Plasma processing apparatus

Abstract

To accelerate an exhaust speed of gas.SOLUTION: There is provided a plasma processing apparatus that processes a substrate with plasma, the plasma processing apparatus having: a plasma processing chamber; a gas supply mechanism that supplies a processing gas from a gas introduction port; a plasma generation unit that generates plasma from the processing gas; a substrate support part that is arranged below the gas supply mechanism and has the substrate placed thereon; an exhauster that is connected with a gas exhaust port and exhausts the processing gas; and a plurality of grooves that is formed in an inner face of the plasma processing chamber in a space having at least the gas exhaust port, the plurality of grooves being inclined in the same direction with respect to a circumferential direction of the inner face and arranged equally in the circumferential direction.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present disclosure relates to a plasma processing apparatus. [Background technology]

[0002] For example, Patent Document 1 discloses a plasma processing system including a capacitively coupled plasma processing device and a control unit. The plasma processing device has a shower head above a substrate support and is configured to introduce at least one processing gas into a plasma processing space from the shower head. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2022-117670 A Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique that can increase the pumping speed of gas. [Means for solving the problem]

[0005] According to one aspect of the present disclosure, there is provided a plasma processing apparatus for processing a substrate with plasma, the plasma processing apparatus comprising: a plasma processing chamber; a gas supply mechanism for supplying a processing gas from a gas inlet; a plasma generation unit for generating plasma from the processing gas; a substrate support unit arranged below the gas supply mechanism for supporting the substrate; an exhaust unit connected to a gas exhaust port for exhausting the processing gas; and a plurality of grooves formed on an inner surface of the plasma processing chamber in a space having at least the gas exhaust port, the plurality of grooves being inclined in the same direction relative to a circumferential direction of the inner surface and being evenly arranged in the circumferential direction. Effect of the Invention

[0006] According to one aspect, the gas exhaust speed can be increased. [Brief description of the drawings]

[0007] [Figure 1] 1 is a diagram showing an example of the configuration of a plasma processing system according to an embodiment; [Diagram 2] 1 is a diagram showing an example of the configuration of a capacitively coupled plasma processing apparatus according to an embodiment; [Diagram 3] FIG. 4 is a perspective view showing an example of a configuration of a groove in an exhaust space according to an embodiment; [Figure 4] FIG. 13 illustrates a modified example of a groove according to an embodiment. [Diagram 5] FIG. 4 is a diagram showing an example of a swirling flow of a process gas in an exhaust space according to an embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, an embodiment of the present disclosure will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and duplicated descriptions may be omitted.

[0009] [Plasma processing system] FIG. 1 is a diagram for explaining a configuration example of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing device 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing device 1 is an example of a substrate processing device. The plasma processing device 1 includes a plasma processing chamber 10, a substrate support unit 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space, and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20 described later, and the gas exhaust port is connected to an exhaust system 40 described later. The substrate support unit 11 is disposed in the plasma processing space, and has a substrate support surface for supporting a substrate.

[0010] The plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be a capacitively coupled plasma (CCP), an inductively coupled plasma (ICP), an electron-cyclotron-resonance plasma (ECR plasma), a helicon wave plasma (HWP), a surface wave plasma (SWP), or the like. Also, various types of plasma generating units may be used, including an alternating current (AC) plasma generating unit and a direct current (DC) plasma generating unit. In one embodiment, the AC signal (AC power) used in the AC plasma generating unit has a frequency in the range of 100 kHz to 10 GHz. Thus, the AC signal includes a radio frequency (RF) signal and a microwave signal. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0011] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to execute various steps described in the present disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to execute various steps described herein. In one embodiment, a part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 is realized, for example, by a computer 2a. The processing unit 2a1 may be configured to perform various control operations by reading a program from the storage unit 2a2 and executing the read program. This program may be stored in the storage unit 2a2 in advance, or may be acquired via a medium when necessary. The acquired program is stored in the storage unit 2a2 and is read from the storage unit 2a2 by the processing unit 2a1 and executed. The medium may be various storage media readable by the computer 2a, or may be a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a random access memory (RAM), a read only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0012] The following describes a configuration example of a capacitively coupled plasma processing apparatus as an example of the plasma processing apparatus 1. Fig. 2 is a diagram for explaining the configuration example of a capacitively coupled plasma processing apparatus.

[0013] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support 11 is disposed in the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a part of a ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from a housing of the plasma processing chamber 10.

[0014] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting the substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of the substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.

[0015] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 may function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that other members surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member, may have the annular region 111b. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. Also, at least one RF / DC electrode coupled to an RF power source 31 and / or a DC power source 32 described later may be disposed in the ceramic member 1111a. In this case, the at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal described later is supplied to the at least one RF / DC electrode, the RF / DC electrode is also called a bias electrode. Note that the conductive member of the base 1110 and the at least one RF / DC electrode may function as multiple lower electrodes. Also, the electrostatic electrode 1111b may function as a lower electrode. Thus, the substrate support 11 includes at least one lower electrode.

[0016] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0017] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow passage 1110a, or a combination thereof. A heat transfer fluid such as a brine or a gas flows through the flow passage 1110a. In one embodiment, the flow passage 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. The substrate support 11 may also include a heat transfer gas supply configured to supply a heat transfer gas to a gap between the back surface of the substrate W and the central region 111a.

[0018] The shower head 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The shower head 13 also includes at least one upper electrode. Note that the gas introduction unit may include, in addition to the shower head 13, one or more side gas injectors (SGI) attached to one or more openings formed in the side wall 10a. The shower head 13 is an example of a gas supply mechanism that supplies processing gas from the gas inlets.

[0019] The gas supply 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply 20 is configured to supply at least one process gas from a respective gas source 21 through a respective flow controller 22 to the showerhead 13. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply 20 may include at least one flow modulation device to modulate or pulse a flow rate of the at least one process gas.

[0020] The power source 30 includes an RF power source 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power source 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This causes a plasma to be formed from at least one processing gas supplied to the plasma processing space 10s. Thus, the RF power source 31 can function as at least a part of the plasma generating unit 12. In addition, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, and ion components in the formed plasma can be attracted to the substrate W.

[0021] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit, and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate a plurality of source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0022] The second RF generating unit 31b is coupled to at least one lower electrode via at least one impedance matching circuit and configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generating unit 31b may be configured to generate a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. Also, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0023] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to at least one lower electrode and configured to generate a first DC signal. The generated first DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 32b is connected to at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0024] In various embodiments, the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular or combination of these pulse waveforms. In one embodiment, a waveform generator for generating a sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode. Thus, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. When the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses may have a positive polarity or a negative polarity. Also, the sequence of voltage pulses may include one or more positive polarity voltage pulses and one or more negative polarity voltage pulses in one period. The first and second DC generating units 32a, 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided in place of the second RF generating unit 31b.

[0025] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is adjusted by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0026] An exhaust space 10u below the substrate support surface of the substrate support 11 is provided below the plasma processing space 10s defined by the showerhead 13, the sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing space 10s is the space within the plasma processing chamber 10 above the substrate support surface, and the exhaust space 10u is the space within the plasma processing chamber 10 below the substrate support surface.

[0027] When the processing gas in the plasma processing chamber 10 is exhausted to the outside from the gas exhaust port 10e, the conductance may become poor in the exhaust space 10u in the plasma processing chamber 10. In this case, the gas may remain in the plasma processing chamber 10. If the gas remains, the substrate processing environment in the plasma processing chamber 10 may deteriorate, for example, by reacting with other gases. In addition, since it takes time for the gas in the plasma processing chamber 10 to be exhausted to the outside, the operating time of the plasma processing apparatus 1 for processing the substrate W is reduced, thereby decreasing the throughput.

[0028] [groove] Therefore, the plasma processing apparatus 1 has a plurality of grooves for increasing the gas exhaust speed and improving the gas exhaust efficiency. The grooves will be described with reference to Fig. 3. Fig. 3 is a perspective view showing an example of the configuration of the grooves 3 in the exhaust space 10u according to one embodiment. For convenience of explanation, Fig. 3 omits the illustration of the substrate support portion 11.

[0029] In this embodiment, eight grooves 3 are formed on the inner side surface 10a1 of the plasma processing chamber 10 in the exhaust space 10u. The grooves 3 may be formed on the bottom surface of the plasma processing chamber 10. The eight grooves 3 are inclined at the same angle in the same direction with respect to the circumferential direction of the inner side surface 10a1 and are evenly arranged in the circumferential direction. In FIG. 3, eight grooves 3 of the same shape are formed at equal intervals in the circumferential direction, but the number of grooves 3 is not limited to this. It is preferable to increase the number of grooves 3 as the diameter of the plasma processing chamber 10 increases. This can improve the gas exhaust efficiency.

[0030] The eight grooves 3 may be formed on the inner side surface 10a1 of the plasma processing chamber 10 in a space having at least the gas exhaust port 10e (see FIG. 2). The space having at least the gas exhaust port 10e may include an exhaust space 10u below the substrate supporting surface of the substrate supporting part 11. The space having at least the gas exhaust port 10e may further include a plasma processing space 10s in addition to the exhaust space 10u.

[0031] In this embodiment, the space having at least the gas exhaust port 10e is the exhaust space 10u. The eight grooves 3 extend from the upper end to the lower end of the inner side surface 10a1 of the plasma processing chamber 10 in the exhaust space 10u below the substrate support surface while inclining, and serve as a passage for exhausting gas. The inclination angle of the eight grooves 3 is the same, for example, inclined at 45°. However, the inclination angle of the grooves 3 is not limited to 45°. In addition, the grooves 3 may be inclined obliquely in either a clockwise or counterclockwise direction with respect to the inner side surface 10a1.

[0032] However, the eight grooves 3 are not limited to being formed from the upper end (the height of the substrate support surface) to the lower end (the height of the bottom surface of the plasma processing chamber 10) of the inner side surface 10a1 of the plasma processing chamber 10 in the exhaust space 10u. The eight grooves 3 may start below the upper end of the inner side surface 10a1. The eight grooves 3 may end above the height of the bottom surface of the plasma processing chamber 10. The eight grooves 3 may be formed from the inner side surface 10a1 of the plasma processing chamber 10 above the substrate support surface. The eight grooves 3 may be, for example, slits, recesses, etc.

[0033] The eight grooves 3 form a swirling flow of the processing gas in the exhaust space 10u (see FIG. 5). This increases the gas exhaust speed and the conductance in the exhaust space 10u. As a result, the exhaust efficiency of the gas exhausted from the gas exhaust port 10e can be improved. The gas exhaust port 10e may further have a groove of a shape similar to that of the groove 3. Although one gas exhaust port 10e is provided at the bottom of the plasma processing chamber 10, the present invention is not limited to this, and a plurality of gas exhaust ports 10e may be provided at the bottom of the plasma processing chamber 10. The gas exhaust port 10e may be provided above the bottom of the plasma processing chamber 10 in the exhaust space 10u. In this case, the lower ends of the eight grooves 3 may be formed at a position equal to or higher than the height of the gas exhaust port 10e.

[0034] The eight grooves 3 may have a narrower or wider width. The width of the grooves 3 may be wider at a height farther from the gas exhaust port 10e and narrower at a height closer to the gas exhaust port 10e. In the example of Fig. 3, the width of the grooves 3 is wider at the top and narrower at the bottom. This allows more gas to be taken into the grooves 3 and made easier to exhaust.

[0035] The groove 3 may have height variations in the depth direction. The depth of the groove 3 may be deeper as it moves away from the gas exhaust port 10e and shallower as it moves closer to the gas exhaust port 10e. In the example of Fig. 3, the depth of the groove 3 is deeper at the top and shallower at the bottom. This allows more gas to be taken into the groove 3 and made easier to exhaust. The groove 3 may be wider and deeper at the top and narrower and shallower at the bottom.

[0036] In Fig. 3, the inclination angle of the eight grooves 3 is the same from top to bottom, and the inner side surface 3a and bottom surface 3b of the grooves 3 are flat. However, the shape of the grooves 3 is not limited to this. Other shapes of the grooves 3 will be described with reference to Fig. 4. Fig. 4 is a diagram showing a modified example of the grooves 3 according to one embodiment.

[0037] As shown in Fig. 4(a), the groove 3 is formed on the inner surface 10a1 of the plasma processing chamber 10, and the inner surface 3a of the groove 3 may be flat and the bottom surface 3b may be curved convexly or concavely. In Fig. 4(a), the bottom surface 3b is curved convexly.

[0038] As shown in Fig. 4(b), the inner surface 3c of the groove 3 may be chamfered and have no corners. Since the inner surface 3c of the groove 3 has no corners, the gas flows more efficiently in the groove 3 with less resistance. As a result, the gas exhaust efficiency can be further improved.

[0039] 4(c), the plurality of grooves 3 may have a step 3a3. The step 3a3 faces in a direction different from the inclination direction of the inner sides 3a2, 3a4 of the groove 3. A plurality of steps 3a3 may be formed in one groove 3.

[0040] [Simulation results] The results of a simulation performed under the following conditions using the plasma processing apparatus 1 will be described.

[0041] (Simulation conditions) Chamber pressure: 2.5 Torr (333 Pa) Gas: H2: 500sccm / Ar: 6200sccm Temperature of the chamber inner wall: 80℃ Substrate support temperature: 300℃

[0042] 3 were formed on the inner side surface 10a1 of the plasma processing chamber 10, and these grooves 3 functioned as exhaust paths for H2 gas and Ar gas. As a result, as shown in FIG. 5, a swirling flow F of gas was formed from the exhaust path formed by the eight grooves 3 toward the bottom of the exhaust space 10u.

[0043] [effect] In this manner, according to the plasma processing apparatus 1 of the embodiment, by forming a plurality of grooves 3 having the same inclination angle in the space having at least the gas exhaust port 10e, the gas flow can be made directional, thereby increasing the gas exhaust speed, and thereby shortening the exhaust time (residence time).

[0044] In addition, by improving the exhaust efficiency, it is possible to eliminate the need for a purge process for residual gases and to shorten the time required for gas replacement. It is also possible to shorten the time required for cleaning the inside of the plasma processing chamber 10. This increases the operating rate of the apparatus, enables more substrates to be processed efficiently, and improves throughput.

[0045] Moreover, by providing directionality to the gas flow in the exhaust space 10u, the exhaust load of the exhaust system 40 such as a turbo molecular pump can be reduced. As a result, the life of the exhaust system 40 can be extended and the power supply to the exhaust system 40 can be reduced, thereby achieving energy conservation.

[0046] The above disclosed embodiments include, for example, the following aspects. (Appendix 1) A plasma processing apparatus for processing a substrate with plasma, comprising: a plasma processing chamber; a gas supply mechanism for supplying a process gas from a gas inlet; a plasma generating unit for generating plasma from the processing gas; a substrate support portion disposed below the gas supply mechanism and on which the substrate is placed; an exhaust device connected to the gas exhaust port for exhausting the processing gas; a plurality of grooves formed on an inner surface of the plasma processing chamber in a space having at least the gas exhaust port, the plurality of grooves being inclined in the same direction with respect to a circumferential direction of the inner surface and being evenly spaced in the circumferential direction; The plasma processing apparatus comprises: (Appendix 2) The width of the plurality of grooves is wider as the height increases away from the gas exhaust port and is narrower as the height increases toward the gas exhaust port. 2. The plasma processing apparatus according to claim 1. (Appendix 3) The depth of the plurality of grooves is deeper as the grooves are spaced apart from the gas exhaust port, and is shallower as the grooves are spaced apart from the gas exhaust port. 3. The plasma processing apparatus according to claim 1 or 2. (Appendix 4) The inner walls of the plurality of grooves are chamfered. 4. The plasma processing apparatus according to claim 1, wherein the plasma processing apparatus comprises: (Appendix 5) The plurality of grooves have steps. 5. The plasma processing apparatus according to claim 1, (Appendix 6) The inner surfaces of the plurality of grooves are flat surfaces. 6. The plasma processing apparatus according to claim 1, (Appendix 7) The inner surfaces of the plurality of grooves are curved surfaces. 6. The plasma processing apparatus according to claim 1, (Appendix 8) the space having at least the gas exhaust port includes an exhaust space below a substrate support surface of the substrate support part, 8. The plasma processing apparatus according to claim 1, (Appendix 9) the space having at least the gas exhaust port includes a plasma processing space on a substrate support surface of the substrate support; 9. The plasma processing apparatus according to claim 8. (Appendix 10) The plurality of grooves extend obliquely from an upper end to a lower end of an inner surface of the plasma processing chamber in the exhaust space. 9. The plasma processing apparatus according to claim 8. (Appendix 11) A swirling flow of the processing gas is formed in the exhaust space by the plurality of grooves. 11. The plasma processing apparatus according to any one of claims 8 to 10.

[0047] The present invention is not limited to the configurations shown here, such as combinations of the configurations and other elements in the above-mentioned embodiments. These points can be changed without departing from the spirit of the present invention, and can be appropriately determined according to the application form. In addition, the matters described in the multiple embodiments can be configured in other ways without contradiction, and can be combined without contradiction. [Explanation of symbols]

[0048] 1...plasma processing apparatus, 2...control section, 3...groove, 10...plasma processing chamber, 10e...gas exhaust port, 11...substrate support section, 13...shower head, 13c...gas inlet, shower head, 20...gas supply section, 40...exhaust system

Claims

1. A plasma processing apparatus for processing a substrate with plasma, comprising: a plasma processing chamber; a gas supply mechanism for supplying a process gas from a gas inlet; a plasma generating unit for generating plasma from the processing gas; a substrate support portion disposed below the gas supply mechanism and on which the substrate is placed; an exhaust device connected to the gas exhaust port for exhausting the processing gas; a plurality of grooves formed on an inner surface of the plasma processing chamber in a space having at least the gas exhaust port, the plurality of grooves being inclined in the same direction with respect to a circumferential direction of the inner surface and being evenly spaced in the circumferential direction; The plasma processing apparatus comprises:

2. The width of the plurality of grooves is wider as the height increases away from the gas exhaust port and is narrower as the height increases toward the gas exhaust port. The plasma processing apparatus according to claim 1 .

3. The depth of the plurality of grooves is deeper as the grooves are spaced apart from the gas exhaust port, and is shallower as the grooves are spaced apart from the gas exhaust port. The plasma processing apparatus according to claim 1 .

4. The inner walls of the plurality of grooves are chamfered. The plasma processing apparatus according to any one of claims 1 to 3.

5. The plurality of grooves have steps. The plasma processing apparatus according to any one of claims 1 to 3.

6. The inner surfaces of the plurality of grooves are flat surfaces. The plasma processing apparatus according to any one of claims 1 to 3.

7. The inner surfaces of the plurality of grooves are curved surfaces. The plasma processing apparatus according to any one of claims 1 to 3.

8. the space having at least the gas exhaust port includes an exhaust space below a substrate support surface of the substrate support part, The plasma processing apparatus according to any one of claims 1 to 3.

9. the space having at least the gas exhaust port includes a plasma processing space on a substrate support surface of the substrate support; The plasma processing apparatus according to claim 8 .

10. The plurality of grooves extend obliquely from an upper end to a lower end of an inner surface of the plasma processing chamber in the exhaust space. The plasma processing apparatus according to claim 8 .

11. A swirling flow of the processing gas is formed in the exhaust space by the plurality of grooves. The plasma processing apparatus according to claim 8 .

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