laser, does not damage the transfer layer or the graphene layer. This makes the layer structure a novel feature in contrast to the prior art. The individual possible release methods are explained in detail below.

[0084] Peeling Method A first preferred exfoliation method uses electromagnetic radiation, in particular a laser. The carrier base substrate is at least partially transparent to electromagnetic radiation, while the exfoliation layer preferably exhibits maximum absorption. The growth layer is also absorbent to electromagnetic radiation, so that the growth layer prevents photons that are not absorbed by the exfoliation layer from penetrating into the next transfer layer or graphene layer.

[0085] The release layer preferably has high solubility in water, therefore the use of a microwave source to locally introduce heat by volumetric heating of the water would be a further possible option for release.

[0086] A second, less preferred, exfoliation method involves the application of electric and / or magnetic fields to the exfoliation layer, where the exfoliation layer is designed such that above a certain electric and / or magnetic field strength, a physical effect occurs that leads to the exfoliation of the exfoliation layer, or at least to a reduction in adhesion of the exfoliation layer to the growth layer and / or first substrate.

[0087] The third, least preferred, release method uses heat. In that case, the heat source is preferably present on the surface of the carrier base substrate. Preferably, a heat sink, in particular an active cooling body, is present on the surface of the product base substrate. The heat is preferably transported to the release layer, where the separation of the carrier substrate or release layer from the growth layer occurs. The thermal load of the transfer layer or graphene layer is preferably minimal. Therefore, in this case, the growth layer is preferably designed to have low thermal conductivity and ideally low heat accumulation. This embodiment is less preferred because the occurrence of a temperature increase leads to a thermal expansion of each layer of the layer system. In general, each layer has a different thermal expansion coefficient. If the release layer is polymer-based, the thermal stresses can indeed be relieved by flow, but the other layers of the layer system are much more susceptible to thermal stresses.

[0088] In a fourth process step, the grown layer can be treated in different ways.

[0089] In a first variant of the fourth process step, the growth layer is simply removed to expose the transfer layer or graphene layer. This removal can be carried out by chemical and / or physical processes. Removal of the growth layer is essential in particular if the transfer layer or graphene layer must only be structured at a point after the layer transfer.

[0090] In a second variant of the fourth process step, the growth layer is structured by a number of process steps so that it serves as an etching mask for the underlying transfer layer or graphene layer. After etching of the transfer layer or graphene layer, the structured etching layer can be completely removed since it is no longer needed as an etching mask.

[0091] In a third variant of the fourth process step, the growth layer itself is left as a functional layer above the transfer layer or graphene layer and is structured if necessary. However, since in most cases the growth layer is a conductor, i.e. an electrically conductive, especially metal, layer, which would short-circuit the possibly structured transfer layer or graphene layer, especially over the entire surface, in most cases the growth layer is removed.

[0092] In another embodiment, the peeling method is a simple mechanical separation. The substrates are fixed in such a way that when acting on at least one of the substrates, a stress, preferably a tensile stress, is generated between the peeling layer and the growth layer, which separates the peeling layer from the growth layer. Naturally, it would be more advantageous if the separation occurs between the transfer layer and the growth layer. In this case, the peeling layer can be omitted completely. Furthermore, the growth layer does not have to be removed from the transfer layer in a further process step. However, this preferred case rarely occurs, since the adhesive forces between the transfer layer and the growth layer are usually very strong. The force used to separate the substrates from each other is preferably applied over a small area, in particular in a point-like manner, in particular at least at one point on the periphery of the substrate. The force is then greater than 0.01 N, preferably greater than 0.1 N, more preferably greater than 1 N, very preferably greater than 10 N, most preferably greater than 100 N. Mechanical separation can be performed particularly easily if a predetermined break point is generated in the peeling layer. The predetermined breakage can be created using a blade, particularly a razor blade, a wire, or a nozzle that forces a fluid against the release layer.

[0093] However, it is particularly preferred to use electromagnetic radiation for the delamination. In particular, the preferred delamination method is to use a laser as the delamination means. In this case, it is desirable for the carrier substrate to have as high a transparency, more precisely a transmittance, as possible for the electromagnetic radiation used. The carrier substrate is preferably a glass substrate, most preferably a sapphire substrate. The transparency is preferably expressed as a transmittance, which indicates the ratio of the transmitted radiation to the irradiated radiation. However, the transmittance is not an inherent property of the material, since it depends on the thickness of the irradiated object. The transmittance values ​​are therefore given for a unit length of 1 cm. For a selected thickness of 1 cm and for the respective selected wavelength, the material has in particular a transmittance of more than 10%, preferably more than 20%, even more preferably more than 50%, very preferably more than 75% and most preferably more than 99%.

[0094] Further advantages, features and details of the invention will become apparent from the following description of preferred embodiments and with the aid of the drawings. [Brief description of the drawings]

[0095] [Figure 1] 1 shows a schematic representation of a first embodiment of a carrier substrate according to the invention; [Diagram 2] FIG. 2 shows a schematic representation of a second embodiment of a carrier substrate; [Diagram 3] FIG. 1 is a diagram illustrating a first embodiment of a product substrate. [Figure 4] FIG. 2 is a diagram illustrating a second embodiment of a product substrate. [Diagram 5] FIG. 13 is a diagram illustrating a third embodiment of a product substrate. [Figure 6a] FIG. 2 shows a schematic diagram of a first process step of a first method according to the invention. [Figure 6b] FIG. 2 shows a schematic diagram of a second process step of the first method according to the invention. [Figure 6c] FIG. 2 shows a schematic diagram of a third process step of the first method according to the invention. [Figure 6d] FIG. 2 shows a schematic diagram of a fourth process step of the first method according to the invention.

[0096] In the figures, identical components or components having identical functions are denoted by the same reference numerals.

[0097] In the figures, unnecessary components, in particular the illustration of the substrate holder, are completely omitted, since they are not necessary for the description of the process. Moreover, the drawings and the parts shown are not to scale. The fact that the illustrations are not to scale makes the drawings easier to understand. In particular, the transfer layer 6, which will be described below by way of example in the form of a graphene layer 6, is shown very thick, although it is only a monoatomic layer. Moreover, the protective layer 5 or growth layer 5 is shown as one layer in the figures. This is a preferred embodiment, in which the protective layer 5 is designed as a growth layer 5 in addition to protection. In any case, a protective layer 5 is provided. However, it is also conceivable to arrange an additional growth layer on the protective layer 5 in order to generate the transfer layer 6. However, it is preferred that the layer having a protective function is also suitable for generating or growing the transfer layer 6.

[0098] FIG. 1 shows a carrier substrate 1 with a produced layer system in a first embodiment. This layer system consists of a release layer 4 applied on a carrier base substrate 3. Present on the release layer 4 is a growth layer 5 or a protective layer 5. The growth layer 5 is preferably itself transferred onto the release layer 4 by a layer transfer process or deposited directly on the release layer 4 by a physical or chemical deposition process. On the growth layer 5 a transfer layer 6 or a graphene layer 6 is produced. The thicknesses of the carrier base substrate 3, the release layer 4, the growth layer 5 and especially the graphene layer 6 are not shown to scale. In particular the graphene layer 6 as a monoatomic layer is very thin and should in particular only be shown as a line. However, for better illustration the scale has been omitted.

[0099] 2 shows a carrier substrate 1' with the produced layer system in a second embodiment, which further comprises a contact layer 8 deposited or transferred onto the transfer layer 6 or graphene layer 6.

[0100] 3 shows the product substrate 2 in the first embodiment. The product substrate 2 in particular consists of a product base substrate 7 only.

[0101] 4 shows a product substrate 2' in a second embodiment. The product substrate 2' consists of a product base substrate 7 and a contact layer 8 deposited or transferred thereon. The contact layer 8 is preferably a dielectric layer, most preferably a silicon oxide layer.

[0102] FIG. 5 shows a product substrate 2″ in a third embodiment. The product substrate 2″ consists of a product base substrate 7′, on which, inter alia, functional components 9 have already been manufactured. Preferably, a contact layer 8′ is deposited on the product base substrate 7′. This contact layer 8′ preferably comprises electrically conductive vias 10, which are intended in particular for connecting the functional components 9 with a transfer layer or graphene layer (not shown) to be transferred. This embodiment could also be envisaged to omit the contact layer 8′. In this case, the vias 10 are also absent and the transfer layer or graphene layer (not shown) to be transferred would be in direct contact with the contact points of, inter alia, the functional components 9 (not shown). The contact layer 8′ is also preferably a dielectric layer, most preferably a silicon oxide layer.

[0103] The following figures 6a to 6d show a first method or process for transferring a transfer layer exemplarily with a carrier substrate 2' and a product substrate 2'. However, this process can be carried out with any arbitrary combination of carrier substrates and product substrates, in particular with carrier substrates and / or product substrates not explicitly shown, as long as the layer system consisting of the release layer 4, the growth layer 5 and the transferred transfer layer 6 or graphene layer 6 is present in this order in particular.

[0104] Furthermore, in the following drawings, the product substrate 2' is illustrated on the upper side and the carrier substrate 1' is illustrated on the lower side. It is also possible that the carrier substrate 1' is on the upper side and the product substrate 1' is on the lower side. For the sake of clarity, the substrate holder, bonding device, and alignment device are not illustrated.

[0105] FIG. 6a shows a first process step of a first method or process for transferring a transfer layer, in which a product substrate 2′ consisting of a product base substrate 7 and a contact layer 8 is aligned with respect to a carrier substrate 1. The contact layer 8 is preferably an oxide, most preferably silicon oxide. The carrier substrate 1 consists of a carrier base substrate 3, a release layer 4, a growth layer 5 and a transfer layer 6 or graphene layer 6 to be transferred. How the graphene layer 6 is generated or transferred onto the growth layer 5 is not relevant for understanding the process and will therefore not be described in detail. The alignment can be mechanical and / or optical. In the case of optical alignment, in particular alignment marks (not shown) are present on the product substrate 2′ and on the carrier substrate 1.

[0106] Fig. 6b shows the second process step of the first process, whereby the contacting of the carrier substrate 1 with the product substrate 2' is performed. How the contacting is performed exactly is not relevant for the process and is therefore not shown in the figures. However, the contacting is preferably performed by a device which bends at least one of the two substrates 1, 2'. The contacting process is therefore preferably performed using a fusion bonding installation. In a very particularly preferred embodiment of this process, the particularly upper product substrate 2' is bent, while the particularly lower carrier substrate 1 is clamped all over.

[0107] FIG. 6c shows the third process step of the first process. The peeling means 11 is applied to the peeling layer 4. The peeling means 11 is preferably a laser. The peeling means is applied to the peeling layer 4, preferably via the carrier base substrate 3. In so doing, the growth layer 5 serves as a protective shield for the graphene layer 6 behind it. Since the graphene layer 6 is a monoatomic layer, it can be destroyed by the peeling means 11, which has a high strength. The growth layer 5, which is preferably also used to generate the graphene layer 6, is therefore used as a protective shield. The growth layer 5 must therefore be designed in such a way that the respectively used peeling means 11 is shielded in the best possible way during the peeling process or the influence on the transfer layer 6 resulting from the peeling means 11 is at least very significantly reduced. If the peeling means 11 is a laser, it is desirable for the growth layer 5 to have the lowest possible transmittance for the photons of the laser 11. If the peeling means 11 is heat, for example introduced by a heat source, it is desirable for the growth layer 5 to have the lowest possible thermal conductivity in order to make the transport of heat to the graphene layer 6 difficult.

[0108] It is clear to the skilled person that between the release layer 4 and the growth layer 5 there may be any number of other layers that can play the specific role of protecting the transfer layer 6. It is therefore conceivable to insert a further layer between the release layer 4 and the growth layer 5, which absorbs the laser light or heat of the release means 11 very well. However, for the sake of simplicity, this property is summarized in a single growth layer 5, so as not to complicate the explanation and the illustration. In particular, it is advantageous that the growth layer 5, which is preferably used for the growth of the graphene layer 6, also serves at the same time as the protection layer of the release means 11 used. Thereby, a very cost-effective process can be carried out, since no costly further layers have to be deposited. A further advantage is that the growth layer 5 is particularly preferably a metal layer, very preferably a nickel layer. As is well known, metals are very good infrared absorbers. The most preferred release means 11 is a laser, preferably an infrared laser. In this special case, the metal growth layer 11 can therefore simultaneously function as a growth layer 5 and as a protection layer due to its solid-state properties. If the delamination means 11 is a heat source, the metal growth layer 5 will of course not be optimal due to its relatively high thermal conductivity. In this case, it is preferable to insert a further layer between the growth layer 5 and the delamination layer 4, in particular a layer with low thermal conductivity.

[0109] Fig. 6d shows a first variant of the fourth process step of the first process, where the growth layer 5 (not shown) to be transferred has also already been removed. Thus, a transfer layer 6 or graphene layer 6 is obtained on the product substrate 2e, which is the final product of the process. The product substrate 2e, in particular the transferred graphene layer 6, can then be further processed in further process steps. The two other variants of the use of the growth layer 5 already mentioned are not shown here diagrammatically, since no further conclusions can be drawn from them regarding the actual method. [Explanation of symbols]

[0110] 1 Carrier Board 2,2',2'',2e product board 3 Carrier base board 4. Peel layer 5 Growth layer, protective layer 6 Transfer layer, graphene layer 7,7' Product Base Board 8,8' contact layer 9 Functional Units 10 Via 11 Peeling means

Claims

1. A carrier substrate (1) for transferring a transfer layer (6) from a carrier substrate (1) to a product substrate (2, 2', 2'', 2e), said carrier substrate (1) comprising at least the following layers in the following order: - Carrier base substrate (3) a protective layer (5), and - the transfer layer (6) 4. The carrier substrate (1) according to claim 1, characterized in that the transfer layer (6) is grown on the protective layer (5).

2. The carrier substrate (1) according to claim 1, wherein the transfer layer (6) is a graphene layer (6).

3. 3. The carrier substrate (1) according to claim 1 or 2, wherein the roughness of the protective layer (5), in particular on the surface facing the transfer layer (6), is less than 100 μm, preferably less than 10 μm, more preferably less than 1 μm, very preferably less than 100 nm, most preferably less than 10 nm.

4. The carrier substrate (1) according to any one of claims 1 to 3, wherein the transfer layer (6) comprises at least one release layer (4) arranged between the carrier base substrate (3) and the protective layer (5).

5. The carrier substrate (1) according to any one of claims 1 to 4, wherein the transfer layer (6) is peelable from the carrier base substrate (3) together with the protective layer (5) by a peeling means (11) acting on the release layer (4) and / or the peeling area.

6. The carrier substrate (1) according to any one of the preceding claims, wherein the protective layer (5) consists of a material in which carbon is soluble.

7. 7. The carrier substrate (1) according to any one of the preceding claims, wherein the protective layer (5) is designed to be opaque to electromagnetic radiation.

8. 8. The carrier substrate (1) according to claim 1, further comprising a contact layer (8, 8') arranged on the side of the transfer layer (6) facing away from the protective layer (5), the contact layer (8, 8') being made of a dielectric material, preferably silicon oxide.

9. The carrier substrate (1) according to any one of the preceding claims, wherein the protective layer (5) is a monocrystalline metal layer, preferably made of nickel.

10. A method for producing a carrier substrate (1), in particular for transferring a transfer layer (6) from the carrier substrate (1) according to any one of claims 1 to 9 to a product substrate (2, 2', 2'', 2e), comprising: i) providing a carrier base substrate (3); ii) applying a protective layer (5) onto said carrier base substrate (3); iii) growing a transfer layer (6), in particular a graphene layer, on said protective layer (5); The method comprising:

11. The method of claim 10, wherein the protective layer (5) is recrystallized prior to the growth of the transfer layer (6) in step iii).

12. 12. The method according to claim 10 or 11, wherein before the application of the protective layer (5) in step ii), the carrier base substrate (3) is coated with a release layer (4) and the protective layer (5) is applied on the release layer (4).

13. 13. The method according to any one of claims 10 to 12, further comprising depositing a contact layer (8, 8') on the side of the transfer layer (6) opposite the protective layer (5).

14. 14. A method for transferring a transfer layer (6) from a carrier substrate (1) produced by a method according to any one of claims 1 to 9 and / or any one of claims 10 to 13 to a product substrate (2, 2', 2'', 2e), comprising: - bringing the carrier substrate (1) into contact with the product substrate (2, 2', 2'', 2e) such that the transfer layer (6) faces the product substrate (2, 2', 2'', 2e), wherein at least one peeling means (11) then acts on the carrier substrate (1) to peel off the transfer layer (6) together with the protective layer (5) from the carrier base substrate (3).

15. 15. The method for transferring a transfer layer (6) according to claim 14, characterized in that the carrier substrate (1) is brought into contact with the product substrate (2, 2', 2'', 2e) via a contact layer (8, 8') applied on the transfer layer (6) or the carrier substrate (1) is brought into contact with a further contact layer (8, 8') applied on a product base substrate (7, 7') of the product substrate (2, 2', 2'', 2e) via a contact layer (8, 8') applied on the transfer layer (6).

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