Capacitor and manufacturing method for the same

Abstract

To provide a capacitor with high capacitance, and a manufacturing method for the same.SOLUTION: A capacitor according to one aspect includes: a substrate; a first capacitor part existing on the substrate; and a second capacitor part existing on the first capacitor part. The first capacitor part includes: a first insulating layer including a plurality of trenches; a first electrode existing on the first insulating layer; a dielectric layer existing on the first electrode; and a second electrode existing on the dielectric layer.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to a capacitor and a method for manufacturing the same. [Background technology]

[0002] Electronic components used in electronic devices include capacitors, inductors, piezoelectric elements, varistors, thermistors, etc. Among such ceramic electronic components, multilayer capacitors have the advantages of being small, having a high capacity, and being easy to mount, and therefore can be used in various electronic devices.

[0003] For example, the stacked capacitor can be mounted on substrates of various electronic products such as imaging devices such as liquid crystal display (LCD), plasma display panel (PDP), and organic light-emitting diode (OLED), computers, personal portable terminals, and smartphones, and can be used as a chip-type capacitor that charges and discharges electricity.

[0004] In recent years, the trend toward smaller and thinner electronic products has led to an increased demand for capacitors with higher capacitance than conventional stacked capacitors. Summary of the Invention [Problem to be solved by the invention]

[0005] At least one of the embodiments is directed to providing a capacitor having a high capacitance and a method for manufacturing the same.

[0006] However, the problems to be solved by the embodiments of the present invention are not limited to the above problems, and can be variously expanded within the scope of the technical ideas included in the present invention. [Means for solving the problem]

[0007] A capacitor according to one aspect may include a substrate; a first capacitor portion located on the substrate; and a second capacitor portion located on the first capacitor portion, the first capacitor portion including a first insulating layer having a plurality of trenches; a first electrode located on the first insulating layer; a dielectric layer located on the first electrode; and a second electrode located on the dielectric layer.

[0008] The second capacitor portion may include a second insulating layer located on the first capacitor portion; a first plate-shaped electrode located inside the second insulating layer and having a plate-shaped structure; a second plate-shaped electrode located inside the second insulating layer and having a plate-shaped structure; and a plate-shaped dielectric layer located between the first plate-shaped electrode and the second plate-shaped electrode.

[0009] The semiconductor device may further include an interlayer connection portion connecting the first plate electrode and the second electrode.

[0010] Two first plate electrodes may be provided and positioned at a distance from each other, and the interlayer connection portion may be positioned between one of the two first plate electrodes that is positioned adjacent to the substrate and the second electrode.

[0011] The second plate electrode may be located between two of the first plate electrodes.

[0012] The second plate electrodes may be provided in two numbers and positioned spaced apart from each other.

[0013] The two second plate electrodes may be connected by an electrode connection portion.

[0014] The first plate-shaped electrode and the second plate-shaped electrode may be provided in a plurality of electrodes, which may be stacked with the plate-shaped dielectric layer therebetween.

[0015] The semiconductor device may further include a first external electrode located on the second insulating layer and connected to the first electrode and the second plate electrode; and a second external electrode located on the second insulating layer and connected to the second electrode and the first plate electrode.

[0016] The semiconductor device may further include a first external connection portion connecting the first external electrode and the second plate electrode; and a second external connection portion connecting the second external electrode and the first plate electrode.

[0017] The semiconductor device may further include a conductive layer located within the first insulating layer and connected to the first electrode.

[0018] The first external connection portion may be connected to the conductive layer.

[0019] The first capacitor unit may be located in a plurality of regions on the substrate, and at least one second capacitor unit may be located on each of the first capacitor units.

[0020] The semiconductor device may further include a conductive layer located within the first insulating layer and connected to all of the first electrodes included in the plurality of first capacitor units.

[0021] The semiconductor device may further include a plurality of first external electrodes located on the second capacitor portion; a plurality of second external electrodes located on the second capacitor portion; and a plurality of first external connection portions in direct contact with and connected to the conductive layer and each of the plurality of first external electrodes.

[0022] Each of the second capacitor units may be connected to at least one of the second external electrodes.

[0023] According to another aspect, a method for manufacturing a capacitor may include forming a first insulating layer on a substrate; forming a trench in the first insulating layer; forming a first electrode, a dielectric layer, and a second electrode in the trench to form a first capacitor section; and forming a second capacitor section on the first capacitor section, the second capacitor section having a first plate electrode and a second plate electrode inside a second insulating layer.

[0024] The first plate electrode and the second plate electrode may be formed through a deposition process. Effect of the Invention

[0025] According to at least one of the embodiments, a capacitor having a high capacitance and a manufacturing method thereof can be provided. [Brief description of the drawings]

[0026] [Figure 1] 1 is a diagram illustrating a capacitor according to an embodiment. [Diagram 2] 1 is a diagram illustrating a method of manufacturing a capacitor according to an embodiment; [Diagram 3] 1 is a diagram illustrating a method of manufacturing a capacitor according to an embodiment; [Figure 4] 1 is a diagram illustrating a method of manufacturing a capacitor according to an embodiment; [Diagram 5] 1 is a diagram illustrating a method of manufacturing a capacitor according to an embodiment; [Figure 6] 1 is a diagram illustrating a method of manufacturing a capacitor according to an embodiment; [Figure 7] 1 is a diagram illustrating a method of manufacturing a capacitor according to an embodiment; [Figure 8] 1 is a diagram illustrating a method of manufacturing a capacitor according to an embodiment; [Figure 9] 1 is a diagram illustrating a method of manufacturing a capacitor according to an embodiment; [Figure 10] 13 is a diagram showing a capacitor according to another embodiment. [Figure 11] 13 is a diagram showing a capacitor according to another embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0027] Hereinafter, with reference to the accompanying drawings, an embodiment of the present invention will be described in detail so that a person having ordinary skill in the art to which the present invention belongs can easily carry out the present invention. In the drawings, parts that are not related to the description are omitted in order to clearly explain the present invention, and the same reference numerals are used for the same or similar components throughout the specification. In addition, in the accompanying drawings, some components are exaggerated, omitted, or shown in a schematic manner, and the size of each component does not completely reflect the actual size.

[0028] The accompanying drawings are intended to facilitate understanding of the embodiments disclosed in this specification, and are not intended to limit the technical ideas disclosed in this specification. It should be understood that the accompanying drawings include all modifications, equivalents, or alternatives included in the idea and technical scope of the present invention.

[0029] Terms including ordinal numbers such as first, second, etc. may be used to describe various components, but the components are not limited by the terms. The terms are used only to distinguish one component from another.

[0030] Furthermore, when a part such as a layer, film, region, or plate is said to be "on" or "above" another part, this includes not only the case where it is "directly on" the other part, but also the case where there is another part between them. Conversely, when a part is said to be "directly on" another part, it means that there is no other part between them. Furthermore, being "on" or "above" a reference part means being located above or below the reference part, and does not necessarily mean being located "on" or "above" the opposite direction of gravity.

[0031] Throughout the specification, terms such as "comprise" or "have" are to be understood as specifying the presence of a feature, value, step, operation, component, part, or combination thereof described in the specification, but without precluding the possibility of the presence or addition of one or more other features, values, steps, operations, components, parts, or combinations thereof. Thus, when a part is described as "comprising" a certain element, this means that it can further include other elements, rather than excluding other elements, unless specifically stated to the contrary.

[0032] Additionally, throughout the specification, "on a plane" means when the target part is viewed from above, and "on a cross section" means when the target part is cut vertically and viewed from the side.

[0033] Furthermore, throughout the specification, "connected" does not only mean that two or more components are directly connected, but also that two or more components are indirectly connected through other components, that are not only physically connected but also electrically connected, or that are referred to by different names depending on their location or function but are integrated.

[0034] Throughout the specification, substrate 100 has a planarly wide, cross-sectionally thin structure, and a "planar direction of substrate 100" may refer to a direction parallel to the broad, flat surface of substrate 100, and a "thickness direction of substrate 100" may refer to a direction perpendicular to the broad, flat surface of substrate 100.

[0035] FIG. 1 is a diagram showing a capacitor according to an embodiment.

[0036] Referring to FIG. 1, a capacitor 10 according to an embodiment may include a substrate 100, a first capacitor unit (CA1), a second capacitor unit (CA2), a first external electrode 180, and a second external electrode 190.

[0037] The substrate 100 has a predetermined area. The substrate 100 may be made of an insulating material. In one example, the substrate 100 may be a silicon substrate.

[0038] The first capacitor unit (CA1) is located on the substrate 100. The first capacitor unit (CA1) may include a first insulating layer 110, a first electrode 131, a dielectric layer 132, and a second electrode 133.

[0039] The first insulating layer 110 is located on the substrate 100. The first insulating layer 110 has a preset thickness. The thickness of the first insulating layer 110 may be 1.8 um to 2.2 um. The first insulating layer 110 is made of silicon oxide (SiO 2 ) layer. A conductive layer 111 is located within the first insulating layer 110. The conductive layer 111 may have a plate-like structure. The conductive layer 111 may be made of a metallic material.

[0040] A plurality of trenches 120 are formed in the first insulating layer 110. A lower end of the trenches 120 may be connected to the conductive layer 111. That is, the conductive layer 111 may be exposed to the outside through the trenches 120 before the trenches 120 are filled.

[0041] The first electrode 131 is located on the first insulating layer 110 in a region where the trench 120 is formed. That is, the first electrode 131 may be located on the trench 120. Also, the first electrode 131 may be located on the first insulating layer 110 between the adjacent trenches 120. The first electrode 131 may be made of a metallic material. The first electrode 131 is connected to the conductive layer 111. The first electrode 131 is in direct contact with the conductive layer 111 and may be connected to the conductive layer 111.

[0042] The dielectric layer 132 is located on the first electrode 131. That is, the dielectric layer 132 may be located on the first electrode 131 in the trench 120. Also, the dielectric layer 132 may be located on the first electrode 131 between the adjacent trenches 120. The dielectric layer 132 may be made of ZrO 2-Al 2 O 3 -ZrO 2 The dielectric layer 132 may be formed of a composite layer of ZAZ. 2 O 3 ZrO 2 , HfO 2 The dielectric layer 132 may be made of any one of metal oxides such as Al. 2 O 3 ZrO 2 , HfO 2 It can be formed from a combination of metal oxides such as:

[0043] The second electrode 133 is located on the dielectric layer 132. That is, the second electrode 133 may be located on the dielectric layer 132 of the trench 120. Also, the second electrode 133 may be located on the dielectric layer 132 between adjacent trenches 120. The second electrode 133 is formed to fill the inside of the trench 120, and can prevent a void from being generated inside the trench 120. The second electrode 133 may be made of a metallic material. The second electrode 133 faces the first electrode 131 with the dielectric layer 132 therebetween.

[0044] The second capacitor unit (CA2) is located on the first capacitor unit (CA1). The second capacitor unit (CA2) includes a second insulating layer 140, a first plate electrode 150, a second plate electrode 160 and a plate dielectric layer 170.

[0045] The second insulating layer 140 is located on the first capacitor portion (CA1). The second insulating layer 140 may cover the second electrode 133. The second insulating layer 140 may cover the first insulating layer 110 in an area other than the area where the second electrode 133 is located. The second insulating layer 140 may be made of silicon oxide (SiO 2 ) layer.

[0046] The first plate electrode 150 is located inside the second insulating layer 140. The first plate electrode 150 may have a plate structure having a preset area. The two first plate electrodes 150 may be located spaced apart in the vertical direction. Of the two first plate electrodes 150, the first plate electrode 150 located adjacent to the substrate 100 may be located to face the second electrode 133 in the vertical direction and may be connected to the second electrode 133 via an interlayer connection portion 151. The interlayer connection portion 151 may be located between the first plate electrode 150 and the second electrode 133. The interlayer connection portion 151 may be located between the first plate electrode 150 and the second electrode 133 so as to penetrate the second insulating layer 140, and both ends may be directly contacted and connected to the first plate electrode 150 and the second electrode 133, respectively. A plurality of interlayer connectors 151 may be located between the first plate electrode 150 and the second electrode 133. The interlayer connectors 151 may be provided in a via structure.

[0047] The second plate electrode 160 is located inside the second insulating layer 140. The second plate electrode 160 may have a plate structure having a preset area. The second plate electrode 160 may be located between two first plate electrodes 150. The two second plate electrodes 160 may be located at a distance in the up-down direction. The two second plate electrodes 160 may be connected via an electrode connection portion 161. The electrode connection portion 161 may be located between the second plate electrodes 160. That is, the electrode connection portion 161 may be located between the two second plate electrodes 160 so as to penetrate the second insulating layer 140, and both ends may be connected to the two second plate electrodes 160 located at a distance from each other. A plurality of electrode connection portions 161 may be located between the two second plate electrodes 160. The electrode connection portion 161 may be provided as a via structure.

[0048] The plate-shaped dielectric layer 170 is located between the first plate-shaped electrode 150 and the second plate-shaped electrode 160. The plate-shaped dielectric layer 170 is made of ZrO 2 -Al 2 O 3 -ZrO 2 The plate-shaped dielectric layer 170 can be made of a composite layer of ZAZ.2 O 3 ZrO 2 , HfO 2 The plate-shaped dielectric layer 170 may be made of any one of metal oxides such as Al. 2 O 3 ZrO 2 , HfO 2 The plate-shaped dielectric layer 170 may be provided by the same material as the dielectric layer 132.

[0049] The first external electrode 180 is connected to the first electrode 131 and the second plate electrode 160. The first external electrode 180 may be located on the second capacitor unit (CA2). The first external electrode 180 is located on the second insulating layer 140, and at least a portion of the electrode is exposed to the outside. The first external electrode 180 may be connected to the first electrode 131 and the second plate electrode 160 via the first external connection part 181. The first external connection part 181 may be located between the first external electrode 180 and the conductive layer 111 so as to penetrate the first insulating layer 110 and the second insulating layer 140, and both ends of the first external connection part 181 may be connected to the conductive layer 111 and the first external electrode 180, respectively. One side of the second plate electrode 160 may be directly contacted and connected to the first external connection part 181. The second plate electrode 160 can be connected to a first external connection portion 181 outside a region facing the first plate electrode 150, with the plate dielectric layer 170 therebetween. The first electrode 131 is connected to the first external connection portion 181 through the conductive layer 111. The first external connection portion 181 can be provided by a via structure across the first insulating layer 110 and the second insulating layer 140.

[0050] The second external electrode 190 is connected to the second electrode 133 and the first plate electrode 150. The second external electrode 190 may be located on the second capacitor unit (CA2). The second external electrode 190 is located on the second insulating layer 140, and at least a portion of the electrode is exposed to the outside. The second external electrode 190 may be connected to the first plate electrode 150 through the second external connection part 191. The second external connection part 191 may be located to penetrate a portion of the second insulating layer 140 and may be directly connected to the second external electrode 190 and each of the first plate electrodes 150. At this time, the first plate electrode 150 may be connected to the second external connection part 191 outside the region where the second plate electrode 160 faces, with the plate dielectric layer 170 therebetween. The second electrode 133 is connected to the second external electrode 190 through the first plate electrode 150. The second external connection part 191 may be provided as a via structure.

[0051] The capacitor 10 according to the embodiment includes a first capacitor portion (CA1) and a second capacitor portion (CA2), so that the capacitor 10 has a high capacitance.

[0052] 2 to 9 are diagrams showing a method for manufacturing a capacitor according to an embodiment.

[0053] A method for manufacturing the capacitor 10 according to one embodiment will now be described with reference to FIGS.

[0054] 2, a first capacitor unit CA1 is formed on a substrate 100. Specifically, a first insulating layer 110, a conductive layer 111, and another first insulating layer 110 are alternately formed on the substrate 100. The first insulating layer 110 and the conductive layer 111 may be formed through a deposition process. The first insulating layer 110 may be formed by chemical vapor deposition (CVD), atomic layer deposition (ALD), etc. The conductive layer 111 may be formed by chemical vapor deposition (CVD), atomic layer deposition (ALD), etc.

[0055] Thereafter, a trench 120 is formed in the first insulating layer 110. The trench 120 may be formed through an etching process. The etching process may be performed using a mask. The mask may be formed through photoresist (PR).

[0056] Then, the first electrode 131 is formed on the first insulating layer 110. The first electrode 131 may be formed through a deposition process. The deposition of the first electrode 131 may be performed using chemical vapor deposition (CVD), atomic layer deposition (ALD), or the like.

[0057] Then, the dielectric layer 132 is formed on the first electrode 131. The dielectric layer 132 may be formed through a deposition process. The dielectric layer 132 may be deposited by chemical vapor deposition (CVD), atomic layer deposition (ALD), or the like.

[0058] Thereafter, the second electrode 133 is formed on the dielectric layer 132. The second electrode 133 may be formed through a deposition process. The deposition of the second electrode 133 may be performed using chemical vapor deposition (CVD), atomic layer deposition (ALD), or the like.

[0059] 3, a portion (IM) of the second insulating layer 140 is formed on the first capacitor portion (CA1). Then, the interlayer connection portion 151, the first plate electrode 150, and a portion (VA1) of the first external connection portion 181 are formed on the portion (IM) of the second insulating layer 140. The second insulating layer 140 may be formed through a deposition process. Chemical vapor deposition (CVD), atomic layer deposition (ALD), etc. may be used to form the second insulating layer 140.

[0060] The interlayer connection portion 151, the first plate electrode 150, and a portion (VA1) of the first external connection portion 181 may be formed through a deposition process after etching the second insulating layer 140. The etching process may be performed using a mask. The interlayer connection portion 151, the first plate electrode 150, and a portion (VA1) of the first external connection portion 181 may be formed by chemical vapor deposition (CVD), atomic layer deposition (ALD), etc.

[0061] 4, a plate-shaped dielectric layer 170 is formed on the first plate-shaped electrode 150. The plate-shaped dielectric layer 170 may be formed through a deposition process. The deposition process of the plate-shaped dielectric layer 170 may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), etc. The plate-shaped dielectric layer 170 is not deposited on a portion of the first plate-shaped electrode 150. The region of the first plate-shaped electrode 150 on which the plate-shaped dielectric layer 170 is not deposited may be located at an outer end.

[0062] 5, the second plate electrode 160 is formed on the plate-shaped dielectric layer 170. Then, a portion (VA1) of the first external connection part 181 may be further formed. The second plate electrode 160 and the first external connection part 181 may be formed through a deposition process. The deposition process of the second plate electrode 160 and the first external connection part 181 may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), etc. The second plate electrode 160 is formed so as to contact the portion (VA1) of the first external connection part 181.

[0063] 6, a portion (VA) of the second insulating layer 140 is further formed. Then, an electrode connection portion 161, a second plate electrode 160, and a portion (VA1) of the first external connection portion 181 are formed on the further formed second insulating layer 140. Also, a portion (VA2) of the second external connection portion 191 is further formed. The second insulating layer 140 may be formed through a deposition process. Chemical vapor deposition (CVD), atomic layer deposition (ALD), etc. may be used to form the second insulating layer 140.

[0064] The electrode connection portion 161, the second plate electrode 160, a portion (VA1) of the first external connection portion 181, and a portion (VA2) of the second external connection portion 191 may be formed through a deposition process after etching the second insulating layer 140. The etching process may be performed using a mask. The deposition process of the electrode connection portion 161, the second plate electrode 160, the first external connection portion 181, and the second external connection portion 191 may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), or the like. The second plate electrode 160 is formed so that one side is connected to the portion (VA1) of the first external connection portion 181. The portion (VA2) of the second external connection portion 191 is formed so as to be connected to the first plate electrode 150.

[0065] 7, a plate-shaped dielectric layer 170 is formed on the second plate-shaped electrode 160. The plate-shaped dielectric layer 170 may be formed through a deposition process. The deposition process of the plate-shaped dielectric layer 170 may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), etc. The plate-shaped dielectric layer 170 is not deposited on a portion of the second plate-shaped electrode 160. The portion of the second plate-shaped electrode 160 on which the plate-shaped dielectric layer 170 is not deposited may be located at an outer end connected to a portion (VA1) of the first external connection part 181.

[0066] 8, a first plate electrode 150 is formed on a plate-shaped dielectric layer 170. A portion (VA1) of a first external connection portion 181 may be further formed. The first plate electrode 150 and the portion (VA1) of the first external connection portion 181 may be formed through a deposition process. The deposition process of the first plate electrode 150 and the portion (VA1) of the first external connection portion 181 may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), etc. The first plate electrode 150 is formed so as to contact a portion (VA2) of the second external connection portion 181.

[0067] Referring to FIG. 9, a second insulating layer 140 is further formed. Then, a first external electrode 180 and a second external electrode 190 are formed on the second insulating layer 140. The second insulating layer 140 may be formed through a deposition process. Chemical vapor deposition (CVD), atomic layer deposition (ALD), etc. may be used to form the second insulating layer 140. Then, the first external electrode 180 is formed to connect to the first external connection part 181, and the second external electrode 190 is formed to connect to the second external connection part 191. Prior to the formation of the first external electrode 180 and the second external electrode 190, the second insulating layer 140 may be etched to expose the first external connection part 181 and the second external connection part 191. In addition, prior to the formation of the first external electrode 180 and the second external electrode 190, a part of the first external connection part 181 and a part of the second external connection part 191 may be further formed. The first external electrode 180 and the second external electrode 190 may be formed by a deposition process. The deposition of the first external electrode 180 and the second external electrode 190 may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), plating, or the like.

[0068] FIG. 10 is a diagram showing a capacitor according to another embodiment.

[0069] 10, a capacitor 20 according to another embodiment may include a substrate 200, a first capacitor unit (CA1), a second capacitor unit (CA2), a first external electrode 280, and a second external electrode 290. In the embodiment shown in FIG.

[0070] The substrate 200 has a predetermined area. The substrate 200 is made of an insulating material. In one example, the substrate 200 may be a silicon substrate.

[0071] The first capacitor unit (CA1) is located on the substrate 200. The first capacitor unit (CA1) may include a first insulating layer 210, a first electrode 231, a dielectric layer 232, and a second electrode 233.

[0072] The first electrode 231, the dielectric layer 232, and the second electrode 233 are located over the trench 220 formed in the first insulating layer 210. Also located within the first insulating layer 210 is the conductive layer 211.

[0073] The structure of the first capacitor section CA1 is the same as or similar to that of the first capacitor section CA1 of the capacitor 10 described above with reference to FIG. 1, and therefore will not be described again.

[0074] The second capacitor unit (CA2) is located on the first capacitor unit (CA1). The second capacitor unit (CA2) includes a second insulating layer 240, a first plate electrode 250, a second plate electrode 260 and a plate dielectric layer 270.

[0075] The second insulating layer 240 is located on the first capacitor portion (CA1). The second insulating layer 240 may cover the second electrode 233. The second insulating layer 240 may cover the first insulating layer 210 in an area other than the area where the second electrode 233 is located. The second insulating layer 240 may be made of silicon oxide (SiO 2 ) layer.

[0076] The first plate electrode 250 , the second plate electrode 260 , and the plate dielectric layer 270 are located inside the second insulating layer 240 .

[0077] The first plate electrode 250 may have a plate-like structure having a preset area. A plurality of the first plate electrodes 250 may be positioned at a distance in the vertical direction. Among the plurality of first plate electrodes 250, the first plate electrode 250 positioned closest to the substrate 200 may be positioned to face the second electrode 233 in the vertical direction and may be connected to the second electrode 233 via an interlayer connection portion 251. The interlayer connection portion 251 may be positioned between the first plate electrode 250 and the second electrode 233. That is, the interlayer connection portion 251 may be positioned to penetrate the second insulating layer 240 between the first plate electrode 250 and the second electrode 233, and both ends may be connected to the first plate electrode 250 and the second electrode 233, respectively. A plurality of the interlayer connection portions 251 may be positioned between the first plate electrode 250 and the second electrode 233. The interlayer connection portion 251 may be provided as a via structure.

[0078] The second plate electrode 260 is located inside the second insulating layer 240. The second plate electrode 260 may have a plate-shaped structure having a preset area. A plurality of second plate electrodes 260 may be positioned spaced apart in the vertical direction. The first plate electrode 250 and the second plate electrode 260 are stacked with a plate-shaped dielectric layer 270 therebetween. For example, the second plate electrode 260 may be stacked alternately with the first plate electrode 250 with the plate-shaped dielectric layer 270 therebetween. The plate-shaped dielectric layer 270 may be made of ZrO 2 -Al 2 O 3 -ZrO 2 The plate-shaped dielectric layer 270 can be made of a composite layer of ZAZ. 2 O 3 ZrO 2 , HfO 2 The plate-shaped dielectric layer 270 may be made of any one of metal oxides such as Al. 2 O 3 ZrO 2 , HfO 2 The plate-shaped dielectric layer 270 may be provided by the same material as the dielectric layer 232.

[0079] The first external electrode 280 is connected to the first electrode 231 and the second plate electrode 260. The first external electrode 280 is located on the second insulating layer 240, and at least a part of the area is exposed to the outside. The first external electrode 280 can be connected to the first electrode 231 and the second plate electrode 260 via the first external connection part 281. The first external connection part 281 is located between the first external electrode 280 and the conductive layer 211 so as to penetrate the first insulating layer 210 and the second insulating layer 240, and both ends can be connected to the conductive layer 211 and the first external electrode 280, respectively. One side of the second plate electrode 260 can be connected to the first external connection part 281 in direct contact with the second plate electrode 260. The second plate electrode 260 can be connected to the first external connection part 281 outside the area facing the first plate electrode 250 with the plate dielectric layer 270 therebetween. The first electrode 231 can be connected to the first external connection 281 through the conductive layer 211. The first external connection 281 can be provided in a via structure across the first insulating layer 210 and the second insulating layer 240.

[0080] The second external electrode 290 is connected to the second electrode 233 and the first plate electrode 250. The second external electrode 290 is located on the second insulating layer 240, and at least a portion of the electrode 290 is exposed to the outside. The second external electrode 290 may be connected to the first plate electrode 250 through the second external connection portion 291. The second external connection portion 291 may be located to penetrate a portion of the second insulating layer 240 and may be directly connected to the second external electrode 290 and each of the first plate electrodes 250. The first plate electrode 250 may be connected to the second external connection portion 291 outside the region where the second plate electrode 260 faces each other with the plate dielectric layer 270 therebetween. The second electrode 233 is connected to the second external electrode 290 through the first plate electrode 250. The second external connection portion 291 may be provided as a via structure.

[0081] The capacitor 20 according to another embodiment includes a first capacitor portion CA1 and a second capacitor portion CA2, so that the capacitor 20 has a high capacitance.

[0082] The second capacitor section (CA2) has a large capacitance, with a plurality of first plate electrodes 250 and a plurality of second plate electrodes 260 laminated in multiple layers.

[0083] FIG. 11 is a diagram showing a capacitor according to still another embodiment.

[0084] 11, a capacitor 30 according to another embodiment includes a first capacitor unit (CA1) and a second capacitor unit (CA2). The first capacitor unit (CA1) is the same as or similar to the first capacitor unit (CA1) included in the capacitor 10 of FIG 1, and therefore a repeated description will be omitted. Also, the second capacitor unit (CA2) is the same as or similar to the second capacitor unit (CA2) included in the capacitor 10 of FIG 1 or the second capacitor unit (CA2) included in the capacitor 20 of FIG 10, and therefore a repeated description will be omitted.

[0085] The differences from capacitor 10 in FIG. 1 or capacitor 20 in FIG. 10 will be described below.

[0086] In addition, the capacitor 30 according to another embodiment may include a plurality of first external electrodes 380 and a plurality of second external electrodes 390 .

[0087] A plurality of first capacitor units (CA1) may be located on the substrate in different regions. The conductive layer 311 may be formed to connect to all of the first electrodes 111, 211 included in the plurality of first capacitor units (CA1). A plurality of first external connection units 381 are connected to the conductive layer 311 in different regions. A first external electrode 380 is connected to each of the plurality of first external connection units 381. At this time, at least one or more first external connection units 381 and first external electrodes 380 may be connected to one first capacitor unit (CA1). Each of the plurality of first external connection units 381 is connected to the second plate electrodes 160, 260 of the second capacitor unit (CA2) located adjacent thereto. The plurality of first external electrodes 380 are connected via the conductive layer 311.

[0088] At least one second capacitor unit (CA2) may be located on each first capacitor unit (CA1). Each second capacitor unit (CA2) may be connected to at least one second external connection unit 391. Each second external connection unit 391 is connected to a second external electrode 390. Thus, the different second capacitor units (CA2) have a parallel structure.

[0089] Furthermore, the capacitor 30 according to another embodiment has a plurality of first external electrodes 380 and a plurality of second external electrodes 390. This allows various adjustments of the connection with the external circuit.

[0090] Although the preferred embodiment of the present invention has been described above, the present invention is not limited thereto, and various modifications can be made within the scope of the claims, the description of the invention, and the accompanying drawings, which of course also fall within the scope of the present invention. [Explanation of symbols]

[0091] 100 Substrates 110 First insulating layer 111 Conductive layer 120 Trench 131 1st electrode 132 Dielectric Layer 133 2nd electrode 140 Second insulating layer 150 First plate electrode 160 Second plate electrode 170 Plate-shaped dielectric layer 180 1st external electrode 190 2nd external electrode

Claims

1. substrate; a first capacitor portion located on the substrate; and a second capacitor portion located on the first capacitor portion; The first capacitor section is a first insulating layer having a plurality of trenches; a first electrode located on the first insulating layer; a dielectric layer overlying the first electrode; and A capacitor comprising a second electrode overlying the dielectric layer.

2. The second capacitor section is a second insulating layer located on the first capacitor portion; a first plate electrode located inside the second insulating layer and having a plate-like structure; a second plate electrode located inside the second insulating layer and having a plate-like structure; and The capacitor of claim 1 including a plate-shaped dielectric layer located between the first plate electrode and the second plate electrode.

3. The capacitor according to claim 2 , further comprising an interlayer connection portion connecting the first plate electrode and the second electrode.

4. The first plate-shaped electrodes are provided in two numbers and are spaced apart from each other, The capacitor according to claim 3 , wherein the interlayer connection portion is located between the second electrode and one of the two first plate electrodes that is located adjacent to the substrate.

5. The capacitor according to claim 3 , wherein the second plate electrode is located between two of the first plate electrodes.

6. The capacitor according to claim 5 , wherein two second plate electrodes are provided and positioned spaced apart from each other.

7. The capacitor according to claim 6 , wherein the two second plate electrodes are connected by an electrode connection portion.

8. The capacitor according to claim 2 , wherein the first plate electrode and the second plate electrode are provided in a plurality of electrodes and are laminated with the plate-shaped dielectric layer therebetween.

9. a first external electrode located on the second insulating layer and connected to the first electrode and the second plate electrode; and The capacitor of claim 2 , further comprising a second external electrode located on the second insulating layer and connecting to the second electrode and the first plate electrode.

10. a first external connection portion that connects the first external electrode and the second plate-like electrode; and The capacitor according to claim 9 , further comprising a second external connection portion connecting the second external electrode and the first plate electrode.

11. The capacitor of claim 10 further comprising a conductive layer located within the first insulating layer and connecting to the first electrode.

12. The capacitor of claim 11 , wherein the first external connection is connected to the conductive layer.

13. The first capacitor unit is located in a plurality of regions on the substrate, The capacitor of claim 1 , wherein at least one of the second capacitor units is located on each of the first capacitor units.

14. The capacitor of claim 13 , further comprising a conductive layer located within the first insulating layer and connected to all of the first electrodes included in the plurality of first capacitor portions.

15. a plurality of first external electrodes located on the second capacitor portion; a plurality of second external electrodes located on the second capacitor portion; and The capacitor according to claim 14 , further comprising a plurality of first external connection parts connected in direct contact with the conductive layer and each of the first external electrodes.

16. The capacitor of claim 15 , wherein each of the second capacitor units is connected to at least one of the second external electrodes.

17. forming a first insulating layer on a substrate; forming a trench in the first insulating layer; forming a first electrode, a dielectric layer, and a second electrode in the trench to form a first capacitor portion; and A method for manufacturing a capacitor, comprising forming a second capacitor section on the first capacitor section, the second capacitor section having a first plate electrode and a second plate electrode inside a second insulating layer.

18. The method of claim 17 , wherein the first plate electrode and the second plate electrode are formed through a deposition process.

Images